Professional Education

  • PhD, École Polytechnique Fédérale de Lausanne (EPFL), Materials Science and Engineering (2024)
  • MSc, Bilkent University, National Nanotechnology Research Center, Materials Science (2018)
  • BSc, Middle East Technical University, Metallurgical and Materials Engineering (2016)

Stanford Advisors

Contact

  • Academic
    ddede@stanford.edu
    University - Scholar Department: Materials Science and Engineering Position: Postdoctoral Scholar

Additional Info

All Publications

  • Selective-Area Deposition of Indium and Its Plasmonic Properties ACS APPLIED OPTICAL MATERIALS Dede, D., Akerboom, E., Brondolin, R., Veeken, T., Hagger, T., Lemerle, R., Alarcon Llado, E., Piazza, V., Carter, W., Polman, A., Fontcuberta I Morral, A. 2025

    View details for DOI 10.1021/acsaom.5c00373

    View details for Web of Science ID 001635397500001

  • Multi-<i>V<sub>T</sub></i> in Oxide--Semiconductor Transistors Leveraging Sub-1-nm Dipoles for Low-Refresh Energy Gain Cell Memory IEEE TRANSACTIONS ON ELECTRON DEVICES Athena, F., Kang, J., Passlack, M., Safron, N., Dede, D., Jana, K., Saini, B., Wang, X., Liu, S., Hartanto, J., Boneh, E., Chen, H., Huang, C., Lin, Q., Zhong, D., Leitherer, K., Mcintyre, P. C., Pitner, G., Radu, I. P., Wong, H. 2025

    View details for DOI 10.1109/TED.2025.3616087

    View details for Web of Science ID 001600834500001

  • Single Photon Emitters in Thin GaAsN Nanowire Tubes Grown on Si ACS NANO Denis, N., Sharma, A., Dede, D., Nurmamytov, T., Cianci, S., Santangeli, F., Felici, M., Boureau, V., Polimeni, A., Rubini, S., Morral, A., De Luca, M. 2025

    Abstract

    III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The peculiar geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent optical properties. Local N% fluctuations and radial confinement give rise to quantum dot-like states in the thin GaAsN shell, which display remarkable single photon emission with a second-order autocorrelation function at zero time delay as low as 0.05 in continuous and in pulsed excitation.

    View details for DOI 10.1021/acsnano.5c12139

    View details for Web of Science ID 001599142300001

    View details for PubMedID 41128262

https://orcid.org/0000-0002-9158-8764