
Hubert Sylwester Stokowski
Ph.D. Student in Applied Physics, admitted Autumn 2018
All Publications
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High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate
OPTICS EXPRESS
2022; 30 (13): 23177-23186
View details for DOI 10.1364/OE.460119
View details for Web of Science ID 000813479600073
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High-efficiency second harmonic generation of blue light on thin-film lithium niobate.
Optics letters
2022; 47 (11): 2706-2709
Abstract
The strength of interactions between photons in a chi(2) nonlinear optical waveguide increases at shorter wavelengths. These larger interactions enable coherent spectral translation and light generation at a lower power, over a broader bandwidth, and in a smaller device: all of which open the door to new technologies spanning fields from classical to quantum optics. Stronger interactions may also grant access to new regimes of quantum optics to be explored at the few-photon level. One promising platform that could enable these advances is thin-film lithium niobate (TFLN), due to its broad optical transparency window and possibility for quasi-phase matching and dispersion engineering. In this Letter, we demonstrate second harmonic generation of blue light on an integrated thin-film lithium niobate waveguide and observe a conversion efficiency of eta0=33, 000%/W-cm2, significantly exceeding previous demonstrations.
View details for DOI 10.1364/OL.455046
View details for PubMedID 35648910
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Mid-infrared nonlinear optics in thin-film lithium niobate on sapphire
OPTICA
2021; 8 (6): 921-924
View details for DOI 10.1364/OPTICA.427428
View details for Web of Science ID 000663363600024
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Determination of Fermi Level Position at the Graphene/GaN Interface Using Electromodulation Spectroscopy
ADVANCED MATERIALS INTERFACES
2020
View details for DOI 10.1002/admi.202001220
View details for Web of Science ID 000572992700001
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Development of a Millimeter-Wave Transducer for Quantum Networks
IEEE. 2020
View details for DOI 10.1109/IRMMW-THZ46771.2020.9370661
View details for Web of Science ID 000662887600252
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Depletion Layer Built-In Field at (1-100), (0001), and (000-1) GaN/Water Junction and Its Role in Semiconductor Nanowire Water Splitting
ADVANCED MATERIALS INTERFACES
2019; 6 (4)
View details for DOI 10.1002/admi.201801497
View details for Web of Science ID 000459485500021
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Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy
JOURNAL OF APPLIED PHYSICS
2016; 119 (18)
View details for DOI 10.1063/1.4949514
View details for Web of Science ID 000377717500052
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Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1-xBix dilute bismide alloys
JOURNAL OF PHYSICS D-APPLIED PHYSICS
2016; 49 (11)
View details for DOI 10.1088/0022-3727/49/11/115107
View details for Web of Science ID 000371007100010