Contact

  • Academic
    jlewis11@stanford.edu
    University - Student Department: Chemical Engineering Position: Graduate

Additional Info

  • Mail Code: 4300

All Publications

  • Deposition and Degradation Mechanism of Zinc Thiolate Thin Films via Hybrid Molecular Layer Deposition CHEMISTRY OF MATERIALS Lewis, J., Shi, J., Werbrouck, A., Bent, S. F. 2025

    View details for DOI 10.1021/acs.chemmater.4c02571

    View details for Web of Science ID 001416486400001

  • Comparison of Al- and Hf-based hybrid photoresists grown by molecular layer deposition for extreme ultraviolet lithography JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Ravi, A., Than, L., Lewis, J., Shi, J., Werbrouck, A., Han, J., Mattinen, M., Bent, S. F. 2024; 42 (6)

    View details for DOI 10.1116/6.0003975

    View details for Web of Science ID 001351079400001

  • Molecular layer deposition of an Al-based hybrid resist for electron-beam and EUV lithography Ravi, A., Shi, J., Lewis, J., Bent, S. F., Guerrero, D., Amblard, G. R. SPIE-INT SOC OPTICAL ENGINEERING. 2023

    View details for DOI 10.1117/12.2657636

    View details for Web of Science ID 001022961000031

  • The Importance of Decarbonylation Mechanisms in the Atomic Layer Deposition of High-Quality Ru Films by Zero-Oxidation State Ru(DMBD)(CO)3. Small (Weinheim an der Bergstrasse, Germany) Schneider, J. R., de Paula, C., Lewis, J., Woodruff, J., Raiford, J. A., Bent, S. F. 1800: e2105513

    Abstract

    Achieving facile nucleation of noble metal films through atomic layer deposition (ALD) is extremely challenging. To this end, eta4 -2,3-dimethylbutadiene ruthenium(0) tricarbonyl (Ru(DMBD)(CO)3 ), a zero-valent complex, has recently been reported to achieve good nucleation by ALD at relatively low temperatures and mild reaction conditions. The authors study the growth mechanism of this precursor by in situ quartz-crystal microbalance and quadrupole mass spectrometry during Ru ALD, complemented by ex situ film characterization and kinetic modeling. These studies reveal that Ru(DMBD)(CO)3 produces high-quality Ru films with excellent nucleation properties. This results in smooth, coalesced films even at low film thicknesses, all important traits for device applications. However, Ru deposition follows a kinetically limited decarbonylation reaction scheme, akin to typical chemical vapor deposition processes, with a strong dependence on both temperature and reaction timescale. The non-self-limiting nature of the kinetically driven mechanism presents both challenges for ALD implementation and opportunities for process tuning. By surveying reports of similar precursors, it is suggested that the findings can be generalized to the broader class of zero-oxidation state carbonyl-based precursors used in thermal ALD, with insight into the design of effective saturation studies.

    View details for DOI 10.1002/smll.202105513

    View details for PubMedID 34989132