Bio


Harris utilizes molecular beam epitaxy (MBE) of III-V compound semiconductor materials to investigate new materials for electronic and optoelectronic devices. He utilizes heterojunctions, superlattices, quantum wells, and three-dimensional self-assembled quantum dots to create metastable engineered materials with novel or improved properties for electronic and optoelectronic devices. He has recently focused on three areas: 1) integration of photonic devices and micro optics for creation of new minimally invasive bio and medical systems for micro-array and neural imaging and 2) application of nanostructures semiconductors for the acceleration of electrons using light, a dielectric Laser Accelerator (DLA), and 3) novel materials and nano structuring for high efficiency solar cells and photo electrochemical water splitting for the generation of hydrogen.

Honors & Awards


  • Fellow, IEEE (1988)
  • Fellow, American Physical Society (1992)
  • Fellow, Optical Society of America (2005)
  • Fellow, Materials Research Society (2009)
  • Morris Liebmann Award, IEEE (2000)
  • Welker Medal, International Symposium on Compound Semiconductors (2000)
  • Alexander Humboldt Senior Research Prize, Alexander Humboldt (1999)
  • MBE Innovator Award, International MBE Conference (2008)
  • Elected Member, National Academy of Engineering (2011)
  • Aristotle Award, Semiconductor Research Corporation (2013)
  • Al Cho MBE Award, International MBE Conference (2014)

Program Affiliations


  • Stanford SystemX Alliance

Professional Education


  • PhD, Stanford University, Electrical Engineering (1969)
  • MS, Stanford University, Electrical Engineering (1965)
  • BS, Stanford University, Electrical Engineering (1964)

Stanford Advisees


  • Doctoral Dissertation Reader (AC)
    Payton Broaddus, Andrew Ceballos, Tiffany Huang, Hongquan Li, Zheng Lyu, Yu Miao, Li Tao, Stephen Wolf
  • Doctoral (Program)
    Joe Katz, Hongquan Li

All Publications


  • Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes ACS PHOTONICS Jiang, J., Xue, M., Lu, C., Fenrich, C. S., Morea, M., Zang, K., Gao, J., Cheng, M., Zhang, Y., Kamins, T. I., Harris, J. S., Sun, J. 2019; 6 (4): 915–23
  • Silicon nitride waveguide as a power delivery component for on-chip dielectric laser accelerators OPTICS LETTERS Tan, S., Zhao, Z., Urbanek, K., Hughes, T., Lee, Y., Fan, S., Harris, J. S., Byer, R. L. 2019; 44 (2): 335–38

    Abstract

    We study the weakly guided silicon nitride waveguide as an on-chip power delivery solution for dielectric laser accelerators (DLAs). We focus on the two main limiting factors on the waveguide network for DLAs: the optical damage and nonlinear characteristics. The typical delivered fluence at the onset of optical damage is measured to be ∼0.19  J/cm2 at a 2 μm central wavelength and 250 fs pulse width. This damage fluence is lower than that of the bulk Si3N4 (∼0.65  J/cm2), but higher than that of bulk silicon (∼0.17  J/cm2). We also report the nonlinearity-induced spectrum and phase variance of the output pulse at this pulse duration. We find that a total waveguide length within 3 mm is sufficient to avoid significant self-phase modulation effects when operating slightly below the damage threshold. We also estimate that one SiNx waveguide can power 70 μm silicon dual pillar DLAs from a single side, based on the results from the recent free-space DLA experiment.

    View details for DOI 10.1364/OL.44.000335

    View details for Web of Science ID 000455620100039

    View details for PubMedID 30644894

  • Integrated photonics for NASA applications Krainak, M., Stephen, M., Troupaki, E., Tedder, S., Reyna, B., Klamkin, J., Zhao, H., Song, B., Fridlander, J., Minh Tran, Bowers, J. E., Bergman, K., Lipson, M., Rizzo, A., Datta, I., Abrams, N., Mookherjea, S., Ho, S., Bei, Q., Huang, Y., Tu, Y., Moslehi, B., Harris, J., Matsko, A., Savchenkov, A., Liu, G., Proietti, R., Yoo, S. B., Johansson, L., Dorrer, C., Arteaga-Sierra, F. R., Qiao, J., Gong, S., Gu, T., Ohanian, O., Ni, X., Ding, Y., Duan, Y., Dalir, H., Chen, R. T., Sorger, V. J., Komljenovic, T., Glebov, A. L., Leisher, P. O. SPIE-INT SOC OPTICAL ENGINEERING. 2019

    View details for DOI 10.1117/12.2509808

    View details for Web of Science ID 000468808800009

  • Improving characterization capabilities in new single-photon avalanche diode research. The Review of scientific instruments Ding, X., Zang, K., Zheng, T., Fei, Y., Huang, M., Liu, X., Wang, Y., Jin, G., Huo, Y., Harris, J. S., Jiang, X. 2019; 90 (4): 043108

    Abstract

    Many novel and promising single-photon avalanche diodes (SPADs) emerged in recent years. However, some of them may demonstrate a very high dark count rate, even tens of megahertz, especially during the development phase or at room temperature, posing new challenges to device characterization. Gating operation with a width of 10 ns can be used to suppress the dark counts not coincident with the photon arriving time. However, as a side effect of the fast-gating operation, the gating response could be much higher than the avalanche signal and is usually removed by various circuit-based cancellation techniques. Here, we present an alternative method. A high-speed digital storage oscilloscope (DSO) is used to extract the weak avalanche signals from the large gating response background by waveform subtraction in software. Consequently, no complex circuit and precise tuning for each SPAD are needed. The avalanche detection threshold can be reduced to 5% of the full vertical scale of the DSO or 5 mV, whichever is greater. The timing resolution can be better than 2 ps for typical avalanche signals. Optical alignment and calibration are easy. The feasibility of on-wafer test with an RF probe station is discussed. All the advantages and features listed above make this method very useful in new SPAD research.

    View details for PubMedID 31043052

  • Electrically Tunable, CMOS-Compatible Metamaterial Based on Semiconductor Nanopillars ACS PHOTONICS Morea, M., Zang, K., Kamins, T. I., Brongersma, M. L., Harris, J. S. 2018; 5 (11): 4702–9
  • Epsilon-Near-Zero Si Slot-Waveguide Modulator ACS PHOTONICS Liu, X., Zang, K., Kang, J., Park, J., Harris, J. S., Kik, P. G., Brongersma, M. L. 2018; 5 (11): 4484–90
  • Design of a tapered slot waveguide dielectric laser accelerator for sub-relativistic electrons OPTICS EXPRESS Zhao, Z., Hughes, T. W., Tan, S., Deng, H., Sapra, N., England, R., Vuckovic, J., Harris, J. S., Byer, R. L., Fan, S. 2018; 26 (18): 22801–15

    Abstract

    We propose a dielectric laser accelerator design based on a tapered slot waveguide structure for sub-relativistic electron acceleration. This tapering scheme allows for straightforward tuning of the phase velocity of the accelerating field along the propagation direction, which is necessary for maintaining synchronization with electrons as their velocities increase. Furthermore, the non-resonant nature of this design allows for better tolerance to experimental errors. We also introduce a method to design this continuously tapered structure based on the eikonal approximation, and give a working example based on realistic experimental parameters.

    View details for DOI 10.1364/OE.26.022801

    View details for Web of Science ID 000443431400037

    View details for PubMedID 30184935

  • Elements of a dielectric laser accelerator OPTICA McNeur, J., Kozak, M., Schoenenberger, N., Leedle, K. J., Deng, H., Ceballos, A., Hoogland, H., Ruehl, A., Hartl, I., Holzwarth, R., Solgaard, O., Harris, J. S., Byer, R. L., Hommelhoff, P. 2018; 5 (6): 687–90
  • Pile-up correction in characterizing single-photon avalanche diodes of high dark count rate OPTICAL AND QUANTUM ELECTRONICS Ding, X., Zang, K., Fei, Y., Zheng, T., Su, T., Morea, M., Jin, G., Harris, J. S., Jiang, X., Zhang, Q. 2018; 50 (6)
  • On-Chip Laser-Power Delivery System for Dielectric Laser Accelerators PHYSICAL REVIEW APPLIED Hughes, T. W., Tan, S., Zhao, Z., Sapra, N. V., Leedle, K. J., Deng, H., Miao, Y., Black, D. S., Solgaard, O., Harris, J. S., Vuckovic, J., Byer, R. L., Fan, S., England, R., Lee, Y., Qi, M. 2018; 9 (5)
  • Phase-dependent laser acceleration of electrons with symmetrically driven silicon dual pillar gratings OPTICS LETTERS Leedle, K. J., Black, D. S., Miao, Y., Urbanek, K. E., Ceballos, A., Deng, H., Harris, J. S., Solgaard, O., Byer, R. L. 2018; 43 (9): 2181–84

    Abstract

    We present the demonstration of phase-dependent laser acceleration and deflection of electrons using a symmetrically driven silicon dual pillar grating structure. We show that exciting an evanescent inverse Smith-Purcell mode on each side of a dual pillar grating can produce hyperbolic cosine acceleration and hyperbolic sine deflection modes, depending on the relative excitation phase of each side. Our devices accelerate sub-relativistic 99.0 keV kinetic energy electrons by 3.0 keV over a 15 μm distance with accelerating gradients of 200 MeV/m with 40 nJ, 300 fs, 1940 nm pulses from an optical parametric amplifier. These results represent a significant step towards making practical dielectric laser accelerators for ultrafast, medical, and high-energy applications.

    View details for DOI 10.1364/OL.43.002181

    View details for Web of Science ID 000431179400061

    View details for PubMedID 29714784

  • Carrier-selective interlayer materials for silicon solar cell contacts JOURNAL OF APPLIED PHYSICS Xue, M., Islam, R., Chen, Y., Chen, J., Lu, C., Pleus, A., Tae, C., Xu, K., Liu, Y., Kamins, T. I., Saraswat, K. C., Harris, J. S. 2018; 123 (14)

    View details for DOI 10.1063/1.5020056

    View details for Web of Science ID 000430014600001

  • y Spatiotemporal characteristics of retinal response to network-mediated photovoltaic stimulation JOURNAL OF NEUROPHYSIOLOGY Ho, E., Smith, R., Goetz, G., Lei, X., Galambos, L., Kamins, T. I., Harris, J., Mathieson, K., Palanker, D., Sher, A. 2018; 119 (2): 389–400

    Abstract

    Subretinal prostheses aim at restoring sight to patients blinded by photoreceptor degeneration using electrical activation of the surviving inner retinal neurons. Today, such implants deliver visual information with low-frequency stimulation, resulting in discontinuous visual percepts. We measured retinal responses to complex visual stimuli delivered at video rate via a photovoltaic subretinal implant and by visible light. Using a multielectrode array to record from retinal ganglion cells (RGCs) in the healthy and degenerated rat retina ex vivo, we estimated their spatiotemporal properties from the spike-triggered average responses to photovoltaic binary white noise stimulus with 70-μm pixel size at 20-Hz frame rate. The average photovoltaic receptive field size was 194 ± 3 μm (mean ± SE), similar to that of visual responses (221 ± 4 μm), but response latency was significantly shorter with photovoltaic stimulation. Both visual and photovoltaic receptive fields had an opposing center-surround structure. In the healthy retina, ON RGCs had photovoltaic OFF responses, and vice versa. This reversal is consistent with depolarization of photoreceptors by electrical pulses, as opposed to their hyperpolarization under increasing light, although alternative mechanisms cannot be excluded. In degenerate retina, both ON and OFF photovoltaic responses were observed, but in the absence of visual responses, it is not clear what functional RGC types they correspond to. Degenerate retina maintained the antagonistic center-surround organization of receptive fields. These fast and spatially localized network-mediated ON and OFF responses to subretinal stimulation via photovoltaic pixels with local return electrodes raise confidence in the possibility of providing more functional prosthetic vision. NEW & NOTEWORTHY Retinal prostheses currently in clinical use have struggled to deliver visual information at naturalistic frequencies, resulting in discontinuous percepts. We demonstrate modulation of the retinal ganglion cells (RGC) activity using complex spatiotemporal stimuli delivered via subretinal photovoltaic implant at 20 Hz in healthy and in degenerate retina. RGCs exhibit fast and localized ON and OFF network-mediated responses, with antagonistic center-surround organization of their receptive fields.

    View details for PubMedID 29046428

    View details for PubMedCentralID PMC5867391

  • NASA Integrated Photonics Krainak, M., Stephen, M., Klamkin, J., Bergman, K., Lipson, M., Mookherjea, S., Lesiher, P., Ho, S., Moslehi, B., Harris, J., Matsko, A., Savchenkov, A., Yoo, S. B., Lucente, M., Nehmetallah, G., Johansson, L., Winzer, P., Tsang, H. K., Capmany, J., Yao, J., Fontaine, N., Dutta, N. IEEE. 2018
  • Investigation of Nickel Oxide as Carrier-selective Interlayer for Silicon Solar Cell Contacts Xue, M., Islam, R., Chen, Y., Lu, C., Lyu, Z., Zang, K., Jia, J., Deng, H., Kamins, T., Saraswat, K., Harris, J., IEEE IEEE. 2018: 2180–82
  • Comprehensive modeling on luminescent coupling dependency in multi-junction solar cells Sun, Z., Lyu, Z., Jia, J., Xue, M., Chen, K., Fang, S., Harris, J. S., Witzigmann, B., Osinski, M., Arakawa, Y. SPIE-INT SOC OPTICAL ENGINEERING. 2018

    View details for DOI 10.1117/12.2288573

    View details for Web of Science ID 000432479700019

  • Electrical and optical 3D modelling of light-trapping single-photon avalanche diode Zheng, T., Zang, K., Morea, M., Xue, M., Lu, C., Jiang, X., Zhang, Q., Kamins, T. I., Harris, J. S., Witzigmann, B., Osinski, M., Arakawa, Y. SPIE-INT SOC OPTICAL ENGINEERING. 2018

    View details for DOI 10.1117/12.2287312

    View details for Web of Science ID 000432479700017

  • Contact Selectivity Engineering in a 2 mum Thick Ultrathin c-Si Solar Cell Using Transition-Metal Oxides Achieving an Efficiency of 10.8. ACS applied materials & interfaces Xue, M., Islam, R., Meng, A. C., Lyu, Z., Lu, C., Tae, C., Braun, M. R., Zang, K., McIntyre, P. C., Kamins, T. I., Saraswat, K. C., Harris, J. S. 2017

    Abstract

    In this paper, the integration of metal oxides as carrier-selective contacts for ultrathin crystalline silicon (c-Si) solar cells is demonstrated which results in an 13% relative improvement in efficiency. The improvement in efficiency originates from the suppression of the contact recombination current due to the band offset asymmetry of these oxides with Si. First, an ultrathin c-Si solar cell having a total thickness of 2 mum is shown to have >10% efficiency without any light-trapping scheme. This is achieved by the integration of nickel oxide (NiOx) as a hole-selective contact interlayer material, which has a low valence band offset and high conduction band offset with Si. Second, we show a champion cell efficiency of 10.8% with the additional integration of titanium oxide (TiOx), a well-known material for an electron-selective contact interlayer. Key parameters including Voc and Jsc also show different degrees of enhancement if single (NiOx only) or double (both NiOx and TiOx) carrier-selective contacts are integrated. The fabrication process for TiOx and NiOx layer integration is scalable and shows good compatibility with the device.

    View details for PubMedID 29124928

  • First-principle Study for More Accurate Optical and Electrical Characterization of Ge1-xSnx Alloy for Si and Group-IV Device Applications JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, Y., Cho, S., Park, B., Harris, J. S. 2017; 17 (5): 675–84
  • Silicon single-photon avalanche diodes with nano-structured light trapping NATURE COMMUNICATIONS Zang, K., Jiang, X., Huo, Y., Ding, X., Morea, M., Chen, X., Lu, C., Ma, J., Zhou, M., Xia, Z., Yu, Z., Kamins, T. I., Zhang, Q., Harris, J. S. 2017; 8: 628

    Abstract

    Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5-fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range.The performance of silicon single-photon avalanche detectors is currently limited by the trade-off between photon detection efficiency and timing jitter. Here, the authors demonstrate how a CMOS-compatible, nanostructured, thin junction structure can make use of tailored light trapping to break this trade-off.

    View details for PubMedID 28931815

  • Influence of Ballastic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes Superlattices and Microstructures Harris, J., S., Rascol, J., J. L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. ; 2 (7): 147-150
  • How Adding Electrons Scrambles the Electronic Spectrum of a Quantum Dot Harris, J., S., Patel, S., R., Stewart, D., R., Marcus, C., M., Gökcedag, M., Alhassid, Y.
  • A Solar Power System with Gallium Arsenide Solar Cells J. Energy Madewell, J., F., Nussberger, A., A., Harris, J., S.
  • Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors APPLIED PHYSICS LETTERS Morea, M., Brendel, C. E., Zang, K., Suh, J., Fenrich, C. S., Huang, Y., Chung, H., Huo, Y., Kamins, T. I., Saraswat, K. C., Harris, J. S. 2017; 110 (9)

    View details for DOI 10.1063/1.4977878

    View details for Web of Science ID 000397871600009

  • Multifunctional, inexpensive, and reusable nanoparticle-printed biochip for cell manipulation and diagnosis. Proceedings of the National Academy of Sciences of the United States of America Esfandyarpour, R., DiDonato, M. J., Yang, Y., Durmus, N. G., Harris, J. S., Davis, R. W. 2017; 114 (8): E1306-E1315

    Abstract

    Isolation and characterization of rare cells and molecules from a heterogeneous population is of critical importance in diagnosis of common lethal diseases such as malaria, tuberculosis, HIV, and cancer. For the developing world, point-of-care (POC) diagnostics design must account for limited funds, modest public health infrastructure, and low power availability. To address these challenges, here we integrate microfluidics, electronics, and inkjet printing to build an ultra-low-cost, rapid, and miniaturized lab-on-a-chip (LOC) platform. This platform can perform label-free and rapid single-cell capture, efficient cellular manipulation, rare-cell isolation, selective analytical separation of biological species, sorting, concentration, positioning, enumeration, and characterization. The miniaturized format allows for small sample and reagent volumes. By keeping the electronics separate from microfluidic chips, the former can be reused and device lifetime is extended. Perhaps most notably, the device manufacturing is significantly less expensive, time-consuming, and complex than traditional LOC platforms, requiring only an inkjet printer rather than skilled personnel and clean-room facilities. Production only takes 20 min (vs. up to weeks) and $0.01-an unprecedented cost in clinical diagnostics. The platform works based on intrinsic physical characteristics of biomolecules (e.g., size and polarizability). We demonstrate biomedical applications and verify cell viability in our platform, whose multiplexing and integration of numerous steps and external analyses enhance its application in the clinic, including by nonspecialists. Through its massive cost reduction and usability we anticipate that our platform will enable greater access to diagnostic facilities in developed countries as well as POC diagnostics in resource-poor and developing countries.

    View details for DOI 10.1073/pnas.1621318114

    View details for PubMedID 28167769

  • Sub-optical-cycle control of free electrons by optical near-fields Kozak, M., McNeur, J., Leedle, K. J., Deng, H., Schoenenberger, N., Ruehl, A., Hartl, I., Harris, J. S., Byer, R. L., Hommelhoff, P., IEEE IEEE. 2017
  • Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells INTERNATIONAL JOURNAL OF PHOTOENERGY Chen, Y., Kang, Y., Jia, J., Huo, Y., Xue, M., Lyu, Z., Liang, D., Zhao, L., Harris, J. S. 2017
  • Ge/SiGe Quantum-well Micro-bridges with High Tensile Strain Xue, M., Chen, X., Chen, J., Kao, M., Shang, C., Zang, K., Huo, Y., Lu, C., Chen, Y., Deng, H., Kamins, T. I., Harris, J. S., IEEE IEEE. 2017
  • Surface textured silicon single-photon avalanche diode Zang, K., Ding, X., Jiang, X., Huo, Y., Morea, M., Chen, X., Lu, C., Xue, M., Chen, Y., Shang, C., Kamins, T. I., Zhang, Q., Pan, J., Harris, J. S., IEEE IEEE. 2017
  • Simulations of Taper Designs for Integrated Ge/SiGe Waveguide System Lu, C., Zang, K., Huo, Y., Chen, X., Fei, E. T., Xue, M., Kaminsl, T. I., Harris, J. S., IEEE IEEE. 2017
  • Tensile-strained Ge/SiGe multiple quantum well microdisks Photonics Research Chen, X., Fenrich, C. S., Xue, M., Kao, M., Zang, K., Lu, C., Fei, E. T., Chen, Y., Huo, Y., Kamins, T. I., Harris, J. S. 2017; 5 (6): B7-B14

    View details for DOI 10.1364/PRJ.5.0000B7

  • Core-Shell Germanium/Germanium Tin Nanowires Exhibiting Room Temperature Direct- and Indirect-Gap Photoluminescence NANO LETTERS Meng, A. C., Fenrich, C. S., Braun, M. R., McVittie, J. P., Marshall, A. F., Harris, J. S., McIntyre, P. C. 2016; 16 (12): 7521-7529

    Abstract

    Germanium-tin alloy nanowires hold promise as silicon-compatible optoelectronic elements with the potential to achieve a direct band gap transition required for efficient light emission. In contrast to Ge1-xSnx epitaxial thin films, free-standing nanowires deposited on misfitting germanium or silicon substrates can avoid compressive, elastic strains that inhibit formation of a direct gap. We demonstrate strong room temperature photoluminescence, consistent with band edge emission from both Ge core nanowires, elastically strained in tension, and the almost unstrained Ge1-xSnx shells grown around them. Low-temperature chemical vapor deposition of these core-shell structures was achieved using standard precursors, resulting in Sn incorporation that significantly exceeds the bulk solubility limit in germanium.

    View details for DOI 10.1021/acs.nanolett.6b03316

    View details for PubMedID 27802056

  • Strained Pseudomorphic Ge1-xSnx Multiple Quantum Well Microdisk Using SiNy Stressor Layer ACS PHOTONICS Fenrich, C. S., Chen, X., Chen, R., Huang, Y., Chung, H., Kao, M., Huo, Y., Kamins, T. I., Harris, J. S. 2016; 3 (12): 2231-2236
  • Solar water splitting by photovoltaic-electrolysis with a solar-to-hydrogen efficiency over 30. Nature communications Jia, J., Seitz, L. C., Benck, J. D., Huo, Y., Chen, Y., Ng, J. W., Bilir, T., Harris, J. S., Jaramillo, T. F. 2016; 7: 13237-?

    Abstract

    Hydrogen production via electrochemical water splitting is a promising approach for storing solar energy. For this technology to be economically competitive, it is critical to develop water splitting systems with high solar-to-hydrogen (STH) efficiencies. Here we report a photovoltaic-electrolysis system with the highest STH efficiency for any water splitting technology to date, to the best of our knowledge. Our system consists of two polymer electrolyte membrane electrolysers in series with one InGaP/GaAs/GaInNAsSb triple-junction solar cell, which produces a large-enough voltage to drive both electrolysers with no additional energy input. The solar concentration is adjusted such that the maximum power point of the photovoltaic is well matched to the operating capacity of the electrolysers to optimize the system efficiency. The system achieves a 48-h average STH efficiency of 30%. These results demonstrate the potential of photovoltaic-electrolysis systems for cost-effective solar energy storage.

    View details for DOI 10.1038/ncomms13237

    View details for PubMedID 27796309

    View details for PubMedCentralID PMC5095559

  • SiC protective coating for photovoltaic retinal prosthesis. Journal of neural engineering Lei, X., Kane, S., Cogan, S., Lorach, H., Galambos, L., Huie, P., Mathieson, K., Kamins, T., Harris, J., Palanker, D. 2016; 13 (4): 046016-?

    Abstract

    To evaluate plasma-enhanced, chemically vapor deposited (PECVD) amorphous silicon carbide (α-SiC:H) as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo.Retinal prostheses were implanted in rats sub-retinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiN x and thermal SiO2 were measured in accelerated soaking tests in saline at 87 °C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects.At 87 °C SiN x dissolved at 18.3 ± 0.3 nm d(-1), while SiO2 grown at high temperature (1000 °C) dissolved at 0.104 ± 0.008 nm d(-1). SiC films demonstrated the best stability, with no quantifiable change after 112 d. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces.SiC coatings demonstrating no erosion in accelerated aging test for 112 d at 87 °C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4 month follow-up in vivo. The optimal thickness of SiC layers is about 560 nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects.

    View details for DOI 10.1088/1741-2560/13/4/046016

    View details for PubMedID 27323882

    View details for PubMedCentralID PMC4967360

  • Analysis of luminescent coupling effects in n series-connected multijunction solar cells PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Mazouchi, M., Jia, J., Huo, Y., Miao, Y., Kang, Y., Chen, Y., Harris, J. S., Dutta, M. 2016; 213 (4): 941-946
  • Dry-wet digital etching of Ge1-xSnx APPLIED PHYSICS LETTERS Shang, C. K., Wang, V., Chen, R., Gupta, S., Huang, Y., Pao, J. J., Huo, Y., Sanchez, E., Kim, Y., Kamins, T. I., Harris, J. S. 2016; 108 (6)

    View details for DOI 10.1063/1.4941800

    View details for Web of Science ID 000373056300042

  • Photovoltaic Pixels for Neural Stimulation: Circuit Models and Performance. IEEE transactions on biomedical circuits and systems Boinagrov, D., Lei, X., Goetz, G., Kamins, T. I., Mathieson, K., Galambos, L., Harris, J. S., Palanker, D. 2016; 10 (1): 85-97

    Abstract

    Photovoltaic conversion of pulsed light into pulsed electric current enables optically-activated neural stimulation with miniature wireless implants. In photovoltaic retinal prostheses, patterns of near-infrared light projected from video goggles onto subretinal arrays of photovoltaic pixels are converted into patterns of current to stimulate the inner retinal neurons. We describe a model of these devices and evaluate the performance of photovoltaic circuits, including the electrode-electrolyte interface. Characteristics of the electrodes measured in saline with various voltages, pulse durations, and polarities were modeled as voltage-dependent capacitances and Faradaic resistances. The resulting mathematical model of the circuit yielded dynamics of the electric current generated by the photovoltaic pixels illuminated by pulsed light. Voltages measured in saline with a pipette electrode above the pixel closely matched results of the model. Using the circuit model, our pixel design was optimized for maximum charge injection under various lighting conditions and for different stimulation thresholds. To speed discharge of the electrodes between the pulses of light, a shunt resistor was introduced and optimized for high frequency stimulation.

    View details for DOI 10.1109/TBCAS.2014.2376528

    View details for PubMedID 25622325

  • Nanoelectronic three-dimensional (3D) nanotip sensing array for real-time, sensitive, label-free sequence specific detection of nucleic acids. Biomedical microdevices Esfandyarpour, R., Yang, L., Koochak, Z., Harris, J. S., Davis, R. W. 2016; 18 (1): 7-?

    Abstract

    The improvements in our ability to sequence and genotype DNA have opened up numerous avenues in the understanding of human biology and medicine with various applications, especially in medical diagnostics. But the realization of a label free, real time, high-throughput and low cost biosensing platforms to detect molecular interactions with a high level of sensitivity has been yet stunted due to two factors: one, slow binding kinetics caused by the lack of probe molecules on the sensors and two, limited mass transport due to the planar structure (two-dimensional) of the current biosensors. Here we present a novel three-dimensional (3D), highly sensitive, real-time, inexpensive and label-free nanotip array as a rapid and direct platform to sequence-specific DNA screening. Our nanotip sensors are designed to have a nano sized thin film as their sensing area (~ 20 nm), sandwiched between two sensing electrodes. The tip is then conjugated to a DNA oligonucleotide complementary to the sequence of interest, which is electrochemically detected in real-time via impedance changes upon the formation of a double-stranded helix at the sensor interface. This 3D configuration is specifically designed to improve the biomolecular hit rate and the detection speed. We demonstrate that our nanotip array effectively detects oligonucleotides in a sequence-specific and highly sensitive manner, yielding concentration-dependent impedance change measurements with a target concentration as low as 10 pM and discrimination against even a single mismatch. Notably, our nanotip sensors achieve this accurate, sensitive detection without relying on signal indicators or enhancing molecules like fluorophores. It can also easily be scaled for highly multiplxed detection with up to 5000 sensors/square centimeter, and integrated into microfluidic devices. The versatile, rapid, and sensitive performance of the nanotip array makes it an excellent candidate for point-of-care diagnostics, and high-throughput DNA analysis applications.

    View details for DOI 10.1007/s10544-016-0032-8

    View details for PubMedID 26780442

  • Interactions of Prosthetic and Natural Vision in Animals With Local Retinal Degeneration INVESTIGATIVE OPHTHALMOLOGY & VISUAL SCIENCE Lorach, H., Lei, X., Galambos, L., Kamins, T., Mathieson, K., Dalal, R., Huie, P., Harris, J., Palanker, D. 2015; 56 (12): 7444-7450

    Abstract

    Prosthetic restoration of partial sensory loss leads to interactions between artificial and natural inputs. Ideally, the rehabilitation should allow perceptual fusion of the two modalities. Here we studied the interactions between normal and prosthetic vision in a rodent model of local retinal degeneration.Implantation of a photovoltaic array in the subretinal space of normally sighted rats induced local degeneration of the photoreceptors above the chip, and the inner retinal neurons in this area were electrically stimulated by the photovoltaic implant powered by near-infrared (NIR) light. We studied prosthetic and natural visually evoked potentials (VEP) in response to simultaneous stimulation by NIR and visible light patterns.We demonstrate that electrical and natural VEPs summed linearly in the visual cortex, and both responses decreased under brighter ambient light. Responses to visible light flashes increased over 3 orders of magnitude of contrast (flash/background), while for electrical stimulation the contrast range was limited to 1 order of magnitude. The maximum amplitude of the prosthetic VEP was three times lower than the maximum response to a visible flash over the same area on the retina.Ambient light affects prosthetic responses, albeit much less than responses to visible stimuli. Prosthetic representation of contrast in the visual scene can be encoded, to a limited extent, by the appropriately calibrated stimulus intensity, which also depends on the ambient light conditions. Such calibration will be important for patients combining central prosthetic vision with natural peripheral sight, such as in age-related macular degeneration.

    View details for DOI 10.1167/iovs.15-17521

    View details for Web of Science ID 000368238200056

    View details for PubMedCentralID PMC5110201

  • Dielectric laser acceleration of sub-100 keV electrons with silicon dual-pillar grating structures OPTICS LETTERS Leedle, K. J., Ceballos, A., Deng, H., Solgaard, O., Pease, R. F., Byer, R. L., Harris, J. S. 2015; 40 (18): 4344-4347

    Abstract

    We present the demonstration of high-gradient laser acceleration and deflection of electrons with silicon dual-pillar grating structures using both evanescent inverse Smith-Purcell modes and coupled modes. Our devices accelerate subrelativistic 86.5 and 96.3 keV electrons by 2.05 keV over 5.6 μm distance for accelerating gradients of 370 MeV/m with a 3 nJ mode-locked Ti:sapphire laser. We also show that dual pillars can produce uniform accelerating gradients with a coupled-mode field profile. These results represent a significant step toward making practical dielectric laser accelerators for ultrafast, medical, and high-energy applications.

    View details for DOI 10.1364/OL.40.004344

    View details for Web of Science ID 000361556700040

  • Investigation of germanium quantum-well light sources OPTICS EXPRESS Fei, E. T., Chen, X., Zang, K., Huo, Y., Shambat, G., Miller, G., Liu, X., Dutt, R., Kamins, T. I., Vuckovic, J., Harris, J. S. 2015; 23 (17): 22424-22430

    Abstract

    In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurements show the temperature-dependent properties of our Ge quantum-well devices, which are in good agreement with our theoretical models. We also demonstrate the PL measurements of Ge quantum-well microdisks using tapered-fiber collection method and quantify the optical loss of the Ge quantum-well structure from the measured PL spectra for the first time.

    View details for DOI 10.1364/OE.23.022424

    View details for Web of Science ID 000362418300078

    View details for PubMedID 26368212

  • Epitaxial growth of GaP/AlGaP mirrors on Si for low thermal noise optical coatings OPTICAL MATERIALS EXPRESS Lin, A. C., Bassiri, R., Omar, S., Markosyan, A. S., Lantz, B., Route, R., Byer, R. L., Harris, J. S., Fejer, M. M. 2015; 5 (8): 1890-1897
  • Performance of photovoltaic arrays in-vivo and characteristics of prosthetic vision in animals with retinal degeneration VISION RESEARCH Lorach, H., Goetz, G., Mandel, Y., Lei, X., Kamins, T. I., Mathieson, K., Huie, P., Dalal, R., Harris, J. S., Palanker, D. 2015; 111: 142-148

    Abstract

    Loss of photoreceptors during retinal degeneration leads to blindness, but information can be reintroduced into the visual system using electrical stimulation of the remaining retinal neurons. Subretinal photovoltaic arrays convert pulsed illumination into pulsed electric current to stimulate the inner retinal neurons. Since required irradiance exceeds the natural luminance levels, an invisible near-infrared (915 nm) light is used to avoid photophobic effects. We characterized the thresholds and dynamic range of cortical responses to prosthetic stimulation with arrays of various pixel sizes and with different number of photodiodes. Stimulation thresholds for devices with 140 μm pixels were approximately half those of 70 μm pixels, and with both pixel sizes, thresholds were lower with 2 diodes than with 3 diodes per pixel. In all cases these thresholds were more than two orders of magnitude below the ocular safety limit. At high stimulation frequencies (>20 Hz), the cortical response exhibited flicker fusion. Over one order of magnitude of dynamic range could be achieved by varying either pulse duration or irradiance. However, contrast sensitivity was very limited. Cortical responses could be detected even with only a few illuminated pixels. Finally, we demonstrate that recording of the corneal electric potential in response to patterned illumination of the subretinal arrays allows monitoring the current produced by each pixel, and thereby assessing the changes in the implant performance over time.

    View details for DOI 10.1016/j.visres.2014.09.007

    View details for PubMedID 25255990

  • Photovoltaic restoration of sight with high visual acuity NATURE MEDICINE Lorach, H., Goetz, G., Smith, R., Lei, X., Mandel, Y., Kamins, T., Mathieson, K., Huie, P., Harris, J., Sher, A., Palanker, D. 2015; 21 (5): 476-U254

    Abstract

    Patients with retinal degeneration lose sight due to the gradual demise of photoreceptors. Electrical stimulation of surviving retinal neurons provides an alternative route for the delivery of visual information. We demonstrate that subretinal implants with 70-μm-wide photovoltaic pixels provide highly localized stimulation of retinal neurons in rats. The electrical receptive fields recorded in retinal ganglion cells were similar in size to the natural visual receptive fields. Similarly to normal vision, the retinal response to prosthetic stimulation exhibited flicker fusion at high frequencies, adaptation to static images and nonlinear spatial summation. In rats with retinal degeneration, these photovoltaic arrays elicited retinal responses with a spatial resolution of 64 ± 11 μm, corresponding to half of the normal visual acuity in healthy rats. The ease of implantation of these wireless and modular arrays, combined with their high resolution, opens the door to the functional restoration of sight in patients blinded by retinal degeneration.

    View details for DOI 10.1038/nm.3851

    View details for Web of Science ID 000354068800014

    View details for PubMedID 25915832

  • Photovoltaic restoration of sight with high visual acuity. Nature medicine Lorach, H., Goetz, G., Smith, R., Lei, X., Mandel, Y., Kamins, T., Mathieson, K., Huie, P., Harris, J., Sher, A., Palanker, D. 2015; 21 (5): 476-482

    Abstract

    Patients with retinal degeneration lose sight due to the gradual demise of photoreceptors. Electrical stimulation of surviving retinal neurons provides an alternative route for the delivery of visual information. We demonstrate that subretinal implants with 70-μm-wide photovoltaic pixels provide highly localized stimulation of retinal neurons in rats. The electrical receptive fields recorded in retinal ganglion cells were similar in size to the natural visual receptive fields. Similarly to normal vision, the retinal response to prosthetic stimulation exhibited flicker fusion at high frequencies, adaptation to static images and nonlinear spatial summation. In rats with retinal degeneration, these photovoltaic arrays elicited retinal responses with a spatial resolution of 64 ± 11 μm, corresponding to half of the normal visual acuity in healthy rats. The ease of implantation of these wireless and modular arrays, combined with their high resolution, opens the door to the functional restoration of sight in patients blinded by retinal degeneration.

    View details for DOI 10.1038/nm.3851

    View details for PubMedID 25915832

  • Bias-dependence of luminescent coupling efficiency in multijunction solar cells OPTICS EXPRESS Jia, J., Miao, Y., Kang, Y., Huo, Y., Mazouchi, M., Chen, Y., Zhao, L., Deng, H., Supaniratisai, P., AlQahtani, S. H., Harris, J. S. 2015; 23 (7): A219-A231

    Abstract

    In this work, we demonstrate an improved method to simulate the characteristics of multijunction solar cell by introducing a bias-dependent luminescent coupling efficiency. The standard two-diode equivalent-circuit model with constant luminescent coupling efficiency has limited accuracy because it does not include the recombination current from photogenerated carriers. Therefore, we propose an alternative analytical method with bias-dependent luminescent coupling efficiency to model multijunction cell behavior. We show that there is a noticeable difference in the J-V characteristics and cell performance generated by simulations with a constant vs. bias-dependent coupling efficiency. The results indicate that introducing a bias-dependent coupling efficiency produces more accurate modeling of multijunction cell behavior under real operating conditions.

    View details for DOI 10.1364/OE.23.00A219

    View details for Web of Science ID 000352290000004

    View details for PubMedID 25968788

  • Microring bio-chemical sensor with integrated low dark current Ge photodetector APPLIED PHYSICS LETTERS Zang, K., Zhang, D., Huo, Y., Chen, X., Lu, C., Fei, E. T., Kamins, T. I., Feng, X., Huang, Y., Harris, J. S. 2015; 106 (10)

    View details for DOI 10.1063/1.4915094

    View details for Web of Science ID 000351397600011

  • Laser acceleration and deflection of 96.3 keV electrons with a silicon dielectric structure OPTICA Leedle, K. J., Pease, R. F., Byer, R. L., Harris, J. S. 2015; 2 (2): 158-161
  • Efficiency Enhancement of Gallium Arsenide Photovoltaics Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers JOURNAL OF NANOMATERIALS Kang, Y., Liang, D., Mehra, S., Huo, Y., Chen, Y., Christoforo, M. G., Salleo, A., Harris, J. S. 2015
  • Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi₂Te₃ Surfaces under Ambient Conditions. Nano letters Macedo, R. J., Harrison, S. E., Dorofeeva, T. S., Harris, J. S., Kiehl, R. A. 2015; 15 (7): 4241–47

    Abstract

    The local electrical characteristics on the surface of MBE-grown Bi2Te3 are probed under ambient conditions by conductive atomic force microscopy. Nanoscale mapping reveals a 10-100× enhancement in current at step-edges compared to that on terraces. Analysis of the local current-voltage characteristics indicates that the transport mechanism is similar for step-edges and terraces. Comparison of the results with those for control samples shows that the current enhancement is not a measurement artifact but instead is due to local differences in electronic properties. The likelihood of various possible mechanisms is discussed. The absence of enhancement at the step-edges for graphite terraces is consistent with the intriguing possibility that spin-orbit coupling and topological effects play a significant role in the step-edge current enhancement in Bi2Te3.

    View details for PubMedID 26030139

  • On-chip plasmonic waveguide optical waveplate. Scientific reports Gao, L., Huo, Y., Zang, K., Paik, S., Chen, Y., Harris, J. S., Zhou, Z. 2015; 5: 15794-?

    View details for DOI 10.1038/srep15794

    View details for PubMedID 26507563

  • Interactions of Prosthetic and Natural Vision in Animals With Local Retinal Degeneration. Investigative ophthalmology & visual science Lorach, H., Lei, X., Galambos, L., Kamins, T., Mathieson, K., Dalal, R., Huie, P., Harris, J., Palanker, D. 2015; 56 (12): 7444–50

    Abstract

    Prosthetic restoration of partial sensory loss leads to interactions between artificial and natural inputs. Ideally, the rehabilitation should allow perceptual fusion of the two modalities. Here we studied the interactions between normal and prosthetic vision in a rodent model of local retinal degeneration.Implantation of a photovoltaic array in the subretinal space of normally sighted rats induced local degeneration of the photoreceptors above the chip, and the inner retinal neurons in this area were electrically stimulated by the photovoltaic implant powered by near-infrared (NIR) light. We studied prosthetic and natural visually evoked potentials (VEP) in response to simultaneous stimulation by NIR and visible light patterns.We demonstrate that electrical and natural VEPs summed linearly in the visual cortex, and both responses decreased under brighter ambient light. Responses to visible light flashes increased over 3 orders of magnitude of contrast (flash/background), while for electrical stimulation the contrast range was limited to 1 order of magnitude. The maximum amplitude of the prosthetic VEP was three times lower than the maximum response to a visible flash over the same area on the retina.Ambient light affects prosthetic responses, albeit much less than responses to visible stimuli. Prosthetic representation of contrast in the visual scene can be encoded, to a limited extent, by the appropriately calibrated stimulus intensity, which also depends on the ambient light conditions. Such calibration will be important for patients combining central prosthetic vision with natural peripheral sight, such as in age-related macular degeneration.

    View details for PubMedID 26618643

  • Photovoltaic Restoration of Sight with High Visual Acuity in Rats with Retinal Degeneration 25th Conference on Ophthalmic Technologies held as a part of the SPIE Photonics West BiOS Meeting Palanker, D., Goetz, G., Lorach, H., Mandel, Y., Smith, R., Boinagrov, D., Lei, X., KAMINS, T., Harris, J., Mathieson, K., Sher, A. SPIE-INT SOC OPTICAL ENGINEERING. 2015

    View details for DOI 10.1117/12.2081068

    View details for Web of Science ID 000353411700013

  • Controlled removal of amorphous Se capping layer from a topological insulator APPLIED PHYSICS LETTERS Virwani, K., Harrison, S. E., Pushp, A., Topuria, T., Delenia, E., Rice, P., Kellock, A., Collins-McIntyre, L., Harris, J., Hesjedal, T., Parkin, S. 2014; 105 (24)

    View details for DOI 10.1063/1.4904803

    View details for Web of Science ID 000346643600022

  • Nanoelectronic impedance detection of target cells. Biotechnology and bioengineering Esfandyarpour, R., Javanmard, M., Koochak, Z., Harris, J. S., Davis, R. W. 2014; 111 (6): 1161-1169

    Abstract

    Detection of cells is typically performed using optical fluorescence based techniques such as flow cytometry. Here we present the impedance detection of target cells using a nanoelectronic probe we have developed, which we refer to as the nanoneedle biosensor. The nanoneedle consists of a thin film conducting electrode layer at the bottom, an insulative oxide layer above, another conductive electrode layer above, and a protective oxide above. The electrical impedance is measured between the two electrode layers. Cells captured on the surface of the nanoneedle tip results in a decrease in the impedance across the sensing electrodes. The basic mechanisms behind the electrical response of cells in solution under an applied alternating electrical field stems from modulation of the relative permittivity at the interface. In this paper we discuss, the circuit model, the nanofabrication, and the testing and characterization of the sensor. We demonstrate proof of concept for detection of yeast cells with specificity. We envision the sensor presented in this paper to be combined with microfluidic pre-concentration technologies to develop low cost point-of-care diagnostic assays for the clinical setting.

    View details for DOI 10.1002/bit.25171

    View details for PubMedID 24338648

  • Electrically driven subwavelength optical nanocircuits NATURE PHOTONICS Huang, K. C., Seo, M., Sarmiento, T., Huo, Y., Harris, J. S., Brongersma, M. L. 2014; 8 (3): 244-249
  • Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics. Nano letters Chen, R., Gupta, S., Huang, Y., Huo, Y., Rudy, C. W., Sanchez, E., Kim, Y., Kamins, T. I., Saraswat, K. C., Harris, J. S. 2014; 14 (1): 37-43

    Abstract

    We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon. The structure theoretically exhibits many electronic and optical advantages in laser design, and microdisk resonators using these structures can be precisely fabricated away from highly defective regions in the Ge buffer using a novel etch-stop process. Photoluminescence measurements on 2.7 μm diameter microdisks reveal sharp whispering-gallery-mode resonances (Q > 340) with strong luminescence.

    View details for DOI 10.1021/nl402815v

    View details for PubMedID 24299070

  • Time-resolved photoluminescence studies of annealed 1.3-µm GaInNAsSb quantum wells. Nanoscale research letters Baranowski, M., Kudrawiec, R., Syperek, M., Misiewicz, J., Sarmiento, T., Harris, J. S. 2014; 9 (1): 81-?

    Abstract

    Time-resolved photoluminescence (PL) was applied to study the dynamics of carrier recombination in GaInNAsSb quantum wells (QWs) emitting near 1.3 μm and annealed at various temperatures. It was observed that the annealing temperature has a strong influence on the PL decay time, and hence, it influences the optical quality of GaInNAsSb QWs. At low temperatures, the PL decay time exhibits energy dependence (i.e., the decay times change for different energies of emitted photons), which can be explained by the presence of localized states. This energy dependence of PL decay times was fitted by a phenomenological formula, and the average value of E0, which describes the energy distribution of localized states, was extracted from this fit and found to be smallest (E0 = 6 meV) for the QW annealed at 700°C. In addition, the value of PL decay time at the peak energy was compared for all samples. The longest PL decay time (600 ps) was observed for the sample annealed at 700°C. It means that based on the PL dynamics, the optimal annealing temperature for this QW is approximately 700°C.

    View details for DOI 10.1186/1556-276X-9-81

    View details for PubMedID 24533740

    View details for PubMedCentralID PMC3942105

  • Surface-Normal Ge/SiGe Asymmetric Fabry-Perot Optical Modulators Fabricated on Silicon Substrates JOURNAL OF LIGHTWAVE TECHNOLOGY Audet, R. M., Edwards, E. H., Balram, K. C., Claussen, S. A., Schaevitz, R. K., Tasyurek, E., Rong, Y., Fei, E. I., Kamins, T. I., Harris, J. S., Miller, D. A. 2013; 31 (24): 3995-4003
  • Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment APPLIED PHYSICS LETTERS Gupta, S., Chen, R., Harris, J. S., Saraswat, K. C. 2013; 103 (24)

    View details for DOI 10.1063/1.4850518

    View details for Web of Science ID 000328706500018

  • Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application APPLIED PHYSICS LETTERS Cho, S., Kang, I. M., Kim, K. R., Park, B., Harris, J. S. 2013; 103 (22)

    View details for DOI 10.1063/1.4833295

    View details for Web of Science ID 000327696300033

  • Simulation and fabrication of a new novel 3D injectable biosensor for high throughput genomics and proteomics in a lab-on-a-chip device. Nanotechnology Esfandyarpour, R., Esfandyarpour, H., Harris, J. S., Davis, R. W. 2013; 24 (46): 465301-?

    Abstract

    Biosensors are used for the detection of biochemical molecules such as proteins and nucleic acids. Traditional techniques, such as enzyme-linked immuno-sorbent assay (ELISA), are sensitive but require several hours to yield a result and usually require the attachment of a fluorophore molecule to the target molecule. Micromachined biosensors that employ electrical detection are now being developed. Here we describe one such device, which is ultrasensitive, real-time, label free and localized. It is called the nanoneedle biosensor and shows promise to overcome some of the current limitations of biosensors. The key element of this device is a 10 nm wide annular gap at the end of the needle, which is the sensitive part of the sensor. The total diameter of the sensor is about 100 nm. Any change in the population of molecules in this gap results in a change of impedance across the gap. Single molecule detection should be possible because the sensory part of the sensor is in the range of bio-molecules of interest. To increase throughput we can flow the solution containing the target molecules over an array of such structures, each with its own integrated read-out circuitry to allow 'real-time' detection (i.e. several minutes) of label free molecules without sacrificing sensitivity. To fabricate the arrays we used electron beam lithography together with associated pattern transfer techniques. Preliminary measurements on individual needle structures in water are consistent with the design. Since the proposed sensor has a rigid nano-structure, this technology, once fully developed, could ultimately be used to directly monitor protein quantities within a single living cell, an application that would have significant utility for drug screening and studying various intracellular signaling pathways.

    View details for DOI 10.1088/0957-4484/24/46/465301

    View details for PubMedID 24149048

  • Simulation and fabrication of a new novel 3D injectable biosensor for high throughput genomics and proteomics in a lab-on-a-chip device. Nanotechnology Esfandyarpour, R., Esfandyarpour, H., Harris, J. S., Davis, R. W. 2013; 24 (46): 465301-?

    Abstract

    Biosensors are used for the detection of biochemical molecules such as proteins and nucleic acids. Traditional techniques, such as enzyme-linked immuno-sorbent assay (ELISA), are sensitive but require several hours to yield a result and usually require the attachment of a fluorophore molecule to the target molecule. Micromachined biosensors that employ electrical detection are now being developed. Here we describe one such device, which is ultrasensitive, real-time, label free and localized. It is called the nanoneedle biosensor and shows promise to overcome some of the current limitations of biosensors. The key element of this device is a 10 nm wide annular gap at the end of the needle, which is the sensitive part of the sensor. The total diameter of the sensor is about 100 nm. Any change in the population of molecules in this gap results in a change of impedance across the gap. Single molecule detection should be possible because the sensory part of the sensor is in the range of bio-molecules of interest. To increase throughput we can flow the solution containing the target molecules over an array of such structures, each with its own integrated read-out circuitry to allow 'real-time' detection (i.e. several minutes) of label free molecules without sacrificing sensitivity. To fabricate the arrays we used electron beam lithography together with associated pattern transfer techniques. Preliminary measurements on individual needle structures in water are consistent with the design. Since the proposed sensor has a rigid nano-structure, this technology, once fully developed, could ultimately be used to directly monitor protein quantities within a single living cell, an application that would have significant utility for drug screening and studying various intracellular signaling pathways.

    View details for DOI 10.1088/0957-4484/24/46/465301

    View details for PubMedID 24149048

  • Single-cell photonic nanocavity probes. Nano letters Shambat, G., Kothapalli, S., Provine, J., Sarmiento, T., Harris, J., Gambhir, S. S., Vuckovic, J. 2013; 13 (11): 4999-5005

    Abstract

    In this report, we demonstrate for the first time photonic nanocavities operating inside single biological cells. Here we develop a nanobeam photonic crystal (PC) cavity as an advanced cellular nanoprobe, active in nature, and configurable to provide a multitude of actions for both intracellular sensing and control. Our semiconductor nanocavity probes emit photoluminescence (PL) from embedded quantum dots (QD) and sustain high quality resonant photonic modes inside cells. The probes are shown to be minimally cytotoxic to cells from viability studies, and the beams can be loaded in cells and tracked for days at a time, with cells undergoing regular division with the beams. We present in vitro label-free protein sensing with our probes to detect streptavidin as a path towards real-time biomarker and biomolecule detection inside single cells. The results of this work will enable new areas of research merging the strengths of photonic nanocavities with fundamental cell biology.

    View details for DOI 10.1021/nl304602d

    View details for PubMedID 23387382

  • Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy JOURNAL OF APPLIED PHYSICS Lastras-Martinez, L. F., Herrera-Jasso, R., Ulloa-Castillo, N. A., Balderas-Navarro, R. E., Lastras-Martinez, A., Lin, A. C., Fejer, M. M., Harris, J. S. 2013; 114 (17)

    View details for DOI 10.1063/1.4828737

    View details for Web of Science ID 000327591900012

  • Ultra-Compact and Low-Loss Polarization Rotator Based on Asymmetric Hybrid Plasmonic Waveguide IEEE PHOTONICS TECHNOLOGY LETTERS Gao, L., Huo, Y., Harris, J. S., Zhou, Z. 2013; 25 (21): 2081-2084
  • High-Efficiency Nanostructured Window GaAs Solar Cells. Nano letters Liang, D., Kang, Y., Huo, Y., Chen, Y., Cui, Y., Harris, J. S. 2013; 13 (10): 4850-4856

    Abstract

    Nanostructures have been widely used in solar cells due to their extraordinary optical properties. In most nanostructured cells, high short circuit current has been obtained due to enhanced light absorption. However, most of them suffer from lowered open circuit voltage and fill factor. One of the main challenges is formation of good junction and electrical contact. In particular, nanostructures in GaAs only have shown unsatisfactory performances (below 5% in energy conversion efficiency) which cannot match their ideal material properties and the record photovoltaic performances in industry. Here we demonstrate a completely new design for nanostructured solar cells that combines nanostructured window layer, metal mesa bar contact with small area, high quality planar junction. In this way, we not only keep the advanced optical properties of nanostructures such as broadband and wide angle antireflection, but also minimize its negative impact on electrical properties. High light absorption, efficient carrier collection, leakage elimination, and good lateral conductance can be simultaneously obtained. A nanostructured window cell using GaAs junction and AlGaAs nanocone window demonstrates 17% energy conversion efficiency and 0.982 V high open circuit voltage.

    View details for DOI 10.1021/nl402680g

    View details for PubMedID 24021024

  • Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Dutt, B., Lin, H., Sukhdeo, D. S., Vulovic, B. M., Gupta, S., Nam, D., Saraswat, K. C., Harris, J. S. 2013; 19 (5)
  • Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1-xSnx): A Novel Route for Ge1-xSnx Nanostructure Fabrication. Nano letters Gupta, S., Chen, R., Huang, Y., Kim, Y., Sanchez, E., Harris, J. S., Saraswat, K. C. 2013; 13 (8): 3783-3790

    Abstract

    We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge(1-x)Sn(x)). We address the challenges in synthesis of high-quality, defect-free Ge(1-x)Sn(x) thin films by using Ge virtual substrates as a template for Ge(1-x)Sn(x) epitaxy. The etch process is applied to selectively remove the stress-inducing Ge virtual substrate and achieve strain-free, direct band gap Ge0.92Sn0.08. The semiconductor processing technology presented in this work provides a robust method for fabrication of innovative Ge(1-x)Sn(x) nanostructures whose realization can prove to be challenging, if not impossible, otherwise.

    View details for DOI 10.1021/nl4017286

    View details for PubMedID 23834495

  • Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor BIOMEDICAL OPTICS EXPRESS O'Sullivan, T. D., Heitz, R. T., Parashurama, N., Barkin, D. B., Wooley, B. A., Gambhir, S. S., Harris, J. S., Levi, O. 2013; 4 (8): 1332-1341

    Abstract

    Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm(3) and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecular probes in small animals. We integrated a critical enabling component, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit, which digitized the fluorescence signal to achieve autofluorescence-limited sensitivity. After surgical implantation of the lightweight sensor for two weeks, we obtained continuous and dynamic fluorophore measurements while the subject was un-anesthetized and mobile. The technology demonstrated here represents a critical step in the path toward untethered optical sensing using an integrated optoelectronic implant.

    View details for DOI 10.1364/BOE.4.001332

    View details for Web of Science ID 000322618900008

    View details for PubMedCentralID PMC3756575

  • Label-free electronic probing of nucleic acids and proteins at the nanoscale using the nanoneedle biosensor BIOMICROFLUIDICS Esfandyarpour, R., Javanmard, M., Koochak, Z., Esfandyarpour, H., Harris, J. S., Davis, R. W. 2013; 7 (4)

    Abstract

    Detection of proteins and nucleic acids is dominantly performed using optical fluorescence based techniques, which are more costly and timely than electrical detection due to the need for expensive and bulky optical equipment and the process of fluorescent tagging. In this paper, we discuss our study of the electrical properties of nucleic acids and proteins at the nanoscale using a nanoelectronic probe we have developed, which we refer to as the Nanoneedle biosensor. The nanoneedle consists of four thin film layers: a conductive layer at the bottom acting as an electrode, an oxide layer on top, and another conductive layer on top of that, with a protective oxide above. The presence of proteins and nucleic acids near the tip results in a decrease in impedance across the sensing electrodes. There are three basic mechanisms behind the electrical response of DNA and protein molecules in solution under an applied alternating electrical field. The first change stems from modulation of the relative permittivity at the interface. The second mechanism is the formation and relaxation of the induced dipole moment. The third mechanism is the tunneling of electrons through the biomolecules. The results presented in this paper can be extended to develop low cost point-of-care diagnostic assays for the clinical setting.

    View details for DOI 10.1063/1.4817771

    View details for Web of Science ID 000323907600016

    View details for PubMedCentralID PMC3751968

  • Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials. Nature communications Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Galambos, L., Manivanh, R., Harris, J., Palanker, D. 2013; 4: 1980-?

    Abstract

    We have previously developed a wireless photovoltaic retinal prosthesis, in which camera-captured images are projected onto the retina using pulsed near-IR light. Each pixel in the subretinal implant directly converts pulsed light into local electric current to stimulate the nearby inner retinal neurons. Here we report that implants having pixel sizes of 280, 140 and 70 μm implanted in the subretinal space in rats with normal and degenerate retina elicit robust cortical responses upon stimulation with pulsed near-IR light. Implant-induced eVEP has shorter latency than visible light-induced VEP, its amplitude increases with peak irradiance and pulse duration, and decreases with frequency in the range of 2-20 Hz, similar to the visible light response. Modular design of the arrays allows scalability to a large number of pixels, and combined with the ease of implantation, offers a promising approach to restoration of sight in patients blinded by retinal degenerative diseases.

    View details for DOI 10.1038/ncomms2980

    View details for PubMedID 23778557

  • Two-step growth of high quality Bi2Te3 thin films on Al2O3 (0001) by molecular beam epitaxy APPLIED PHYSICS LETTERS Harrison, S. E., Li, S., Huo, Y., Zhou, B., Chen, Y. L., Harris, J. S. 2013; 102 (17)

    View details for DOI 10.1063/1.4803717

    View details for Web of Science ID 000318553000022

  • Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers PHYSICAL REVIEW LETTERS Pavarelli, N., Ochalski, T. J., Murphy-Armando, F., Huo, Y., Schmidt, M., Huyet, G., Harris, J. S. 2013; 110 (17)

    Abstract

    We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the electronegativity of the layer in contact with Ge, leading to different types of optical transitions in the heterostructure. When group-V atoms compose the interfaces, only electrons are confined in Ge, whereas both carriers are confined when the interface consists of group-III atoms. The different carrier confinement results in different emission dynamics behavior. This study provides a solution to obtain efficient light emission from Ge.

    View details for DOI 10.1103/PhysRevLett.110.177404

    View details for Web of Science ID 000318188100016

    View details for PubMedID 23679775

  • Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing JOURNAL OF CRYSTAL GROWTH Chen, R., Huang, Y., Gupta, S., Lin, A. C., Sanchez, E., Kim, Y., Saraswat, K. C., Kamins, T. I., Harris, J. S. 2013; 365: 29-34
  • Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well JOURNAL OF PHYSICS-CONDENSED MATTER Baranowski, M., Kudrawiec, R., Latkowska, M., Syperek, M., Misiewicz, J., Sarmiento, T., Harris, J. S. 2013; 25 (6)

    Abstract

    In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ~700 °C and ~760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ~720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.

    View details for DOI 10.1088/0953-8984/25/6/065801

    View details for Web of Science ID 000313950600015

    View details for PubMedID 23306016

  • Microneedle biosensor: A method for direct label-free real time protein detection SENSORS AND ACTUATORS B-CHEMICAL Esfandyarpour, R., Esfandyarpour, H., Javanmard, M., Harris, J. S., Davis, R. W. 2013; 177: 848-855

    Abstract

    Here we present the development of an array of electrical micro-biosensors in a microfluidic channel, called microneedle biosensors. A microneedle biosensor is a real-time, label-free, direct electrical detection platform, which is capable of high sensitivity detection, measuring the change in ionic current and impedance modulation, due to the presence or reaction of biomolecules such as proteins and nucleic acids. In this study, we successfully fabricated and electrically characterized the sensors and demonstrated successful detection of target protein. In this study, we used biotinylated bovine serum albumin as the receptor and streptavidin as the target analyte.

    View details for DOI 10.1016/j.snb.2012.11.064

    View details for Web of Science ID 000315751000113

    View details for PubMedCentralID PMC3551587

  • Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Cho, S., Kim, H., Jhon, H., Kang, I. M., Park, B., Harris, J. S. 2013; 1 (2): 48-53
  • Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH Lin, A. C., Fejer, M. M., Harris, J. S. 2013; 363: 258-263
  • Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon OPTICS EXPRESS Edwards, E. H., Lever, L., Fei, E. T., Kamins, T. I., Ikonic, Z., Harris, J. S., Kelsall, R. W., Miller, D. A. 2013; 21 (1): 867-876

    Abstract

    We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.

    View details for PubMedID 23388980

  • Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials. Nature communications Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Galambos, L., Manivanh, R., Harris, J., Palanker, D. 2013; 4: 1980-?

    Abstract

    We have previously developed a wireless photovoltaic retinal prosthesis, in which camera-captured images are projected onto the retina using pulsed near-IR light. Each pixel in the subretinal implant directly converts pulsed light into local electric current to stimulate the nearby inner retinal neurons. Here we report that implants having pixel sizes of 280, 140 and 70 μm implanted in the subretinal space in rats with normal and degenerate retina elicit robust cortical responses upon stimulation with pulsed near-IR light. Implant-induced eVEP has shorter latency than visible light-induced VEP, its amplitude increases with peak irradiance and pulse duration, and decreases with frequency in the range of 2-20 Hz, similar to the visible light response. Modular design of the arrays allows scalability to a large number of pixels, and combined with the ease of implantation, offers a promising approach to restoration of sight in patients blinded by retinal degenerative diseases.

    View details for DOI 10.1038/ncomms2980

    View details for PubMedID 23778557

  • Microneedle Biosensor: A Method for Direct Label-free Real Time Protein Detection. Sensors and actuators. B, Chemical Esfandyarpour, R., Esfandyarpour, H., Javanmard, M., Harris, J. S., Davis, R. W. 2013; 177: 848–55

    Abstract

    Here we present the development of an array of electrical micro-biosensors in a microfluidic channel, called microneedle biosensors. A microneedle biosensor is a real-time, label-free, direct electrical detection platform, which is capable of high sensitivity detection, measuring the change in ionic current and impedance modulation, due to the presence or reaction of biomolecules such as proteins and nucleic acids. In this study, we successfully fabricated and electrically characterized the sensors and demonstrated successful detection of target protein. In this study, we used biotinylated bovine serum albumin as the receptor and streptavidin as the target analyte.

    View details for PubMedID 23355762

  • Erratum: Publisher's Note: "Label-free electronic probing of nucleic acids and proteins at the nanoscale using the nanoneedle biosensor" [Biomicrofluidics 7, 044114 (2013)]. Biomicrofluidics Esfandyarpour, R., Javanmard, M., Koochak, Z., Esfandyarpour, H., Harris, J. S., Davis, R. W. 2013; 7 (4): 49901

    Abstract

    [This corrects the article on p. 044114 in vol. 7.].

    View details for PubMedID 24046801

  • Label-free electronic probing of nucleic acids and proteins at the nanoscale using the nanoneedle biosensor. Biomicrofluidics Esfandyarpour, R., Javanmard, M., Koochak, Z., Esfandyarpour, H., Harris, J. S., Davis, R. W. 2013; 7 (4): 44114-?

    Abstract

    Detection of proteins and nucleic acids is dominantly performed using optical fluorescence based techniques, which are more costly and timely than electrical detection due to the need for expensive and bulky optical equipment and the process of fluorescent tagging. In this paper, we discuss our study of the electrical properties of nucleic acids and proteins at the nanoscale using a nanoelectronic probe we have developed, which we refer to as the Nanoneedle biosensor. The nanoneedle consists of four thin film layers: a conductive layer at the bottom acting as an electrode, an oxide layer on top, and another conductive layer on top of that, with a protective oxide above. The presence of proteins and nucleic acids near the tip results in a decrease in impedance across the sensing electrodes. There are three basic mechanisms behind the electrical response of DNA and protein molecules in solution under an applied alternating electrical field. The first change stems from modulation of the relative permittivity at the interface. The second mechanism is the formation and relaxation of the induced dipole moment. The third mechanism is the tunneling of electrons through the biomolecules. The results presented in this paper can be extended to develop low cost point-of-care diagnostic assays for the clinical setting.

    View details for DOI 10.1063/1.4817771

    View details for PubMedID 24404047

  • Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor. Biomedical optics express O'Sullivan, T. D., Heitz, R. T., Parashurama, N., Barkin, D. B., Wooley, B. A., Gambhir, S. S., Harris, J. S., Levi, O. 2013; 4 (8): 1332-1341

    Abstract

    Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm(3) and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecular probes in small animals. We integrated a critical enabling component, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit, which digitized the fluorescence signal to achieve autofluorescence-limited sensitivity. After surgical implantation of the lightweight sensor for two weeks, we obtained continuous and dynamic fluorophore measurements while the subject was un-anesthetized and mobile. The technology demonstrated here represents a critical step in the path toward untethered optical sensing using an integrated optoelectronic implant.

    View details for DOI 10.1364/BOE.4.001332

    View details for PubMedID 24009996

  • Ge/SiGe Quantum Well Asymmetric Fabry-Perot Modulators on Silicon Substrates IEEE-Photonics-Society Summer Topical Meeting Audet, R. M., Edwards, E. H., Balram, K., Rong, Y., Harris, J. S., Miller, D. A. IEEE. 2013: 248–249
  • Photon-enhanced thermionic emission from heterostructures with low interface recombination. Nature communications Schwede, J. W., Sarmiento, T., NARASIMHAN, V. K., Rosenthal, S. J., Riley, D. C., Schmitt, F., Bargatin, I., Sahasrabuddhe, K., Howe, R. T., Harris, J. S., Melosh, N. A., Shen, Z. 2013; 4: 1576-?

    Abstract

    Photon-enhanced thermionic emission is a method of solar-energy conversion that promises to combine photon and thermal processes into a single mechanism, overcoming fundamental limits on the efficiency of photovoltaic cells. Photon-enhanced thermionic emission relies on vacuum emission of photoexcited electrons that are in thermal equilibrium with a semiconductor lattice, avoiding challenging non-equilibrium requirements and exotic material properties. However, although previous work demonstrated the photon-enhanced thermionic emission effect, efficiency has until now remained very low. Here we describe electron-emission measurements on a GaAs/AlGaAs heterostructure that introduces an internal interface, decoupling the basic physics of photon-enhanced thermionic emission from the vacuum emission process. Quantum efficiencies are dramatically higher than in previous experiments because of low interface recombination and are projected to increase another order of magnitude with more stable, low work-function coatings. The results highlight the effectiveness of the photon-enhanced thermionic emission process and demonstrate that efficient photon-enhanced thermionic emission is achievable, a key step towards realistic photon-enhanced thermionic emission based energy conversion.

    View details for DOI 10.1038/ncomms2577

    View details for PubMedID 23481384

  • Single-Cell Photonic Nanocavity Probes NANO Lett. Shambat, G., Kothapalli, S., R., Provine, J., Sarmiento, T., Harris, J., Gambhir, S., Sam 2013
  • Magnetic properties of gadolinium substituted Bi2Te3 thin films Appl. Phys. Lett. Harris, J., S., Li, S., Harrison, S., E., Huo, Y., Pushp, A., Yuan, H., T. 2013; 24 (102): 242412
  • Optical and Electronic Devices for Monolithically Integrated Photonics Circuits Cho, S., Kim, H., Park, B., G., Harris Jr., James, S. 2013
  • Design of High-Power Low-Noise 2-D Distributed Feedback Laser Paik, S., Cho, S., Leedle, K., Kim, H., Park, B., G., Harris, J., S. 2013
  • Silicon germanium waveguide for stronger optical confinement in integrated silicon photonics Photonics Nanostruct. Fundam. Appl. Cho, S., Park, J., Kim, H., Sinclair, R., Park, B., G., Harris Jr., J., S. 2013

    View details for DOI 10.1016/j.photonics.

  • Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling high-quality Ge (Sn) materials for micro and nanophotonics Nano Lett. Harris, J., S., Chen, R., Gupta, S., Huang, Y., C., Huo, Y., Rudy, C., W in press. 2013
  • Si/Ge/AlGaAs heterojunction high hole mobility transistor Cho, S., Kim, H., Park, B., G., Harris Jr., James, S. 2013
  • Low-Standby Power and High-Performance InAs/InGaAs/InP heterojunction Tunneling Field-Effect Transistor Harris, J., S., Cho, S., Woo, S., Yun, Kim, H., Seo, J. H., Lee, H., Gi 2013
  • Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy J. Appl. Phys. Harris, J., S., Lastras-Martınez, L., F., Herrera-Jasso, R., Ulloa-Castillo, N., A., Balderas-Navarro, R., E., Lastras-Martınez, A. 2013; 114: 173504
  • Germanium Waveguide for On-Chip Optical Interconnect Harris, J., S., Cho, S., Kim, H., Paik, S., Kang, I. M., Lee, J., H. 2013
  • Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application Harris, J., S., Yoon, Y., Jun, Cho, S., Seo, J., Hwa, Cho, E., S., Kang, S., W. 2013
  • Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application Appl. Phys. Lett. Cho, S., Kang, I. M., Kim, K., Rok, Park, B., G., Harris Jr., J., S. 2013; 22 (103): 222102-1 – 222102-4
  • Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications IEEE J. Electron Devices Soc. Cho, S., Kim, H., Sun, M., C., Kang, I. M., Park, B., G., Harris Jr., J., S. 2013; 2 (1): 48-53
  • MBE growth of tensile-strained Ge quantum wells and quantum dots Frontiers of Optoelectronics Huo, Y., Lin, H., Chen, R., Rong, Y., Kamins, T., I., Harris, J., S. 2013
  • (Invited) GeSn Channel n and p MOSFETs ECS Trans. Gupta, S., Chen, R., Vincent, B., Lin, D., Magyari-Kope, B., Caymax, M. 2013; 50: 937-941
  • In Vitro Optical Fiber Biosensor for Integrated Optical System Cho, S., Kallassi, P., El, Kim, H., Park, B., G., Harris Jr., J., S. 2013
  • Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics Harris, J., S., Lin, J. J., Gupta, S., Huang, Y., C., Kim, Y., Jin, M. 2013
  • High-Efficiency Nanostructured Window GaAs Solar Cells Nano Letters Liang, D., Kang, Y., Huo, Y., Chen, Y., Cui, Y., Harris, J., S. 2013; 10 (13): 4850-4856
  • Progress in orientation-patterned GaP for next-generation nonlinear optical devices Conference on Nonlinear Frequency Generation and Conversion - Materials, Devices, and Applications XII Tassev, V., Snure, M., Peterson, R., Schepler, K. L., Bedford, R., Mann, M., Vangala, S., Goodhue, W., Lin, A., Harris, J., Fejer, M., Schunemann, P. SPIE-INT SOC OPTICAL ENGINEERING. 2013

    View details for DOI 10.1117/12.2008057

    View details for Web of Science ID 000322536300022

  • Approaches for a Viable Germanium Laser: Tensile Strain, GeSn Alloys, and n-Type Doping 2nd IEEE-Photonics-Society Optical Interconnects Conference Sukhdeo, D. S., Lin, H., Nam, D., Yuan, Z., Vulovic, B. M., Gupta, S., Harris, J. S., Dutt, B. (., Saraswat, K. C. IEEE. 2013: 112–113
  • Towards a Photonic Crystal Mode-Locked Laser Conference on Novel In-Plane Semiconductor Lasers XII Leedle, K., Janjua, A., Paik, S., Schnitzer, M. J., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2013

    View details for DOI 10.1117/12.2005418

    View details for Web of Science ID 000322737200016

  • Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion Conference on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II Parameshwaran, V., Xu, X., Kang, Y., Harris, J., Wong, H. P., Clemens, B. SPIE-INT SOC OPTICAL ENGINEERING. 2013

    View details for DOI 10.1117/12.2003486

    View details for Web of Science ID 000322825200040

  • Photon-enhanced thermionic emission from heterostructures with low interface recombination. Nature communications Schwede, J. W., Sarmiento, T., NARASIMHAN, V. K., Rosenthal, S. J., Riley, D. C., Schmitt, F., Bargatin, I., Sahasrabuddhe, K., Howe, R. T., Harris, J. S., Melosh, N. A., Shen, Z. 2013; 4: 1576-?

    Abstract

    Photon-enhanced thermionic emission is a method of solar-energy conversion that promises to combine photon and thermal processes into a single mechanism, overcoming fundamental limits on the efficiency of photovoltaic cells. Photon-enhanced thermionic emission relies on vacuum emission of photoexcited electrons that are in thermal equilibrium with a semiconductor lattice, avoiding challenging non-equilibrium requirements and exotic material properties. However, although previous work demonstrated the photon-enhanced thermionic emission effect, efficiency has until now remained very low. Here we describe electron-emission measurements on a GaAs/AlGaAs heterostructure that introduces an internal interface, decoupling the basic physics of photon-enhanced thermionic emission from the vacuum emission process. Quantum efficiencies are dramatically higher than in previous experiments because of low interface recombination and are projected to increase another order of magnitude with more stable, low work-function coatings. The results highlight the effectiveness of the photon-enhanced thermionic emission process and demonstrate that efficient photon-enhanced thermionic emission is achievable, a key step towards realistic photon-enhanced thermionic emission based energy conversion.

    View details for DOI 10.1038/ncomms2577

    View details for PubMedID 23481384

  • In-vivo Performance of Photovoltaic Subretinal Prosthesis Conference on Ophthalmic Technologies XXIII as a part of the SPIE Photonics West BiOS Meeting Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Manivanh, R., Harris, J., Palanker, D. SPIE-INT SOC OPTICAL ENGINEERING. 2013

    View details for DOI 10.1117/12.2001750

    View details for Web of Science ID 000325430800005

  • Design optimization of an optically drivable heterogeneous MOSFET with silicon compatibility Conference on Physics and Simulation of Optoelectronic Devices XXI Cho, S., Kim, H., Yoo, S. J., Park, B., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2013

    View details for DOI 10.1117/12.2005813

    View details for Web of Science ID 000325433900042

  • Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators OPTICS EXPRESS Edwards, E. H., Audet, R. M., Fei, E. T., Claussen, S. A., Schaevitz, R. K., Tasyurek, E., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 20 (28): 29164-29173

    Abstract

    We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.

    View details for Web of Science ID 000314914500005

    View details for PubMedID 23388742

  • Continuous sensing of tumor-targeted molecular probes with a vertical cavity surface emitting laser-based biosensor JOURNAL OF BIOMEDICAL OPTICS Parashurama, N., O'Sullivan, T. D., de la Zerda, A., El Kalassi, P., Cho, S., Liu, H., Teed, R., Levy, H., Rosenberg, J., Cheng, Z., Levi, O., Harris, J. S., Gambhir, S. S. 2012; 17 (11)

    Abstract

    Molecular optical imaging is a widespread technique for interrogating molecular events in living subjects. However, current approaches preclude long-term, continuous measurements in awake, mobile subjects, a strategy crucial in several medical conditions. Consequently, we designed a novel, lightweight miniature biosensor for in vivo continuous optical sensing. The biosensor contains an enclosed vertical-cavity surface-emitting semiconductor laser and an adjacent pair of near-infrared optically filtered detectors. We employed two sensors (dual sensing) to simultaneously interrogate normal and diseased tumor sites. Having established the sensors are precise with phantom and in vivo studies, we performed dual, continuous sensing in tumor (human glioblastoma cells) bearing mice using the targeted molecular probe cRGD-Cy5.5, which targets αVβ3 cell surface integrins in both tumor neovasculature and tumor. The sensors capture the dynamic time-activity curve of the targeted molecular probe. The average tumor to background ratio after signal calibration for cRGD-Cy5.5 injection is approximately 2.43±0.95 at 1 h and 3.64±1.38 at 2 h (N=5 mice), consistent with data obtained with a cooled charge coupled device camera. We conclude that our novel, portable, precise biosensor can be used to evaluate both kinetics and steady state levels of molecular probes in various disease applications.

    View details for DOI 10.1117/1.JBO.17.11.117004

    View details for Web of Science ID 000314502700046

    View details for PubMedID 23123976

    View details for PubMedCentralID PMC3595658

  • Electrically Driven Photonic Crystal Nanocavity Devices IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Shambat, G., Ellis, B., Petykiewicz, J., Mayer, M. A., Majumdar, A., Sarmiento, T., Harris, J. S., Haller, E. E., Vuckovic, J. 2012; 18 (6): 1700-1710
  • Optical Absorption Enhancement in Freestanding GaAs Thin Film Nanopyramid Arrays ADVANCED ENERGY MATERIALS Liang, D., Huo, Y., Kang, Y., Wang, K. X., Gu, A., Tan, M., Yu, Z., Li, S., Jia, J., Bao, X., Wang, S., Yao, Y., Wong, H. P., Fan, S., Cui, Y., Harris, J. S. 2012; 2 (10): 1254-1260
  • Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications OPTICAL MATERIALS EXPRESS Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 2 (10): 1336-1342
  • Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., Kim, H., Sun, M., Park, B., Harris, J. S. 2012; 12 (3): 370-376
  • Antenna electrodes for controlling electroluminescence NATURE COMMUNICATIONS Huang, K. C., Seo, M., Huo, Y., Sarmiento, T., Harris, J. S., Brongersma, M. L. 2012; 3

    Abstract

    Optical antennas can control the emission from quantum emitters by modifying the local density of optical states via the Purcell effect. A variety of nanometallic antennas have been implemented to enhance and control key photoluminescence properties, such as the decay rate, directionality and polarization. However, their implementation in active devices has been hampered by the need to precisely place emitters near an antenna and to efficiently excite them electrically. Here we illustrate a design methodology for antenna electrodes that for the first time facilitates simultaneous operation as electrodes for current injection and as antennas capable of optically manipulating the electroluminescence. We show that by confining the electrically excited carriers to the vicinity of antenna electrodes and maximizing the optical coupling of the emission to a single, well-defined antenna mode, their electroluminescence can be effectively controlled. This work spurs the development of densely integrated, electrically driven light sources with tailored emission properties.

    View details for DOI 10.1038/ncomms1985

    View details for Web of Science ID 000308801100021

    View details for PubMedID 22893129

  • Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements 18th American Conference on Crystal Growth and Epitaxy (ACCGE)/15th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) Tassev, V., Snure, M., Peterson, R., Bedford, R., Bliss, D., Bryant, G., Mann, M., Goodhue, W., Vangala, S., Termkoa, K., Lin, A., Harris, J. S., Fejer, M. M., Yapp, C., Tetlak, S. ELSEVIER SCIENCE BV. 2012: 72–77
  • Photovoltaic retinal prosthesis: implant fabrication and performance JOURNAL OF NEURAL ENGINEERING Wang, L., Mathieson, K., Kamins, T. I., Loudin, J. D., Galambos, L., Goetz, G., Sher, A., Mandel, Y., Huie, P., Lavinsky, D., Harris, J. S., Palanker, D. V. 2012; 9 (4)

    Abstract

    The objective of this work is to develop and test a photovoltaic retinal prosthesis for restoring sight to patients blinded by degenerative retinal diseases. A silicon photodiode array for subretinal stimulation has been fabricated by a silicon-integrated-circuit/MEMS process. Each pixel in the two-dimensional array contains three series-connected photodiodes, which photovoltaically convert pulsed near-infrared light into bi-phasic current to stimulate nearby retinal neurons without wired power connections. The device thickness is chosen to be 30 µm to absorb a significant portion of light while still being thin enough for subretinal implantation. Active and return electrodes confine current near each pixel and are sputter coated with iridium oxide to enhance charge injection levels and provide a stable neural interface. Pixels are separated by 5 µm wide trenches to electrically isolate them and to allow nutrient diffusion through the device. Three sizes of pixels (280, 140 and 70 µm) with active electrodes of 80, 40 and 20 µm diameter were fabricated. The turn-on voltages of the one-diode, two-series-connected diode and three-series-connected diode structures are approximately 0.6, 1.2 and 1.8 V, respectively. The measured photo-responsivity per diode at 880 nm wavelength is ∼0.36 A W(-1), at zero voltage bias and scales with the exposed silicon area. For all three pixel sizes, the reverse-bias dark current is sufficiently low (<100 pA) for our application. Pixels of all three sizes reliably elicit retinal responses at safe near-infrared light irradiances, with good acceptance of the photodiode array in the subretinal space. The fabricated device delivers efficient retinal stimulation at safe near-infrared light irradiances without any wired power connections, which greatly simplifies the implantation procedure. Presence of the return electrodes in each pixel helps to localize the current, and thereby improves resolution.

    View details for DOI 10.1088/1741-2560/9/4/046014

    View details for Web of Science ID 000306759600027

    View details for PubMedID 22791690

    View details for PubMedCentralID PMC3419261

  • Widely tunable midinfrared difference frequency generation in orientation-patterned GaAs pumped with a femtosecond Tm-fiber system OPTICS LETTERS Phillips, C. R., Jiang, J., Mohr, C., Lin, A. C., Langrock, C., Snure, M., Bliss, D., Zhu, M., Hartl, I., Harris, J. S., Fermann, M. E., Fejer, M. M. 2012; 37 (14): 2928-2930

    Abstract

    We demonstrate a midinfrared source tunable from 6.7 to 12.7 μm via difference frequency generation (DFG) in orientation-patterned GaAs, with 1.3 mW average output power. The input pulses are generated via Raman self-frequency shift of a femtosecond Tm-doped-fiber laser system in a fluoride fiber. We numerically model the DFG process and show good agreement between simulations and experiments. We use this numerical model to show an improved design using longer pump pulses.

    View details for Web of Science ID 000306709900053

    View details for PubMedID 22825181

  • Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by Gamma-valley transport OPTICS EXPRESS Cho, S., Park, B., Yang, C., Cheung, S., Yoon, E., Kamins, T. I., Ben Yoo, S. J., Harris, J. S. 2012; 20 (14): 14921-14927

    Abstract

    Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Γ-valley of germanium.

    View details for Web of Science ID 000306176100028

  • Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by G-valley transport. Optics express Cho, S., Park, B., Yang, C., Cheung, S., Yoon, E., Kamins, T. I., Yoo, S. J., Harris, J. S. 2012; 20 (14): 14921-14927

    Abstract

    Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Γ-valley of germanium.

    View details for DOI 10.1364/OE.20.014921

    View details for PubMedID 22772186

  • Photovoltaic retinal prosthesis with high pixel density NATURE PHOTONICS Mathieson, K., Loudin, J., Goetz, G., Huie, P., Wang, L., Kamins, T. I., Galambos, L., Smith, R., Harris, J. S., Sher, A., Palanker, D. 2012; 6 (6): 391-397

    Abstract

    Retinal degenerative diseases lead to blindness due to loss of the "image capturing" photoreceptors, while neurons in the "image processing" inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm(2), two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 μm bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density.

    View details for DOI 10.1038/NPHOTON.2012.104

    View details for Web of Science ID 000304598200017

    View details for PubMedCentralID PMC3462820

  • Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Lee, J. S., Cho, S., Park, B., Harris, J. S., Kang, I. M. 2012; 12 (2): 230-239
  • A photonic crystal cavity-optical fiber tip nanoparticle sensor for biomedical applications APPLIED PHYSICS LETTERS Shambat, G., Kothapalli, S. R., Khurana, A., Provine, J., Sarmiento, T., Cheng, K., Cheng, Z., Harris, J., Daldrup-Link, H., Gambhir, S. S., Vuckovic, J. 2012; 100 (21)

    View details for DOI 10.1063/1.4719520

    View details for Web of Science ID 000304489900085

  • Structural and optical characterization of SixGe1-x-ySny alloys grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 100 (14)

    View details for DOI 10.1063/1.3701732

    View details for Web of Science ID 000302567800026

  • Low-temperature growth of Ge1-xSnx thin films with strain control by molecular beam epitaxy THIN SOLID FILMS Lin, H., Chen, R., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 520 (11): 3927-3930
  • Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides IEEE PHOTONICS TECHNOLOGY LETTERS Ren, S., Rong, Y., Claussen, S. A., Schaevitz, R. K., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 24 (6): 461-463
  • Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopy APPLIED PHYSICS LETTERS Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 100 (10)

    View details for DOI 10.1063/1.3692735

    View details for Web of Science ID 000301655500038

  • Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells IEEE JOURNAL OF QUANTUM ELECTRONICS Schaevitz, R. K., Edwards, E. H., Roth, J. E., Fei, E. T., Rong, Y., Wahl, P., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 48 (2): 187-197
  • Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance IEICE ELECTRONICS EXPRESS Cho, S., Kim, H., Sun, M., Kang, I. M., Park, B., Harris, J. S. 2012; 9 (9): 828-833

    View details for DOI 10.1587/elex.9.828

    View details for Web of Science ID 000305324600003

  • Photovoltaic Retinal Prosthesis with High Pixel Density. Nature photonics Mathieson, K., Loudin, J., Goetz, G., Huie, P., Wang, L., Kamins, T. I., Galambos, L., Smith, R., Harris, J. S., Sher, A., Palanker, D. 2012; 6 (6): 391–97

    Abstract

    Retinal degenerative diseases lead to blindness due to loss of the "image capturing" photoreceptors, while neurons in the "image processing" inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm(2), two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 μm bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density.

    View details for PubMedID 23049619

  • Frequency Response of a Common-Source (CS) Amplifier Embedding Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor (TFET) Harris, J., S., Hyungjin, S., Cho, Byung-Gook, James 2012
  • All-epitaxial Growth of Orientation-patterned Gallium Phosphide (OPGaP) Tech. Dig. OSA Lasers, Sources, and Related Photonic Devices, ITh5B.5-1-3 Schunemann, P., G., Mohnkern, L., Vera, A., Yang, X., S., Lin, A., C., Harris, J., S 2012
  • Simulation Study on Process Conditions for High-Speed Silicon Photodetector and Quantum-Well Structuring for Increased Number of Wavelength Discriminations Cho, S., Kim, H., Sun, M., C., Kamins, T., I., Park, B., G., Harris Jr., J., S. 2012
  • Design Consideration for Heterojunction P-Type Tunneling Field-Effect Transistor with Narrow-Bandgap Source Material Harris, J., S., Hyun, S., Cho, Byung-Gook, W., Kim, James 2012
  • Room Temperature Photoluminescence from Ge/SiGe Quantum Well Structure in Microdisk Resonator Harris, J., S., Chen, X., Huo, Y., Fei, E., Shambat, G., Liu, X. 2012
  • Tunable Mid-Infrared Source Based on Difference Frequency Generation of a Femtosecond Tm-fiber System in Orientation Patterned GaAs Conference on Lasers and Electro-Optics (CLEO) Phillips, C. R., Langrock, C., Fejer, M. M., Jiang, J., Hartl, I., Fermann, M. E., Lin, A., Harris, J. S., Snure, M., Bliss, D., Zhu, M. IEEE. 2012
  • MBE growth of tensile-strained Ge quantum wells and quantum dots Front. Optoelectron. Chin. Online Huo, Y., Lin, H., Chen, R., Rong, Y., Kamins, T., I., Harris, J., S. 2012
  • 1550-nm Germanium Light-Emitting Diode by Momentum Conservation Transport Harris, J., S., Cho, S., Cheung, S., Yang, C., Kim, H., Yoon, E. 2012
  • Monte Carlo Simulations of the Influence of Localization Centres on Carrier Dynamics in GaInNAs Quantum Wells Acta Physica Polonica Harris, J., S., Baranowski, M., Kudrawiec, R., Latkowska, M., Syperek, M., Misiewicz, J. 2012; 6 (122): 1022-1025
  • Temperature dependence of Ge quantum well light emitting diode on Si substrate Harris, J., S., Fei, E., T., Yijie Huo, E., T., Chen, X., Miller, G., Zang, K. 2012
  • GaInNAs(Sb) Long-Wavelength VCSELs VCSELs, Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers Harris, J., S., Bae, H. edited by Michalzik, R. Springer-Verlag Berlin Heidelberg. 2012: 1–25
  • Optical Fiber Tips Functionalized with Semiconductor Photonic Crystal Cavities Conference on Lasers and Electro-Optics (CLEO) Shambat, G., Provine, J., Rivoire, K., Sarmiento, T., Harris, J., Vuckovic, J. IEEE. 2012
  • Photonic Crystal Nanocavity Lasers and Modulators 25th IEEE Photonics Conference (IPC) Vuckovic, J., Shambat, G., Petykiewicz, J., Ellis, B., Majumdar, A., Sarmiento, T., Mayer, M., Harris, J., Haller, E. IEEE. 2012: 459–460
  • A New Approach to Ge Lasers with Low Pump Power 25th IEEE Photonics Conference (IPC) Chen, X., Huo, Y., Fei, E. T., Shambat, G., Zang, K., Liu, X., Chen, Y., Kamins, T. I., Vuckovic, J., Harris, J. S. IEEE. 2012: 60–61
  • Ultra-Low Threshold and High Speed Electrically Driven Photonic Crystal Nanocavity Lasers and LEDs Conference on Lasers and Electro-Optics (CLEO) Vuckovic, J., Ellis, B., Shambat, G., Petykiewicz, J., Majumdar, A., Sarmiento, T., Mayer, M., Harris, J., Haller, E. IEEE. 2012
  • Ultrafast Direct Modulation of a Single-Mode Photonic Crystal Nanocavity Light-Emitting Diode Conference on Lasers and Electro-Optics (CLEO) Shambat, G., Ellis, B., Majumdar, A., Petykiewicz, J., Mayer, M., Sarmiento, T., Harris, J., Haller, E., Vuckovic, J. IEEE. 2012
  • Photovoltaic retinal prosthesis for restoring sight to the blind: implant design and fabrication Conference on Micromachining and Microfabrication Process Technology XVII Wang, L., Mathieson, K., Kamins, T. I., Loudin, J., Galambos, L., Harris, J. S., Palanker, D. SPIE-INT SOC OPTICAL ENGINEERING. 2012

    View details for DOI 10.1117/12.909104

    View details for Web of Science ID 000302640000004

  • Light Emission in Ge Quantum Wells Conference on Lasers and Electro-Optics (CLEO) Fei, E. T., Huo, Y., Shambat, G., Chen, X., Liu, X., Claussen, S. A., Edwards, E. H., Kamins, T. I., Miller, D. A., Vuckovic, J., Harris, J. S. IEEE. 2012
  • Optical properties of Ge1-zSnz/SixGe1-x-ySny heterostructures 25th IEEE Photonics Conference (IPC) Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. IEEE. 2012: 919–920
  • GaAs thin film nanostructure arrays for III-V solar cell applications Conference on Photonic and Phononic Properties of Engineered Nanostructures II Liang, D., Kang, Y., Huo, Y., Wang, K. X., Gu, A., Tan, M., Yu, Z., Lia, S., Jia, J., Bao, X., Wang, S., Yao, Y., Fan, S., Cui, Y., Harris, J. SPIE-INT SOC OPTICAL ENGINEERING. 2012

    View details for DOI 10.1117/12.909743

    View details for Web of Science ID 000302582400036

  • Electrically driven photonic crystal nanocavity lasers, LEDs, and modulators Conference on Novel In-Plane Semiconductor Lasers XI Shambat, G., Ellis, B., Mayer, M., Majumdar, A., Petykiewicz, J., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. SPIE-INT SOC OPTICAL ENGINEERING. 2012

    View details for DOI 10.1117/12.907432

    View details for Web of Science ID 000305332300003

  • Selective-Area Growth of Ge and Ge/SiGe Quantum Wells in 3 mu m Silicon-on-Insulator Waveguides Conference on Lasers and Electro-Optics (CLEO) Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. IEEE. 2012
  • Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation APPLIED PHYSICS LETTERS Cho, S., Kang, I. M., Kamins, T. I., Park, B., Harris, J. S. 2011; 99 (24)

    View details for DOI 10.1063/1.3670325

    View details for Web of Science ID 000298254200065

  • Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors IEEE TRANSACTIONS ON ELECTRON DEVICES Cho, S., Lee, J. S., Kim, K. R., Park, B., Harris, J. S., Kang, I. M. 2011; 58 (12): 4164-4171
  • Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell JOURNAL OF CRYSTAL GROWTH Tan, K. H., Wicaksono, S., Loke, W. K., Li, D., Yoon, S. F., Fitzgerald, E. A., Ringel, S. A., Harris, J. S. 2011; 335 (1): 66-69
  • Optical fiber tips functionalized with semiconductor photonic crystal cavities APPLIED PHYSICS LETTERS Shambat, G., Provine, J., Rivoire, K., Sarmiento, T., Harris, J., Vuckovic, J. 2011; 99 (19)

    View details for DOI 10.1063/1.3660278

    View details for Web of Science ID 000297030200002

  • Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode NATURE COMMUNICATIONS Shambat, G., Ellis, B., Majumdar, A., Petykiewicz, J., Mayer, M. A., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011; 2

    Abstract

    Low-power and electrically controlled optical sources are vital for next generation optical interconnect systems to meet strict energy demands. Current optical transmitters consisting of high-threshold lasers plus external modulators consume far too much power to be competitive with future electrical interconnects. Here we demonstrate a directly modulated photonic crystal nanocavity light-emitting diode (LED) with 10 GHz modulation speed and less than 1 fJ per bit energy of operation, which is orders of magnitude lower than previous solutions. The device is electrically controlled and operates at room temperature, while the high modulation speed results from the fast relaxation of the quantum dots used as the active material. By virtue of possessing a small mode volume, our LED is intrinsically single mode and, therefore, useful for communicating information over a single narrowband channel. The demonstrated device is a major step forward in providing practical low-power and integrable sources for on-chip photonics.

    View details for DOI 10.1038/ncomms1543

    View details for Web of Science ID 000297686500026

    View details for PubMedID 22086339

  • Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Chen, R., Lin, H., Huo, Y., Hitzman, C., Kamins, T. I., Harris, J. S. 2011; 99 (18)

    View details for DOI 10.1063/1.3658632

    View details for Web of Science ID 000296659400025

  • Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator With 20-nm Free-Spectral Range IEEE PHOTONICS TECHNOLOGY LETTERS Cho, S., Chen, R., Koo, S., Shambat, G., Lin, H., Park, N., Vuckovic, J., Kamins, T. I., Park, B., Harris, J. S. 2011; 23 (20)
  • Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., Sun, M., Kim, G., Kamins, T. I., Park, B., Harris, J. S. 2011; 11 (3): 182-189
  • Nanobeam photonic crystal cavity light-emitting diodes APPLIED PHYSICS LETTERS Shambat, G., Ellis, B., Petykiewicz, J., Mayer, M. A., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011; 99 (7)

    View details for DOI 10.1063/1.3625432

    View details for Web of Science ID 000294208900005

  • Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3 JAPANESE JOURNAL OF APPLIED PHYSICS Ueda, T., Yuri, M., Harris, J. S. 2011; 50 (8)
  • Raman study of strained Ge1-xSnx alloys APPLIED PHYSICS LETTERS Lin, H., Chen, R., Huo, Y., Kamins, T. I., Harris, J. S. 2011; 98 (26)

    View details for DOI 10.1063/1.3606384

    View details for Web of Science ID 000292335700027

  • Optical Gain in GaInNAs and GaInNAsSb Quantum Wells IEEE JOURNAL OF QUANTUM ELECTRONICS Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., Tansu, N., Mawst, L. J. 2011; 47 (6): 870-877
  • X-ray diffraction analysis of step-graded InxGa1-xAs buffer layers grown by molecular beam epitaxy 16th International Conference on Molecular Beam Epitaxy (ICMBE) Lin, H., Huo, Y., Rong, Y., Chen, R., Kamins, T. I., Harris, J. S. ELSEVIER SCIENCE BV. 2011: 17–20
  • Two-dimensional III-V nucleation on Si for nonlinear optics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Lin, A. C., Harris, J. S., Fejer, M. M. 2011; 29 (3)

    View details for DOI 10.1116/1.3562191

    View details for Web of Science ID 000291111300056

  • Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser NATURE PHOTONICS Ellis, B., Mayer, M. A., Shambat, G., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011; 5 (5): 297-300
  • Experimental demonstration of two methods for controlling the group delay in a system with photonic-crystal resonators coupled to a waveguide OPTICS LETTERS Huo, Y., Sandhu, S., Pan, J., Stuhrmann, N., Povinelli, M. L., Kahn, J. M., Harris, J. S., Fejer, M. M., Fan, S. 2011; 36 (8): 1482-1484

    Abstract

    We measure the group delay in an on-chip photonic-crystal device with two resonators side coupled to a waveguide. We demonstrate that such a group delay can be controlled by tuning either the propagation phase of the waveguide or the frequency of the resonators.

    View details for Web of Science ID 000290034500059

    View details for PubMedID 21499397

  • Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition APPLIED PHYSICS LETTERS Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2011; 98 (15)

    View details for DOI 10.1063/1.3574912

    View details for Web of Science ID 000289580800008

  • Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Huo, Y., Lin, H., Chen, R., Makarova, M., Rong, Y., Li, M., Kamins, T. I., Vuckovic, J., Harris, J. S. 2011; 98 (1)

    View details for DOI 10.1063/1.3534785

    View details for Web of Science ID 000286009800012

  • Photovoltaic Retinal Prosthesis Conference on Ophthalmic Technologies XXI Loudin, J., Mathieson, K., Kamins, T., Wang, L., Galambos, L., Huie, P., Sher, A., Harris, J., Palanker, D. SPIE-INT SOC OPTICAL ENGINEERING. 2011

    View details for DOI 10.1117/12.876560

    View details for Web of Science ID 000297590500028

  • MBE growth of tensile-strained Ge quantum wells and quantum dots Front. Optoelectron. Huo, Y., Lin, H., Chen, R., Rong, Y., Kamins, T., I., Harris, J., S. 2011

    View details for DOI 10.1007 /s12200-012-0193

  • Experimental demonstration of two methods for controlling the group delay in a system with photonic-crystal resonators coupled to a waveguide Opt. Lett. Harris, J., S., Huo, Y., Sandhu, S., Pan, J., Stuhrmann, N., Povinelli, M. 2011; 4 (36): 1482-1483
  • Small-Signal Modeling of Gate-All-Around (GAA) Junctionless MOSFETs for Sub-millimeter Wave Application Cho, S., Lee, J., Sung, Kang, I., Man, Park, B., G., Harris, J., S. 2011
  • Silicon-Compatible Bulk-Type Compound Junctionless Field-Effect Transistor Harris, J., S., Se, S., Cho, Byung-Gook, H., Park, James 2011
  • Direct-Bandgap Photoluminescence of MBE-grown Ge1-xSnx Alloys Chen, R., Huo, Y., Lin, H., Hitzman, C., J., Kamins, T., I., Harris, J., S. 2011
  • Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation Applied Phys. Lett. Cho, S., Kang, I. M., Kamins, T., I., Park, B., G., Harris Jr., J., S. 2011; 24 (99): 243505-1-4
  • Ge quantum well resonator modulators Schaevitz, R., K., Rong, Y., Claussen, S., A., Kamins, T., I., Vuckovic, J., Harris Jr., J., S. 2011
  • Fabrication and Characterization of Whispering Gallery Mode (WGM) Microdisk Resonator Based on Epitaxially Grown GeSn Harris, J., S., Cho, S., Chen, R., Lin, H., Huo, Y., Shambat, G. 2011
  • Design Optimization of Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) of Ge-AlxGa1-xAs System for High Performance Logic Technology Cho, S., Sun, M., C., Kim, G., Park, B., G., Harris, J., S. 2011
  • Surface Roughness Effect on Q-Factor of Ge Whispering Gallery Mode Microdisk Resonator Harris, J., S., Cho, S., Koo, S., Yoo, K., Pickett, E., R., Park, N. 2011
  • Low power consumption electrically pumped photonic crystal membrane devices Conference on Active Photonic Materials IV Ellis, B., Shambat, G., Mayer, M., Petykiewicz, J., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. SPIE-INT SOC OPTICAL ENGINEERING. 2011

    View details for DOI 10.1117/12.894479

    View details for Web of Science ID 000295963400021

  • A novel nano-structured GaAs solar cell Harris, J., S., Liang, D., Gu, A., Huo, Y., Yan, J., Li, S. 2011
  • A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides Kamins, T., I., Harris, J., S., B., D., A. 2011
  • Fast epitaxial growth of thick quasi-phase matched GaP for applications in the MIR and THz: determination of the optimal substrate and pattern orientation 36th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Tassev, V., Snure, M., Peterson, R., Bliss, D., Bryant, G., Goodhue, W., Vangala, S., Termkoa, K., Lin, A., Harris, J. S., Fejer, M. M., Yapp, C. IEEE. 2011
  • Simple Electroabsorption Calculator for Germanium Quantum Well Devices Audet, R., M., Rong, Y., Claussen, S., A., Tasyurek, E., Roth, J., E., Harris Jr., J., S. 2011
  • Optical gain in GaInNAs and GaInNAsSb quantum wells Conference on Lasers and Electro-Optics (CLEO) Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., Tansu, N., Mawst, L. J. IEEE. 2011
  • Integrated photonic structures for parallel fluorescence and refractive index biosensing Conference on Photonic Microdevices/Microstructures for Sensing III Lee, M. M., O'Sullivan, T. D., Cerruto, A., Liu, V., Zhang, J., Levi, O., Lee, H., Brueck, S. R., Fan, S., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2011

    View details for DOI 10.1117/12.884228

    View details for Web of Science ID 000294154700005

  • Emerging applications for vertical cavity surface emitting lasers SEMICONDUCTOR SCIENCE AND TECHNOLOGY Harris, J. S., O'Sullivan, T., Sarmiento, T., Lee, M. M., Vo, S. 2011; 26 (1)
  • Ultra-low Threshold Electrically Pumped Quantum Dot Photonic Crystal Nanocavity Laser Conference on Lasers and Electro-Optics (CLEO) Ellis, B., Mayer, M. A., Shambat, G., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. IEEE. 2011
  • GeSn Technology: Extending the Ge Electronics Roadmap IEEE International Electron Devices Meeting (IEDM) Gupta, S., Chen, R., Magyari-Kope, B., Lin, H., Yang, B., Nainani, A., Nishi, Y., Harris, J. S., Saraswat, K. C. IEEE. 2011
  • Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., O'uchi, S., Endo, K., Kim, S. W., Son, Y., Kang, I. M., Masahara, M., Harris, J. S., Park, B. 2010; 10 (4): 265-275
  • Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes APPLIED PHYSICS LETTERS Seo, D., Jeon, S., Seo, S., Song, I., Kim, C., Park, S., Harris, J. S., Chung, U. 2010; 97 (17)

    View details for DOI 10.1063/1.3490245

    View details for Web of Science ID 000284233600027

  • Tuning the coherent interaction in an on-chip photonic-crystal waveguide-resonator system APPLIED PHYSICS LETTERS Pan, J., Huo, Y., Sandhu, S., Stuhrmann, N., Povinelli, M. L., Harris, J. S., Fejer, M. M., Fan, S. 2010; 97 (10)

    View details for DOI 10.1063/1.3486686

    View details for Web of Science ID 000282478800002

  • Implantable semiconductor biosensor for continuous in vivo sensing of far-red fluorescent molecules OPTICS EXPRESS O'Sullivan, T., Munro, E. A., Parashurama, N., Conca, C., Gambhir, S. S., Harris, J. S., Levi, O. 2010; 18 (12): 12513-12525

    Abstract

    We have fabricated miniature implantable fluorescence sensors for continuous fluorescence sensing applications in living subjects. These monolithically integrated GaAs-based sensors incorporate a 675 nm vertical-cavity surface-emitting laser (VCSEL), a GaAs PIN photodiode, and a fluorescence emission filter. We demonstrate high detection sensitivity for Cy5.5 far-red dye (50 nanoMolar) in living tissue, limited by the intrinsic background autofluorescence. These low cost, sensitive and scalable sensors are promising for long-term continuous monitoring of molecular dynamics for biomedical studies in freely moving animals.

    View details for Web of Science ID 000278527700052

    View details for PubMedID 20588377

  • Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction APPLIED PHYSICS LETTERS Ellis, B., Sarmiento, T., Mayer, M., Zhang, B., Harris, J., Haller, E., Vuckovic, J. 2010; 96 (18)

    View details for DOI 10.1063/1.3425663

    View details for Web of Science ID 000277422000003

  • Nanobeam photonic crystal cavity quantum dot laser OPTICS EXPRESS Gong, Y., Ellis, B., Shambat, G., Sarmiento, T., Harris, J. S., Vuckovic, J. 2010; 18 (9): 8781-8789

    Abstract

    The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is calculated. We study the cavity lasers under both 780 nm and 980 nm pump, finding thresholds as low as 0.3 microW and 19 microW for the two pump wavelengths, respectively. Finally, the nanobeam cavity laser wavelengths are tuned by up to 7 nm by employing a fiber taper in near proximity to the cavities. The fiber taper is used both to efficiently pump the cavity and collect the cavity emission.

    View details for Web of Science ID 000277082200006

    View details for PubMedID 20588722

  • Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs substrates 17th Amer Conference on Crystal Growth and Epitaxy/14th United States Biennial Workshop on Organometallic Vapor Phase Epitaxy/6th Inter Workshop on Modeling in Crystal Growth Singh, N. B., Kanner, G. S., Berghmans, A., Kahler, D., Lin, A., Wagner, B., Kelley, S. P., KNUTESON, D. J., HOLMSTROM, R., Schepler, K. L., Peterson, R., Fejer, M. M., Harris, J. S. ELSEVIER SCIENCE BV. 2010: 1142–45
  • Extracting systematic factors in a continuous-time credit migration model JOURNAL OF CREDIT RISK Thompson, H., Harris, J. 2010; 6 (1): 31-53
  • Photoreflectance and photoluminescence study of GaInNAsSb layers lattice matched to InP JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Sarmiento, T., Poloczek, P., Misiewicz, J., Harris, J. S. 2010; 107 (4)

    View details for DOI 10.1063/1.3280030

    View details for Web of Science ID 000275028900039

  • DESIGN AND GROWTH OF III-V NANOWIRE SOLAR CELL ARRAYS ON LOW COST SUBSTRATES 35th IEEE Photovoltaic Specialists Conference Gu, A., Huo, Y., Hu, S., Sarmiento, T., Pickett, E., Liang, D., Li, S., Lin, A., Thombare, S., Yu, Z., Fan, S., McIntyre, P., Cui, Y., Harris, J. IEEE. 2010: 2034–2037
  • Simple electroabsorption model for germanium quantum well devices Harris, J., S., Schaevitz, R., K., Edwards, E., H., Audet, R., M., Rong, Y., Ren 2010
  • Simple electroabsorption model for silicongermanium/germanium quantum well devices Harris, J., S., Schaevitz, R., K., Roth, J., E., Edwards, E., H., Audet, R., M., Claussen 2010
  • Fabrication of Prototype Magnetic Coupled Spin-torque Devices for Non-volatile Logic Applications Leem, L., Harris, J., S., Rettner, C., Hughes, B., Jiang, X., Yang, S., H. 2010
  • Experimental demonstration of an all-optical analogue to the superradiance effect in an on-chip photonic crystal resonator system Phys. Rev. Pan, J., Sandhu, S., Huo, Y., Stuhrmann, N., Povinelli, M., Harris, J., S. 2010; 4 (B81): 041101-1-3
  • Multi-scale Simulations of Partially Unzipped CNT Hetero-junction Tunneling Field Effect Transistor International Electron Devices Meeting (IEDM) Leem, L., Srivastava, A., Li, S., Magyari-Koepe, B., Iannaccone, G., Harris, J. S., Fiori, G. IEEE. 2010
  • Integration of Germanium Quantum Well Structures on a Silicon-on-Insulator Waveguide Platform for Optical Modulator Applications 7th IEEE International Conference on Group IV Photonics (GFP) Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. IEEE. 2010: 60–62
  • MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift 7th IEEE International Conference on Group IV Photonics (GFP) Huo, Y., Chen, R., Lin, H., Kamins, T. I., Harris, J. S. IEEE. 2010: 344–346
  • Electrically Pumped Photonic Crystal Nanocavities Using a Laterally Doped p-i-n Junction Conference on Lasers and Electro-Optics (CLEO)/Quantum Electronics and Laser Science Conference (QELS) Ellis, B., Sarmiento, T., Mayer, M., Stone, P., Beeman, J., Zhang, B., Dubon, O., Haller, E., Yamamoto, Y., Harris, J., Vuckovic, J. IEEE. 2010
  • Fabrication of an integrated 670nm VCSEL-based sensor for miniaturized fluorescence sensing Conference on Vertical-Cavity Surface-Emitting Lasers XIV O'Sullivan, T. D., Munro, E., Harris, J. S., Levi, O. SPIE-INT SOC OPTICAL ENGINEERING. 2010

    View details for DOI 10.1117/12.842096

    View details for Web of Science ID 000283918300013

  • Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Rong, Y., Ge, Y., Huo, Y., Fiorentino, M., Tan, M. R., Kamins, T. I., Ochalski, T. J., Huyet, G., Harris, J. S. 2010; 16 (1): 85-92
  • Si-Ge Surface-normal Asymmetric Fabry-Perot Quantum-confined Stark Effect Electroabsorption Modulator 23rd Annual Meeting of the IEEE Photonics-Society Edwards, E. H., Audet, R. M., Rong, Y., Claussen, S. A., Schaevitz, R. K., Tasyuerek, E., Ren, S., Kamins, T. I., Harris, J. S., Miller, D. A., Dosunmu, O. I., Uenlue, M. S. IEEE. 2010: 514–515
  • Experimental demonstration of an all-optical analogue to the superradiance effect in an on-chip photonic crystal resonator system PHYSICAL REVIEW B Pan, J., Sandhu, S., Huo, Y., Stuhrmann, N., Povinelli, M. L., Harris, J. S., Fejer, M. M., Fan, S. 2010; 81 (4)
  • FACETING AND DISORDER IN NANOWIRE SOLAR CELL ARRAYS 35th IEEE Photovoltaic Specialists Conference Pickett, E., Gu, A., Huo, Y., Garnett, E., Hu, S., Sarmiento, T., Thombare, S., Liang, D., Li, S., Cui, Y., McGehee, M., McIntyre, P., Harris, J. IEEE. 2010: 1848–1853
  • Nonradiative recombination in 1.56 mu m GaInNAsSb/GaNAs quantum-well lasers APPLIED PHYSICS LETTERS Ferguson, J. W., Smowton, P. M., Blood, P., Bae, H., Sarmiento, T., Harris, J. S. 2009; 95 (23)

    View details for DOI 10.1063/1.3271182

    View details for Web of Science ID 000272627700004

  • Design and Analysis of CMOS-Controlled Tunable Photodetectors for Multiwavelength Discrimination JOURNAL OF LIGHTWAVE TECHNOLOGY Chen, R., Fu, J., Miller, D. A., Harris, J. S. 2009; 27 (23): 5451-5460
  • Optical probes of orientation-patterned ZnSe quasi-phase-matched devices OPTICAL ENGINEERING Kanner, G. S., Marable, M. L., Singh, N. B., Berghmans, A., Kahler, D., Wagner, B., Lin, A., Fejer, M. M., Harris, J. S., Schepler, K. L. 2009; 48 (11)

    View details for DOI 10.1117/1.3257266

    View details for Web of Science ID 000273210600011

  • GaAs-based 1.53 mu m GaInNAsSb vertical cavity surface emitting lasers ELECTRONICS LETTERS Sarmiento, T., Bae, H. P., O'Sullivan, T. D., Harris, J. S. 2009; 45 (19): 978-U28
  • Electrically controlled modulation in a photonic crystal nanocavity OPTICS EXPRESS Englund, D., Ellis, B., Edwards, E., Sarmiento, T., Harris, J. S., Miller, D. A., Vuckovic, J. 2009; 17 (18): 15409-15419

    Abstract

    We describe a compact modulator based on a photonic crystal nanocavity whose resonance is electrically controlled through an integrated p-i-n junction. The sub-micron size of the nanocavity promises very low capacitance, high bandwidth, and efficient on-chip integration in optical interconnects.

    View details for PubMedID 19724539

  • Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells SEMICONDUCTOR SCIENCE AND TECHNOLOGY Mintairov, A. M., Sun, K., Merz, J. L., Yuen, H., Bank, S., Wistey, M., Harris, J. S., PEAKE, G., Egorov, A., Ustinov, V., Kudrawiec, R., Misiewicz, J. 2009; 24 (7)
  • Magnetic coupled spin-torque devices for nonvolatile logic applications 53rd Annual Conference on Magnetism and Magnetic Materials Leem, L., Harris, J. S. AMER INST PHYSICS. 2009

    View details for DOI 10.1063/1.3056141

    View details for Web of Science ID 000266633500495

  • High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication JOURNAL OF CRYSTAL GROWTH Choi, D., Harris, J. S., Kim, E., McIntyre, P. C., Cagnon, J., Stemmer, S. 2009; 311 (7): 1962-1971
  • QUaD: A HIGH-RESOLUTION COSMIC MICROWAVE BACKGROUND POLARIMETER ASTROPHYSICAL JOURNAL Hinderks, J. R., Ade, P., Bock, J., Bowden, M., Brown, M. L., Cahill, G., Carlstrom, J. E., Castro, P. G., Church, S., Culverhouse, T., Friedman, R., Ganga, K., Gear, W. K., Gupta, S., Harris, J., Haynes, V., Keating, G., Kovac, J., Kirby, E., Lange, A. E., Leitch, E., Mallie, O. E., Melhuish, S., Memari, Y., Murphy, A., Orlando, A., Schwarz, R., Sullivan, C. O., Piccirillo, L., Pryke, C., Rajguru, N., Rusholme, B., Taylor, A. N., Thompson, K. L., Tucker, C., Turner, A. H., Wu, E. Y., Zemcov, M. 2009; 692 (2): 1221-1246
  • Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 mu m: Broadening of the fundamental transition APPLIED PHYSICS LETTERS Kudrawiec, R., Poloczek, P., Misiewicz, J., Bae, H. P., Sarmiento, T., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris, J. S. 2009; 94 (3)

    View details for DOI 10.1063/1.3073718

    View details for Web of Science ID 000262724000010

  • Implantable optical biosensor for in vivo molecular imaging Conference on Optical Fibers and Sensors for Medical Diagnostics and Treatment Applications IX O'Sullivan, T. D., Munro, E., de la Zerda, A., Parashurama, N., Teed, R., Walls, Z., Levi, O., Gambhir, S. S., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2009

    View details for DOI 10.1117/12.811227

    View details for Web of Science ID 000284821100007

  • High quality III-V materials growth on Si (100) substrate via Ge buffer J. Crystal Growth Choi, D., Cagnon, J., Kim, E., Stemmer, S., McIntyre, P., C., Harris, J., S. 2009: 1962-71
  • Origin of non radiative recombination in GaInNAsSb/GaNAs quantum well lasers Ferguson, J., Smowton, P., Blood, P., Bae, H., P., Sarmiento, T., Harris, J., S. 2009
  • Origin of Non Radiative Recombination in GaInNAsSb/GaNAs Quantum Well Lasers Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009) Ferguson, J. W., Smowton, P. M., Blood, P., Bae, H., Sarmiento, T., Harris, J. S. IEEE. 2009: 1627–1628
  • A Implantable optical biosensor for in vivo molecular imaging Harris, J., S., O'Sullivan, T., D., Munro, E., Zerda, A., de la, Parashurama, N., Teed, R. 2009
  • High Efficiency Solar Cells based on Spontaneous Emission Inhibition in Photonic Crystals Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009) Ellis, B., Sarmiento, T., Harris, J., Vuckovic, J. IEEE. 2009: 2659–2660
  • Fermi Level Depinning For the Design of III-V FET Source/Drain Contacts International Symposium on VLSI Technology, Systems and Applications Hu, J., Guan, X., Choi, D., Harris, J. S., Saraswat, K., Wong, H. P. IEEE. 2009: 123–124
  • 1528 nm GaInNAsSb/GaAs Vertical Cavity Surface Emitting Lasers Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009) Sarmiento, T., Bae, H., O'Sullivan, T. D., Harris, J. S. IEEE. 2009: 1629–1630
  • Direct Band Gap Tensile-Strained Germanium Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009) Huo, Y., Lin, H., Rong, Y., Makarova, M., Kamins, T. I., Vuckovic, J., Harris, J. S. IEEE. 2009: 824–825
  • Near-infrared in vivo fluorescence sensor with integrated dielectric emission filter Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009) O'Sullivan, T. D., Munro, E., Conca, C., Parashurama, N., de la Zerda, A., Gambhir, S. S., Harris, J. S., Levi, O. IEEE. 2009: 3085–3086
  • Towards responsible use of cognitive-enhancing drugs by the healthy NATURE Greely, H., Sahakian, B., Harris, J., Kessler, R. C., Gazzaniga, M., Campbell, P., Farah, M. J. 2008; 456 (7223): 702-705

    View details for DOI 10.1038/456702a

    View details for Web of Science ID 000261559900020

    View details for PubMedID 19060880

  • Growth of mm-thick orientation-patterned GaAs for IR and THZ generation JOURNAL OF CRYSTAL GROWTH Lynch, C., Bliss, D. F., Zens, T., Lin, A., Harris, J. S., Kuo, P. S., Fejer, M. M. 2008; 310 (24): 5241-5247
  • Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy JOURNAL OF ELECTRONIC MATERIALS Kim, S. M., Yuen, H. B., Hatami, F., Chin, A., Harris, J. S. 2008; 37 (12): 1774-1779
  • Analysis of Active Hybrid Fiber-Semiconductor Devices for Optical Networks IEEE JOURNAL OF QUANTUM ELECTRONICS Khalili, A., Lim, X. H., Bae, H., Harris, J. S. 2008; 44 (11-12): 1042-1054
  • A review of progress on nano-aperture VCSEL CHINESE OPTICS LETTERS Rao, Z., Vo, S., Harris, J. S. 2008; 6 (10): 748-754
  • Low surface roughness and threading dislocation density Ge growth on Si (001) JOURNAL OF CRYSTAL GROWTH Choi, D., Ge, Y., Harris, J. S., Cagnon, J., Stemmer, S. 2008; 310 (18): 4273-4279
  • Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators APPLIED PHYSICS LETTERS Shin, B., Choi, D., Harris, J. S., Mclntyre, P. C. 2008; 93 (5)

    View details for DOI 10.1063/1.2966357

    View details for Web of Science ID 000258335900058

  • On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32% JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Misiewicz, J. 2008; 104 (3)

    View details for DOI 10.1063/1.2961330

    View details for Web of Science ID 000258493900052

  • Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge APPLIED PHYSICS LETTERS Ardalan, P., Pickett, E. R., Harris, J. S., Marshall, A. F., Bent, S. F. 2008; 92 (25)

    View details for DOI 10.1063/1.2951608

    View details for Web of Science ID 000257231200043

  • Molecular-beam epitaxial growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication APPLIED PHYSICS LETTERS Choi, D., Kim, E., McIntyre, P. C., Harris, J. S. 2008; 92 (20)

    View details for DOI 10.1063/1.2929386

    View details for Web of Science ID 000256196600093

  • Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning APPLIED PHYSICS LETTERS Pan, J., Huo, Y., Yamanaka, K., Sandhu, S., Scaccabarozzi, L., Timp, R., Povinelli, M. L., Fan, S., Fejer, M. M., Harris, J. S. 2008; 92 (10)

    View details for DOI 10.1063/1.2896615

    View details for Web of Science ID 000253989300114

  • The quasi-optical design of the QUaD telescope INFRARED PHYSICS & TECHNOLOGY O'Sullivan, C., Cahill, G., Murphy, J. A., Gear, W. K., Harris, J., Ade, P. A., Church, S. E., Thompson, K. L., Pryke, C., Bock, J., Bowden, M., Brown, M. L., Carlstrom, J. E., Castro, P. G., Culverhouse, T., Friedman, R. B., Ganga, K. M., Haynes, V., Hinderks, J. R., Kovak, J., Lange, A. E., Leitch, E. M., Mallie, O. E., Melhuish, S. J., Orlando, A., Piccirillo, L., Pisano, G., Rajguru, N., Rusholme, B. A., Schwarz, R., Taylor, A. N., Wu, E. Y., Zemcov, M. 2008; 51 (4): 277-286
  • Terahertz sources based on intracavity parametric down-conversion in quasi-phase-matched gallium arsenide IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Schaar, J. E., Vodopyanov, K. L., Kuo, P. S., Fejer, M. M., Yu, X., Lin, A., Harris, J. S., Bliss, D., Lynch, C., Kozlov, V. G., Hurlbut, W. 2008; 14 (2): 354-362
  • C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing ELECTRONICS LETTERS Roth, J. E., Fidaner, O., Edwards, E. H., Schaevitz, R. K., Kuo, Y., Helman, N. C., Kamins, T. I., Harris, J. S., Miller, D. A. 2008; 44 (1): 49-U63
  • Tunable narrow-bandwidth source of THz radiation based on frequency down-conversion in periodically structured gallium arsenide Conference on Terahertz Technology and Applications Schaar, J. E., Vodopyanov, K. L., Kuo, P. S., Fejer, M. M., Lin, A., Yu, X., Harris, J. S., Bliss, D., Lynch, C., Kozlov, V. G., Hurlbut, W. SPIE-INT SOC OPTICAL ENGINEERING. 2008

    View details for DOI 10.1117/12.763631

    View details for Web of Science ID 000254732000004

  • Experimental investigation of temperature dependence of 1.55 mu m GaInNAsSb/GaNAs QW lasers grown in MBE IEEE 21st International Semiconductor Laser Conference Bae, H., Sarmiento, T., Harris, J. S. IEEE. 2008: 59–60
  • Tunable THz Source Based on Intracavity Parametric Down-Conversion in Quasi-Phase-Matched GaAs Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2008) Schaar, J. E., Vodopyanov, K. L., Kuo, P. S., Fejer, M. M., Lin, A., Yu, X., Harris, J. S., Bliss, D., Lynch, C., Kozlov, V. G., Hurlbut, W. C. IEEE. 2008: 1459–1460
  • Optical probes of orientation-patterned ZnSe quasi-phase-matched devices Conference on Nonlinear Frequency Generation and Conversion - Materials, Devices, and Applications VII Kanner, G. S., Marable, M. L., Singh, N. B., Berghmans, A., Kahler, D., Wagner, B., Lin, A., Fejer, M. M., Harris, J. S., Schepler, K. L. SPIE-INT SOC OPTICAL ENGINEERING. 2008

    View details for DOI 10.1117/12.768553

    View details for Web of Science ID 000255510700015

  • Electronmodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and Effective Mass Issues Dilute III-V Nitride Semiconductors and Materials Systems Misiewicz, J., Kudrawiec, R., Gladysiewicz, M., Harris, J., S. edited by Erol, A. Springer Series in Materials Science Springer-Verlag, Berlin, Germany. 2008
  • THz source based on resonantly-enhanced difference frequency generation in periodically-inverted GaAs 33rd International Conference on Infrared, Millimeter and Terahertz Waves Vodopyanov, K. L., Schaar, J. E., Kuo, P. S., Fejer, M. M., Lin, A., Harris, J. S., Hurlbut, W. C., Kozlov, V. G., Bliss, D., Lynch, C. IEEE. 2008: 237–237
  • The Fermi level position in as-grown GaInNAS(Sb) quantum wells and layers studied by contactless electroreflectance Symposium on Novel Gain Materials and Devices Based on III-N-V Compounds held at the 2007 E-MRS Spring Meeting Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Gladysiewicz, M., Misiewicz, J. WILEY-V C H VERLAG GMBH. 2008: 473–77
  • Low-frequency noise characterization of near-IR VCSELs for functional brain imaging Conference on Photonic Therapeutics and Diagnostics IV Lee, T. T., Lim, P. G., Harris, J. S., Shenoy, K. V., Smith, S. J. SPIE-INT SOC OPTICAL ENGINEERING. 2008

    View details for DOI 10.1117/12.764143

    View details for Web of Science ID 000255314100050

  • GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 mu m Conference on Vertical-Cavity Surface-Emitting Lasers XII Gobe, M., Bae, H. P., Sarmiento, T., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2008

    View details for DOI 10.1117/12.762311

    View details for Web of Science ID 000254737900019

  • Magnetic Coupled Spin-torque Devices and Magnetic Ring Oscillator IEEE International Electron Devices Meeting Leem, L., Harris, J. S. IEEE. 2008: 159–162
  • Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Misiewicz, J. 2007; 102 (11)

    View details for DOI 10.1063/1.2817258

    View details for Web of Science ID 000251678800024

  • Effects of different plasma species (atomic N, metastable N-2(*), and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy APPLIED PHYSICS LETTERS Oye, M. M., Mattord, T. J., Hallock, G. A., Bank, S. R., Wistey, M. A., Reifsnider, J. M., Ptak, A. J., Yuen, H. B., Harris, J. S., Holmes, A. L. 2007; 91 (19)

    View details for DOI 10.1063/1.2806226

    View details for Web of Science ID 000250810300029

  • GaAs optical parametric oscillator with circularly polarized and depolarized pump OPTICS LETTERS Kuo, P. S., Vodopyanov, K. L., Fejer, M. M., Yu, X., Harris, J. S., Bliss, D. F., Weyburne, D. 2007; 32 (18): 2735-2737

    Abstract

    We demonstrate an optical parametric oscillator (OPO) based on GaAs pumped with linearly polarized and circularly polarized light and show that the relative OPO thresholds agree with theoretical expectations. For the circularly polarized pump, the threshold was as low as for the [111]-linearly polarized pump case. The pump was also passed through a Lyot depolarizer to produce pseudo-depolarized light, and the OPO threshold in this case was only 22% higher than that for [001]-linearly polarized pump.

    View details for Web of Science ID 000250151900035

    View details for PubMedID 17873952

  • Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared IEEE PHOTONICS TECHNOLOGY LETTERS Fidaner, O., Okyay, A. K., Roth, J. E., Schaevitz, R. K., Kuo, Y., Saraswat, K. C., Harris, J. S., Miller, D. A. 2007; 19 (17-20): 1631-1633
  • Recent progress on 1.55-mu m dilute-nitride lasers IEEE JOURNAL OF QUANTUM ELECTRONICS Bank, S. R., Bae, H., Goddard, L. L., Yuen, H. B., Wistey, M. A., Kudrawiec, R., Harris, J. S. 2007; 43 (9-10): 773-785
  • High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric APPLIED PHYSICS LETTERS Goel, N., Majhi, P., Tsai, W., Warusawithana, M., Schlom, D. G., Santos, M. B., Harris, J. S., Nishi, Y. 2007; 91 (9)

    View details for DOI 10.1063/1.2776846

    View details for Web of Science ID 000249156100134

  • High transmission through ridge nano-apertures on vertical-cavity surface-emitting lasers OPTICS EXPRESS Rao, Z., Hesselink, L., Harris, J. S. 2007; 15 (16): 10427-10438

    Abstract

    We report high-intensity nano-aperture Vertical-Cavity Surface- Emitting Lasers (VCSELs) with sub-100nm near-field spots using ridge apertures. Power transmission efficiency through different ridge apertures, including bowtie, C, H and I-shaped apertures on VCSELs were studied. Significantly higher transmission efficiencies were obtained from the ridge apertures than those from conventional square apertures. Mechanisms for high transmission through the ridge apertures are explained through simulation and waveguide theory. A new quadruple-ridge aperture is proposed and designed via simulation. With the high-intensity and small spot size, VCSELs using these ridge nano-apertures are very promising means to realize applications such as ultrahigh-density near-field optical data storage and ultrahigh-resolution near-field imaging etc.

    View details for Web of Science ID 000248753100057

    View details for PubMedID 19547395

  • Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Harris, J. S., Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Jackrel, D., Pickett, E. R., Sarmiento, T., Goddard, L. L., Lordi, V., Gugov, T. 2007; 244 (8): 2707-2729
  • Evanescent-coupled GaInNAsSb in-line fibre photodetectors IET OPTOELECTRONICS Yang, H., Khalili, A., Wistey, M., Harris, J. S. 2007; 1 (4): 175-177
  • High-intensity bowtie-shaped nano-aperture vertical-cavity surface-emitting laser for near-field optics OPTICS LETTERS Rao, Z., Hesselink, L., Harris, J. S. 2007; 32 (14): 1995-1997

    Abstract

    We report a high-intensity nano-aperture vertical-cavity surface-emitting laser (VCSEL) utilizing a bowtie-shaped aperture. A maximum power of 188 microW is achieved from a 180 nm bowtie aperture at a wavelength of 970 nm. The near-field full width at half-maximum intensity spot size 20 nm away from the bowtie aperture is 64 nm x 66 nm from simulation, and the peak near-field intensity is estimated to be as high as 47 mW/microm(2). This intensity is high enough to realize near-field optical recording, and the small spot size corresponds to storage densities up to 150 Gbits/in(2). The bowtie-aperture VCSEL also enables other applications, such as compact high-intensity probes for ultrahigh-resolution near-field imaging and single molecule fluorescence and spectroscopy.

    View details for Web of Science ID 000248669200013

    View details for PubMedID 17632621

  • Annealing condition optimization and electrical characterization of amorphous LaAlO3/GaAs metal-oxide-semiconductor capacitors APPLIED PHYSICS LETTERS Choi, D., Harris, J. S., Warusawithana, M., Schlom, D. G. 2007; 90 (24)

    View details for DOI 10.1063/1.2748308

    View details for Web of Science ID 000247305400102

  • Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers APPLIED PHYSICS LETTERS Bae, H. P., Bank, S. R., Yuen, H. B., Sarmiento, T., Pickett, E. R., Wistey, M. A., Harris, J. S. 2007; 90 (23)

    View details for DOI 10.1063/1.2746944

    View details for Web of Science ID 000247145500019

  • Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy JOURNAL OF APPLIED PHYSICS Jackrel, D. B., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris, J. S. 2007; 101 (11)

    View details for DOI 10.1063/1.2744490

    View details for Web of Science ID 000247306000174

  • High-intensity C-shaped nanoaperture vertical-cavity surface-emitting laser with controlled polarization APPLIED PHYSICS LETTERS Rao, Z., Matteo, J. A., Hesselink, L., Harris, J. S. 2007; 90 (19)

    View details for DOI 10.1063/1.2737938

    View details for Web of Science ID 000246413400010

  • Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (similar to 80 nm) Si1-xGex step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor applications 24th North American Conference on Molecular Beam Epitaxy (NAMBE 2006) Oye, M. M., Shahrjerdi, D., Ok, I., Hurst, J. B., Lewis, S. D., Dey, S., Kelly, D. Q., Joshi, S., Mattord, T. J., Yu, X., Wistey, M. A., Harris, J. S., Holmes, A. L., Lee, J. C., Banerjee, S. K. A V S AMER INST PHYSICS. 2007: 1098–1102

    View details for DOI 10.1116/1.2713119

    View details for Web of Science ID 000247551300083

  • Optical modulator on silicon employing germanium quantum wells OPTICS EXPRESS Roth, J. E., Fidaner, O., Schaevitz, R. K., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2007; 15 (9): 5851-5859

    Abstract

    We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers. The peak contrast ratio is 7.3 dB at 1457 nm for a 10 V swing, and exceeds 3 dB from 1441 nm to 1461 nm. The novel side-entry structure employs an asymmetric Fabry-Perot resonator at oblique incidence. Unlike waveguide modulators, the design is insensitive to positional misalignment, maintaining > 3 dB contrast while translating the incident beam 87 mum and 460 mum in orthogonal directions. Since the optical ports are on the substrate edges, the wafer top and bottom are left free for electrical interconnections and thermal management.

    View details for Web of Science ID 000246395000064

    View details for PubMedID 19532843

  • Growth of GaAs with orientation-patterned structures for nonlinear optics 14th International Conference on Molecular Beam Epitaxy (MBE XIV) Yu, X., Scaccabarozzi, L., Lin, A. C., Fejer, M. M., Harris, J. S. ELSEVIER SCIENCE BV. 2007: 163–167
  • Integrated semiconductor optical sensors for cellular and neural imaging Biomedical Optics Topical Meeting of the Optical-Society-of-America Levi, O., Lee, T. T., Lee, M. M., Smith, S. J., Harris, J. S. OPTICAL SOC AMER. 2007: 1881–89

    Abstract

    We review integrated optical sensors for functional brain imaging, localized index-of-refraction sensing as part of a lab-on-a-chip, and in vivo continuous monitoring of tumor and cancer stem cells. We present semiconductor-based sensors and imaging systems for these applications. Measured intrinsic optical signals and tissue optics simulations indicate the need for high dynamic range and low dark-current neural sensors. Simulated and measured reflectance spectra from our guided resonance filter demonstrate the capability for index-of-refraction sensing on cellular scales, compatible with integrated biosensors. Finally, we characterized a thermally evaporated emission filter that can be used to improve sensitivity for in vivo fluorescence sensing.

    View details for PubMedID 17356634

  • Conduction band offset for Ga0.62In0.38NxAs0.991-xSb0.009/GaNyAs1-y/GaAs systems with the ground state transition at 1.5-1.65 mu m APPLIED PHYSICS LETTERS Kudrawiec, R., Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., Goddard, L. L., Harris, J. S. 2007; 90 (13)

    View details for DOI 10.1063/1.2716366

    View details for Web of Science ID 000245317100026

  • Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance APPLIED PHYSICS LETTERS Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Misiewicz, J. 2007; 90 (6)

    View details for DOI 10.1063/1.2437729

    View details for Web of Science ID 000244162300019

  • Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content 2nd International Workshop on Modulation Spectroscopy of Semiconductor Structures Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Gladysiewicz, M., Misiewicz, J. WILEY-V C H VERLAG GMBH. 2007: 364–72
  • The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance 2nd International Workshop on Modulation Spectroscopy of Semiconductor Structures Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Gladysiewicz, M., Misiewicz, J. WILEY-V C H VERLAG GMBH. 2007: 543–46
  • Optical link on silicon employing Ge/SiGe quantum well structures 20th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society Fidaner, O., Okyay, A. K., Roth, J. E., Scheavitz, R. K., Kuo, Y., Saraswat, K. C., Harris, J. S., Miller, D. A. IEEE. 2007: 852–853
  • GaAs Optical Parametric Oscillator with a Circularly Polarized Pump Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference Kuo, P. S., Vodopyanov, K. L., Fejer, M. M., Yu, X., Lin, A. C., Harris, J. S., Bliss, D. F., Lynch, C. L. IEEE. 2007: 113–114
  • The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects Harris, J., S., Choi, D., Warusawithana, M., Chui, C., O., Chen, J., Tsai, W. 2007
  • GaIn) (NAsSb): MBE growth, heterostructure and nanophotonic devices International J. Nanoscience Harris, J., S. 2007; 3-4 (6): 269-274
  • Terahertz wave generation in orientation-patterned GaAs using resonantly enhanced scheme Vodopyanov, K., L., Schaar, J., K., Kuo, P., S., Fejer, M., M., Yu, X., Harris, J., S. 2007
  • Optical Analogue to Electromagnetically Induced Transparency in Photonic Crystals, Simulation and Experiments Technical Digest OSA 2007 Slow and Fast Light, SWB2 Harris, J., S., Pan, J., Sandhu, S., Huo, Y., Povinelli, M., L., Fejer, M., M. 2007
  • New Light from Gallium Arsenide: Micro-Structured GaAs for Mid-IR and THz-Wave Generation Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference Vodopyanov, K. L., Schaar, J. E., Kuo, P. S., Fejer, M. M., Yu, X., Harris, J. S., Kozlov, V., Hurlbut, W. C., Lee, Y., Lynch, C., Bliss, D. IEEE. 2007: 111–112
  • A highly stable evanescently-coupled hybrid fibre semiconductor laser design Khalili, A., Lim, X., H., Bae, H., Harris, J., S. 2007
  • Compact Semiconductor Bioluminescence Bio-sensors Technical Digest Frontiers in Optics, (Optical Society of America), paper JMD5 O'Sullivan, T., Wechselberger, A., Levi, O., Harris, J. 2007
  • Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications Frontiers in Molecular-Beam Epitaxy toward Noverl Devices Harris, J., S., Kudrawiec, R., Yuen, H., B., Bank, S., R., Bae, H., P., Wistey, M., A. edited by Grahn, H., Koch, R., Trampert, A. Wiley VCH, Berlin, Germany. 2007
  • Terahertz wave generation in orientation-patterned GaAs using resonantly enhanced scheme Conference on Nonlinear Frequency Generation and Conversion - Materials, Devices, and Applications VI Vodopyanov, K. L., Schaar, J. E., Kuo, P. S., Fejer, M. M., Yu, X., Harris, J. S., Kozlov, V. G., Bliss, D., Lynch, C. SPIE-INT SOC OPTICAL ENGINEERING. 2007

    View details for DOI 10.1117/12.702302

    View details for Web of Science ID 000245827000007

  • The quantum confined Stark effect in Ge/SiGe quantum wells: An efficient electroabsorption mechanism for silicon-based applications 4th IEEE International Conference on Group IV Photonics Roth, J. E., Fidaner, O., Schaevitz, R. K., Edwards, E. H., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. IEEE. 2007: 178–180
  • Contactless electroreflectance of GaInNAsSb/GaAs single quantum wells with indium content of 8%-32% JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Yuen, H. B., Motyka, M., Gladysiewicz, M., Misiewicz, J., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S. 2007; 101 (1)

    View details for DOI 10.1063/1.2382721

    View details for Web of Science ID 000243585200024

  • Thermally induced relaxation in GaInNAsSb quantum well structures Symposium on Semiconductor Defect Engineering Materials, Synthetic Structures and Devices II held at the 2007 MRS Spring Meeting Pickett, E., Bank, S., Yuen, H., Bae, H., Sarmiento, T., Marshall, A., Harris, J. MATERIALS RESEARCH SOCIETY. 2007: 105–110
  • New THz sources for bio-medical imaging Conference on Novel in - Plane Semiconductor Lasers VI Harris, J. S., Gu, A., Kim, S. M. SPIE-INT SOC OPTICAL ENGINEERING. 2007

    View details for DOI 10.1117/12.714266

    View details for Web of Science ID 000246393700022

  • (GaIn)(NAsSb): MBE growth, heterostructure and nanophotonic devices 13th International Symposium on Nanstructures - Physics and Technology Harris, J. S. WORLD SCIENTIFIC PUBL CO PTE LTD. 2007: 269–74
  • Optical Characterization and Sensitivity Evaluation of Guided-Resonances in Photonic Crystal Slabs for Biosensing Applications Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference Levi, O., Lee, M. M., Zhang, J., Lousse, V., Brueck, S. R., Fan, S., Harris, J. S. IEEE. 2007: 993–994
  • High-intensity bowtie nano-aperture Vertical-Cavity Surface-Emitting Laser for ultrahigh-density near-field optical data storage Topical Meeting on Optical Data Storage Rao, Z., Hesselink, L., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2007

    View details for DOI 10.1117/12.738952

    View details for Web of Science ID 000250199900039

  • Sensitivity analysis of a photonic crystal structure for index-of-refraction sensing Conference on Nanoscale Imaging, Spectroscopy, Sensing, and Actuation for Biomedical Applications IV Levi, O., Lee, M. M., Zhang, J., Lousse, V., Brueck, S. R., Fan, S., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2007

    View details for DOI 10.1117/12.705670

    View details for Web of Science ID 000245976200016

  • Enhanced second-harmonic generation in AlGaAs/AlxOy tightly confining waveguides and resonant cavities OPTICS LETTERS Scaccabarozzi, L., Fejer, M. M., Huo, Y., Fan, S., Yu, X., Harris, J. S. 2006; 31 (24): 3626-3628

    Abstract

    We demonstrate second-harmonic generation (SHG) from sub-micrometer-sized AlGaAs/AlxOy artificially birefringent waveguides. The normalized conversion efficiency is the highest ever reported. We further enhanced the SHG using a waveguide-embedded cavity formed by dichroic mirrors. Resonant enhancements as high as approximately 10x were observed. Such devices could be potentially used as highly efficient, ultracompact frequency converters in integrated photonic circuits.

    View details for Web of Science ID 000242560400022

    View details for PubMedID 17130925

  • Dichroic mirror embedded in a submicrometer waveguide for enhanced resonant nonlinear optical devices OPTICS LETTERS Scaccabarozzi, L., Fejer, M. M., Huo, Y., Fan, S., Yu, X., Harris, J. S. 2006; 31 (22): 3285-3287

    Abstract

    We report the design, fabrication and characterization of novel dichroic mirrors embedded in a tightly confining AlGaAs/Al(x)O(y) waveguide. Reflection at the first-harmonic wavelength as high as 93% is achieved, while high transmission is maintained at the second-harmonic wavelength. The measured cavity spectrum is in excellent agreement with finite-difference time-domain simulations. Such a mirror is essential for achieving resonant enhancement of second-harmonic generation.

    View details for Web of Science ID 000241799700022

    View details for PubMedID 17072398

  • Long-wave IR chemical sensing based on difference frequency generation in orientation-patterned GaAs APPLIED PHYSICS B-LASERS AND OPTICS Bisson, S. E., Kulp, T. J., Levi, O., Harris, J. S., Fejer, M. M. 2006; 85 (2-3): 199-206
  • Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Kuo, Y., Lee, Y. K., Ge, Y., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2006; 12 (6): 1503-1513
  • Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms Symposium on Current Trends in Optical and X-Ray Meterology of Advanced Materials for Nanoscale Devices held at the 2005 MRS Spring Meeting Kudrawiec, R., Gladysiewicz, M., Motyka, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. R., Harris, J. S. ELSEVIER SCIENCE BV. 2006: 152–57
  • InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition APPLIED PHYSICS LETTERS Goel, N., Majhi, P., Chui, C. O., Tsai, W., Choi, D., Harris, J. S. 2006; 89 (16)

    View details for DOI 10.1063/1.2363959

    View details for Web of Science ID 000241405200124

  • Terahertz-wave generation in quasi-phase-matched GaAs APPLIED PHYSICS LETTERS Vodopyanov, K. L., Fejer, M. M., Yu, X., Harris, J. S., Lee, Y., Hurlbut, W. C., Kozlov, V. G., Bliss, D., Lynch, C. 2006; 89 (14)

    View details for DOI 10.1063/1.2357551

    View details for Web of Science ID 000241056900019

  • InSb and InSb : N multiple quantum dots APPLIED PHYSICS LETTERS Hatami, F., Kim, S. M., Yuen, H. B., Harris, J. S. 2006; 89 (13)

    View details for DOI 10.1063/1.2357546

    View details for Web of Science ID 000240875800115

  • Mid-infrared luminescence of an InNAsSb/InAs single quantum well grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Yuen, H. B., Kim, S. M., Hatami, F., Harris, J. S., Chin, A. H. 2006; 89 (12)

    View details for DOI 10.1063/1.2356102

    View details for Web of Science ID 000240680300041

  • Neural stimulation with a carbon nanotube microelectrode array NANO LETTERS Wang, K., Fishman, H. A., Dai, H., Harris, J. S. 2006; 6 (9): 2043-2048

    Abstract

    We present a novel prototype neural interface using vertically aligned multiwalled carbon nanotube (CNT) pillars as microelectrodes. Functionalized hydrophilic CNT microelectrodes offer a high charge injection limit (1-1.6 mC/cm2) without faradic reactions. The first repeated in vitro stimulation of hippocampal neurons with CNT electrodes is demonstrated. These results suggest that CNTs are capable of providing far safer and more efficacious solutions for neural prostheses than previous metal electrode approaches.

    View details for DOI 10.1021/nl061241t

    View details for Web of Science ID 000240465100037

    View details for PubMedID 16968023

  • Dilute magnetic semiconductors based on InN International Symposium on Structure and Dynamics on the Nanometer Scale (SDNS) Ney, A., Rajaram, R., Harris, J. S., Parkin, S. S. TAYLOR & FRANCIS LTD. 2006: 785–91
  • Optoelectronic switches based on diffusive conduction JOURNAL OF APPLIED PHYSICS Demir, H. V., Koklu, F. H., Yairi, M. B., Harris, J. S., Miller, D. A. 2006; 100 (4)

    View details for DOI 10.1063/1.2234818

    View details for Web of Science ID 000240236800008

  • An evanescent-coupling approach to making stable fiber-coupled semiconductor lasers APPLIED PHYSICS LETTERS Khalili, A., Bae, H., Harris, J. S. 2006; 89 (4)

    View details for DOI 10.1063/1.2234591

    View details for Web of Science ID 000239376500005

  • Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes APPLIED PHYSICS LETTERS Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., Moto, A., Harris, J. S. 2006; 88 (24)

    View details for DOI 10.1063/1.2213176

    View details for Web of Science ID 000238314800041

  • Interband transitions in GaN0.02As0.98-xSbx/GaAs (0 < x <= 0.11) single quantum wells studied by contactless electroreflectance spectroscopy PHYSICAL REVIEW B Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, J. S. 2006; 73 (24)
  • Band gap discontinuity in Ga0.9In0.1N0.027As0.973-xSbx/GaAs single quantum wells with 0 <= x < 0.06 studied by contactless electroreflectance spectroscopy APPLIED PHYSICS LETTERS Kudrawiec, R., Motyka, M., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., Harris, J. S. 2006; 88 (22)

    View details for DOI 10.1063/1.2208949

    View details for Web of Science ID 000238001900013

  • Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications APPLIED PHYSICS LETTERS Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., Harris, J. S. 2006; 88 (22)

    View details for DOI 10.1063/1.2208375

    View details for Web of Science ID 000238001900015

  • Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells APPLIED PHYSICS LETTERS Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., Harris, J. S. 2006; 88 (22)

    View details for DOI 10.1063/1.2208937

    View details for Web of Science ID 000238001900031

  • The role of antimony on properties of widely varying GaInNAsSb compositions JOURNAL OF APPLIED PHYSICS Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., Harris, J. S. 2006; 99 (9)

    View details for DOI 10.1063/1.2191745

    View details for Web of Science ID 000237682900024

  • Structural and magnetic properties of Cr and Mn doped InN 3rd Moscow International Symposium on Magnetism (MISM 2005) Ney, A., Rajaram, R., Arenholz, E., Harris, J. S., Samant, M., Farrow, R. F., Parkin, S. S. ELSEVIER SCIENCE BV. 2006: 7–11
  • Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy 23rd North American Conference on Molecular Beam Epitaxy Rajaram, R., Ney, A., Farrow, R. F., Parkin, S. S., Solomon, G. S., Harris, J. S. A V S AMER INST PHYSICS. 2006: 1644–48

    View details for DOI 10.1116/1.2192537

    View details for Web of Science ID 000238790000109

  • Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy 23rd North American Conference on Molecular Beam Epitaxy Ptak, A. J., Friedman, D. J., Kurtz, S., REEDY, R. C., Young, M., Jackrel, D. B., Yuen, H. B., Bank, S. R., Wistey, M. A., Harris, J. S. A V S AMER INST PHYSICS. 2006: 1540–43

    View details for DOI 10.1116/1.2190664

    View details for Web of Science ID 000238790000085

  • Biomedical terahertz imaging with a quantum cascade laser APPLIED PHYSICS LETTERS Kim, S. M., Hatami, F., Harris, J. S., Kurian, A. W., Ford, J., King, D., Scalari, G., Giovannini, M., Hoyler, N., Faist, J., Harris, G. 2006; 88 (15)

    View details for DOI 10.1063/1.2194229

    View details for Web of Science ID 000236796400112

  • GalnNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm ELECTRONICS LETTERS Wistey, M. A., Bank, S. R., Bae, H. P., Yuen, H. B., Pickett, E. R., Goddard, L. L., Harris, J. S. 2006; 42 (5): 282-283
  • Room-temperature continuous-wave 1.55 mu m GalnNAsSb laser on GaAs ELECTRONICS LETTERS Bank, S. R., Bae, H. P., Yuen, H. B., Wistey, M. A., Goddard, L. L., Harris, J. S. 2006; 42 (3): 156-157
  • Integrated photonic switches for nanosecond packet-switched optical wavelength conversion OPTICS EXPRESS Fidaner, O., Demir, H. V., Sabnis, V. A., Zheng, J. F., Harris, J. S., Miller, D. A. 2006; 14 (1): 361-368

    Abstract

    We present a multifunctional photonic switch that monolithically integrates an InGaAsP/InP quantum well electroabsorption modulator and an InGaAs photodiode as a part of an on-chip, InP optoelectronic circuit. The optical multifunctionality of the switch offers many configurations to allow for different optical network functions on a single chip. Here we experimentally demonstrate GHz-range optical wavelength-converting switching with only ~10 mW of absorbed input optical power, electronically controlled packet switching with a reconfiguration time of <2.5 ns, and optically controlled packet switching in <300 ps.

    View details for Web of Science ID 000234538800040

    View details for PubMedID 19503349

  • Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions ELECTRONICS LETTERS Yang, H., Lordi, V., Harris, J. S. 2006; 42 (1): 52-54
  • Integrated biomedical nanosensor using guided resonance in photonic crystal structures Conference on Nanobiophotonics and Biomedical Applications III Levi, O., Suh, W., Lee, M. M., Zhang, J., Brueck, S. R., Fan, S., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2006

    View details for DOI 10.1117/12.647312

    View details for Web of Science ID 000237699500014

  • Dilute nitride lasers and photodetectors Conference on Optical Fiber Communications/National Fiber Optic Engineers Conference Harris, J. S. OPTICAL SOC AMERICA. 2006: 1643–1645
  • A highly stable evanescently-coupled fiber semiconductor laser Khalili, A., Bae, H., Harris, J., S. 2006
  • Tunable THz source based on frequency conversion in quasi-phasematched GaAs Conference on Optical Methods in the Life Sciences Vodopyanov, K. L., Schaar, J., Fejer, M. M., Yu, X., Harris, J. S., Lee, Y., Kozlov, V. G., Imeshev, G., Fermann, M. E., Bliss, D., Lynch, C. SPIE-INT SOC OPTICAL ENGINEERING. 2006

    View details for DOI 10.1117/12.692053

    View details for Web of Science ID 000243909000017

  • Low-threshold CW 1.55- mu m GaAs-based lasers Harris, J., S., Bank, S., R., Bae, H., P., Yuen, H., B., Goddard, L., L., Wistey, M., A. 2006
  • A high-intensity nano-aperture vertical-cavity surface-emitting laser with controlled polarization Rao, Z., L., Matteo, J., A., Hesselink, L., Harris, J., S. 2006
  • Low-threshold CW 1.55-mu m GaAs-based lasers Conference on Optical Fiber Communications/National Fiber Optic Engineers Conference Bank, S. R., Bae, H. P., Yuen, H. B., Goddard, L. L., Wistey, M. A., Sarmiento, T., Harris, J. S. OPTICAL SOC AMERICA. 2006: 1646–1648
  • Self-aligned via and trench for metal contact in III-V semiconductor devices J. Vac. Sci. Technol. Zheng, J., F., Demir, H., V., Sabnis, V., A., Fidaner, O., Harris, J., S., Miller, D., A.B. 2006; 3 (24): 1117-122
  • Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs Electron. Lett. Bank, S., R., Bae, H., Yuen, H., B., Wistey, M., A., Goddard, L., L., Harris, J., S. 2006; 3 (42): 156-7
  • Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions Electron. Lett. Yang, H., Lordi, V., Harris, J., S. 2006; 1 (42): 52-4
  • Very Low-Threshold 1.55-μm Dilute-Nitride Lasers Bank, S., R., Bae, H., P., Goddard, L., L., Yuen, H., B., Wistey, M., A., Harris, J., S. 2006
  • New light from gallium arsenide: micro-structured GaAs for mid-IR and THz-wave generation Vodopyanov, K., L., Schaar, J., E., Kuo, P., S., Fejer, M., M., Yu, X., Harris, J., S. 2006
  • Ge/SiGe quantum confined Stark effect modulators on silicon Harris, J., S., Kuo, Y., H., Miller, S., A.B. 2006
  • Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs J. Phys.: Con. Mat. Ney, A., Harris, J., S., Parkin, S., S.P. 2006; 17 (18): 4397-406
  • Structural and magnetic properties of Cr and Mn doped InN J. Mag. Magnetic Materials Ney, A., Rajaram, R., Arenholz, E., Harris, J., S., Samant, M., Farrow, R., F.C. 2006; 1 (300): 7-11
  • High-power source of THz radiation based on orientation-patterned GaAs pumped by a fiber laser Optics Express Imeshev, G., Fermann, M., E., Vodopyanov, K., L., Fejer, M., M., Yu, X., Harris, J., S. 2006: 4439-444
  • GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm Electron. Lett. Harris, J., S., Wistey, M., A., Bank, S., R., Bae, H., Yuen, H., B., Pickett, E., R. 2006; 5 (42): 282-3
  • Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy J. Vac. Sci. Technol. Harris, J., S., Ptak, A., J., Friedman, D., J., Kurtz, S., Reedy, R., C., Young, M. 2006; 3 (24): 1540-43
  • Monolithic GaInNAsSb vertical cavity surface emitting lasers at 1534 nm Wistey, M., A., Bank, S., R, Bae, H., Yuen, H., B., Goddard, L., L., Harris, J., S. 2006
  • Investigation of nitrogen induced closely coupled Sb based quantum dots for infrared sensors application Kim, S., M., Hatami, F., Yuen, H., B., Harris, J., S. 2006
  • GaAs optical parametric oscillator with a circularly polarized pump Kuo, P., S., Vodopyanov, K., L., Fejer, M., M., Yu, X., Lin, A., C., Harris, J., S. 2006
  • 0.8-3.5 THz source based on fiber-laser pumped orientation-patterned GaAs Harris, J., S., Vodopyanov, K., L., Imeshev, G., Fermann, M., E., Fejer, M., M. 2006
  • Standing-wave Fourier transform interferometer with an HPT IEEE Photon. Techn. Lett. Fu, J., X., Yu, X., Zhang, B., Harris Jr., J., S. 2006; 1 (18): 40-2
  • Guided-resonance in photonic crystal slabs for biosensing applications Levi, O., Suh, W., Lee, M., M., Solgaard, O., Harris, J., S. 2006
  • Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy J. Vac. Sci. Techn. Rajaram, R., Ney, A., Farrow, R., F.C., Parkin, S., S.P., Solomon, G., S., Harris Jr., J., S. 2006; 3 (B24): 1644-8
  • Green emission from InP-GaP quantum-dot light-emitting diodes IEEE Photon. Techn. Lett. Hatami, F., Masselink, W., T., Lordi, V., Harris, J., S. 2006; 18: 895-897
  • Tunable THz source based on frequency conversion in quasi-phase-matched GaAs Vodopyanov, K., L., Schaar, J., Fejer, M., M., Yu, X., Harris, J., S., Lee, Y., S. 2006
  • Temperature and Humidity Dependent Reliability Analysis of RGB LED Chip Fu, J., X., Souri, S., Harris Jr., J., S. 2006
  • Nonlinear optical effects in InxGa(1-x)As quantum systems for saturable absorbers Aldaz, R., I., Wiemer, M., W., Miller, D., A.B., Harris, J., S. 2006
  • Dilute nitride lasers and photodetectors Harris, J., S. 2006
  • Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 µm Solid State Communic. Harris, J., S., Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H., B., Bank, S., R. 2006; 1 (137): 138-141
  • Colour-tunable light-emitting diodes based on InP/GaP nanostructures Nanotechnology Hatami, F., Masselink, W., T., Harris, J., S. 2006; 15 (17): 3703-06
  • Biomedical terahertz imaging with a quantum cascade laser Appl. Phys. Lett. Kim, S., M., Hatami, F., Harris, J., S., Kurian, A., W., Ford, J., King, D. 2006; 15 (88): 1539031-3
  • Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 mu m SOLID STATE COMMUNICATIONS Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, J. S. 2006; 137 (3): 138-141
  • Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function 28th Annual International Conference of the IEEE-Engineering-in-Medicine-and-Biology-Society Lee, T. T., Levi, O., Cang, J., Kaneko, M., Stryker, M. P., Smith, S. J., Shenoy, K. V., Harris, J. S. IEEE. 2006: 2443–2446
  • GaInNAsSb solar cells grown by molecular beam epitaxy 4th World Conference on Photovoltaic Energy Conversion Jackrel, D., Ptak, A., Bank, S., Yuen, H., Wistey, M., Friedman, D., Kurtz, S., Harris, J. S. IEEE. 2006: 783–786
  • Optical parametric generation of a mid-infrared continuum in orientation-patterned GaAs OPTICS LETTERS Kuo, P. S., Vodopyanov, K. L., Fejer, M. M., Simanovskii, D. M., Yu, X., Harris, J. S., Bliss, D., Weyburne, D. 2006; 31 (1): 71-73

    Abstract

    We have generated an ultrabroad mid-infrared continuum by using single-pass optical parametric generation (OPG) in orientation-patterned GaAs (OP-GaAs). The spectrum spans more than an octave, from 4.5 to 10.7 microm, measured 20 dB down from the peak. The 17.5 mm long, 0.5 mm thick, all-epitaxially-grown OP-GaAs sample with a 166.6-microm quasi-phase-matching period was pumped with 3.1-3.3 microm wavelength, 1 ps pulses up to 2 microJ in energy. The OPG threshold was observed at 55 nJ pump energy with the pump polarized along the [111] crystal direction. The slope efficiency near threshold was 51%, and the external conversion efficiency was as high as 15%.

    View details for Web of Science ID 000234181600023

    View details for PubMedID 16419881

  • Germanium electroabsorption devices on silicon for optical interconnects Conference on Silicon Photonics Kuo, Y., Miller, D. A., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2006

    View details for DOI 10.1117/12.674733

    View details for Web of Science ID 000237274900009

  • Compact standing-wave Fourier-transform interferometer with harmonic spectral analysis Conference on Coherence Domain Optical Methods and Optical Coherence Tomography in Biomedicine X Fu, J., Yu, X., Zhang, B., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2006

    View details for DOI 10.1117/12.649113

    View details for Web of Science ID 000237132000041

  • Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function. Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Conference Lee, T. T., Levi, O., Cang, J., Kaneko, M., Stryker, M. P., Smith, S. J., Shenoy, K. V., Harris, J. S. 2006; 1: 1025-1028

    Abstract

    Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

    View details for PubMedID 17946016

  • Ge/SiGe quantum-confined stark modulators on silicon 19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society Harris, J. S. IEEE. 2006: 903–904
  • Comparative analysis of bio-medical imaging at 3.7 terahertz with a high power quantum cascade laser 19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society Kim, S. M., Hatami, F., Gu, A., Kurian, A. W., Ford, J., Harris, J. S., Scalari, G., Faist, J. IEEE. 2006: 231–232
  • A C-shaped nanoaperture Vertical-Cavity Surface-Emitting Laser for high-density near-field optical data storage Conference on Vertical-Cavity Surface-Emitting Lasers X Rao, Z., Matteo, J. A., Hesselink, L., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2006

    View details for DOI 10.1117/12.645083

    View details for Web of Science ID 000237084500016

  • Bio-medical imaging with a terahertz quantum cascade laser Conference on Nanobiophotonics and Biomedical Applications III Kim, S. M., Hatami, F., Kurian, A. W., Ford, J., Harris, J. S., Scalari, G., Giovannini, M., Hoyler, N., Faist, J., Harris, G. SPIE-INT SOC OPTICAL ENGINEERING. 2006

    View details for DOI 10.1117/12.647233

    View details for Web of Science ID 000237699500007

  • Efficient continuous wave second harmonic generation pumped at 1.55 mu m in quasi-phase-matched AlGaAs waveguides OPTICS EXPRESS Yu, X., Scaccabarozzi, L., Harris, J. S., Kuo, P. S., Fejer, M. M. 2005; 13 (26): 10742-10748

    Abstract

    We have fabricated quasi-phase-matched AlGaAs waveguides for continuous-wave second-harmonic generation (SHG) pumped around 1.55 microm. We find that the losses, which limit the conversion efficiency of this type of waveguide, are resulted from two corrugations--the initial template corrugation and the regrowth-induced domain-boundary corrugations. We are able to reduce the waveguide loss by improving the growth conditions. The waveguide loss is 6-7 dB/cm at 1.55 microm, measured using the Fabry-Perot method. A record internal SHG conversion efficiency of 23 %W-1 for AlGaAs waveguides is achieved using a 5-mm-long waveguide with a pump wavelength of 1.568 microm.

    View details for Web of Science ID 000234263000032

    View details for PubMedID 19503290

  • Novel on-chip fully monolithic integration of GaAs devices with completely fabricated SiCMOS circuits IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Ma, K., Chen, R., Miller, D. A., Harris, J. S. 2005; 11 (6): 1278-1283
  • Intimate monolithic integration of chip-scale photonic circuits IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Sabnis, V. A., Demir, H. V., Fidaner, O., Zheng, J. F., Harris, J. S., Miller, D. A., Li, N., Wu, T. C., Chen, H. T., Houng, Y. M. 2005; 11 (6): 1255-1265
  • Strong quantum-confined Stark effect in germanium quantum-well structures on silicon NATURE Kuo, Y. H., Lee, Y. K., Ge, Y. S., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2005; 437 (7063): 1334-1336

    Abstract

    Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated; but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimetres) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism, which allows modulator structures with only micrometres of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor; such semiconductors often display much weaker optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.

    View details for DOI 10.1038/nature04204

    View details for PubMedID 16251959

  • Spectral shaping of electrically controlled MSM-based tunable photodetectors IEEE PHOTONICS TECHNOLOGY LETTERS Chen, R., Fu, J. X., Miller, D. A., Harris, J. S. 2005; 17 (10): 2158-2160
  • Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Motyka, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, J. S. 2005; 98 (6)

    View details for DOI 10.1063/1.2060940

    View details for Web of Science ID 000232226000033

  • On the temperature sensitivity of 1.5-mu m GaInNAsSb lasers 19th IEEE International Semiconductor Laser Conference Bank, S. R., Goddard, L. L., Wistey, M. A., Yuen, H. B., Harris, J. S. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2005: 1089–98
  • Arsenic surface segregation during in situ doped silicon and Si1-xGex molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH Liu, X., Tang, Q., Harris, J. S., Kamins, T. I. 2005; 281 (2-4): 334-343
  • Effects of growth temperature on the structural and optical properties of 1.55 mu m GaInNAsSb quantum wells grown on GaAs APPLIED PHYSICS LETTERS Bank, S. R., Yuen, H. B., Wistey, M. A., Lordi, V., Bae, H. P., Harris, J. S. 2005; 87 (2)

    View details for DOI 10.1063/1.1993772

    View details for Web of Science ID 000230435800017

  • A single transverse-mode monolithically integrated long vertical-cavity surface-emitting laser IEEE PHOTONICS TECHNOLOGY LETTERS Wiemer, M. W., Aldaz, R. I., Miller, D. A., Harris, J. S. 2005; 17 (7): 1366-1368
  • MSM-based integrated CMOS wavelength-tunable optical receiver IEEE PHOTONICS TECHNOLOGY LETTERS Chen, R., Chin, H., Miller, D. A., Ma, K., Harris, J. S. 2005; 17 (6): 1271-1273
  • Improved optical quality of GaNAsSb in the dilute Sb limit JOURNAL OF APPLIED PHYSICS Yuen, H. B., Bank, S. R., Wistey, M. A., Harris, J. S., Seong, M. J., Yoon, S., Kudrawiec, R., Misiewicz, J. 2005; 97 (11)

    View details for DOI 10.1063/1.1926398

    View details for Web of Science ID 000229804700026

  • Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides APPLIED PHYSICS LETTERS Oye, M. M., Wistey, M. A., Reifsnider, J. M., Agarwal, S., Mattord, T. J., Govindaraju, S., Hallock, G. A., Holmes, A. L., Bank, S. R., Yuen, H. B., Harris, J. S. 2005; 86 (22)

    View details for DOI 10.1063/1.1940126

    View details for Web of Science ID 000229590100014

  • Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs 22nd North American Conference on Molecular Beam Epitaxy (NAMBE 2004) Bank, S. R., Wistey, M. A., Yuen, H. B., Lordi, V., Gambin, V. F., Harris, J. S. A V S AMER INST PHYSICS. 2005: 1320–23

    View details for DOI 10.1116/1.1878995

    View details for Web of Science ID 000230479600087

  • Using beam.flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Wistey, M. A., Bank, S. R., Yuen, H. B., Harris, J. S., Oye, M. M., Holmes, A. L. 2005; 23 (3): 460-464

    View details for DOI 10.1116/1.1881635

    View details for Web of Science ID 000229124000013

  • Nitrogen plasma optimization for high-quality dilute nitrides 13th International Conference on Molecular Beam Epitaxy (MBE XII) Wistey, M. A., Bank, S. R., Yuen, H. B., Bae, H., Harris, J. S. ELSEVIER SCIENCE BV. 2005: 229–33
  • Protecting wafer surface during plasma ignition using an arsenic cap 22nd North American Conference on Molecular Beam Epitaxy (NAMBE 2004) Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L. L., Gugov, T., Harris, J. S. A V S AMER INST PHYSICS. 2005: 1324–27

    View details for DOI 10.1116/1.1914820

    View details for Web of Science ID 000230479600088

  • The opportunities, successes and challenges for GaInNAsSb 13th International Conference on Molecular Beam Epitaxy (MBE XII) Harris, J. S. ELSEVIER SCIENCE BV. 2005: 3–17
  • Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 mu m 22nd North American Conference on Molecular Beam Epitaxy (NAMBE 2004) Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., Bae, H., Harris, J. S. A V S AMER INST PHYSICS. 2005: 1337–40

    View details for DOI 10.1116/1.1914825

    View details for Web of Science ID 000230479600091

  • Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy 22nd North American Conference on Molecular Beam Epitaxy (NAMBE 2004) Yuen, H. B., Wistey, M. A., Bank, S. R., Bae, H., Harris, J. S. A V S AMER INST PHYSICS. 2005: 1328–32

    View details for DOI 10.1116/1.1881592

    View details for Web of Science ID 000230479600089

  • Recombination, gain, band structure, efficiency, and reliability of 1.5-mu m GaInNAsSb/GaAs lasers JOURNAL OF APPLIED PHYSICS Goddard, L. L., Bank, S. R., Wistey, M. A., Yuen, H. B., Rao, Z. L., Harris, J. S. 2005; 97 (8)

    View details for DOI 10.1063/1.1873035

    View details for Web of Science ID 000228729500001

  • Monolithically integrated semiconductor fluorescence sensor for microfluidic applications SENSORS AND ACTUATORS B-CHEMICAL Thrush, E., Levi, O., Cook, L. J., Deich, J., Kurtz, A., Smith, S. J., Moerner, W. E., Harris, J. S. 2005; 105 (2): 393-399
  • Nearest-neighbor distributions in Ga1-xInxNyAs1-y and Ga1-xInxNyAs1-y-zSbz thin films upon annealing PHYSICAL REVIEW B Lordi, V., Yuen, H. B., Bank, S. R., Wistey, M. A., Harris, J. S., Friedrich, S. 2005; 71 (12)
  • Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance APPLIED PHYSICS LETTERS Kudrawiec, R., Sitarek, P., Misiewicz, J., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris, J. S. 2005; 86 (9)

    View details for DOI 10.1063/1.1873052

    View details for Web of Science ID 000228991600015

  • Mn- and Cr-doped InN: A promising diluted magnetic semiconductor material 3rd International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors Ney, A., Rajaram, R., Farrow, R. F., Harris, J. S., Parkin, S. S. SPRINGER/PLENUM PUBLISHERS. 2005: 41–46
  • Reconfigurable magnetologic computing using the spin flop switching of a magnetic random access memory cell APPLIED PHYSICS LETTERS Ney, A., Harris, J. S. 2005; 86 (1)

    View details for DOI 10.1063/1.1842858

    View details for Web of Science ID 000226701200088

  • 1.55 mu m GaInNAsSb lasers on GaAs Conference on Lasers and Electro-Optics (CLEO) Bank, S. R., Wistey, M. A., Goddard, L. L., Yuen, H. B., Bae, H. P., Harris, J. S. OPTICAL SOC AMERICA. 2005: 89–91
  • Growth and characterization of SiGe layers on Ge-lattice-matched substrates by MBE for long wavelength optical devices Conference on Lasers and Electro-Optics (CLEO) Kuo, Y. H., Yu, X., Fu, J., Solomon, G. S., Harris, J. S., Kamins, T. I. OPTICAL SOC AMERICA. 2005: 2137–2139
  • Photoelectronic analog-to-digital conversion: Sampling and quantizing at 100 Gs/s IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES Ioakeimidi, K., Leheny, R. F., Gradinaru, S., Bolton, P. R., Aldana, R., Ma, K., Clendenin, J. E., Harris, J. S., Pease, R. F. 2005; 53 (1): 336-342
  • InP based double heterojunction phototransistor with graded emitterbase junction and base-collector junction Conference on Semiconductor Photodetectors II Fu, J. X., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2005: 19–26

    View details for DOI 10.1117/12.591118

    View details for Web of Science ID 000229435900003

  • Linear differential electro-optic conversion of sampled voltage signals using a MSM and multiple quantum well modulators 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society Chin, H., Urata, R., Ma, K., Miller, D. A., Harris, J. S. IEEE. 2005: 57–58
  • Spectral shaping of electrically controlled MSM-based rapidly tunable photodetectors 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society Chen, R., Fu, J. X., Miller, D. A., Harris, J. S. IEEE. 2005: 55–56
  • Highly stable in-line semiconductor fiber laser Conference on Lasers and Electro-Optics (CLEO) Khalili, A., Harris, J. S. OPTICAL SOC AMERICA. 2005: 538–540
  • Near-infrared photodetection with molecular beam epitaxy grown extended InGaAs Symposium on Advanced Devices and Materials for Laser Remote Sensing held at the 2005 MRS Spring Meeting Fu, J. X., Yu, X. J., Kuo, Y. H., Harris, J. S. MATERIALS RESEARCH SOCIETY. 2005: 195–200
  • MBE growth of GaAs on Si through direct Ge buffers Symposium on Materials, Integration and Technology for Monolithic Instruments held at the 2005 MRS Spring Meeting Yu, X. J., Kuo, Y. H., Fu, J. X., Harris, J. S. MATERIALS RESEARCH SOCIETY. 2005: 77–81
  • In situ p-n junctions and gated devices in titanium-silicide nucleated Si nanowires ELECTROCHEMICAL AND SOLID STATE LETTERS Tang, Q., Kamins, T. I., Liu, X., Grupp, D. E., Harris, J. S. 2005; 8 (8): G204-G208
  • Novel electrically, controlled rapidly wavelength selective photodetection using MSMs IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Chen, R., Miller, D. A., Ma, K., Harris, J. S. 2005; 11 (1): 184-189
  • Reconfigurable magnetologic computing using the spin flop switching of a magnetic random access memory cell Appl. Phys. Lett. Ney, A., Harris, J., S. 2005; 11 (86): 13502-1-3
  • Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance Appl. Phys. Lett. Harris, J., S., Kudrawiec, R., Sitarek, P., Misiewicz, J., Bank, S., R., Yuen, H., B. 2005; 86 (091115-17)
  • Single ultrafast diffusive conduction based optoelectronic switch for multi-channel operation 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society Koklu, F. H., Demir, H. V., Yairi, M., Harris, J. S., Miller, D. A. IEEE. 2005: 734–735
  • Linear electro-optic conversion of sampled voltage signals using a low-temperature-grown GaAs MSM and a multiple quantum well modulato Chin, H., Urata, U., Chen, R., Miller, D., A. B., Ma, K., Harris Jr., J., S 2005
  • Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets Harris, J., S., Yuen, H., B., Kudrawiec, R., Ryczko, K., Bank, S., R., Wistey, M., A. 2005
  • Thick lattice-matched GaInNAs films in photodetector applications Conference on Semiconductor Photodetectors II Jackrel, D., Yuen, H., Bank, S., Wistey, M., Fu, J. X., Yu, X. J., Rao, Z. L., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2005: 27–34

    View details for DOI 10.1117/12.591315

    View details for Web of Science ID 000229435900004

  • Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy J. Vac. Sci. Techn. B Wistey, M., A., Bank, S., R., Yuen, H., B., Harris, J., S., Oye, M., M., Holmes, A., L. 2005; 3 (23): 460-4
  • Temperature Independence of the Spin Injection Efficiency of a MgO-based Tunnel Spin Injector Appl. Phys. Lett. Salis, G., Wang, R., Jiang, X., Shelby, R., M., Bank, S., R., Harris, J., S. 2005; 87: 2625031-3
  • Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells J. Appl. Phys. Harris, J., S., Kudrawiec, R., Motyka, M., Misiewicz, J., Yuen, H., B., Bank, S., R. 2005; 6 (98): 063527-31
  • MSM-based integrated CMOS wavelength-tunable optical receiver IEEE Photon. Techn. Lett. Chen, R., Chin, H., Miller, D., A. B., Ma, K., Harris, J., S. 2005; 6 (17): 1271-3
  • In situ p-n junctions and gated devices in titanium-silicide nucleated si nanowires Electrochem Solid-State Lett. Tang, Q., Kamins, T., I., Liu, X., Grupp, D., E., Harris, J., S. 2005; 8 (8): G204-8
  • Improved Optical Quality from GaNAsSb in the Dilute Sb Limit J. Appl. Phys. Harris, J., S., Yuen, H., B., Seong, M., J., Kudrawiec, R., Yoon, S., Bank, S., R. 2005; 11 (97): 113510-1-5
  • A single transverse-mode monolithically integrated long vertical-cavity surface-emitting laser IEEE Photon. Techn. Lett. Wiemer, M., W., Aldaz, R., I., Miller, D., A. B., Harris, J., S. 2005; 7 (17): 1366-8
  • Widely tunable difference frequency generation in a multi-grating orientation-patterned GaAs Conference on Lasers and Electro-Optics (CLEO) Levi, O., Kuo, P. S., Yu, X., Harris, J. S., Fejer, M. M., Bisson, S. E., Kulp, T. J., Bliss, D., Weyburne, D. OPTICAL SOC AMERICA. 2005: 1306–1308
  • MBE grown GaInNAs solar cells for multijunction applications Harris, J., S., Jackrel, D., Yuen, H., Fu, J., Bank, S., Yu, X. 2005
  • Fabrication and characterization of tightly confining AlGaAs waveguides and microcavities for nonlinear optical applications Harris, J., S., Scaccabarozzi, L., Wang, Z., Yu, X., Lee, M., M., Lau, W., T. 2005
  • Extended InGaAs/InGaAs quantum structures for near infrared photodetection beyond 1.9 µm Fu, J., Yu, X., Kuo, Y., H., Harris Jr., J., S. 2005
  • Differential gain and non-linear gain compression of GaInNAsSb/GaAs lasers at 1.5 mu m Conference on Lasers and Electro-Optics (CLEO) Goddard, L. L., Bank, S. R., Wistey, M. A., Yuen, H. B., Bae, H. P., Harris, J. S. OPTICAL SOC AMERICA. 2005: 86–88
  • Light-emitting diodes based on InP quantum dots in GaP(100) 9th Conference on Light-Emitting Diodes Hatami, F., Lordi, V., Harris, J. S., Masselink, W. T. SPIE-INT SOC OPTICAL ENGINEERING. 2005: 86–92

    View details for DOI 10.1117/12.591299

    View details for Web of Science ID 000228826900011

  • InP based double heterojunction phototransistor with graded emitter-base junction and base-collector junction Fu, J., X., Harris Jr., J., S. 2005
  • Highly stable in-line semiconductor fiber laser Khalili, A., Harris Jr., J., S. 2005
  • Differential Gain and Non-linear Gain Compression of GaInNAsSb/GaAs Lasers at 1.5µm Goddard, L., Bank, S., Wistey, M., Yuen, H., Bae, H., Harris, J., S. 2005
  • Red light-emitting diodes based on InP/GaP quantum dots J. Appl. Phys. Hatami, F., Lordi, V., Harris, J., S., Kostial, H., Masselink, W., T. 2005; 9 (97): 96106-1-3
  • On the temperature sensitivity of 1.5-µm GaInNAsSb lasers IEEE J. Select. Topics Quan. Electron. Bank, S., R., Goddard, L., L., Wistey, M., A., Yuen, H., B., Harris, J., S. 2005; 5 (11): 1089-98
  • Increase in spin injection efficiency of a CoFe/MgO(100) tunnel spin injector with thermal annealing Appl. Phys. Lett. Harris, J., S., Wang, R., Jiang, X., Shelby, R., M., Macfarlane, R., M., Parkin, S., S. P. 2005; 5 (86): 052901-3
  • Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100) Phys. Rev. Lett. Jiang, X., Wang, R., Shelby, R., M., Macfarlane, R., M., Bank, S., R., Harris, J., S. 2005; 5 (94): 056601/1-4
  • Efficient continuous wave second harmonic generation pumped at 1.55 µm in quasi-phase-matched AlGaAs waveguides Optics Express Yu, X., Scaccabarozzi, L., Harris, J., S., Kuo, P., S., Fejer, M., M. 2005; 26 (13): 10742-10753
  • Mid-IR continuum from an optical parametric generator based on orientation-patterned GaAs (OP-GaAs) Conference on Lasers and Electro-Optics (CLEO) Kuo, P. S., Vodopyanov, K. L., Fejer, M. M., Yu, X., Harris, J. S., Simanovskii, D. M., Bliss, D., Weyburne, D. OPTICAL SOC AMERICA. 2005: 1294–1296
  • (GaIn)(NAsSb): the challenges for long wavelength communications devices Harris Jr., J., S. 2005
  • Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy J. Vac. Sci. Techn. B Yuen, H., B., Wistey, M., A., Bank, S., R., Bae, H., P., Harris, J., S. 2005; 3 (23): 1328-32
  • Optical parametric oscillator based on orientation-patterned GaAs Conference on Integrated Optics - Devices, Materials and Technologies IX Vodopyanov, K. L., Levi, O., Kuo, P. S., Pinguet, T. J., Harris, J. S., Fejer, M. M., Gerard, B., Becouarn, L., Lallier, E. SPIE-INT SOC OPTICAL ENGINEERING. 2005: 129–135

    View details for DOI 10.1117/12.584599

    View details for Web of Science ID 000228895400015

  • Spectral shaping of electrically controlled MSM-based tunable photodetectors IEEE Photon. Techn. Lett. Chen, R., Fu, J., X., Miller, D., A.B., Harris, J., S. 2005; 10 (17): 2158-60
  • Self-aligning planarization and passivation for integration applications in III-V semiconductor devices IEEE Trans Semiconductor Manufacturing Demir, H., V., Zheng, J., F., Sabnis, V., A., Fidaner, O., Hanberg, J., Harris, J., S. 2005; 1 (18): 182-89
  • Protecting wafer surface during plasma ignition using an arsenic cap J. Vac. Sci. Techn. B Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Gugov, T., Harris, J., S. 2005; 3 (23): 1324-7
  • Novel electrically controlled rapidly wavelength selective photodetection using MSMs IEEE J. Selected Topics in Quantum Electron. Chen, R., Miller, D., A. B., Ma, K., Harris, J., S. 2005; 1 (11): 184-89
  • High performance GaInNAsSb/GaAs lasers at 1.5 mu m Conference on Novel In-Plane Semiconductor Lasers IV Goddard, L. L., Bank, S. R., Wistey, M. A., Yuen, H. B., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2005: 180–191

    View details for DOI 10.1117/12.591447

    View details for Web of Science ID 000228824000020

  • Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs band offsets Symposium on Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices held at the 2005 MRS Spring Meeting Yuen, H. B., Kudrawiec, R., Ryczko, K., Bank, S. R., Wistey, M. A., Bae, H. P., Misiewicz, J., Harris, J. S. MATERIALS RESEARCH SOCIETY. 2005: 105–111
  • Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 µm J. Vac. Sci. Techn. B Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L., L., Bae, H., P., Harris, J., S. 2005; 3 (23): 1324-27
  • Mn- and Cr-doped InN: A promising diluted magnetic semiconductor material J. Superconductivity Ney, A., Rajaram, R., Farrow, R., F. C., Harris, J., S., Parkin, S., S. P. 2005; 1 (18): 41-4
  • Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides Appl. Phys. Lett. Harris, J., S., Oye, M., M., Wistey, M., A., Reifsnider, J., M., Agarwal, S., Mattord, T., J. 2005; 22 (86): 221902-1-3
  • Intimate monolithic integration of chip-scale photonic circuits IEEE J. Sel. Topics Quant. Electron. Sabnis, V., A., Demir, H., V., Fidaner, O., Zheng, J., F., Harris, J., S., Miller, D., A. B. 2005; 6 (11): 1255-65
  • Growth and magnetism of Cr-doped InN Appl.Phys. Lett. Rajaram, R., Ney, A., Farrow, R., F. C., Solomon, G., Harris Jr., J., S., Parkin, S., S. P. 2005; 6 (87): 1725111-3
  • Effects of growth temperature on the structural and optical properties of 1.55 µm GaInNAsSb quantum wells grown on GaAs Appl. Phys. Lett. Bank, S., R., Yuen, H., B., Wistey, M., A., Lordi, V., Bae, H., P., Harris, J., S. 2005; 2 (87): 21908-1-3
  • A comparison of lattice-matched GaInNAs and metamorphic InGaAs photodetector devices Symposium on Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices held at the 2005 MRS Spring Meeting Jackrel, D. B., Yuen, H. B., Bank, S. R., Wistey, M. A., Yu, X. J., Fu, J. X., Rao, Z. L., Harris, J. S. MATERIALS RESEARCH SOCIETY. 2005: 271–276
  • Multifunctional integrated photonic switches IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Demir, H. V., Sabnis, V. A., Fidaner, O., Zheng, J. F., Harris, J. S., Miller, D. A. 2005; 11 (1): 86-96
  • High-performance GaInNAsSb/GaAs lasers at 1.5 µm Goddard, L., L., Bank, S., R., Wistey, M., A., Yuen, H., B., Harris Jr., J., S. 2005
  • Fabrication of a carbon nanotube protruding electrode array for a retinal prosthesis Wang, K., Dai, H., Fishman, H., A., Harris Jr., J., S. 2005
  • 1.55µm GaInNAsSb lasers on GaAs Bank, S., Wistey, M., Goddard, L., Yuen, H., Bae, H., Harris Jr., J., S. 2005
  • Recombination, gain, band structure, efficiency, and reliability of 1.5 µm GaInNAsSb/GaAs lasers J. Appl. Phys. Goddard, L., L., Bank, S., R., Wistey, M., A., Yuen, H., B., Rao, Z., Harris Jr., J., S. 2005; 8 (97): 083101-16
  • Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1.5 µm: The energy level structure and the Stokes shift J. Appl. Phys. Harris, J., S., Kudrawiec, R., Yuen, H., B., Ryczko, K., Misiewicz, J., Bank, S., R. 2005; 97: 53515
  • Nearest-neighbor distributions in Ga(1-x)InxNyAs(1-y) and Ga(1-x)InxNyAs(1-y-z)Sbz thin films upon annealing Phys. Rev. B. Lordi, V., Yuen, H., B., Bank, S., R., Wistey, M., A., Harris, J., S., Friedrich, S. 2005; 12 (71): 125309-18
  • Side-coupled fibre semiconductor laser Electron. Lett. Khalili, A., Harris, J., S. 2005; 20 (41): 1128-30
  • Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs J. Vac. Sci. Techn. B Bank, S., R., Wistey, M., A., Yuen, H., B., Lordi, V., Gambin, V., Harris, J., S. 2005; 3 (23): 1320-3
  • Conductance fluctuations and partially broken spin symmetries in quantum dots Phys. Rev. B Zumbuhl, D., M., Miller, J., B., Marcus, C., M., Goldhaber-Gordon, D., Harris, J., S., Campman, K. 2005; 8 (72): 81305
  • Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3-1.55 mu m JOURNAL OF APPLIED PHYSICS Yuen, H. B., Bank, S. R., Wistey, M. A., Harris, J. S., Moto, A. 2004; 96 (11): 6375-6381

    View details for DOI 10.1063/1.1807028

    View details for Web of Science ID 000225300800066

  • Multicolor InGaAs quantum-dot infrared photodetectors IEEE PHOTONICS TECHNOLOGY LETTERS Kim, S. M., Harris, J. S. 2004; 16 (11): 2538-2540
  • Multispectral operation of self-assembled InGaAs quantum-dot infrared photodetectors APPLIED PHYSICS LETTERS Kim, S. M., Harris, J. S. 2004; 85 (18): 4154-4156

    View details for DOI 10.1063/1.1810208

    View details for Web of Science ID 000224894900066

  • GaInNAs(Sb) long wavelength communications lasers Symposium on Dilute Nitride and Related Mismatched Semiconductor Alloys held at the 2004 Spring Meeting of the EMRS Harris, J. S., Bank, S. R., Wistey, M. A., Yuen, H. B. INST ENGINEERING TECHNOLOGY-IET. 2004: 407–16
  • High-performance 1.5 mu m GaInNAsSb lasers grown on GaAs ELECTRONICS LETTERS Bank, S. R., Wistey, M. A., Goddard, L. L., Yuen, H. B., Bae, H. P., Harris, J. S. 2004; 40 (19): 1186-1187
  • Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate OPTICS EXPRESS Aldaz, R. I., Wiemer, M. W., Miller, D. A., Harris, J. S. 2004; 12 (17): 3967-3971

    Abstract

    We present a fully monolithically integrated long vertical cavity surface emitting laser using an InGaAs/GaAs/AlGaAs gain medium directly bonded to a glass substrate with a concave micromirror. The lasing wavelength is 980nm with a threshold of 20mA for a 52microm mesa, differential quantum efficiency of 58%, and maximum output power of 39mW.

    View details for Web of Science ID 000223469000011

    View details for PubMedID 19483933

  • Optical parametric oscillation in quasi-phase-matched GaAs OPTICS LETTERS Vodopyanov, K. L., Levi, O., Kuo, P. S., Pinguet, T. J., Harris, J. S., Fejer, M. M., Gerard, B., Becouarn, L., Lallier, E. 2004; 29 (16): 1912-1914

    Abstract

    We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilizes an all-epitaxially-grown orientation-patterned GaAs crystal that is 0.5 mm thick, 5 mm wide, and 11 mm long, with a domain reversal period of 61.2 microm. Tuning either the near-IR pump wavelength between 1.8 and 2 microm or the temperature of the GaAs crystal allows the mid-IR output to be tuned between 2.28 and 9.14 microm, which is limited only by the spectral range of the OPO mirrors. The pump threshold of the singly resonant OPO is 16 microJ for the 6-ns pump pulses, and the photon conversion slope efficiency reaches 54%. We also show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.

    View details for Web of Science ID 000223074600026

    View details for PubMedID 15357357

  • Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300-1600 nm APPLIED PHYSICS LETTERS Lordi, V., Yuen, H. B., Bank, S. R., Harris, J. S. 2004; 85 (6): 902-904

    View details for DOI 10.1063/1.1777825

    View details for Web of Science ID 000223109500017

  • Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches IEEE JOURNAL OF QUANTUM ELECTRONICS Ma, K., Urata, R., Miller, D. A., Harris, J. S. 2004; 40 (6): 800-804
  • Low-threshold continuous-wave 1.5-mu m GaInNAsSb lasers grown on GaAs IEEE JOURNAL OF QUANTUM ELECTRONICS Bank, S. R., Wistey, M. A., Goddard, L. L., Yuen, H. B., Lordi, V., Harris, J. S. 2004; 40 (6): 656-664
  • Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy 21st North American Conference on Molecular Beam Epitaxy (NAMBE 2003) Gugov, T., Gambin, V., Wistey, M., Yuen, H., Bank, S., Harris, J. S. A V S AMER INST PHYSICS. 2004: 1588–92

    View details for DOI 10.1116/1.1650853

    View details for Web of Science ID 000222481400146

  • Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy 21st North American Conference on Molecular Beam Epitaxy (NAMBE 2003) Yu, X. J., Kuo, P. S., Ma, K., Levi, O., Fejer, M. M., Harris, J. S. A V S AMER INST PHYSICS. 2004: 1450–54

    View details for DOI 10.1116/1.1669670

    View details for Web of Science ID 000222481400113

  • Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 mu m 21st North American Conference on Molecular Beam Epitaxy (NAMBE 2003) Fu, J. X., Bank, S. R., Wistey, M. A., Yuen, H. B., Harris, J. S. A V S AMER INST PHYSICS. 2004: 1463–67

    View details for DOI 10.1116/1.1691411

    View details for Web of Science ID 000222481400116

  • GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 mu m 21st North American Conference on Molecular Beam Epitaxy (NAMBE 2003) Wistey, M. A., Bank, S. R., Yuen, H. B., Goddard, L. L., Harris, J. S. A V S AMER INST PHYSICS. 2004: 1562–64

    View details for DOI 10.1116/1.1714940

    View details for Web of Science ID 000222481400140

  • Fabrication and characterization of a carbon nanotube microelectrode array for retinal prostheses Annual Meeting of the Association-for-Research-in-Vision-and-Ophthalmology Wang, K., Dai, H., Leng, T., Mehenti, N. Z., Harris, J. S., Fishman, H. A. ASSOC RESEARCH VISION OPHTHALMOLOGY INC. 2004: U379–U379
  • High-speed optical switching based on diffusive conduction in an optical waveguide with surface-normal optical control JOURNAL OF APPLIED PHYSICS Sabnis, V. A., Demir, H. V., Yairi, M. B., Harris, J. S., Miller, D. A. 2004; 95 (5): 2258-2263

    View details for DOI 10.1063/1.1643789

    View details for Web of Science ID 000189139600009

  • High-frequency modulation characteristics of 1.3-mu m InGaAs quantum dot lasers IEEE PHOTONICS TECHNOLOGY LETTERS Kim, S. M., Wang, Y., Keever, M., Harris, J. S. 2004; 16 (2): 377-379
  • Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting OPTICS EXPRESS Demir, H. V., Sabnis, V. A., Fidaner, O., Harris, J. S., Miller, D. A., Zheng, J. F. 2004; 12 (2): 310-316

    Abstract

    We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength conversion across 45 nm between 1525 nm and 1570 nm, and dual-wavelength broadcasting over 20 nm between 1530 nm and 1565 nm, spanning the entire C-band with >10dB RF-extinction ratio and using 3.1-6.7 mW absorbed optical power at 1.25 Gb/s.

    View details for Web of Science ID 000188383200011

    View details for PubMedID 19471539

  • Reduced monomolecular recombination in GaInNAsSb/GaAs lasers at 1.5 mu m 17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society Goddard, L. L., Bank, S. R., Wistey, M. A., Yuen, H. B., Bae, H. P., Harris, J. S. IEEE. 2004: 144–145
  • Side-coupled in-line fiber-semiconductor laser Conference on Integrated Optics - Devices, Materials and Technology VIII Khalili, A., Wistey, M. A., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2004: 159–166

    View details for DOI 10.1117/12.532111

    View details for Web of Science ID 000222345000017

  • Novel planarization and passivation in the integration of III-V semiconductor devices Conference on Optoelectronic Integrated Circuits VI Zheng, J. F., Hanberg, J., Demir, H. V., Sabnis, V. A., Fidaner, O., Harris, J. S., Miller, D. A. SPIE-INT SOC OPTICAL ENGINEERING. 2004: 81–91

    View details for DOI 10.1117/12.539696

    View details for Web of Science ID 000222941800009

  • Photoelectronic analog-to-digital conversion: Sampling and quantizing at 100 Gs/s IEEE Trans. Microwave Theory Techn. Harris, J., S., Ioakeimidi, K., Leheny, R., F., Gradinaru, S., Bolton, P., R., Aldana, R. 2004; 1 (53): 336-42
  • Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate Optics Express Aldaz, R., I., Wiemer, M., W., Miller, D., A. B., Harris Jr., J., S. 2004; 17 (12): 3967-71
  • Low-threshold continuous-wave 1.5-µm GaInNAsSb lasers grown on GaAs IEEE J. Quantum Electron. Bank, S., R., Wistey, M., A., Goddard, L., L., Yuen, H., B., Lordi, V., Harris, J., S. 2004; 6 (40): 656-64
  • A new route to zero-barrier metal source/drain MOSFETs IEEE Trans. Nanotechnology Connelly, D., Faulkner, C., Grupp, D., E., Harris, J., S. 2004; 1 (3): 98-104
  • Monolithic integration of GaAs devices with completely fabricated Si CMOS Ma, K., Chen, R., Miller, D., A. B., Harris Jr., J., S. 2004
  • Low threshold, CW, room temperature 1.50 µm GaAs-based lasers Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L., L., Harris Jr., J., S. 2004
  • Integrated semiconductor bio-fluorescence sensor integrated on micro-fluidic platform Thrush, E., Levi, O., Cook, L., J., Harris Jr., J., S., Smith, S., J 2004
  • GaNAs/GaAsSb type II active regions for 1.3-1.5 µm operation Yang, H., Lordi, V., Harris, J., S. 2004
  • Growth of III-V Nitrides by Pulsed Laser Deposition (Optoelectronic Properties of Semiconductors and Superlattices; III-V Nitride Semiconductors: Growth and Substrate Issues Huang, T., F., Harris Jr., J., S. edited by Omar, M., Ian, M., Breach, F. G. 2004
  • Widely tunable Al 2O3-GaAs DBR filters with variable tuning characteristics IEEE J. Selected Topics Quantum Electronics Lin, C., C., Fu, J., X., Harris, J., S. 2004; 3 (10): 614-21
  • A broadly tunable high-resolution IR cavity ring-down spectrometer based on difference frequency generation in orientation-patterned GaAs Bisson, S., E., Kulp, T., J., Levi, O., Harris, J., Fejer, M., M. 2004
  • Integrated semiconductor vertical-cavity surface-emitting lasers and PIN photodetectors for biomedical fluorescence sensing IEEE J Quantum Electron. Harris, J., S., Thrush, E., Levi, O., Ha, W., Carey, G., Cook, L., J. 2004; 5 (40): 491-8
  • High-speed, optical switching based on diffusive conduction in an optical waveguide with surface-normal optical control J. Appl Phys. Sabnis, V., A., Demir, H., V., Yairi, M., B., Harris Jr., J., S., Miller, D., A. B. 2004; 5 (95): 2258-63
  • High-performance 1.5 µm GalnNAsSb lasers grown on GaAs Electron. Lett. Bank, S., R., Wistey, M., A., Goddard, L., L., Yuen, H., B., Bae, H., P., Harris, J., S. 2004; 19 (40): 1186-7
  • High-frequency modulation characteristics of 1.3-µm InGaAs quantum dot lasers IEEE Photon. Technol. Lett. Kim, S., M., Wang, Y., Keever, M., Harris, J., S. 2004; 2 (16): 377-379
  • Side-coupled in-line fiber-semiconductor laser Khalili, A., Wistey, M., A., Harris Jr., J., S. 2004
  • Novel scalable wavelength-converting crossbar Demir, H., V., Sabnis, V., A., Fidaner, O., Harris Jr., J., S., Miller, D., A. B., Zheng, J., F. 2004
  • Monolithically integrated long vertical cavity surface laser incorporating a concave micromirror on a glass substrate Aldaz, R., I., Wiemer, M., W., Miller, D., A. B., Harris Jr., J., S. 2004
  • GaInNAs(Sb) long wavelength communications lasers Harris, J., S., S., J., S., M., R., Bank, H., A., Wistey 2004
  • Electrically-reconfigurable integrated photonic switches Fidaner, O., Demir, H., V., Sabnis, V., A., Harris Jr., J., S. 2004
  • The temperature sensitivity of GaAs-based 1.5 µm GaInNAsSb lasers Bank, S., R., Goddard, L., L., Wistey, M., A., Yuen, H., B., Harris Jr., J., S. 2004
  • Measurements of intrinsic properties of high power CW single quantum well GaInNAsSb/GaAs lasers at 1.5 µm Goddard, L., L., Bank, S., R., Wistey, M., A., Yuen, H., B., Harris Jr., J., S. 2004
  • GaInNAs and GaInNAsSb Long Wavelength Lasers, Chapter Physics and Applications of Dilute Nitrides Harris Jr., J., S. edited by Buyanova, I., Chen, W. Taylor and Francis, London, U. K.. 2004: 395–433
  • Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches IEEE J. Quantum Electron. Ma, K., Urata, R., Miller, D., A. B., Harris, J., S. 2004; 6 (40): 800-5
  • GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 µm J. Vac. Sci. Technol. B Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Harris, J., S. 2004; 3 (22): 1562-64
  • Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 µm Electron. Lett. Harris, J., S., Gollub, D., Kamp, M., Forchel, A., Seufert, J., Bank, S., R. 2004; 23 (40): 1487-8
  • Comparison of GaNAsSb and GaNAs as Quantum Well Barriers for GaInNAsSb Optoelectronic Devices Operating at 1.3-1.55 µm J. Appl. Phys. Yuen, H., B., Bank, S., R., Wistey, M., A., Harris Jr., J., S., Moto, A. 2004; 11 (96): 6375-81
  • A broadly tunable, high resolution IR cavity ring-down spectrometer based on difference frequency generation in orientation-patterned GaAs Conference on Nonlinear Fequency Generation and Conversion Bisson, S. E., Kulp, T. J., Levi, O., Harris, J., Fejer, M. M. SPIE-INT SOC OPTICAL ENGINEERING. 2004: 112–116

    View details for DOI 10.1117/12.531730

    View details for Web of Science ID 000222773500014

  • Structural characterization of molecular beam epitaxy grown GaInNAs and GaInNAsSb quantum wells by transmission electron microscopy Gugov, T., Wistey, M., Yuen, H., Bank, S., Harris Jr., J., S. 2004
  • Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 µm Goddard, L., L., Bank, S., R., Wistey, M., S., Yuen, H., B., Bae, H., P., Harris Jr., J., S. 2004
  • Novel planarization and passivation in the integration of III-V semiconductor devices Zheng, J., F., Hanberg, P., J., Demir, H., V., Sabnis, V., A., Fidaner, O., Harris Jr., J., S. 2004
  • Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm Lordi, V., Yuen, H., B., Bank, S., R., Wistey, M., A., Harris Jr., J., S. 2004
  • The Use of Transmission Electron Microscopy (TEM) in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by MBE J. Vac. Sci. Technol. B Gugov, T., Gambin, V., Wistey, M., Yuen, H., Bank, S., Harris Jr., J., S. 2004; 3 (22): 1588-92
  • Multispectral operation of self-assembled InGaAs quantum-dot infrared photodetectors Appl. Phys. Lett. Kim, S., M., Harris, J., S. 2004; 18 (85): 4154-56
  • Laser background characterization in a monolithically integrated bio-fluorescence sensor Harris, J., S., Thrush, E., Levi, O., Cook, L., J., Deich, J., Smith, S., J 2004
  • Tightly confining AlGaAs waveguides and microcavities for optical frequency conversion Conference on Integrated Optics - Devices, Materials and Technology VIII Scaccabarozzi, L., Wang, Z., Yu, X. J., Lau, W. T., Yanik, M. F., Fan, S. H., Fejer, M. M., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2004: 111–119

    View details for DOI 10.1117/12.532124

    View details for Web of Science ID 000222345000011

  • Scalable wavelength-converting crossbar switches. IEEE Photon. Techn. Lett. Demir, H., V., Sabnis, V., A., Zheng, J., F., Fidaner, O., Harris Jr., J., S., B.Miller, D., A. 2004; 10 (16): 2305-7
  • Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300-1600 nm Appl. Phys. Lett. Lordi, V., Yuen, H., B., Bank, S., R., Harris, J., S. 2004; 6 (85): 902-4
  • Orbital effects of in-plane magnetic fields probed by mesoscopic conductance fluctuations Phys. Rev. B Zumbuhl, D., M., Miller, J., B., Marcus, C., M., Fal'ko, V., I., Jungwirth, T., Harris, J., S. 2004; 12 (69): 121305
  • Optically-controlled electroabsorption modulators for unconstrained wavelength conversion Appl. Phys. Lett. Sabnis, V., A., Demir, H., V., Fidaner, O., Harris Jr., J., S., Miller, D., A. B., Zheng, J., F. 2004; 4 (84): 469-471
  • Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy Appl. Phys. Lett. Ramsteiner, M., Jiang, D., S., Harris, J., S., Ploog, K., H. 2004; 11 (84): 1859-61
  • Fabrication and characterization of a carbon nanotube microelectrode array for retinal prostheses Investigative Ophthalmology & Visual Science 45 Wang, K., Dai, H., Leng, T., Mehenti, N., Z., Harris, J., S., Fishman, H., A. 2004; suppl.2 (45): U379
  • The role and suppression of carrier leakage in 1.5 µm GaInNAsSb/GaAs lasers M., S., R., H., A., Wistey, L., B., Yuen, J., L., Goddard, Harris, S. 2004
  • Progress towards high power 1.5 µm GaInNAsSb/GaAs lasers for Raman amplifiers Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L., L., Harris Jr., J., S. 2004
  • Photodiode-driven quantum-well modulators for C-band wavelength conversion and broadcasting Demir, H., V., Fidaner, O., Sabnis, V., A., Harris, J., S., Miller, D., A. B., Zheng, J., F. 2004
  • Novel electrically controlled rapidly wavelength selective photodetection using MSMs Chen, R., Miller, D., A. B., Ma, K., Harris Jr., J., S. 2004
  • Optical parametric oscillator based on microstructured GaAs Conference on Solid State Laser Technologies and Femtosecond Phenomena Vodopyanov, K. L., Levi, O., Kuo, P. S., Pinguet, T. J., Harris, J. S., Fejer, M. M., Gerard, B., Becouarn, L., Lallier, E. SPIE-INT SOC OPTICAL ENGINEERING. 2004: 63–69

    View details for DOI 10.1117/12.578449

    View details for Web of Science ID 000226769800008

  • GaInNAsSb/GaNAs VCSELs at 1.46 µm Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Harris Jr., J., S. 2004
  • MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys Dilute Nitride Materials and Devices Harris Jr., J., S. edited by Henini, M. Elsevier, Amsterdam, The Netherlands. 2004: 502–578
  • Long-Wavelength Dilute Nitride-Antimonide Lasers Dilute Nitride Materials and Devices Harris Jr., J., S. edited by Henini, M. Elsevier, Amsterdam, The Netherlands. 2004: 1–92
  • Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 µm J. Vac. Sci. Technol. B Fu, J., X., Bank, S., R., Wistey, M., A, Yuen, H., B., Harris, J., S. 2004; 3 (22): 1463-67
  • Single-phase growth studies of GaP on Si by solid-source MBE J. Vac. Sci. Technol. B Yu, X., Kuo, P., S., Ma, K., Levi, O., Fejer, M., M., Harris Jr., J., S. 2004; 3 (22): 1450-54
  • Multicolor InGaAs quantum-dot infrared photodetectors IEEE Photon. Technol. Lett. Kim, S., M., Harris, J., S. 2004; 11 (16): 2538-40
  • Multi-spectral operation of InGaAs quantum dot infrared photodetectors and infrared sensors applications Kim, S., Harris Jr., J., S. 2004
  • Structural characterization of molecular beam epitaxy grown GaInNAs and GaInNAsSb quantum wells by transmission electron microscopy Symposium on New Materials for Microphotonics held at the 2004 MRS Spring Meeting Gugov, T., Wistey, M., Yuen, H., Bank, S., Harris, J. S. MATERIALS RESEARCH SOCIETY. 2004: 267–272
  • Greater than 10(6) optical isolation in integrated optoelectronic fluorescence sensor. Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Conference Thrush, E., Levi, O., Cook, L., Smith, S., Harris, J. 2004; 3: 2080-2081

    Abstract

    Integrated optoelectronic sensors hold much potential for bio-medical applications. Our work focuses on the use of semiconductor lasers, photodetectors and filters to create a monolithically integrated near-infrared fluorescence sensor. Previous research has found that the close integration of these components results in large laser background levels from spontaneous emission emitted from the side of the laser and limits sensor sensitivity. This work presents an improved optical blocking structure between the laser and photodetector which results in greater than 10(6) optical isolation. This level of isolation will allow for sensitive fluorescence detection and shows that optoelectronic components can be successfully integrated for such purposes.

    View details for PubMedID 17272131

  • Low threshold, CW, room temperature 1.50 mu m GaAs-based lasers 30th International Symposium on Compound Semiconductors Bank, S. R., Wistey, M. A., Yuen, H. B., Goddard, L. L., Harris, J. S. IEEE. 2004: 180–184
  • Integrated bio-fluorescence sensor 16th International Symposium on Microscale Separation and Analysis Thrush, E., Levi, O., Ha, W., Wang, K., Smith, S. J., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 103–10

    Abstract

    Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.

    View details for DOI 10.1016/S0021-9673(03)01361-X

    View details for PubMedID 14604112

  • Nearest-neighbor configuration in (GaIn)(NAs) probed by X-ray absorption spectroscopy PHYSICAL REVIEW LETTERS Lordi, V., Gambin, V., Friedrich, S., Funk, T., Takizawa, T., Uno, K., Harris, J. S. 2003; 90 (14)

    Abstract

    Ga(1-x)In(x)N(y)As(1-y) is a promising material system for the fabrication of inexpensive "last-mile" optoelectronic components. However, details of its atomic arrangement and the relationship to observed optical properties is not fully known. Particularly, a blueshift of emission wavelength is observed after annealing. In this work, we use x-ray absorption fine structure to study the chemical environment around N atoms in the material before and after annealing. We find that as-grown molecular beam epitaxy material consists of a nearly random distribution of atoms, while postannealed material shows segregation of In toward N. Ab initio simulations show that this short-range ordering creates a more thermodynamically stable alloy and is responsible for blueshifting the emission.

    View details for DOI 10.1103/PhysRevLett.90.145505

    View details for Web of Science ID 000182320100032

    View details for PubMedID 12731929

  • 1.5 mu m GaInNAs(Sb) lasers grown on GaAs by MBE 12th International Conference on Molecular Beam Epitaxy (MBE-XII) Bank, S., Ha, W., Gambin, V., Wistey, M., Yuen, H., Goddard, L., Kim, S., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 367–71
  • The role of Sb in the MBE growth of (GaIn)(NAsSb) 12th International Conference on Molecular Beam Epitaxy (MBE-XII) Volz, K., Gambin, V., Ha, W., Wistey, M. A., Yuen, H., Bank, S., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 360–66
  • Structural changes on annealing of MBE grown (Ga, In) (N, As) as measured by X-ray absorption fine structure 12th International Conference on Molecular Beam Epitaxy (MBE-XII) Gambin, V., Lordi, V., Ha, W., Wistey, M., Takizawa, T., Uno, K., Friedrich, S., Harris, J. ELSEVIER SCIENCE BV. 2003: 408–11
  • Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBE 12th International Conference on Molecular Beam Epitaxy (MBE-XII) Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 662–65
  • Heavy arsenic doping of silicon by molecular beam epitaxy 12th International Conference on Molecular Beam Epitaxy (MBE-XII) Liu, X., Tang, Q., Kamins, T. I., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 651–56
  • Improved dispersion relations for GaAs and applications to nonlinear optics J. Appl. Phys. Harris, J., S., Skauli, T., Kuo, P., S., L.Vodopyanov, K., Pinguet, T., J., Levi, O. 2003; 10 (94): 6447-55
  • Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy Phys. Rev. Lett. Harris, J., S., Lordi, V., Gambin, V., Friedrich, S., Funk, T., Takizawa, T. 2003; 14 (90): 145505
  • High throughput integration of optoeletronics devices for biochip fluorescent detection SPIE-Photonics West, 4982, Microfludics, BioMEMS, and Medical Microsystems Thrush, E., Levi, O., Wang, K., Wistey, M., A., Harris Jr., J., S., Smith, S., J. 2003; 4982: 162-169
  • 1.3~1.55 µm GaInNAsSb lasers Acta Optica Sinica Harris, J., S. 2003; suppl., no.1 (23): 313-14
  • Standing-wave microspectrometer for multiple fluorescence detection Harris, J., S., Bhalotra, S., R., Kung, H., L., Fu, J., Helman, N., C., Levi, O. 2003
  • Novel, optically-controlled optical switch based on intimate integration of a surface-normal photodiode and waveguide electroabsorption modulator for wavelength conversion Demir, H., V., Sabnis, V., A., Fidaner, O., Latif, S., Harris Jr., J., S., Miller, D., A. B. 2003
  • Long wavelength GaInNAs(Sb) in-line fiber photodetector on GaAs Yang, H., Khalili, A., Wistey, M., Bank, S., Yuen, H., Harris, J. 2003
  • Integrated semiconductor fluorescence sensor for portable bio-medical diagnostics Harris, J., S., Thrush, E., Levi, O., Ha, W., Kurtz, A., Hwang, J. 2003
  • Low-threshold CW GaInNAsSb/GaAs laser at 1.49 um Electron. Lett. Bank, S., Wistey, M., Yuen, H., Goddard, L., Ha, W., Harris Jr, J., S. 2003; 20 (39): 1445-6
  • High intensity 1.3 – 1.6 mm luminescence and structural changes on anneal from MBE grown (Ga, In)(N, As, Sb) J. Crystal Growth Harris, J., S., Gambin, V., Lordi, V., Ha, W., Wistey, M., Volz, K. 2003; 1-4 (251): 408-411
  • Low Temperature Growth of GaAs on Si Substrates for Ultra-fast Photoconductive Switches Ma, K., Urata, R., Miller, D., A. B., Harris Jr., James, S. 2003
  • S. R. Bank, M.A. Wistey, H. B. Yuen, L.L. Goddard, J. S. Harris, “Low threshold, CW, room temperature 1.49 µm GaAs-based lasers, Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L.L., Harris Jr., J., S. 2003
  • A 100Gs/s Photoelectronic A/D converter Harris, J., S., Ioakeimidi, K., Leheny, R., Gradinaru, S., Ma, K., Aldana, R. 2003
  • 1.5µm GaInNAs(Sb) lasers grown on GaAs by MBE J. Crystal Growth Harris, J., S., Bank, S., Ha, W., Gambin, V., Wistey, M., Yuen, H. 2003; 1-4 (251): 367-371
  • Laser Background Rejection Optimization in Integrated Optoelectronic Fluorescence Sensor Harris, J., S., Thrush, E., Levi, O., Ha, W., Carey, G., Cook, L., J. 2003
  • Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55 um J. Crystal Growth Yu, X., Scaccabarozzi, L., Levi, O., Pinguet, T., J., Fejer, M., M., Harris Jr., J., S. 2003; 251: 794-799
  • Optically-switched dual-diode electroabsorption modulators Integrated Photonics Research, OSA Technical Digest, Optical Society of America, Washington, DC Sabnis, V., A., Demir, H., V., Fidaner, O., Harris Jr., J., S., Miller, D., A. B., Zheng, J., F. 2003: 12-14
  • Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source Virtual J. Nanoscale Science & Techn. Harris, J., S., Jiang, X., Wang, R., van Dijken, S., Shelby, R., Macfarlane, R. 2003; 1 (8)
  • Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source Phys. Rev. Lett. Harris, J., S., Jiang, X., Wang, R., van Dijken, S., Shelby, R., Macfarlane, R. 2003; 90: 256603
  • Monolithic, GaInNAsSb VCSELs at 1.46 µm on GaAs by MBE Electron. Lett. Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Harris, J., S. 2003; 25 (39): 1822-3
  • GaInNAsSb long wavelength lasers on GaAs Harris Jr., J., S. 2003
  • Standing-wave microsensor for adaptive analysis of spectral coherence Harris, J., S., Bhalotra, S., R., Kung, H., L., Fu, J., Helman, N., C., Levi, O. 2003
  • GaInNAsSb based long-wavelength lasers Harris Jr., J., S. 2003
  • Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS IEEE J. Lightwave Techn. Harris, J., S., Urata, R., Nathawad, Y., L., Takahashi, R., Ma, K., Miller, D., A. B. 2003; 12 (21): 3104-15
  • Twinning in TiSi2-island catalyzed Si nanowires grown by gas-source molecular-beam epitaxy APPLIED PHYSICS LETTERS Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. 2002; 81 (13): 2451-2453

    View details for DOI 10.1063/1.1509096

    View details for Web of Science ID 000178037600045

  • Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates 10th International Conference on Modulated Semiconductor Structures Kamins, T. I., Williams, R. S., Hesjedal, T., Harris, J. S. ELSEVIER SCIENCE BV. 2002: 995–98
  • GaInNAs material properties for long wavelength opto-electronic devices Conference on Progress in Semiconductor Materials for Optoelectron Applications held at the 2001 MRS Fall Meeting Gambin, V., Ha, W., Wistey, M., Kim, S., Harris, J. S. MATERIALS RESEARCH SOCIETY. 2002: 333–341
  • Ti-island-catalyzed Si nanowire growth by gas-source MBE: Morphology and twinning Symposium on Functional Nanostructured Materials through Multiscale Assembly and Novel Patterning Techniques held at the 2002 MRS Spring Meeting Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. MATERIALS RESEARCH SOCIETY. 2002: 235–240
  • A 1.5 µm GaInNAs(Sb) laser grown on GaAs by MBE Harris, J., S., Ha, W., Gambin, V., Bank, S., Wistey, M., Yuen, H. 2002
  • Measurement of nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second harmonic generation Opt. Lett. Harris, J., S., Skauli, T., Vodopyanov, K., L., Pinguet, T., J., Schober, A., Levi, O. 2002; 27: 628-630
  • Difference-frequency generation of 8µm radiation in orientation-patterned GaAs crystal Opt. Lett. Levi, O., Pinguet, T., J., Skauli, T., Eyres, L., A., Parameswaran, K., R., Harris Jr., J., S. 2002; 23 (27): 2091—2093
  • Integrated semiconductor fluorescent detection system for biochip and biomedical applications Thrush, E., Levi, O., Wang, K., Wistey, M., Harris, J., S., Smith, S., J. 2002
  • Standing-wave Fourier transform spectrometer based on integrated MEMS mirror and thin-film photodetector IEEE J. Select. Topics Quantum Elect. Kung, H., L., Bhalotra, S., R., Mansell, J., D., Miller, D., A. B., Harris, J., S. 2002; 1 (8): 98-105
  • Electron traps in MBE Ga(A,N) layers grown by molecular beam epitaxy Appl. Phys. Lett. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2002; 12 (80): 2120-2122
  • Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM IEEE Photon. Techn. Lett. Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris, J., S. 2002; 5 (15): 724-6
  • Long-wavelength GaInNAs(Sb) lasers on GaAs IEEE J. Quant. Electron. Harris, J., S., Ha, W., Gambin, V., Bank, S., Wistey, M., Yuen, H. 2002; 38: 1260 –1267
  • GaInNAsSb for 1.3-1.6µm long wavelength lasers grown by molecular beam epitaxy IEEE J. Select Topics Quant. Electron Harris, J., S., Gambin, V., Ha, W., Wistey, M., Bank, S., Yuen, H. 2002; 4 (8): 795-800
  • Thermo-optic characterization of GaAs for quasi-phase-matched nonlinear-optical applications Harris, J., S., Skauli, T., Kuo, P., S., Levi, O., Vodopyanov, K., L., Pinguet, T. 2002
  • Integrated semiconductor fluorescent detection system for biochip and biomedical applications Thrush, E., Levi, O., Wang, K., Harris Jr., J., S., Smith, S., J. 2002
  • Examination of N incorporation into GaInNAs Lordi, V., Gambin, V., Ha, W., Bank, S., Harris, J. 2002
  • Optomechanical Model of Surface Micromachined Tunable Optoelectonic Devices IEEE J. Select. Topics Quantum Elect. Lin, C., C., Martin, W., A., Harris Jr., J., S. 2002; 1 (8): 80-87
  • Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers Electron. Lett. Harris, J., S., Ha, W., Gambin, V., Wistey, M., Bank, S., Yuen, H. 2002: 277-278
  • Ultrafast sampling using low temperature grown GaAs MSM switches integrated with CMOS amplifier for photonic A/D conversion Urata, R., Nathawad, L., Y., Ma, K., Takabashi, R., Miller, D., A. B., Wooley, B., A. 2002
  • Ti-Island-Catalyzed Si Nanowire Growth by Gas-Source MBE: Morphology and Twinning Tang, Q., Liu, X., Kamins, T., I., Solomon, G., S., Harris Jr., J., S. 2002
  • Differential optical remoting of ultrafast charge packets using self-linearized modulation Chin, H., Keeler, G., A., Helman, N., C., Wistey, M., Miller, D., A. B., Harris Jr., J., S. 2002
  • Continuously tunable Mid-IR Frequency Generation in Orientation Patterned GaAs Harris, J., S., Levi, O., Skauli, T., Pinguet, T., Vodopyanov, K., L., Kuo, P., S. 2002
  • High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide diode lasers Conference on Novel In-Plane Semiconductor Lasers Ha, W., Gambin, V., Wistey, M., Bank, S., Kim, S., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2002: 42–48
  • Integrated semiconductor fluorescent detection system for biochip and biomedical applications Conference on Biomedical Nanotechnology Architectures and Applications Thrush, E., Levi, O., Wang, K., Wistey, M. A., Harris, J. S., Smith, S. J. SPIE-INT SOC OPTICAL ENGINEERING. 2002: 289–297
  • High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide laser diode operating out to 1.4 mu m 28th International Symposium on Compound Semiconductors (ISCS 2001) Ha, W., Gambin, V., Wistey, M., Kim, S., Harris, J. IOP PUBLISHING LTD. 2002: 165–69
  • Long Wavelength GaInNAs(Sb) Lasers on GaAs Ha, W., Harris, J., S. 2002
  • Highly efficient SHG in all-epitaxial quasi-phase-matched GaAs Harris, J., S., Vodopyanov, K., L., Skauli, T., Pinguet, T., J., Schober, A., Levi, O. 2002
  • High Efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Diode Lasers Ha, W., Gambin, V., Bank, S., Wistey, M., Kim, S., Harris Jr., J., S. 2002
  • Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4µm IEEE Photon. Technol. Lett. Ha, W., Gambin, V., Wistey, M., Bank, S., Kim, S., Harris Jr., J., S. 2002; 5 (14): 591-593
  • GaInNAs long wavelength lasers: Progress and Challenges Semicond. Sci. Techn. Harris Jr., J., S. 2002; 8 (17): 880-891
  • Ga(A,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy Appl. Phys. Lett. Krispin, P., Gambin, V., Harris, J., S., Ploog, K., H. 2002; 21 (81): 3987-3989
  • GaInNAs: A new material in the quest for communications lasers Symposia on Materials and Devices for Optoelectronics and Photonics/Photonic Crystals - From Materials to Devices held at the 2002 MRS Spring Meeting Harris, J. S., Gambin, V. MATERIALS RESEARCH SOCIETY. 2002: 117–133
  • GaInNAs, a new material for long wavelength VCSELs 10th Seoul International Symposium on the Physics of Semiconductors and Applications Harris, J. S. KOREAN PHYSICAL SOC. 2001: S306–S312
  • Decoherence in nearly isolated quantum dots PHYSICAL REVIEW LETTERS Folk, J. A., Marcus, C. M., Harris, J. S. 2001; 87 (20)

    Abstract

    Decoherence in nearly isolated GaAs quantum dots is investigated using the change in the average Coulomb blockade peak height when time-reversal symmetry is broken. The normalized change in the average peak height approaches the predicted universal value of 1/4 at temperatures well below the single-particle level spacing, T < Delta, but is greatly suppressed for T > Delta, suggesting that inelastic scattering or other dephasing mechanisms dominate in this regime.

    View details for DOI 10.1103/PhysRevLett.87.206802

    View details for Web of Science ID 000172182900043

    View details for PubMedID 11690504

  • All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion APPLIED PHYSICS LETTERS Eyres, L. A., Tourreau, P. J., Pinguet, T. J., Ebert, C. B., Harris, J. S., Fejer, M. M., Becouarn, L., Gerard, B., Lallier, E. 2001; 79 (7): 904-906
  • Spin degeneracy and conductance fluctuations in open quantum dots PHYSICAL REVIEW LETTERS Folk, J. A., Patel, S. R., Birnbaum, K. M., Marcus, C. M., Duruoz, C. I., Harris, J. S. 2001; 86 (10): 2102-2105

    Abstract

    The dependence of conductance fluctuations on parallel magnetic field is used as a probe of spin degeneracy in open GaAs quantum dots. The variance of fluctuations at high parallel field is reduced from the low-field variance (with broken time-reversal symmetry) by factors ranging from roughly 2 in a 1 microm (2) dot to greater than 4 in 8 microm (2) dots. The factor of 2 is expected for Zeeman splitting of spin-degenerate channels. A possible explanation for the larger suppression based on field-dependent spin-orbit scattering is proposed.

    View details for Web of Science ID 000167259900048

    View details for PubMedID 11289865

  • Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms JOURNAL OF APPLIED PHYSICS Kamins, T. I., Williams, R. S., Basile, D. P., Hesjedal, T., Harris, J. S. 2001; 89 (2): 1008-1016
  • Use of angle resolved X-Ray Photoelectron Spectroscopy for determination of depth and thickness of the different layers in a layer structure J. Vac. Sci. Technol. Spruytte, S., Coldren, C., Harris, J., Pantelidis, D., Lee, H., J., Bravman, J. 2001; 2 (19): 603-608
  • 1.3 micron opto-electronic devices on GaAs using group III-Nitride-Arsenides Conference on Vertical-Cavity Surface-Emitting Lasers V Spruytte, S. G., Wistey, M. A., Larson, M. C., Coldren, C. W., Garrett, H., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2001: 22–33
  • High-speed, dual-function vertical cavity multiple quantum well modulators and photodetectors for optical interconnects Optical Engr. Liu, H., Lin, C., C., Harris, J., S. 2001; 7 (40): 1186-1191
  • GaInNAs long wavelength vertical cavity lasers Technical Digest. CLEO/Pacific Rim Larson, M., C., Coldren, C., C., Spruytte, S., G., Petersen, H., E., Garrett, H., E, Harris, J., S. 2001: 594-5
  • Opto-mechanical model of surface micromachined tunable optoelectronic devices Lin, C., C., Martin, W., A., Harris Jr., J., S. 2001
  • Mid-infrared generation by difference frequency mixing in orientation-patterned GaAs Harris, J., S., Levi, O., Pinguet, T., Skauli, T., Eyres, L., A., Scaccabarozzi, L. 2001
  • Nitrogen incorporation in Group III-Nitride Arsenide materials grown by elemental source MBE J. Crystal Growth Harris, J., S., Spruytte, S., G., Larson, M., C., Wampler, W., Coldren, C., W., Petersen, E., H 2001; 227: 506-515
  • Incorporation of Nitrogen in Nitride-Arsenides: Origin of improved Luminescence Efficiency after Anneal J. Appl. Phys. Harris, J., S., Spruytte, S., Wampler, W., Krispin, P., Coldren, C., Larson, M. 2001; 8 (89): 4401-4406
  • Deep-level defects in MBE grown Ga(A,N) layers Physica B Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2001; 308: 870-873
  • Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy J. Appl. Phys. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2001; 5 (90): 2405-2410
  • High-speed sample and hold using low-temperature-grown GaAs MSM switches for photonic A/D conversion Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris Jr., J., S. 2001
  • Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion IEEE Photon. Technol. Lett. Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris, J., S. 2001; 7 (13): 717-719
  • Second harmonic generation in orientation-patterned AlGaAs waveguides pumped at 1.55 mu m 14th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society Pinguet, T. J., Scaccabarozzi, L., Levi, O., Skauli, T., Eyres, L. A., Fejer, M. M., Harris, J. S. IEEE. 2001: 376–377
  • Widely Tunable Micromachined Optical Filter with Adjustable Tuning Characteristics Lin, C., C., Fu, J., Harris Jr., J., S. 2001
  • Tunable mid-IR generation by difference-frequency mixing in orientation-patterned GaAs Harris, J., S., Levi, O., Skauli, T., Pinguet, T., J., Eyres, L., A., Scaccabarozzi, L. 2001
  • GaInNAs material properties for long wavelength opto-electronic devices Gambin, V., Ha, W., Wistey, M., Kim, S., Harris Jr., J., S. 2001
  • Characterization of 0.5 mm Thick films of orientation-patterned GaAs for nonlinear optical applications Harris, J., S., Pinguet, T., Skauli, T., Levi, O., Vodopyanov, K., Eyres, L., A. 2001
  • Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model J. Appl. Phys. Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris Jr., J., S. 2001; 5 (90): 2358-2369
  • Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy J. Appl. Phys. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2001; 11 (89): 6294-6301
  • Second harmonic generation in thick orientation-patterned GaAs Harris, J., S., Skauli, T., Vodopyanov, K., Pinguet, T., W., Levi, O., Eyres, L., A. 2001
  • Long wavelength GaInNAs ridge waveguide lasers with GaNAs barriers Ha, W., Gambin, V., Wistey, M., Bank, S., Kim, S., Harris Jr., J., S. 2001
  • 1.3 micron opto-electronic devices on GaAs using group III-Nitride-Arsenides Spruytte, S., G., Wistey, M., A., Larson, M., C., Coldren, C., W., Garrett, H., Harris, J., S. 2001
  • Decoherence in nearly isolated quantum dots Phys. Rev. Lett. Folk, J., A., Marcus, C., M., Harris, J., S. 2001; 20 (87): 6802-6804
  • Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model J. Crystal Growth Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris, J., S. 2001; 1-2 (222): 29-37
  • Second harmonic generation in orientation-patterned AlGaAs waveguides pumped at 1.55 microns Harris, J., S., Pinguet, T., Scaccabarozzi, L., Levi, O., Skauli, T., Eyres, L., A. 2001
  • Observation of Wavelength-Converting Optical Switching at 2.5 GHz in a Surface Normal Illuminated Waveguide Sabnis, V., A., Demir, H., V., Yairi, M., Miller, D., A.B., Harris Jr., J., S. 2001
  • High efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Laser diode operating out to 1.4µm Ha, W., Gambin, V., Wistey, M., Kim, S., Harris Jr., J. 2001
  • Use of a dielectric stack as a one-dimensional photonic crystal for wavelength demultiplexing by beam shifting OPTICS LETTERS Nelson, B. E., Gerken, M., Miller, D. A., Piestun, R., Lin, C. C., Harris, J. S. 2000; 25 (20): 1502-1504

    Abstract

    We demonstrate the use of a 30-period dielectric stack structure as a highly dispersive device to spatially separate two beams with a 4-nm wavelength difference by more than their beam width. Unlike previous devices, our structure is simple to fabricate and relatively compact. We discuss possible applications of our device within wavelength-division multiplexing systems.

    View details for PubMedID 18066259

  • Narrow-band light emission in semiconductor-fibre asymmetric waveguide coupler ELECTRONICS LETTERS Mao, E., Yankelevich, D. R., Lin, C. C., Solgaard, O., Knoesen, A., Harris, J. S. 2000; 36 (16): 1378-1379
  • Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process JOURNAL OF APPLIED PHYSICS Okada, Y., Iuchi, Y., Kawabe, M., Harris, J. S. 2000; 88 (2): 1136-1140
  • Wavelength-selective semiconductor in-line fibre photodetectors ELECTRONICS LETTERS Mao, E., Yankelevich, D. R., Lin, C. C., Solgaard, O., Knoesen, A., Harris, J. S. 2000; 36 (6): 515-516
  • In-line fiber evanescent field electrooptic modulators 1999 Novel Optical Materials and Application Workshop Arft, C., Yankelevich, D. R., Knoesen, A., Mao, E., Harris, J. S. WORLD SCIENTIFIC PUBL CO PTE LTD. 2000: 79–94
  • Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements J. Appl. Phys. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2000; 7 (88): 4153-4158
  • Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics IEEE 27th International Symposium on Compound Semiconductors Spruytte, S. G., Larson, M. C., Wampler, W., Coldren, C. W., Harris, J. S. IEEE. 2000: 61–66
  • Incorporation of nitrogen in Group III-Nitrides-Arsenides grown by molecular beam epitaxy (MBE) 11th International Semiconducting and Insulating Materials Conference (SIMC-XI) Spruytte, S. G., Coldren, C. W., Larson, M. C., Harris, J. S. IEEE. 2000: 260–263
  • MBE growth of group III-nitrides-arsenides for long wavelength opto-electronic devices on GaAs substrates 2nd International Symposium on Compound Semiconductor Power Transistors/32nd International Symposium on State-of-the-Art Program on Compound Semiconductors Spruytte, S. G., Coldren, C. W., Marshall, A. F., Larson, M. C., Harris, J. S. ELECTROCHEMICAL SOCIETY INC. 2000: 195–204
  • All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion Eyres, L., A., Tourreau, P., J., Pinguet, T., J., Ebert, C., B., Harris, J., S., Fejer, M., M. 2000
  • Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period Conference on Nonlinear Optics: Materials, Fundamentals, and Applications, Technical Digest Yairi, M. B., Demir, H. V., Coldren, C. W., Harris, J. S., Miller, D. A. OPTICAL SOC AMERICA. 2000: 168–170
  • Narrow-band light emission in a semiconductor-fiber asymmetric waveguide coupler IEEE 27th International Symposium on Compound Semiconductors Mao, E., Lin, C. C., Solgaard, O., Harris, J. S., Yankelevich, D. R., Knoesen, A. IEEE. 2000: 419–423
  • A multiple-quantum-well GaAs/AlGaAs in-line fiber intensity modulator Conference on Integrated Optics Devices IV (IOD-IV) Mao, E. J., Yankelevich, D. R., Coldren, C. W., Solgaard, O., Knoesen, A., Harris, J. S. SPIE-INT SOC OPTICAL ENGINEERING. 2000: 50–57
  • Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern Appl. Phys. Lett. Kung, H., L., Miller, D., A. B., Atanackovic, P., Lin, C., C., Harris Jr., J., S., Carraresi, L. 2000; 22 (76): 3185-3187
  • Thick (200 mu m) orientation-patterned GaAs for bulk quasi-phase-matched nonlinear frequency conversion Tech. Digest CLEO, TOPS, San Francisco, CA Eyres, L., A., Tourreau, P., J., Pinguet, T., J., Ebert, C., B., Harris, J., S., Fejer, M., M. 2000; 39
  • In-line fiber evanescent field electrooptic modulators J. Nonlinear Optical Phys. Materials Arft, G., Yankelevich, D., R., Knoesen, A., Mao, E., Harris Jr., J., S. 2000; 1 (9): 79-94
  • Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process Jpn. J. Appl. Phys. Gotoh, Y., Matsumoto, K., Bubanja, B., Vazquez, F., Maeda, T., Harris, J., S. 2000; 4B (39): 2334-2337
  • Analysis of unstable two-phase region in wurtzite Group III nitride ternary alloy using modified valence force field model Jpn. J. Appl. Phys. Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris, J., S. 2000; 9A (39): 5057-5062
  • 1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions Electron. Lett. Coldren, C., W., Larson, M., C., Spruytte, S., G., Harris Jr., J., S. 2000; 11 (36): 951-952
  • MBE growth of nitride-arsenide materials for long wavelength opto-electronics Symposium on GaN and Related Alloys Held at the MRS Fall Meeting Spruytte, S. G., Coldren, C. W., Marshall, A. F., Larson, M. C., Harris, J. S. MATERIALS RESEARCH SOC. 2000: U407–U412
  • Quasi-phasematched frequency conversion in thick all-epitaxial, orientation-patterned GaAs films Eyres, L., A., Tourreau, P., J., Pinguet, T., J., Ebert, C., B., Harris, J., S., Fejer, M., M. 2000
  • Modeling of MEMS tunable optoelectronic device mirror Lin, C., C., Martin, W., A., Harris Jr., J., S., Chan, E. 2000
  • Wavelength demultiplexing by beam shifting using a dielectric stack as a one-dimensional photonic crystal Nelson, B., E., Gerken, M., Miller, D., A. B., Piestun, R., Lin, C., C., Harris Jr., J., S. 2000
  • Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics Spruytte, S., G., Larson, M., C., Wampler, W., Coldren, C., W., Harris Jr., J., S. 2000
  • Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model J. Appl. Phys. Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris Jr., J., S. 2000; 2 (88): 1104-1110
  • Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers IEEE Photon. Techn.Lett. Larson, M., C., Coldren, C., W., Spruytte, S., G., Petersen, H., E., Harris, J., S. 2000; 12 (12): 1598-1600
  • Vertical Cavity Modulator for Optical Interconnection and its High Speed Performance Liu, H., Lin, C., C., Harris Jr., J., S. 2000
  • Compositional Evolution and Structural Changes during Anneal of Group III-Nitride-arsenide Alloys Spruytte, S., G., Coldren, C., W., Marshall, A., F., Harris, J., S. 2000
  • A multiple-quantum-well GaAs/AlGaAs in-line fiber intensity modulator Mao, E., Yankelevich, D., R., Coldren, C., W., Solgaard, O., Knoesen, A., Harris Jr., J., S. 2000
  • Tunable long wavelength vertical cavity lasers: the engine of next generation optical networks IEEE/LEOS Special Millenium Issue, IEEE J. Sel. Top. Quan. Elect. Harris Jr., J., S. 2000; 6: 1145-1160
  • Room-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat alpha-alumina substrate Appl. Phys. Lett. Matsumoto, K., Gotoh, Y., Maeda, T., Dagata, J., A., Harris Jr., J., S. 2000; 2 (76): 239-241
  • Low threshold current continuous-wave GaInNAs/GaAs VCSELs Larson, M., C., Coldren, C., W., Spruytte, S., G., Petersen, H., E., Harris, J., S. 2000
  • Epitaxial orientation-patterning of AlGaAs films for nonlinear optical devices IEEE 27th International Symposium on Compound Semiconductors Pinguet, T. J., Eyres, L. A., Ebert, C. B., Levi, O., Fejer, M. M., Harris, J. S. IEEE. 2000: 229–232
  • All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion 13th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society Eyres, L. A., Tourreau, P. J., Pinguet, T. J., Ebert, C. B., Harris, J. S., Fejer, M. M., Gerard, B., Becouarn, L., Lallier, E. IEEE. 2000: 312–313
  • Narrow-band light emission in a semiconductor-fiber asymmetric waveguide coupler Mao, E., Lin, C., C., Solgaard, O., Harris, J., S. 2000
  • Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE) Spruytte, S., G., Coldren, C., W., Larson, M., C., Harris, J., S. 2000
  • Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period Yairi, M., B., Demir, H., V., Coldren, C., W., Harris, J., S., Miller, D., A. B. 2000
  • Pulsed 25-108 degrees C operation of GaInNAs multiple quantum well vertical cavity lasers Tech. Digest CLEO , TOPS, San Francisco, CA Coldren, C., W., Larson, M., C., Spruytte, S., G., Garrett, H., E., Harris Jr., J., S. 2000; 39: 229-230
  • Optical gain and collector current characteristics of resonant-cavity phototransistors Appl. Phys. Lett. Lin, C., C., Martin, W., Harris, J., S., Sugihwo, F. 2000; 9 (76): 1188-1190
  • Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy J. Vac. Sci. Technol. B Coldren, C., W., Spruytte, S., G., Harris Jr., J., S., Larson, M., C. 2000; 3 (18): 1480-1483
  • Frequency locking of micromachined tunable VCSELs to external wavelength selective filters Digest LEOS Summer Topical Meeting Optical Sensing in Semiconductor Manufacturing, Aventura, FL Martin, W., A, Lin, C., C., Sugihwo, F., Harris Jr., J., S. 2000
  • Low-temperature saturation of the dephasing time and effects of microwave radiation on open quantum dots PHYSICAL REVIEW LETTERS Huibers, A. G., Folk, J. A., Patel, S. R., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1999; 83 (24): 5090-5093
  • Strain directed assembly of nanoparticle arrays within a semiconductor JOURNAL OF NANOPARTICLE RESEARCH Hung, C., Marshall, A. F., Kim, D., Nix, W. D., Harris, J. S., Kiehl, R. A. 1999; 1 (3): 329-347
  • Size stabilization of arsenic precipitates in nonstoichiometric GaAs-based compounds APPLIED PHYSICS LETTERS Hung, C. Y., Harris, J. S., Marshall, A. F., Kiehl, R. A. 1999; 75 (7): 917-919
  • Coulomb blockade fluctuations in strongly coupled quantum dots PHYSICAL REVIEW LETTERS Maurer, S. M., Patel, S. R., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1999; 83 (7): 1403-1406
  • High-speed, optically controlled surface-normal optical switch based on diffusive conduction APPLIED PHYSICS LETTERS Yairi, M. B., Coldren, C. W., Miller, D. A., Harris, J. S. 1999; 75 (5): 597-599
  • GaAs AlGaAs multiple-quantum-well in-line fiber intensity modulator APPLIED PHYSICS LETTERS Mao, E., Coldren, C. W., Harris, J. S., Yankelevich, D. R., Solgaard, O., Knoesen, A. 1999; 75 (3): 310-312
  • Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition JOURNAL OF CRYSTAL GROWTH HUANG, T. F., Marshall, A., Spruytte, S., Harris, J. S. 1999; 200 (3-4): 362-367
  • An AlGaAs/GaAs tunnel diode integrated with nanometer-scale atomic force microscope tip-induced oxides JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS Okada, Y., Iuchi, Y., Kawabe, M., Harris, J. S. 1999; 38 (2B): L160-L162
  • Group III-nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy Coldren, C., W., Spruytte, S., G., Harris, J., S., Larson, M., C. 1999
  • A GaAs/AlGaAs narrow bandwidth in-line fiber filter 18th Congress of the International Commission for Optics - Optics for the Next Millennium Mao, E., Coldren, C. W., Harris, J. S., Yankelevich, D. R., Solgaard, O., Knoesen, A. SPIE-INT SOC OPTICAL ENGINEERING. 1999: 94–95
  • Realization of logically labeled effective pure states for bulk quantum computation Phys. Rev. Lett. Harris, J., S., Vandersypen, L., M. K., Yannoni, C., S., Sherwood, M., H., Chuang, I., L. 1999; 83: 3085
  • Excess noise in sub-micron silicon FET: characterization, prediction and control Franca-Neto, L., M., Harris, J., S. 1999
  • Scanned potential microscopy of edge and bulk currents in the quantum Hall regime Phys. Rev B Harris, J., S., McCormick, K., L., Woodside, M., T., Huang, M., Wu, M., S., McEuen, P., L. 1999; 7 (59): 4654-4657
  • Vertical cavity modulator for optical interconnection and its high speed performance Liu, H., Lin, C., C., Harris Jr., J., S. 1999
  • Micromachined tunable optoelectronic devices for spectroscopic applications Harris Jr., J., S., Lin, C., C., Martin, W., Sugihwo, F., Larson, M., Paldus, B. 1999
  • GaAs/AlGaAs narrow-bandwidth in-line fiber filter Mao, E., Coldren, C., W., Harris Jr., J., S., Yankelevich, D., R., Solgaard, O., Knoesen, A. 1999
  • Demonstration of second harmonic generation in all-epitaxially grown orientation-patterned AlGaAs waveguides Eyres, L., A., Ebert, C., B., Tourreau, P., J., Harris, J., S., Fejer, M., M. 1999
  • GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique Internl. Symp. Compound Semiconductors Okada, Y., Iuchi, Kawabe, M., Harris Jr., J., S. Institute of Physics Publishing. 1999: 337–340
  • GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique Okada, Y., Iuchi, Y., Kawabe, M., Harris Jr., J., S. 1999
  • Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlattice J. Cryst. Growth Solomon, G., S., Komarov, S., Harris Jr., J., S. 1999; 202: 1190-1193
  • Metal-based room-temperature operating single electron devices using scanning probe oxidation J. J. Appl. Phys. Matsumoto, K., Gotoh, Y., Maeda, T., Dagata, J., A., Harris Jr., J., S. 1999; 1B (38): 477-479
  • MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy J. Crystal Growth Ebert, C., B., Eyres, L., A., Fejer, M., M., Harris Jr., J., S. 1999; 202: 187-193
  • Room temperature single electron transistor by AFM nano-oxidation process-coincidence in experimental and theoretical results Matsumoto, K., Gotoh, Y., Maeda, T., Harris, J., S. 1999
  • Optically-controlled optical gate using a double diode structure Yairi, M., B., Demir, H., V., Coldren, C., W., Miller, D., A. B., Harris Jr., J., S. 1999
  • MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics Spruytte, S., G., Coldren, C., W., Marshall, A., F., Larson, M., C., Harris, J., S. 1999
  • Mesoscopic Coulomb blockade in one-channel quantum dots PHYSICAL REVIEW LETTERS Cronenwett, S. M., Maurer, S. M., Patel, S. R., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1998; 81 (26): 5904-5907
  • Changing the electronic spectrum of a quantum dot by adding electrons PHYSICAL REVIEW LETTERS Patel, S. R., Stewart, D. R., Marcus, C. M., Gokcedag, M., Alhassid, Y., Stone, A. D., Duruoz, C. I., Harris, J. S. 1998; 81 (26): 5900-5903
  • Distributions of the conductance and its parametric derivatives in quantum dots PHYSICAL REVIEW LETTERS Huibers, A. G., Patel, S. R., Marcus, C. M., Brouwer, P. W., Duruoz, C. I., Harris, J. S. 1998; 81 (9): 1917-1920
  • Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers APPLIED PHYSICS LETTERS Hung, C. Y., Harris, J. S., Marshall, A. F., Kiehl, R. A. 1998; 73 (3): 330-332
  • Statistics of peak spacings and widths in the quantum coulomb blockade regime 12th International Conference on Electronic Properties of 2-Dimensional Systems Marcus, C. M., Patel, S. R., Duruoz, C. I., Harris, J. S., Campman, K., Gossard, A. C. ELSEVIER SCIENCE BV. 1998: 201–205
  • Statistics of Coulomb blockade peak spacings PHYSICAL REVIEW LETTERS Patel, S. R., Cronenwett, S. M., Stewart, D. R., Huibers, A. G., Marcus, C. M., Duruoz, C. I., Harris, J. S., Campman, K., Gossard, A. C. 1998; 80 (20): 4522-4525
  • Cavity-locked ring-down spectroscopy JOURNAL OF APPLIED PHYSICS Paldus, B. A., Harb, C. C., Spence, T. G., Wilke, B., Xie, J., Harris, J. S., Zare, R. N. 1998; 83 (8): 3991-3997
  • Iron nitride mask and reactive ion etching of GaN films 39th Electronic Materials Conference (EMC) LEE, H., Harris, J. S. SPRINGER. 1998: 185–89
  • Nanoscale oxidation of GaAs-based semiconductors using atomic force microscope JOURNAL OF APPLIED PHYSICS Okada, Y., Amano, S., Kawabe, M., Shimbo, B. N., Harris, J. S. 1998; 83 (4): 1844-1847
  • Atomic force microscope nanoscale lithography for single-electron device applications 24th IEEE International Symposium on Compound Semiconductors Okada, Y., Amano, S., Kawabe, M., Shimbo, B. N., Harris, J. S. IOP PUBLISHING LTD. 1998: 577–580
  • Increased surface ordering of InAs island arrays using a multi-dot column subsurface structure 24th IEEE International Symposium on Compound Semiconductors Komarov, S. A., Solomon, G. S., Harris, J. S. IEEE. 1998: 535–538
  • Micromachined tunable vertical cavity lasers as wavelength selective tunable photodetectors 24th IEEE International Symposium on Compound Semiconductors Sugihwo, F., Lin, C. C., Bouteiller, J. C., Larson, M., Harris, J. S. IEEE. 1998: 561–564
  • Two-dimensional device simulation for PHEMT material and process control 24th IEEE International Symposium on Compound Semiconductors Pao, Y. C., Harris, J. S. IEEE. 1998: 647–650
  • Calculation of unstable mixing region in wurtzite InGaN Symposium on Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature Takayama, T., Ueda, T., Ishida, M., Yuri, M., Itoh, K., Baba, T., Harris, J. S. MATERIALS RESEARCH SOCIETY. 1998: 291–296
  • Arsenic precipitation in GaAs for single-electron tunneling applications 24th IEEE International Symposium on Compound Semiconductors Hung, C. Y., Harris, J. S., Marshall, A. F., Kiehl, R. A. IEEE. 1998: 135–138
  • Time dependence of arsenic precipitates' size distribution in low temperature GaAs Materials-Research-Society Symposium on Diffusion Mechanisms in Crystalline Materials at the MRS Spring Meeting Hung, C. Y., Harris, J. S., Marshall, A. F., Kiehl, R. A. MATERIALS RESEARCH SOCIETY. 1998: 407–412
  • Growth and effects of single-crystalline ZnO buffer layer on GaN epitaxy 24th IEEE International Symposium on Compound Semiconductors HUANG, T. F., Ueda, T., Spruytte, S., Harris, J. S. IEEE. 1998: 11–14
  • Arsenic precipitation in GaAs for single-electron tunneling applications 24th IEEE International Symposium on Compound Semiconductors Hung, C. Y., Harris, J. S., Marshall, A. F., Kiehl, R. A. IOP PUBLISHING LTD. 1998: 135–138
  • High-speed quantum well optoelectronic gate based on diffusive conduction recovery Optics in Computing 98 Meeting Yairi, M. B., Coldren, C. W., Miller, D. A., Harris, J. S. SPIE - INT SOC OPTICAL ENGINEERING. 1998: 10–13
  • Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs 24th IEEE International Symposium on Compound Semiconductors Massengale, A. R., Tai, C. Y., Deal, M. D., Plummer, J. D., Harris, J. S. I E E E. 1998: 329–332
  • Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs 24th IEEE International Symposium on Compound Semiconductors Massengale, A. R., Tai, C. Y., Deal, M. D., Plummer, J. D., Harris, J. S. IOP PUBLISHING LTD. 1998: 329–332
  • Near-Infrared Cavity Ringdown Spectroscopy of Water Vapor in an Atmospheric Flame Chem. Phys. Lett. Harris, J., S., Xie, J., Paldus, B., A., Wahl, E., H., Owano, T., G., Kruger, C., H. 1998; 5-6 (284): 387-395
  • AlGaAs/GaAs Tunneling Diode Integrated with nanometre-scale Oxides Patterned by Atomic Force Microscope Electron. Lett. Okada, Y., Amano, S., Iuchi, Y., Kawabe, M., Harris Jr., J., S. 1998; 34: 12, 1262-1263
  • Advances in CW cavity ring-down spectroscopy Technical Digest International Quantum Electronics Conference Paldus, A., Spence, T., G., Harb, C., C., Willke, B., Levenson, M., D., Harris Jr., J., S. 1998: 79
  • MBE growth of laterally antiphase-patterned GaAs films using thin Ge layers for waveguide mixing Eyres, A., Ebert, C., B., Fejer, M., M., Harris Jr., J., S. 1998
  • In-line fiber-optic filter using GaAs ARROW waveguide Mao, E., Coldren, C., Harris Jr., J., S., Yankelevich, D., Solgaard, O., Knoesen, A. 1998
  • Vapor Phase Epitaxy Growth of GaN on Pulsed Laser Deposited ZnO Buffer Layer J. Crys. Growth Harris, J., S., Ueda, T., Huang, T., F., Spruytte, S., Lee, H., Yuri, M. 1998; 3-4 (187): 340-346
  • Scanned potential microscopy of a two-dimensional electron gas Physica B McCormick, K., L., Woodside, M., T., Huang, M., McEuen, P., L., Duruöz, C., I., Harris Jr., J., S. 1998; 251: 79-83
  • Room Temperature Coulomb Oscillation and Memory Effect for Single Electron Memory made by Pulse-Mode AFM Nano-oxidation Process IEDM, San Francisco. Matsumoto, K., Gotoh, Y., Maeda, T., Dagata, J., A., Harris, J., S. 1998
  • Micromachined Tunable Vertical-Cavity Lasers as Wavelength-Selective Tunable Photodetectors Sugihwo, F., Lin, C., C., Bouteiller, J., C., Larson, M., Harris Jr., J., S. 1998
  • Calculation of Unstable Mixing Region in Wurtzite InGaN Harris, J., S., Takayama, T., Ueda, T., Ishida, M., Yuri, M., Itoh, K. 1998
  • Simultaneous Optimization of Membrane Reflectance and Tuning Voltage for Tunable Vertical Cavity Lasers Appl. Phys. Lett. Sugihwo, F., Larson, M., Harris Jr., J., S. 1998; 1 (72): 10-12
  • Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy Chem Phys. Lett. Levenson, M., D., Paldus, B., A., Spence, T., G., Harb, C., C., Harris Jr., J., S., Zare, R., N. 1998; 290 (4-6): 335-340
  • Growth of epitaxial AlxGa1-xN films by pulsed laser deposition App. Phys. Lett. Huang, T., F., Harris Jr., J., S. 1998; 10 (72): 1158-1160
  • Increased surface ordering of InAs island arrays using a multidot column subsurface structure Komarov, S., A., Solomon, G., S., Harris Jr., J., S. 1998
  • High-speed quantum well optoelectronic gate based on diffusive conduction recovery Harris, J., S., Yairi, B., Coldren, C., W., Miller, D., A. B. 1998
  • Vertical InAs diffusion and surface ordering processes in InAs vertical quantum dot columns Physica E Solomon, G., S., Wu, W., Tucker, J., R., Harris Jr., J., S. 1998; 1-4 (2): 709-713
  • Two-dimensional Device Simulation for PHEMT Material and Process Control Pao, Y., C., Harris Jr., J., S. 1998
  • Iron Nitride Mask and Reactive Ion Etcjomg pf GaN Films J. Elec. Matls Lee, H., Harris Jr., J., S. 1998; #4 (27): 185-189
  • Basic Mechanisms of an Atomic Force Microscope Tip-induced Nano-oxidation Process of GaAs J. Appl. Phys. Okada, Y., Amano, S., Kawabe, M., Harris Jr., J., S. 1998; 83: 12, 7998-8001
  • Micromachined tunable vertical cavity lasers as wavelength selective tunable photodetectors Sugihwo, F., Lin, C., C., Bouteiller, J., C., Larson, M., Harris Jr., J., S. 1998
  • Low Noise Silicon RF FET Design Using Graded Doping and Stress Franca-Neto, L., M., Harris Jr., J., S. 1998
  • Statistics of peak spacings and widths in the quantum coulomb blockade regime Physica B Marcus, C., M., Patel, S., R., Duruöz, C., I., Harris Jr., J., S., Campman, K., Gossard, A., C. 1998; 251: 201-205
  • Micromachined Widely Tunable Vertical Cavity Laser Diodes J. of Microelectromechanical Systems Sugihwo, F., Larson, M., Harris Jr., J., S. 1998; 1 (7): 48-55
  • Bulk Spin Quantum Computation toward Large-scale Quantum Computation Dig. Tech. Papers, IEEE ISSCC Chuang, I., L., Vandersypen, L., M. K., Harris, J., S. 1998: 96-97
  • Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor Technical Digest, IEEE IEDM, San Francisco, CA Sugihwo, F., Lin, C., C., Eyres, L., A., Fejer, M., M., Harris Jr., J., S. 1998: 665
  • Laser diode cavity ring-down spectroscopy using acousto-optic modulator stabilization JOURNAL OF APPLIED PHYSICS Paldus, B. A., Harris, J. S., Martin, J., Xie, J., Zare, R. N. 1997; 82 (7): 3199-3204
  • Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs ELECTRONICS LETTERS Massengale, A. R., Ueda, T., Harris, J. S., Tai, C. Y., Deal, M. D., Plummer, J. D., Fernandez, R. 1997; 33 (12): 1087-1089
  • Growth of abrupt GaAs/Ge heterointerfaces by atomic hydrogen-assisted molecular beam epitaxy 9th International Conference on Molecular Beam Epitaxy (MBE-IX) Okada, Y., Harris, J. S., SUTOH, A., Kawabe, M. ELSEVIER SCIENCE BV. 1997: 1039–1044
  • Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs ELECTRONICS LETTERS Sung, B., Chui, H. C., Fejer, M. M., Harris, J. S. 1997; 33 (9): 818-820
  • Zero chirp asymmetric fabry-perot electroabsorption modulator using coupled quantum wells IEEE PHOTONICS TECHNOLOGY LETTERS Trezza, J. A., Powell, J. S., Harris, J. S. 1997; 9 (3): 330-332
  • Correlations between ground and excited state spectra of a quantum Dot Science (New York, N.Y.) Stewart, D. R., Sprinzak, D., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1997; 278 (5344): 1784–88

    Abstract

    The ground and excited state spectra of a semiconductor quantum dot with successive electron occupancy were studied with linear and nonlinear magnetoconductance measurements. A direct correlation was observed between the mth excited state of the N-electron system and the ground state of the (N + m)-electron system for m up to 4. The results are consistent with a single-particle picture in which a fixed spectrum of energy levels is successively filled, except for a notable absence of spin degeneracy. Further departures from the single-particle picture due to electron-electron interaction were also observed. Magnetoconductance fluctuations of ground states show anticrossings where wave function characteristics are exchanged between adjacent levels.

    View details for PubMedID 9388178

  • Monolithically micromachined wavelength: Tunable vertical cavity lasers 27th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII), at the 192nd Meeting of the Electrochemical-Society Sugihwo, F., Larson, M. C., Harris, J. S. ELECTROCHEMICAL SOCIETY INC. 1997: 118–24
  • 25nm Wavelength range tunable vertical cavity lasers 55th Annual Device Research Conference Sugihwo, F., Larson, M. C., Lin, C. C., MARTIN, W., Harris, J. S. IEEE. 1997: 108–109
  • Whispering Gallery Mode Operation in Tunable Vertical Cavity Laser Structure Electron. Lett. Sugihwo, F., Larson, M., Harris Jr., J., S. 1997; 4 (33): 1467-8
  • Increased size uniformity through vertical quantum dot columns J. Crystal Growth Solomon, G., S., Komarov, S., Harris Jr., J., S., Yamamoto, Y. 1997; pt.2 (175): 707-712
  • Fabrication of Single Electron Memory on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process International Electron Devices Meeting, Washington, DC Matsumoto, K., Gotoh, Y., Shirakashi, J. I., Maeda, T., Harris Jr., J., S. 1997: 155-157
  • Atom-resolved Scanning Tunneling Microscopy of Vertically Ordered InAs Quantum Dots Appl. Phys. Lett. Wu, W., Solomon, G., S., Harris Jr., J., S., Tucker, J., R. 1997; 71: 1083-1085
  • Low Noise FET Design for Wireless Communications Franca-Neto, M., Mao, E., Harris Jr., J., S. 1997
  • Experiments on the Statistics of Coulomb Blockade Peak Spacing: Beyond Random Matrix Theory Marcus, C., M., Patel, S., R., Cronenwett, S., M., Stewart, D., R., Huibers, A., G., Harris Jr., J., S. 1997
  • Arsenic Precipitation in GaAs for Single-Electron Tunneling Applications Hung, C., Y., Harris Jr., J., S. 1997
  • Laser parameter extraction for tunable vertical cavity lasers Elect. Lett. Lin, C., C., Sugihwo, F., Harris Jr., J., S. 1997; 20 (33): 1705-1707
  • Intersubband Absorption Saturation Study of Narrow III-V Multiple Quantum Wells in the l = 2.8-9 µm Spectral Range Semicond. Sci. Technol. Vodopyanov, K., L., Chazapis, V., Phillips, C., C., Sung, B., Harris Jr., J., S. 1997; 12: 708-714
  • Growth of Thick GaN Films on RF Sputtered AIN Buffer Layer by Hydride Vapor Phase Epitaxy J. Electronic Materials Lee, H., Yuri, M., Ueda, T., Harris Jr., J., S., Sin, K. 1997; 8 (26): 898-902
  • Increased Ordering in Vertically Coupled InAs Quantum Dot Arrays Solomon, G., S., Harris Jr., J., S. 1997
  • Electromechanical Tuning of Lasing Wavelength of Vertical Cavity Lasers Sugihwo, F., Lin, C., C., Larson, M., Harris Jr., J., S. 1997
  • Cavity ring-down spectroscopy with Fourier-transform-limited light pulses Chem. Phys. Lett. Martin, J., Paldus, B., A., Zalicki, P., Wahl, E., H., Owano, T., G., Harris, J., S. 1997; 1-2 (258): 63-70
  • Localized Intermixing of AlAs and GaAs Layers for Lithographic Control of the Lateral Oxidation of AlAs Massengale, A., R., Tai, C., Y., Deal, M., D., Plummer, J., D., Harris Jr., J., S. 1997
  • Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy Chem. Phys Lett. Levenson, M., D., Paldus, B., A., Spence, T., G., Harb, C., C., Harris Jr., J., S., Zare, R., N. 1997
  • Single Electron Transistor on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process Matsumoto, K., Gotoh, Y., Shirakashi, J. I., Maeda, T., Harris Jr., J., S. 1997
  • Growth and Defects of Single Crystalline ZnO Buffer Layer on GaN Huang, T., F., Ueda, T., Spruytte, S., Harris Jr., J., S. 1997
  • 30nm Wavelength Tunable Vertical Cavity Lasers Sugihwo, F., Larson, M., C., Harris Jr., J., S. 1997
  • Scanned Potential Microscopy of a Two-dimensional electron gas Harris, J., S., McCormick, L., Woodside, M., Huang, M., McEuen, P., L., Duruöz, C., I. 1997
  • Increased Surface Ordering of InAs Island Arrays Using a Multi-Dot Column Subsurface Structure Komarov, S., A., Solomon, G., S., Harris Jr., J., S. 1997
  • Correlations between Ground and Excited State Spectra of a Quantum Dot Stewart, R., Sprinzak, D., Marcus, C., M., Duruöz, C., I 1997
  • Low Threshold Continuously Tunable Vertical Cavity Surface Emitting Lasers with 19.1 nm Wavelength Range Appl. Phys. Lett. Sugihwo, F., Larson, M., Harris Jr., J., S. 1997; 70: 547-549
  • Analysis of Device Parameters for Pnp-Type AlGaAs/GaAs HBTs Including High-Injection Using New Direct Parameter Extraction IEEE Trans. Electron Devices Kameyama, A., R., Massengale, C., H., Dai, C., H., Harris Jr., J., S. 1997; 1 (44): 1-10
  • Switching and hysteresis in quantum dot arrays Engineering Foundation Conference on Ordered Molecular and Nanoscale Electronics Duruoz, C. I., Clarke, R. M., Marcus, C. M., Harris, J. S. IOP PUBLISHING LTD. 1996: 372–75
  • Structural and photoluminescence properties of growth-induced InAs island columns in GaAs 15th North American Conference on Molecular Beam Epitaxy Solomon, G. S., Trezza, J. A., Marshall, A. F., Harris, J. S. A V S AMER INST PHYSICS. 1996: 2208–11
  • Broad-Range Continuous Wavelength Tuning in Microelectromechanical Vertical-Cavity Surface-Emitting Lasers Digest IEEE/LEOS 1996 Summer Topical Meetings Harris Jr., J., S., Larson, M., C., Massengale, A., R. 1996
  • Optical properties and morphology of GaN grown by MBE on sapphire substrates Symposium on III-Nitride, SiC and Diamond Materials for Electronic Devices Tuncel, E., OBERMAN, D. B., LEE, H., Ueda, T., Harris, J. S. MATERIALS RESEARCH SOC. 1996: 681–686
  • Growth of GaAs and InAlAs on high quality, epitaxial, NiAl, metal film Symposium on Evolution of Epitaxial Structure and Morphology Hung, C. Y., Weckwerth, M. V., Visokay, M. R., Pao, Y. C., Harris, J. S. MATERIALS RESEARCH SOCIETY. 1996: 537–542
  • Growth of epitaxial GaN films using ZnO buffer layer by pulsed laser deposition Symposium on Compound Semiconductor Electronics and Photonics HUANG, T. F., Tuncel, E., Yeo, J. S., Harris, J. S. MATERIALS RESEARCH SOC. 1996: 389–394
  • Microelectromechanical wavelength-tunable vertical cavity laser 54th Annual Device Research Conference Larson, M. C., Massengale, A. R., Harris, J. S. IEEE. 1996: 90–91
  • Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl3/N-2 and NH3/N-2 Symposium on III-Nitride, SiC and Diamond Materials for Electronic Devices LEE, H., Yuri, M., Ueda, T., Harris, J. S. MATERIALS RESEARCH SOC. 1996: 233–238
  • Micromachined tunable vertical-cavity surface-emitting lasers 1996 International Electron Devices Meeting Larson, M. C., Sugihwo, F., Massengale, A. R., Harris, J. S. IEEE. 1996: 405–408
  • Atomic force microscope chemically induced direct processing Symposium on Compound Semiconductor Electronics and Photonics Shimbo, B. N., Komarov, S., Vartanian, B. J., Okada, Y., Harris, J. S. MATERIALS RESEARCH SOC. 1996: 299–301
  • GaAs-on-Ge heteroepitaxy by atomic hydrogen-assisted molecular beam epitaxy (H-MBE) Symposium on Evolution of Epitaxial Structure and Morphology Okada, Y., Harris, J. S., SUTOH, A., Kawabe, M. MATERIALS RESEARCH SOCIETY. 1996: 203–206
  • Broad-range continuous wavelength tuning in microelectromechanical vertical-cavity surface-emitting lasers IEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing Harris, J. S., Larson, M. C., Massengale, A. R. IEEE. 1996: C31–C32
  • Collector-up AlGaAs/GaAs HBTs using oxidized AlAs 54th Annual Device Research Conference Massengale, A. R., Larson, M. C., Dai, C., Harris, J. S. IEEE. 1996: 36–37
  • Photoluminescence study of chloride VPE-grown GaN Symposium on Compound Semiconductor Electronics and Photonics Ueda, T., Yuri, M., LEE, H., Harris, J. S., Baba, T. MATERIALS RESEARCH SOC. 1996: 189–194
  • Vertical cavity X-modulators for reconfigurable optical interconnection and routing 3rd International Conference on Massively Parallel Processing Using Optical Interconnections (MPPOI 96) Powell, J. S., Trezza, J. A., Morf, M., Harris, J. S. IEEE COMPUTER SOC. 1996: 352–359
  • Micromachined tunable Fabry-Perot filters for wavelength division multiplexing Conference on Wavelength Division Multiplexing Components Larson, M. C., Harris, J. S. SPIE - INT SOC OPTICAL ENGINEERING. 1996: 172–183
  • Homoepitaxial and heteroepitaxial growth of Sr0.61Ba0.39Nb2O6 thin films by pulsed laser deposition Symposium on Epitaxial Oxide Thin Films II, at the 1995 MRS Fall Meeting Yeo, J. S., YOUDEN, K. E., HUANG, T. F., Hesselink, L., Harris, J. S. MATERIALS RESEARCH SOC. 1996: 225–230
  • Intersubband transitions to the above-barrier states controlled by electron Bragg mirrors 22nd International Symposium on Compound Semiconductors - Technologies for Future Electronics and Optoelectronics Industries (ISCS-22) Sung, B., Chui, H. C., MARTINET, E. L., Harris, J. S. IOP PUBLISHING LTD. 1996: 1187–1192
  • Vapor phase epitaxy of GaN using gallium tri-chloride and ammonia Symposium on Compound Semiconductor Electronics and Photonics Yuri, M., Ueda, T., LEE, H., Itoh, K., Baba, T., Harris, J. S. MATERIALS RESEARCH SOC. 1996: 195–200
  • Intrinsic Bistability in Nonlinear Transport Through a Submicron Lateral Barrier Surface Science Pilling, G., Cobden, D., H., McEuen, P., L., Duruöz, C., I., Harris Jr., J., S. 1996; 1-3 (362): 652-655
  • Electroluminescence in vertically aligned quantum dot multilayer light-emitting diodes fabricating by growth-induced islanding Appl. Phys. Lett. Solomon, G., S., Larson, M., C., Harris Jr., J., S. 1996; 13 (69): 1897-1899
  • Vertical-cavity X-modulators for WDM Powell, J., S., Trezza, J., A., Morf, M., Harris Jr., J., S. 1996
  • Photoluminescence Study of Chloride VPE-Grown GaN Ueda, T., Yuri, M., Lee, H., Harris Jr., J., S. 1996
  • Growth of Epitaxial GaN Films Using ZnO Buffer Layer by Pulsed Laser Deposition Huang, T., F., Tuncel, E., Yeo, J., S., Harris Jr., J., S. 1996
  • Chloride VPE Growth of GaN on Pulsed Laser Deposited ZnO buffer Layer Harris, J., S., Ueda, T., Yuri, M., Huang, T., F, Spruytte, S., Lee, H. 1996
  • Thermodynamic Analysis and Growth Characterization of thick GaN films grown by Chloride VPE using GaCl3/N2 and NH3/N2 Lee, H., Yuri, M., Ueda, T., Harris Jr., J., S. 1996
  • Design of Quantum Well Intersubband Transitions for Non-linear Difference Frequency Mixing Technical Digest IEEE/LEOS: Nonlinear Optical Meeting Harris Jr., J., S. 1996
  • Deep Level Defects in GaAs on Si Substrates Grown by Atomic Hydrogen Assisted Molecular Beam Epitaxy J. Appl. Phys. Okada, Y., Harris Jr., J., S. 1996; 8 (80): 4770-4772
  • Control of Quasi-Bound States by Electron Bragg Mirrors in GaAs/Al0.3Ga0.7As Quantum Wells Appl. Phys. Lett. Sung, B., Chui, H., C., Martinet, E., L., Harris Jr., J., S. 1996; 19 (68): 2720 - 2722
  • The Mechanical Properties of NiAl Grown on GaAs by Molecular Beam Epitaxy Weckwerth, M., V., Harris Jr., J., S. 1996
  • Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature made by STM/AFM Nano-Oxidation Process Matsumoto, K., Ishii, M., Shirakashi, J. I., Vartanian, B., J., Harris Jr., J., S. 1996
  • Micromachined tunable Fabry-Perot filters for wavelength division multiplexing Larson, M., C., Harris Jr., J., S. 1996
  • Growth of GaAs and InAlAs on High Quality, Epitaxial, NiAl Metal Film Hung, Y., Weckwerth, M., V., Visokay, M., R., Pao, Y., C., Harris Jr., S., J. 1996
  • Application of Micro-Electro-Mechanical Systems to Optoelectronics Harris Jr., J., S. 1996
  • Control of Quasi-Bound States by Electron Bragg Mirrors and electron Lifetime Measurements in GaAs/AlGaAs Quantum Wells Sung, B., Woods, G., L., Rella, C., W., Schwettman, H., A., Fejer, M., M., Harris, J., S. 1996
  • Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs Phys. Rev. Lett. Solomon, G., S., Trezza, J., A., Marshall, A., F., Harris Jr., J., S. 1996; 6 (76): 952 - 955
  • Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process for TiOx/Ti System Appl. Phys. Lett. Matsumoto, K., Ishii, M., Segawa, K., Oka, Y., Vartanian, B., J., Harris Jr., J., S. 1996; 1 (68): 34-36
  • Creation and Optimization of Vertical Cavity X-Modulators IEEE J. Quant. Elect. Trezza, J., A., Morf, M., Harris Jr., J., S. 1996; 1 (32): 53-60
  • Basic Analysis of Atomic-scale Growth Mechanisms for Molecular Beam Epitaxy of GaAs using atomic Hydrogen as a surfactant J. Vac.Sci. Technol. B Okada, Y., Harris Jr., J., S. 1996; 3 (14): 1725 - 1728
  • Vertical Cavity X-Modulators for Reconfigurable Optical Interconnection and Routing Powell, J., S., Trezza, J., A., Morf, M. 1996
  • Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia Yuri, M., Ueda, T., Lee, H., Itoh, K., Baba, T., Harris Jr., J., S. 1996
  • Vertical cavity X-modulators for WDM Conference on Wavelength Division Multiplexing Components Powell, J. S., Trezza, J. A., Morf, M., Harris, J. S. SPIE - INT SOC OPTICAL ENGINEERING. 1996: 207–216
  • Size Dependence of Room Tempeature Operated Side Gate Single Electron Transistor with Multi-Islands Structure made by STM/AFM Nano-Oxidation Process Matsumoto, K., Ishii, M., Shirakashi, J., I., Vartanian, B., J., Harris Jr., S., J. 1996
  • GaN Film Growth by a Supersonic Arcjet Plasma Cappelli, M., A., Kull, A., E., Schwendner, K., Lee, H., Harris Jr., S., J. 1996
  • Broad-Range Continuous Wavelength Tuning in Microelectronmechanical Vertical Cavity Surface Emitting Lasers Harris Jr., J., S. 1996
  • Atomic Force Microscope Chemically Induced Direct Processing Shimbo, B., N., Komarov, S., Vartanian, B., J., Okada, Y., Harris Jr., S., J. 1996
  • Two-State Electrically Controllable Phase Diffraction Grating Using Arrays of Vertical-Cavity Phase Flip Modulators IEEE Photon. Techno. Lett. Trezza, J., A., Harris Jr., J., S. 1996; 9 (8): 1211-1213
  • Strain Relaxation in Compositionally Graded Epitaxial Layers J. Vac. Sci. Techno. B Kim, S., D., Lord, S., M., Harris Jr., J., S. 1996; 2 (14): 642-646
  • Optical Properties and Morphology of GaN Grown by MBE on Sapphire Substrates Tuncel, E., Oberman, D., B., Lee, H., Ueda, T., Harris Jr., S., J. 1996
  • Raman Scattering Study of GaN Films J. Appl. Phys. Kirollov, D., Lee, H., Harris Jr., J., S. 1996; 7 (80): 4058-4062
  • Observation of Super-Structure in High-Quality Pseudomorpic Film of NiAl grown on GaAs J. of Crystal Growth Hung, C., Y., Weckwerth, M., V., Marshall, A., F., Pao, Y., C., Harris Jr., J., S. 1996; 2 (169): 201-208
  • Continuously-tunable micromachined vertical-cavity surface-emitting laser with 18 nm range Electr. Lett. Larson, M., C., Massengale, A., R., Harris Jr., J., S. 1996; 4 (32): 330-332
  • Single electron devices with various structures made by STM/AFM nano-oxidation process Matsumoto, K., Ishii, M., Shirakashi, J., Vartanian, B., Harris Jr., S., J. 1996
  • Switching and Hysteresis in Quantum Dot Arrays J. of Nanotechnology Duruöz, I., Clarke, R., M., Marcus, C., M., Harris Jr., J., S. 1996; 4 (7): 372 - 375
  • Fabrication of Novel Quantum Devices - Toward Room Temperature Operation of Single Electron Devices Harris Jr., J., S. 1996
  • Wide and Continuous Wavelength Tuning in a Vertical Cavity Surface Emitting Laser Using a Micromachined Deformable Membrane Mirror Appl. Phys. Lett. Larson, M., C., Harris Jr., J., S. 1996; 7 (68): 891-893
  • Vapor Phase Epitaxy of GaN using GaCl3/N2 and NH3/N2 J. Crystal Growth Lee, H., Harris Jr., J., S. 1996: 689– 696
  • Saturation Study of III-V Multi Quantum Well Bound-to-Bound and Bound-to-Quasibound Intersubband Transitions in the 3 - 10 µm Spectral Range Semicond. Sci. Techno. Vodopyanov, K., L., Chazapis, V., Phillips, C., C., Sung, B., Harris Jr., J., S. 1996
  • Reactive Ion Etching of Gallium Nitride Films J. Electric Materials Lee, H., Oberman, D., B., Harris Jr., J., S. 1996; 5 (25): 835-837
  • Micromachined Tunable Vertical-Cavity Surface-Emitting Lasers Technical Digest 1996 IEEE IEDM Larson, M., C., Sugihwo, F., Massengale, A., R., Harris Jr., J., S. 1996
  • Collector-up AlGaAs/GaAs heterojunction bipolar transistors using oxidized AlAs for current confinement Electr. Lett. Massengale, C., H., Larson, M., C., Dai, C., Harris Jr., J., S. 1996; 4 (32): 399-401
  • EPITAXIAL-GROWTH OF THICK PSEUDOMORPHIC NIAL METAL-FILMS ON GAAS BY MIGRATION-ENHANCED EPITAXY 8th International Conference on Molecular Beam Epitaxy Weckwerth, M. V., Hung, C. Y., Pao, Y. C., Harris, J. S. ELSEVIER SCIENCE BV. 1995: 1150–53
  • Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs Appl. Phys. Lett. Solomon, G., S., Trezza, J., A., Harris Jr., J., S. 1995; 23 (66): 3161-3163
  • Coupled quantum wells for optical modulation NATO Advanced Study Institute on Confined Electrons and Photons - New Physics and Applications Trezza, J. A., Harris, J. S. PLENUM PRESS DIV PLENUM PUBLISHING CORP. 1995: 759–764
  • Epitaxial multilayers of (Sr,Ba)Nb2O6 and conducting films on (001) MgO substrates Symposium on Film Synthesis and Growth Using Energetic Beams HUANG, T. F., YOUDEN, K. E., THONY, S. S., Hesselink, L., Harris, J. S. MATERIALS RESEARCH SOCIETY. 1995: 79–84
  • Pulsed laser deposition of epitaxial Sr0.61Ba0.39Nb2O6 thin films for waveguide applications Symposium on Ferroelectric Thin Films IV, at the 1994 MRS Fall Meeting YOUDEN, K. E., THONY, S. S., Hesselink, L., Harris, J. S. MATERIALS RESEARCH SOC. 1995: 173–178
  • CHARACTERIZATION OF IN-SITU VARIABLE-ENERGY FOCUSED ION BEAM/MBE MQW STRUCTURES 21st International Symposium on Compound Semiconductors Bone, D. J., LEE, H., Williams, K., Harris, J. S., Pease, R. F. IOP PUBLISHING LTD. 1995: 359–62
  • Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process Matsumoto, K., Ishii, M., Segawa, K., Oka, Y., Vartanian, B., J., Harris Jr., J., S. 1995
  • MBE Growth of High-Quality GaAs and AlGaAs Molecular Beam Epitaxy: Applications to Key Materials Larkins, C., Harris Jr., J., S. edited by Farrow, R., F. C. Noyes, Park Ridge. 1995: 114–274
  • Growth Induced and Patterned 0-Dimensional Quantum Structures in Low Dimensional Structures Prepared by Epitaxial Growth of Regrowth on Patterned Substrate Solomon, G., S., Duruöz, C., I., Trezza, J., A., Clarke, R., M., Marcus, C., M., Harris, J., S. edited by Eberl et al, K. 1995: 313–324
  • Continuously Tunable Micro-Electromechanical Vertical-cavity Surface-emitting Lasers Internl J. Optoelectronics Larson, M., C., Massengale, A., R., Harris Jr., J., S. 1995; 5 (10): 401 – 408
  • Broadly -Tunable Resonant-Cavity Light-emitting Diode IEEE Photonics Technology Lett. Larson, M., C., Harris Jr., J., S. 1995; 11 (7): 1267 - 1269
  • Periodic Mode Shift in Vertical Cavities Grown by Molecular Beam Epitaxy Eng, L., E., Toh, K., Chang-Hasnain, C., J., Bacher, K., Harris Jr., J., S. 1995
  • Comparison of Experimental and Theoretical Results of Room Temperature Operated Single Electron Transistor made by STM/AFM Nano - Oxidation Process Matsumoto, K., Ishii, M., Segawa, K., Oka, Y., Vartanian, B., J., Harris Jr., J., S. 1995
  • Tunable Mid-Infrared Generation by Difference Frequency Mixing of Diode Laser Wavelengths in Intersubband InGaAs / AlAs Quantum Wells Chui, H., C., Woods, G., L., Fejer, M., M., Martinet, E., L., Harris Jr., J., S. 1995
  • Threshold, Switching, and Hysteresis in Quantum Dot Arrays Phys. Rev. Lett. Duröz, C., I, Clarke, R., M., Marcus, C., M., Harris Jr., J., S. 1995; 16 (74): 3237-3240
  • Observation of 1.5µm Quantum Confined Stark Effect in InGaAs/AlGaAs Multiple Quantum Wells on GaAs Substrates J. of Vac. Sci. Tech. Kim, S., D., Trezza, J., A., Harris Jr., J., S. 1995; 4 (B 13): 1526 - 1528
  • Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxy J. Crystal Growth Weckwerth, M., V., Hung, C., Y., Pao, Y., C., Harris Jr., J., S. 1995; 150: 1150 – 1153
  • A Wet Etching Technique for Accurate Etching of GaAs/AlAs Distributed Bragg Reflectors J. Electrochem. Soc. Bacher, K., Harris Jr., J., S. 1995; 7 (142): 2386 – 2388
  • Wavelength Shift in Vertical Cavity Laser Arrays on a Patterned Substrate Eng, L., E., Bacher, K., Yuen, W., Larson, M., Ding, G., Harris Jr., J., S. 1995
  • Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs Solomon, G., S., Trezza, J., A., Harris Jr., J., S. 1995
  • MBE growth of gan with ECR plasma and hydrogen azide Oberman, D., B., Lee, H., Gotz, W., K., Harris Jr., J., S. 1995
  • Heteroepitaxial growth of GaN on GaAs by ECR plasma-assisted MBE Lee, H., Oberman, D., B., Gotz, W., Harris Jr., J., S. 1995
  • Effect of substrate miscut on the structural-properties of ingaas linear graded buffer layers grown by molecular-beam epitaxy on GaAs Eldredge, J., W., Matney, K., M., Goorsky, M., S., Chui, H., C., Harris Jr., J., S. 1995
  • Coupled Quantum Wells for Optical Modulation Confined Electron and Photon Systems Trezza, J., A., Harris Jr., J., S. edited by Burnstenin, E., Weisbuck, C. Plenum Press. 1995: 759–764
  • Vertical Coupled-Cavity Microinterferometer on GaAs with deformable-membrane top mirror IEEE Photonics Technology Lett. Larson, M., Pezeshki, B., Harris Jr., J., S. 1995; 4 (7): 382 - 384
  • Temperature Dependence of Phase Breaking in Ballistic Quantum Dots Phys. Rev. B Clarke, R., M., Chan, I., H., Marcus, C., M., Duruöz, C., I., Harris Jr., J., S., Campman, K. 1995; 4 (52): 2656-2659
  • Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas Appl. Phys. Lett. Lee, H., Oberman, D., B., Harris Jr., J., S. 1995; 12 (67): 1754 – 1756
  • Multiple Wavelength Vertical Cavity Laser Arrays on Patterned Substrates IEEE J. of Select Topics in Quantum Electronics Eng, L., E., Bacher, K., Yuen, W., Harris Jr., J., S., Chang-Hasnain, C., J. 1995; 1: 624 - 628
  • Interface Smoothing of High Indium Content InGaAs Layers on GaAs J. Electrochem. Soc. Kim, S., D., Lee, H., J., Harris Jr., J., S. 1995; 5 (142): 1667-1670
  • Intersubband Transitions to the Above-Barrier States Controlled by Electron Bragg Mirrors Sung, B., Chui, H., C., Martinet, E., L., Harris Jr., J., S. 1995
  • Coupled Quantum Wells for Optical Modulation Trezza, J., A., Harris Jr., J., S. 1995
  • Fabrication of GaAs Orientation Template Substrates for Quasi-Phasematched Guided-Wave Nonlinear Optics Nonlinear Guided Waves and Their Applications, OSA Technical Digest Series Optical Society of America, Washington DC Eyres, L., A., Ebert, C., B., Chui, H., C., Harris Jr., J., S., Fejer, M., M. 1995: 156-158
  • Broadly Tunable Resonant-cavity Light Emission Appl. Phys. Lett. Larson, M., C., Harris Jr., J., S. 1995; 5 (67): 590 - 592
  • 2-dimensional analysis of self-sustained pulsation for narrow-stripe AlGaAs lasers IEEE J. Selected Topics Quantum Electronics Yuri, M., Harris Jr., J., S., Takayama, T., Imafuji, O., Naito, H., Kume, M. 1995; 2 (1): 473-479
  • Growth Induced and Patterned 0-Dimensional Quantum Structures Harris, J., S., Solomon, G., S., Duruöz, C., I., Trezza, J., A., Clarke, R., M., Marcus, C., M. 1995
  • GaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxy Okada, Y., Harris Jr., J., S., Sutoh, A., Kawabe, M. 1995
  • MBE Growth of High Tc Superconductors Molecular Beam Epitaxy: Applications to Key Materials Schlom, D., G., Harris Jr., J., S. edited by Farrow, R., F. C. Noyes, Park Ridge. 1995: 505–622
  • Periodically Induced Mode Shift in Vertical Cavity Fabry Perot Etalons Grown by Molecular Beam Epitaxy Photon. Techn. Lett. Eng, L., E., Toh, K., Chang-Hasnain, C., J., Bacher, K., Harris Jr., J., S. 1995; 3 (7): 235-237
  • Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide J. Crystal Growth Oberman, D., B., Lee, H., Götz, W., K., Harris Jr., J., S. 1995; 150: 912 – 915
  • Modeling of Turn-on Jitter in Vertical Cavity Surface Emitting Lasers Elec. Lett. Harris, J., S., Ding, G., Y., Corzin, S., W., Tan, M., R., Wang, S., Y. 1995
  • Growth and Characterization of Epitaxial Strontium Barium Niobate Thin Films Prepared by Pulsed Laser Deposition J. of Electronic Materials Schwyn-Thöny, S., Youden, K., E., Harris Jr., J., S., Hesselink, L. 1995
  • 50 nm GaAs/AlAs wire structures grown on corrugated GaAs J. Vac. Sci. Technol. Miller, D., J., Harris Jr., J., S. 1994; 2 (B12): 1286 - 1289
  • ALUMINUM GRADED-BASE ALGAAS/GAAS PNP HBT WITH 37 GHZ CUT-OFF FREQUENCY 1994 IEEE International Electron Devices Meeting Kameyama, A., MASSENGALE, A., Dai, C., Harris, J. S. IEEE. 1994: 183–186
  • MULTI-LONGITUDINAL-MODE 2-DIMENSIONAL ANALYSIS OF SELF-SUSTAINED PULSATING LASER DIODES 14th IEEE International Semiconductor Laser Conference Yuri, M., Takayama, T., Imafuji, O., Sugiura, H., Naito, H., Kume, M., Itoh, K., Baba, T., Harris, J. S. IEEE. 1994: 113–114
  • APPLICATIONS OF HIGH INDIUM CONTENT INGAAS/ALGAAS QUANTUM WELLS IN THE 2-7 mu M REGIME NATO Advanced Research Workshop on Quantum Well Intersubband Transition Physics and Devices MARTINET, E. L., Vartanian, B. J., Woods, G. L., Chui, H. C., Harris, J. S., Fejer, M. M., Richman, B. A., RELLA, C. A. KLUWER ACADEMIC PUBL. 1994: 261–273
  • FREE-ELECTRON LASER NONLINEAR SPECTROSCOPY OF DOUBLY RESONANT (5.5-3.0 MU-M AND 4.1-2.1 MU-M) INGAAS/ALGAAS ASYMMETRIC QUANTUM-WELLS Conference on Quantum Well and Superlattice Physics V MARTINET, E. L., Woods, G. L., Chui, H. C., Harris, J. S., Fejer, M. M., RELLA, C. A., Richman, B. A. SPIE - INT SOC OPTICAL ENGINEERING. 1994: 331–3141
  • TUNABLE MID-INFRARED GENERATION BY MIXING OF NEAR-INFRARED WAVELENGTHS IN INTERSUBBAND QUANTUM WELLS 7th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society Chui, H. C., Woods, G. L., Fejer, M. M., MARTINET, E. L., Harris, J. S. IEEE. 1994: 175–176
  • MULTIPLE WAVELENGTH VERTICAL CAVITY LASER ARRAY ON A PATTERNED SUBSTRATE 7th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society Eng, L. E., CHANGHASNAIN, C. J., Bacher, K., Larson, M., Ding, G., Harris, J. S. IEEE. 1994: 261–262
  • LARGE ENERGY INTERSUBBAND TRANSITIONS IN HIGH INDIUM CONTENT INGAAS/ALGAAS QUANTUM WELLS NATO Advanced Research Workshop on Quantum Well Intersubband Transition Physics and Devices Chui, H. C., MARTINET, E. L., Fejer, M. M., Harris, J. S. KLUWER ACADEMIC PUBL. 1994: 251–259
  • Large Energy Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells NATO ASI: Quantum Well Intersubband Transition Physics and Device Chui, H., C., Martinet, E., L., Fejer, M., M., Harris Jr., J., S. Kluwer Academic Publishers. 1994: 251–9
  • Short Wavelength Intersubband Transitions in InGaAs/AlGaAs quantum wells grown on GaAs Appl. Phys. Lett. Chui, H., C., Martinet, W., L., Fejer, M., M., Harris Jr., J., S. 1994; 6 (64): 736-8
  • Growth of Epitaxial Strontium Barium Niobate Thin Films by Pulsed Laser Deposition Appl. Phys. Lett. Thöny, S., Schwyn, Youden, K., E., Harris Jr., J., S., Hesselink, L. 1994; 16 (65): 2018–2020
  • Reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxy on rotating substrates J. Vac. Sci. Technol. van der Wagt, J., P. A., Harris Jr., J., S. 1994; 2 (B 12): 1236-8
  • MBE Growth of In0.65Ga0.35As Quantum Wells on GaAs Substrates for 1.5µm Exciton Resonance J. Crystal Growth Kim, S., D., Lee, H., Harris Jr., J., S. 1994: 37-43
  • Growth Studies on In0.5Ga0.5As / AlGaAs Quantum Wells Grown on GaAs with a Linearly Graded InGaAs Buffer J. Vac. Sci. Technol Chui, H., C., Harris Jr., J., S. 1994; 2 (B12): 1019-1022
  • Creation and Optimization of Vertical Cavity Phase Flip Modulators J. of Appl. Phys. Trezza, J., A., Harris Jr., J., S. 1994; 10 (75): 4878-4884
  • I-V Kink in InAIAs/InGaAs MODFETs due to Weak Impact Ionization Process in the InGaAs Channel Zhou, G., G., Fischer-Colbrie, A., Harris Jr., J., S. 1994
  • Free-electron laser nonlinear spectroscopy of doubly resonant (5.5-3.0 µm and 4.1- 2.1 µm) InGaAs/AlGaAs asymmetric quantum wells Martinet, E., L., Woods, G., L., Chui, H., C., Harris Jr., J., S., Fejer, M., M., Rella, C., A. edited by Dohler, G., H., Koteles, E., S. 1994
  • Applications of High Indium Content InGaAs/AlGaAs Quantum Wells in the 2-7µm Regime NATO ASI: Quantum Well Intersubband Transition Physics and Devices Martinet, E., L., Vartanian, B., J., Woods, G., L., Chui, H., C., Harris Jr., J., S. edited by Liu, H., C., Levine, B., F., Andersson, J., Y. Kluwer Academic Publishers. 1994: 261–273
  • Reflectance and Raman Spectra of Metallic Oxides, LaSrCoO and CaSrRuO: Resemblance to Superconducting Cuprates Bozovic, I., Kim, J., H., Harris Jr., J., S., Eom, C., B., Phillips, J., M., Cheung, J., T. 1994
  • Observation of Quantum Mechanical Reflections of Electrons at an In-situ Grown GaAs / Aluminum Schottky Barrier J. Vac. Sci. Technol. Weckwerth, M., V., Wagt, J., P. A. van der, Harris Jr., J., S. 1994; 2 (B 12): 1303-5
  • Short Wavelength (5.36 µm to 1.85 µm) Nonlinear Spectroscopy of Coupled InGaAs / AlAs Intersubband Quantum Wells Martinet, E., L., Chui, H., C., Woods, G., L., Fejer, M., M., Harris Jr., J., S. 1994
  • Normal-incidence intersubband hole absorption in In0.5Ga0.5As/Al0.45Ga0.55As quantum wells Vartanian, B., J., Harris Jr., J., S. 1994
  • The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si Knall, J., Romano, L., T., Biegelsen, D., K., Bringans, R., D., Chui, H., C., Harris Jr., J., S. 1994
  • Local vibrational modes in Mg-doped gallium nitride Phys. Rev. B Brandt, M., S., Ager III, J., W., Götz, W., Johnson, N., M., Harris Jr., J., S., Molnar, R., J. 1994; 49: 14758 - 14761
  • Doubly resonant second harmonic generation of 2.0 µm light in coupled InGaAs/AlAs Quantum Wells Appl. Phys. Lett. Chui, H., C., Martinet, E., L., Woods, G., L., Fejer, M., M., Harris Jr., J., S. 1994; 25 (64): 3365 - 3367
  • Determination of AlAs mole fraction in Alx Ga1-xAs using Raman spectroscopy and x-ray diffraction J. Vac. Sci. Technol. Solomon, G., S., Kirillov, D., Chui, H., C., Harris Jr., J., S. 1994; 2 (B12): 1078-1081
  • Phase-Breaking Rates from Conductance Fluctuations in a Quantum Dot Marcus, C., M., Clarke, R., M., Chan, I., H., Duruöz, C., I., Harris Jr., J., S. 1994
  • Observation of Resonant Tunneling Through Localized Continuum States in Electron Wave Interference Diodes Appl. Phys. Lett. Carnahan, R., E., Maldonado, M., A., Martin, K., P., Higgins, R., J., Van der Wagt, J., P. A., Harris Jr., J., S. 1994; 18 (64): 2403-2405
  • High Contrast Asymmetric Fabry-Perot Appl Phys. Lett. Trezza, J., A., Pezeshki, B., Larson, M., C., Lord, S., M., Harris Jr., J., S. 1993; 74: 452-454
  • Large, Low-Voltage Absorption Changes and Absorption Bistability in GaAs/AlGaAs/InGaAs Asymmetric Quantum Wells J. Appl. Phys. Trezza, J., A., Larson, M., C., Lord, S., M., Harris Jr., J., S. 1993; 74: 1972-1978
  • Electroabsorption Modulators Operating at 1.3 µm on GaAs substrates Optical and Quantum Electronics Lord, S., M., Pezeshki, B., Harris Jr., J., S. 1993; 25: 5953-5964
  • The Effect of Si Planar Doping on DX Centers in Al0.26Ga0.74As J. Crystal. Growth. Solomon, G., S., Roos, G., Harris Jr., J., S. 1993; 127: 737-741
  • 1.3µm Electroabsorption Reflection Modulators on GaAs Appl. Phys. Lett. Lord, S., M., Trezza, J., A., Larson, M., C., Pezeshki, B., Harris Jr., J., S. 1993; 63: 806-808
  • Schwabish Gmundt, Germany Wagt, J., P. A van, Harris Jr., J., S. 1993
  • 1.3 µm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer Lord, S., M., Pezeshki, B., Kim, S., D., Harris Jr., J., S. 1993
  • Low Voltage, Low Chirp, Absorptively Bistable Transmission Modulators Using Type IIA and Type IIB In0.3Ga0.7As/Al0.33Ga0.67As/In0.15Ga0.85As Asymmetric Coupled Quantum Wells J. Appl. Phys. Trezza, J., A., Larson, M., C., Lord, S., M., Harris, J., S. 1993; 11 (74): 6495-6502
  • Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates Jpn. J. Appl. Phys. Part 1 Ito, H., Harris Jr., J., S. 1993; 32 (11A): 4923-4927
  • Critical Passivation Ledge Thickness in AlGaAs/GaAs Heterojunction Bipolar Transistors J. Vac. Sci. Technol. Liu, W., Harris, J., S. 1993; B 11: 6-9
  • Zero Chirp Quantum Well Asymmetric Fabry-Perot Reflection Modulators Operating Beyond the Matching Condition J. Appl. Phys. Trezza, J., A., Larson, M., C., Harris Jr., J., S. 1993; 12 (74): 7061-7066
  • Surface-emitting Second-harmonic Generation in a Semiconductor Vertical Resonator Optics Lett. Lodenkamper, R., Bortz, M., L., Fejer, M., M., Bacher, K., Harris Jr., J., S. 1993; 21 (18): 1798-1800
  • Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells Appl. Phys. Lett. Chui, H., C., Lord, S., M., Martinet, E., Fejer, M., M., Harris Jr., J., S. 1993; 3 (63): 364-366
  • High Contrast Reflection Electro-absorption Modulators with Zero Phase Change Appl. Phys. Lett. Trezza, J., S., Pezeshki, B., Larson, M., C., Lord, S., M., Harris Jr., J., S. 1993; 63: 452-454
  • Hydrogen Passivation of Nonradiative Defects in InGaAs/AlxGa1-xAs Quantum Wells J. Appl. Phys. Lord, S., M., Roos, G., Harris, J., S., Johnson, N., M. 1993
  • Cut-off Frequency and D.C. Gain of Heterojunction Bipolar Transisitrs Int. J. Electronics Liu, W., Harris Jr., J., S. 1993; 74: 401-106
  • The Effect of Si Doping on DX Centers in Al.26Ga.74As Solomon, G., S., Roos, G., Harris Jr., J., S. 1993
  • Graded Buffer Layers for Molecular Beam Epitaxial Growth of High In Content InGaAs On GaAs for Optoelectronics Lord, S., M., Pezeshki, B., Marshall, A., F., Harris Jr., J., S., Fernandez, R., Harwit, A. 1993
  • Simulation of RHEED Intensity Oscillations During MBE Growth J. Crystal. Growth. van der Wagt, J., P. A., Harris Jr., J., S. 1993; 127: 1025-1029
  • Phase Characteristics of Reflection Electro-Absorption Modulators Appl. Phys. Letts. Liu, D., Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1993; 62: 2158-2160
  • Lattice Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates IEEE Trans. Ed Ito, H., Harris Jr., J., S. 1993
  • Enhancement of Photoluminescence Intensity in InGaAs/Al(x)Ga(1-x)As Quantum Wells by Hydrogenation Appl. Phys. Lett. Lord, S., M., Roos, G., Pezeshki, B., Harris Jr., J., S., Johnson, N., M. 1992; 60: 2276-2278
  • LOW-FREQUENCY NOISE CHARACTERIZATION OF NPN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS 18TH INTERNATIONAL SYMP ON GALLIUM ARSENIDE AND RELATED COMPOUNDS Costa, D., Harris, J. S. IOP PUBLISHING LTD. 1992: 323–328
  • ELECTROABSORPTION IN INGAAS/ALGAAS QUANTUM-WELLS 18TH INTERNATIONAL SYMP ON GALLIUM ARSENIDE AND RELATED COMPOUNDS Pezeshki, B., Lord, S. M., Harris, J. S. IOP PUBLISHING LTD. 1992: 437–441
  • Stacking Fault Stability in GaAs/Si Hetero-Epitaxial Growth Crystal Growth Kim, S., D., Harris Jr., J., S. 1992; 123: 439-444
  • Molecular Beam Epitaxy Growth of Vertical Cavity Optical Devices with In-Situ Corrections Appl. Phy. Lett. Bacher, K., Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1992; 61: 1387-1889
  • Ideality Factor of Extrinsic Base Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors Elect. Lett. Harris, J., S., Liu, W. 1992; 28: 379-380
  • High-Performance Microwave AlGaAs-InGaAs Pnp HBT with High-DC Current Gain IEEE Microwave & Guided Wave Letts. Liu, W., Costa, D., Hill D., Harris Jr., J., S. 1992: 331-333
  • Geometrical Growth Rate Nonuniformity Effects on Reflection High-Energy Electron Diffraction Signal Intensity Decay J. Vac. Sci. Technol. B van der Wagt, J., P. A., Bacher, K., L., Solomon, G., S., Harris Jr., J., S. 1992: 825-828
  • Effects of Replacing a Portion of the AlGaAs Base-Emitter Junction of Heterojunction Bipolar Transistors by GaAs Int. Jrnl. Elect. Liu, W., Harris Jr., J., S. 1992; 72: 401-408
  • Design and Performance of a Low-Threshold-Current Grating-Coupled Surface-Emitting Laser Solid State Elect. Takigawa, S., Bacher, K., Aronson, L., B., Harris Jr., J., S. 1992; 35: 1241-1245
  • Derivation of the Emitter-Collector Transit Time of Heterojunction Bipolar Transistors Solid State Elect. Liu, W., Costa, D., Harris Jr., J., S. 1992; 35: 541-545
  • Dependence of the Base Crowding Effect on Base Doping and Thickness for Npn AlGaAs/GaAs HBTs Elect. Lett. Liu, W., Harris, J., S. 1992; 22 (27): 2048-2050
  • Contact Impedance in Heterojunction Bipolar Transistors Solid State Elect. Liu, W., Dai, C., Harris Jr., J., S. 1992; 35: 547-552
  • Hydrogen Passivation of Defects in InGaAs/AlxGa1-xAs Quantum Wells Lord, S., M., Roos, G., Pezeshki, B., Harris Jr., J., S. 1992
  • Optical Phase Modulator Utilizing Electroabsorption in a Fabry-Perot Cavity Appl. Phys. Lett. Pezeshki, B., Williams, G., A., Harris Jr., J., S. 1992; 60: 1061-1063
  • Nonlinear Optical Properties and Ultrafast Response of GaAs/AlAs Type-II Quantum Wells IEEE JQE Fu, W., S., Harris Jr., J., S., Binder, R., Koch, S., W., Klem, J., F., Olbright, G., R. 1992; 28: 2404-2415
  • Low-Conductance Drain (LCD) Design of InAlAs/InGaAs/InP HEMT’s IEEE Electron Dev. Lett. Pao, Y., C., Harris Jr., J., S. 1992; 13: 535-537
  • Low Threshold Current Grating-Coupled Surface-Emitting Strained-InGaAs Single Quantum Well Laser with GaAs Optical Confinement Structure Appl. Phys. Lett. Takigawa, S., Bacher, K., Aronson, L., B., Harris Jr., J., S. 1992; 60: 265-267
  • Free Chare-Carrier Plasmons in Ba1-x KxBi03: A Close Relation to Cuprate Superconductors Phys. Rev. B Bozovic, I., Kim, J., H., Harris, J., S., Hellman, E., S., Hartford, E., H., Chan, P., K. 1992; 46: 1182-1187
  • Effects of Emitter-Base Contact Spacing on the Current Gain in Heterojunction Bipolar Transisitors Jpn. J. Appl. Phy. Liu, W., Harris, J., S. 1992; 31: 2349-2351
  • Current Gain of Graded AlGaAs/GaAs Heterojunction Bipolar Transistors With and Without a Base Quasi-Electric Field IEEE Tran. Elect. Dev. Liu, W., Costa, D., Harris Jr., J., S. 1992; 39: 2422-2429
  • Current Dependence of Base-Collector Capacitance of Bipolar Transistors Solid State Elect. Liu, W., Harris Jr., J., S. 1992; 35: 1051-1057
  • A High-Gain AlGaAs/GaAs Heterojunction Bipolar Transistor Grown on Silicon Substrate Jpn. J. Appl. Phys. Harris, J., S, Liu, W., Kim, S., D. 1992; 31: 2656-2659
  • 1.3 µm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer J. Crystal Growth. Lord, S., M., Pezeshki, B., Kim, S., D., Harris, J., S. 1992: 759-764
  • Monolithic Integration GaAs and Si Bipolar Devices for Optical Interconnect Systems Nasserbakht, G., N., Adkisson, J., W., Wooley, B., A., Harris Jr., J., S., Kamins, T., I., Wong, S., S. 1992
  • InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substratee Electronics Letters Ito, H., Harris Jr., J., S. 1992; 7 (28): 655-656
  • Diode Ideality Factor for Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transisitors IEEE Trans. Elect. Dev. Liu, W., Harris, J., S. 1992; 39: 2726-2732
  • An Advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Applications Jpn. J. Appl. Phys. Liu, W., Dai, C., Harris Jr., J., S. 1992; 31: L452-L454
  • X-Valley Tunneling in Single AlAs Barriers J. Appl. Phys. Boykin, T., B., Harris Jr., J., S. 1992; 72: 988-992
  • Visible Wavelength Fabry-Perot Reflection Modulator Using Indirect-Gap AlGaAs/As Elect. Lett Pezeshki, B., Liu, D., Lord, S., M., Harris Jr., J., S. 1992; 28: 1170-1171
  • Parastic Conduction Current in the Passivation Ledge of AlGaAs/GaAs Heterojunction Bipolar Transistors Solid State Elect. Liu, W., Harris Jr., J., S. 1992; 35: 891-895
  • Optical Gain and Ultrafast Nonlinear Response in GaAs/AlAs Type-II Quantum Wells Appl. Phys. Lett. Fu, W., S., Olbright, G., R., Klem, J., F., Harris Jr., J., S. 1992; 14: 1661-1663
  • Mesa Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors with an Emitter-Base-Emitter Structure J. Vac. Sci. Technol. B Liu, W., Harris, J., S. 1992: 1285-1290
  • Low-Frequency Noise Properties of N-p-n AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Trans. Elect. Dev. Costa, D., Harris Jr., J., S. 1992; 39: 2383-2394
  • Investigation of High In Content InGaAs Quantum Wells Grown on GaAs by Molecular Beam Epitaxy Elect. Lett. Lord, S., M., Pezeshki, B., Harris Jr., J., S. 1992; 28: 1193-1195
  • Hydrogen Passivation of Si and Be Dopants in InAlAs Roos, G., Johnson, N., M., Pao, Y., C., Harris Jr., J., S., Herring, C. 1992
  • Noninterferometric Optical Subtraction using Reflection-Electroabsorption Modulators Optics Letters Shoop, B., L., Pezeshki, B., Goodman, J., W., Harris Jr., J., S. 1992; 17: 58-60
  • Laser-Power Stabilization Using a Quantum-Well Modulator IEEE Photonics Tech. Lett. Shoop, B., L., Pezeshki, B., Goodman, J., W., Harris Jr., J., S. 1992; 4: 136-139
  • Influence of Dislocations on the DC Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Elect. Dev. Lett. Ito, H., Nakajima, O., Furuta, T., Harris Jr., J., S. 1992; 13: 232-234
  • Anti-Resonances in the Transmission of a Simple Two-State Model Phys. Rev. B Boykin, T., B., Pezeshki, B., Harris Jr., J., S. 1992; 19 (46): 12769-12772
  • Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing Appl. Phys. Lett. Yamada, N., Harris, J., S. 1992; 20 (60): 2463-65
  • GaAs/AlAs Quantum Wells for Electroabsorption Modulators Appl. Phys. Lett. Pezeshki, B., Lord, S., M., Boykin, T., B., Harris Jr., J., S. 1992; 60: 2779-2781
  • ACCUMULATION-MODE GAALAS GAAS BIPOLAR-TRANSISTOR 1991 INTERNATIONAL CONF ON SOLID STATE DEVICES AND MATERIALS ( SSDM 91 ) Matsumoto, K., Ishii, M., Morozumi, H., Imai, S., Sakamoto, K., Hayashi, Y., Liu, W., Costa, D., Ma, T., MASSENGALE, A., Harris, J. S. JAPAN SOC APPLIED PHYSICS. 1991: 3846–49
  • GROWTH OF SUPERCONDUCTING BI2SR2CAN-1CUNOX THIN-FILMS BY ATOMICALLY LAYERED EPITAXY 6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY Eckstein, J. N., Bozovic, I., Schlom, D. G., Harris, J. S. ELSEVIER SCIENCE BV. 1991: 973–77
  • MOLECULAR-BEAM EPITAXIAL-GROWTH AND STRUCTURAL DESIGN OF IN0.52AL0.48AS/IN0.53GA0.47AS/INP HEMTS 6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY Pao, Y. C., Harris, J. S. ELSEVIER SCIENCE BV. 1991: 489–94
  • ACCURATE MEASUREMENT OF MBE SUBSTRATE-TEMPERATURE 6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY Lee, W. S., Yoffe, G. W., Schlom, D. G., Harris, J. S. ELSEVIER SCIENCE BV. 1991: 131–35
  • QUANTUM-WELLS AND ARTIFICIALLY STRUCTURED MATERIALS FOR NONLINEAR OPTICS CONF ON PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS Harris, J. S., Fejer, M. M. SPIE - INT SOC OPTICAL ENGINEERING. 1991: 262–273
  • Direct Extraction of the AlGaAs/GaAs Heterojunction Bipolar Transistor Small-Signal Equivalent Circuit IEEE Transactions on Electron Dev. Costa, D., Liu, W., Harris Jr., J., S. 1991; 38: 2018-2024
  • Lateral Resonant Tunneling Transistors Employing Field-Induced Quantum Wells and Barriers Chou, S., Y., Allee, D., R., Pease, R., F., Harris Jr., J., S. 1991
  • Geometrical Growth Rate Nonuniformity Effects on RHEED Signal Intensity Decay Wagt, J., P. A. van der, Bacher, K., L., Solomon, G., S., Harris Jr., J., S. 1991
  • Femtosecond Gain Dynamics in Semiconductors Harris, J., S., Fu, W., S., Poirier, G., E., Bryan, R., P., Klem, J., F., Olbright, G., R. 1991
  • Thermal Dissociation Energy of the Si-H Complex in n-type GaAs Appl. Phys. Lett. Roos, G., Johnson, N., M., Herring, C., Harris, J., S. 1991; 59: 461-463
  • Second-Order Susceptibility in Asymmetric Quantum Wells and its Control by Proton Bombardment Appl. Phys. Lett. Yoo., S., J. B., Fejer, M., M., Byer, R., L., Harris Jr., J., S. 1991; 58: 1724-1726
  • Optical Study of Plasmons in Tl2Ba2Ca2Cu3O10 Phys. Rev. Bozovic, I., Kim, J., H., Harris Jr., J., S., Lee, W., Y. 1991; 43: 1169-1172
  • Accurate Measurement of MBE Substrate Temperature J. Crystal Growth Lee, W., S., Yoffee, G., W., Schlom, D., G., Harris Jr., J., S. 1991; 111: 131-135
  • Reflection Electro-Absorption Modulator with High Reflectivity Change in a Novel Normally-Off Configuration Thomas, D., Pezechki, B., Harris Jr., J., S. 1991
  • Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes Superlattices & Microstructures Harris, J., S., Rascol, J., J. L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. 1991; 10: 175-178
  • Reduction of Low-Frequency Noise In Npn AlGaAs/GaAs HBTs Costa, D., Liu, W., Harris Jr., J., S. 1991
  • Electro-Absorption in InGaAs/AlGaAs Quantum Wells Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1991
  • Dynamic Optical Grating for Laser Beam Steering Applications Pezeshki, B., Apte, R., Lord, S., M., Harris Jr., J., S. 1991
  • Accumulation mode GaAlAs/GaAs bipolar transistor Harris, J., S., Matsumoto, K., Ishii, M., Morozumi, H., Imai, S., Sakamoto, K. 1991
  • Threshold Reduction in Strained InGaAs Single Quantum Well Lasers by Rapid Thermal Annealing Appl Phys. Lett. Yamada, N., Roos, G., Harris Jr., J., S. 1991; 59: 1040-1042
  • Plasmons in High-Temperature Superconductors Physica C Kim, J., H., Bozovic, I., Harris Jr., J., S., Lee, W., Y., Eom, C., B., Geballe, T., H. 1991; 185: 1019-1020
  • Enhancement of Optical Reflectivity of High-Tc Superconducting Films by Ion Milling Appl. Phys. Letts. Kim, J., H., Char, K., Bozovic, I., Lee, W., Y., Kapitulnik, A., Harris Jr., J., S. 1991; 58: 2558-2560
  • A Tight Binding Model for GaAs/AlAs Resonant Tunnel Diodes Phys. Rev.B Boykin, T., B., van der Wagt, J., P. A., Harris Jr., J., S. 1991; 43: 4777-4784
  • Plasmons in High -Tc Cuprate Superconductors Kim, J., H., Bozovic, I., Harris Jr., J., S., Lee, W., Y., Eom, C., B., Geballe, T., H. edited by Ashkenazy, J., Vezzol, G. 1991
  • Physical Origin of the High Output Conductance in In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs Pao, Y., C., Harris Jr., J., S. 1991
  • Accumulation mode GaAlAs/GaAs bipolar transistor with two dimensional hole gas base Harris, J., S., Matsumoto, K., Ishii, M., Morozumi, H., Imai, S., Sakamoto, K. 1991
  • Surface Emitting Second Harmonic Generation in Vertical Resonator Elect. Ltts. Lodenkamper, R., Fejer, M., M., Harris Jr., J., S. 1991; 27: 1882-1884
  • Preparation of Optically Smooth Surfaces of High-Tc Superconducting Films Kim, J., H., Kapitulnik, A., Harris Jr., J., S., Char, K., Bozovic, I., Lee, W., Y. 1991
  • Low-Frequency Noise Characterization of Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Costa, D., Harris, J., S. 1991
  • Femtosecond-gain Spectroscopy of GaAs Kim, J., H., Kapitulnik, A., Harris Jr., J., S., Char, K., Bozovic, I., Lee, W., Y. 1991
  • Theoretical Comparison of Base Bulk Recombination Current and Surface Recombination Current of a MESA AlGAAs/GaAs Heterojunction Bipolar Transistor Solid State Electronics Liu, W., Costa, D., Harris Jr., J., S. 1991; 34: 1119-1123
  • The Design of GaAs Resonant Tunneling Diodes with Peak Current Densities over 2x105 a cm-2 J. Appl Phys. Wolak, E., Ozbay, E., Park, B., G., Diamond, S., K., Bloom, D., M., Harris Jr., J., S. 1991; 69: 3345-3350
  • Study of Optical Plasmons InLa1.85Sr0.15Cu2O4 Physica C Harris, J., S., Kim, J., H., Bozovic, I., Eom, C., B., Geballe, T., H. 1991; 174: 435-439
  • Quantum Well Modulators for Optical Beam Steering Applications IEEE Phot. Tech. Lett. Pezeshki, B., Apte, R., B., Lord, S., M., Harris, J., S. 1991; 3: 790-792
  • Novel Cavity Design for High Reflectivity Changes in a Normally Off Electroabsorption Modulator Appl. Phys. Lett. Pezeshki, B., Thomas, D., Harris Jr., J., S. 1991; 58: 813-815
  • Electroabsorptive Modulators in InGaAs/AlGaAs Appl Phys. Lett. Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1991; 59: 888-890
  • Effect of High Current Density and Doping Concentration on the Characteristics of GaAs/AlAs Vertically Integrated Resonant Tunneling Diodes J. Appl. Phys. Park, B., G., Wolak, E., Harris Jr., J., S. 1991; 11 (70): 7141 - 7148
  • Comparison of the Effects of Surface Passivation and Base Quasi-Electric Fields on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors Grown on GaAs and Si Substrates Appl Phys. Lett. Liu, W., Costa, D., Harris Jr., J., S. 1991; 59: 691-693
  • The Relative Effect on the Oxygen Concentration in YBa2Cu3O7-d of Atomic and Ionic Oxygen Fluxes, Produced by a Small Compact Electron Cyclotron Resonance Source J. Vac. Sci. Technol. Yamamoto, K., Hammond, R., H., Harris Jr., J., S. 1991; A9: 2587-2593
  • Molecular Beam Epitaxial Growth and Structural Design In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs J. Crystal. Growth Pao, Y., C., Harris Jr., J., S. 1991; 111: 489-494
  • High Output Conductance of InAlAs/InGaAs/InP MODFET due to Weak Impact Ionization in the InGaAs Channel IEDM Technical Digest Harris, J., S., Zhou, G., G., Fischer-Colbrie, A., Miller, J., Pao, Y., C., Hughes, B. 1991: 247-250
  • AlGaAs/AlAs QW Modulator for 6328Å Operation Elect. Letts. Pezeshki, B., Lord, S., M., Boykin, T., B., Shoop, B., L., Harris Jr., J., S. 1991; 27: 1971-1973
  • OPTIMIZATION OF MODULATION RATIO AND INSERTION LOSS IN REFLECTIVE ELECTROABSORPTION MODULATORS APPLIED PHYSICS LETTERS Pezeshki, B., Thomas, D., Harris, J. S. 1990; 57 (15): 1491-1492
  • ATOMICALLY LAYERED HETEROEPITAXIAL GROWTH OF SINGLE-CRYSTAL FILMS OF SUPERCONDUCTING BI2SR2CA2CU3OX APPLIED PHYSICS LETTERS Eckstein, J. N., Bozovic, I., VONDESSONNECK, K. E., Schlom, D. G., Harris, J. S., BAUMANN, S. M. 1990; 57 (9): 931-933
  • NOVEL DOUBLY SELF-ALIGNED ALGAAS/GAAS HBT ELECTRONICS LETTERS LIU, W. U., Costa, D., Harris, J. 1990; 26 (17): 1361-1362
  • INSITU GROWTH OF SINGLE-CRYSTAL BI2SR2CANCUN+1OX THIN-FILMS BY ATOMICALLY LAYERED EPITAXY Eckstein, J. N., Bozovic, I., Schlom, D. G., Chen, Z. J., Harris, J. S. SPRINGER. 1990: 59–59
  • IMPROVED DESIGN OF ALAS/GAAS RESONANT TUNNELING DIODES APPLIED PHYSICS LETTERS Cheng, P., Harris, J. S. 1990; 56 (17): 1676-1678
  • Growth of untwinned Bi2Sr2Ca2Cu3Ox Thin Films by Atomically Layered Epitaxy Appl. Phys. Lett. Eckstein, J., N., Bozovic, I., Dessonneck, K., E. von, Schlom, D., G., Harris Jr., J., S., Baumann, S., M. 1990: 1049-1051
  • NEW LATERAL RESONANT TUNNELING FETS FABRICATED USING MOLECULAR-BEAM EPITAXY AND ULTRA-HIGH RESOLUTION ELECTRON-BEAM LITHOGRAPHY 16TH INTERNATIONAL SYMP ON GALLIUM ARSENIDE AND RELATED COMPOUNDS Chou, S. Y., Allee, D. R., Pease, R. F., Harris, J. S. IOP PUBLISHING LTD. 1990: 875–879
  • Superstructure in Thin Films of Bi-Based Compounds on MgO J. J. Appl. Phy Harris, J., S., Kojima, K., Schlom, D., G., Kuroda, K., Tanioku, M., Hamanaka, K. 1990; 9: L1638-L1641
  • From Bloch Functions to Quantum Wells International J. Modern Physics B Harris Jr., J., S. 1990; 6 (4): 1149-1179
  • A High Frequency Pnp AlGaAs/InGaAs Heterojunction Bipolar Transistor with an Ultrathin Strained Base Electron. Lett. Liu, W., Hill, D., G., Harris Jr., J., S. 1990; 26: 2000-2002
  • Optical Anisotropy of Bi2Sr2CaCu208 Phys. Rev. Kim, J., H., Bozovic, I., Mitzi, D., B., Kapitulnik, A., Harris Jr., J., S. 1990; 10 (B41): 7251-7253
  • Impact of Surface Layer on In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors IEEE Electron Dev. Lttrs Pao, Y., C., Nishimoto, C., Riaziat, M., Majidi-Ahy, R., Bechtel, N., G., Harris Jr., J., S. 1990; 7 (11): 315-313
  • Characterization of Surface-Undoped In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors IEEE Tran. Electron. Dev. Pao, Y., C., Nishimoto, C., K., Majidi-Ahy, R., Archer, J., Bechtel, N., G., Harris Jr., J., S. 1990; 10 (37): 2165-2170
  • In-Situ Growth of Single Crystal Bi2Sr2CanCun+1Ox Thin Films by Atomically Layered Epitaxy Eckstein, J., N., Bozovic, I., Schlom, D., G., Chen, Z., J., Harris Jr., J., S. 1990
  • Atomically Layered Heteroepitaxy of High Temperature Superconducting Thin Films: Metastable Phases and Superlattice Structures Eckstein, J., N., Bozovic, I., Dessonneck, K., E. von, Schlom, D., G., Harris Jr., J., S. 1990
  • 77K Photoluminescence Investigation of Residual Stress in MBE-Grown GaAs/Si Layers Adkisson, J., W., Harris, J., S., George, T., Weber, E., R. 1990
  • Influence of Ballistic Electrons on the Device Characteristics of Vertically Integrated Resonant Tunneling Diodes Appl. Phys. Lett Harris, J., S., Rascol, J., J. L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. 1990; 14 (58): 1482-1484
  • RESONANT TUNNELING OF 1-DIMENSIONAL ELECTRONS ACROSS AN ARRAY OF 3-DIMENSIONALLY CONFINED POTENTIAL WELLS SUPERLATTICES AND MICROSTRUCTURES Allee, D. R., Chou, S. Y., Harris, J. S., Pease, R. F. 1990; 7 (2): 131-134
  • Defect Structures in MBE Grown GaAs on Si Kim, S., D., Ma, T., Rek, Z., Harris Jr., J., S. 1990
  • Molecular Beam Epitaxy-a Path to Novel High Tc Superconductors Harris, J., S., Schlom, D., G., Eckstein, J., N., Bozovic, I., Chen, Z., J., Marshall, A., F. 1990
  • Two Selective Etching Solutions for GaAs on InGaAs and GaAs/AlGaAs on InGaAs J. Electrochem. Soc. Hill, D., G., Lear, K., L., Harris Jr., J., S. 1990; 9 (137): 2913-2914
  • Molecular Beam Epitaxial Growth of Layered Bi-Sr-Ca-Cu-O Compounds J. Cryst. Growth. Harris, J., S., Schlom, D., G., Marshall, A., F., Sizemore, J., T., Chen, Z., J., Eckstein, J., N. 1990: 361-375
  • Quantum Wells and Artificially Structured Materials for Non-Linear Optics Harris Jr., J., S., Fejer, M., M. 1990
  • Improved Design of AlAs/GaAs Resonant Tunneling Diodes Cheng, P., Harris Jr., J., S. 1990
  • A new Direct Method for Determining the Heterojunction Bipolar Transistor Equivalent Circuit Model Costa, D., Liu, W., Harris Jr., J., S. 1990
  • Optimization of Reflection Electro-Absorption Modulators Pezeshki, B., Thomas, D., Harris Jr., J., S. 1990
  • In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Bozovic, I., Eckstein, J., N., Schlom, D., G., Harris Jr., J., S. 1990
  • Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique Schlom, D., G., Marshall, A., F., Harris Jr., J., S., Bozovic, I., Eckstein, J., N. 1990
  • Comparison of Pnp AlGaAs/GaAs Heterojunction Bipolar Transistor with and Without Base Quasielectric Field Liu, W., Hill, D., Costa, D., Harris Jr., J., S. 1990
  • Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes Harris, J., S., Rascol, J., L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. 1990
  • From Bloch Functions to Quantum Wells Conductivity and Magnetism, The Legacy of Felix Bloch Harris Jr., J., S. edited by Little, William, A. World Scientific, Singapore. 1990: 23–53
  • Wannier-Stark Localization in a Strained InGaAs/GaAs Superlattice Appl. Phys. Lett. Pezeshki, B., Thomas, D., Harris Jr., J., S. 1990; 20 (57): 2116-2117
  • Uniform, High-Gain AlGaAs/In0.05Ga0.95As/GaAs P-n-p Heterojunction Bipolar Transistors by Dual Selective Etch Process IEEE Electron Device Lett. Hill, D., G., Lee, W., S., Ma, T., Harris Jr., J., S. 1990; 11: 425-427
  • Large Reflectivity Modulation Using InGaAs-GaAs IEEE Photon. Techn. Lett. Pezeshki, B., Thomas, D., Harris Jr., J., S. 1990; 2: 807-809
  • QUANTUM INTERFERENCE DEVICES FABRICATED USING MOLECULAR-BEAM EPITAXY AND ULTRA-HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY Chou, S. Y., Allee, D. R., Pease, R. F., Harris, J. S. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1989: 2617–18
  • RESONANT TUNNELING DIODES FOR SWITCHING APPLICATIONS APPLIED PHYSICS LETTERS DIAMOND, S. K., Ozbay, E., Rodwell, M. J., Bloom, D. M., Pao, Y. C., Harris, J. S. 1989; 54 (2): 153-155
  • Effect of Emitter-Base Spacing on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Electron Device Letters Lee, W., S., Ueda, D., Ma, T., Pao, Y., C., Harris Jr., J., S. 1989: 200-202
  • CHARACTERIZATION OF ALGAAS AND GAAS MATERIALS AND INTERFACES GROWN ON MISORIENTED-(110) GAAS BY MBE 15TH INTERNATIONAL SYMP ON GALLIUM ARSENIDE AND RELATED COMPOUNDS Larkins, E. C., Liu, D., Pao, Y. C., Lin, M. J., Yoffe, G. W., Harris, J. S. INST PHYSICS PUBL DIV. 1989: 53–56
  • The X-Valley Transport in GaAs/AlAs Triple Barrier Structures J. Appl. Phys. Cheng, P., Park, B., G., Kim, S., D., Harris Jr., J., S. 1989; 12 (65): 5199-5201
  • Influence of As4/Ga Flux Ratio on Be Incorporation in Heavily Doped GaAs Grown by Molecular Beam Epitaxy J. Crystal Growth Pao, Y., C., Franklin, J., Harris Jr., J., S. 1989: 301-304
  • GaAs/AlGaAs Power HBT on Silicon Substrate Electron. Lett. Ueda, D., Lee, W., S., Ma, T., Costa, D., Harris Jr., J., S. 1989; 19 (25): 1968-1269
  • Resonant Tunneling Diodes for Switching Applications Harris, J., S., Diamond, S., K., Özbay, E., Rodwell, M., J. W., Bloom, D., M., Pao, Y., C. 1989
  • Molecular Beam Epitaxy AlGaAs/GaAs Grown in the Presence of Hydrogen J. Crystal Growth Pao, Y., C., Liu, D., Harris Jr., J., S. 1989: 305-308
  • MBE Growth of High Critical Temperature Superconductors J. Crystal Growth Harris Jr., J., S., Eckstein, J., N., Eckstein, J., N., Schlom, D., G. 1989: 607-616
  • Effect of Bulk Recombination Current on the Current Gain of GaAs/AIGaAs Heterojunction Bipolar Transistors in GaAs-on-Si IEEE Electron Dev. Lett. Ma, T., Lee, W., S., Adkisson, J., Harris Jr., J., S. 1989; 10 (10): 458-460
  • AlGaAs/InGaAs Strained-Base PnP Heterojunction Bipolar Transistors Electron. Lett. Hill, D., G., Lee, W., S., Ma, T., Harris Jr., J., S. 1989: 993-995
  • Variation of the Spacer Layer Between two Resonant Tunneling Diodes Appl. Phys. Lett. Wolak, E., Park, B., G., Lear, K., L., Harris Jr., J., S. 1989: 1871-1873
  • Monolithically Integrated Fiber-Optic Front-End Receiver in GaAs on Si Technology Nasserbakht, N., Adkisson, J., W., Kamins, T., I., Wooley, B., A., Harris Jr., J., S. 1989
  • Microwave Characteristics of MBE Grown Resonant Tunneling Devices Owens, J., M., Halchin, D., J., Lear, K., L., Lee, W., S., Harris Jr., J., S. 1989
  • Improved Vertically Integrated Resonant Tunneling Diodes Park, B., G., Wolak, E., Lear, K., L., Harris Jr., J., S. 1989
  • Photonics Brief Lessons in High Technology: Understanding the End of this Century to Capitalize on the Next Harris, J., S. edited by Meindl, James, D. Portable Stanford, Stanford, CA. 1989: 31–61
  • Reduction of Gallium-Related Oval Defects J. Vac. Sci. & Technol. Schlom, D., G., Lee, W., S., Ma, T., Harris Jr., J., S. 1989; 2 (B7): 296-298
  • Many-Body Effects in the Luminescence Spectra of GaAs/AlGaAs Modulation Doped Heterostructures ACTA Physica Polonica Munnix, S., Bimberg, D., Mars, D., E., Miller, J., N., Larkins, E., C., Harris Jr., J., S. 1989: 33-37
  • Influence of the As:Ga Flux Ratio on Growth Rate, Interface Quality, and Impurity Incorporation in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy Appl. Phys. Lett. Köhrbröck, R., Munnix, S., Bimberg, D., Larkins, E., C., Harris Jr., J., S. 1989; 7 (54): 623-625
  • Growth Kinetics, Impurity Incorporation, Defect Generation, and Interface Quality of MBE-grown AlGaAs/GaAs Quantum Wells: Role of group III and group V Fluxes J. Vac. Sci. Technol. Munnix, S., Bauer, R., K., Bimberg, D., Harris Jr., J., S., Köhrbrück, R., Larkins, E., C. 1989; 4 (B7): 704-709
  • Umklapp Electron-Electron Scattering Resistivity in YBa2Cu3O7-x IEEE Elect. Dev. Lett. Harris, J., S., Hellman, E., S. 1989; 3 (10): 104-106
  • Observation of Extremely Large Quadratic Susceptibility at 9.6 - 10.8µm in Electric-field-biased AlGaAs Quantum Wells Phys, Rev. Lett. Fejer, M., M., Yoo, S., J. B., Byer, R., L., Harwit, A., Harris Jr., J., S. 1989; 1 (62): 1041-1044
  • Development of Molecular Beam Epitaxial Growth of High Temperature Superconducting Compounds Eckstein, J., N., Harris Jr., J., S., Schlom, D., G., Bozovic, I., von Dessoneck, K., E., Chen, Z., J. 1989
  • New Lateral Resonant Tunneling FETs Fabricated Using Molecular Beam Epitaxy and Ultra-High Resolution Electron Beam Lithography Chou, S., Y., Allee, D., R., Pease, R., F. W., Harris Jr., J., S. 1989
  • Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds Harris, J., S., Schlom, D., G., Eckstein, J., N., Bozovic, I., Marshall, A., F., Sizemore, J., T. 1989
  • The Effect of Si Doping in AlAs Barrier Layers of AlAs-GaAs-AlAs Double Barrier Resonant Tunneling Diodes Appl. Phys. Lett. Cheng, P., Harris Jr., J., S. 1989; 6 (55): 572-574
  • Phase Characterization of Dysprosium Barium Copper Oxide Thin Films Grown on Strontium Titanate by Molecular Beam Epitaxy J. Mater. Res. Hellman, E., S., Schlom, D., G., Marshall, A., F., Streiffer, S., K., Harris Jr., J., S., Beasley, M., R. 1989; 3 (4): 476-495
  • Fabrication of Resonant Tunneling Diodes for Integrated Circuit and Microwave Applications IEEE Electron Device Letters Harris, J., S., Diamond, S., K., Ozbay, E., Rodwell, M., J. W., Bloom, D., M., Pao, Y., C. 1989: 104-106
  • Epitaxial Growth of High Temperature Superconducting Thin Films J. Vac. Sci. & Technol. Harris, J., S., Eckstein, J., N., Schlom, D., G., Hellman, E., S., Dessonneck, K., E. von, Chen, Z., J. 1989; 2 (B7): 319-323
  • Elastic Scattering in Resonant Tunneling Devices With One Degree of Freedom J. of Superlattices and Microstructures Wolak, E., Shepard, K., Chou, S., Y., Harris Jr., J., S. 1989; 2 (5): 251-253
  • THE EFFECT OF STRAIN ON THE BAND-STRUCTURE OF GAAS AND IN0.2GA0.8AS Hwang, J., Shih, C. K., Pianetta, P., Kubiak, G. D., Stulen, R. H., Dawson, L. R., Pao, Y. C., Harris, J. S. A V S AMER INST PHYSICS. 1988: 1348–49
  • PROCESSING AND CHARACTERIZATION OF GAAS GROWN INTO RECESSED SILICON JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B ADKISSON, J. W., Kamins, T. I., Koch, S. M., Harris, J. S., Rosner, S. J., Reid, G. A., Nauka, K. 1988; 6 (2): 717-719
  • GROWTH OF GAAS AND ALGAAS ON MISORIENTED (110) GAAS BY MOLECULAR-BEAM EPITAXY Larkins, E. C., Pao, Y. C., Liu, D., Lin, M. J., Yoffe, G., Harris, J. S. AMER INST PHYSICS. 1988: 636–37
  • RESONANT TUNNELING OF ELECTRONS OF ONE OR 2-DEGREES OF FREEDOM APPLIED PHYSICS LETTERS Chou, S. Y., Wolak, E., Harris, J. S. 1988; 52 (8): 657-659
  • A LATERAL RESONANT TUNNELING FET SUPERLATTICES AND MICROSTRUCTURES Chou, S. Y., Wolak, E., Harris, J. S., Pease, R. F. 1988; 4 (2): 181-186
  • Limit Cycle Oscillations in Negative Differential Resistance Devices J. Appl. Phys. Hellman, E., S., Lear, K., L., Harris Jr., J., S. 1988; 5 (64): 2798-2800
  • Elastic Scattering Centers in Resonant Tunneling Diodes Appl. Phys. Lett. Harris, J., S., Wolak, E., Lear, K., L., Pitner, P., M., Hellman, E., S., Park, G., B. 1988; 3 (53): 201-203
  • Effect of Strain on the Band Structure of GaAs and In0.2Ga0.8As Appl. Phys. Lett. Harris, J., S., Hwang, J., Shih, C., K., Pianetta, P., Kubiak, G., D., Stulen, R., H. 1988; 4 (52): 308-310
  • Flux Ratio Dependence of Growth Rate, Interface Quality, and Impurity Incorporation in MBE Grown AlGaAs/GaAs Quantum Wells Köhrbrück, R., Munnix, S., Bimberg, D., Larkins, E., C., Harris Jr., J., S. 1988
  • A Lateral Resonant Tunneling Field-Effect Transistor Appl. Phys. Lett. Chou, S., Y., Harris Jr., J., S., Pease, R., F. W. 1988; 23 (52): 1982-1984
  • Molecular Beam Epitaxy and Deposition of High Tc Superconductors J. Vac. Sci. Technol. B Hellman, E., S., Schlom, D., G., Missert, N., Char, K., Harris Jr., J., S., Beasley, M., R. 1988; 2 (6): 799-803
  • (110)-Oriented GaAs MESFETs IEEE Elect. Dev. Lett. Pao, Y., C., Ou, W., Harris Jr., J., S. 1988; 3 (9): 119 - 123
  • Sodium Sulfide Treated (100) and Misoriented (110) GaAs Surfaces Harris, J., S., Liu, D., Larkins, E., C., Zhang, T., Chiang, T., T., LaRue, R., A. 1988
  • The Effect of Elastic Scattering Centers on the Current Voltage Characteristics of Double Barrier Resonant Tunneling Diodes Harris, J., S., Wolak, E., Lear, K., L., Pitner, P., M., Park, G., B., Hellman, E., S. 1988
  • Heteronucleation Onto Si Surfaces Harris, J., S., Hull, R., Bean, J., C., Chand, N., Leibenguth, R., E., Bahnck, D. 1988
  • Growth of GaAs on Si in Masked, Etched Trenches Adkisson, J., W., Kamins, T., I., Koch, S., M., Harris Jr., J., S., Rosner, S., J., Nauka, K. edited by Choi, H., K., Hull, R., Ishiwars, H. 1988
  • Influence of Buffer Layer Thickness on DC Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors Grown on Silicon Substrates IEEE Electron Device Lett. Ma, T., Ueda, D., Lee, W. S., Adkisson, J., Harris Jr., J., S. 1988; 12 (9): 657-659
  • Hot Electron Transport Parallel to Strong Magnetic Fields in Gallium Arsenide Solid State Electronics Hellman, E., S., Harris Jr., J., S. 1988; 31 (3/4): 785-788
  • Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFETs for Gate Lengths to 550 Å IEEE Electron Device Lett. de la Houssaye, P., R., Allee, D., R., Pao, Y., C., Schlom, D., G., Harris Jr., J., S., Pease, R., F. W. 1988; 3 (9): 148-150
  • Monolithic Integration of GaAs/AlAs Resonant Tunnel Diode Load and GaAs Enhancement-Mode MESFET Drivers for Tunnel Diode FET Logic Gates Lear, K., L., Yoh, K., Harris Jr., J., S. 1988
  • High Carrier Densities in GaAs/AlGaAs Modulation n-Doped Quantum Wells: From One- to Two-Component Plasma Munnix, S., Bimberg, D., Mars, D., E., Miller, J., N., Larkins, E., C., Harris Jr., J., S. 1988
  • Summary Abstract: MBE Growth of Tunable Multi-Layer Interference Optical Modulators J. Vac. Sci. Technol. B. Yoffe, W., Schlom, D., G., Harris Jr., J., S. 1988; 2 (6): 688
  • Molecular Beam Epitaxy of Layered Dy-Ba-Cu-O Compounds Appl. Phys. Lett. Schlom, D., G., Eckstein, J., N., Hellman, E., S., Streiffer, S., K., Harris Jr., J., S., Beasley, M., R. 1988; 17 (53): 1660-1662
  • Substrate Surface Structure and Nucleation Phenomena in Epitaxial Growth of GaAs on Vicinal Si (100) Substrates Hull, R., Koch, S., M., Harris Jr., J., S. 1988
  • Sub-100 nm Gate Length GaAs MESFETs and MODFETs Fabricated by a Combination of Molecular Beam Epitaxy and Electron Beam Lithography Allee, R., Houssaye, P., R. de la, Schlom, D., G., Harris Jr., J., S., Pease, R., F. W. 1988
  • Room-Temperature Observation of Resonant Tunneling Through a AlGaAs/GaAs Quasi-Parabolic Quantum Well Grown by MBE Appl. Phys. Lett. Chou, S., Y., Harris Jr., J., S. 1988; 17 (52): 1422-1424
  • Sulfur Incorporation in Undoped High Purity n-Type GaAs Grown by Molecular Beam Epitaxy Harris, J., S., Lee, B., Kim, M., H., Bose, S., S., Stillman, G., E., Larkins, E., C. 1988
  • Spatial Inhomogeneities of the Luminescence and Electrical Properties of MBE Grown GaAs on Si Reid, A., Nauka, K., Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1988
  • Picosecond Pulsing and Sampling by GaAs Photodetectors Fabricated on Silicon Substrates Harris, J., S., Morse, J., D., Pocha, M., D., Dutton, R., W., Anderson, G., D., Adkisson, J., W. 1988
  • Molecular Beam Epitaxy of Layered DY-BA-CU-O Compounds Schlom, D., G., Eckstein, J., N., Hellman, E., S., Webb, C., Turner, F., Harris Jr., J., S. 1988
  • GaAs/Si Nucleation and Buffer Layer Growth Koch, S., M., Hull, R., Rosner, S., J., Harris Jr., J., S. 1988
  • Characterization of AlGaAs and GaAs Materials and Interfaces Grown on Misoriented (110) GaAs by MBE Larkins, E., C., Liu, D., Pao, Y., C., Lin, M., J., Yoffe, G., W., Harris Jr., J., S. 1988
  • Summary Abstract: Growth of GaAs and AlGaAs on misoriented (110) GaAs by Molecular Beam Epitaxy J. Vac. Sci. Technol. B Larkins, E., C., Pao, Y., C., Liu, D., Lin, J., Yoffe, G., Harris Jr., J., S. 1988; 2 (6): 636-637
  • Deep Level Transient Spectroscopy Study of GaAs Surface States Treated With Inorganic Sulfides Appl. Phys. Lett. Liu, D., Zhang, T., LaRue, R., A., Harris Jr., J., S., Sigmon, T., W. 1988; 12 (53): 1059-1061
  • Characterization of Al0.25Ga0.75As Grown by Molecular Beam Epitaxy J. Vac. Sci. Technol. B Harris, J., S., Lin, M., J., Larkins, E., C., Pao, Y., C., Liub, D., Yoffe, G. 1988; 2 (6): 631-635
  • RELATIONSHIPS BETWEEN SUBSTRATE CLEANING, SURFACE-STRUCTURE, AND HETERONUCLEATION IN EPITAXIAL-GROWTH OF GAAS ON SI(100) Hull, R., Koch, S. M., Rosner, S. J., Harris, J. S. ELECTROCHEMICAL SOC INC. 1987: C545–C545
  • STRUCTURAL-CHANGES OCCURRING DURING THE INITIAL MBE GROWTH-STAGES OF GAAS/SI(100) Koch, S. M., Rosner, S. J., Hull, R., Harris, J. S. MINERALS METALS MATERIALS SOC. 1987: A26–A27
  • OBSERVATION OF STARK SHIFTS IN QUANTUM-WELL INTERSUBBAND TRANSITIONS APPLIED PHYSICS LETTERS Harwit, A., Harris, J. S. 1987; 50 (11): 685-687
  • INFRARED TRANSMISSION SPECTROSCOPY OF GAAS DURING MOLECULAR-BEAM EPITAXY JOURNAL OF CRYSTAL GROWTH Hellman, E. S., Harris, J. S. 1987; 81 (1-4): 38-42
  • THE GROWTH OF GAAS ON SI BY MBE JOURNAL OF CRYSTAL GROWTH Koch, S. M., Rosner, S. J., Hull, R., Yoffe, G. W., Harris, J. S. 1987; 81 (1-4): 205-213
  • POLYNOMIAL KINETIC-ENERGY APPROXIMATION FOR DIRECT-INDIRECT HETEROSTRUCTURES SUPERLATTICES AND MICROSTRUCTURES Hellman, E. S., Harris, J. S. 1987; 3 (2): 167-169
  • Complementary MODFET Circuits Consisting of Pseudomorphic N-MODFET and Double Heterojunction P-MODFET by MBE, IEDM Washington, DC Yoh, K., Harris Jr., J., S. 1987: 892
  • Modulation of Light by Electrically Tunable Multi-Layer Interference Filter Appl. Phys. Lett. Yoffe, G., W., Schlom, D., G., Harris Jr., J., S. 1987; 23 (51): 1876-1878
  • Determination of the Natural Valence-Band Offset in InxGa1-xAs System Appl. Phys. Lett. Hwang, J., Pianetta, P., Shih, C., K., Spicer, W., E., Pao, Y., C., Harris Jr., J., S. 1987; 20 (51): 1632 - 1634
  • The Nucleation and Growth of GaAs on Si Harris Jr., J., S., Koch, S., M., Rosner, S., J. 1987
  • Nucleation of GaAs on Vicinal Si(100) Surfaces Hull, R., Fischer-Colbrie, A., Koch, S., M., Harris Jr., J., S. 1987
  • Relationship Between Substrate Cleaning, Surface Structure and Nucleation Phenomena in Heteroepitaxial Growth on Si extended Abstracts of Electrochemical, Materials Research Society Meeting, Honolulu, Hawaii Hull, R., Bean, J., C., Leibenguth, R., Koch, S., M., Harris Jr., J., S. 1987
  • Device and material characterization of molecular-beam epitaxial (110) GaAa/AlGaAs J. Electron. Mat. Pao, Y., C., Gabrial, N., Liu, D., Harris Jr., J., S., Parechanian, L., Webber, E., R. 1987; 4 (16): A16
  • A p-Channel Strained Quantum Well Modulation Doped Field Effect Transistor Extended Abstracts of the Japan Society of Applied Physics Meeting, Tokyo Yoh, K., Harris Jr., J., S. 1987; 804.83
  • Sub-100 nm Gate Length GaAs MESFETs Fabricated by Molecular Beam Epitaxy and Electron Beam Lithography Allee, D., R., Houssaye, P., R. de la, Schlom, D., G., Langley, B., W., Harris Jr., J., S., Pease, R., F. W. 1987
  • Deep Electron Traps in MBE GaAs on Si Nauka, K., Reid, G., A., Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1987
  • Growth of High Tc Superconducting Thin Films using Molecular Beam Epitaxy Techniques Appl. Phys. Lett. Harris, J., S., Webb, C., Weng, S., L., Eckstein, J., N., Missert, N., Char, K. 1987; 15 (51): 1191
  • Comment on Observation of a Negative Differential Resistance due to Tunneling through a Single Barrier into a Quantum Well Appl. Phys. Lett. Wolak, E., Harwit, A., Harris Jr., J., S. 1987; 22 (50)
  • The Influence of Substrates on Implanted Layer Characteristics Johannessen, J., S., Harris Jr., J., S., Rensch, D., B., Winston, H., V., Hunter, A., T., Kocot, C. 1987
  • Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1987
  • Infra-Red Transmission Spectroscopy of GaAs during Molecular Beam Epitaxy J. Cryst. Growth Hellman, E., S., Harris Jr., J., S. 1987; 81: 38-42
  • GaAs with Very Low Acceptor Impurity Background Grown by Molecular Beam Epitaxy J. Cryst. Growth Larkins, E., C., Hellman, E., S., Schlom, D., G., Harris Jr., J., S., Kim, M., H., Stillman, G., E. 1987; 81: 344-348
  • POLARON TRANSPORT IN QUASI-ONE-DIMENSIONAL SEMICONDUCTOR HETEROSTRUCTURES SURFACE SCIENCE Hellman, E. S., Harris, J. S. 1986; 174 (1-3): 459-465
  • ENERGY-MOMENTUM RELATION FOR POLARONS CONFINED TO ONE DIMENSION PHYSICAL REVIEW B Hellman, E. S., Harris, J. S. 1986; 33 (12): 8284-8290
  • Calculated Quasi-Eigenenstates and Quasi-Eigenenergies of Quantum Well Superlattices in an Applied Field J. Appl. Phys. Harwit, A., Harris Jr., J., S., Kapitulnik, A. 1986; 9 (60): 3211-13
  • Microstructure of Thin Layers of MBE-Grown GaAs on Si Substrates Rosner, S., J., Koch, S., M., Laderman, S., Harris Jr., J., S. edited by Fan, J., C. C., Poate, J., M. 1986
  • Stanford University: Stanford Electronics Laboratory and Microwave Ginzton Laboratory Forthieth Anniversary of the Joint Services Electronics Program Harris, S., E., Harris Jr., J., S. edited by Shostak, A. ANSER, Arlington, VA. 1986
  • Surface Effect-Induced Fast Be Diffusion in Heavily Doped GaAs Grown by Molecular Beam Epitaxy J. Appl. Phys. Harris, J., S., Pao, Y., C., Hierl, T., Cooper, T. 1986; 1 (60): 201-204
  • Reduction of the Acceptor Impurity Background in GaAs Grown by Molecular Beam Epitaxy Appl. Phys. Lett. Larkins, E., C., Hellman, E., S., Schlom, D., G., Harris Jr., J., S., Kim, M., H., Stillman, G., E. 1986; 7 (49): 391-3
  • Mechanism of Current Modulation by Optic Phonons in Heterojunction Tunneling Experiments Phys. Rev. B Harris, J., S., Hanna, C., B., Hellman, E., S., Laughlin, R., B. 1986; 8 (34): 5475-83
  • Atomic Structure of the GaAs/Si Interface Appl. Phys. Lett. Hull, R., Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1986; 25 (49): 1714-16
  • Material Effects on the Cracking Efficiency of Molecular Beam Epitaxy Arsenic Cracking Furnaces J. Vac. Sci. Technol. Lee, R., L., Schaffer, W., J., Chai, Y., G., Liu, D., Harris Jr., J., S. 1986; 2 (B4): 568-70
  • Effect of Hydrogen on Undoped and Lightly Si-Doped Molecular Beam Epitaxial GaAs Layers Appl. Phys. Lett. Pao, Y., C., Liu, D., Lee, W., S., Harris Jr., J., S. 1986; 19 (48): 1291-3
  • Nucleation and Initial Growth of GaAs on Si Substrate Appl. Phys. Lett. Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1986; 26 (49): 1764-66
  • Molecular Beam Epitaxy of Gallium Arsenide using Direct Radiative Substrate Heating J. Vac. Sci. Technol. Hellman, E., S., Pitner, P., M., Harwit, A., Liu, D., Yoffe, G., W., Harris Jr., J., S. 1986; 2 (B4): 574-7
  • The Growth of GaAs on Si by Molecular Beam Epitaxy Koch, S., M., Rosner, S., J., Schlom, D., G., Harris Jr., J., S. edited by Fan, J., C. C., Poate, J., M. 1986
  • One Dimensional Polaron Effects and Current Inhomogeneities in Sequential Phonon Emission Physica Hellman, E., S., Harris Jr., J., S., Hanna, C., B., Laughlin, R., B. 1985; 134B: 41-46
  • Heterojunction Bipolar Transistors J. J. Appl. Phys Harris Jr., J., S., Miller, D., L., Asbeck, P., M. 1982; 22: 379
  • GaAs/AlGaAs Tunnel Junctions for Multiple Bandgap Solar Cells J. Appl. Phys. Miller, D., L., Zehr, S., W., Harris Jr., J., S. 1982; 53: 744
  • Heterojunction Bipolar Transistors Harris Jr., J., S., Miller, D., L., Asbeck, P., M. 1982
  • An MBE AlGaAs/GaAs Heterojunction Bipolar Transistor Miller, D., L., Harris Jr., J., S., Asbeck, P., M. edited by Sugano, T. 1981
  • (Ga,Al)As/GaAs Bipolar Transistors for Digital Integrated Circuits Asbeck, P., M., Miller, D., L., Milano, R., A., Harris Jr., J., S., Kaelin, G., R., Zucca, R. 1981
  • High Performance AlGaAs/GaAs Heterojunction CCDs for Imaging Applications Adv. Astronomical Sciences Harris Jr., J., S., Reitz, L., R. 1981; 45: 197
  • High Performance AlGaAs/GaAs Heterojunction CCDs for Imaging Applications Harris Jr., J., S., Reitz, L., R. 1981
  • Measurement of Isotype Heterojunction Barriers by C-V Profiling Appl. Phys. Lett. Kroemer, H., Chien, W., Yi, Harris Jr., J., S., Edwall, D., D. 1980; 36: 295
  • Low Bandgap (0.7 to 1.1 eV) Solar Cells in the GaAlAsSb/GaSb System Liu, Y., Z., Yang, H., T., Harris Jr., J., S. 1980
  • MBE GaAs Heteroface Solar Cells Grown on Ge Appl. Phys. Lett. Miller, D., L., Harris Jr., J., S. 1980; 37: 1104
  • A Backside-Illuminated Imaging AlGaAs/GaAs Charge Coupled Device Appl. Phys. Lett. Liu, Y., Z., Deyhimy, I., Anderson, R., J., Milano, R., A., Cohen, M., J., Harris Jr., J., S. 1980; 37: 803
  • Solar Cell Characterization at Rockwell International Cohen, M., J., Cape, J., A., Paul, M., D., Miller, D., L., Harris Jr., J., S. 1980
  • Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications Cape, J., A., Harris Jr., J., S., Wiczer, J. 1980
  • A Non-Lattice Matched Monolithic Multicolor Solar Cell Harris, J., S., Zehr, S., W., Yang, H., T., Yang, J., J. J., Coleman, J., J., Miller, D., L. 1980
  • Schottky Barrier Formation in Polycrystal GaAs J. Vac. Sci. Technol. Cohen, M., J., Paul, M., D., Miller, D., L., Waldrop, J., R., Harris Jr., J., S. 1980; 17: 899
  • GaAs and Related Heterojunction Charge Coupled Devices IEEE Trans. Electron Dev. Deyhimy, I., Eden, R., C., Harris Jr., J., S. 1980; ED-27: 1172
  • Barrier Height Enhancement in Heterojunction Schottky Barrier Solar Cells IEEE Trans. Electron Dev Yang, H., T., Shen, Y., D., Edwall, D., D., Miller, D., L., Harris Jr., J., S. 1980; ED-27: 851
  • Monolithic Multicolor Solar Conversion Harris, J., S., Zehr, S., W., Yang, H., T., Coleman, J., J., Miller, D., L., Yang, J., J. J. 1980
  • Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications Wiczer, J., J., Cape, J., A., Harris Jr., J., S. 1980
  • Heterojunction Schottky Barrier Solar Cells Yang, H., T., Miller, D., L., Shen, Y., D., Edwall, D., D., Harris Jr., J., S. 1980
  • Observation of Charge Storage and Charge Transfer in a GaAlAsSb/GaSb CCD Appl. Phys. Lett Liu, Y., Z., Deyhimy, I., Harris Jr., J., S., Anderson, R., J., Appelbaum, J. 1980; 36: 458
  • A 500 MHz GaAs Charge Coupled Device Appl. Phys. Lett. Deyhimy, I., Eden, R., C., Edwall, D., D., Anderson, R., J., Harris Jr., J., S. 1980; 36: 151
  • Performance Losses in High Efficiency Monolithic Multijunction Solar Cells Zehr, S., W., Cape, J., A., Harris Jr., J., S. 1980
  • Charge Coupled Devices in Gallium Arsenide Deyhimy, I., Anderson, R., J., Eden, R., C., Harris Jr., J., S. 1980
  • Analog Signal Processing Complement to GaAs Digital ICs Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979
  • Reduced Geometry GaAs CCD for High Speed Signal Processing J. J. Appl. Phys Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979; 19: 269
  • Minimum Al0.5Ga0.5As-GaAs Heterojunction Width Determined by Sputter-Auger Technique Appl. Phys. Lett Garner, C., M., Su, C., Y., Spicer, W., E., Edwood, P., D., Miller, D., Harris, J., S. 1979; 34: 610
  • High Efficiency AlGaAs/GaAs Concentrator Solar Cells Appl. Phys. Lett. Sahai, R., Edwall, D., D., Harris, J., S. 1979; 34: 147
  • Reduced Geometry GaAs CCD for High Speed Signal Processing Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979
  • Intercell Ohmic Contacts for High Efficiency Multijunction Solar Converters Stanley, W., Zehr, Miller, D., L., Harris Jr., J., S. 1979
  • 20 KW Gallium Arsenide Photovoltaic Dense Array for Central Receiver Concentrator Applications Cape, J., A., Sahai, R., Harris, J., S. 1979
  • Application of GaAs CCD's to High Speed Signal Processing Deyhimy, I., Harris Jr., J., S., Eden, R., C. 1979
  • An Ultra High Speed GaAs CCD Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J., Edwall, D., D. 1979
  • 259 Gate GaAs CCD Shift Register for High Speed Applications Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979
  • Interface Studies of Al Gal As-GaAs Heterojunctions J. Appl. Phys. Harris, J., S., Garner, C., M., Su, C., Y., Shen, Y., D., Lee, C., S., Pearson, G., L. 1979; 50: 3383
  • GaAlAs/GaAs Heterojunction Schottky Barrier Gate CCD Liu, Y., Z., Deyhimy, I., Anderson, R., J., Harris Jr., J., S., Tomasetta, L., R. 1979
  • Development of Stacked Multiple Bandgap Solar Cells Harris, J., S., Ruth, R., P., Zehr, S., W., Coleman, J., J., Dupuis, R., D., Yang, H., T. 1979
  • CCD's in GaAs and Related III-V Compounds Deyhimy, I., Harris, J., S., Edwall, D., D. edited by Wolfe, C., M. 1978
  • 1.0-1.4µm High-Speed Avalanche Photodiodes Appl. Phys. Lett Law, H., D., Tomasetta, L., R., Nakano, K., Harris, J., S. 1978; 33: 416
  • High Efficiency AlGaAs/GaAs Concentrator Solar Cell Development Sahai, R., Edwall, D., D., Harris, J., S. 1978
  • Carrier Transport at Grain Boundaries in Polycrystalline GaAs Cohen, M., J., Harris, J., S., Waldrop, J., R. 1978
  • Ionization Coefficients of Ga0.72Al0.28Sb Avalanche Photodetectors Appl. Phys. Lett Law, H., D., Nakano, K., Tomasetta, L., R., Harris, J., S. 1978; 33: 948
  • GaAs Charge Coupled Devices Appl. Phys. Lett Deyhimy, I., Harris, J., S., Eden, R., C., Edwall, D., D., Anderson, S., J., Bubulac, L., O. 1978; 32: 383
  • High Speed GaAs CCD Deyhimy, I., Harris, J., S., Eden, R., C., Edwall, D., D., Anderson, R., J. 1978
  • (SN)x-GaAs Polymer Semiconductor Solar Cells Appl. Phys. Lett Cohen, M., J., Harris, J., S. 1978; 33: 812
  • GaAs CCD with High Transfer Efficiency Deyhimy, I., Harris, J., S., Eden, R., C. 1978
  • Spectrally Split Tandem Cell Converter Studies Cape, J., A., Harris, J., S., Sahai, R. 1978
  • GaAlAsSb/ GaSb Alloys: Material Preparation and Applications to Optoelectronic Devices Law, H., D., Harris, J., S., Wong, K., C., Tomasetta, L., R. edited by Wolfe, C., M. 1978
  • A Solar Power System with Gallium Arsenide Solar Cells Madewell, J., F., Nussberger, A., A., Harris, J., S. 1977
  • Growth and Evaluation of LPE Graded Composition Al Gal As Layers for High Efficiency Graded Bandgap Solar Cells J. Electronic Materials Sahai, R., Harris, J., S., Edwall, D., D., Eisen, F., H. 1977; 6: 645
  • Gallium Arsenide Concentrator System Miller, R., S., Harris, J., S. 1977
  • Auger Depth Profiling of Au-AlxGa1-xAs Interfaces and LPE AlxGa1-x-GaAs Heterojunctions J. Vac. Sci. Technol Garner, C., M., Shen, Y., D., Kim, J., S., Pearson, G., L., Spicer, W., E., Harris, J., S. 1977; 14: 985
  • Auger Profiling of 'Abrupt' LPE Al Gal -xAs/GaAs Heterojunctions J. Appl. Phys Garner, C., M., Shen, Y., D., Kim, J., S., Pearson, G., L., Spicer, W., E., Harris, J., S. 1977; 48: 3147
  • AlGaSb Alloys for 1.0µm to 1.8µm Heterojunction Devices Anderson, S., H., Scholl, F., Harris, J., S. edited by Eastman, L., F. 1977
  • High Efficiency Thin Window Ga1-xAlx As/GaAs Solar Cells Sahai, R., Edwall, D., D., Cory, E., Harris, J., S. 1976
  • Non-destructive Determination of Energy Gap Grading in Thin Films by Optical Transmission Measurements J. Vac. Sci. Technol Hall, W., F., Tennant, W., E., Cape, J., A., Harris, J., S. 1975; 13: 914
  • The Phase Diagram and its Application to the Liquid Phase Epitaxial Growth of Pb1-xSnxTe J. of Crystal Growth Harris, J., S., Longo, J., T., Gertner, E., R., Clarke, J., E. 1975; 28: 334
  • Potential Profiling Across Semiconductor Junctions by Auger Electron Spectroscopy in the Scanning Electron Microscope J. Appl. Phys Waldrop, J., R., Harris, J., S. 1975; 46: 5214
  • Double Heterojunction Photocathode Devices CRC Crit. Rev. Sol. State Sci Sahai, R., Harris, J., S., Eden, R., C., Bubulac, L., O., Chu, J., C. 1975; 5: 565
  • High Efficiency Graded Bandgap n/p AlxGa1-xAs Solar Cells Hutchby, J., A., Sahai, R., Harris, J., S. 1975
  • The Influence of Radiation Damage on Ion Implantation Harris, J., S., Eisen, F., H. 1974
  • Properties of Tellurium Implanted Gallium Arsenide Ion Implantation in Semiconductors and Other Materials Eisen, F., H., Harris, J., S., Welch, B., Pashley, R., D., Sigurd, D., Mayer, J., W. edited by Crowder, B., L. Plenum, New York. 1973: 631
  • Material Properties of Solution Grown Pb1-x SnxTe J. Nonmetals Longo, J., T., Gertner, E., R., Harris, J., S. 1973; 1: 321
  • Properties of Tellurium Implanted GaAs Eisen, F., H., Harris, J., S., Welch, B., Pashley, R., D., Sigurd, D., Mayer, J., W. 1972
  • Fluorine Ion Implantation Profiles in Gallium Arsenide as Determined by Auger Electron Spectroscopy Appl. Phys. Lett Harris, J., S., Harris, J., M., Marcus, H., L. 1972; 21: 598
  • Influence of Implantation Temperature and Surface Protection on Tellurium Implantation in GaAs Appl. Phys. Lett Harris, J., S., Eisen, F., H., Welch, B., Haskell, J., D., Pashley, R., D., Mayer, J., W. 1972; 21: 601
  • Material Properties of Solution Grown Pb1-x SnxTe Longo, J., T., Gertner, E., R., Harris, J., S. 1972
  • Improved Surface Properties of Solution Grown GaAs and Pb1-xSnxTe Epitaxial Layers: A New Technique J. Crystal Growth Longo, J., T., Harris, J., S., Gertner, E., R., Chu, J., C. 1972; 15: 107
  • The Effects of Dose Rate and Implantation Temperature on Lattice Damage and Electrical Activity in Ion Implanted GaAs Harris, J., S. edited by I., J. 1971
  • The Effects of Uniaxial Stress on the Electrical Resistivity and the Gunn Effect in n-Type GaAs Phys. Rev.B Harris, J., S., Moll, J., L., Pearson, G., L. 1970; 1: 1660
  • The Annealing of Damage in Ion Implanted Gallium Arsenide Radiation Effects Harris, J., S., Eisen, F. 1970; 7: 123
  • Homogeneous Solution Grown Epitaxial GaAs by Tin Doping Solid State Electron Harris, J., S., Snyder, W., L. 1969; 12: 337
  • Ohmic Contacts to Solution Grown Gallium Arsenide J. Appl. Phys Harris, J., S., Nannichi, Y., Pearson, G., L. 1969; 40: 4575
  • The Effects of Uniaxial Stress on the Electrical Resistivity of n-Type Boat Grown and Liquid Epitaxial GaAs IEEE Trans. Elect Dev Harris, J., S., Snyder, W., L., Moll, J., L., Pearson, G., L. 1968; ED-14: 690