Bio


Harris utilizes molecular beam epitaxy (MBE) of III-V compound semiconductor materials to investigate new materials for electronic and optoelectronic devices. He utilizes heterojunctions, superlattices, quantum wells, and three-dimensional self-assembled quantum dots to create metastable engineered materials with novel or improved properties for electronic and optoelectronic devices. He has recently focused on integration of photonic devices and micro optics for creation of new minimally invasive bio and medical systems for micro-array and neural imaging.

Honors & Awards


  • Aristotle Award, Semiconductor Research Corporation (2013)
  • Elected Member, National Academy of Engineering (2011)
  • MBE Innovator Award, International MBE Conference (2008)
  • Alexander Humboldt Senior Research Prize, Alexander Humboldt (1999)
  • Welker Medal, International Symposium on Compound Semiconductors (2000)
  • Morris Liebmann Award, IEEE (2000)
  • Fellow, Materials Research Society (2009)
  • Fellow, Optical Society of America (2005)
  • Fellow, American Physical Society (1992)
  • Fellow, IEEE (1988)

Professional Education


  • PhD, Stanford University, Electrical Engineering (1969)
  • MS, Stanford University, Electrical Engineering (1965)
  • BS, Stanford University, Electrical Engineering (1964)

2014-15 Courses


All Publications


  • Influence of Ballastic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes Superlattices and Microstructures Harris, J., S., Rascol, J., J. L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. ; 2 (7): 147-150
  • How Adding Electrons Scrambles the Electronic Spectrum of a Quantum Dot Harris, J., S., Patel, S., R., Stewart, D., R., Marcus, C., M., Gökcedag, M., Alhassid, Y.
  • A Solar Power System with Gallium Arsenide Solar Cells J. Energy Madewell, J., F., Nussberger, A., A., Harris, J., S.
  • Simulation and fabrication of a new novel 3D injectable biosensor for high throughput genomics and proteomics in a lab-on-a-chip device. Nanotechnology Esfandyarpour, R., Esfandyarpour, H., Harris, J. S., Davis, R. W. 2013; 24 (46): 465301-?

    Abstract

    Biosensors are used for the detection of biochemical molecules such as proteins and nucleic acids. Traditional techniques, such as enzyme-linked immuno-sorbent assay (ELISA), are sensitive but require several hours to yield a result and usually require the attachment of a fluorophore molecule to the target molecule. Micromachined biosensors that employ electrical detection are now being developed. Here we describe one such device, which is ultrasensitive, real-time, label free and localized. It is called the nanoneedle biosensor and shows promise to overcome some of the current limitations of biosensors. The key element of this device is a 10 nm wide annular gap at the end of the needle, which is the sensitive part of the sensor. The total diameter of the sensor is about 100 nm. Any change in the population of molecules in this gap results in a change of impedance across the gap. Single molecule detection should be possible because the sensory part of the sensor is in the range of bio-molecules of interest. To increase throughput we can flow the solution containing the target molecules over an array of such structures, each with its own integrated read-out circuitry to allow 'real-time' detection (i.e. several minutes) of label free molecules without sacrificing sensitivity. To fabricate the arrays we used electron beam lithography together with associated pattern transfer techniques. Preliminary measurements on individual needle structures in water are consistent with the design. Since the proposed sensor has a rigid nano-structure, this technology, once fully developed, could ultimately be used to directly monitor protein quantities within a single living cell, an application that would have significant utility for drug screening and studying various intracellular signaling pathways.

    View details for DOI 10.1088/0957-4484/24/46/465301

    View details for PubMedID 24149048

  • Ultra-Compact and Low-Loss Polarization Rotator Based on Asymmetric Hybrid Plasmonic Waveguide IEEE PHOTONICS TECHNOLOGY LETTERS Gao, L., Huo, Y., Harris, J. S., Zhou, Z. 2013; 25 (21): 2081-2084
  • Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Dutt, B., Lin, H., Sukhdeo, D. S., Vulovic, B. M., Gupta, S., Nam, D., Saraswat, K. C., Harris, J. S. 2013; 19 (5)
  • Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor BIOMEDICAL OPTICS EXPRESS O'Sullivan, T. D., Heitz, R. T., Parashurama, N., Barkin, D. B., Wooley, B. A., Gambhir, S. S., Harris, J. S., Levi, O. 2013; 4 (8): 1332-1341
  • Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1-xSnx): A Novel Route for Ge1-xSnx Nanostructure Fabrication NANO LETTERS Gupta, S., Chen, R., Huang, Y., Kim, Y., Sanchez, E., Harris, J. S., Saraswat, K. C. 2013; 13 (8): 3783-3790

    Abstract

    We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge1-xSnx). We address the challenges in synthesis of high-quality, defect-free Ge1-xSnx thin films by using Ge virtual substrates as a template for Ge1-xSnx epitaxy. The etch process is applied to selectively remove the stress-inducing Ge virtual substrate and achieve strain-free, direct band gap Ge0.92Sn0.08. The semiconductor processing technology presented in this work provides a robust method for fabrication of innovative Ge1-xSnx nanostructures whose realization can prove to be challenging, if not impossible, otherwise.

    View details for DOI 10.1021/nl4017286

    View details for Web of Science ID 000323241000053

    View details for PubMedID 23834495

  • Label-free electronic probing of nucleic acids and proteins at the nanoscale using the nanoneedle biosensor BIOMICROFLUIDICS Esfandyarpour, R., Javanmard, M., Koochak, Z., Esfandyarpour, H., Harris, J. S., Davis, R. W. 2013; 7 (4)

    View details for DOI 10.1063/1.4817771

    View details for Web of Science ID 000323907600016

  • Two-step growth of high quality Bi2Te3 thin films on Al2O3 (0001) by molecular beam epitaxy APPLIED PHYSICS LETTERS Harrison, S. E., Li, S., Huo, Y., Zhou, B., Chen, Y. L., Harris, J. S. 2013; 102 (17)

    View details for DOI 10.1063/1.4803717

    View details for Web of Science ID 000318553000022

  • Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers PHYSICAL REVIEW LETTERS Pavarelli, N., Ochalski, T. J., Murphy-Armando, F., Huo, Y., Schmidt, M., Huyet, G., Harris, J. S. 2013; 110 (17)

    Abstract

    We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the electronegativity of the layer in contact with Ge, leading to different types of optical transitions in the heterostructure. When group-V atoms compose the interfaces, only electrons are confined in Ge, whereas both carriers are confined when the interface consists of group-III atoms. The different carrier confinement results in different emission dynamics behavior. This study provides a solution to obtain efficient light emission from Ge.

    View details for DOI 10.1103/PhysRevLett.110.177404

    View details for Web of Science ID 000318188100016

    View details for PubMedID 23679775

  • Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing JOURNAL OF CRYSTAL GROWTH Chen, R., Huang, Y., Gupta, S., Lin, A. C., Sanchez, E., Kim, Y., Saraswat, K. C., Kamins, T. I., Harris, J. S. 2013; 365: 29-34
  • Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well JOURNAL OF PHYSICS-CONDENSED MATTER Baranowski, M., Kudrawiec, R., Latkowska, M., Syperek, M., Misiewicz, J., Sarmiento, T., Harris, J. S. 2013; 25 (6)

    Abstract

    In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ~700 °C and ~760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ~720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.

    View details for DOI 10.1088/0953-8984/25/6/065801

    View details for Web of Science ID 000313950600015

    View details for PubMedID 23306016

  • Microneedle biosensor: A method for direct label-free real time protein detection SENSORS AND ACTUATORS B-CHEMICAL Esfandyarpour, R., Esfandyarpour, H., Javanmard, M., Harris, J. S., Davis, R. W. 2013; 177: 848-855

    Abstract

    Here we present the development of an array of electrical micro-biosensors in a microfluidic channel, called microneedle biosensors. A microneedle biosensor is a real-time, label-free, direct electrical detection platform, which is capable of high sensitivity detection, measuring the change in ionic current and impedance modulation, due to the presence or reaction of biomolecules such as proteins and nucleic acids. In this study, we successfully fabricated and electrically characterized the sensors and demonstrated successful detection of target protein. In this study, we used biotinylated bovine serum albumin as the receptor and streptavidin as the target analyte.

    View details for DOI 10.1016/j.snb.2012.11.064

    View details for Web of Science ID 000315751000113

    View details for PubMedID 23355762

  • Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH Lin, A. C., Fejer, M. M., Harris, J. S. 2013; 363: 258-263
  • Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon OPTICS EXPRESS Edwards, E. H., Lever, L., Fei, E. T., Kamins, T. I., Ikonic, Z., Harris, J. S., Kelsall, R. W., Miller, D. A. 2013; 21 (1): 867-876

    Abstract

    We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.

    View details for DOI 10.1364/OE.21.000867

    View details for Web of Science ID 000315988100111

  • Photon-enhanced thermionic emission from heterostructures with low interface recombination. Nature communications Schwede, J. W., Sarmiento, T., NARASIMHAN, V. K., Rosenthal, S. J., Riley, D. C., Schmitt, F., Bargatin, I., Sahasrabuddhe, K., Howe, R. T., Harris, J. S., Melosh, N. A., Shen, Z. 2013; 4: 1576-?

    Abstract

    Photon-enhanced thermionic emission is a method of solar-energy conversion that promises to combine photon and thermal processes into a single mechanism, overcoming fundamental limits on the efficiency of photovoltaic cells. Photon-enhanced thermionic emission relies on vacuum emission of photoexcited electrons that are in thermal equilibrium with a semiconductor lattice, avoiding challenging non-equilibrium requirements and exotic material properties. However, although previous work demonstrated the photon-enhanced thermionic emission effect, efficiency has until now remained very low. Here we describe electron-emission measurements on a GaAs/AlGaAs heterostructure that introduces an internal interface, decoupling the basic physics of photon-enhanced thermionic emission from the vacuum emission process. Quantum efficiencies are dramatically higher than in previous experiments because of low interface recombination and are projected to increase another order of magnitude with more stable, low work-function coatings. The results highlight the effectiveness of the photon-enhanced thermionic emission process and demonstrate that efficient photon-enhanced thermionic emission is achievable, a key step towards realistic photon-enhanced thermionic emission based energy conversion.

    View details for DOI 10.1038/ncomms2577

    View details for PubMedID 23481384

  • Single-Cell Photonic Nanocavity Probes NANO Lett. Shambat, G., Kothapalli, S., R., Provine, J., Sarmiento, T., Harris, J., Gambhir, S., Sam 2013
  • Magnetic properties of gadolinium substituted Bi2Te3 thin films Appl. Phys. Lett. Harris, J., S., Li, S., Harrison, S., E., Huo, Y., Pushp, A., Yuan, H., T. 2013; 24 (102): 242412
  • Design of High-Power Low-Noise 2-D Distributed Feedback Laser Paik, S., Cho, S., Leedle, K., Kim, H., Park, B., G., Harris, J., S. 2013
  • Silicon germanium waveguide for stronger optical confinement in integrated silicon photonics Photonics Nanostruct. Fundam. Appl. Cho, S., Park, J., Kim, H., Sinclair, R., Park, B., G., Harris Jr., J., S. 2013

    View details for DOI 10.1016/j.photonics.

  • Optical and Electronic Devices for Monolithically Integrated Photonics Circuits Cho, S., Kim, H., Park, B., G., Harris Jr., James, S. 2013
  • Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling high-quality Ge (Sn) materials for micro and nanophotonics Nano Lett. Harris, J., S., Chen, R., Gupta, S., Huang, Y., C., Huo, Y., Rudy, C., W in press. 2013
  • Si/Ge/AlGaAs heterojunction high hole mobility transistor Cho, S., Kim, H., Park, B., G., Harris Jr., James, S. 2013
  • Low-Standby Power and High-Performance InAs/InGaAs/InP heterojunction Tunneling Field-Effect Transistor Harris, J., S., Cho, S., Woo, S., Yun, Kim, H., Seo, J. H., Lee, H., Gi 2013
  • Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy J. Appl. Phys. Harris, J., S., Lastras-Martınez, L., F., Herrera-Jasso, R., Ulloa-Castillo, N., A., Balderas-Navarro, R., E., Lastras-Martınez, A. 2013; 114: 173504
  • Germanium Waveguide for On-Chip Optical Interconnect Harris, J., S., Cho, S., Kim, H., Paik, S., Kang, I. M., Lee, J., H. 2013
  • Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application Harris, J., S., Yoon, Y., Jun, Cho, S., Seo, J., Hwa, Cho, E., S., Kang, S., W. 2013
  • Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application Appl. Phys. Lett. Cho, S., Kang, I. M., Kim, K., Rok, Park, B., G., Harris Jr., J., S. 2013; 22 (103): 222102-1 – 222102-4
  • Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications IEEE J. Electron Devices Soc. Cho, S., Kim, H., Sun, M., C., Kang, I. M., Park, B., G., Harris Jr., J., S. 2013; 2 (1): 48-53
  • MBE growth of tensile-strained Ge quantum wells and quantum dots Frontiers of Optoelectronics Huo, Y., Lin, H., Chen, R., Rong, Y., Kamins, T., I., Harris, J., S. 2013
  • (Invited) GeSn Channel n and p MOSFETs ECS Trans. Gupta, S., Chen, R., Vincent, B., Lin, D., Magyari-Kope, B., Caymax, M. 2013; 50: 937-941
  • In Vitro Optical Fiber Biosensor for Integrated Optical System Cho, S., Kallassi, P., El, Kim, H., Park, B., G., Harris Jr., J., S. 2013
  • Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics Harris, J., S., Lin, J. J., Gupta, S., Huang, Y., C., Kim, Y., Jin, M. 2013
  • High-Efficiency Nanostructured Window GaAs Solar Cells Nano Letters Liang, D., Kang, Y., Huo, Y., Chen, Y., Cui, Y., Harris, J., S. 2013; 10 (13): 4850-4856
  • In-vivo Performance of Photovoltaic Subretinal Prosthesis OPHTHALMIC TECHNOLOGIES XXIII Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Manivanh, R., Harris, J., Palanker, D. 2013; 8567

    View details for DOI 10.1117/12.2001750

    View details for Web of Science ID 000325430800005

  • Design optimization of an optically drivable heterogeneous MOSFET with silicon compatibility PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXI Cho, S., Kim, H., Yoo, S. J., Park, B., Harris, J. S. 2013; 8619

    View details for DOI 10.1117/12.2005813

    View details for Web of Science ID 000325433900042

  • Approaches for a Viable Germanium Laser: Tensile Strain, GeSn Alloys, and n-Type Doping 2013 IEEE OPTICAL INTERCONNECTS CONFERENCE Sukhdeo, D. S., Lin, H., Nam, D., Yuan, Z., Vulovic, B. M., Gupta, S., Harris, J. S., Dutt, B. (., Saraswat, K. C. 2013: 112-113
  • Towards a Photonic Crystal Mode-Locked Laser NOVEL IN-PLANE SEMICONDUCTOR LASERS XII Leedle, K., Janjua, A., Paik, S., Schnitzer, M. J., Harris, J. S. 2013; 8640

    View details for DOI 10.1117/12.2005418

    View details for Web of Science ID 000322737200016

  • Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES II Parameshwaran, V., Xu, X., Kang, Y., Harris, J., Wong, H. P., Clemens, B. 2013; 8620

    View details for DOI 10.1117/12.2003486

    View details for Web of Science ID 000322825200040

  • Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials. Nature communications Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Galambos, L., Manivanh, R., Harris, J., Palanker, D. 2013; 4: 1980-?

    Abstract

    We have previously developed a wireless photovoltaic retinal prosthesis, in which camera-captured images are projected onto the retina using pulsed near-IR light. Each pixel in the subretinal implant directly converts pulsed light into local electric current to stimulate the nearby inner retinal neurons. Here we report that implants having pixel sizes of 280, 140 and 70 μm implanted in the subretinal space in rats with normal and degenerate retina elicit robust cortical responses upon stimulation with pulsed near-IR light. Implant-induced eVEP has shorter latency than visible light-induced VEP, its amplitude increases with peak irradiance and pulse duration, and decreases with frequency in the range of 2-20 Hz, similar to the visible light response. Modular design of the arrays allows scalability to a large number of pixels, and combined with the ease of implantation, offers a promising approach to restoration of sight in patients blinded by retinal degenerative diseases.

    View details for DOI 10.1038/ncomms2980

    View details for PubMedID 23778557

  • Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators OPTICS EXPRESS Edwards, E. H., Audet, R. M., Fei, E. T., Claussen, S. A., Schaevitz, R. K., Tasyurek, E., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 20 (28): 29164-29173

    Abstract

    We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.

    View details for Web of Science ID 000314914500005

    View details for PubMedID 23388742

  • Continuous sensing of tumor-targeted molecular probes with a vertical cavity surface emitting laser-based biosensor JOURNAL OF BIOMEDICAL OPTICS Parashurama, N., O'Sullivan, T. D., de la Zerda, A., El Kalassi, P., Cho, S., Liu, H., Teed, R., Levy, H., Rosenberg, J., Cheng, Z., Levi, O., Harris, J. S., Gambhir, S. S. 2012; 17 (11)

    Abstract

    Molecular optical imaging is a widespread technique for interrogating molecular events in living subjects. However, current approaches preclude long-term, continuous measurements in awake, mobile subjects, a strategy crucial in several medical conditions. Consequently, we designed a novel, lightweight miniature biosensor for in vivo continuous optical sensing. The biosensor contains an enclosed vertical-cavity surface-emitting semiconductor laser and an adjacent pair of near-infrared optically filtered detectors. We employed two sensors (dual sensing) to simultaneously interrogate normal and diseased tumor sites. Having established the sensors are precise with phantom and in vivo studies, we performed dual, continuous sensing in tumor (human glioblastoma cells) bearing mice using the targeted molecular probe cRGD-Cy5.5, which targets ?V?3 cell surface integrins in both tumor neovasculature and tumor. The sensors capture the dynamic time-activity curve of the targeted molecular probe. The average tumor to background ratio after signal calibration for cRGD-Cy5.5 injection is approximately 2.43±0.95 at 1 h and 3.64±1.38 at 2 h (N=5 mice), consistent with data obtained with a cooled charge coupled device camera. We conclude that our novel, portable, precise biosensor can be used to evaluate both kinetics and steady state levels of molecular probes in various disease applications.

    View details for DOI 10.1117/1.JBO.17.11.117004

    View details for Web of Science ID 000314502700046

    View details for PubMedID 23123976

  • Electrically Driven Photonic Crystal Nanocavity Devices IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Shambat, G., Ellis, B., Petykiewicz, J., Mayer, M. A., Majumdar, A., Sarmiento, T., Harris, J. S., Haller, E. E., Vuckovic, J. 2012; 18 (6): 1700-1710
  • Optical Absorption Enhancement in Freestanding GaAs Thin Film Nanopyramid Arrays ADVANCED ENERGY MATERIALS Liang, D., Huo, Y., Kang, Y., Wang, K. X., Gu, A., Tan, M., Yu, Z., Li, S., Jia, J., Bao, X., Wang, S., Yao, Y., Wong, H. P., Fan, S., Cui, Y., Harris, J. S. 2012; 2 (10): 1254-1260
  • Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications OPTICAL MATERIALS EXPRESS Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 2 (10): 1336-1342
  • Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., Kim, H., Sun, M., Park, B., Harris, J. S. 2012; 12 (3): 370-376
  • Antenna electrodes for controlling electroluminescence NATURE COMMUNICATIONS Huang, K. C., Seo, M., Huo, Y., Sarmiento, T., Harris, J. S., Brongersma, M. L. 2012; 3

    Abstract

    Optical antennas can control the emission from quantum emitters by modifying the local density of optical states via the Purcell effect. A variety of nanometallic antennas have been implemented to enhance and control key photoluminescence properties, such as the decay rate, directionality and polarization. However, their implementation in active devices has been hampered by the need to precisely place emitters near an antenna and to efficiently excite them electrically. Here we illustrate a design methodology for antenna electrodes that for the first time facilitates simultaneous operation as electrodes for current injection and as antennas capable of optically manipulating the electroluminescence. We show that by confining the electrically excited carriers to the vicinity of antenna electrodes and maximizing the optical coupling of the emission to a single, well-defined antenna mode, their electroluminescence can be effectively controlled. This work spurs the development of densely integrated, electrically driven light sources with tailored emission properties.

    View details for DOI 10.1038/ncomms1985

    View details for Web of Science ID 000308801100021

    View details for PubMedID 22893129

  • Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements Tassev, V., Snure, M., Peterson, R., Bedford, R., Bliss, D., Bryant, G., Mann, M., Goodhue, W., Vangala, S., Termkoa, K., Lin, A., Harris, J. S., Fejer, M. M., Yapp, C., Tetlak, S. ELSEVIER SCIENCE BV. 2012: 72-77
  • Photovoltaic retinal prosthesis: implant fabrication and performance JOURNAL OF NEURAL ENGINEERING Wang, L., Mathieson, K., Kamins, T. I., Loudin, J. D., Galambos, L., Goetz, G., Sher, A., Mandel, Y., Huie, P., Lavinsky, D., Harris, J. S., Palanker, D. V. 2012; 9 (4)

    Abstract

    The objective of this work is to develop and test a photovoltaic retinal prosthesis for restoring sight to patients blinded by degenerative retinal diseases. A silicon photodiode array for subretinal stimulation has been fabricated by a silicon-integrated-circuit/MEMS process. Each pixel in the two-dimensional array contains three series-connected photodiodes, which photovoltaically convert pulsed near-infrared light into bi-phasic current to stimulate nearby retinal neurons without wired power connections. The device thickness is chosen to be 30 µm to absorb a significant portion of light while still being thin enough for subretinal implantation. Active and return electrodes confine current near each pixel and are sputter coated with iridium oxide to enhance charge injection levels and provide a stable neural interface. Pixels are separated by 5 µm wide trenches to electrically isolate them and to allow nutrient diffusion through the device. Three sizes of pixels (280, 140 and 70 µm) with active electrodes of 80, 40 and 20 µm diameter were fabricated. The turn-on voltages of the one-diode, two-series-connected diode and three-series-connected diode structures are approximately 0.6, 1.2 and 1.8 V, respectively. The measured photo-responsivity per diode at 880 nm wavelength is ?0.36 A W(-1), at zero voltage bias and scales with the exposed silicon area. For all three pixel sizes, the reverse-bias dark current is sufficiently low (<100 pA) for our application. Pixels of all three sizes reliably elicit retinal responses at safe near-infrared light irradiances, with good acceptance of the photodiode array in the subretinal space. The fabricated device delivers efficient retinal stimulation at safe near-infrared light irradiances without any wired power connections, which greatly simplifies the implantation procedure. Presence of the return electrodes in each pixel helps to localize the current, and thereby improves resolution.

    View details for DOI 10.1088/1741-2560/9/4/046014

    View details for Web of Science ID 000306759600027

    View details for PubMedID 22791690

  • Widely tunable midinfrared difference frequency generation in orientation-patterned GaAs pumped with a femtosecond Tm-fiber system OPTICS LETTERS Phillips, C. R., Jiang, J., Mohr, C., Lin, A. C., Langrock, C., Snure, M., Bliss, D., Zhu, M., Hartl, I., Harris, J. S., Fermann, M. E., Fejer, M. M. 2012; 37 (14): 2928-2930

    Abstract

    We demonstrate a midinfrared source tunable from 6.7 to 12.7 ?m via difference frequency generation (DFG) in orientation-patterned GaAs, with 1.3 mW average output power. The input pulses are generated via Raman self-frequency shift of a femtosecond Tm-doped-fiber laser system in a fluoride fiber. We numerically model the DFG process and show good agreement between simulations and experiments. We use this numerical model to show an improved design using longer pump pulses.

    View details for Web of Science ID 000306709900053

    View details for PubMedID 22825181

  • Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by Gamma-valley transport OPTICS EXPRESS Cho, S., Park, B., Yang, C., Cheung, S., Yoon, E., Kamins, T. I., Ben Yoo, S. J., Harris, J. S. 2012; 20 (14): 14921-14927
  • Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Lee, J. S., Cho, S., Park, B., Harris, J. S., Kang, I. M. 2012; 12 (2): 230-239
  • Structural and optical characterization of SixGe1-x-ySny alloys grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 100 (14)

    View details for DOI 10.1063/1.3701732

    View details for Web of Science ID 000302567800026

  • Low-temperature growth of Ge1-xSnx thin films with strain control by molecular beam epitaxy THIN SOLID FILMS Lin, H., Chen, R., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 520 (11): 3927-3930
  • Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides IEEE PHOTONICS TECHNOLOGY LETTERS Ren, S., Rong, Y., Claussen, S. A., Schaevitz, R. K., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 24 (6): 461-463
  • Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopy APPLIED PHYSICS LETTERS Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 100 (10)

    View details for DOI 10.1063/1.3692735

    View details for Web of Science ID 000301655500038

  • Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells IEEE JOURNAL OF QUANTUM ELECTRONICS Schaevitz, R. K., Edwards, E. H., Roth, J. E., Fei, E. T., Rong, Y., Wahl, P., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 48 (2): 187-197
  • Photovoltaic Retinal Prosthesis with High Pixel Density. Nature photonics Mathieson, K., Loudin, J., Goetz, G., Huie, P., Wang, L., Kamins, T. I., Galambos, L., Smith, R., Harris, J. S., Sher, A., Palanker, D. 2012; 6 (6): 391-397

    Abstract

    Retinal degenerative diseases lead to blindness due to loss of the "image capturing" photoreceptors, while neurons in the "image processing" inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm(2), two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 ?m bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density.

    View details for PubMedID 23049619

  • Frequency Response of a Common-Source (CS) Amplifier Embedding Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor (TFET) Harris, J., S., Hyungjin, S., Cho, Byung-Gook, James 2012
  • All-epitaxial Growth of Orientation-patterned Gallium Phosphide (OPGaP) Tech. Dig. OSA Lasers, Sources, and Related Photonic Devices, ITh5B.5-1-3 Schunemann, P., G., Mohnkern, L., Vera, A., Yang, X., S., Lin, A., C., Harris, J., S 2012
  • Simulation Study on Process Conditions for High-Speed Silicon Photodetector and Quantum-Well Structuring for Increased Number of Wavelength Discriminations Cho, S., Kim, H., Sun, M., C., Kamins, T., I., Park, B., G., Harris Jr., J., S. 2012
  • Design Consideration for Heterojunction P-Type Tunneling Field-Effect Transistor with Narrow-Bandgap Source Material Harris, J., S., Hyun, S., Cho, Byung-Gook, W., Kim, James 2012
  • Room Temperature Photoluminescence from Ge/SiGe Quantum Well Structure in Microdisk Resonator Harris, J., S., Chen, X., Huo, Y., Fei, E., Shambat, G., Liu, X. 2012
  • MBE growth of tensile-strained Ge quantum wells and quantum dots Front. Optoelectron. Chin. Online Huo, Y., Lin, H., Chen, R., Rong, Y., Kamins, T., I., Harris, J., S. 2012
  • 1550-nm Germanium Light-Emitting Diode by Momentum Conservation Transport Harris, J., S., Cho, S., Cheung, S., Yang, C., Kim, H., Yoon, E. 2012
  • Monte Carlo Simulations of the Influence of Localization Centres on Carrier Dynamics in GaInNAs Quantum Wells Acta Physica Polonica Harris, J., S., Baranowski, M., Kudrawiec, R., Latkowska, M., Syperek, M., Misiewicz, J. 2012; 6 (122): 1022-1025
  • Temperature dependence of Ge quantum well light emitting diode on Si substrate Harris, J., S., Fei, E., T., Yijie Huo, E., T., Chen, X., Miller, G., Zang, K. 2012
  • GaInNAs(Sb) Long-Wavelength VCSELs VCSELs, Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers Harris, J., S., Bae, H. edited by Michalzik, R. Springer-Verlag Berlin Heidelberg. 2012: 1-25
  • Photonic Crystal Nanocavity Lasers and Modulators 2012 IEEE PHOTONICS CONFERENCE (IPC) Vuckovic, J., Shambat, G., Petykiewicz, J., Ellis, B., Majumdar, A., Sarmiento, T., Mayer, M., Harris, J., Haller, E. 2012: 459-460
  • Light Emission in Ge Quantum Wells 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Fei, E. T., Huo, Y., Shambat, G., Chen, X., Liu, X., Claussen, S. A., Edwards, E. H., Kamins, T. I., Miller, D. A., Vuckovic, J., Harris, J. S. 2012
  • Optical Fiber Tips Functionalized with Semiconductor Photonic Crystal Cavities 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Shambat, G., Provine, J., Rivoire, K., Sarmiento, T., Harris, J., Vuckovic, J. 2012
  • A New Approach to Ge Lasers with Low Pump Power 2012 IEEE PHOTONICS CONFERENCE (IPC) Chen, X., Huo, Y., Fei, E. T., Shambat, G., Zang, K., Liu, X., Chen, Y., Kamins, T. I., Vuckovic, J., Harris, J. S. 2012: 60-61
  • GaAs thin film nanostructure arrays for III-V solar cell applications Liang, D., Kang, Y., Huo, Y., Wang, K. X., Gu, A., Tan, M., Yu, Z., Lia, S., Jia, J., Bao, X., Wang, S., Yao, Y., Fan, S., Cui, Y., Harris, J. SPIE-INT SOC OPTICAL ENGINEERING. 2012

    View details for DOI 10.1117/12.909743

    View details for Web of Science ID 000302582400036

  • Selective-Area Growth of Ge and Ge/SiGe Quantum Wells in 3 mu m Silicon-on-Insulator Waveguides 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. 2012
  • Optical properties of Ge1-zSnz/SixGe1-x-ySny heterostructures 2012 IEEE PHOTONICS CONFERENCE (IPC) Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012: 919-920
  • Ultra-Low Threshold and High Speed Electrically Driven Photonic Crystal Nanocavity Lasers and LEDs 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Vuckovic, J., Ellis, B., Shambat, G., Petykiewicz, J., Majumdar, A., Sarmiento, T., Mayer, M., Harris, J., Haller, E. 2012
  • Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance IEICE ELECTRONICS EXPRESS Cho, S., Kim, H., Sun, M., Kang, I. M., Park, B., Harris, J. S. 2012; 9 (9): 828-833

    View details for DOI 10.1587/elex.9.828

    View details for Web of Science ID 000305324600003

  • Ultrafast Direct Modulation of a Single-Mode Photonic Crystal Nanocavity Light-Emitting Diode 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Shambat, G., Ellis, B., Majumdar, A., Petykiewicz, J., Mayer, M., Sarmiento, T., Harris, J., Haller, E., Vuckovic, J. 2012
  • Photovoltaic retinal prosthesis for restoring sight to the blind: implant design and fabrication MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVII Wang, L., Mathieson, K., Kamins, T. I., Loudin, J., Galambos, L., Harris, J. S., Palanker, D. 2012; 8248

    View details for DOI 10.1117/12.909104

    View details for Web of Science ID 000302640000004

  • Electrically driven photonic crystal nanocavity lasers, LEDs, and modulators NOVEL IN-PLANE SEMICONDUCTOR LASERS XI Shambat, G., Ellis, B., Mayer, M., Majumdar, A., Petykiewicz, J., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2012; 8277

    View details for DOI 10.1117/12.907432

    View details for Web of Science ID 000305332300003

  • Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation APPLIED PHYSICS LETTERS Cho, S., Kang, I. M., Kamins, T. I., Park, B., Harris, J. S. 2011; 99 (24)

    View details for DOI 10.1063/1.3670325

    View details for Web of Science ID 000298254200065

  • Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors IEEE TRANSACTIONS ON ELECTRON DEVICES Cho, S., Lee, J. S., Kim, K. R., Park, B., Harris, J. S., Kang, I. M. 2011; 58 (12): 4164-4171
  • Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell JOURNAL OF CRYSTAL GROWTH Tan, K. H., Wicaksono, S., Loke, W. K., Li, D., Yoon, S. F., Fitzgerald, E. A., Ringel, S. A., Harris, J. S. 2011; 335 (1): 66-69
  • Optical fiber tips functionalized with semiconductor photonic crystal cavities APPLIED PHYSICS LETTERS Shambat, G., Provine, J., Rivoire, K., Sarmiento, T., Harris, J., Vuckovic, J. 2011; 99 (19)

    View details for DOI 10.1063/1.3660278

    View details for Web of Science ID 000297030200002

  • Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode NATURE COMMUNICATIONS Shambat, G., Ellis, B., Majumdar, A., Petykiewicz, J., Mayer, M. A., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011; 2

    Abstract

    Low-power and electrically controlled optical sources are vital for next generation optical interconnect systems to meet strict energy demands. Current optical transmitters consisting of high-threshold lasers plus external modulators consume far too much power to be competitive with future electrical interconnects. Here we demonstrate a directly modulated photonic crystal nanocavity light-emitting diode (LED) with 10?GHz modulation speed and less than 1?fJ per bit energy of operation, which is orders of magnitude lower than previous solutions. The device is electrically controlled and operates at room temperature, while the high modulation speed results from the fast relaxation of the quantum dots used as the active material. By virtue of possessing a small mode volume, our LED is intrinsically single mode and, therefore, useful for communicating information over a single narrowband channel. The demonstrated device is a major step forward in providing practical low-power and integrable sources for on-chip photonics.

    View details for DOI 10.1038/ncomms1543

    View details for Web of Science ID 000297686500026

    View details for PubMedID 22086339

  • Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Chen, R., Lin, H., Huo, Y., Hitzman, C., Kamins, T. I., Harris, J. S. 2011; 99 (18)

    View details for DOI 10.1063/1.3658632

    View details for Web of Science ID 000296659400025

  • Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator With 20-nm Free-Spectral Range IEEE PHOTONICS TECHNOLOGY LETTERS Cho, S., Chen, R., Koo, S., Shambat, G., Lin, H., Park, N., Vuckovic, J., Kamins, T. I., Park, B., Harris, J. S. 2011; 23 (20)
  • Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., Sun, M., Kim, G., Kamins, T. I., Park, B., Harris, J. S. 2011; 11 (3): 182-189
  • Nanobeam photonic crystal cavity light-emitting diodes APPLIED PHYSICS LETTERS Shambat, G., Ellis, B., Petykiewicz, J., Mayer, M. A., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011; 99 (7)

    View details for DOI 10.1063/1.3625432

    View details for Web of Science ID 000294208900005

  • Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3 JAPANESE JOURNAL OF APPLIED PHYSICS Ueda, T., Yuri, M., Harris, J. S. 2011; 50 (8)
  • Raman study of strained Ge1-xSnx alloys APPLIED PHYSICS LETTERS Lin, H., Chen, R., Huo, Y., Kamins, T. I., Harris, J. S. 2011; 98 (26)

    View details for DOI 10.1063/1.3606384

    View details for Web of Science ID 000292335700027

  • Optical Gain in GaInNAs and GaInNAsSb Quantum Wells IEEE JOURNAL OF QUANTUM ELECTRONICS Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., Tansu, N., Mawst, L. J. 2011; 47 (6): 870-877
  • X-ray diffraction analysis of step-graded InxGa1-xAs buffer layers grown by molecular beam epitaxy Lin, H., Huo, Y., Rong, Y., Chen, R., Kamins, T. I., Harris, J. S. ELSEVIER SCIENCE BV. 2011: 17-20
  • Two-dimensional III-V nucleation on Si for nonlinear optics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Lin, A. C., Harris, J. S., Fejer, M. M. 2011; 29 (3)

    View details for DOI 10.1116/1.3562191

    View details for Web of Science ID 000291111300056

  • Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser NATURE PHOTONICS Ellis, B., Mayer, M. A., Shambat, G., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011; 5 (5): 297-300
  • Experimental demonstration of two methods for controlling the group delay in a system with photonic-crystal resonators coupled to a waveguide OPTICS LETTERS Huo, Y., Sandhu, S., Pan, J., Stuhrmann, N., Povinelli, M. L., Kahn, J. M., Harris, J. S., Fejer, M. M., Fan, S. 2011; 36 (8): 1482-1484

    Abstract

    We measure the group delay in an on-chip photonic-crystal device with two resonators side coupled to a waveguide. We demonstrate that such a group delay can be controlled by tuning either the propagation phase of the waveguide or the frequency of the resonators.

    View details for Web of Science ID 000290034500059

    View details for PubMedID 21499397

  • Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition APPLIED PHYSICS LETTERS Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2011; 98 (15)

    View details for DOI 10.1063/1.3574912

    View details for Web of Science ID 000289580800008

  • Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Huo, Y., Lin, H., Chen, R., Makarova, M., Rong, Y., Li, M., Kamins, T. I., Vuckovic, J., Harris, J. S. 2011; 98 (1)

    View details for DOI 10.1063/1.3534785

    View details for Web of Science ID 000286009800012

  • GeSn Technology: Extending the Ge Electronics Roadmap 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) Gupta, S., Chen, R., Magyari-Kope, B., Lin, H., Yang, B., Nainani, A., Nishi, Y., Harris, J. S., Saraswat, K. C. 2011
  • MBE growth of tensile-strained Ge quantum wells and quantum dots Front. Optoelectron. Huo, Y., Lin, H., Chen, R., Rong, Y., Kamins, T., I., Harris, J., S. 2011

    View details for DOI 10.1007 /s12200-012-0193

  • Experimental demonstration of two methods for controlling the group delay in a system with photonic-crystal resonators coupled to a waveguide Opt. Lett. Harris, J., S., Huo, Y., Sandhu, S., Pan, J., Stuhrmann, N., Povinelli, M. 2011; 4 (36): 1482-1483
  • Small-Signal Modeling of Gate-All-Around (GAA) Junctionless MOSFETs for Sub-millimeter Wave Application Cho, S., Lee, J., Sung, Kang, I., Man, Park, B., G., Harris, J., S. 2011
  • Silicon-Compatible Bulk-Type Compound Junctionless Field-Effect Transistor Harris, J., S., Se, S., Cho, Byung-Gook, H., Park, James 2011
  • Direct-Bandgap Photoluminescence of MBE-grown Ge1-xSnx Alloys Chen, R., Huo, Y., Lin, H., Hitzman, C., J., Kamins, T., I., Harris, J., S. 2011
  • Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation Applied Phys. Lett. Cho, S., Kang, I. M., Kamins, T., I., Park, B., G., Harris Jr., J., S. 2011; 24 (99): 243505-1-4
  • Ge quantum well resonator modulators Schaevitz, R., K., Rong, Y., Claussen, S., A., Kamins, T., I., Vuckovic, J., Harris Jr., J., S. 2011
  • Fabrication and Characterization of Whispering Gallery Mode (WGM) Microdisk Resonator Based on Epitaxially Grown GeSn Harris, J., S., Cho, S., Chen, R., Lin, H., Huo, Y., Shambat, G. 2011
  • Design Optimization of Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) of Ge-AlxGa1-xAs System for High Performance Logic Technology Cho, S., Sun, M., C., Kim, G., Park, B., G., Harris, J., S. 2011
  • Surface Roughness Effect on Q-Factor of Ge Whispering Gallery Mode Microdisk Resonator Harris, J., S., Cho, S., Koo, S., Yoo, K., Pickett, E., R., Park, N. 2011
  • A novel nano-structured GaAs solar cell Harris, J., S., Liang, D., Gu, A., Huo, Y., Yan, J., Li, S. 2011
  • Fast epitaxial growth of thick quasi-phase matched GaP for applications in the MIR and THz: determination of the optimal substrate and pattern orientation 2011 36TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) Tassev, V., Snure, M., Peterson, R., Bliss, D., Bryant, G., Goodhue, W., Vangala, S., Termkoa, K., Lin, A., Harris, J. S., Fejer, M. M., Yapp, C. 2011
  • A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides Kamins, T., I., Harris, J., S., B., D., A. 2011
  • Simple Electroabsorption Calculator for Germanium Quantum Well Devices Audet, R., M., Rong, Y., Claussen, S., A., Tasyurek, E., Roth, J., E., Harris Jr., J., S. 2011
  • Optical gain in GaInNAs and GaInNAsSb quantum wells 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., Tansu, N., Mawst, L. J. 2011
  • Ultra-low Threshold Electrically Pumped Quantum Dot Photonic Crystal Nanocavity Laser 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Ellis, B., Mayer, M. A., Shambat, G., Sarmiento, T., Harris, J., Haller, E. E., Vuckovic, J. 2011
  • Photovoltaic Retinal Prosthesis OPHTHALMIC TECHNOLOGIES XXI Loudin, J., Mathieson, K., Kamins, T., Wang, L., Galambos, L., Huie, P., Sher, A., Harris, J., Palanker, D. 2011; 7885

    View details for DOI 10.1117/12.876560

    View details for Web of Science ID 000297590500028

  • Integrated photonic structures for parallel fluorescence and refractive index biosensing PHOTONIC MICRODEVICES/MICROSTRUCTURES FOR SENSING III Lee, M. M., O'Sullivan, T. D., Cerruto, A., Liu, V., Zhang, J., Levi, O., Lee, H., Brueck, S. R., Fan, S., Harris, J. S. 2011; 8034

    View details for DOI 10.1117/12.884228

    View details for Web of Science ID 000294154700005

  • Emerging applications for vertical cavity surface emitting lasers SEMICONDUCTOR SCIENCE AND TECHNOLOGY Harris, J. S., O'Sullivan, T., Sarmiento, T., Lee, M. M., Vo, S. 2011; 26 (1)
  • Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., O'uchi, S., Endo, K., Kim, S. W., Son, Y., Kang, I. M., Masahara, M., Harris, J. S., Park, B. 2010; 10 (4): 265-275
  • Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes APPLIED PHYSICS LETTERS Seo, D., Jeon, S., Seo, S., Song, I., Kim, C., Park, S., Harris, J. S., Chung, U. 2010; 97 (17)

    View details for DOI 10.1063/1.3490245

    View details for Web of Science ID 000284233600027

  • Tuning the coherent interaction in an on-chip photonic-crystal waveguide-resonator system APPLIED PHYSICS LETTERS Pan, J., Huo, Y., Sandhu, S., Stuhrmann, N., Povinelli, M. L., Harris, J. S., Fejer, M. M., Fan, S. 2010; 97 (10)

    View details for DOI 10.1063/1.3486686

    View details for Web of Science ID 000282478800002

  • Implantable semiconductor biosensor for continuous in vivo sensing of far-red fluorescent molecules OPTICS EXPRESS O'Sullivan, T., Munro, E. A., Parashurama, N., Conca, C., Gambhir, S. S., Harris, J. S., Levi, O. 2010; 18 (12): 12513-12525

    Abstract

    We have fabricated miniature implantable fluorescence sensors for continuous fluorescence sensing applications in living subjects. These monolithically integrated GaAs-based sensors incorporate a 675 nm vertical-cavity surface-emitting laser (VCSEL), a GaAs PIN photodiode, and a fluorescence emission filter. We demonstrate high detection sensitivity for Cy5.5 far-red dye (50 nanoMolar) in living tissue, limited by the intrinsic background autofluorescence. These low cost, sensitive and scalable sensors are promising for long-term continuous monitoring of molecular dynamics for biomedical studies in freely moving animals.

    View details for Web of Science ID 000278527700052

    View details for PubMedID 20588377

  • Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction APPLIED PHYSICS LETTERS Ellis, B., Sarmiento, T., Mayer, M., Zhang, B., Harris, J., Haller, E., Vuckovic, J. 2010; 96 (18)

    View details for DOI 10.1063/1.3425663

    View details for Web of Science ID 000277422000003

  • Nanobeam photonic crystal cavity quantum dot laser OPTICS EXPRESS Gong, Y., Ellis, B., Shambat, G., Sarmiento, T., Harris, J. S., Vuckovic, J. 2010; 18 (9): 8781-8789

    Abstract

    The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is calculated. We study the cavity lasers under both 780 nm and 980 nm pump, finding thresholds as low as 0.3 microW and 19 microW for the two pump wavelengths, respectively. Finally, the nanobeam cavity laser wavelengths are tuned by up to 7 nm by employing a fiber taper in near proximity to the cavities. The fiber taper is used both to efficiently pump the cavity and collect the cavity emission.

    View details for Web of Science ID 000277082200006

    View details for PubMedID 20588722

  • Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs substrates Singh, N. B., Kanner, G. S., Berghmans, A., Kahler, D., Lin, A., Wagner, B., Kelley, S. P., KNUTESON, D. J., HOLMSTROM, R., Schepler, K. L., Peterson, R., Fejer, M. M., Harris, J. S. ELSEVIER SCIENCE BV. 2010: 1142-1145
  • Extracting systematic factors in a continuous-time credit migration model JOURNAL OF CREDIT RISK Thompson, H., Harris, J. 2010; 6 (1): 31-53
  • Photoreflectance and photoluminescence study of GaInNAsSb layers lattice matched to InP JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Sarmiento, T., Poloczek, P., Misiewicz, J., Harris, J. S. 2010; 107 (4)

    View details for DOI 10.1063/1.3280030

    View details for Web of Science ID 000275028900039

  • Experimental demonstration of an all-optical analogue to the superradiance effect in an on-chip photonic crystal resonator system PHYSICAL REVIEW B Pan, J., Sandhu, S., Huo, Y., Stuhrmann, N., Povinelli, M. L., Harris, J. S., Fejer, M. M., Fan, S. 2010; 81 (4)
  • Simple electroabsorption model for germanium quantum well devices Harris, J., S., Schaevitz, R., K., Edwards, E., H., Audet, R., M., Rong, Y., Ren 2010
  • Simple electroabsorption model for silicongermanium/germanium quantum well devices Harris, J., S., Schaevitz, R., K., Roth, J., E., Edwards, E., H., Audet, R., M., Claussen 2010
  • Fabrication of Prototype Magnetic Coupled Spin-torque Devices for Non-volatile Logic Applications Leem, L., Harris, J., S., Rettner, C., Hughes, B., Jiang, X., Yang, S., H. 2010
  • Experimental demonstration of an all-optical analogue to the superradiance effect in an on-chip photonic crystal resonator system Phys. Rev. Pan, J., Sandhu, S., Huo, Y., Stuhrmann, N., Povinelli, M., Harris, J., S. 2010; 4 (B81): 041101-1-3
  • Multi-scale Simulations of Partially Unzipped CNT Hetero-junction Tunneling Field Effect Transistor 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST Leem, L., Srivastava, A., Li, S., Magyari-Koepe, B., Iannaccone, G., Harris, J. S., Fiori, G. 2010
  • Integration of Germanium Quantum Well Structures on a Silicon-on-Insulator Waveguide Platform for Optical Modulator Applications 2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2010: 60-62
  • Si-Ge Surface-normal Asymmetric Fabry-Perot Quantum-confined Stark Effect Electroabsorption Modulator 2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY Edwards, E. H., Audet, R. M., Rong, Y., Claussen, S. A., Schaevitz, R. K., Tasyuerek, E., Ren, S., Kamins, T. I., Harris, J. S., Miller, D. A., Dosunmu, O. I., Uenlue, M. S. 2010: 514-515
  • MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift 2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) Huo, Y., Chen, R., Lin, H., Kamins, T. I., Harris, J. S. 2010: 344-346
  • Electrically Pumped Photonic Crystal Nanocavities Using a Laterally Doped p-i-n Junction 2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) Ellis, B., Sarmiento, T., Mayer, M., Stone, P., Beeman, J., Zhang, B., Dubon, O., Haller, E., Yamamoto, Y., Harris, J., Vuckovic, J. 2010
  • Fabrication of an integrated 670nm VCSEL-based sensor for miniaturized fluorescence sensing VERTICAL-CAVITY SURFACE-EMITTING LASERS XIV O'Sullivan, T. D., Munro, E., Harris, J. S., Levi, O. 2010; 7615

    View details for DOI 10.1117/12.842096

    View details for Web of Science ID 000283918300013

  • Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Rong, Y., Ge, Y., Huo, Y., Fiorentino, M., Tan, M. R., Kamins, T. I., Ochalski, T. J., Huyet, G., Harris, J. S. 2010; 16 (1): 85-92
  • FACETING AND DISORDER IN NANOWIRE SOLAR CELL ARRAYS Pickett, E., Gu, A., Huo, Y., Garnett, E., Hu, S., Sarmiento, T., Thombare, S., Liang, D., Li, S., Cui, Y., McGehee, M., McIntyre, P., Harris, J. IEEE. 2010: 1848-1853
  • DESIGN AND GROWTH OF III-V NANOWIRE SOLAR CELL ARRAYS ON LOW COST SUBSTRATES Gu, A., Huo, Y., Hu, S., Sarmiento, T., Pickett, E., Liang, D., Li, S., Lin, A., Thombare, S., Yu, Z., Fan, S., McIntyre, P., Cui, Y., Harris, J. IEEE. 2010: 2034-2037
  • Nonradiative recombination in 1.56 mu m GaInNAsSb/GaNAs quantum-well lasers APPLIED PHYSICS LETTERS Ferguson, J. W., Smowton, P. M., Blood, P., Bae, H., Sarmiento, T., Harris, J. S. 2009; 95 (23)

    View details for DOI 10.1063/1.3271182

    View details for Web of Science ID 000272627700004

  • Design and Analysis of CMOS-Controlled Tunable Photodetectors for Multiwavelength Discrimination JOURNAL OF LIGHTWAVE TECHNOLOGY Chen, R., Fu, J., Miller, D. A., Harris, J. S. 2009; 27 (23): 5451-5460
  • Optical probes of orientation-patterned ZnSe quasi-phase-matched devices OPTICAL ENGINEERING Kanner, G. S., Marable, M. L., Singh, N. B., Berghmans, A., Kahler, D., Wagner, B., Lin, A., Fejer, M. M., Harris, J. S., Schepler, K. L. 2009; 48 (11)

    View details for DOI 10.1117/1.3257266

    View details for Web of Science ID 000273210600011

  • GaAs-based 1.53 mu m GaInNAsSb vertical cavity surface emitting lasers ELECTRONICS LETTERS Sarmiento, T., Bae, H. P., O'Sullivan, T. D., Harris, J. S. 2009; 45 (19): 978-U28
  • Electrically controlled modulation in a photonic crystal nanocavity OPTICS EXPRESS Englund, D., Ellis, B., Edwards, E., Sarmiento, T., Harris, J. S., Miller, D. A., Vuckovic, J. 2009; 17 (18): 15409-15419

    Abstract

    We describe a compact modulator based on a photonic crystal nanocavity whose resonance is electrically controlled through an integrated p-i-n junction. The sub-micron size of the nanocavity promises very low capacitance, high bandwidth, and efficient on-chip integration in optical interconnects.

    View details for Web of Science ID 000269781700003

    View details for PubMedID 19724539

  • Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells SEMICONDUCTOR SCIENCE AND TECHNOLOGY Mintairov, A. M., Sun, K., Merz, J. L., Yuen, H., Bank, S., Wistey, M., Harris, J. S., PEAKE, G., Egorov, A., Ustinov, V., Kudrawiec, R., Misiewicz, J. 2009; 24 (7)
  • Magnetic coupled spin-torque devices for nonvolatile logic applications Leem, L., Harris, J. S. AMER INST PHYSICS. 2009

    View details for DOI 10.1063/1.3056141

    View details for Web of Science ID 000266633500495

  • High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication JOURNAL OF CRYSTAL GROWTH Choi, D., Harris, J. S., Kim, E., McIntyre, P. C., Cagnon, J., Stemmer, S. 2009; 311 (7): 1962-1971
  • QUaD: A HIGH-RESOLUTION COSMIC MICROWAVE BACKGROUND POLARIMETER ASTROPHYSICAL JOURNAL Hinderks, J. R., Ade, P., Bock, J., Bowden, M., Brown, M. L., Cahill, G., Carlstrom, J. E., Castro, P. G., Church, S., Culverhouse, T., Friedman, R., Ganga, K., Gear, W. K., Gupta, S., Harris, J., Haynes, V., Keating, G., Kovac, J., Kirby, E., Lange, A. E., Leitch, E., Mallie, O. E., Melhuish, S., Memari, Y., Murphy, A., Orlando, A., Schwarz, R., Sullivan, C. O., Piccirillo, L., Pryke, C., Rajguru, N., Rusholme, B., Taylor, A. N., Thompson, K. L., Tucker, C., Turner, A. H., Wu, E. Y., Zemcov, M. 2009; 692 (2): 1221-1246
  • Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 mu m: Broadening of the fundamental transition APPLIED PHYSICS LETTERS Kudrawiec, R., Poloczek, P., Misiewicz, J., Bae, H. P., Sarmiento, T., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris, J. S. 2009; 94 (3)

    View details for DOI 10.1063/1.3073718

    View details for Web of Science ID 000262724000010

  • Implantable optical biosensor for in vivo molecular imaging OPTICAL FIBERS AND SENSORS FOR MEDICAL DIAGNOSTICS AND TREATMENT APPLICATIONS IX O'Sullivan, T. D., Munro, E., de la Zerda, A., Parashurama, N., Teed, R., Walls, Z., Levi, O., Gambhir, S. S., Harris, J. S. 2009; 7173

    View details for DOI 10.1117/12.811227

    View details for Web of Science ID 000284821100007

  • High quality III-V materials growth on Si (100) substrate via Ge buffer J. Crystal Growth Choi, D., Cagnon, J., Kim, E., Stemmer, S., McIntyre, P., C., Harris, J., S. 2009: 1962-71
  • Origin of non radiative recombination in GaInNAsSb/GaNAs quantum well lasers Ferguson, J., Smowton, P., Blood, P., Bae, H., P., Sarmiento, T., Harris, J., S. 2009
  • A Implantable optical biosensor for in vivo molecular imaging Harris, J., S., O'Sullivan, T., D., Munro, E., Zerda, A., de la, Parashurama, N., Teed, R. 2009
  • High Efficiency Solar Cells based on Spontaneous Emission Inhibition in Photonic Crystals 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 Ellis, B., Sarmiento, T., Harris, J., Vuckovic, J. 2009: 2659-2660
  • Fermi Level Depinning For the Design of III-V FET Source/Drain Contacts PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS Hu, J., Guan, X., Choi, D., Harris, J. S., Saraswat, K., Wong, H. P. 2009: 123-124
  • 1528 nm GaInNAsSb/GaAs Vertical Cavity Surface Emitting Lasers 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 Sarmiento, T., Bae, H., O'Sullivan, T. D., Harris, J. S. 2009: 1629-1630
  • Direct Band Gap Tensile-Strained Germanium 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 Huo, Y., Lin, H., Rong, Y., Makarova, M., Kamins, T. I., Vuckovic, J., Harris, J. S. 2009: 824-825
  • Near-infrared in vivo fluorescence sensor with integrated dielectric emission filter 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 O'Sullivan, T. D., Munro, E., Conca, C., Parashurama, N., de la Zerda, A., Gambhir, S. S., Harris, J. S., Levi, O. 2009: 3085-3086
  • Towards responsible use of cognitive-enhancing drugs by the healthy NATURE Greely, H., Sahakian, B., Harris, J., Kessler, R. C., Gazzaniga, M., Campbell, P., Farah, M. J. 2008; 456 (7223): 702-705

    View details for DOI 10.1038/456702a

    View details for Web of Science ID 000261559900020

    View details for PubMedID 19060880

  • Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy JOURNAL OF ELECTRONIC MATERIALS Kim, S. M., Yuen, H. B., Hatami, F., Chin, A., Harris, J. S. 2008; 37 (12): 1774-1779
  • Growth of mm-thick orientation-patterned GaAs for IR and THZ generation JOURNAL OF CRYSTAL GROWTH Lynch, C., Bliss, D. F., Zens, T., Lin, A., Harris, J. S., Kuo, P. S., Fejer, M. M. 2008; 310 (24): 5241-5247
  • Analysis of Active Hybrid Fiber-Semiconductor Devices for Optical Networks IEEE JOURNAL OF QUANTUM ELECTRONICS Khalili, A., Lim, X. H., Bae, H., Harris, J. S. 2008; 44 (11-12): 1042-1054
  • A review of progress on nano-aperture VCSEL CHINESE OPTICS LETTERS Rao, Z., Vo, S., Harris, J. S. 2008; 6 (10): 748-754
  • Low surface roughness and threading dislocation density Ge growth on Si (001) JOURNAL OF CRYSTAL GROWTH Choi, D., Ge, Y., Harris, J. S., Cagnon, J., Stemmer, S. 2008; 310 (18): 4273-4279
  • Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators APPLIED PHYSICS LETTERS Shin, B., Choi, D., Harris, J. S., Mclntyre, P. C. 2008; 93 (5)

    View details for DOI 10.1063/1.2966357

    View details for Web of Science ID 000258335900058

  • On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32% JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Misiewicz, J. 2008; 104 (3)

    View details for DOI 10.1063/1.2961330

    View details for Web of Science ID 000258493900052

  • Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge APPLIED PHYSICS LETTERS Ardalan, P., Pickett, E. R., Harris, J. S., Marshall, A. F., Bent, S. F. 2008; 92 (25)

    View details for DOI 10.1063/1.2951608

    View details for Web of Science ID 000257231200043

  • Molecular-beam epitaxial growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication APPLIED PHYSICS LETTERS Choi, D., Kim, E., McIntyre, P. C., Harris, J. S. 2008; 92 (20)

    View details for DOI 10.1063/1.2929386

    View details for Web of Science ID 000256196600093

  • Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning APPLIED PHYSICS LETTERS Pan, J., Huo, Y., Yamanaka, K., Sandhu, S., Scaccabarozzi, L., Timp, R., Povinelli, M. L., Fan, S., Fejer, M. M., Harris, J. S. 2008; 92 (10)

    View details for DOI 10.1063/1.2896615

    View details for Web of Science ID 000253989300114

  • Terahertz sources based on intracavity parametric down-conversion in quasi-phase-matched gallium arsenide IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Schaar, J. E., Vodopyanov, K. L., Kuo, P. S., Fejer, M. M., Yu, X., Lin, A., Harris, J. S., Bliss, D., Lynch, C., Kozlov, V. G., Hurlbut, W. 2008; 14 (2): 354-362
  • The quasi-optical design of the QUaD telescope INFRARED PHYSICS & TECHNOLOGY O'Sullivan, C., Cahill, G., Murphy, J. A., Gear, W. K., Harris, J., Ade, P. A., Church, S. E., Thompson, K. L., Pryke, C., Bock, J., Bowden, M., Brown, M. L., Carlstrom, J. E., Castro, P. G., Culverhouse, T., Friedman, R. B., Ganga, K. M., Haynes, V., Hinderks, J. R., Kovak, J., Lange, A. E., Leitch, E. M., Mallie, O. E., Melhuish, S. J., Orlando, A., Piccirillo, L., Pisano, G., Rajguru, N., Rusholme, B. A., Schwarz, R., Taylor, A. N., Wu, E. Y., Zemcov, M. 2008; 51 (4): 277-286
  • C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing ELECTRONICS LETTERS Roth, J. E., Fidaner, O., Edwards, E. H., Schaevitz, R. K., Kuo, Y., Helman, N. C., Kamins, T. I., Harris, J. S., Miller, D. A. 2008; 44 (1): 49-U63
  • Tunable narrow-bandwidth source of THz radiation based on frequency down-conversion in periodically structured gallium arsenide TERAHERTZ TECHNOLOGY AND APPLICATIONS Schaar, J. E., Vodopyanov, K. L., Kuo, P. S., Fejer, M. M., Lin, A., Yu, X., Harris, J. S., Bliss, D., Lynch, C., Kozlov, V. G., Hurlbut, W. 2008; 6893

    View details for DOI 10.1117/12.763631

    View details for Web of Science ID 000254732000004

  • Electronmodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and Effective Mass Issues Dilute III-V Nitride Semiconductors and Materials Systems Misiewicz, J., Kudrawiec, R., Gladysiewicz, M., Harris, J., S. edited by Erol, A. Springer Series in Materials Science Springer-Verlag, Berlin, Germany. 2008
  • The Fermi level position in as-grown GaInNAS(Sb) quantum wells and layers studied by contactless electroreflectance PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008 Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Gladysiewicz, M., Misiewicz, J. 2008; 5 (2): 473-477
  • Low-frequency noise characterization of near-IR VCSELs for functional brain imaging PHOTONIC THERAPEUTICS AND DIAGNOSTICS IV Lee, T. T., Lim, P. G., Harris, J. S., Shenoy, K. V., Smith, S. J. 2008; 6842

    View details for DOI 10.1117/12.764143

    View details for Web of Science ID 000255314100050

  • GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 mu m VERTICAL-CAVITY SURFACE-EMITTING LASERS XII Gobe, M., Bae, H. P., Sarmiento, T., Harris, J. S. 2008; 6908

    View details for DOI 10.1117/12.762311

    View details for Web of Science ID 000254737900019

  • Magnetic Coupled Spin-torque Devices and Magnetic Ring Oscillator IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST Leem, L., Harris, J. S. 2008: 159-162
  • Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Misiewicz, J. 2007; 102 (11)

    View details for DOI 10.1063/1.2817258

    View details for Web of Science ID 000251678800024

  • Effects of different plasma species (atomic N, metastable N-2(*), and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy APPLIED PHYSICS LETTERS Oye, M. M., Mattord, T. J., Hallock, G. A., Bank, S. R., Wistey, M. A., Reifsnider, J. M., Ptak, A. J., Yuen, H. B., Harris, J. S., Holmes, A. L. 2007; 91 (19)

    View details for DOI 10.1063/1.2806226

    View details for Web of Science ID 000250810300029

  • GaAs optical parametric oscillator with circularly polarized and depolarized pump OPTICS LETTERS Kuo, P. S., Vodopyanov, K. L., Fejer, M. M., Yu, X., Harris, J. S., Bliss, D. F., Weyburne, D. 2007; 32 (18): 2735-2737

    Abstract

    We demonstrate an optical parametric oscillator (OPO) based on GaAs pumped with linearly polarized and circularly polarized light and show that the relative OPO thresholds agree with theoretical expectations. For the circularly polarized pump, the threshold was as low as for the [111]-linearly polarized pump case. The pump was also passed through a Lyot depolarizer to produce pseudo-depolarized light, and the OPO threshold in this case was only 22% higher than that for [001]-linearly polarized pump.

    View details for Web of Science ID 000250151900035

    View details for PubMedID 17873952

  • Recent progress on 1.55-mu m dilute-nitride lasers IEEE JOURNAL OF QUANTUM ELECTRONICS Bank, S. R., Bae, H., Goddard, L. L., Yuen, H. B., Wistey, M. A., Kudrawiec, R., Harris, J. S. 2007; 43 (9-10): 773-785
  • Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared IEEE PHOTONICS TECHNOLOGY LETTERS Fidaner, O., Okyay, A. K., Roth, J. E., Schaevitz, R. K., Kuo, Y., Saraswat, K. C., Harris, J. S., Miller, D. A. 2007; 19 (17-20): 1631-1633
  • High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric APPLIED PHYSICS LETTERS Goel, N., Majhi, P., Tsai, W., Warusawithana, M., Schlom, D. G., Santos, M. B., Harris, J. S., Nishi, Y. 2007; 91 (9)

    View details for DOI 10.1063/1.2776846

    View details for Web of Science ID 000249156100134

  • High transmission through ridge nano-apertures on vertical-cavity surface-emitting lasers OPTICS EXPRESS Rao, Z., Hesselink, L., Harris, J. S. 2007; 15 (16): 10427-10438

    Abstract

    We report high-intensity nano-aperture Vertical-Cavity Surface- Emitting Lasers (VCSELs) with sub-100nm near-field spots using ridge apertures. Power transmission efficiency through different ridge apertures, including bowtie, C, H and I-shaped apertures on VCSELs were studied. Significantly higher transmission efficiencies were obtained from the ridge apertures than those from conventional square apertures. Mechanisms for high transmission through the ridge apertures are explained through simulation and waveguide theory. A new quadruple-ridge aperture is proposed and designed via simulation. With the high-intensity and small spot size, VCSELs using these ridge nano-apertures are very promising means to realize applications such as ultrahigh-density near-field optical data storage and ultrahigh-resolution near-field imaging etc.

    View details for Web of Science ID 000248753100057

    View details for PubMedID 19547395

  • Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Harris, J. S., Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Jackrel, D., Pickett, E. R., Sarmiento, T., Goddard, L. L., Lordi, V., Gugov, T. 2007; 244 (8): 2707-2729
  • Evanescent-coupled GaInNAsSb in-line fibre photodetectors IET OPTOELECTRONICS Yang, H., Khalili, A., Wistey, M., Harris, J. S. 2007; 1 (4): 175-177
  • High-intensity bowtie-shaped nano-aperture vertical-cavity surface-emitting laser for near-field optics OPTICS LETTERS Rao, Z., Hesselink, L., Harris, J. S. 2007; 32 (14): 1995-1997

    Abstract

    We report a high-intensity nano-aperture vertical-cavity surface-emitting laser (VCSEL) utilizing a bowtie-shaped aperture. A maximum power of 188 microW is achieved from a 180 nm bowtie aperture at a wavelength of 970 nm. The near-field full width at half-maximum intensity spot size 20 nm away from the bowtie aperture is 64 nm x 66 nm from simulation, and the peak near-field intensity is estimated to be as high as 47 mW/microm(2). This intensity is high enough to realize near-field optical recording, and the small spot size corresponds to storage densities up to 150 Gbits/in(2). The bowtie-aperture VCSEL also enables other applications, such as compact high-intensity probes for ultrahigh-resolution near-field imaging and single molecule fluorescence and spectroscopy.

    View details for Web of Science ID 000248669200013

    View details for PubMedID 17632621

  • Annealing condition optimization and electrical characterization of amorphous LaAlO3/GaAs metal-oxide-semiconductor capacitors APPLIED PHYSICS LETTERS Choi, D., Harris, J. S., Warusawithana, M., Schlom, D. G. 2007; 90 (24)

    View details for DOI 10.1063/1.2748308

    View details for Web of Science ID 000247305400102

  • Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers APPLIED PHYSICS LETTERS Bae, H. P., Bank, S. R., Yuen, H. B., Sarmiento, T., Pickett, E. R., Wistey, M. A., Harris, J. S. 2007; 90 (23)

    View details for DOI 10.1063/1.2746944

    View details for Web of Science ID 000247145500019

  • Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy JOURNAL OF APPLIED PHYSICS Jackrel, D. B., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris, J. S. 2007; 101 (11)

    View details for DOI 10.1063/1.2744490

    View details for Web of Science ID 000247306000174

  • High-intensity C-shaped nanoaperture vertical-cavity surface-emitting laser with controlled polarization APPLIED PHYSICS LETTERS Rao, Z., Matteo, J. A., Hesselink, L., Harris, J. S. 2007; 90 (19)

    View details for DOI 10.1063/1.2737938

    View details for Web of Science ID 000246413400010

  • Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (similar to 80 nm) Si1-xGex step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor applications Oye, M. M., Shahrjerdi, D., Ok, I., Hurst, J. B., Lewis, S. D., Dey, S., Kelly, D. Q., Joshi, S., Mattord, T. J., Yu, X., Wistey, M. A., Harris, J. S., Holmes, A. L., Lee, J. C., Banerjee, S. K. A V S AMER INST PHYSICS. 2007: 1098-1102

    View details for DOI 10.1116/1.2713119

    View details for Web of Science ID 000247551300083

  • Optical modulator on silicon employing germanium quantum wells OPTICS EXPRESS Roth, J. E., Fidaner, O., Schaevitz, R. K., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2007; 15 (9): 5851-5859

    Abstract

    We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers. The peak contrast ratio is 7.3 dB at 1457 nm for a 10 V swing, and exceeds 3 dB from 1441 nm to 1461 nm. The novel side-entry structure employs an asymmetric Fabry-Perot resonator at oblique incidence. Unlike waveguide modulators, the design is insensitive to positional misalignment, maintaining > 3 dB contrast while translating the incident beam 87 mum and 460 mum in orthogonal directions. Since the optical ports are on the substrate edges, the wafer top and bottom are left free for electrical interconnections and thermal management.

    View details for Web of Science ID 000246395000064

    View details for PubMedID 19532843

  • Growth of GaAs with orientation-patterned structures for nonlinear optics Yu, X., Scaccabarozzi, L., Lin, A. C., Fejer, M. M., Harris, J. S. ELSEVIER SCIENCE BV. 2007: 163-167
  • Integrated semiconductor optical sensors for cellular and neural imaging APPLIED OPTICS Levi, O., Lee, T. T., Lee, M. M., Smith, S. J., Harris, J. S. 2007; 46 (10): 1881-1889

    Abstract

    We review integrated optical sensors for functional brain imaging, localized index-of-refraction sensing as part of a lab-on-a-chip, and in vivo continuous monitoring of tumor and cancer stem cells. We present semiconductor-based sensors and imaging systems for these applications. Measured intrinsic optical signals and tissue optics simulations indicate the need for high dynamic range and low dark-current neural sensors. Simulated and measured reflectance spectra from our guided resonance filter demonstrate the capability for index-of-refraction sensing on cellular scales, compatible with integrated biosensors. Finally, we characterized a thermally evaporated emission filter that can be used to improve sensitivity for in vivo fluorescence sensing.

    View details for Web of Science ID 000245290300035

    View details for PubMedID 17356634

  • Conduction band offset for Ga0.62In0.38NxAs0.991-xSb0.009/GaNyAs1-y/GaAs systems with the ground state transition at 1.5-1.65 mu m APPLIED PHYSICS LETTERS Kudrawiec, R., Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., Goddard, L. L., Harris, J. S. 2007; 90 (13)

    View details for DOI 10.1063/1.2716366

    View details for Web of Science ID 000245317100026

  • Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance APPLIED PHYSICS LETTERS Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Misiewicz, J. 2007; 90 (6)

    View details for DOI 10.1063/1.2437729

    View details for Web of Science ID 000244162300019

  • Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Gladysiewicz, M., Misiewicz, J. WILEY-V C H VERLAG GMBH. 2007: 364-372
  • The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance Kudrawiec, R., Yuen, H. B., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S., Motyka, M., Gladysiewicz, M., Misiewicz, J. WILEY-V C H VERLAG GMBH. 2007: 543-546
  • Sensitivity analysis of a photonic crystal structure for index-of-refraction sensing NANOSCALE IMAGING, SPECTROSCOPY, SENSING, AND ACTUATION FOR BIOMEDICAL APPLICATIONS IV Levi, O., Lee, M. M., Zhang, J., Lousse, V., Brueck, S. R., Fan, S., Harris, J. S. 2007; 6447

    View details for DOI 10.1117/12.705670

    View details for Web of Science ID 000245976200016

  • The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects Harris, J., S., Choi, D., Warusawithana, M., Chui, C., O., Chen, J., Tsai, W. 2007
  • GaIn) (NAsSb): MBE growth, heterostructure and nanophotonic devices International J. Nanoscience Harris, J., S. 2007; 3-4 (6): 269-274
  • Terahertz wave generation in orientation-patterned GaAs using resonantly enhanced scheme Vodopyanov, K., L., Schaar, J., K., Kuo, P., S., Fejer, M., M., Yu, X., Harris, J., S. 2007
  • Optical Analogue to Electromagnetically Induced Transparency in Photonic Crystals, Simulation and Experiments Technical Digest OSA 2007 Slow and Fast Light, SWB2 Harris, J., S., Pan, J., Sandhu, S., Huo, Y., Povinelli, M., L., Fejer, M., M. 2007
  • A highly stable evanescently-coupled hybrid fibre semiconductor laser design Khalili, A., Lim, X., H., Bae, H., Harris, J., S. 2007
  • Compact Semiconductor Bioluminescence Bio-sensors Technical Digest Frontiers in Optics, (Optical Society of America), paper JMD5 O'Sullivan, T., Wechselberger, A., Levi, O., Harris, J. 2007
  • Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications Frontiers in Molecular-Beam Epitaxy toward Noverl Devices Harris, J., S., Kudrawiec, R., Yuen, H., B., Bank, S., R., Bae, H., P., Wistey, M., A. edited by Grahn, H., Koch, R., Trampert, A. Wiley VCH, Berlin, Germany. 2007
  • The quantum confined Stark effect in Ge/SiGe quantum wells: An efficient electroabsorption mechanism for silicon-based applications 2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS Roth, J. E., Fidaner, O., Schaevitz, R. K., Edwards, E. H., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2007: 178-180
  • Contactless electroreflectance of GaInNAsSb/GaAs single quantum wells with indium content of 8%-32% JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Yuen, H. B., Motyka, M., Gladysiewicz, M., Misiewicz, J., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, J. S. 2007; 101 (1)

    View details for DOI 10.1063/1.2382721

    View details for Web of Science ID 000243585200024

  • Thermally induced relaxation in GaInNAsSb quantum well structures SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II Pickett, E., Bank, S., Yuen, H., Bae, H., Sarmiento, T., Marshall, A., Harris, J. 2007; 994: 105-110
  • New THz sources for bio-medical imaging NOVEL IN - PLANE SEMICONDUCTOR LASERS IV Harris, J. S., Gu, A., Kim, S. M. 2007; 6485

    View details for DOI 10.1117/12.714266

    View details for Web of Science ID 000246393700022

  • (GaIn)(NAsSb): MBE growth, heterostructure and nanophotonic devices INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NOS 3 AND 4 Harris, J. S. 2007; 6 (3-4): 269-274
  • Optical link on silicon employing Ge/SiGe quantum well structures 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Fidaner, O., Okyay, A. K., Roth, J. E., Scheavitz, R. K., Kuo, Y., Saraswat, K. C., Harris, J. S., Miller, D. A. 2007: 852-853
  • Optical Characterization and Sensitivity Evaluation of Guided-Resonances in Photonic Crystal Slabs for Biosensing Applications 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 Levi, O., Lee, M. M., Zhang, J., Lousse, V., Brueck, S. R., Fan, S., Harris, J. S. 2007: 993-994
  • High-intensity bowtie nano-aperture Vertical-Cavity Surface-Emitting Laser for ultrahigh-density near-field optical data storage OPTICAL DATA STORAGE 2007 Rao, Z., Hesselink, L., Harris, J. S. 2007; 6620

    View details for DOI 10.1117/12.738952

    View details for Web of Science ID 000250199900039

  • Enhanced second-harmonic generation in AlGaAs/AlxOy tightly confining waveguides and resonant cavities OPTICS LETTERS Scaccabarozzi, L., Fejer, M. M., Huo, Y., Fan, S., Yu, X., Harris, J. S. 2006; 31 (24): 3626-3628

    Abstract

    We demonstrate second-harmonic generation (SHG) from sub-micrometer-sized AlGaAs/AlxOy artificially birefringent waveguides. The normalized conversion efficiency is the highest ever reported. We further enhanced the SHG using a waveguide-embedded cavity formed by dichroic mirrors. Resonant enhancements as high as approximately 10x were observed. Such devices could be potentially used as highly efficient, ultracompact frequency converters in integrated photonic circuits.

    View details for Web of Science ID 000242560400022

    View details for PubMedID 17130925

  • Dichroic mirror embedded in a submicrometer waveguide for enhanced resonant nonlinear optical devices OPTICS LETTERS Scaccabarozzi, L., Fejer, M. M., Huo, Y., Fan, S., Yu, X., Harris, J. S. 2006; 31 (22): 3285-3287

    Abstract

    We report the design, fabrication and characterization of novel dichroic mirrors embedded in a tightly confining AlGaAs/Al(x)O(y) waveguide. Reflection at the first-harmonic wavelength as high as 93% is achieved, while high transmission is maintained at the second-harmonic wavelength. The measured cavity spectrum is in excellent agreement with finite-difference time-domain simulations. Such a mirror is essential for achieving resonant enhancement of second-harmonic generation.

    View details for Web of Science ID 000241799700022

    View details for PubMedID 17072398

  • Long-wave IR chemical sensing based on difference frequency generation in orientation-patterned GaAs APPLIED PHYSICS B-LASERS AND OPTICS Bisson, S. E., Kulp, T. J., Levi, O., Harris, J. S., Fejer, M. M. 2006; 85 (2-3): 199-206
  • Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Kuo, Y., Lee, Y. K., Ge, Y., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2006; 12 (6): 1503-1513
  • Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms Kudrawiec, R., Gladysiewicz, M., Motyka, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. R., Harris, J. S. ELSEVIER SCIENCE BV. 2006: 152-157
  • InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition APPLIED PHYSICS LETTERS Goel, N., Majhi, P., Chui, C. O., Tsai, W., Choi, D., Harris, J. S. 2006; 89 (16)

    View details for DOI 10.1063/1.2363959

    View details for Web of Science ID 000241405200124

  • Terahertz-wave generation in quasi-phase-matched GaAs APPLIED PHYSICS LETTERS Vodopyanov, K. L., Fejer, M. M., Yu, X., Harris, J. S., Lee, Y., Hurlbut, W. C., Kozlov, V. G., Bliss, D., Lynch, C. 2006; 89 (14)

    View details for DOI 10.1063/1.2357551

    View details for Web of Science ID 000241056900019

  • InSb and InSb : N multiple quantum dots APPLIED PHYSICS LETTERS Hatami, F., Kim, S. M., Yuen, H. B., Harris, J. S. 2006; 89 (13)

    View details for DOI 10.1063/1.2357546

    View details for Web of Science ID 000240875800115

  • Mid-infrared luminescence of an InNAsSb/InAs single quantum well grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Yuen, H. B., Kim, S. M., Hatami, F., Harris, J. S., Chin, A. H. 2006; 89 (12)

    View details for DOI 10.1063/1.2356102

    View details for Web of Science ID 000240680300041

  • Neural stimulation with a carbon nanotube microelectrode array NANO LETTERS Wang, K., Fishman, H. A., Dai, H., Harris, J. S. 2006; 6 (9): 2043-2048

    Abstract

    We present a novel prototype neural interface using vertically aligned multiwalled carbon nanotube (CNT) pillars as microelectrodes. Functionalized hydrophilic CNT microelectrodes offer a high charge injection limit (1-1.6 mC/cm2) without faradic reactions. The first repeated in vitro stimulation of hippocampal neurons with CNT electrodes is demonstrated. These results suggest that CNTs are capable of providing far safer and more efficacious solutions for neural prostheses than previous metal electrode approaches.

    View details for DOI 10.1021/nl061241t

    View details for Web of Science ID 000240465100037

    View details for PubMedID 16968023

  • Dilute magnetic semiconductors based on InN Ney, A., Rajaram, R., Harris, J. S., Parkin, S. S. TAYLOR & FRANCIS LTD. 2006: 785-791
  • Optoelectronic switches based on diffusive conduction JOURNAL OF APPLIED PHYSICS Demir, H. V., Koklu, F. H., Yairi, M. B., Harris, J. S., Miller, D. A. 2006; 100 (4)

    View details for DOI 10.1063/1.2234818

    View details for Web of Science ID 000240236800008

  • An evanescent-coupling approach to making stable fiber-coupled semiconductor lasers APPLIED PHYSICS LETTERS Khalili, A., Bae, H., Harris, J. S. 2006; 89 (4)

    View details for DOI 10.1063/1.2234591

    View details for Web of Science ID 000239376500005

  • Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes APPLIED PHYSICS LETTERS Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., Moto, A., Harris, J. S. 2006; 88 (24)

    View details for DOI 10.1063/1.2213176

    View details for Web of Science ID 000238314800041

  • Interband transitions in GaN0.02As0.98-xSbx/GaAs (0 < x <= 0.11) single quantum wells studied by contactless electroreflectance spectroscopy PHYSICAL REVIEW B Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, J. S. 2006; 73 (24)
  • Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells APPLIED PHYSICS LETTERS Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., Harris, J. S. 2006; 88 (22)

    View details for DOI 10.1063/1.2208937

    View details for Web of Science ID 000238001900031

  • Band gap discontinuity in Ga0.9In0.1N0.027As0.973-xSbx/GaAs single quantum wells with 0 <= x < 0.06 studied by contactless electroreflectance spectroscopy APPLIED PHYSICS LETTERS Kudrawiec, R., Motyka, M., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., Harris, J. S. 2006; 88 (22)

    View details for DOI 10.1063/1.2208949

    View details for Web of Science ID 000238001900013

  • Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications APPLIED PHYSICS LETTERS Bank, S. R., Yuen, H. B., Bae, H., Wistey, M. A., Harris, J. S. 2006; 88 (22)

    View details for DOI 10.1063/1.2208375

    View details for Web of Science ID 000238001900015

  • The role of antimony on properties of widely varying GaInNAsSb compositions JOURNAL OF APPLIED PHYSICS Yuen, H. B., Bank, S. R., Bae, H., Wistey, M. A., Harris, J. S. 2006; 99 (9)

    View details for DOI 10.1063/1.2191745

    View details for Web of Science ID 000237682900024

  • Integrated photonic switches for nanosecond packet-switched optical wavelength conversion OPTICS EXPRESS Fidaner, O., Demir, H. V., Sabnis, V. A., Zheng, J. F., Harris, J. S., Miller, D. A. 2006; 14 (1): 361-368

    Abstract

    We present a multifunctional photonic switch that monolithically integrates an InGaAsP/InP quantum well electroabsorption modulator and an InGaAs photodiode as a part of an on-chip, InP optoelectronic circuit. The optical multifunctionality of the switch offers many configurations to allow for different optical network functions on a single chip. Here we experimentally demonstrate GHz-range optical wavelength-converting switching with only ~10 mW of absorbed input optical power, electronically controlled packet switching with a reconfiguration time of <2.5 ns, and optically controlled packet switching in <300 ps.

    View details for Web of Science ID 000234538800040

    View details for PubMedID 19503349

  • Integrated biomedical nanosensor using guided resonance in photonic crystal structures NANOBIOPHOTONICS AND BIOMEDICAL APPLICATIONS III Levi, O., Suh, W., Lee, M. M., Zhang, J., Brueck, S. R., Fan, S., Harris, J. S. 2006; 6095

    View details for DOI 10.1117/12.647312

    View details for Web of Science ID 000237699500014

  • A highly stable evanescently-coupled fiber semiconductor laser Khalili, A., Bae, H., Harris, J., S. 2006
  • Low-threshold CW 1.55- mu m GaAs-based lasers Harris, J., S., Bank, S., R., Bae, H., P., Yuen, H., B., Goddard, L., L., Wistey, M., A. 2006
  • A high-intensity nano-aperture vertical-cavity surface-emitting laser with controlled polarization Rao, Z., L., Matteo, J., A., Hesselink, L., Harris, J., S. 2006
  • Self-aligned via and trench for metal contact in III-V semiconductor devices J. Vac. Sci. Technol. Zheng, J., F., Demir, H., V., Sabnis, V., A., Fidaner, O., Harris, J., S., Miller, D., A.B. 2006; 3 (24): 1117-122
  • Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs Electron. Lett. Bank, S., R., Bae, H., Yuen, H., B., Wistey, M., A., Goddard, L., L., Harris, J., S. 2006; 3 (42): 156-7
  • Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions Electron. Lett. Yang, H., Lordi, V., Harris, J., S. 2006; 1 (42): 52-4
  • New light from gallium arsenide: micro-structured GaAs for mid-IR and THz-wave generation Vodopyanov, K., L., Schaar, J., E., Kuo, P., S., Fejer, M., M., Yu, X., Harris, J., S. 2006
  • Ge/SiGe quantum confined Stark effect modulators on silicon Harris, J., S., Kuo, Y., H., Miller, S., A.B. 2006
  • Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs J. Phys.: Con. Mat. Ney, A., Harris, J., S., Parkin, S., S.P. 2006; 17 (18): 4397-406
  • Structural and magnetic properties of Cr and Mn doped InN J. Mag. Magnetic Materials Ney, A., Rajaram, R., Arenholz, E., Harris, J., S., Samant, M., Farrow, R., F.C. 2006; 1 (300): 7-11
  • High-power source of THz radiation based on orientation-patterned GaAs pumped by a fiber laser Optics Express Imeshev, G., Fermann, M., E., Vodopyanov, K., L., Fejer, M., M., Yu, X., Harris, J., S. 2006: 4439-444
  • GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm Electron. Lett. Harris, J., S., Wistey, M., A., Bank, S., R., Bae, H., Yuen, H., B., Pickett, E., R. 2006; 5 (42): 282-3
  • Very Low-Threshold 1.55-μm Dilute-Nitride Lasers Bank, S., R., Bae, H., P., Goddard, L., L., Yuen, H., B., Wistey, M., A., Harris, J., S. 2006
  • Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy J. Vac. Sci. Technol. Harris, J., S., Ptak, A., J., Friedman, D., J., Kurtz, S., Reedy, R., C., Young, M. 2006; 3 (24): 1540-43
  • Monolithic GaInNAsSb vertical cavity surface emitting lasers at 1534 nm Wistey, M., A., Bank, S., R, Bae, H., Yuen, H., B., Goddard, L., L., Harris, J., S. 2006
  • Investigation of nitrogen induced closely coupled Sb based quantum dots for infrared sensors application Kim, S., M., Hatami, F., Yuen, H., B., Harris, J., S. 2006
  • GaAs optical parametric oscillator with a circularly polarized pump Kuo, P., S., Vodopyanov, K., L., Fejer, M., M., Yu, X., Lin, A., C., Harris, J., S. 2006
  • 0.8-3.5 THz source based on fiber-laser pumped orientation-patterned GaAs Harris, J., S., Vodopyanov, K., L., Imeshev, G., Fermann, M., E., Fejer, M., M. 2006
  • Standing-wave Fourier transform interferometer with an HPT IEEE Photon. Techn. Lett. Fu, J., X., Yu, X., Zhang, B., Harris Jr., J., S. 2006; 1 (18): 40-2
  • Guided-resonance in photonic crystal slabs for biosensing applications Levi, O., Suh, W., Lee, M., M., Solgaard, O., Harris, J., S. 2006
  • Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy J. Vac. Sci. Techn. Rajaram, R., Ney, A., Farrow, R., F.C., Parkin, S., S.P., Solomon, G., S., Harris Jr., J., S. 2006; 3 (B24): 1644-8
  • Green emission from InP-GaP quantum-dot light-emitting diodes IEEE Photon. Techn. Lett. Hatami, F., Masselink, W., T., Lordi, V., Harris, J., S. 2006; 18: 895-897
  • Tunable THz source based on frequency conversion in quasi-phase-matched GaAs Vodopyanov, K., L., Schaar, J., Fejer, M., M., Yu, X., Harris, J., S., Lee, Y., S. 2006
  • Temperature and Humidity Dependent Reliability Analysis of RGB LED Chip Fu, J., X., Souri, S., Harris Jr., J., S. 2006
  • Nonlinear optical effects in InxGa(1-x)As quantum systems for saturable absorbers Aldaz, R., I., Wiemer, M., W., Miller, D., A.B., Harris, J., S. 2006
  • Dilute nitride lasers and photodetectors Harris, J., S. 2006
  • Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 µm Solid State Communic. Harris, J., S., Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H., B., Bank, S., R. 2006; 1 (137): 138-141
  • Biomedical terahertz imaging with a quantum cascade laser Appl. Phys. Lett. Kim, S., M., Hatami, F., Harris, J., S., Kurian, A., W., Ford, J., King, D. 2006; 15 (88): 1539031-3
  • Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 mu m SOLID STATE COMMUNICATIONS Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, J. S. 2006; 137 (3): 138-141
  • Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function 2006 28TH ANNUAL INTERNATIONAL CONFERENCE OF THE IEEE ENGINEERING IN MEDICINE AND BIOLOGY SOCIETY, VOLS 1-15 Lee, T. T., Levi, O., Cang, J., Kaneko, M., Stryker, M. P., Smith, S. J., Shenoy, K. V., Harris, J. S. 2006: 2443-2446
  • Colour-tunable light-emitting diodes based on InP/GaP nanostructures Nanotechnology Hatami, F., Masselink, W., T., Harris, J., S. 2006; 15 (17): 3703-06
  • GaInNAsSb solar cells grown by molecular beam epitaxy CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2 Jackrel, D., Ptak, A., Bank, S., Yuen, H., Wistey, M., Friedman, D., Kurtz, S., Harris, J. S. 2006: 783-786
  • Optical parametric generation of a mid-infrared continuum in orientation-patterned GaAs OPTICS LETTERS Kuo, P. S., Vodopyanov, K. L., Fejer, M. M., Simanovskii, D. M., Yu, X., Harris, J. S., Bliss, D., Weyburne, D. 2006; 31 (1): 71-73

    Abstract

    We have generated an ultrabroad mid-infrared continuum by using single-pass optical parametric generation (OPG) in orientation-patterned GaAs (OP-GaAs). The spectrum spans more than an octave, from 4.5 to 10.7 microm, measured 20 dB down from the peak. The 17.5 mm long, 0.5 mm thick, all-epitaxially-grown OP-GaAs sample with a 166.6-microm quasi-phase-matching period was pumped with 3.1-3.3 microm wavelength, 1 ps pulses up to 2 microJ in energy. The OPG threshold was observed at 55 nJ pump energy with the pump polarized along the [111] crystal direction. The slope efficiency near threshold was 51%, and the external conversion efficiency was as high as 15%.

    View details for Web of Science ID 000234181600023

    View details for PubMedID 16419881

  • Germanium electroabsorption devices on silicon for optical interconnects SILICON PHOTONICS Kuo, Y., Miller, D. A., Harris, J. S. 2006; 6125

    View details for DOI 10.1117/12.674733

    View details for Web of Science ID 000237274900009

  • A C-shaped nanoaperture Vertical-Cavity Surface-Emitting Laser for high-density near-field optical data storage VERTICAL-CAVITY SURFACE-EMITTING LASERS X Rao, Z., Matteo, J. A., Hesselink, L., Harris, J. S. 2006; 6132

    View details for DOI 10.1117/12.645083

    View details for Web of Science ID 000237084500016

  • Compact standing-wave Fourier-transform interferometer with harmonic spectral analysis COHERENCE DOMAIN OPTICAL METHODS AND OPTICAL COHERENCE TOMOGRAPHY IN BIOMEDICINE X Fu, J., Yu, X., Zhang, B., Harris, J. S. 2006; 6079

    View details for DOI 10.1117/12.649113

    View details for Web of Science ID 000237132000041

  • Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function. Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Conference Lee, T. T., Levi, O., Cang, J., Kaneko, M., Stryker, M. P., Smith, S. J., Shenoy, K. V., Harris, J. S. 2006; 1: 1025-1028

    Abstract

    Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

    View details for PubMedID 17946016

  • Ge/SiGe quantum-confined stark modulators on silicon 2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Harris, J. S. 2006: 903-904
  • Comparative analysis of bio-medical imaging at 3.7 terahertz with a high power quantum cascade laser 2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Kim, S. M., Hatami, F., Gu, A., Kurian, A. W., Ford, J., Harris, J. S., Scalari, G., Faist, J. 2006: 231-232
  • Bio-medical imaging with a terahertz quantum cascade laser NANOBIOPHOTONICS AND BIOMEDICAL APPLICATIONS III Kim, S. M., Hatami, F., Kurian, A. W., Ford, J., Harris, J. S., Scalari, G., Giovannini, M., Hoyler, N., Faist, J., Harris, G. 2006; 6095

    View details for DOI 10.1117/12.647233

    View details for Web of Science ID 000237699500007

  • Novel on-chip fully monolithic integration of GaAs devices with completely fabricated SiCMOS circuits IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Ma, K., Chen, R., Miller, D. A., Harris, J. S. 2005; 11 (6): 1278-1283
  • Strong quantum-confined Stark effect in germanium quantum-well structures on silicon NATURE Kuo, Y. H., Lee, Y. K., Ge, Y. S., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2005; 437 (7063): 1334-1336

    Abstract

    Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated; but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimetres) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism, which allows modulator structures with only micrometres of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor; such semiconductors often display much weaker optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.

    View details for DOI 10.1038/nature04204

    View details for Web of Science ID 000232829100048

    View details for PubMedID 16251959

  • Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells JOURNAL OF APPLIED PHYSICS Kudrawiec, R., Motyka, M., Misiewicz, J., Yuen, H. B., Bank, S. R., Wistey, M. A., Bae, H. P., Harris, J. S. 2005; 98 (6)

    View details for DOI 10.1063/1.2060940

    View details for Web of Science ID 000232226000033

  • Arsenic surface segregation during in situ doped silicon and Si1-xGex molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH Liu, X., Tang, Q., Harris, J. S., Kamins, T. I. 2005; 281 (2-4): 334-343
  • Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Bank, S. R., Wistey, M. A., Yuen, H. B., Lordi, V., Gambin, V. F., Harris, J. S. 2005; 23 (3): 1320-1323

    View details for DOI 10.1116/1.1878995

    View details for Web of Science ID 000230479600087

  • The opportunities, successes and challenges for GaInNAsSb JOURNAL OF CRYSTAL GROWTH Harris, J. S. 2005; 278 (1-4): 3-17
  • Monolithically integrated semiconductor fluorescence sensor for microfluidic applications SENSORS AND ACTUATORS B-CHEMICAL Thrush, E., Levi, O., Cook, L. J., Deich, J., Kurtz, A., Smith, S. J., Moerner, W. E., Harris, J. S. 2005; 105 (2): 393-399
  • Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance APPLIED PHYSICS LETTERS Kudrawiec, R., Sitarek, P., Misiewicz, J., Bank, S. R., Yuen, H. B., Wistey, M. A., Harris, J. S. 2005; 86 (9)

    View details for DOI 10.1063/1.1873052

    View details for Web of Science ID 000228991600015

  • Conductance fluctuations and partially broken spin symmetries in quantum dots Phys. Rev. B Zumbuhl, D., M., Miller, J., B., Marcus, C., M., Goldhaber-Gordon, D., Harris, J., S., Campman, K. 2005; 8 (72): 81305
  • Reconfigurable magnetologic computing using the spin flop switching of a magnetic random access memory cell Appl. Phys. Lett. Ney, A., Harris, J., S. 2005; 11 (86): 13502-1-3
  • Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance Appl. Phys. Lett. Harris, J., S., Kudrawiec, R., Sitarek, P., Misiewicz, J., Bank, S., R., Yuen, H., B. 2005; 86 (091115-17)
  • Linear electro-optic conversion of sampled voltage signals using a low-temperature-grown GaAs MSM and a multiple quantum well modulato Chin, H., Urata, U., Chen, R., Miller, D., A. B., Ma, K., Harris Jr., J., S 2005
  • Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets Harris, J., S., Yuen, H., B., Kudrawiec, R., Ryczko, K., Bank, S., R., Wistey, M., A. 2005
  • Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy J. Vac. Sci. Techn. B Wistey, M., A., Bank, S., R., Yuen, H., B., Harris, J., S., Oye, M., M., Holmes, A., L. 2005; 3 (23): 460-4
  • Temperature Independence of the Spin Injection Efficiency of a MgO-based Tunnel Spin Injector Appl. Phys. Lett. Salis, G., Wang, R., Jiang, X., Shelby, R., M., Bank, S., R., Harris, J., S. 2005; 87: 2625031-3
  • Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells J. Appl. Phys. Harris, J., S., Kudrawiec, R., Motyka, M., Misiewicz, J., Yuen, H., B., Bank, S., R. 2005; 6 (98): 063527-31
  • MSM-based integrated CMOS wavelength-tunable optical receiver IEEE Photon. Techn. Lett. Chen, R., Chin, H., Miller, D., A. B., Ma, K., Harris, J., S. 2005; 6 (17): 1271-3
  • In situ p-n junctions and gated devices in titanium-silicide nucleated si nanowires Electrochem Solid-State Lett. Tang, Q., Kamins, T., I., Liu, X., Grupp, D., E., Harris, J., S. 2005; 8 (8): G204-8
  • Improved Optical Quality from GaNAsSb in the Dilute Sb Limit J. Appl. Phys. Harris, J., S., Yuen, H., B., Seong, M., J., Kudrawiec, R., Yoon, S., Bank, S., R. 2005; 11 (97): 113510-1-5
  • A single transverse-mode monolithically integrated long vertical-cavity surface-emitting laser IEEE Photon. Techn. Lett. Wiemer, M., W., Aldaz, R., I., Miller, D., A. B., Harris, J., S. 2005; 7 (17): 1366-8
  • MBE grown GaInNAs solar cells for multijunction applications Harris, J., S., Jackrel, D., Yuen, H., Fu, J., Bank, S., Yu, X. 2005
  • Fabrication and characterization of tightly confining AlGaAs waveguides and microcavities for nonlinear optical applications Harris, J., S., Scaccabarozzi, L., Wang, Z., Yu, X., Lee, M., M., Lau, W., T. 2005
  • Extended InGaAs/InGaAs quantum structures for near infrared photodetection beyond 1.9 µm Fu, J., Yu, X., Kuo, Y., H., Harris Jr., J., S. 2005
  • InP based double heterojunction phototransistor with graded emitter-base junction and base-collector junction Fu, J., X., Harris Jr., J., S. 2005
  • Highly stable in-line semiconductor fiber laser Khalili, A., Harris Jr., J., S. 2005
  • Differential Gain and Non-linear Gain Compression of GaInNAsSb/GaAs Lasers at 1.5µm Goddard, L., Bank, S., Wistey, M., Yuen, H., Bae, H., Harris, J., S. 2005
  • Red light-emitting diodes based on InP/GaP quantum dots J. Appl. Phys. Hatami, F., Lordi, V., Harris, J., S., Kostial, H., Masselink, W., T. 2005; 9 (97): 96106-1-3
  • On the temperature sensitivity of 1.5-µm GaInNAsSb lasers IEEE J. Select. Topics Quan. Electron. Bank, S., R., Goddard, L., L., Wistey, M., A., Yuen, H., B., Harris, J., S. 2005; 5 (11): 1089-98
  • Increase in spin injection efficiency of a CoFe/MgO(100) tunnel spin injector with thermal annealing Appl. Phys. Lett. Harris, J., S., Wang, R., Jiang, X., Shelby, R., M., Macfarlane, R., M., Parkin, S., S. P. 2005; 5 (86): 052901-3
  • Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100) Phys. Rev. Lett. Jiang, X., Wang, R., Shelby, R., M., Macfarlane, R., M., Bank, S., R., Harris, J., S. 2005; 5 (94): 056601/1-4
  • Efficient continuous wave second harmonic generation pumped at 1.55 µm in quasi-phase-matched AlGaAs waveguides Optics Express Yu, X., Scaccabarozzi, L., Harris, J., S., Kuo, P., S., Fejer, M., M. 2005; 26 (13): 10742-10753
  • (GaIn)(NAsSb): the challenges for long wavelength communications devices Harris Jr., J., S. 2005
  • Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy J. Vac. Sci. Techn. B Yuen, H., B., Wistey, M., A., Bank, S., R., Bae, H., P., Harris, J., S. 2005; 3 (23): 1328-32
  • Spectral shaping of electrically controlled MSM-based tunable photodetectors IEEE Photon. Techn. Lett. Chen, R., Fu, J., X., Miller, D., A.B., Harris, J., S. 2005; 10 (17): 2158-60
  • Self-aligning planarization and passivation for integration applications in III-V semiconductor devices IEEE Trans Semiconductor Manufacturing Demir, H., V., Zheng, J., F., Sabnis, V., A., Fidaner, O., Hanberg, J., Harris, J., S. 2005; 1 (18): 182-89
  • Protecting wafer surface during plasma ignition using an arsenic cap J. Vac. Sci. Techn. B Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Gugov, T., Harris, J., S. 2005; 3 (23): 1324-7
  • Novel electrically controlled rapidly wavelength selective photodetection using MSMs IEEE J. Selected Topics in Quantum Electron. Chen, R., Miller, D., A. B., Ma, K., Harris, J., S. 2005; 1 (11): 184-89
  • Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 µm J. Vac. Sci. Techn. B Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L., L., Bae, H., P., Harris, J., S. 2005; 3 (23): 1324-27
  • Mn- and Cr-doped InN: A promising diluted magnetic semiconductor material J. Superconductivity Ney, A., Rajaram, R., Farrow, R., F. C., Harris, J., S., Parkin, S., S. P. 2005; 1 (18): 41-4
  • Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides Appl. Phys. Lett. Harris, J., S., Oye, M., M., Wistey, M., A., Reifsnider, J., M., Agarwal, S., Mattord, T., J. 2005; 22 (86): 221902-1-3
  • Intimate monolithic integration of chip-scale photonic circuits IEEE J. Sel. Topics Quant. Electron. Sabnis, V., A., Demir, H., V., Fidaner, O., Zheng, J., F., Harris, J., S., Miller, D., A. B. 2005; 6 (11): 1255-65
  • Growth and magnetism of Cr-doped InN Appl.Phys. Lett. Rajaram, R., Ney, A., Farrow, R., F. C., Solomon, G., Harris Jr., J., S., Parkin, S., S. P. 2005; 6 (87): 1725111-3
  • Effects of growth temperature on the structural and optical properties of 1.55 µm GaInNAsSb quantum wells grown on GaAs Appl. Phys. Lett. Bank, S., R., Yuen, H., B., Wistey, M., A., Lordi, V., Bae, H., P., Harris, J., S. 2005; 2 (87): 21908-1-3
  • Multifunctional integrated photonic switches IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Demir, H. V., Sabnis, V. A., Fidaner, O., Zheng, J. F., Harris, J. S., Miller, D. A. 2005; 11 (1): 86-96
  • High-performance GaInNAsSb/GaAs lasers at 1.5 µm Goddard, L., L., Bank, S., R., Wistey, M., A., Yuen, H., B., Harris Jr., J., S. 2005
  • Fabrication of a carbon nanotube protruding electrode array for a retinal prosthesis Wang, K., Dai, H., Fishman, H., A., Harris Jr., J., S. 2005
  • 1.55µm GaInNAsSb lasers on GaAs Bank, S., Wistey, M., Goddard, L., Yuen, H., Bae, H., Harris Jr., J., S. 2005
  • Recombination, gain, band structure, efficiency, and reliability of 1.5 µm GaInNAsSb/GaAs lasers J. Appl. Phys. Goddard, L., L., Bank, S., R., Wistey, M., A., Yuen, H., B., Rao, Z., Harris Jr., J., S. 2005; 8 (97): 083101-16
  • Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1.5 µm: The energy level structure and the Stokes shift J. Appl. Phys. Harris, J., S., Kudrawiec, R., Yuen, H., B., Ryczko, K., Misiewicz, J., Bank, S., R. 2005; 97: 53515
  • Nearest-neighbor distributions in Ga(1-x)InxNyAs(1-y) and Ga(1-x)InxNyAs(1-y-z)Sbz thin films upon annealing Phys. Rev. B. Lordi, V., Yuen, H., B., Bank, S., R., Wistey, M., A., Harris, J., S., Friedrich, S. 2005; 12 (71): 125309-18
  • Side-coupled fibre semiconductor laser Electron. Lett. Khalili, A., Harris, J., S. 2005; 20 (41): 1128-30
  • Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs J. Vac. Sci. Techn. B Bank, S., R., Wistey, M., A., Yuen, H., B., Lordi, V., Gambin, V., Harris, J., S. 2005; 3 (23): 1320-3
  • Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3-1.55 mu m JOURNAL OF APPLIED PHYSICS Yuen, H. B., Bank, S. R., Wistey, M. A., Harris, J. S., Moto, A. 2004; 96 (11): 6375-6381

    View details for DOI 10.1063/1.1807028

    View details for Web of Science ID 000225300800066

  • Optical parametric oscillation in quasi-phase-matched GaAs OPTICS LETTERS Vodopyanov, K. L., Levi, O., Kuo, P. S., Pinguet, T. J., Harris, J. S., Fejer, M. M., Gerard, B., Becouarn, L., Lallier, E. 2004; 29 (16): 1912-1914

    Abstract

    We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilizes an all-epitaxially-grown orientation-patterned GaAs crystal that is 0.5 mm thick, 5 mm wide, and 11 mm long, with a domain reversal period of 61.2 microm. Tuning either the near-IR pump wavelength between 1.8 and 2 microm or the temperature of the GaAs crystal allows the mid-IR output to be tuned between 2.28 and 9.14 microm, which is limited only by the spectral range of the OPO mirrors. The pump threshold of the singly resonant OPO is 16 microJ for the 6-ns pump pulses, and the photon conversion slope efficiency reaches 54%. We also show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.

    View details for Web of Science ID 000223074600026

    View details for PubMedID 15357357

  • Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Gugov, T., Gambin, V., Wistey, M., Yuen, H., Bank, S., Harris, J. S. 2004; 22 (3): 1588-1592

    View details for DOI 10.1116/1.1650853

    View details for Web of Science ID 000222481400146

  • Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting OPTICS EXPRESS Demir, H. V., Sabnis, V. A., Fidaner, O., Harris, J. S., Miller, D. A., Zheng, J. F. 2004; 12 (2): 310-316

    Abstract

    We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength conversion across 45 nm between 1525 nm and 1570 nm, and dual-wavelength broadcasting over 20 nm between 1530 nm and 1565 nm, spanning the entire C-band with >10dB RF-extinction ratio and using 3.1-6.7 mW absorbed optical power at 1.25 Gb/s.

    View details for Web of Science ID 000188383200011

    View details for PubMedID 19471539

  • Greater than 10(6) optical isolation in integrated optoelectronic fluorescence sensor. Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Conference Thrush, E., Levi, O., Cook, L., Smith, S., Harris, J. 2004; 3: 2080-2081

    Abstract

    Integrated optoelectronic sensors hold much potential for bio-medical applications. Our work focuses on the use of semiconductor lasers, photodetectors and filters to create a monolithically integrated near-infrared fluorescence sensor. Previous research has found that the close integration of these components results in large laser background levels from spontaneous emission emitted from the side of the laser and limits sensor sensitivity. This work presents an improved optical blocking structure between the laser and photodetector which results in greater than 10(6) optical isolation. This level of isolation will allow for sensitive fluorescence detection and shows that optoelectronic components can be successfully integrated for such purposes.

    View details for PubMedID 17272131

  • A broadly tunable high-resolution IR cavity ring-down spectrometer based on difference frequency generation in orientation-patterned GaAs Bisson, S., E., Kulp, T., J., Levi, O., Harris, J., Fejer, M., M. 2004
  • Photoelectronic analog-to-digital conversion: Sampling and quantizing at 100 Gs/s IEEE Trans. Microwave Theory Techn. Harris, J., S., Ioakeimidi, K., Leheny, R., F., Gradinaru, S., Bolton, P., R., Aldana, R. 2004; 1 (53): 336-42
  • Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate Optics Express Aldaz, R., I., Wiemer, M., W., Miller, D., A. B., Harris Jr., J., S. 2004; 17 (12): 3967-71
  • Low-threshold continuous-wave 1.5-µm GaInNAsSb lasers grown on GaAs IEEE J. Quantum Electron. Bank, S., R., Wistey, M., A., Goddard, L., L., Yuen, H., B., Lordi, V., Harris, J., S. 2004; 6 (40): 656-64
  • A new route to zero-barrier metal source/drain MOSFETs IEEE Trans. Nanotechnology Connelly, D., Faulkner, C., Grupp, D., E., Harris, J., S. 2004; 1 (3): 98-104
  • Monolithic integration of GaAs devices with completely fabricated Si CMOS Ma, K., Chen, R., Miller, D., A. B., Harris Jr., J., S. 2004
  • Low threshold, CW, room temperature 1.50 µm GaAs-based lasers Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L., L., Harris Jr., J., S. 2004
  • Integrated semiconductor bio-fluorescence sensor integrated on micro-fluidic platform Thrush, E., Levi, O., Cook, L., J., Harris Jr., J., S., Smith, S., J 2004
  • GaNAs/GaAsSb type II active regions for 1.3-1.5 µm operation Yang, H., Lordi, V., Harris, J., S. 2004
  • Growth of III-V Nitrides by Pulsed Laser Deposition (Optoelectronic Properties of Semiconductors and Superlattices; III-V Nitride Semiconductors: Growth and Substrate Issues Huang, T., F., Harris Jr., J., S. edited by Omar, M., Ian, M., Breach, F. G. 2004
  • Widely tunable Al 2O3-GaAs DBR filters with variable tuning characteristics IEEE J. Selected Topics Quantum Electronics Lin, C., C., Fu, J., X., Harris, J., S. 2004; 3 (10): 614-21
  • Integrated semiconductor vertical-cavity surface-emitting lasers and PIN photodetectors for biomedical fluorescence sensing IEEE J Quantum Electron. Harris, J., S., Thrush, E., Levi, O., Ha, W., Carey, G., Cook, L., J. 2004; 5 (40): 491-8
  • High-speed, optical switching based on diffusive conduction in an optical waveguide with surface-normal optical control J. Appl Phys. Sabnis, V., A., Demir, H., V., Yairi, M., B., Harris Jr., J., S., Miller, D., A. B. 2004; 5 (95): 2258-63
  • High-performance 1.5 µm GalnNAsSb lasers grown on GaAs Electron. Lett. Bank, S., R., Wistey, M., A., Goddard, L., L., Yuen, H., B., Bae, H., P., Harris, J., S. 2004; 19 (40): 1186-7
  • High-frequency modulation characteristics of 1.3-µm InGaAs quantum dot lasers IEEE Photon. Technol. Lett. Kim, S., M., Wang, Y., Keever, M., Harris, J., S. 2004; 2 (16): 377-379
  • Side-coupled in-line fiber-semiconductor laser Khalili, A., Wistey, M., A., Harris Jr., J., S. 2004
  • Novel scalable wavelength-converting crossbar Demir, H., V., Sabnis, V., A., Fidaner, O., Harris Jr., J., S., Miller, D., A. B., Zheng, J., F. 2004
  • Monolithically integrated long vertical cavity surface laser incorporating a concave micromirror on a glass substrate Aldaz, R., I., Wiemer, M., W., Miller, D., A. B., Harris Jr., J., S. 2004
  • GaInNAs(Sb) long wavelength communications lasers Harris, J., S., S., J., S., M., R., Bank, H., A., Wistey 2004
  • Electrically-reconfigurable integrated photonic switches Fidaner, O., Demir, H., V., Sabnis, V., A., Harris Jr., J., S. 2004
  • The temperature sensitivity of GaAs-based 1.5 µm GaInNAsSb lasers Bank, S., R., Goddard, L., L., Wistey, M., A., Yuen, H., B., Harris Jr., J., S. 2004
  • Measurements of intrinsic properties of high power CW single quantum well GaInNAsSb/GaAs lasers at 1.5 µm Goddard, L., L., Bank, S., R., Wistey, M., A., Yuen, H., B., Harris Jr., J., S. 2004
  • GaInNAs and GaInNAsSb Long Wavelength Lasers, Chapter Physics and Applications of Dilute Nitrides Harris Jr., J., S. edited by Buyanova, I., Chen, W. Taylor and Francis, London, U. K.. 2004: 395-433
  • Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches IEEE J. Quantum Electron. Ma, K., Urata, R., Miller, D., A. B., Harris, J., S. 2004; 6 (40): 800-5
  • GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 µm J. Vac. Sci. Technol. B Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Harris, J., S. 2004; 3 (22): 1562-64
  • Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 µm Electron. Lett. Harris, J., S., Gollub, D., Kamp, M., Forchel, A., Seufert, J., Bank, S., R. 2004; 23 (40): 1487-8
  • Comparison of GaNAsSb and GaNAs as Quantum Well Barriers for GaInNAsSb Optoelectronic Devices Operating at 1.3-1.55 µm J. Appl. Phys. Yuen, H., B., Bank, S., R., Wistey, M., A., Harris Jr., J., S., Moto, A. 2004; 11 (96): 6375-81
  • Structural characterization of molecular beam epitaxy grown GaInNAs and GaInNAsSb quantum wells by transmission electron microscopy Gugov, T., Wistey, M., Yuen, H., Bank, S., Harris Jr., J., S. 2004
  • Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 µm Goddard, L., L., Bank, S., R., Wistey, M., S., Yuen, H., B., Bae, H., P., Harris Jr., J., S. 2004
  • Novel planarization and passivation in the integration of III-V semiconductor devices Zheng, J., F., Hanberg, P., J., Demir, H., V., Sabnis, V., A., Fidaner, O., Harris Jr., J., S. 2004
  • Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm Lordi, V., Yuen, H., B., Bank, S., R., Wistey, M., A., Harris Jr., J., S. 2004
  • The Use of Transmission Electron Microscopy (TEM) in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by MBE J. Vac. Sci. Technol. B Gugov, T., Gambin, V., Wistey, M., Yuen, H., Bank, S., Harris Jr., J., S. 2004; 3 (22): 1588-92
  • Multispectral operation of self-assembled InGaAs quantum-dot infrared photodetectors Appl. Phys. Lett. Kim, S., M., Harris, J., S. 2004; 18 (85): 4154-56
  • Laser background characterization in a monolithically integrated bio-fluorescence sensor Harris, J., S., Thrush, E., Levi, O., Cook, L., J., Deich, J., Smith, S., J 2004
  • Tightly confining AlGaAs waveguides and microcavities for optical frequency conversion INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES VIII Scaccabarozzi, L., Wang, Z., Yu, X. J., Lau, W. T., Yanik, M. F., Fan, S. H., Fejer, M. M., Harris, J. S. 2004; 5355: 111-119

    View details for DOI 10.1117/12.532124

    View details for Web of Science ID 000222345000011

  • Scalable wavelength-converting crossbar switches. IEEE Photon. Techn. Lett. Demir, H., V., Sabnis, V., A., Zheng, J., F., Fidaner, O., Harris Jr., J., S., B.Miller, D., A. 2004; 10 (16): 2305-7
  • Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300-1600 nm Appl. Phys. Lett. Lordi, V., Yuen, H., B., Bank, S., R., Harris, J., S. 2004; 6 (85): 902-4
  • Orbital effects of in-plane magnetic fields probed by mesoscopic conductance fluctuations Phys. Rev. B Zumbuhl, D., M., Miller, J., B., Marcus, C., M., Fal'ko, V., I., Jungwirth, T., Harris, J., S. 2004; 12 (69): 121305
  • Optically-controlled electroabsorption modulators for unconstrained wavelength conversion Appl. Phys. Lett. Sabnis, V., A., Demir, H., V., Fidaner, O., Harris Jr., J., S., Miller, D., A. B., Zheng, J., F. 2004; 4 (84): 469-471
  • Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy Appl. Phys. Lett. Ramsteiner, M., Jiang, D., S., Harris, J., S., Ploog, K., H. 2004; 11 (84): 1859-61
  • Fabrication and characterization of a carbon nanotube microelectrode array for retinal prostheses Investigative Ophthalmology & Visual Science 45 Wang, K., Dai, H., Leng, T., Mehenti, N., Z., Harris, J., S., Fishman, H., A. 2004; suppl.2 (45): U379
  • The role and suppression of carrier leakage in 1.5 µm GaInNAsSb/GaAs lasers M., S., R., H., A., Wistey, L., B., Yuen, J., L., Goddard, Harris, S. 2004
  • Progress towards high power 1.5 µm GaInNAsSb/GaAs lasers for Raman amplifiers Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L., L., Harris Jr., J., S. 2004
  • Photodiode-driven quantum-well modulators for C-band wavelength conversion and broadcasting Demir, H., V., Fidaner, O., Sabnis, V., A., Harris, J., S., Miller, D., A. B., Zheng, J., F. 2004
  • Novel electrically controlled rapidly wavelength selective photodetection using MSMs Chen, R., Miller, D., A. B., Ma, K., Harris Jr., J., S. 2004
  • Multi-spectral operation of InGaAs quantum dot infrared photodetectors and infrared sensors applications Kim, S., Harris Jr., J., S. 2004
  • GaInNAsSb/GaNAs VCSELs at 1.46 µm Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Harris Jr., J., S. 2004
  • MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys Dilute Nitride Materials and Devices Harris Jr., J., S. edited by Henini, M. Elsevier, Amsterdam, The Netherlands. 2004: 502-578
  • Long-Wavelength Dilute Nitride-Antimonide Lasers Dilute Nitride Materials and Devices Harris Jr., J., S. edited by Henini, M. Elsevier, Amsterdam, The Netherlands. 2004: 1-92
  • Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 µm J. Vac. Sci. Technol. B Fu, J., X., Bank, S., R., Wistey, M., A, Yuen, H., B., Harris, J., S. 2004; 3 (22): 1463-67
  • Single-phase growth studies of GaP on Si by solid-source MBE J. Vac. Sci. Technol. B Yu, X., Kuo, P., S., Ma, K., Levi, O., Fejer, M., M., Harris Jr., J., S. 2004; 3 (22): 1450-54
  • Multicolor InGaAs quantum-dot infrared photodetectors IEEE Photon. Technol. Lett. Kim, S., M., Harris, J., S. 2004; 11 (16): 2538-40
  • Structural characterization of molecular beam epitaxy grown GaInNAs and GaInNAsSb quantum wells by transmission electron microscopy NEW MATERIALS FOR MICROPHOTONICS Gugov, T., Wistey, M., Yuen, H., Bank, S., Harris, J. S. 2004; 817: 267-272
  • Integrated bio-fluorescence sensor JOURNAL OF CHROMATOGRAPHY A Thrush, E., Levi, O., Ha, W., Wang, K., Smith, S. J., Harris, J. S. 2003; 1013 (1-2): 103-110

    Abstract

    Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.

    View details for DOI 10.1016/S0021-9673(03)01361-X

    View details for Web of Science ID 000185656900012

    View details for PubMedID 14604112

  • Nearest-neighbor configuration in (GaIn)(NAs) probed by X-ray absorption spectroscopy PHYSICAL REVIEW LETTERS Lordi, V., Gambin, V., Friedrich, S., Funk, T., Takizawa, T., Uno, K., Harris, J. S. 2003; 90 (14)

    Abstract

    Ga(1-x)In(x)N(y)As(1-y) is a promising material system for the fabrication of inexpensive "last-mile" optoelectronic components. However, details of its atomic arrangement and the relationship to observed optical properties is not fully known. Particularly, a blueshift of emission wavelength is observed after annealing. In this work, we use x-ray absorption fine structure to study the chemical environment around N atoms in the material before and after annealing. We find that as-grown molecular beam epitaxy material consists of a nearly random distribution of atoms, while postannealed material shows segregation of In toward N. Ab initio simulations show that this short-range ordering creates a more thermodynamically stable alloy and is responsible for blueshifting the emission.

    View details for DOI 10.1103/PhysRevLett.90.145505

    View details for Web of Science ID 000182320100032

    View details for PubMedID 12731929

  • Heavy arsenic doping of silicon by molecular beam epitaxy Liu, X., Tang, Q., Kamins, T. I., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 651-656
  • Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBE Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 662-665
  • Improved dispersion relations for GaAs and applications to nonlinear optics J. Appl. Phys. Harris, J., S., Skauli, T., Kuo, P., S., L.Vodopyanov, K., Pinguet, T., J., Levi, O. 2003; 10 (94): 6447-55
  • Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy Phys. Rev. Lett. Harris, J., S., Lordi, V., Gambin, V., Friedrich, S., Funk, T., Takizawa, T. 2003; 14 (90): 145505
  • High throughput integration of optoeletronics devices for biochip fluorescent detection SPIE-Photonics West, 4982, Microfludics, BioMEMS, and Medical Microsystems Thrush, E., Levi, O., Wang, K., Wistey, M., A., Harris Jr., J., S., Smith, S., J. 2003; 4982: 162-169
  • 1.3~1.55 µm GaInNAsSb lasers Acta Optica Sinica Harris, J., S. 2003; suppl., no.1 (23): 313-14
  • Standing-wave microspectrometer for multiple fluorescence detection Harris, J., S., Bhalotra, S., R., Kung, H., L., Fu, J., Helman, N., C., Levi, O. 2003
  • Novel, optically-controlled optical switch based on intimate integration of a surface-normal photodiode and waveguide electroabsorption modulator for wavelength conversion Demir, H., V., Sabnis, V., A., Fidaner, O., Latif, S., Harris Jr., J., S., Miller, D., A. B. 2003
  • Long wavelength GaInNAs(Sb) in-line fiber photodetector on GaAs Yang, H., Khalili, A., Wistey, M., Bank, S., Yuen, H., Harris, J. 2003
  • Integrated semiconductor fluorescence sensor for portable bio-medical diagnostics Harris, J., S., Thrush, E., Levi, O., Ha, W., Kurtz, A., Hwang, J. 2003
  • Low-threshold CW GaInNAsSb/GaAs laser at 1.49 um Electron. Lett. Bank, S., Wistey, M., Yuen, H., Goddard, L., Ha, W., Harris Jr, J., S. 2003; 20 (39): 1445-6
  • High intensity 1.3 – 1.6 mm luminescence and structural changes on anneal from MBE grown (Ga, In)(N, As, Sb) J. Crystal Growth Harris, J., S., Gambin, V., Lordi, V., Ha, W., Wistey, M., Volz, K. 2003; 1-4 (251): 408-411
  • Low Temperature Growth of GaAs on Si Substrates for Ultra-fast Photoconductive Switches Ma, K., Urata, R., Miller, D., A. B., Harris Jr., James, S. 2003
  • S. R. Bank, M.A. Wistey, H. B. Yuen, L.L. Goddard, J. S. Harris, “Low threshold, CW, room temperature 1.49 µm GaAs-based lasers, Bank, S., R., Wistey, M., A., Yuen, H., B., Goddard, L.L., Harris Jr., J., S. 2003
  • A 100Gs/s Photoelectronic A/D converter Harris, J., S., Ioakeimidi, K., Leheny, R., Gradinaru, S., Ma, K., Aldana, R. 2003
  • 1.5µm GaInNAs(Sb) lasers grown on GaAs by MBE J. Crystal Growth Harris, J., S., Bank, S., Ha, W., Gambin, V., Wistey, M., Yuen, H. 2003; 1-4 (251): 367-371
  • Laser Background Rejection Optimization in Integrated Optoelectronic Fluorescence Sensor Harris, J., S., Thrush, E., Levi, O., Ha, W., Carey, G., Cook, L., J. 2003
  • Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55 um J. Crystal Growth Yu, X., Scaccabarozzi, L., Levi, O., Pinguet, T., J., Fejer, M., M., Harris Jr., J., S. 2003; 251: 794-799
  • Optically-switched dual-diode electroabsorption modulators Integrated Photonics Research, OSA Technical Digest, Optical Society of America, Washington, DC Sabnis, V., A., Demir, H., V., Fidaner, O., Harris Jr., J., S., Miller, D., A. B., Zheng, J., F. 2003: 12-14
  • Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source Virtual J. Nanoscale Science & Techn. Harris, J., S., Jiang, X., Wang, R., van Dijken, S., Shelby, R., Macfarlane, R. 2003; 1 (8)
  • Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source Phys. Rev. Lett. Harris, J., S., Jiang, X., Wang, R., van Dijken, S., Shelby, R., Macfarlane, R. 2003; 90: 256603
  • Monolithic, GaInNAsSb VCSELs at 1.46 µm on GaAs by MBE Electron. Lett. Wistey, M., A., Bank, S., R., Yuen, H., B., Goddard, L., L., Harris, J., S. 2003; 25 (39): 1822-3
  • GaInNAsSb long wavelength lasers on GaAs Harris Jr., J., S. 2003
  • Standing-wave microsensor for adaptive analysis of spectral coherence Harris, J., S., Bhalotra, S., R., Kung, H., L., Fu, J., Helman, N., C., Levi, O. 2003
  • GaInNAsSb based long-wavelength lasers Harris Jr., J., S. 2003
  • Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS IEEE J. Lightwave Techn. Harris, J., S., Urata, R., Nathawad, Y., L., Takahashi, R., Ma, K., Miller, D., A. B. 2003; 12 (21): 3104-15
  • Twinning in TiSi2-island catalyzed Si nanowires grown by gas-source molecular-beam epitaxy APPLIED PHYSICS LETTERS Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. 2002; 81 (13): 2451-2453

    View details for DOI 10.1063/1.1509096

    View details for Web of Science ID 000178037600045

  • Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates Kamins, T. I., Williams, R. S., Hesjedal, T., Harris, J. S. ELSEVIER SCIENCE BV. 2002: 995-998
  • Ga(A,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy Appl. Phys. Lett. Krispin, P., Gambin, V., Harris, J., S., Ploog, K., H. 2002; 21 (81): 3987-3989
  • A 1.5 µm GaInNAs(Sb) laser grown on GaAs by MBE Harris, J., S., Ha, W., Gambin, V., Bank, S., Wistey, M., Yuen, H. 2002
  • Measurement of nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second harmonic generation Opt. Lett. Harris, J., S., Skauli, T., Vodopyanov, K., L., Pinguet, T., J., Schober, A., Levi, O. 2002; 27: 628-630
  • Difference-frequency generation of 8µm radiation in orientation-patterned GaAs crystal Opt. Lett. Levi, O., Pinguet, T., J., Skauli, T., Eyres, L., A., Parameswaran, K., R., Harris Jr., J., S. 2002; 23 (27): 2091—2093
  • Integrated semiconductor fluorescent detection system for biochip and biomedical applications Thrush, E., Levi, O., Wang, K., Wistey, M., Harris, J., S., Smith, S., J. 2002
  • Standing-wave Fourier transform spectrometer based on integrated MEMS mirror and thin-film photodetector IEEE J. Select. Topics Quantum Elect. Kung, H., L., Bhalotra, S., R., Mansell, J., D., Miller, D., A. B., Harris, J., S. 2002; 1 (8): 98-105
  • Electron traps in MBE Ga(A,N) layers grown by molecular beam epitaxy Appl. Phys. Lett. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2002; 12 (80): 2120-2122
  • Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM IEEE Photon. Techn. Lett. Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris, J., S. 2002; 5 (15): 724-6
  • Long-wavelength GaInNAs(Sb) lasers on GaAs IEEE J. Quant. Electron. Harris, J., S., Ha, W., Gambin, V., Bank, S., Wistey, M., Yuen, H. 2002; 38: 1260 –1267
  • GaInNAsSb for 1.3-1.6µm long wavelength lasers grown by molecular beam epitaxy IEEE J. Select Topics Quant. Electron Harris, J., S., Gambin, V., Ha, W., Wistey, M., Bank, S., Yuen, H. 2002; 4 (8): 795-800
  • Thermo-optic characterization of GaAs for quasi-phase-matched nonlinear-optical applications Harris, J., S., Skauli, T., Kuo, P., S., Levi, O., Vodopyanov, K., L., Pinguet, T. 2002
  • Integrated semiconductor fluorescent detection system for biochip and biomedical applications Thrush, E., Levi, O., Wang, K., Harris Jr., J., S., Smith, S., J. 2002
  • Examination of N incorporation into GaInNAs Lordi, V., Gambin, V., Ha, W., Bank, S., Harris, J. 2002
  • Optomechanical Model of Surface Micromachined Tunable Optoelectonic Devices IEEE J. Select. Topics Quantum Elect. Lin, C., C., Martin, W., A., Harris Jr., J., S. 2002; 1 (8): 80-87
  • Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers Electron. Lett. Harris, J., S., Ha, W., Gambin, V., Wistey, M., Bank, S., Yuen, H. 2002: 277-278
  • Ultrafast sampling using low temperature grown GaAs MSM switches integrated with CMOS amplifier for photonic A/D conversion Urata, R., Nathawad, L., Y., Ma, K., Takabashi, R., Miller, D., A. B., Wooley, B., A. 2002
  • Ti-Island-Catalyzed Si Nanowire Growth by Gas-Source MBE: Morphology and Twinning Tang, Q., Liu, X., Kamins, T., I., Solomon, G., S., Harris Jr., J., S. 2002
  • Differential optical remoting of ultrafast charge packets using self-linearized modulation Chin, H., Keeler, G., A., Helman, N., C., Wistey, M., Miller, D., A. B., Harris Jr., J., S. 2002
  • Continuously tunable Mid-IR Frequency Generation in Orientation Patterned GaAs Harris, J., S., Levi, O., Skauli, T., Pinguet, T., Vodopyanov, K., L., Kuo, P., S. 2002
  • Long Wavelength GaInNAs(Sb) Lasers on GaAs Ha, W., Harris, J., S. 2002
  • Highly efficient SHG in all-epitaxial quasi-phase-matched GaAs Harris, J., S., Vodopyanov, K., L., Skauli, T., Pinguet, T., J., Schober, A., Levi, O. 2002
  • High Efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Diode Lasers Ha, W., Gambin, V., Bank, S., Wistey, M., Kim, S., Harris Jr., J., S. 2002
  • Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4µm IEEE Photon. Technol. Lett. Ha, W., Gambin, V., Wistey, M., Bank, S., Kim, S., Harris Jr., J., S. 2002; 5 (14): 591-593
  • GaInNAs long wavelength lasers: Progress and Challenges Semicond. Sci. Techn. Harris Jr., J., S. 2002; 8 (17): 880-891
  • GaInNAs, a new material for long wavelength VCSELs JOURNAL OF THE KOREAN PHYSICAL SOCIETY Harris, J. S. 2001; 39: S306-S312
  • Decoherence in nearly isolated quantum dots PHYSICAL REVIEW LETTERS Folk, J. A., Marcus, C. M., Harris, J. S. 2001; 87 (20)

    Abstract

    Decoherence in nearly isolated GaAs quantum dots is investigated using the change in the average Coulomb blockade peak height when time-reversal symmetry is broken. The normalized change in the average peak height approaches the predicted universal value of 1/4 at temperatures well below the single-particle level spacing, T < Delta, but is greatly suppressed for T > Delta, suggesting that inelastic scattering or other dephasing mechanisms dominate in this regime.

    View details for DOI 10.1103/PhysRevLett.87.206802

    View details for Web of Science ID 000172182900043

    View details for PubMedID 11690504

  • All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion APPLIED PHYSICS LETTERS Eyres, L. A., Tourreau, P. J., Pinguet, T. J., Ebert, C. B., Harris, J. S., Fejer, M. M., Becouarn, L., Gerard, B., Lallier, E. 2001; 79 (7): 904-906
  • Spin degeneracy and conductance fluctuations in open quantum dots PHYSICAL REVIEW LETTERS Folk, J. A., Patel, S. R., Birnbaum, K. M., Marcus, C. M., Duruoz, C. I., Harris, J. S. 2001; 86 (10): 2102-2105

    Abstract

    The dependence of conductance fluctuations on parallel magnetic field is used as a probe of spin degeneracy in open GaAs quantum dots. The variance of fluctuations at high parallel field is reduced from the low-field variance (with broken time-reversal symmetry) by factors ranging from roughly 2 in a 1 microm (2) dot to greater than 4 in 8 microm (2) dots. The factor of 2 is expected for Zeeman splitting of spin-degenerate channels. A possible explanation for the larger suppression based on field-dependent spin-orbit scattering is proposed.

    View details for Web of Science ID 000167259900048

    View details for PubMedID 11289865

  • Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms JOURNAL OF APPLIED PHYSICS Kamins, T. I., Williams, R. S., Basile, D. P., Hesjedal, T., Harris, J. S. 2001; 89 (2): 1008-1016
  • Use of angle resolved X-Ray Photoelectron Spectroscopy for determination of depth and thickness of the different layers in a layer structure J. Vac. Sci. Technol. Spruytte, S., Coldren, C., Harris, J., Pantelidis, D., Lee, H., J., Bravman, J. 2001; 2 (19): 603-608
  • High-speed, dual-function vertical cavity multiple quantum well modulators and photodetectors for optical interconnects Optical Engr. Liu, H., Lin, C., C., Harris, J., S. 2001; 7 (40): 1186-1191
  • GaInNAs long wavelength vertical cavity lasers Technical Digest. CLEO/Pacific Rim Larson, M., C., Coldren, C., C., Spruytte, S., G., Petersen, H., E., Garrett, H., E, Harris, J., S. 2001: 594-5
  • Opto-mechanical model of surface micromachined tunable optoelectronic devices Lin, C., C., Martin, W., A., Harris Jr., J., S. 2001
  • Mid-infrared generation by difference frequency mixing in orientation-patterned GaAs Harris, J., S., Levi, O., Pinguet, T., Skauli, T., Eyres, L., A., Scaccabarozzi, L. 2001
  • Nitrogen incorporation in Group III-Nitride Arsenide materials grown by elemental source MBE J. Crystal Growth Harris, J., S., Spruytte, S., G., Larson, M., C., Wampler, W., Coldren, C., W., Petersen, E., H 2001; 227: 506-515
  • Incorporation of Nitrogen in Nitride-Arsenides: Origin of improved Luminescence Efficiency after Anneal J. Appl. Phys. Harris, J., S., Spruytte, S., Wampler, W., Krispin, P., Coldren, C., Larson, M. 2001; 8 (89): 4401-4406
  • Deep-level defects in MBE grown Ga(A,N) layers Physica B Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2001; 308: 870-873
  • Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy J. Appl. Phys. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2001; 5 (90): 2405-2410
  • High-speed sample and hold using low-temperature-grown GaAs MSM switches for photonic A/D conversion Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris Jr., J., S. 2001
  • Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion IEEE Photon. Technol. Lett. Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris, J., S. 2001; 7 (13): 717-719
  • Widely Tunable Micromachined Optical Filter with Adjustable Tuning Characteristics Lin, C., C., Fu, J., Harris Jr., J., S. 2001
  • Tunable mid-IR generation by difference-frequency mixing in orientation-patterned GaAs Harris, J., S., Levi, O., Skauli, T., Pinguet, T., J., Eyres, L., A., Scaccabarozzi, L. 2001
  • GaInNAs material properties for long wavelength opto-electronic devices Gambin, V., Ha, W., Wistey, M., Kim, S., Harris Jr., J., S. 2001
  • Characterization of 0.5 mm Thick films of orientation-patterned GaAs for nonlinear optical applications Harris, J., S., Pinguet, T., Skauli, T., Levi, O., Vodopyanov, K., Eyres, L., A. 2001
  • Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model J. Appl. Phys. Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris Jr., J., S. 2001; 5 (90): 2358-2369
  • Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy J. Appl. Phys. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2001; 11 (89): 6294-6301
  • Second harmonic generation in thick orientation-patterned GaAs Harris, J., S., Skauli, T., Vodopyanov, K., Pinguet, T., W., Levi, O., Eyres, L., A. 2001
  • Long wavelength GaInNAs ridge waveguide lasers with GaNAs barriers Ha, W., Gambin, V., Wistey, M., Bank, S., Kim, S., Harris Jr., J., S. 2001
  • 1.3 micron opto-electronic devices on GaAs using group III-Nitride-Arsenides Spruytte, S., G., Wistey, M., A., Larson, M., C., Coldren, C., W., Garrett, H., Harris, J., S. 2001
  • Decoherence in nearly isolated quantum dots Phys. Rev. Lett. Folk, J., A., Marcus, C., M., Harris, J., S. 2001; 20 (87): 6802-6804
  • Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model J. Crystal Growth Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris, J., S. 2001; 1-2 (222): 29-37
  • Second harmonic generation in orientation-patterned AlGaAs waveguides pumped at 1.55 microns Harris, J., S., Pinguet, T., Scaccabarozzi, L., Levi, O., Skauli, T., Eyres, L., A. 2001
  • Observation of Wavelength-Converting Optical Switching at 2.5 GHz in a Surface Normal Illuminated Waveguide Sabnis, V., A., Demir, H., V., Yairi, M., Miller, D., A.B., Harris Jr., J., S. 2001
  • High efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Laser diode operating out to 1.4µm Ha, W., Gambin, V., Wistey, M., Kim, S., Harris Jr., J. 2001
  • Use of a dielectric stack as a one-dimensional photonic crystal for wavelength demultiplexing by beam shifting OPTICS LETTERS Nelson, B. E., Gerken, M., Miller, D. A., Piestun, R., Lin, C. C., Harris, J. S. 2000; 25 (20): 1502-1504

    Abstract

    We demonstrate the use of a 30-period dielectric stack structure as a highly dispersive device to spatially separate two beams with a 4-nm wavelength difference by more than their beam width. Unlike previous devices, our structure is simple to fabricate and relatively compact. We discuss possible applications of our device within wavelength-division multiplexing systems.

    View details for Web of Science ID 000089834900004

    View details for PubMedID 18066259

  • Narrow-band light emission in semiconductor-fibre asymmetric waveguide coupler ELECTRONICS LETTERS Mao, E., Yankelevich, D. R., Lin, C. C., Solgaard, O., Knoesen, A., Harris, J. S. 2000; 36 (16): 1378-1379
  • Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process JOURNAL OF APPLIED PHYSICS Okada, Y., Iuchi, Y., Kawabe, M., Harris, J. S. 2000; 88 (2): 1136-1140
  • Wavelength-selective semiconductor in-line fibre photodetectors ELECTRONICS LETTERS Mao, E., Yankelevich, D. R., Lin, C. C., Solgaard, O., Knoesen, A., Harris, J. S. 2000; 36 (6): 515-516
  • Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements J. Appl. Phys. Krispin, P., Spruytte, S., G., Harris, J., S., Ploog, K., H. 2000; 7 (88): 4153-4158
  • Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern Appl. Phys. Lett. Kung, H., L., Miller, D., A. B., Atanackovic, P., Lin, C., C., Harris Jr., J., S., Carraresi, L. 2000; 22 (76): 3185-3187
  • Thick (200 mu m) orientation-patterned GaAs for bulk quasi-phase-matched nonlinear frequency conversion Tech. Digest CLEO, TOPS, San Francisco, CA Eyres, L., A., Tourreau, P., J., Pinguet, T., J., Ebert, C., B., Harris, J., S., Fejer, M., M. 2000; 39
  • In-line fiber evanescent field electrooptic modulators J. Nonlinear Optical Phys. Materials Arft, G., Yankelevich, D., R., Knoesen, A., Mao, E., Harris Jr., J., S. 2000; 1 (9): 79-94
  • Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process Jpn. J. Appl. Phys. Gotoh, Y., Matsumoto, K., Bubanja, B., Vazquez, F., Maeda, T., Harris, J., S. 2000; 4B (39): 2334-2337
  • Analysis of unstable two-phase region in wurtzite Group III nitride ternary alloy using modified valence force field model Jpn. J. Appl. Phys. Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris, J., S. 2000; 9A (39): 5057-5062
  • 1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions Electron. Lett. Coldren, C., W., Larson, M., C., Spruytte, S., G., Harris Jr., J., S. 2000; 11 (36): 951-952
  • MBE growth of nitride-arsenide materials for long wavelength opto-electronics Spruytte, S. G., Coldren, C. W., Marshall, A. F., Larson, M. C., Harris, J. S. MATERIALS RESEARCH SOC. 2000: U407-U412
  • All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion Eyres, L., A., Tourreau, P., J., Pinguet, T., J., Ebert, C., B., Harris, J., S., Fejer, M., M. 2000
  • Quasi-phasematched frequency conversion in thick all-epitaxial, orientation-patterned GaAs films Eyres, L., A., Tourreau, P., J., Pinguet, T., J., Ebert, C., B., Harris, J., S., Fejer, M., M. 2000
  • Modeling of MEMS tunable optoelectronic device mirror Lin, C., C., Martin, W., A., Harris Jr., J., S., Chan, E. 2000
  • Wavelength demultiplexing by beam shifting using a dielectric stack as a one-dimensional photonic crystal Nelson, B., E., Gerken, M., Miller, D., A. B., Piestun, R., Lin, C., C., Harris Jr., J., S. 2000
  • Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics Spruytte, S., G., Larson, M., C., Wampler, W., Coldren, C., W., Harris Jr., J., S. 2000
  • Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model J. Appl. Phys. Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris Jr., J., S. 2000; 2 (88): 1104-1110
  • Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers IEEE Photon. Techn.Lett. Larson, M., C., Coldren, C., W., Spruytte, S., G., Petersen, H., E., Harris, J., S. 2000; 12 (12): 1598-1600
  • Compositional Evolution and Structural Changes during Anneal of Group III-Nitride-arsenide Alloys Spruytte, S., G., Coldren, C., W., Marshall, A., F., Harris, J., S. 2000
  • Vertical Cavity Modulator for Optical Interconnection and its High Speed Performance Liu, H., Lin, C., C., Harris Jr., J., S. 2000
  • A multiple-quantum-well GaAs/AlGaAs in-line fiber intensity modulator Mao, E., Yankelevich, D., R., Coldren, C., W., Solgaard, O., Knoesen, A., Harris Jr., J., S. 2000
  • Tunable long wavelength vertical cavity lasers: the engine of next generation optical networks IEEE/LEOS Special Millenium Issue, IEEE J. Sel. Top. Quan. Elect. Harris Jr., J., S. 2000; 6: 1145-1160
  • Room-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat alpha-alumina substrate Appl. Phys. Lett. Matsumoto, K., Gotoh, Y., Maeda, T., Dagata, J., A., Harris Jr., J., S. 2000; 2 (76): 239-241
  • Low threshold current continuous-wave GaInNAs/GaAs VCSELs Larson, M., C., Coldren, C., W., Spruytte, S., G., Petersen, H., E., Harris, J., S. 2000
  • Narrow-band light emission in a semiconductor-fiber asymmetric waveguide coupler Mao, E., Lin, C., C., Solgaard, O., Harris, J., S. 2000
  • Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE) Spruytte, S., G., Coldren, C., W., Larson, M., C., Harris, J., S. 2000
  • Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period Yairi, M., B., Demir, H., V., Coldren, C., W., Harris, J., S., Miller, D., A. B. 2000
  • Pulsed 25-108 degrees C operation of GaInNAs multiple quantum well vertical cavity lasers Tech. Digest CLEO , TOPS, San Francisco, CA Coldren, C., W., Larson, M., C., Spruytte, S., G., Garrett, H., E., Harris Jr., J., S. 2000; 39: 229-230
  • Optical gain and collector current characteristics of resonant-cavity phototransistors Appl. Phys. Lett. Lin, C., C., Martin, W., Harris, J., S., Sugihwo, F. 2000; 9 (76): 1188-1190
  • Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy J. Vac. Sci. Technol. B Coldren, C., W., Spruytte, S., G., Harris Jr., J., S., Larson, M., C. 2000; 3 (18): 1480-1483
  • Frequency locking of micromachined tunable VCSELs to external wavelength selective filters Digest LEOS Summer Topical Meeting Optical Sensing in Semiconductor Manufacturing, Aventura, FL Martin, W., A, Lin, C., C., Sugihwo, F., Harris Jr., J., S. 2000
  • Low-temperature saturation of the dephasing time and effects of microwave radiation on open quantum dots PHYSICAL REVIEW LETTERS Huibers, A. G., Folk, J. A., Patel, S. R., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1999; 83 (24): 5090-5093
  • Strain directed assembly of nanoparticle arrays within a semiconductor JOURNAL OF NANOPARTICLE RESEARCH Hung, C., Marshall, A. F., Kim, D., Nix, W. D., Harris, J. S., Kiehl, R. A. 1999; 1 (3): 329-347
  • Size stabilization of arsenic precipitates in nonstoichiometric GaAs-based compounds APPLIED PHYSICS LETTERS Hung, C. Y., Harris, J. S., Marshall, A. F., Kiehl, R. A. 1999; 75 (7): 917-919
  • Coulomb blockade fluctuations in strongly coupled quantum dots PHYSICAL REVIEW LETTERS Maurer, S. M., Patel, S. R., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1999; 83 (7): 1403-1406
  • High-speed, optically controlled surface-normal optical switch based on diffusive conduction APPLIED PHYSICS LETTERS Yairi, M. B., Coldren, C. W., Miller, D. A., Harris, J. S. 1999; 75 (5): 597-599
  • GaAs AlGaAs multiple-quantum-well in-line fiber intensity modulator APPLIED PHYSICS LETTERS Mao, E., Coldren, C. W., Harris, J. S., Yankelevich, D. R., Solgaard, O., Knoesen, A. 1999; 75 (3): 310-312
  • Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition JOURNAL OF CRYSTAL GROWTH HUANG, T. F., Marshall, A., Spruytte, S., Harris, J. S. 1999; 200 (3-4): 362-367
  • An AlGaAs/GaAs tunnel diode integrated with nanometer-scale atomic force microscope tip-induced oxides JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS Okada, Y., Iuchi, Y., Kawabe, M., Harris, J. S. 1999; 38 (2B): L160-L162
  • Group III-nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy Coldren, C., W., Spruytte, S., G., Harris, J., S., Larson, M., C. 1999
  • Realization of logically labeled effective pure states for bulk quantum computation Phys. Rev. Lett. Harris, J., S., Vandersypen, L., M. K., Yannoni, C., S., Sherwood, M., H., Chuang, I., L. 1999; 83: 3085
  • Excess noise in sub-micron silicon FET: characterization, prediction and control Franca-Neto, L., M., Harris, J., S. 1999
  • Scanned potential microscopy of edge and bulk currents in the quantum Hall regime Phys. Rev B Harris, J., S., McCormick, K., L., Woodside, M., T., Huang, M., Wu, M., S., McEuen, P., L. 1999; 7 (59): 4654-4657
  • Vertical cavity modulator for optical interconnection and its high speed performance Liu, H., Lin, C., C., Harris Jr., J., S. 1999
  • Micromachined tunable optoelectronic devices for spectroscopic applications Harris Jr., J., S., Lin, C., C., Martin, W., Sugihwo, F., Larson, M., Paldus, B. 1999
  • GaAs/AlGaAs narrow-bandwidth in-line fiber filter Mao, E., Coldren, C., W., Harris Jr., J., S., Yankelevich, D., R., Solgaard, O., Knoesen, A. 1999
  • Demonstration of second harmonic generation in all-epitaxially grown orientation-patterned AlGaAs waveguides Eyres, L., A., Ebert, C., B., Tourreau, P., J., Harris, J., S., Fejer, M., M. 1999
  • GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique Internl. Symp. Compound Semiconductors Okada, Y., Iuchi, Kawabe, M., Harris Jr., J., S. Institute of Physics Publishing. 1999: 337-340
  • GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique Okada, Y., Iuchi, Y., Kawabe, M., Harris Jr., J., S. 1999
  • Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlattice J. Cryst. Growth Solomon, G., S., Komarov, S., Harris Jr., J., S. 1999; 202: 1190-1193
  • Metal-based room-temperature operating single electron devices using scanning probe oxidation J. J. Appl. Phys. Matsumoto, K., Gotoh, Y., Maeda, T., Dagata, J., A., Harris Jr., J., S. 1999; 1B (38): 477-479
  • MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy J. Crystal Growth Ebert, C., B., Eyres, L., A., Fejer, M., M., Harris Jr., J., S. 1999; 202: 187-193
  • Room temperature single electron transistor by AFM nano-oxidation process-coincidence in experimental and theoretical results Matsumoto, K., Gotoh, Y., Maeda, T., Harris, J., S. 1999
  • Optically-controlled optical gate using a double diode structure Yairi, M., B., Demir, H., V., Coldren, C., W., Miller, D., A. B., Harris Jr., J., S. 1999
  • MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics Spruytte, S., G., Coldren, C., W., Marshall, A., F., Larson, M., C., Harris, J., S. 1999
  • Mesoscopic Coulomb blockade in one-channel quantum dots PHYSICAL REVIEW LETTERS Cronenwett, S. M., Maurer, S. M., Patel, S. R., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1998; 81 (26): 5904-5907
  • Changing the electronic spectrum of a quantum dot by adding electrons PHYSICAL REVIEW LETTERS Patel, S. R., Stewart, D. R., Marcus, C. M., Gokcedag, M., Alhassid, Y., Stone, A. D., Duruoz, C. I., Harris, J. S. 1998; 81 (26): 5900-5903
  • Distributions of the conductance and its parametric derivatives in quantum dots PHYSICAL REVIEW LETTERS Huibers, A. G., Patel, S. R., Marcus, C. M., Brouwer, P. W., Duruoz, C. I., Harris, J. S. 1998; 81 (9): 1917-1920
  • Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers APPLIED PHYSICS LETTERS Hung, C. Y., Harris, J. S., Marshall, A. F., Kiehl, R. A. 1998; 73 (3): 330-332
  • Statistics of Coulomb blockade peak spacings PHYSICAL REVIEW LETTERS Patel, S. R., Cronenwett, S. M., Stewart, D. R., Huibers, A. G., Marcus, C. M., Duruoz, C. I., Harris, J. S., Campman, K., Gossard, A. C. 1998; 80 (20): 4522-4525
  • Cavity-locked ring-down spectroscopy JOURNAL OF APPLIED PHYSICS Paldus, B. A., Harb, C. C., Spence, T. G., Wilke, B., Xie, J., Harris, J. S., Zare, R. N. 1998; 83 (8): 3991-3997
  • Nanoscale oxidation of GaAs-based semiconductors using atomic force microscope JOURNAL OF APPLIED PHYSICS Okada, Y., Amano, S., Kawabe, M., Shimbo, B. N., Harris, J. S. 1998; 83 (4): 1844-1847
  • Atomic force microscope nanoscale lithography for single-electron device applications COMPOUND SEMICONDUCTORS 1997 Okada, Y., Amano, S., Kawabe, M., Shimbo, B. N., Harris, J. S. 1998; 156: 577-580
  • Near-Infrared Cavity Ringdown Spectroscopy of Water Vapor in an Atmospheric Flame Chem. Phys. Lett. Harris, J., S., Xie, J., Paldus, B., A., Wahl, E., H., Owano, T., G., Kruger, C., H. 1998; 5-6 (284): 387-395
  • AlGaAs/GaAs Tunneling Diode Integrated with nanometre-scale Oxides Patterned by Atomic Force Microscope Electron. Lett. Okada, Y., Amano, S., Iuchi, Y., Kawabe, M., Harris Jr., J., S. 1998; 34: 12, 1262-1263
  • Advances in CW cavity ring-down spectroscopy Technical Digest International Quantum Electronics Conference Paldus, A., Spence, T., G., Harb, C., C., Willke, B., Levenson, M., D., Harris Jr., J., S. 1998: 79
  • MBE growth of laterally antiphase-patterned GaAs films using thin Ge layers for waveguide mixing Eyres, A., Ebert, C., B., Fejer, M., M., Harris Jr., J., S. 1998
  • In-line fiber-optic filter using GaAs ARROW waveguide Mao, E., Coldren, C., Harris Jr., J., S., Yankelevich, D., Solgaard, O., Knoesen, A. 1998
  • Vapor Phase Epitaxy Growth of GaN on Pulsed Laser Deposited ZnO Buffer Layer J. Crys. Growth Harris, J., S., Ueda, T., Huang, T., F., Spruytte, S., Lee, H., Yuri, M. 1998; 3-4 (187): 340-346
  • Scanned potential microscopy of a two-dimensional electron gas Physica B McCormick, K., L., Woodside, M., T., Huang, M., McEuen, P., L., Duruöz, C., I., Harris Jr., J., S. 1998; 251: 79-83
  • Room Temperature Coulomb Oscillation and Memory Effect for Single Electron Memory made by Pulse-Mode AFM Nano-oxidation Process IEDM, San Francisco. Matsumoto, K., Gotoh, Y., Maeda, T., Dagata, J., A., Harris, J., S. 1998
  • Micromachined Tunable Vertical-Cavity Lasers as Wavelength-Selective Tunable Photodetectors Sugihwo, F., Lin, C., C., Bouteiller, J., C., Larson, M., Harris Jr., J., S. 1998
  • Calculation of Unstable Mixing Region in Wurtzite InGaN Harris, J., S., Takayama, T., Ueda, T., Ishida, M., Yuri, M., Itoh, K. 1998
  • Simultaneous Optimization of Membrane Reflectance and Tuning Voltage for Tunable Vertical Cavity Lasers Appl. Phys. Lett. Sugihwo, F., Larson, M., Harris Jr., J., S. 1998; 1 (72): 10-12
  • Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy Chem Phys. Lett. Levenson, M., D., Paldus, B., A., Spence, T., G., Harb, C., C., Harris Jr., J., S., Zare, R., N. 1998; 290 (4-6): 335-340
  • Growth of epitaxial AlxGa1-xN films by pulsed laser deposition App. Phys. Lett. Huang, T., F., Harris Jr., J., S. 1998; 10 (72): 1158-1160
  • Increased surface ordering of InAs island arrays using a multidot column subsurface structure Komarov, S., A., Solomon, G., S., Harris Jr., J., S. 1998
  • High-speed quantum well optoelectronic gate based on diffusive conduction recovery Harris, J., S., Yairi, B., Coldren, C., W., Miller, D., A. B. 1998
  • Vertical InAs diffusion and surface ordering processes in InAs vertical quantum dot columns Physica E Solomon, G., S., Wu, W., Tucker, J., R., Harris Jr., J., S. 1998; 1-4 (2): 709-713
  • Two-dimensional Device Simulation for PHEMT Material and Process Control Pao, Y., C., Harris Jr., J., S. 1998
  • Iron Nitride Mask and Reactive Ion Etcjomg pf GaN Films J. Elec. Matls Lee, H., Harris Jr., J., S. 1998; #4 (27): 185-189
  • Basic Mechanisms of an Atomic Force Microscope Tip-induced Nano-oxidation Process of GaAs J. Appl. Phys. Okada, Y., Amano, S., Kawabe, M., Harris Jr., J., S. 1998; 83: 12, 7998-8001
  • Micromachined tunable vertical cavity lasers as wavelength selective tunable photodetectors Sugihwo, F., Lin, C., C., Bouteiller, J., C., Larson, M., Harris Jr., J., S. 1998
  • Low Noise Silicon RF FET Design Using Graded Doping and Stress Franca-Neto, L., M., Harris Jr., J., S. 1998
  • Statistics of peak spacings and widths in the quantum coulomb blockade regime Physica B Marcus, C., M., Patel, S., R., Duruöz, C., I., Harris Jr., J., S., Campman, K., Gossard, A., C. 1998; 251: 201-205
  • Micromachined Widely Tunable Vertical Cavity Laser Diodes J. of Microelectromechanical Systems Sugihwo, F., Larson, M., Harris Jr., J., S. 1998; 1 (7): 48-55
  • Bulk Spin Quantum Computation toward Large-scale Quantum Computation Dig. Tech. Papers, IEEE ISSCC Chuang, I., L., Vandersypen, L., M. K., Harris, J., S. 1998: 96-97
  • Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor Technical Digest, IEEE IEDM, San Francisco, CA Sugihwo, F., Lin, C., C., Eyres, L., A., Fejer, M., M., Harris Jr., J., S. 1998: 665
  • Laser diode cavity ring-down spectroscopy using acousto-optic modulator stabilization JOURNAL OF APPLIED PHYSICS Paldus, B. A., Harris, J. S., Martin, J., Xie, J., Zare, R. N. 1997; 82 (7): 3199-3204
  • Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs ELECTRONICS LETTERS Massengale, A. R., Ueda, T., Harris, J. S., Tai, C. Y., Deal, M. D., Plummer, J. D., Fernandez, R. 1997; 33 (12): 1087-1089
  • Growth of abrupt GaAs/Ge heterointerfaces by atomic hydrogen-assisted molecular beam epitaxy Okada, Y., Harris, J. S., SUTOH, A., Kawabe, M. ELSEVIER SCIENCE BV. 1997: 1039-1044
  • Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs ELECTRONICS LETTERS Sung, B., Chui, H. C., Fejer, M. M., Harris, J. S. 1997; 33 (9): 818-820
  • Zero chirp asymmetric fabry-perot electroabsorption modulator using coupled quantum wells IEEE PHOTONICS TECHNOLOGY LETTERS Trezza, J. A., Powell, J. S., Harris, J. S. 1997; 9 (3): 330-332
  • Correlations between ground and excited state spectra of a quantum Dot Science (New York, N.Y.) Stewart, D. R., Sprinzak, D., Marcus, C. M., Duruoz, C. I., Harris, J. S. 1997; 278 (5344): 1784-8

    Abstract

    The ground and excited state spectra of a semiconductor quantum dot with successive electron occupancy were studied with linear and nonlinear magnetoconductance measurements. A direct correlation was observed between the mth excited state of the N-electron system and the ground state of the (N + m)-electron system for m up to 4. The results are consistent with a single-particle picture in which a fixed spectrum of energy levels is successively filled, except for a notable absence of spin degeneracy. Further departures from the single-particle picture due to electron-electron interaction were also observed. Magnetoconductance fluctuations of ground states show anticrossings where wave function characteristics are exchanged between adjacent levels.

    View details for PubMedID 9388178

  • Whispering Gallery Mode Operation in Tunable Vertical Cavity Laser Structure Electron. Lett. Sugihwo, F., Larson, M., Harris Jr., J., S. 1997; 4 (33): 1467-8
  • Increased size uniformity through vertical quantum dot columns J. Crystal Growth Solomon, G., S., Komarov, S., Harris Jr., J., S., Yamamoto, Y. 1997; pt.2 (175): 707-712
  • Fabrication of Single Electron Memory on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process International Electron Devices Meeting, Washington, DC Matsumoto, K., Gotoh, Y., Shirakashi, J. I., Maeda, T., Harris Jr., J., S. 1997: 155-157
  • Atom-resolved Scanning Tunneling Microscopy of Vertically Ordered InAs Quantum Dots Appl. Phys. Lett. Wu, W., Solomon, G., S., Harris Jr., J., S., Tucker, J., R. 1997; 71: 1083-1085
  • Low Noise FET Design for Wireless Communications Franca-Neto, M., Mao, E., Harris Jr., J., S. 1997
  • Experiments on the Statistics of Coulomb Blockade Peak Spacing: Beyond Random Matrix Theory Marcus, C., M., Patel, S., R., Cronenwett, S., M., Stewart, D., R., Huibers, A., G., Harris Jr., J., S. 1997
  • Arsenic Precipitation in GaAs for Single-Electron Tunneling Applications Hung, C., Y., Harris Jr., J., S. 1997
  • Laser parameter extraction for tunable vertical cavity lasers Elect. Lett. Lin, C., C., Sugihwo, F., Harris Jr., J., S. 1997; 20 (33): 1705-1707
  • Intersubband Absorption Saturation Study of Narrow III-V Multiple Quantum Wells in the l = 2.8-9 µm Spectral Range Semicond. Sci. Technol. Vodopyanov, K., L., Chazapis, V., Phillips, C., C., Sung, B., Harris Jr., J., S. 1997; 12: 708-714
  • Growth of Thick GaN Films on RF Sputtered AIN Buffer Layer by Hydride Vapor Phase Epitaxy J. Electronic Materials Lee, H., Yuri, M., Ueda, T., Harris Jr., J., S., Sin, K. 1997; 8 (26): 898-902
  • Increased Ordering in Vertically Coupled InAs Quantum Dot Arrays Solomon, G., S., Harris Jr., J., S. 1997
  • Electromechanical Tuning of Lasing Wavelength of Vertical Cavity Lasers Sugihwo, F., Lin, C., C., Larson, M., Harris Jr., J., S. 1997
  • Cavity ring-down spectroscopy with Fourier-transform-limited light pulses Chem. Phys. Lett. Martin, J., Paldus, B., A., Zalicki, P., Wahl, E., H., Owano, T., G., Harris, J., S. 1997; 1-2 (258): 63-70
  • Localized Intermixing of AlAs and GaAs Layers for Lithographic Control of the Lateral Oxidation of AlAs Massengale, A., R., Tai, C., Y., Deal, M., D., Plummer, J., D., Harris Jr., J., S. 1997
  • Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy Chem. Phys Lett. Levenson, M., D., Paldus, B., A., Spence, T., G., Harb, C., C., Harris Jr., J., S., Zare, R., N. 1997
  • Single Electron Transistor on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process Matsumoto, K., Gotoh, Y., Shirakashi, J. I., Maeda, T., Harris Jr., J., S. 1997
  • Growth and Defects of Single Crystalline ZnO Buffer Layer on GaN Huang, T., F., Ueda, T., Spruytte, S., Harris Jr., J., S. 1997
  • 30nm Wavelength Tunable Vertical Cavity Lasers Sugihwo, F., Larson, M., C., Harris Jr., J., S. 1997
  • Scanned Potential Microscopy of a Two-dimensional electron gas Harris, J., S., McCormick, L., Woodside, M., Huang, M., McEuen, P., L., Duruöz, C., I. 1997
  • Increased Surface Ordering of InAs Island Arrays Using a Multi-Dot Column Subsurface Structure Komarov, S., A., Solomon, G., S., Harris Jr., J., S. 1997
  • Correlations between Ground and Excited State Spectra of a Quantum Dot Stewart, R., Sprinzak, D., Marcus, C., M., Duruöz, C., I 1997
  • Low Threshold Continuously Tunable Vertical Cavity Surface Emitting Lasers with 19.1 nm Wavelength Range Appl. Phys. Lett. Sugihwo, F., Larson, M., Harris Jr., J., S. 1997; 70: 547-549
  • Analysis of Device Parameters for Pnp-Type AlGaAs/GaAs HBTs Including High-Injection Using New Direct Parameter Extraction IEEE Trans. Electron Devices Kameyama, A., R., Massengale, C., H., Dai, C., H., Harris Jr., J., S. 1997; 1 (44): 1-10
  • Structural and photoluminescence properties of growth-induced InAs island columns in GaAs Solomon, G. S., Trezza, J. A., Marshall, A. F., Harris, J. S. A V S AMER INST PHYSICS. 1996: 2208-2211
  • Broad-Range Continuous Wavelength Tuning in Microelectromechanical Vertical-Cavity Surface-Emitting Lasers Digest IEEE/LEOS 1996 Summer Topical Meetings Harris Jr., J., S., Larson, M., C., Massengale, A., R. 1996
  • Intrinsic Bistability in Nonlinear Transport Through a Submicron Lateral Barrier Surface Science Pilling, G., Cobden, D., H., McEuen, P., L., Duruöz, C., I., Harris Jr., J., S. 1996; 1-3 (362): 652-655
  • Electroluminescence in vertically aligned quantum dot multilayer light-emitting diodes fabricating by growth-induced islanding Appl. Phys. Lett. Solomon, G., S., Larson, M., C., Harris Jr., J., S. 1996; 13 (69): 1897-1899
  • Vertical-cavity X-modulators for WDM Powell, J., S., Trezza, J., A., Morf, M., Harris Jr., J., S. 1996
  • Photoluminescence Study of Chloride VPE-Grown GaN Ueda, T., Yuri, M., Lee, H., Harris Jr., J., S. 1996
  • Thermodynamic Analysis and Growth Characterization of thick GaN films grown by Chloride VPE using GaCl3/N2 and NH3/N2 Lee, H., Yuri, M., Ueda, T., Harris Jr., J., S. 1996
  • Growth of Epitaxial GaN Films Using ZnO Buffer Layer by Pulsed Laser Deposition Huang, T., F., Tuncel, E., Yeo, J., S., Harris Jr., J., S. 1996
  • Chloride VPE Growth of GaN on Pulsed Laser Deposited ZnO buffer Layer Harris, J., S., Ueda, T., Yuri, M., Huang, T., F, Spruytte, S., Lee, H. 1996
  • Design of Quantum Well Intersubband Transitions for Non-linear Difference Frequency Mixing Technical Digest IEEE/LEOS: Nonlinear Optical Meeting Harris Jr., J., S. 1996
  • Deep Level Defects in GaAs on Si Substrates Grown by Atomic Hydrogen Assisted Molecular Beam Epitaxy J. Appl. Phys. Okada, Y., Harris Jr., J., S. 1996; 8 (80): 4770-4772
  • Control of Quasi-Bound States by Electron Bragg Mirrors in GaAs/Al0.3Ga0.7As Quantum Wells Appl. Phys. Lett. Sung, B., Chui, H., C., Martinet, E., L., Harris Jr., J., S. 1996; 19 (68): 2720 - 2722
  • The Mechanical Properties of NiAl Grown on GaAs by Molecular Beam Epitaxy Weckwerth, M., V., Harris Jr., J., S. 1996
  • Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature made by STM/AFM Nano-Oxidation Process Matsumoto, K., Ishii, M., Shirakashi, J. I., Vartanian, B., J., Harris Jr., J., S. 1996
  • Micromachined tunable Fabry-Perot filters for wavelength division multiplexing Larson, M., C., Harris Jr., J., S. 1996
  • Growth of GaAs and InAlAs on High Quality, Epitaxial, NiAl Metal Film Hung, Y., Weckwerth, M., V., Visokay, M., R., Pao, Y., C., Harris Jr., S., J. 1996
  • Application of Micro-Electro-Mechanical Systems to Optoelectronics Harris Jr., J., S. 1996
  • Control of Quasi-Bound States by Electron Bragg Mirrors and electron Lifetime Measurements in GaAs/AlGaAs Quantum Wells Sung, B., Woods, G., L., Rella, C., W., Schwettman, H., A., Fejer, M., M., Harris, J., S. 1996
  • Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs Phys. Rev. Lett. Solomon, G., S., Trezza, J., A., Marshall, A., F., Harris Jr., J., S. 1996; 6 (76): 952 - 955
  • Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process for TiOx/Ti System Appl. Phys. Lett. Matsumoto, K., Ishii, M., Segawa, K., Oka, Y., Vartanian, B., J., Harris Jr., J., S. 1996; 1 (68): 34-36
  • Vertical cavity X-modulators for WDM WAVELENGTH DIVISION MULTIPLEXING COMPONENTS Powell, J. S., Trezza, J. A., Morf, M., Harris, J. S. 1996; 2690: 207-216
  • Creation and Optimization of Vertical Cavity X-Modulators IEEE J. Quant. Elect. Trezza, J., A., Morf, M., Harris Jr., J., S. 1996; 1 (32): 53-60
  • Basic Analysis of Atomic-scale Growth Mechanisms for Molecular Beam Epitaxy of GaAs using atomic Hydrogen as a surfactant J. Vac.Sci. Technol. B Okada, Y., Harris Jr., J., S. 1996; 3 (14): 1725 - 1728
  • Vertical Cavity X-Modulators for Reconfigurable Optical Interconnection and Routing Powell, J., S., Trezza, J., A., Morf, M. 1996
  • Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia Yuri, M., Ueda, T., Lee, H., Itoh, K., Baba, T., Harris Jr., J., S. 1996
  • Size Dependence of Room Tempeature Operated Side Gate Single Electron Transistor with Multi-Islands Structure made by STM/AFM Nano-Oxidation Process Matsumoto, K., Ishii, M., Shirakashi, J., I., Vartanian, B., J., Harris Jr., S., J. 1996
  • GaN Film Growth by a Supersonic Arcjet Plasma Cappelli, M., A., Kull, A., E., Schwendner, K., Lee, H., Harris Jr., S., J. 1996
  • Broad-Range Continuous Wavelength Tuning in Microelectronmechanical Vertical Cavity Surface Emitting Lasers Harris Jr., J., S. 1996
  • Atomic Force Microscope Chemically Induced Direct Processing Shimbo, B., N., Komarov, S., Vartanian, B., J., Okada, Y., Harris Jr., S., J. 1996
  • Two-State Electrically Controllable Phase Diffraction Grating Using Arrays of Vertical-Cavity Phase Flip Modulators IEEE Photon. Techno. Lett. Trezza, J., A., Harris Jr., J., S. 1996; 9 (8): 1211-1213
  • Strain Relaxation in Compositionally Graded Epitaxial Layers J. Vac. Sci. Techno. B Kim, S., D., Lord, S., M., Harris Jr., J., S. 1996; 2 (14): 642-646
  • Optical Properties and Morphology of GaN Grown by MBE on Sapphire Substrates Tuncel, E., Oberman, D., B., Lee, H., Ueda, T., Harris Jr., S., J. 1996
  • Switching and Hysteresis in Quantum Dot Arrays J. of Nanotechnology Duruöz, I., Clarke, R., M., Marcus, C., M., Harris Jr., J., S. 1996; 4 (7): 372 - 375
  • Raman Scattering Study of GaN Films J. Appl. Phys. Kirollov, D., Lee, H., Harris Jr., J., S. 1996; 7 (80): 4058-4062
  • Observation of Super-Structure in High-Quality Pseudomorpic Film of NiAl grown on GaAs J. of Crystal Growth Hung, C., Y., Weckwerth, M., V., Marshall, A., F., Pao, Y., C., Harris Jr., J., S. 1996; 2 (169): 201-208
  • Continuously-tunable micromachined vertical-cavity surface-emitting laser with 18 nm range Electr. Lett. Larson, M., C., Massengale, A., R., Harris Jr., J., S. 1996; 4 (32): 330-332
  • Single electron devices with various structures made by STM/AFM nano-oxidation process Matsumoto, K., Ishii, M., Shirakashi, J., Vartanian, B., Harris Jr., S., J. 1996
  • Fabrication of Novel Quantum Devices - Toward Room Temperature Operation of Single Electron Devices Harris Jr., J., S. 1996
  • Wide and Continuous Wavelength Tuning in a Vertical Cavity Surface Emitting Laser Using a Micromachined Deformable Membrane Mirror Appl. Phys. Lett. Larson, M., C., Harris Jr., J., S. 1996; 7 (68): 891-893
  • Vapor Phase Epitaxy of GaN using GaCl3/N2 and NH3/N2 J. Crystal Growth Lee, H., Harris Jr., J., S. 1996: 689– 696
  • Saturation Study of III-V Multi Quantum Well Bound-to-Bound and Bound-to-Quasibound Intersubband Transitions in the 3 - 10 µm Spectral Range Semicond. Sci. Techno. Vodopyanov, K., L., Chazapis, V., Phillips, C., C., Sung, B., Harris Jr., J., S. 1996
  • Reactive Ion Etching of Gallium Nitride Films J. Electric Materials Lee, H., Oberman, D., B., Harris Jr., J., S. 1996; 5 (25): 835-837
  • Micromachined Tunable Vertical-Cavity Surface-Emitting Lasers Technical Digest 1996 IEEE IEDM Larson, M., C., Sugihwo, F., Massengale, A., R., Harris Jr., J., S. 1996
  • Collector-up AlGaAs/GaAs heterojunction bipolar transistors using oxidized AlAs for current confinement Electr. Lett. Massengale, C., H., Larson, M., C., Dai, C., Harris Jr., J., S. 1996; 4 (32): 399-401
  • Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs Appl. Phys. Lett. Solomon, G., S., Trezza, J., A., Harris Jr., J., S. 1995; 23 (66): 3161-3163
  • CHARACTERIZATION OF IN-SITU VARIABLE-ENERGY FOCUSED ION BEAM/MBE MQW STRUCTURES Bone, D. J., LEE, H., Williams, K., Harris, J. S., Pease, R. F. IOP PUBLISHING LTD. 1995: 359-362
  • Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process Matsumoto, K., Ishii, M., Segawa, K., Oka, Y., Vartanian, B., J., Harris Jr., J., S. 1995
  • MBE Growth of High-Quality GaAs and AlGaAs Molecular Beam Epitaxy: Applications to Key Materials Larkins, C., Harris Jr., J., S. edited by Farrow, R., F. C. Noyes, Park Ridge. 1995: 114-274
  • Growth Induced and Patterned 0-Dimensional Quantum Structures in Low Dimensional Structures Prepared by Epitaxial Growth of Regrowth on Patterned Substrate Solomon, G., S., Duruöz, C., I., Trezza, J., A., Clarke, R., M., Marcus, C., M., Harris, J., S. edited by Eberl et al, K. 1995: 313 - 324
  • Continuously Tunable Micro-Electromechanical Vertical-cavity Surface-emitting Lasers Internl J. Optoelectronics Larson, M., C., Massengale, A., R., Harris Jr., J., S. 1995; 5 (10): 401 – 408
  • Broadly -Tunable Resonant-Cavity Light-emitting Diode IEEE Photonics Technology Lett. Larson, M., C., Harris Jr., J., S. 1995; 11 (7): 1267 - 1269
  • Periodic Mode Shift in Vertical Cavities Grown by Molecular Beam Epitaxy Eng, L., E., Toh, K., Chang-Hasnain, C., J., Bacher, K., Harris Jr., J., S. 1995
  • Comparison of Experimental and Theoretical Results of Room Temperature Operated Single Electron Transistor made by STM/AFM Nano - Oxidation Process Matsumoto, K., Ishii, M., Segawa, K., Oka, Y., Vartanian, B., J., Harris Jr., J., S. 1995
  • Tunable Mid-Infrared Generation by Difference Frequency Mixing of Diode Laser Wavelengths in Intersubband InGaAs / AlAs Quantum Wells Chui, H., C., Woods, G., L., Fejer, M., M., Martinet, E., L., Harris Jr., J., S. 1995
  • Threshold, Switching, and Hysteresis in Quantum Dot Arrays Phys. Rev. Lett. Duröz, C., I, Clarke, R., M., Marcus, C., M., Harris Jr., J., S. 1995; 16 (74): 3237-3240
  • Observation of 1.5µm Quantum Confined Stark Effect in InGaAs/AlGaAs Multiple Quantum Wells on GaAs Substrates J. of Vac. Sci. Tech. Kim, S., D., Trezza, J., A., Harris Jr., J., S. 1995; 4 (B 13): 1526 - 1528
  • A Wet Etching Technique for Accurate Etching of GaAs/AlAs Distributed Bragg Reflectors J. Electrochem. Soc. Bacher, K., Harris Jr., J., S. 1995; 7 (142): 2386 – 2388
  • Wavelength Shift in Vertical Cavity Laser Arrays on a Patterned Substrate Eng, L., E., Bacher, K., Yuen, W., Larson, M., Ding, G., Harris Jr., J., S. 1995
  • Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs Solomon, G., S., Trezza, J., A., Harris Jr., J., S. 1995
  • MBE growth of gan with ECR plasma and hydrogen azide Oberman, D., B., Lee, H., Gotz, W., K., Harris Jr., J., S. 1995
  • Heteroepitaxial growth of GaN on GaAs by ECR plasma-assisted MBE Lee, H., Oberman, D., B., Gotz, W., Harris Jr., J., S. 1995
  • Effect of substrate miscut on the structural-properties of ingaas linear graded buffer layers grown by molecular-beam epitaxy on GaAs Eldredge, J., W., Matney, K., M., Goorsky, M., S., Chui, H., C., Harris Jr., J., S. 1995
  • Coupled Quantum Wells for Optical Modulation Confined Electron and Photon Systems Trezza, J., A., Harris Jr., J., S. edited by Burnstenin, E., Weisbuck, C. Plenum Press. 1995: 759 - 764
  • Vertical Coupled-Cavity Microinterferometer on GaAs with deformable-membrane top mirror IEEE Photonics Technology Lett. Larson, M., Pezeshki, B., Harris Jr., J., S. 1995; 4 (7): 382 - 384
  • Temperature Dependence of Phase Breaking in Ballistic Quantum Dots Phys. Rev. B Clarke, R., M., Chan, I., H., Marcus, C., M., Duruöz, C., I., Harris Jr., J., S., Campman, K. 1995; 4 (52): 2656-2659
  • Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas Appl. Phys. Lett. Lee, H., Oberman, D., B., Harris Jr., J., S. 1995; 12 (67): 1754 – 1756
  • Multiple Wavelength Vertical Cavity Laser Arrays on Patterned Substrates IEEE J. of Select Topics in Quantum Electronics Eng, L., E., Bacher, K., Yuen, W., Harris Jr., J., S., Chang-Hasnain, C., J. 1995; 1: 624 - 628
  • Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxy J. Crystal Growth Weckwerth, M., V., Hung, C., Y., Pao, Y., C., Harris Jr., J., S. 1995; 150: 1150 – 1153
  • Interface Smoothing of High Indium Content InGaAs Layers on GaAs J. Electrochem. Soc. Kim, S., D., Lee, H., J., Harris Jr., J., S. 1995; 5 (142): 1667-1670
  • Intersubband Transitions to the Above-Barrier States Controlled by Electron Bragg Mirrors Sung, B., Chui, H., C., Martinet, E., L., Harris Jr., J., S. 1995
  • Coupled Quantum Wells for Optical Modulation Trezza, J., A., Harris Jr., J., S. 1995
  • Fabrication of GaAs Orientation Template Substrates for Quasi-Phasematched Guided-Wave Nonlinear Optics Nonlinear Guided Waves and Their Applications, OSA Technical Digest Series Optical Society of America, Washington DC Eyres, L., A., Ebert, C., B., Chui, H., C., Harris Jr., J., S., Fejer, M., M. 1995: 156-158
  • Broadly Tunable Resonant-cavity Light Emission Appl. Phys. Lett. Larson, M., C., Harris Jr., J., S. 1995; 5 (67): 590 - 592
  • 2-dimensional analysis of self-sustained pulsation for narrow-stripe AlGaAs lasers IEEE J. Selected Topics Quantum Electronics Yuri, M., Harris Jr., J., S., Takayama, T., Imafuji, O., Naito, H., Kume, M. 1995; 2 (1): 473-479
  • Growth Induced and Patterned 0-Dimensional Quantum Structures Harris, J., S., Solomon, G., S., Duruöz, C., I., Trezza, J., A., Clarke, R., M., Marcus, C., M. 1995
  • GaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxy Okada, Y., Harris Jr., J., S., Sutoh, A., Kawabe, M. 1995
  • MBE Growth of High Tc Superconductors Molecular Beam Epitaxy: Applications to Key Materials Schlom, D., G., Harris Jr., J., S. edited by Farrow, R., F. C. Noyes, Park Ridge. 1995: 505-622
  • Periodically Induced Mode Shift in Vertical Cavity Fabry Perot Etalons Grown by Molecular Beam Epitaxy Photon. Techn. Lett. Eng, L., E., Toh, K., Chang-Hasnain, C., J., Bacher, K., Harris Jr., J., S. 1995; 3 (7): 235-237
  • Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide J. Crystal Growth Oberman, D., B., Lee, H., Götz, W., K., Harris Jr., J., S. 1995; 150: 912 – 915
  • Modeling of Turn-on Jitter in Vertical Cavity Surface Emitting Lasers Elec. Lett. Harris, J., S., Ding, G., Y., Corzin, S., W., Tan, M., R., Wang, S., Y. 1995
  • Growth and Characterization of Epitaxial Strontium Barium Niobate Thin Films Prepared by Pulsed Laser Deposition J. of Electronic Materials Schwyn-Thöny, S., Youden, K., E., Harris Jr., J., S., Hesselink, L. 1995
  • 50 nm GaAs/AlAs wire structures grown on corrugated GaAs J. Vac. Sci. Technol. Miller, D., J., Harris Jr., J., S. 1994; 2 (B12): 1286 - 1289
  • Large Energy Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells NATO ASI: Quantum Well Intersubband Transition Physics and Device Chui, H., C., Martinet, E., L., Fejer, M., M., Harris Jr., J., S. Kluwer Academic Publishers. 1994: 251-9
  • Growth of Epitaxial Strontium Barium Niobate Thin Films by Pulsed Laser Deposition Appl. Phys. Lett. Thöny, S., Schwyn, Youden, K., E., Harris Jr., J., S., Hesselink, L. 1994; 16 (65): 2018–2020
  • Short Wavelength Intersubband Transitions in InGaAs/AlGaAs quantum wells grown on GaAs Appl. Phys. Lett. Chui, H., C., Martinet, W., L., Fejer, M., M., Harris Jr., J., S. 1994; 6 (64): 736-8
  • Reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxy on rotating substrates J. Vac. Sci. Technol. van der Wagt, J., P. A., Harris Jr., J., S. 1994; 2 (B 12): 1236-8
  • MBE Growth of In0.65Ga0.35As Quantum Wells on GaAs Substrates for 1.5µm Exciton Resonance J. Crystal Growth Kim, S., D., Lee, H., Harris Jr., J., S. 1994: 37-43
  • Growth Studies on In0.5Ga0.5As / AlGaAs Quantum Wells Grown on GaAs with a Linearly Graded InGaAs Buffer J. Vac. Sci. Technol Chui, H., C., Harris Jr., J., S. 1994; 2 (B12): 1019-1022
  • Creation and Optimization of Vertical Cavity Phase Flip Modulators J. of Appl. Phys. Trezza, J., A., Harris Jr., J., S. 1994; 10 (75): 4878-4884
  • I-V Kink in InAIAs/InGaAs MODFETs due to Weak Impact Ionization Process in the InGaAs Channel Zhou, G., G., Fischer-Colbrie, A., Harris Jr., J., S. 1994
  • Free-electron laser nonlinear spectroscopy of doubly resonant (5.5-3.0 µm and 4.1- 2.1 µm) InGaAs/AlGaAs asymmetric quantum wells Martinet, E., L., Woods, G., L., Chui, H., C., Harris Jr., J., S., Fejer, M., M., Rella, C., A. edited by Dohler, G., H., Koteles, E., S. 1994
  • Applications of High Indium Content InGaAs/AlGaAs Quantum Wells in the 2-7µm Regime NATO ASI: Quantum Well Intersubband Transition Physics and Devices Martinet, E., L., Vartanian, B., J., Woods, G., L., Chui, H., C., Harris Jr., J., S. edited by Liu, H., C., Levine, B., F., Andersson, J., Y. Kluwer Academic Publishers. 1994: 261-273
  • The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si Knall, J., Romano, L., T., Biegelsen, D., K., Bringans, R., D., Chui, H., C., Harris Jr., J., S. 1994
  • Reflectance and Raman Spectra of Metallic Oxides, LaSrCoO and CaSrRuO: Resemblance to Superconducting Cuprates Bozovic, I., Kim, J., H., Harris Jr., J., S., Eom, C., B., Phillips, J., M., Cheung, J., T. 1994
  • Observation of Quantum Mechanical Reflections of Electrons at an In-situ Grown GaAs / Aluminum Schottky Barrier J. Vac. Sci. Technol. Weckwerth, M., V., Wagt, J., P. A. van der, Harris Jr., J., S. 1994; 2 (B 12): 1303-5
  • Short Wavelength (5.36 µm to 1.85 µm) Nonlinear Spectroscopy of Coupled InGaAs / AlAs Intersubband Quantum Wells Martinet, E., L., Chui, H., C., Woods, G., L., Fejer, M., M., Harris Jr., J., S. 1994
  • Normal-incidence intersubband hole absorption in In0.5Ga0.5As/Al0.45Ga0.55As quantum wells Vartanian, B., J., Harris Jr., J., S. 1994
  • Local vibrational modes in Mg-doped gallium nitride Phys. Rev. B Brandt, M., S., Ager III, J., W., Götz, W., Johnson, N., M., Harris Jr., J., S., Molnar, R., J. 1994; 49: 14758 - 14761
  • Doubly resonant second harmonic generation of 2.0 µm light in coupled InGaAs/AlAs Quantum Wells Appl. Phys. Lett. Chui, H., C., Martinet, E., L., Woods, G., L., Fejer, M., M., Harris Jr., J., S. 1994; 25 (64): 3365 - 3367
  • Determination of AlAs mole fraction in Alx Ga1-xAs using Raman spectroscopy and x-ray diffraction J. Vac. Sci. Technol. Solomon, G., S., Kirillov, D., Chui, H., C., Harris Jr., J., S. 1994; 2 (B12): 1078-1081
  • Phase-Breaking Rates from Conductance Fluctuations in a Quantum Dot Marcus, C., M., Clarke, R., M., Chan, I., H., Duruöz, C., I., Harris Jr., J., S. 1994
  • Observation of Resonant Tunneling Through Localized Continuum States in Electron Wave Interference Diodes Appl. Phys. Lett. Carnahan, R., E., Maldonado, M., A., Martin, K., P., Higgins, R., J., Van der Wagt, J., P. A., Harris Jr., J., S. 1994; 18 (64): 2403-2405
  • The Effect of Si Doping on DX Centers in Al.26Ga.74As Solomon, G., S., Roos, G., Harris Jr., J., S. 1993
  • Large, Low-Voltage Absorption Changes and Absorption Bistability in GaAs/AlGaAs/InGaAs Asymmetric Quantum Wells J. Appl. Phys. Trezza, J., A., Larson, M., C., Lord, S., M., Harris Jr., J., S. 1993; 74: 1972-1978
  • Electroabsorption Modulators Operating at 1.3 µm on GaAs substrates Optical and Quantum Electronics Lord, S., M., Pezeshki, B., Harris Jr., J., S. 1993; 25: 5953-5964
  • The Effect of Si Planar Doping on DX Centers in Al0.26Ga0.74As J. Crystal. Growth. Solomon, G., S., Roos, G., Harris Jr., J., S. 1993; 127: 737-741
  • 1.3µm Electroabsorption Reflection Modulators on GaAs Appl. Phys. Lett. Lord, S., M., Trezza, J., A., Larson, M., C., Pezeshki, B., Harris Jr., J., S. 1993; 63: 806-808
  • 1.3 µm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer Lord, S., M., Pezeshki, B., Kim, S., D., Harris Jr., J., S. 1993
  • Low Voltage, Low Chirp, Absorptively Bistable Transmission Modulators Using Type IIA and Type IIB In0.3Ga0.7As/Al0.33Ga0.67As/In0.15Ga0.85As Asymmetric Coupled Quantum Wells J. Appl. Phys. Trezza, J., A., Larson, M., C., Lord, S., M., Harris, J., S. 1993; 11 (74): 6495-6502
  • Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates Jpn. J. Appl. Phys. Part 1 Ito, H., Harris Jr., J., S. 1993; 32 (11A): 4923-4927
  • Schwabish Gmundt, Germany Wagt, J., P. A van, Harris Jr., J., S. 1993
  • Critical Passivation Ledge Thickness in AlGaAs/GaAs Heterojunction Bipolar Transistors J. Vac. Sci. Technol. Liu, W., Harris, J., S. 1993; B 11: 6-9
  • Zero Chirp Quantum Well Asymmetric Fabry-Perot Reflection Modulators Operating Beyond the Matching Condition J. Appl. Phys. Trezza, J., A., Larson, M., C., Harris Jr., J., S. 1993; 12 (74): 7061-7066
  • Surface-emitting Second-harmonic Generation in a Semiconductor Vertical Resonator Optics Lett. Lodenkamper, R., Bortz, M., L., Fejer, M., M., Bacher, K., Harris Jr., J., S. 1993; 21 (18): 1798-1800
  • Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells Appl. Phys. Lett. Chui, H., C., Lord, S., M., Martinet, E., Fejer, M., M., Harris Jr., J., S. 1993; 3 (63): 364-366
  • High Contrast Reflection Electro-absorption Modulators with Zero Phase Change Appl. Phys. Lett. Trezza, J., S., Pezeshki, B., Larson, M., C., Lord, S., M., Harris Jr., J., S. 1993; 63: 452-454
  • Hydrogen Passivation of Nonradiative Defects in InGaAs/AlxGa1-xAs Quantum Wells J. Appl. Phys. Lord, S., M., Roos, G., Harris, J., S., Johnson, N., M. 1993
  • Cut-off Frequency and D.C. Gain of Heterojunction Bipolar Transisitrs Int. J. Electronics Liu, W., Harris Jr., J., S. 1993; 74: 401-106
  • Graded Buffer Layers for Molecular Beam Epitaxial Growth of High In Content InGaAs On GaAs for Optoelectronics Lord, S., M., Pezeshki, B., Marshall, A., F., Harris Jr., J., S., Fernandez, R., Harwit, A. 1993
  • Simulation of RHEED Intensity Oscillations During MBE Growth J. Crystal. Growth. van der Wagt, J., P. A., Harris Jr., J., S. 1993; 127: 1025-1029
  • Phase Characteristics of Reflection Electro-Absorption Modulators Appl. Phys. Letts. Liu, D., Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1993; 62: 2158-2160
  • Lattice Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates IEEE Trans. Ed Ito, H., Harris Jr., J., S. 1993
  • High Contrast Asymmetric Fabry-Perot Appl Phys. Lett. Trezza, J., A., Pezeshki, B., Larson, M., C., Lord, S., M., Harris Jr., J., S. 1993; 74: 452-454
  • Enhancement of Photoluminescence Intensity in InGaAs/Al(x)Ga(1-x)As Quantum Wells by Hydrogenation Appl. Phys. Lett. Lord, S., M., Roos, G., Pezeshki, B., Harris Jr., J., S., Johnson, N., M. 1992; 60: 2276-2278
  • Stacking Fault Stability in GaAs/Si Hetero-Epitaxial Growth Crystal Growth Kim, S., D., Harris Jr., J., S. 1992; 123: 439-444
  • Molecular Beam Epitaxy Growth of Vertical Cavity Optical Devices with In-Situ Corrections Appl. Phy. Lett. Bacher, K., Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1992; 61: 1387-1889
  • Ideality Factor of Extrinsic Base Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors Elect. Lett. Harris, J., S., Liu, W. 1992; 28: 379-380
  • High-Performance Microwave AlGaAs-InGaAs Pnp HBT with High-DC Current Gain IEEE Microwave & Guided Wave Letts. Liu, W., Costa, D., Hill D., Harris Jr., J., S. 1992: 331-333
  • Geometrical Growth Rate Nonuniformity Effects on Reflection High-Energy Electron Diffraction Signal Intensity Decay J. Vac. Sci. Technol. B van der Wagt, J., P. A., Bacher, K., L., Solomon, G., S., Harris Jr., J., S. 1992: 825-828
  • Effects of Replacing a Portion of the AlGaAs Base-Emitter Junction of Heterojunction Bipolar Transistors by GaAs Int. Jrnl. Elect. Liu, W., Harris Jr., J., S. 1992; 72: 401-408
  • Design and Performance of a Low-Threshold-Current Grating-Coupled Surface-Emitting Laser Solid State Elect. Takigawa, S., Bacher, K., Aronson, L., B., Harris Jr., J., S. 1992; 35: 1241-1245
  • Derivation of the Emitter-Collector Transit Time of Heterojunction Bipolar Transistors Solid State Elect. Liu, W., Costa, D., Harris Jr., J., S. 1992; 35: 541-545
  • Dependence of the Base Crowding Effect on Base Doping and Thickness for Npn AlGaAs/GaAs HBTs Elect. Lett. Liu, W., Harris, J., S. 1992; 22 (27): 2048-2050
  • Contact Impedance in Heterojunction Bipolar Transistors Solid State Elect. Liu, W., Dai, C., Harris Jr., J., S. 1992; 35: 547-552
  • Hydrogen Passivation of Defects in InGaAs/AlxGa1-xAs Quantum Wells Lord, S., M., Roos, G., Pezeshki, B., Harris Jr., J., S. 1992
  • Optical Phase Modulator Utilizing Electroabsorption in a Fabry-Perot Cavity Appl. Phys. Lett. Pezeshki, B., Williams, G., A., Harris Jr., J., S. 1992; 60: 1061-1063
  • Nonlinear Optical Properties and Ultrafast Response of GaAs/AlAs Type-II Quantum Wells IEEE JQE Fu, W., S., Harris Jr., J., S., Binder, R., Koch, S., W., Klem, J., F., Olbright, G., R. 1992; 28: 2404-2415
  • Low-Conductance Drain (LCD) Design of InAlAs/InGaAs/InP HEMT’s IEEE Electron Dev. Lett. Pao, Y., C., Harris Jr., J., S. 1992; 13: 535-537
  • Low Threshold Current Grating-Coupled Surface-Emitting Strained-InGaAs Single Quantum Well Laser with GaAs Optical Confinement Structure Appl. Phys. Lett. Takigawa, S., Bacher, K., Aronson, L., B., Harris Jr., J., S. 1992; 60: 265-267
  • Free Chare-Carrier Plasmons in Ba1-x KxBi03: A Close Relation to Cuprate Superconductors Phys. Rev. B Bozovic, I., Kim, J., H., Harris, J., S., Hellman, E., S., Hartford, E., H., Chan, P., K. 1992; 46: 1182-1187
  • Current Gain of Graded AlGaAs/GaAs Heterojunction Bipolar Transistors With and Without a Base Quasi-Electric Field IEEE Tran. Elect. Dev. Liu, W., Costa, D., Harris Jr., J., S. 1992; 39: 2422-2429
  • Current Dependence of Base-Collector Capacitance of Bipolar Transistors Solid State Elect. Liu, W., Harris Jr., J., S. 1992; 35: 1051-1057
  • A High-Gain AlGaAs/GaAs Heterojunction Bipolar Transistor Grown on Silicon Substrate Jpn. J. Appl. Phys. Harris, J., S, Liu, W., Kim, S., D. 1992; 31: 2656-2659
  • 1.3 µm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer J. Crystal Growth. Lord, S., M., Pezeshki, B., Kim, S., D., Harris, J., S. 1992: 759-764
  • Effects of Emitter-Base Contact Spacing on the Current Gain in Heterojunction Bipolar Transisitors Jpn. J. Appl. Phy. Liu, W., Harris, J., S. 1992; 31: 2349-2351
  • Monolithic Integration GaAs and Si Bipolar Devices for Optical Interconnect Systems Nasserbakht, G., N., Adkisson, J., W., Wooley, B., A., Harris Jr., J., S., Kamins, T., I., Wong, S., S. 1992
  • X-Valley Tunneling in Single AlAs Barriers J. Appl. Phys. Boykin, T., B., Harris Jr., J., S. 1992; 72: 988-992
  • InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substratee Electronics Letters Ito, H., Harris Jr., J., S. 1992; 7 (28): 655-656
  • Diode Ideality Factor for Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transisitors IEEE Trans. Elect. Dev. Liu, W., Harris, J., S. 1992; 39: 2726-2732
  • An Advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Applications Jpn. J. Appl. Phys. Liu, W., Dai, C., Harris Jr., J., S. 1992; 31: L452-L454
  • Visible Wavelength Fabry-Perot Reflection Modulator Using Indirect-Gap AlGaAs/As Elect. Lett Pezeshki, B., Liu, D., Lord, S., M., Harris Jr., J., S. 1992; 28: 1170-1171
  • Parastic Conduction Current in the Passivation Ledge of AlGaAs/GaAs Heterojunction Bipolar Transistors Solid State Elect. Liu, W., Harris Jr., J., S. 1992; 35: 891-895
  • Optical Gain and Ultrafast Nonlinear Response in GaAs/AlAs Type-II Quantum Wells Appl. Phys. Lett. Fu, W., S., Olbright, G., R., Klem, J., F., Harris Jr., J., S. 1992; 14: 1661-1663
  • Mesa Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors with an Emitter-Base-Emitter Structure J. Vac. Sci. Technol. B Liu, W., Harris, J., S. 1992: 1285-1290
  • Low-Frequency Noise Properties of N-p-n AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Trans. Elect. Dev. Costa, D., Harris Jr., J., S. 1992; 39: 2383-2394
  • Hydrogen Passivation of Si and Be Dopants in InAlAs Roos, G., Johnson, N., M., Pao, Y., C., Harris Jr., J., S., Herring, C. 1992
  • Noninterferometric Optical Subtraction using Reflection-Electroabsorption Modulators Optics Letters Shoop, B., L., Pezeshki, B., Goodman, J., W., Harris Jr., J., S. 1992; 17: 58-60
  • Laser-Power Stabilization Using a Quantum-Well Modulator IEEE Photonics Tech. Lett. Shoop, B., L., Pezeshki, B., Goodman, J., W., Harris Jr., J., S. 1992; 4: 136-139
  • Influence of Dislocations on the DC Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Elect. Dev. Lett. Ito, H., Nakajima, O., Furuta, T., Harris Jr., J., S. 1992; 13: 232-234
  • Anti-Resonances in the Transmission of a Simple Two-State Model Phys. Rev. B Boykin, T., B., Pezeshki, B., Harris Jr., J., S. 1992; 19 (46): 12769-12772
  • Investigation of High In Content InGaAs Quantum Wells Grown on GaAs by Molecular Beam Epitaxy Elect. Lett. Lord, S., M., Pezeshki, B., Harris Jr., J., S. 1992; 28: 1193-1195
  • Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing Appl. Phys. Lett. Yamada, N., Harris, J., S. 1992; 20 (60): 2463-65
  • GaAs/AlAs Quantum Wells for Electroabsorption Modulators Appl. Phys. Lett. Pezeshki, B., Lord, S., M., Boykin, T., B., Harris Jr., J., S. 1992; 60: 2779-2781
  • AlGaAs/AlAs QW Modulator for 6328Å Operation Elect. Letts. Pezeshki, B., Lord, S., M., Boykin, T., B., Shoop, B., L., Harris Jr., J., S. 1991; 27: 1971-1973
  • Direct Extraction of the AlGaAs/GaAs Heterojunction Bipolar Transistor Small-Signal Equivalent Circuit IEEE Transactions on Electron Dev. Costa, D., Liu, W., Harris Jr., J., S. 1991; 38: 2018-2024
  • Lateral Resonant Tunneling Transistors Employing Field-Induced Quantum Wells and Barriers Chou, S., Y., Allee, D., R., Pease, R., F., Harris Jr., J., S. 1991
  • Geometrical Growth Rate Nonuniformity Effects on RHEED Signal Intensity Decay Wagt, J., P. A. van der, Bacher, K., L., Solomon, G., S., Harris Jr., J., S. 1991
  • Femtosecond Gain Dynamics in Semiconductors Harris, J., S., Fu, W., S., Poirier, G., E., Bryan, R., P., Klem, J., F., Olbright, G., R. 1991
  • Thermal Dissociation Energy of the Si-H Complex in n-type GaAs Appl. Phys. Lett. Roos, G., Johnson, N., M., Herring, C., Harris, J., S. 1991; 59: 461-463
  • Second-Order Susceptibility in Asymmetric Quantum Wells and its Control by Proton Bombardment Appl. Phys. Lett. Yoo., S., J. B., Fejer, M., M., Byer, R., L., Harris Jr., J., S. 1991; 58: 1724-1726
  • Optical Study of Plasmons in Tl2Ba2Ca2Cu3O10 Phys. Rev. Bozovic, I., Kim, J., H., Harris Jr., J., S., Lee, W., Y. 1991; 43: 1169-1172
  • Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes Superlattices & Microstructures Harris, J., S., Rascol, J., J. L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. 1991; 10: 175-178
  • Accurate Measurement of MBE Substrate Temperature J. Crystal Growth Lee, W., S., Yoffee, G., W., Schlom, D., G., Harris Jr., J., S. 1991; 111: 131-135
  • Reflection Electro-Absorption Modulator with High Reflectivity Change in a Novel Normally-Off Configuration Thomas, D., Pezechki, B., Harris Jr., J., S. 1991
  • Reduction of Low-Frequency Noise In Npn AlGaAs/GaAs HBTs Costa, D., Liu, W., Harris Jr., J., S. 1991
  • Electro-Absorption in InGaAs/AlGaAs Quantum Wells Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1991
  • Dynamic Optical Grating for Laser Beam Steering Applications Pezeshki, B., Apte, R., Lord, S., M., Harris Jr., J., S. 1991
  • Accumulation mode GaAlAs/GaAs bipolar transistor Harris, J., S., Matsumoto, K., Ishii, M., Morozumi, H., Imai, S., Sakamoto, K. 1991
  • Threshold Reduction in Strained InGaAs Single Quantum Well Lasers by Rapid Thermal Annealing Appl Phys. Lett. Yamada, N., Roos, G., Harris Jr., J., S. 1991; 59: 1040-1042
  • Plasmons in High-Temperature Superconductors Physica C Kim, J., H., Bozovic, I., Harris Jr., J., S., Lee, W., Y., Eom, C., B., Geballe, T., H. 1991; 185: 1019-1020
  • Enhancement of Optical Reflectivity of High-Tc Superconducting Films by Ion Milling Appl. Phys. Letts. Kim, J., H., Char, K., Bozovic, I., Lee, W., Y., Kapitulnik, A., Harris Jr., J., S. 1991; 58: 2558-2560
  • A Tight Binding Model for GaAs/AlAs Resonant Tunnel Diodes Phys. Rev.B Boykin, T., B., van der Wagt, J., P. A., Harris Jr., J., S. 1991; 43: 4777-4784
  • Plasmons in High -Tc Cuprate Superconductors Kim, J., H., Bozovic, I., Harris Jr., J., S., Lee, W., Y., Eom, C., B., Geballe, T., H. edited by Ashkenazy, J., Vezzol, G. 1991
  • Physical Origin of the High Output Conductance in In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs Pao, Y., C., Harris Jr., J., S. 1991
  • Accumulation mode GaAlAs/GaAs bipolar transistor with two dimensional hole gas base Harris, J., S., Matsumoto, K., Ishii, M., Morozumi, H., Imai, S., Sakamoto, K. 1991
  • Surface Emitting Second Harmonic Generation in Vertical Resonator Elect. Ltts. Lodenkamper, R., Fejer, M., M., Harris Jr., J., S. 1991; 27: 1882-1884
  • Preparation of Optically Smooth Surfaces of High-Tc Superconducting Films Kim, J., H., Kapitulnik, A., Harris Jr., J., S., Char, K., Bozovic, I., Lee, W., Y. 1991
  • Low-Frequency Noise Characterization of Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Costa, D., Harris, J., S. 1991
  • Femtosecond-gain Spectroscopy of GaAs Kim, J., H., Kapitulnik, A., Harris Jr., J., S., Char, K., Bozovic, I., Lee, W., Y. 1991
  • Theoretical Comparison of Base Bulk Recombination Current and Surface Recombination Current of a MESA AlGAAs/GaAs Heterojunction Bipolar Transistor Solid State Electronics Liu, W., Costa, D., Harris Jr., J., S. 1991; 34: 1119-1123
  • The Design of GaAs Resonant Tunneling Diodes with Peak Current Densities over 2x105 a cm-2 J. Appl Phys. Wolak, E., Ozbay, E., Park, B., G., Diamond, S., K., Bloom, D., M., Harris Jr., J., S. 1991; 69: 3345-3350
  • Study of Optical Plasmons InLa1.85Sr0.15Cu2O4 Physica C Harris, J., S., Kim, J., H., Bozovic, I., Eom, C., B., Geballe, T., H. 1991; 174: 435-439
  • Quantum Well Modulators for Optical Beam Steering Applications IEEE Phot. Tech. Lett. Pezeshki, B., Apte, R., B., Lord, S., M., Harris, J., S. 1991; 3: 790-792
  • Novel Cavity Design for High Reflectivity Changes in a Normally Off Electroabsorption Modulator Appl. Phys. Lett. Pezeshki, B., Thomas, D., Harris Jr., J., S. 1991; 58: 813-815
  • Electroabsorptive Modulators in InGaAs/AlGaAs Appl Phys. Lett. Pezeshki, B., Lord, S., M., Harris Jr., J., S. 1991; 59: 888-890
  • Effect of High Current Density and Doping Concentration on the Characteristics of GaAs/AlAs Vertically Integrated Resonant Tunneling Diodes J. Appl. Phys. Park, B., G., Wolak, E., Harris Jr., J., S. 1991; 11 (70): 7141 - 7148
  • Comparison of the Effects of Surface Passivation and Base Quasi-Electric Fields on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors Grown on GaAs and Si Substrates Appl Phys. Lett. Liu, W., Costa, D., Harris Jr., J., S. 1991; 59: 691-693
  • The Relative Effect on the Oxygen Concentration in YBa2Cu3O7-d of Atomic and Ionic Oxygen Fluxes, Produced by a Small Compact Electron Cyclotron Resonance Source J. Vac. Sci. Technol. Yamamoto, K., Hammond, R., H., Harris Jr., J., S. 1991; A9: 2587-2593
  • Molecular Beam Epitaxial Growth and Structural Design In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs J. Crystal. Growth Pao, Y., C., Harris Jr., J., S. 1991; 111: 489-494
  • High Output Conductance of InAlAs/InGaAs/InP MODFET due to Weak Impact Ionization in the InGaAs Channel IEDM Technical Digest Harris, J., S., Zhou, G., G., Fischer-Colbrie, A., Miller, J., Pao, Y., C., Hughes, B. 1991: 247-250
  • OPTIMIZATION OF MODULATION RATIO AND INSERTION LOSS IN REFLECTIVE ELECTROABSORPTION MODULATORS APPLIED PHYSICS LETTERS Pezeshki, B., Thomas, D., Harris, J. S. 1990; 57 (15): 1491-1492
  • ATOMICALLY LAYERED HETEROEPITAXIAL GROWTH OF SINGLE-CRYSTAL FILMS OF SUPERCONDUCTING BI2SR2CA2CU3OX APPLIED PHYSICS LETTERS Eckstein, J. N., Bozovic, I., VONDESSONNECK, K. E., Schlom, D. G., Harris, J. S., BAUMANN, S. M. 1990; 57 (9): 931-933
  • NOVEL DOUBLY SELF-ALIGNED ALGAAS/GAAS HBT ELECTRONICS LETTERS LIU, W. U., Costa, D., Harris, J. 1990; 26 (17): 1361-1362
  • IMPROVED DESIGN OF ALAS/GAAS RESONANT TUNNELING DIODES APPLIED PHYSICS LETTERS Cheng, P., Harris, J. S. 1990; 56 (17): 1676-1678
  • Growth of untwinned Bi2Sr2Ca2Cu3Ox Thin Films by Atomically Layered Epitaxy Appl. Phys. Lett. Eckstein, J., N., Bozovic, I., Dessonneck, K., E. von, Schlom, D., G., Harris Jr., J., S., Baumann, S., M. 1990: 1049-1051
  • Superstructure in Thin Films of Bi-Based Compounds on MgO J. J. Appl. Phy Harris, J., S., Kojima, K., Schlom, D., G., Kuroda, K., Tanioku, M., Hamanaka, K. 1990; 9: L1638-L1641
  • From Bloch Functions to Quantum Wells International J. Modern Physics B Harris Jr., J., S. 1990; 6 (4): 1149-1179
  • A High Frequency Pnp AlGaAs/InGaAs Heterojunction Bipolar Transistor with an Ultrathin Strained Base Electron. Lett. Liu, W., Hill, D., G., Harris Jr., J., S. 1990; 26: 2000-2002
  • Optical Anisotropy of Bi2Sr2CaCu208 Phys. Rev. Kim, J., H., Bozovic, I., Mitzi, D., B., Kapitulnik, A., Harris Jr., J., S. 1990; 10 (B41): 7251-7253
  • Impact of Surface Layer on In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors IEEE Electron Dev. Lttrs Pao, Y., C., Nishimoto, C., Riaziat, M., Majidi-Ahy, R., Bechtel, N., G., Harris Jr., J., S. 1990; 7 (11): 315-313
  • Characterization of Surface-Undoped In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors IEEE Tran. Electron. Dev. Pao, Y., C., Nishimoto, C., K., Majidi-Ahy, R., Archer, J., Bechtel, N., G., Harris Jr., J., S. 1990; 10 (37): 2165-2170
  • In-Situ Growth of Single Crystal Bi2Sr2CanCun+1Ox Thin Films by Atomically Layered Epitaxy Eckstein, J., N., Bozovic, I., Schlom, D., G., Chen, Z., J., Harris Jr., J., S. 1990
  • Defect Structures in MBE Grown GaAs on Si Kim, S., D., Ma, T., Rek, Z., Harris Jr., J., S. 1990
  • Atomically Layered Heteroepitaxy of High Temperature Superconducting Thin Films: Metastable Phases and Superlattice Structures Eckstein, J., N., Bozovic, I., Dessonneck, K., E. von, Schlom, D., G., Harris Jr., J., S. 1990
  • 77K Photoluminescence Investigation of Residual Stress in MBE-Grown GaAs/Si Layers Adkisson, J., W., Harris, J., S., George, T., Weber, E., R. 1990
  • Influence of Ballistic Electrons on the Device Characteristics of Vertically Integrated Resonant Tunneling Diodes Appl. Phys. Lett Harris, J., S., Rascol, J., J. L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. 1990; 14 (58): 1482-1484
  • RESONANT TUNNELING OF 1-DIMENSIONAL ELECTRONS ACROSS AN ARRAY OF 3-DIMENSIONALLY CONFINED POTENTIAL WELLS SUPERLATTICES AND MICROSTRUCTURES Allee, D. R., Chou, S. Y., Harris, J. S., Pease, R. F. 1990; 7 (2): 131-134
  • Molecular Beam Epitaxy-a Path to Novel High Tc Superconductors Harris, J., S., Schlom, D., G., Eckstein, J., N., Bozovic, I., Chen, Z., J., Marshall, A., F. 1990
  • Two Selective Etching Solutions for GaAs on InGaAs and GaAs/AlGaAs on InGaAs J. Electrochem. Soc. Hill, D., G., Lear, K., L., Harris Jr., J., S. 1990; 9 (137): 2913-2914
  • Molecular Beam Epitaxial Growth of Layered Bi-Sr-Ca-Cu-O Compounds J. Cryst. Growth. Harris, J., S., Schlom, D., G., Marshall, A., F., Sizemore, J., T., Chen, Z., J., Eckstein, J., N. 1990: 361-375
  • Quantum Wells and Artificially Structured Materials for Non-Linear Optics Harris Jr., J., S., Fejer, M., M. 1990
  • Improved Design of AlAs/GaAs Resonant Tunneling Diodes Cheng, P., Harris Jr., J., S. 1990
  • A new Direct Method for Determining the Heterojunction Bipolar Transistor Equivalent Circuit Model Costa, D., Liu, W., Harris Jr., J., S. 1990
  • Optimization of Reflection Electro-Absorption Modulators Pezeshki, B., Thomas, D., Harris Jr., J., S. 1990
  • In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Bozovic, I., Eckstein, J., N., Schlom, D., G., Harris Jr., J., S. 1990
  • Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique Schlom, D., G., Marshall, A., F., Harris Jr., J., S., Bozovic, I., Eckstein, J., N. 1990
  • Comparison of Pnp AlGaAs/GaAs Heterojunction Bipolar Transistor with and Without Base Quasielectric Field Liu, W., Hill, D., Costa, D., Harris Jr., J., S. 1990
  • Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes Harris, J., S., Rascol, J., L., Martin, K., P., Carnahan, R., E., Higgins, R., J., Cury, L. 1990
  • From Bloch Functions to Quantum Wells Conductivity and Magnetism, The Legacy of Felix Bloch Harris Jr., J., S. edited by Little, William, A. World Scientific, Singapore. 1990: 23-53
  • Wannier-Stark Localization in a Strained InGaAs/GaAs Superlattice Appl. Phys. Lett. Pezeshki, B., Thomas, D., Harris Jr., J., S. 1990; 20 (57): 2116-2117
  • Uniform, High-Gain AlGaAs/In0.05Ga0.95As/GaAs P-n-p Heterojunction Bipolar Transistors by Dual Selective Etch Process IEEE Electron Device Lett. Hill, D., G., Lee, W., S., Ma, T., Harris Jr., J., S. 1990; 11: 425-427
  • Large Reflectivity Modulation Using InGaAs-GaAs IEEE Photon. Techn. Lett. Pezeshki, B., Thomas, D., Harris Jr., J., S. 1990; 2: 807-809
  • RESONANT TUNNELING DIODES FOR SWITCHING APPLICATIONS APPLIED PHYSICS LETTERS DIAMOND, S. K., Ozbay, E., Rodwell, M. J., Bloom, D. M., Pao, Y. C., Harris, J. S. 1989; 54 (2): 153-155
  • Effect of Emitter-Base Spacing on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Electron Device Letters Lee, W., S., Ueda, D., Ma, T., Pao, Y., C., Harris Jr., J., S. 1989: 200-202
  • The X-Valley Transport in GaAs/AlAs Triple Barrier Structures J. Appl. Phys. Cheng, P., Park, B., G., Kim, S., D., Harris Jr., J., S. 1989; 12 (65): 5199-5201
  • Influence of As4/Ga Flux Ratio on Be Incorporation in Heavily Doped GaAs Grown by Molecular Beam Epitaxy J. Crystal Growth Pao, Y., C., Franklin, J., Harris Jr., J., S. 1989: 301-304
  • GaAs/AlGaAs Power HBT on Silicon Substrate Electron. Lett. Ueda, D., Lee, W., S., Ma, T., Costa, D., Harris Jr., J., S. 1989; 19 (25): 1968-1269
  • Resonant Tunneling Diodes for Switching Applications Harris, J., S., Diamond, S., K., Özbay, E., Rodwell, M., J. W., Bloom, D., M., Pao, Y., C. 1989
  • Variation of the Spacer Layer Between two Resonant Tunneling Diodes Appl. Phys. Lett. Wolak, E., Park, B., G., Lear, K., L., Harris Jr., J., S. 1989: 1871-1873
  • Molecular Beam Epitaxy AlGaAs/GaAs Grown in the Presence of Hydrogen J. Crystal Growth Pao, Y., C., Liu, D., Harris Jr., J., S. 1989: 305-308
  • MBE Growth of High Critical Temperature Superconductors J. Crystal Growth Harris Jr., J., S., Eckstein, J., N., Eckstein, J., N., Schlom, D., G. 1989: 607-616
  • Effect of Bulk Recombination Current on the Current Gain of GaAs/AIGaAs Heterojunction Bipolar Transistors in GaAs-on-Si IEEE Electron Dev. Lett. Ma, T., Lee, W., S., Adkisson, J., Harris Jr., J., S. 1989; 10 (10): 458-460
  • AlGaAs/InGaAs Strained-Base PnP Heterojunction Bipolar Transistors Electron. Lett. Hill, D., G., Lee, W., S., Ma, T., Harris Jr., J., S. 1989: 993-995
  • Monolithically Integrated Fiber-Optic Front-End Receiver in GaAs on Si Technology Nasserbakht, N., Adkisson, J., W., Kamins, T., I., Wooley, B., A., Harris Jr., J., S. 1989
  • Microwave Characteristics of MBE Grown Resonant Tunneling Devices Owens, J., M., Halchin, D., J., Lear, K., L., Lee, W., S., Harris Jr., J., S. 1989
  • Improved Vertically Integrated Resonant Tunneling Diodes Park, B., G., Wolak, E., Lear, K., L., Harris Jr., J., S. 1989
  • Photonics Brief Lessons in High Technology: Understanding the End of this Century to Capitalize on the Next Harris, J., S. edited by Meindl, James, D. Portable Stanford, Stanford, CA. 1989: 31-61
  • Reduction of Gallium-Related Oval Defects J. Vac. Sci. & Technol. Schlom, D., G., Lee, W., S., Ma, T., Harris Jr., J., S. 1989; 2 (B7): 296-298
  • Many-Body Effects in the Luminescence Spectra of GaAs/AlGaAs Modulation Doped Heterostructures ACTA Physica Polonica Munnix, S., Bimberg, D., Mars, D., E., Miller, J., N., Larkins, E., C., Harris Jr., J., S. 1989: 33-37
  • Influence of the As:Ga Flux Ratio on Growth Rate, Interface Quality, and Impurity Incorporation in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy Appl. Phys. Lett. Köhrbröck, R., Munnix, S., Bimberg, D., Larkins, E., C., Harris Jr., J., S. 1989; 7 (54): 623-625
  • Growth Kinetics, Impurity Incorporation, Defect Generation, and Interface Quality of MBE-grown AlGaAs/GaAs Quantum Wells: Role of group III and group V Fluxes J. Vac. Sci. Technol. Munnix, S., Bauer, R., K., Bimberg, D., Harris Jr., J., S., Köhrbrück, R., Larkins, E., C. 1989; 4 (B7): 704-709
  • Umklapp Electron-Electron Scattering Resistivity in YBa2Cu3O7-x IEEE Elect. Dev. Lett. Harris, J., S., Hellman, E., S. 1989; 3 (10): 104-106
  • Observation of Extremely Large Quadratic Susceptibility at 9.6 - 10.8µm in Electric-field-biased AlGaAs Quantum Wells Phys, Rev. Lett. Fejer, M., M., Yoo, S., J. B., Byer, R., L., Harwit, A., Harris Jr., J., S. 1989; 1 (62): 1041-1044
  • Development of Molecular Beam Epitaxial Growth of High Temperature Superconducting Compounds Eckstein, J., N., Harris Jr., J., S., Schlom, D., G., Bozovic, I., von Dessoneck, K., E., Chen, Z., J. 1989
  • New Lateral Resonant Tunneling FETs Fabricated Using Molecular Beam Epitaxy and Ultra-High Resolution Electron Beam Lithography Chou, S., Y., Allee, D., R., Pease, R., F. W., Harris Jr., J., S. 1989
  • Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds Harris, J., S., Schlom, D., G., Eckstein, J., N., Bozovic, I., Marshall, A., F., Sizemore, J., T. 1989
  • The Effect of Si Doping in AlAs Barrier Layers of AlAs-GaAs-AlAs Double Barrier Resonant Tunneling Diodes Appl. Phys. Lett. Cheng, P., Harris Jr., J., S. 1989; 6 (55): 572-574
  • Phase Characterization of Dysprosium Barium Copper Oxide Thin Films Grown on Strontium Titanate by Molecular Beam Epitaxy J. Mater. Res. Hellman, E., S., Schlom, D., G., Marshall, A., F., Streiffer, S., K., Harris Jr., J., S., Beasley, M., R. 1989; 3 (4): 476-495
  • Fabrication of Resonant Tunneling Diodes for Integrated Circuit and Microwave Applications IEEE Electron Device Letters Harris, J., S., Diamond, S., K., Ozbay, E., Rodwell, M., J. W., Bloom, D., M., Pao, Y., C. 1989: 104-106
  • Epitaxial Growth of High Temperature Superconducting Thin Films J. Vac. Sci. & Technol. Harris, J., S., Eckstein, J., N., Schlom, D., G., Hellman, E., S., Dessonneck, K., E. von, Chen, Z., J. 1989; 2 (B7): 319-323
  • Elastic Scattering in Resonant Tunneling Devices With One Degree of Freedom J. of Superlattices and Microstructures Wolak, E., Shepard, K., Chou, S., Y., Harris Jr., J., S. 1989; 2 (5): 251-253
  • PROCESSING AND CHARACTERIZATION OF GAAS GROWN INTO RECESSED SILICON JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B ADKISSON, J. W., Kamins, T. I., Koch, S. M., Harris, J. S., Rosner, S. J., Reid, G. A., Nauka, K. 1988; 6 (2): 717-719
  • RESONANT TUNNELING OF ELECTRONS OF ONE OR 2-DEGREES OF FREEDOM APPLIED PHYSICS LETTERS Chou, S. Y., Wolak, E., Harris, J. S. 1988; 52 (8): 657-659
  • A LATERAL RESONANT TUNNELING FET SUPERLATTICES AND MICROSTRUCTURES Chou, S. Y., Wolak, E., Harris, J. S., Pease, R. F. 1988; 4 (2): 181-186
  • Limit Cycle Oscillations in Negative Differential Resistance Devices J. Appl. Phys. Hellman, E., S., Lear, K., L., Harris Jr., J., S. 1988; 5 (64): 2798-2800
  • Elastic Scattering Centers in Resonant Tunneling Diodes Appl. Phys. Lett. Harris, J., S., Wolak, E., Lear, K., L., Pitner, P., M., Hellman, E., S., Park, G., B. 1988; 3 (53): 201-203
  • Effect of Strain on the Band Structure of GaAs and In0.2Ga0.8As Appl. Phys. Lett. Harris, J., S., Hwang, J., Shih, C., K., Pianetta, P., Kubiak, G., D., Stulen, R., H. 1988; 4 (52): 308-310
  • A Lateral Resonant Tunneling Field-Effect Transistor Appl. Phys. Lett. Chou, S., Y., Harris Jr., J., S., Pease, R., F. W. 1988; 23 (52): 1982-1984
  • Flux Ratio Dependence of Growth Rate, Interface Quality, and Impurity Incorporation in MBE Grown AlGaAs/GaAs Quantum Wells Köhrbrück, R., Munnix, S., Bimberg, D., Larkins, E., C., Harris Jr., J., S. 1988
  • Molecular Beam Epitaxy and Deposition of High Tc Superconductors J. Vac. Sci. Technol. B Hellman, E., S., Schlom, D., G., Missert, N., Char, K., Harris Jr., J., S., Beasley, M., R. 1988; 2 (6): 799-803
  • (110)-Oriented GaAs MESFETs IEEE Elect. Dev. Lett. Pao, Y., C., Ou, W., Harris Jr., J., S. 1988; 3 (9): 119 - 123
  • Sodium Sulfide Treated (100) and Misoriented (110) GaAs Surfaces Harris, J., S., Liu, D., Larkins, E., C., Zhang, T., Chiang, T., T., LaRue, R., A. 1988
  • The Effect of Elastic Scattering Centers on the Current Voltage Characteristics of Double Barrier Resonant Tunneling Diodes Harris, J., S., Wolak, E., Lear, K., L., Pitner, P., M., Park, G., B., Hellman, E., S. 1988
  • Heteronucleation Onto Si Surfaces Harris, J., S., Hull, R., Bean, J., C., Chand, N., Leibenguth, R., E., Bahnck, D. 1988
  • Growth of GaAs on Si in Masked, Etched Trenches Adkisson, J., W., Kamins, T., I., Koch, S., M., Harris Jr., J., S., Rosner, S., J., Nauka, K. edited by Choi, H., K., Hull, R., Ishiwars, H. 1988
  • Influence of Buffer Layer Thickness on DC Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors Grown on Silicon Substrates IEEE Electron Device Lett. Ma, T., Ueda, D., Lee, W. S., Adkisson, J., Harris Jr., J., S. 1988; 12 (9): 657-659
  • Hot Electron Transport Parallel to Strong Magnetic Fields in Gallium Arsenide Solid State Electronics Hellman, E., S., Harris Jr., J., S. 1988; 31 (3/4): 785-788
  • Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFETs for Gate Lengths to 550 Å IEEE Electron Device Lett. de la Houssaye, P., R., Allee, D., R., Pao, Y., C., Schlom, D., G., Harris Jr., J., S., Pease, R., F. W. 1988; 3 (9): 148-150
  • Monolithic Integration of GaAs/AlAs Resonant Tunnel Diode Load and GaAs Enhancement-Mode MESFET Drivers for Tunnel Diode FET Logic Gates Lear, K., L., Yoh, K., Harris Jr., J., S. 1988
  • High Carrier Densities in GaAs/AlGaAs Modulation n-Doped Quantum Wells: From One- to Two-Component Plasma Munnix, S., Bimberg, D., Mars, D., E., Miller, J., N., Larkins, E., C., Harris Jr., J., S. 1988
  • Summary Abstract: MBE Growth of Tunable Multi-Layer Interference Optical Modulators J. Vac. Sci. Technol. B. Yoffe, W., Schlom, D., G., Harris Jr., J., S. 1988; 2 (6): 688
  • Molecular Beam Epitaxy of Layered Dy-Ba-Cu-O Compounds Appl. Phys. Lett. Schlom, D., G., Eckstein, J., N., Hellman, E., S., Streiffer, S., K., Harris Jr., J., S., Beasley, M., R. 1988; 17 (53): 1660-1662
  • Substrate Surface Structure and Nucleation Phenomena in Epitaxial Growth of GaAs on Vicinal Si (100) Substrates Hull, R., Koch, S., M., Harris Jr., J., S. 1988
  • Sub-100 nm Gate Length GaAs MESFETs and MODFETs Fabricated by a Combination of Molecular Beam Epitaxy and Electron Beam Lithography Allee, R., Houssaye, P., R. de la, Schlom, D., G., Harris Jr., J., S., Pease, R., F. W. 1988
  • Room-Temperature Observation of Resonant Tunneling Through a AlGaAs/GaAs Quasi-Parabolic Quantum Well Grown by MBE Appl. Phys. Lett. Chou, S., Y., Harris Jr., J., S. 1988; 17 (52): 1422-1424
  • Sulfur Incorporation in Undoped High Purity n-Type GaAs Grown by Molecular Beam Epitaxy Harris, J., S., Lee, B., Kim, M., H., Bose, S., S., Stillman, G., E., Larkins, E., C. 1988
  • Spatial Inhomogeneities of the Luminescence and Electrical Properties of MBE Grown GaAs on Si Reid, A., Nauka, K., Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1988
  • Picosecond Pulsing and Sampling by GaAs Photodetectors Fabricated on Silicon Substrates Harris, J., S., Morse, J., D., Pocha, M., D., Dutton, R., W., Anderson, G., D., Adkisson, J., W. 1988
  • Molecular Beam Epitaxy of Layered DY-BA-CU-O Compounds Schlom, D., G., Eckstein, J., N., Hellman, E., S., Webb, C., Turner, F., Harris Jr., J., S. 1988
  • GaAs/Si Nucleation and Buffer Layer Growth Koch, S., M., Hull, R., Rosner, S., J., Harris Jr., J., S. 1988
  • Characterization of AlGaAs and GaAs Materials and Interfaces Grown on Misoriented (110) GaAs by MBE Larkins, E., C., Liu, D., Pao, Y., C., Lin, M., J., Yoffe, G., W., Harris Jr., J., S. 1988
  • Summary Abstract: Growth of GaAs and AlGaAs on misoriented (110) GaAs by Molecular Beam Epitaxy J. Vac. Sci. Technol. B Larkins, E., C., Pao, Y., C., Liu, D., Lin, J., Yoffe, G., Harris Jr., J., S. 1988; 2 (6): 636-637
  • Deep Level Transient Spectroscopy Study of GaAs Surface States Treated With Inorganic Sulfides Appl. Phys. Lett. Liu, D., Zhang, T., LaRue, R., A., Harris Jr., J., S., Sigmon, T., W. 1988; 12 (53): 1059-1061
  • Characterization of Al0.25Ga0.75As Grown by Molecular Beam Epitaxy J. Vac. Sci. Technol. B Harris, J., S., Lin, M., J., Larkins, E., C., Pao, Y., C., Liub, D., Yoffe, G. 1988; 2 (6): 631-635
  • OBSERVATION OF STARK SHIFTS IN QUANTUM-WELL INTERSUBBAND TRANSITIONS APPLIED PHYSICS LETTERS Harwit, A., Harris, J. S. 1987; 50 (11): 685-687
  • INFRARED TRANSMISSION SPECTROSCOPY OF GAAS DURING MOLECULAR-BEAM EPITAXY JOURNAL OF CRYSTAL GROWTH Hellman, E. S., Harris, J. S. 1987; 81 (1-4): 38-42
  • THE GROWTH OF GAAS ON SI BY MBE JOURNAL OF CRYSTAL GROWTH Koch, S. M., Rosner, S. J., Hull, R., Yoffe, G. W., Harris, J. S. 1987; 81 (1-4): 205-213
  • POLYNOMIAL KINETIC-ENERGY APPROXIMATION FOR DIRECT-INDIRECT HETEROSTRUCTURES SUPERLATTICES AND MICROSTRUCTURES Hellman, E. S., Harris, J. S. 1987; 3 (2): 167-169
  • Complementary MODFET Circuits Consisting of Pseudomorphic N-MODFET and Double Heterojunction P-MODFET by MBE, IEDM Washington, DC Yoh, K., Harris Jr., J., S. 1987: 892
  • Modulation of Light by Electrically Tunable Multi-Layer Interference Filter Appl. Phys. Lett. Yoffe, G., W., Schlom, D., G., Harris Jr., J., S. 1987; 23 (51): 1876-1878
  • Determination of the Natural Valence-Band Offset in InxGa1-xAs System Appl. Phys. Lett. Hwang, J., Pianetta, P., Shih, C., K., Spicer, W., E., Pao, Y., C., Harris Jr., J., S. 1987; 20 (51): 1632 - 1634
  • The Nucleation and Growth of GaAs on Si Harris Jr., J., S., Koch, S., M., Rosner, S., J. 1987
  • Nucleation of GaAs on Vicinal Si(100) Surfaces Hull, R., Fischer-Colbrie, A., Koch, S., M., Harris Jr., J., S. 1987
  • Relationship Between Substrate Cleaning, Surface Structure and Nucleation Phenomena in Heteroepitaxial Growth on Si extended Abstracts of Electrochemical, Materials Research Society Meeting, Honolulu, Hawaii Hull, R., Bean, J., C., Leibenguth, R., Koch, S., M., Harris Jr., J., S. 1987
  • Device and material characterization of molecular-beam epitaxial (110) GaAa/AlGaAs J. Electron. Mat. Pao, Y., C., Gabrial, N., Liu, D., Harris Jr., J., S., Parechanian, L., Webber, E., R. 1987; 4 (16): A16
  • A p-Channel Strained Quantum Well Modulation Doped Field Effect Transistor Extended Abstracts of the Japan Society of Applied Physics Meeting, Tokyo Yoh, K., Harris Jr., J., S. 1987; 804.83
  • Sub-100 nm Gate Length GaAs MESFETs Fabricated by Molecular Beam Epitaxy and Electron Beam Lithography Allee, D., R., Houssaye, P., R. de la, Schlom, D., G., Langley, B., W., Harris Jr., J., S., Pease, R., F. W. 1987
  • Deep Electron Traps in MBE GaAs on Si Nauka, K., Reid, G., A., Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1987
  • Growth of High Tc Superconducting Thin Films using Molecular Beam Epitaxy Techniques Appl. Phys. Lett. Harris, J., S., Webb, C., Weng, S., L., Eckstein, J., N., Missert, N., Char, K. 1987; 15 (51): 1191
  • Comment on Observation of a Negative Differential Resistance due to Tunneling through a Single Barrier into a Quantum Well Appl. Phys. Lett. Wolak, E., Harwit, A., Harris Jr., J., S. 1987; 22 (50)
  • The Influence of Substrates on Implanted Layer Characteristics Johannessen, J., S., Harris Jr., J., S., Rensch, D., B., Winston, H., V., Hunter, A., T., Kocot, C. 1987
  • Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1987
  • Infra-Red Transmission Spectroscopy of GaAs during Molecular Beam Epitaxy J. Cryst. Growth Hellman, E., S., Harris Jr., J., S. 1987; 81: 38-42
  • GaAs with Very Low Acceptor Impurity Background Grown by Molecular Beam Epitaxy J. Cryst. Growth Larkins, E., C., Hellman, E., S., Schlom, D., G., Harris Jr., J., S., Kim, M., H., Stillman, G., E. 1987; 81: 344-348
  • POLARON TRANSPORT IN QUASI-ONE-DIMENSIONAL SEMICONDUCTOR HETEROSTRUCTURES SURFACE SCIENCE Hellman, E. S., Harris, J. S. 1986; 174 (1-3): 459-465
  • ENERGY-MOMENTUM RELATION FOR POLARONS CONFINED TO ONE DIMENSION PHYSICAL REVIEW B Hellman, E. S., Harris, J. S. 1986; 33 (12): 8284-8290
  • Calculated Quasi-Eigenenstates and Quasi-Eigenenergies of Quantum Well Superlattices in an Applied Field J. Appl. Phys. Harwit, A., Harris Jr., J., S., Kapitulnik, A. 1986; 9 (60): 3211-13
  • Microstructure of Thin Layers of MBE-Grown GaAs on Si Substrates Rosner, S., J., Koch, S., M., Laderman, S., Harris Jr., J., S. edited by Fan, J., C. C., Poate, J., M. 1986
  • Stanford University: Stanford Electronics Laboratory and Microwave Ginzton Laboratory Forthieth Anniversary of the Joint Services Electronics Program Harris, S., E., Harris Jr., J., S. edited by Shostak, A. ANSER, Arlington, VA. 1986
  • Surface Effect-Induced Fast Be Diffusion in Heavily Doped GaAs Grown by Molecular Beam Epitaxy J. Appl. Phys. Harris, J., S., Pao, Y., C., Hierl, T., Cooper, T. 1986; 1 (60): 201-204
  • Reduction of the Acceptor Impurity Background in GaAs Grown by Molecular Beam Epitaxy Appl. Phys. Lett. Larkins, E., C., Hellman, E., S., Schlom, D., G., Harris Jr., J., S., Kim, M., H., Stillman, G., E. 1986; 7 (49): 391-3
  • Mechanism of Current Modulation by Optic Phonons in Heterojunction Tunneling Experiments Phys. Rev. B Harris, J., S., Hanna, C., B., Hellman, E., S., Laughlin, R., B. 1986; 8 (34): 5475-83
  • Atomic Structure of the GaAs/Si Interface Appl. Phys. Lett. Hull, R., Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1986; 25 (49): 1714-16
  • Material Effects on the Cracking Efficiency of Molecular Beam Epitaxy Arsenic Cracking Furnaces J. Vac. Sci. Technol. Lee, R., L., Schaffer, W., J., Chai, Y., G., Liu, D., Harris Jr., J., S. 1986; 2 (B4): 568-70
  • Effect of Hydrogen on Undoped and Lightly Si-Doped Molecular Beam Epitaxial GaAs Layers Appl. Phys. Lett. Pao, Y., C., Liu, D., Lee, W., S., Harris Jr., J., S. 1986; 19 (48): 1291-3
  • Nucleation and Initial Growth of GaAs on Si Substrate Appl. Phys. Lett. Rosner, S., J., Koch, S., M., Harris Jr., J., S. 1986; 26 (49): 1764-66
  • Molecular Beam Epitaxy of Gallium Arsenide using Direct Radiative Substrate Heating J. Vac. Sci. Technol. Hellman, E., S., Pitner, P., M., Harwit, A., Liu, D., Yoffe, G., W., Harris Jr., J., S. 1986; 2 (B4): 574-7
  • The Growth of GaAs on Si by Molecular Beam Epitaxy Koch, S., M., Rosner, S., J., Schlom, D., G., Harris Jr., J., S. edited by Fan, J., C. C., Poate, J., M. 1986
  • One Dimensional Polaron Effects and Current Inhomogeneities in Sequential Phonon Emission Physica Hellman, E., S., Harris Jr., J., S., Hanna, C., B., Laughlin, R., B. 1985; 134B: 41-46
  • Heterojunction Bipolar Transistors J. J. Appl. Phys Harris Jr., J., S., Miller, D., L., Asbeck, P., M. 1982; 22: 379
  • GaAs/AlGaAs Tunnel Junctions for Multiple Bandgap Solar Cells J. Appl. Phys. Miller, D., L., Zehr, S., W., Harris Jr., J., S. 1982; 53: 744
  • Heterojunction Bipolar Transistors Harris Jr., J., S., Miller, D., L., Asbeck, P., M. 1982
  • An MBE AlGaAs/GaAs Heterojunction Bipolar Transistor Miller, D., L., Harris Jr., J., S., Asbeck, P., M. edited by Sugano, T. 1981
  • (Ga,Al)As/GaAs Bipolar Transistors for Digital Integrated Circuits Asbeck, P., M., Miller, D., L., Milano, R., A., Harris Jr., J., S., Kaelin, G., R., Zucca, R. 1981
  • High Performance AlGaAs/GaAs Heterojunction CCDs for Imaging Applications Adv. Astronomical Sciences Harris Jr., J., S., Reitz, L., R. 1981; 45: 197
  • High Performance AlGaAs/GaAs Heterojunction CCDs for Imaging Applications Harris Jr., J., S., Reitz, L., R. 1981
  • Measurement of Isotype Heterojunction Barriers by C-V Profiling Appl. Phys. Lett. Kroemer, H., Chien, W., Yi, Harris Jr., J., S., Edwall, D., D. 1980; 36: 295
  • Low Bandgap (0.7 to 1.1 eV) Solar Cells in the GaAlAsSb/GaSb System Liu, Y., Z., Yang, H., T., Harris Jr., J., S. 1980
  • MBE GaAs Heteroface Solar Cells Grown on Ge Appl. Phys. Lett. Miller, D., L., Harris Jr., J., S. 1980; 37: 1104
  • A Backside-Illuminated Imaging AlGaAs/GaAs Charge Coupled Device Appl. Phys. Lett. Liu, Y., Z., Deyhimy, I., Anderson, R., J., Milano, R., A., Cohen, M., J., Harris Jr., J., S. 1980; 37: 803
  • Solar Cell Characterization at Rockwell International Cohen, M., J., Cape, J., A., Paul, M., D., Miller, D., L., Harris Jr., J., S. 1980
  • Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications Cape, J., A., Harris Jr., J., S., Wiczer, J. 1980
  • A Non-Lattice Matched Monolithic Multicolor Solar Cell Harris, J., S., Zehr, S., W., Yang, H., T., Yang, J., J. J., Coleman, J., J., Miller, D., L. 1980
  • Schottky Barrier Formation in Polycrystal GaAs J. Vac. Sci. Technol. Cohen, M., J., Paul, M., D., Miller, D., L., Waldrop, J., R., Harris Jr., J., S. 1980; 17: 899
  • GaAs and Related Heterojunction Charge Coupled Devices IEEE Trans. Electron Dev. Deyhimy, I., Eden, R., C., Harris Jr., J., S. 1980; ED-27: 1172
  • Barrier Height Enhancement in Heterojunction Schottky Barrier Solar Cells IEEE Trans. Electron Dev Yang, H., T., Shen, Y., D., Edwall, D., D., Miller, D., L., Harris Jr., J., S. 1980; ED-27: 851
  • Monolithic Multicolor Solar Conversion Harris, J., S., Zehr, S., W., Yang, H., T., Coleman, J., J., Miller, D., L., Yang, J., J. J. 1980
  • Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications Wiczer, J., J., Cape, J., A., Harris Jr., J., S. 1980
  • Heterojunction Schottky Barrier Solar Cells Yang, H., T., Miller, D., L., Shen, Y., D., Edwall, D., D., Harris Jr., J., S. 1980
  • Observation of Charge Storage and Charge Transfer in a GaAlAsSb/GaSb CCD Appl. Phys. Lett Liu, Y., Z., Deyhimy, I., Harris Jr., J., S., Anderson, R., J., Appelbaum, J. 1980; 36: 458
  • A 500 MHz GaAs Charge Coupled Device Appl. Phys. Lett. Deyhimy, I., Eden, R., C., Edwall, D., D., Anderson, R., J., Harris Jr., J., S. 1980; 36: 151
  • Performance Losses in High Efficiency Monolithic Multijunction Solar Cells Zehr, S., W., Cape, J., A., Harris Jr., J., S. 1980
  • Charge Coupled Devices in Gallium Arsenide Deyhimy, I., Anderson, R., J., Eden, R., C., Harris Jr., J., S. 1980
  • Analog Signal Processing Complement to GaAs Digital ICs Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979
  • Reduced Geometry GaAs CCD for High Speed Signal Processing J. J. Appl. Phys Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979; 19: 269
  • Minimum Al0.5Ga0.5As-GaAs Heterojunction Width Determined by Sputter-Auger Technique Appl. Phys. Lett Garner, C., M., Su, C., Y., Spicer, W., E., Edwood, P., D., Miller, D., Harris, J., S. 1979; 34: 610
  • High Efficiency AlGaAs/GaAs Concentrator Solar Cells Appl. Phys. Lett. Sahai, R., Edwall, D., D., Harris, J., S. 1979; 34: 147
  • Reduced Geometry GaAs CCD for High Speed Signal Processing Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979
  • Intercell Ohmic Contacts for High Efficiency Multijunction Solar Converters Stanley, W., Zehr, Miller, D., L., Harris Jr., J., S. 1979
  • 20 KW Gallium Arsenide Photovoltaic Dense Array for Central Receiver Concentrator Applications Cape, J., A., Sahai, R., Harris, J., S. 1979
  • Application of GaAs CCD's to High Speed Signal Processing Deyhimy, I., Harris Jr., J., S., Eden, R., C. 1979
  • An Ultra High Speed GaAs CCD Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J., Edwall, D., D. 1979
  • 259 Gate GaAs CCD Shift Register for High Speed Applications Deyhimy, I., Harris Jr., J., S., Eden, R., C., Anderson, R., J. 1979
  • Interface Studies of Al Gal As-GaAs Heterojunctions J. Appl. Phys. Harris, J., S., Garner, C., M., Su, C., Y., Shen, Y., D., Lee, C., S., Pearson, G., L. 1979; 50: 3383
  • GaAlAs/GaAs Heterojunction Schottky Barrier Gate CCD Liu, Y., Z., Deyhimy, I., Anderson, R., J., Harris Jr., J., S., Tomasetta, L., R. 1979
  • Development of Stacked Multiple Bandgap Solar Cells Harris, J., S., Ruth, R., P., Zehr, S., W., Coleman, J., J., Dupuis, R., D., Yang, H., T. 1979
  • CCD's in GaAs and Related III-V Compounds Deyhimy, I., Harris, J., S., Edwall, D., D. edited by Wolfe, C., M. 1978
  • 1.0-1.4µm High-Speed Avalanche Photodiodes Appl. Phys. Lett Law, H., D., Tomasetta, L., R., Nakano, K., Harris, J., S. 1978; 33: 416
  • Ionization Coefficients of Ga0.72Al0.28Sb Avalanche Photodetectors Appl. Phys. Lett Law, H., D., Nakano, K., Tomasetta, L., R., Harris, J., S. 1978; 33: 948
  • High Efficiency AlGaAs/GaAs Concentrator Solar Cell Development Sahai, R., Edwall, D., D., Harris, J., S. 1978
  • Carrier Transport at Grain Boundaries in Polycrystalline GaAs Cohen, M., J., Harris, J., S., Waldrop, J., R. 1978
  • GaAs Charge Coupled Devices Appl. Phys. Lett Deyhimy, I., Harris, J., S., Eden, R., C., Edwall, D., D., Anderson, S., J., Bubulac, L., O. 1978; 32: 383
  • High Speed GaAs CCD Deyhimy, I., Harris, J., S., Eden, R., C., Edwall, D., D., Anderson, R., J. 1978
  • (SN)x-GaAs Polymer Semiconductor Solar Cells Appl. Phys. Lett Cohen, M., J., Harris, J., S. 1978; 33: 812
  • GaAs CCD with High Transfer Efficiency Deyhimy, I., Harris, J., S., Eden, R., C. 1978
  • Spectrally Split Tandem Cell Converter Studies Cape, J., A., Harris, J., S., Sahai, R. 1978
  • GaAlAsSb/ GaSb Alloys: Material Preparation and Applications to Optoelectronic Devices Law, H., D., Harris, J., S., Wong, K., C., Tomasetta, L., R. edited by Wolfe, C., M. 1978
  • A Solar Power System with Gallium Arsenide Solar Cells Madewell, J., F., Nussberger, A., A., Harris, J., S. 1977
  • Growth and Evaluation of LPE Graded Composition Al Gal As Layers for High Efficiency Graded Bandgap Solar Cells J. Electronic Materials Sahai, R., Harris, J., S., Edwall, D., D., Eisen, F., H. 1977; 6: 645
  • Gallium Arsenide Concentrator System Miller, R., S., Harris, J., S. 1977
  • Auger Depth Profiling of Au-AlxGa1-xAs Interfaces and LPE AlxGa1-x-GaAs Heterojunctions J. Vac. Sci. Technol Garner, C., M., Shen, Y., D., Kim, J., S., Pearson, G., L., Spicer, W., E., Harris, J., S. 1977; 14: 985
  • Auger Profiling of 'Abrupt' LPE Al Gal -xAs/GaAs Heterojunctions J. Appl. Phys Garner, C., M., Shen, Y., D., Kim, J., S., Pearson, G., L., Spicer, W., E., Harris, J., S. 1977; 48: 3147
  • AlGaSb Alloys for 1.0µm to 1.8µm Heterojunction Devices Anderson, S., H., Scholl, F., Harris, J., S. edited by Eastman, L., F. 1977
  • High Efficiency Thin Window Ga1-xAlx As/GaAs Solar Cells Sahai, R., Edwall, D., D., Cory, E., Harris, J., S. 1976
  • Non-destructive Determination of Energy Gap Grading in Thin Films by Optical Transmission Measurements J. Vac. Sci. Technol Hall, W., F., Tennant, W., E., Cape, J., A., Harris, J., S. 1975; 13: 914
  • The Phase Diagram and its Application to the Liquid Phase Epitaxial Growth of Pb1-xSnxTe J. of Crystal Growth Harris, J., S., Longo, J., T., Gertner, E., R., Clarke, J., E. 1975; 28: 334
  • Potential Profiling Across Semiconductor Junctions by Auger Electron Spectroscopy in the Scanning Electron Microscope J. Appl. Phys Waldrop, J., R., Harris, J., S. 1975; 46: 5214
  • Double Heterojunction Photocathode Devices CRC Crit. Rev. Sol. State Sci Sahai, R., Harris, J., S., Eden, R., C., Bubulac, L., O., Chu, J., C. 1975; 5: 565
  • High Efficiency Graded Bandgap n/p AlxGa1-xAs Solar Cells Hutchby, J., A., Sahai, R., Harris, J., S. 1975
  • The Influence of Radiation Damage on Ion Implantation Harris, J., S., Eisen, F., H. 1974
  • Properties of Tellurium Implanted Gallium Arsenide Ion Implantation in Semiconductors and Other Materials Eisen, F., H., Harris, J., S., Welch, B., Pashley, R., D., Sigurd, D., Mayer, J., W. edited by Crowder, B., L. Plenum, New York. 1973: 631
  • Material Properties of Solution Grown Pb1-x SnxTe J. Nonmetals Longo, J., T., Gertner, E., R., Harris, J., S. 1973; 1: 321
  • Properties of Tellurium Implanted GaAs Eisen, F., H., Harris, J., S., Welch, B., Pashley, R., D., Sigurd, D., Mayer, J., W. 1972
  • Fluorine Ion Implantation Profiles in Gallium Arsenide as Determined by Auger Electron Spectroscopy Appl. Phys. Lett Harris, J., S., Harris, J., M., Marcus, H., L. 1972; 21: 598
  • Influence of Implantation Temperature and Surface Protection on Tellurium Implantation in GaAs Appl. Phys. Lett Harris, J., S., Eisen, F., H., Welch, B., Haskell, J., D., Pashley, R., D., Mayer, J., W. 1972; 21: 601
  • Material Properties of Solution Grown Pb1-x SnxTe Longo, J., T., Gertner, E., R., Harris, J., S. 1972
  • Improved Surface Properties of Solution Grown GaAs and Pb1-xSnxTe Epitaxial Layers: A New Technique J. Crystal Growth Longo, J., T., Harris, J., S., Gertner, E., R., Chu, J., C. 1972; 15: 107
  • The Effects of Dose Rate and Implantation Temperature on Lattice Damage and Electrical Activity in Ion Implanted GaAs Harris, J., S. edited by I., J. 1971
  • The Effects of Uniaxial Stress on the Electrical Resistivity and the Gunn Effect in n-Type GaAs Phys. Rev.B Harris, J., S., Moll, J., L., Pearson, G., L. 1970; 1: 1660
  • The Annealing of Damage in Ion Implanted Gallium Arsenide Radiation Effects Harris, J., S., Eisen, F. 1970; 7: 123
  • Homogeneous Solution Grown Epitaxial GaAs by Tin Doping Solid State Electron Harris, J., S., Snyder, W., L. 1969; 12: 337
  • Ohmic Contacts to Solution Grown Gallium Arsenide J. Appl. Phys Harris, J., S., Nannichi, Y., Pearson, G., L. 1969; 40: 4575
  • The Effects of Uniaxial Stress on the Electrical Resistivity of n-Type Boat Grown and Liquid Epitaxial GaAs IEEE Trans. Elect Dev Harris, J., S., Snyder, W., L., Moll, J., L., Pearson, G., L. 1968; ED-14: 690