James Harris
James and Elenor Chesebrough Professor in the School of Engineering, Emeritus
Electrical Engineering
Web page: http://ee.stanford.edu/~harris/
Bio
Harris utilizes molecular beam epitaxy (MBE) of III-V compound semiconductor materials to investigate new materials for electronic and optoelectronic devices. He utilizes heterojunctions, superlattices, quantum wells, and three-dimensional self-assembled quantum dots to create metastable engineered materials with novel or improved properties for electronic and optoelectronic devices. His early work in the 1970's demonstrating a practical heterojunction bipolar transistor led to their application in every mobile phone today and record setting solar cell efficiency. He has recently focused on three areas: 1) integration of photonic devices and micro optics for creation of new minimally invasive bio and medical systems for micro-array and neural imaging and 2) application of nanostructures semiconductors for the acceleration of electrons using light, a dielectric Laser Accelerator (DLA), and 3) novel materials and nano structuring for high efficiency solar cells and photo electrochemical water splitting for the generation of hydrogen.
Academic Appointments
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Professor Emeritus, Electrical Engineering
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Member, Bio-X
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Affiliate, Precourt Institute for Energy
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Affiliate, Stanford Woods Institute for the Environment
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Member, Wu Tsai Neurosciences Institute
Honors & Awards
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Jun-ichi Nishizawa Medal, IEEE (2023)
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Elected Member, National Academy of Engineering (2011)
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Aristotle Award, Semiconductor Research Corporation (2013)
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Al Cho MBE Award, International MBE Conference (2014)
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MBE Innovator Award, International MBE Conference (2008)
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Alexander Humboldt Senior Research Prize, Alexander Humboldt (1999)
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Morris Liebmann Award, IEEE (2000)
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Welker Medal, International Symposium on Compound Semiconductors (2000)
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Fellow, IEEE (1988)
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Fellow, American Physical Society (1992)
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Fellow, Optical Society of America (2005)
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Fellow, Materials Research Society (2009)
Program Affiliations
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Stanford SystemX Alliance
Professional Education
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PhD, Stanford University, Electrical Engineering (1969)
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MS, Stanford University, Electrical Engineering (1965)
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BS, Stanford University, Electrical Engineering (1964)
2023-24 Courses
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Independent Studies (9)
- Advanced Reading and Research
SCCM 499 (Win) - Curricular Practical Training
APPPHYS 291 (Sum) - Curricular Practical Training
PHYSICS 291 (Sum) - Directed Studies in Applied Physics
APPPHYS 290 (Aut, Win, Spr, Sum) - Graduate Independent Study
MATSCI 399 (Aut, Win, Spr, Sum) - Master's Research
MATSCI 200 (Aut, Win, Spr, Sum) - Ph.D. Research
MATSCI 300 (Aut, Win, Sum) - Practical Training
MATSCI 299 (Aut, Win, Spr, Sum) - Research
PHYSICS 490 (Aut, Win, Spr, Sum)
- Advanced Reading and Research
All Publications
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Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes
ACS PHOTONICS
2019; 6 (4): 915–23
View details for DOI 10.1021/acsphotonics.8b01553
View details for Web of Science ID 000465188900015
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Silicon nitride waveguide as a power delivery component for on-chip dielectric laser accelerators
OPTICS LETTERS
2019; 44 (2): 335–38
Abstract
We study the weakly guided silicon nitride waveguide as an on-chip power delivery solution for dielectric laser accelerators (DLAs). We focus on the two main limiting factors on the waveguide network for DLAs: the optical damage and nonlinear characteristics. The typical delivered fluence at the onset of optical damage is measured to be ∼0.19 J/cm2 at a 2 μm central wavelength and 250 fs pulse width. This damage fluence is lower than that of the bulk Si3N4 (∼0.65 J/cm2), but higher than that of bulk silicon (∼0.17 J/cm2). We also report the nonlinearity-induced spectrum and phase variance of the output pulse at this pulse duration. We find that a total waveguide length within 3 mm is sufficient to avoid significant self-phase modulation effects when operating slightly below the damage threshold. We also estimate that one SiNx waveguide can power 70 μm silicon dual pillar DLAs from a single side, based on the results from the recent free-space DLA experiment.
View details for DOI 10.1364/OL.44.000335
View details for Web of Science ID 000455620100039
View details for PubMedID 30644894
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Improving characterization capabilities in new single-photon avalanche diode research.
The Review of scientific instruments
2019; 90 (4): 043108
Abstract
Many novel and promising single-photon avalanche diodes (SPADs) emerged in recent years. However, some of them may demonstrate a very high dark count rate, even tens of megahertz, especially during the development phase or at room temperature, posing new challenges to device characterization. Gating operation with a width of 10 ns can be used to suppress the dark counts not coincident with the photon arriving time. However, as a side effect of the fast-gating operation, the gating response could be much higher than the avalanche signal and is usually removed by various circuit-based cancellation techniques. Here, we present an alternative method. A high-speed digital storage oscilloscope (DSO) is used to extract the weak avalanche signals from the large gating response background by waveform subtraction in software. Consequently, no complex circuit and precise tuning for each SPAD are needed. The avalanche detection threshold can be reduced to 5% of the full vertical scale of the DSO or 5 mV, whichever is greater. The timing resolution can be better than 2 ps for typical avalanche signals. Optical alignment and calibration are easy. The feasibility of on-wafer test with an RF probe station is discussed. All the advantages and features listed above make this method very useful in new SPAD research.
View details for PubMedID 31043052
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Integrated photonics for NASA applications
SPIE-INT SOC OPTICAL ENGINEERING. 2019
View details for DOI 10.1117/12.2509808
View details for Web of Science ID 000468808800009
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Electrically Tunable, CMOS-Compatible Metamaterial Based on Semiconductor Nanopillars
ACS PHOTONICS
2018; 5 (11): 4702–9
View details for DOI 10.1021/acsphotonics.8b01383
View details for Web of Science ID 000451496500065
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Epsilon-Near-Zero Si Slot-Waveguide Modulator
ACS PHOTONICS
2018; 5 (11): 4484–90
View details for DOI 10.1021/acsphotonics.8b00945
View details for Web of Science ID 000451496500039
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Design of a tapered slot waveguide dielectric laser accelerator for sub-relativistic electrons
OPTICS EXPRESS
2018; 26 (18): 22801–15
Abstract
We propose a dielectric laser accelerator design based on a tapered slot waveguide structure for sub-relativistic electron acceleration. This tapering scheme allows for straightforward tuning of the phase velocity of the accelerating field along the propagation direction, which is necessary for maintaining synchronization with electrons as their velocities increase. Furthermore, the non-resonant nature of this design allows for better tolerance to experimental errors. We also introduce a method to design this continuously tapered structure based on the eikonal approximation, and give a working example based on realistic experimental parameters.
View details for DOI 10.1364/OE.26.022801
View details for Web of Science ID 000443431400037
View details for PubMedID 30184935
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Elements of a dielectric laser accelerator
OPTICA
2018; 5 (6): 687–90
View details for DOI 10.1364/OPTICA.5.000687
View details for Web of Science ID 000435967000004
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Pile-up correction in characterizing single-photon avalanche diodes of high dark count rate
OPTICAL AND QUANTUM ELECTRONICS
2018; 50 (6)
View details for DOI 10.1007/s11082-018-1517-x
View details for Web of Science ID 000434313500002
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On-Chip Laser-Power Delivery System for Dielectric Laser Accelerators
PHYSICAL REVIEW APPLIED
2018; 9 (5)
View details for DOI 10.1103/PhysRevApplied.9.054017
View details for Web of Science ID 000433002200001
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Phase-dependent laser acceleration of electrons with symmetrically driven silicon dual pillar gratings
OPTICS LETTERS
2018; 43 (9): 2181–84
Abstract
We present the demonstration of phase-dependent laser acceleration and deflection of electrons using a symmetrically driven silicon dual pillar grating structure. We show that exciting an evanescent inverse Smith-Purcell mode on each side of a dual pillar grating can produce hyperbolic cosine acceleration and hyperbolic sine deflection modes, depending on the relative excitation phase of each side. Our devices accelerate sub-relativistic 99.0 keV kinetic energy electrons by 3.0 keV over a 15 μm distance with accelerating gradients of 200 MeV/m with 40 nJ, 300 fs, 1940 nm pulses from an optical parametric amplifier. These results represent a significant step towards making practical dielectric laser accelerators for ultrafast, medical, and high-energy applications.
View details for DOI 10.1364/OL.43.002181
View details for Web of Science ID 000431179400061
View details for PubMedID 29714784
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Carrier-selective interlayer materials for silicon solar cell contacts
JOURNAL OF APPLIED PHYSICS
2018; 123 (14)
View details for DOI 10.1063/1.5020056
View details for Web of Science ID 000430014600001
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y Spatiotemporal characteristics of retinal response to network-mediated photovoltaic stimulation
JOURNAL OF NEUROPHYSIOLOGY
2018; 119 (2): 389–400
Abstract
Subretinal prostheses aim at restoring sight to patients blinded by photoreceptor degeneration using electrical activation of the surviving inner retinal neurons. Today, such implants deliver visual information with low-frequency stimulation, resulting in discontinuous visual percepts. We measured retinal responses to complex visual stimuli delivered at video rate via a photovoltaic subretinal implant and by visible light. Using a multielectrode array to record from retinal ganglion cells (RGCs) in the healthy and degenerated rat retina ex vivo, we estimated their spatiotemporal properties from the spike-triggered average responses to photovoltaic binary white noise stimulus with 70-μm pixel size at 20-Hz frame rate. The average photovoltaic receptive field size was 194 ± 3 μm (mean ± SE), similar to that of visual responses (221 ± 4 μm), but response latency was significantly shorter with photovoltaic stimulation. Both visual and photovoltaic receptive fields had an opposing center-surround structure. In the healthy retina, ON RGCs had photovoltaic OFF responses, and vice versa. This reversal is consistent with depolarization of photoreceptors by electrical pulses, as opposed to their hyperpolarization under increasing light, although alternative mechanisms cannot be excluded. In degenerate retina, both ON and OFF photovoltaic responses were observed, but in the absence of visual responses, it is not clear what functional RGC types they correspond to. Degenerate retina maintained the antagonistic center-surround organization of receptive fields. These fast and spatially localized network-mediated ON and OFF responses to subretinal stimulation via photovoltaic pixels with local return electrodes raise confidence in the possibility of providing more functional prosthetic vision. NEW & NOTEWORTHY Retinal prostheses currently in clinical use have struggled to deliver visual information at naturalistic frequencies, resulting in discontinuous percepts. We demonstrate modulation of the retinal ganglion cells (RGC) activity using complex spatiotemporal stimuli delivered via subretinal photovoltaic implant at 20 Hz in healthy and in degenerate retina. RGCs exhibit fast and localized ON and OFF network-mediated responses, with antagonistic center-surround organization of their receptive fields.
View details for PubMedID 29046428
View details for PubMedCentralID PMC5867391
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Comprehensive modeling on luminescent coupling dependency in multi-junction solar cells
SPIE-INT SOC OPTICAL ENGINEERING. 2018
View details for DOI 10.1117/12.2288573
View details for Web of Science ID 000432479700019
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NASA Integrated Photonics
IEEE. 2018
View details for Web of Science ID 000460542800102
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Investigation of Nickel Oxide as Carrier-selective Interlayer for Silicon Solar Cell Contacts
IEEE. 2018: 2180–82
View details for Web of Science ID 000469200402050
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Electrical and optical 3D modelling of light-trapping single-photon avalanche diode
SPIE-INT SOC OPTICAL ENGINEERING. 2018
View details for DOI 10.1117/12.2287312
View details for Web of Science ID 000432479700017
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Contact Selectivity Engineering in a 2 mum Thick Ultrathin c-Si Solar Cell Using Transition-Metal Oxides Achieving an Efficiency of 10.8.
ACS applied materials & interfaces
2017
Abstract
In this paper, the integration of metal oxides as carrier-selective contacts for ultrathin crystalline silicon (c-Si) solar cells is demonstrated which results in an 13% relative improvement in efficiency. The improvement in efficiency originates from the suppression of the contact recombination current due to the band offset asymmetry of these oxides with Si. First, an ultrathin c-Si solar cell having a total thickness of 2 mum is shown to have >10% efficiency without any light-trapping scheme. This is achieved by the integration of nickel oxide (NiOx) as a hole-selective contact interlayer material, which has a low valence band offset and high conduction band offset with Si. Second, we show a champion cell efficiency of 10.8% with the additional integration of titanium oxide (TiOx), a well-known material for an electron-selective contact interlayer. Key parameters including Voc and Jsc also show different degrees of enhancement if single (NiOx only) or double (both NiOx and TiOx) carrier-selective contacts are integrated. The fabrication process for TiOx and NiOx layer integration is scalable and shows good compatibility with the device.
View details for PubMedID 29124928
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First-principle Study for More Accurate Optical and Electrical Characterization of Ge1-xSnx Alloy for Si and Group-IV Device Applications
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2017; 17 (5): 675–84
View details for DOI 10.5573/JSTS.2017.17.4.675
View details for Web of Science ID 000418493700013
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Silicon single-photon avalanche diodes with nano-structured light trapping
NATURE COMMUNICATIONS
2017; 8: 628
Abstract
Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5-fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range.The performance of silicon single-photon avalanche detectors is currently limited by the trade-off between photon detection efficiency and timing jitter. Here, the authors demonstrate how a CMOS-compatible, nanostructured, thin junction structure can make use of tailored light trapping to break this trade-off.
View details for PubMedID 28931815
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Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors
APPLIED PHYSICS LETTERS
2017; 110 (9)
View details for DOI 10.1063/1.4977878
View details for Web of Science ID 000397871600009
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Multifunctional, inexpensive, and reusable nanoparticle-printed biochip for cell manipulation and diagnosis.
Proceedings of the National Academy of Sciences of the United States of America
2017; 114 (8): E1306-E1315
Abstract
Isolation and characterization of rare cells and molecules from a heterogeneous population is of critical importance in diagnosis of common lethal diseases such as malaria, tuberculosis, HIV, and cancer. For the developing world, point-of-care (POC) diagnostics design must account for limited funds, modest public health infrastructure, and low power availability. To address these challenges, here we integrate microfluidics, electronics, and inkjet printing to build an ultra-low-cost, rapid, and miniaturized lab-on-a-chip (LOC) platform. This platform can perform label-free and rapid single-cell capture, efficient cellular manipulation, rare-cell isolation, selective analytical separation of biological species, sorting, concentration, positioning, enumeration, and characterization. The miniaturized format allows for small sample and reagent volumes. By keeping the electronics separate from microfluidic chips, the former can be reused and device lifetime is extended. Perhaps most notably, the device manufacturing is significantly less expensive, time-consuming, and complex than traditional LOC platforms, requiring only an inkjet printer rather than skilled personnel and clean-room facilities. Production only takes 20 min (vs. up to weeks) and $0.01-an unprecedented cost in clinical diagnostics. The platform works based on intrinsic physical characteristics of biomolecules (e.g., size and polarizability). We demonstrate biomedical applications and verify cell viability in our platform, whose multiplexing and integration of numerous steps and external analyses enhance its application in the clinic, including by nonspecialists. Through its massive cost reduction and usability we anticipate that our platform will enable greater access to diagnostic facilities in developed countries as well as POC diagnostics in resource-poor and developing countries.
View details for DOI 10.1073/pnas.1621318114
View details for PubMedID 28167769
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Sub-optical-cycle control of free electrons by optical near-fields
IEEE. 2017
View details for Web of Science ID 000432564601363
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Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells
INTERNATIONAL JOURNAL OF PHOTOENERGY
2017
View details for DOI 10.1155/2017/7153640
View details for Web of Science ID 000412573700001
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Ge/SiGe Quantum-well Micro-bridges with High Tensile Strain
IEEE. 2017
View details for Web of Science ID 000427296201372
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Surface textured silicon single-photon avalanche diode
IEEE. 2017
View details for Web of Science ID 000427296202210
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Tensile-strained Ge/SiGe multiple quantum well microdisks
Photonics Research
2017; 5 (6): B7-B14
View details for DOI 10.1364/PRJ.5.0000B7
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Simulations of Taper Designs for Integrated Ge/SiGe Waveguide System
IEEE. 2017
View details for Web of Science ID 000427296201490
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Core-Shell Germanium/Germanium Tin Nanowires Exhibiting Room Temperature Direct- and Indirect-Gap Photoluminescence
NANO LETTERS
2016; 16 (12): 7521-7529
Abstract
Germanium-tin alloy nanowires hold promise as silicon-compatible optoelectronic elements with the potential to achieve a direct band gap transition required for efficient light emission. In contrast to Ge1-xSnx epitaxial thin films, free-standing nanowires deposited on misfitting germanium or silicon substrates can avoid compressive, elastic strains that inhibit formation of a direct gap. We demonstrate strong room temperature photoluminescence, consistent with band edge emission from both Ge core nanowires, elastically strained in tension, and the almost unstrained Ge1-xSnx shells grown around them. Low-temperature chemical vapor deposition of these core-shell structures was achieved using standard precursors, resulting in Sn incorporation that significantly exceeds the bulk solubility limit in germanium.
View details for DOI 10.1021/acs.nanolett.6b03316
View details for PubMedID 27802056
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Strained Pseudomorphic Ge1-xSnx Multiple Quantum Well Microdisk Using SiNy Stressor Layer
ACS PHOTONICS
2016; 3 (12): 2231-2236
View details for DOI 10.1021/acsphotonics.6b00562
View details for Web of Science ID 000390731700004
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Solar water splitting by photovoltaic-electrolysis with a solar-to-hydrogen efficiency over 30.
Nature communications
2016; 7: 13237-?
Abstract
Hydrogen production via electrochemical water splitting is a promising approach for storing solar energy. For this technology to be economically competitive, it is critical to develop water splitting systems with high solar-to-hydrogen (STH) efficiencies. Here we report a photovoltaic-electrolysis system with the highest STH efficiency for any water splitting technology to date, to the best of our knowledge. Our system consists of two polymer electrolyte membrane electrolysers in series with one InGaP/GaAs/GaInNAsSb triple-junction solar cell, which produces a large-enough voltage to drive both electrolysers with no additional energy input. The solar concentration is adjusted such that the maximum power point of the photovoltaic is well matched to the operating capacity of the electrolysers to optimize the system efficiency. The system achieves a 48-h average STH efficiency of 30%. These results demonstrate the potential of photovoltaic-electrolysis systems for cost-effective solar energy storage.
View details for DOI 10.1038/ncomms13237
View details for PubMedID 27796309
View details for PubMedCentralID PMC5095559
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SiC protective coating for photovoltaic retinal prosthesis.
Journal of neural engineering
2016; 13 (4): 046016-?
Abstract
To evaluate plasma-enhanced, chemically vapor deposited (PECVD) amorphous silicon carbide (α-SiC:H) as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo.Retinal prostheses were implanted in rats sub-retinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiN x and thermal SiO2 were measured in accelerated soaking tests in saline at 87 °C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects.At 87 °C SiN x dissolved at 18.3 ± 0.3 nm d(-1), while SiO2 grown at high temperature (1000 °C) dissolved at 0.104 ± 0.008 nm d(-1). SiC films demonstrated the best stability, with no quantifiable change after 112 d. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces.SiC coatings demonstrating no erosion in accelerated aging test for 112 d at 87 °C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4 month follow-up in vivo. The optimal thickness of SiC layers is about 560 nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects.
View details for DOI 10.1088/1741-2560/13/4/046016
View details for PubMedID 27323882
View details for PubMedCentralID PMC4967360
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Analysis of luminescent coupling effects in n series-connected multijunction solar cells
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2016; 213 (4): 941-946
View details for DOI 10.1002/pssa.201532686
View details for Web of Science ID 000374560100018
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Dry-wet digital etching of Ge1-xSnx
APPLIED PHYSICS LETTERS
2016; 108 (6)
View details for DOI 10.1063/1.4941800
View details for Web of Science ID 000373056300042
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Nanoelectronic three-dimensional (3D) nanotip sensing array for real-time, sensitive, label-free sequence specific detection of nucleic acids.
Biomedical microdevices
2016; 18 (1): 7-?
Abstract
The improvements in our ability to sequence and genotype DNA have opened up numerous avenues in the understanding of human biology and medicine with various applications, especially in medical diagnostics. But the realization of a label free, real time, high-throughput and low cost biosensing platforms to detect molecular interactions with a high level of sensitivity has been yet stunted due to two factors: one, slow binding kinetics caused by the lack of probe molecules on the sensors and two, limited mass transport due to the planar structure (two-dimensional) of the current biosensors. Here we present a novel three-dimensional (3D), highly sensitive, real-time, inexpensive and label-free nanotip array as a rapid and direct platform to sequence-specific DNA screening. Our nanotip sensors are designed to have a nano sized thin film as their sensing area (~ 20 nm), sandwiched between two sensing electrodes. The tip is then conjugated to a DNA oligonucleotide complementary to the sequence of interest, which is electrochemically detected in real-time via impedance changes upon the formation of a double-stranded helix at the sensor interface. This 3D configuration is specifically designed to improve the biomolecular hit rate and the detection speed. We demonstrate that our nanotip array effectively detects oligonucleotides in a sequence-specific and highly sensitive manner, yielding concentration-dependent impedance change measurements with a target concentration as low as 10 pM and discrimination against even a single mismatch. Notably, our nanotip sensors achieve this accurate, sensitive detection without relying on signal indicators or enhancing molecules like fluorophores. It can also easily be scaled for highly multiplxed detection with up to 5000 sensors/square centimeter, and integrated into microfluidic devices. The versatile, rapid, and sensitive performance of the nanotip array makes it an excellent candidate for point-of-care diagnostics, and high-throughput DNA analysis applications.
View details for DOI 10.1007/s10544-016-0032-8
View details for PubMedID 26780442
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Photovoltaic Pixels for Neural Stimulation: Circuit Models and Performance.
IEEE transactions on biomedical circuits and systems
2016; 10 (1): 85-97
Abstract
Photovoltaic conversion of pulsed light into pulsed electric current enables optically-activated neural stimulation with miniature wireless implants. In photovoltaic retinal prostheses, patterns of near-infrared light projected from video goggles onto subretinal arrays of photovoltaic pixels are converted into patterns of current to stimulate the inner retinal neurons. We describe a model of these devices and evaluate the performance of photovoltaic circuits, including the electrode-electrolyte interface. Characteristics of the electrodes measured in saline with various voltages, pulse durations, and polarities were modeled as voltage-dependent capacitances and Faradaic resistances. The resulting mathematical model of the circuit yielded dynamics of the electric current generated by the photovoltaic pixels illuminated by pulsed light. Voltages measured in saline with a pipette electrode above the pixel closely matched results of the model. Using the circuit model, our pixel design was optimized for maximum charge injection under various lighting conditions and for different stimulation thresholds. To speed discharge of the electrodes between the pulses of light, a shunt resistor was introduced and optimized for high frequency stimulation.
View details for DOI 10.1109/TBCAS.2014.2376528
View details for PubMedID 25622325
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Interactions of Prosthetic and Natural Vision in Animals With Local Retinal Degeneration
INVESTIGATIVE OPHTHALMOLOGY & VISUAL SCIENCE
2015; 56 (12): 7444-7450
Abstract
Prosthetic restoration of partial sensory loss leads to interactions between artificial and natural inputs. Ideally, the rehabilitation should allow perceptual fusion of the two modalities. Here we studied the interactions between normal and prosthetic vision in a rodent model of local retinal degeneration.Implantation of a photovoltaic array in the subretinal space of normally sighted rats induced local degeneration of the photoreceptors above the chip, and the inner retinal neurons in this area were electrically stimulated by the photovoltaic implant powered by near-infrared (NIR) light. We studied prosthetic and natural visually evoked potentials (VEP) in response to simultaneous stimulation by NIR and visible light patterns.We demonstrate that electrical and natural VEPs summed linearly in the visual cortex, and both responses decreased under brighter ambient light. Responses to visible light flashes increased over 3 orders of magnitude of contrast (flash/background), while for electrical stimulation the contrast range was limited to 1 order of magnitude. The maximum amplitude of the prosthetic VEP was three times lower than the maximum response to a visible flash over the same area on the retina.Ambient light affects prosthetic responses, albeit much less than responses to visible stimuli. Prosthetic representation of contrast in the visual scene can be encoded, to a limited extent, by the appropriately calibrated stimulus intensity, which also depends on the ambient light conditions. Such calibration will be important for patients combining central prosthetic vision with natural peripheral sight, such as in age-related macular degeneration.
View details for DOI 10.1167/iovs.15-17521
View details for Web of Science ID 000368238200056
View details for PubMedCentralID PMC5110201
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Interactions of Prosthetic and Natural Vision in Animals With Local Retinal Degeneration.
Investigative ophthalmology & visual science
2015; 56 (12): 7444-50
Abstract
Prosthetic restoration of partial sensory loss leads to interactions between artificial and natural inputs. Ideally, the rehabilitation should allow perceptual fusion of the two modalities. Here we studied the interactions between normal and prosthetic vision in a rodent model of local retinal degeneration.Implantation of a photovoltaic array in the subretinal space of normally sighted rats induced local degeneration of the photoreceptors above the chip, and the inner retinal neurons in this area were electrically stimulated by the photovoltaic implant powered by near-infrared (NIR) light. We studied prosthetic and natural visually evoked potentials (VEP) in response to simultaneous stimulation by NIR and visible light patterns.We demonstrate that electrical and natural VEPs summed linearly in the visual cortex, and both responses decreased under brighter ambient light. Responses to visible light flashes increased over 3 orders of magnitude of contrast (flash/background), while for electrical stimulation the contrast range was limited to 1 order of magnitude. The maximum amplitude of the prosthetic VEP was three times lower than the maximum response to a visible flash over the same area on the retina.Ambient light affects prosthetic responses, albeit much less than responses to visible stimuli. Prosthetic representation of contrast in the visual scene can be encoded, to a limited extent, by the appropriately calibrated stimulus intensity, which also depends on the ambient light conditions. Such calibration will be important for patients combining central prosthetic vision with natural peripheral sight, such as in age-related macular degeneration.
View details for DOI 10.1167/iovs.15-17521
View details for PubMedID 26618643
View details for PubMedCentralID PMC5110201
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Dielectric laser acceleration of sub-100 keV electrons with silicon dual-pillar grating structures
OPTICS LETTERS
2015; 40 (18): 4344-4347
Abstract
We present the demonstration of high-gradient laser acceleration and deflection of electrons with silicon dual-pillar grating structures using both evanescent inverse Smith-Purcell modes and coupled modes. Our devices accelerate subrelativistic 86.5 and 96.3 keV electrons by 2.05 keV over 5.6 μm distance for accelerating gradients of 370 MeV/m with a 3 nJ mode-locked Ti:sapphire laser. We also show that dual pillars can produce uniform accelerating gradients with a coupled-mode field profile. These results represent a significant step toward making practical dielectric laser accelerators for ultrafast, medical, and high-energy applications.
View details for DOI 10.1364/OL.40.004344
View details for Web of Science ID 000361556700040
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Investigation of germanium quantum-well light sources
OPTICS EXPRESS
2015; 23 (17): 22424-22430
Abstract
In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurements show the temperature-dependent properties of our Ge quantum-well devices, which are in good agreement with our theoretical models. We also demonstrate the PL measurements of Ge quantum-well microdisks using tapered-fiber collection method and quantify the optical loss of the Ge quantum-well structure from the measured PL spectra for the first time.
View details for DOI 10.1364/OE.23.022424
View details for Web of Science ID 000362418300078
View details for PubMedID 26368212
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Epitaxial growth of GaP/AlGaP mirrors on Si for low thermal noise optical coatings
OPTICAL MATERIALS EXPRESS
2015; 5 (8): 1890-1897
View details for DOI 10.1364/OME.5.001890
View details for Web of Science ID 000360319300024
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Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi₂Te₃ Surfaces under Ambient Conditions.
Nano letters
2015; 15 (7): 4241-7
Abstract
The local electrical characteristics on the surface of MBE-grown Bi2Te3 are probed under ambient conditions by conductive atomic force microscopy. Nanoscale mapping reveals a 10-100× enhancement in current at step-edges compared to that on terraces. Analysis of the local current-voltage characteristics indicates that the transport mechanism is similar for step-edges and terraces. Comparison of the results with those for control samples shows that the current enhancement is not a measurement artifact but instead is due to local differences in electronic properties. The likelihood of various possible mechanisms is discussed. The absence of enhancement at the step-edges for graphite terraces is consistent with the intriguing possibility that spin-orbit coupling and topological effects play a significant role in the step-edge current enhancement in Bi2Te3.
View details for DOI 10.1021/acs.nanolett.5b00542
View details for PubMedID 26030139
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Performance of photovoltaic arrays in-vivo and characteristics of prosthetic vision in animals with retinal degeneration
VISION RESEARCH
2015; 111: 142-148
Abstract
Loss of photoreceptors during retinal degeneration leads to blindness, but information can be reintroduced into the visual system using electrical stimulation of the remaining retinal neurons. Subretinal photovoltaic arrays convert pulsed illumination into pulsed electric current to stimulate the inner retinal neurons. Since required irradiance exceeds the natural luminance levels, an invisible near-infrared (915 nm) light is used to avoid photophobic effects. We characterized the thresholds and dynamic range of cortical responses to prosthetic stimulation with arrays of various pixel sizes and with different number of photodiodes. Stimulation thresholds for devices with 140 μm pixels were approximately half those of 70 μm pixels, and with both pixel sizes, thresholds were lower with 2 diodes than with 3 diodes per pixel. In all cases these thresholds were more than two orders of magnitude below the ocular safety limit. At high stimulation frequencies (>20 Hz), the cortical response exhibited flicker fusion. Over one order of magnitude of dynamic range could be achieved by varying either pulse duration or irradiance. However, contrast sensitivity was very limited. Cortical responses could be detected even with only a few illuminated pixels. Finally, we demonstrate that recording of the corneal electric potential in response to patterned illumination of the subretinal arrays allows monitoring the current produced by each pixel, and thereby assessing the changes in the implant performance over time.
View details for DOI 10.1016/j.visres.2014.09.007
View details for PubMedID 25255990
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Photovoltaic restoration of sight with high visual acuity
NATURE MEDICINE
2015; 21 (5): 476-U254
Abstract
Patients with retinal degeneration lose sight due to the gradual demise of photoreceptors. Electrical stimulation of surviving retinal neurons provides an alternative route for the delivery of visual information. We demonstrate that subretinal implants with 70-μm-wide photovoltaic pixels provide highly localized stimulation of retinal neurons in rats. The electrical receptive fields recorded in retinal ganglion cells were similar in size to the natural visual receptive fields. Similarly to normal vision, the retinal response to prosthetic stimulation exhibited flicker fusion at high frequencies, adaptation to static images and nonlinear spatial summation. In rats with retinal degeneration, these photovoltaic arrays elicited retinal responses with a spatial resolution of 64 ± 11 μm, corresponding to half of the normal visual acuity in healthy rats. The ease of implantation of these wireless and modular arrays, combined with their high resolution, opens the door to the functional restoration of sight in patients blinded by retinal degeneration.
View details for DOI 10.1038/nm.3851
View details for Web of Science ID 000354068800014
View details for PubMedID 25915832
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Photovoltaic restoration of sight with high visual acuity.
Nature medicine
2015; 21 (5): 476-482
Abstract
Patients with retinal degeneration lose sight due to the gradual demise of photoreceptors. Electrical stimulation of surviving retinal neurons provides an alternative route for the delivery of visual information. We demonstrate that subretinal implants with 70-μm-wide photovoltaic pixels provide highly localized stimulation of retinal neurons in rats. The electrical receptive fields recorded in retinal ganglion cells were similar in size to the natural visual receptive fields. Similarly to normal vision, the retinal response to prosthetic stimulation exhibited flicker fusion at high frequencies, adaptation to static images and nonlinear spatial summation. In rats with retinal degeneration, these photovoltaic arrays elicited retinal responses with a spatial resolution of 64 ± 11 μm, corresponding to half of the normal visual acuity in healthy rats. The ease of implantation of these wireless and modular arrays, combined with their high resolution, opens the door to the functional restoration of sight in patients blinded by retinal degeneration.
View details for DOI 10.1038/nm.3851
View details for PubMedID 25915832
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Bias-dependence of luminescent coupling efficiency in multijunction solar cells
OPTICS EXPRESS
2015; 23 (7): A219-A231
Abstract
In this work, we demonstrate an improved method to simulate the characteristics of multijunction solar cell by introducing a bias-dependent luminescent coupling efficiency. The standard two-diode equivalent-circuit model with constant luminescent coupling efficiency has limited accuracy because it does not include the recombination current from photogenerated carriers. Therefore, we propose an alternative analytical method with bias-dependent luminescent coupling efficiency to model multijunction cell behavior. We show that there is a noticeable difference in the J-V characteristics and cell performance generated by simulations with a constant vs. bias-dependent coupling efficiency. The results indicate that introducing a bias-dependent coupling efficiency produces more accurate modeling of multijunction cell behavior under real operating conditions.
View details for DOI 10.1364/OE.23.00A219
View details for Web of Science ID 000352290000004
View details for PubMedID 25968788
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Microring bio-chemical sensor with integrated low dark current Ge photodetector
APPLIED PHYSICS LETTERS
2015; 106 (10)
View details for DOI 10.1063/1.4915094
View details for Web of Science ID 000351397600011
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Laser acceleration and deflection of 96.3 keV electrons with a silicon dielectric structure
OPTICA
2015; 2 (2): 158-161
View details for DOI 10.1364/OPTICA.2.000158
View details for Web of Science ID 000354866800014
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Efficiency Enhancement of Gallium Arsenide Photovoltaics Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers
JOURNAL OF NANOMATERIALS
2015
View details for DOI 10.1155/2015/263734
View details for Web of Science ID 000366814900001
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On-chip plasmonic waveguide optical waveplate.
Scientific reports
2015; 5: 15794-?
View details for DOI 10.1038/srep15794
View details for PubMedID 26507563
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Photovoltaic Restoration of Sight with High Visual Acuity in Rats with Retinal Degeneration
25th Conference on Ophthalmic Technologies held as a part of the SPIE Photonics West BiOS Meeting
SPIE-INT SOC OPTICAL ENGINEERING. 2015
View details for DOI 10.1117/12.2081068
View details for Web of Science ID 000353411700013
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Controlled removal of amorphous Se capping layer from a topological insulator
APPLIED PHYSICS LETTERS
2014; 105 (24)
View details for DOI 10.1063/1.4904803
View details for Web of Science ID 000346643600022
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Nanoelectronic impedance detection of target cells.
Biotechnology and bioengineering
2014; 111 (6): 1161-1169
Abstract
Detection of cells is typically performed using optical fluorescence based techniques such as flow cytometry. Here we present the impedance detection of target cells using a nanoelectronic probe we have developed, which we refer to as the nanoneedle biosensor. The nanoneedle consists of a thin film conducting electrode layer at the bottom, an insulative oxide layer above, another conductive electrode layer above, and a protective oxide above. The electrical impedance is measured between the two electrode layers. Cells captured on the surface of the nanoneedle tip results in a decrease in the impedance across the sensing electrodes. The basic mechanisms behind the electrical response of cells in solution under an applied alternating electrical field stems from modulation of the relative permittivity at the interface. In this paper we discuss, the circuit model, the nanofabrication, and the testing and characterization of the sensor. We demonstrate proof of concept for detection of yeast cells with specificity. We envision the sensor presented in this paper to be combined with microfluidic pre-concentration technologies to develop low cost point-of-care diagnostic assays for the clinical setting.
View details for DOI 10.1002/bit.25171
View details for PubMedID 24338648
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Electrically driven subwavelength optical nanocircuits
NATURE PHOTONICS
2014; 8 (3): 244-249
View details for DOI 10.1038/NPHOTON.2014.2
View details for Web of Science ID 000332221100017
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Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics.
Nano letters
2014; 14 (1): 37-43
Abstract
We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon. The structure theoretically exhibits many electronic and optical advantages in laser design, and microdisk resonators using these structures can be precisely fabricated away from highly defective regions in the Ge buffer using a novel etch-stop process. Photoluminescence measurements on 2.7 μm diameter microdisks reveal sharp whispering-gallery-mode resonances (Q > 340) with strong luminescence.
View details for DOI 10.1021/nl402815v
View details for PubMedID 24299070
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Time-resolved photoluminescence studies of annealed 1.3-µm GaInNAsSb quantum wells.
Nanoscale research letters
2014; 9 (1): 81-?
Abstract
Time-resolved photoluminescence (PL) was applied to study the dynamics of carrier recombination in GaInNAsSb quantum wells (QWs) emitting near 1.3 μm and annealed at various temperatures. It was observed that the annealing temperature has a strong influence on the PL decay time, and hence, it influences the optical quality of GaInNAsSb QWs. At low temperatures, the PL decay time exhibits energy dependence (i.e., the decay times change for different energies of emitted photons), which can be explained by the presence of localized states. This energy dependence of PL decay times was fitted by a phenomenological formula, and the average value of E0, which describes the energy distribution of localized states, was extracted from this fit and found to be smallest (E0 = 6 meV) for the QW annealed at 700°C. In addition, the value of PL decay time at the peak energy was compared for all samples. The longest PL decay time (600 ps) was observed for the sample annealed at 700°C. It means that based on the PL dynamics, the optimal annealing temperature for this QW is approximately 700°C.
View details for DOI 10.1186/1556-276X-9-81
View details for PubMedID 24533740
View details for PubMedCentralID PMC3942105
-
Surface-Normal Ge/SiGe Asymmetric Fabry-Perot Optical Modulators Fabricated on Silicon Substrates
JOURNAL OF LIGHTWAVE TECHNOLOGY
2013; 31 (24): 3995-4003
View details for DOI 10.1109/JLT.2013.2279174
View details for Web of Science ID 000327721700003
-
Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment
APPLIED PHYSICS LETTERS
2013; 103 (24)
View details for DOI 10.1063/1.4850518
View details for Web of Science ID 000328706500018
-
Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application
APPLIED PHYSICS LETTERS
2013; 103 (22)
View details for DOI 10.1063/1.4833295
View details for Web of Science ID 000327696300033
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Simulation and fabrication of a new novel 3D injectable biosensor for high throughput genomics and proteomics in a lab-on-a-chip device.
Nanotechnology
2013; 24 (46): 465301-?
Abstract
Biosensors are used for the detection of biochemical molecules such as proteins and nucleic acids. Traditional techniques, such as enzyme-linked immuno-sorbent assay (ELISA), are sensitive but require several hours to yield a result and usually require the attachment of a fluorophore molecule to the target molecule. Micromachined biosensors that employ electrical detection are now being developed. Here we describe one such device, which is ultrasensitive, real-time, label free and localized. It is called the nanoneedle biosensor and shows promise to overcome some of the current limitations of biosensors. The key element of this device is a 10 nm wide annular gap at the end of the needle, which is the sensitive part of the sensor. The total diameter of the sensor is about 100 nm. Any change in the population of molecules in this gap results in a change of impedance across the gap. Single molecule detection should be possible because the sensory part of the sensor is in the range of bio-molecules of interest. To increase throughput we can flow the solution containing the target molecules over an array of such structures, each with its own integrated read-out circuitry to allow 'real-time' detection (i.e. several minutes) of label free molecules without sacrificing sensitivity. To fabricate the arrays we used electron beam lithography together with associated pattern transfer techniques. Preliminary measurements on individual needle structures in water are consistent with the design. Since the proposed sensor has a rigid nano-structure, this technology, once fully developed, could ultimately be used to directly monitor protein quantities within a single living cell, an application that would have significant utility for drug screening and studying various intracellular signaling pathways.
View details for DOI 10.1088/0957-4484/24/46/465301
View details for PubMedID 24149048
-
Simulation and fabrication of a new novel 3D injectable biosensor for high throughput genomics and proteomics in a lab-on-a-chip device.
Nanotechnology
2013; 24 (46): 465301-?
Abstract
Biosensors are used for the detection of biochemical molecules such as proteins and nucleic acids. Traditional techniques, such as enzyme-linked immuno-sorbent assay (ELISA), are sensitive but require several hours to yield a result and usually require the attachment of a fluorophore molecule to the target molecule. Micromachined biosensors that employ electrical detection are now being developed. Here we describe one such device, which is ultrasensitive, real-time, label free and localized. It is called the nanoneedle biosensor and shows promise to overcome some of the current limitations of biosensors. The key element of this device is a 10 nm wide annular gap at the end of the needle, which is the sensitive part of the sensor. The total diameter of the sensor is about 100 nm. Any change in the population of molecules in this gap results in a change of impedance across the gap. Single molecule detection should be possible because the sensory part of the sensor is in the range of bio-molecules of interest. To increase throughput we can flow the solution containing the target molecules over an array of such structures, each with its own integrated read-out circuitry to allow 'real-time' detection (i.e. several minutes) of label free molecules without sacrificing sensitivity. To fabricate the arrays we used electron beam lithography together with associated pattern transfer techniques. Preliminary measurements on individual needle structures in water are consistent with the design. Since the proposed sensor has a rigid nano-structure, this technology, once fully developed, could ultimately be used to directly monitor protein quantities within a single living cell, an application that would have significant utility for drug screening and studying various intracellular signaling pathways.
View details for DOI 10.1088/0957-4484/24/46/465301
View details for PubMedID 24149048
-
Single-cell photonic nanocavity probes.
Nano letters
2013; 13 (11): 4999-5005
Abstract
In this report, we demonstrate for the first time photonic nanocavities operating inside single biological cells. Here we develop a nanobeam photonic crystal (PC) cavity as an advanced cellular nanoprobe, active in nature, and configurable to provide a multitude of actions for both intracellular sensing and control. Our semiconductor nanocavity probes emit photoluminescence (PL) from embedded quantum dots (QD) and sustain high quality resonant photonic modes inside cells. The probes are shown to be minimally cytotoxic to cells from viability studies, and the beams can be loaded in cells and tracked for days at a time, with cells undergoing regular division with the beams. We present in vitro label-free protein sensing with our probes to detect streptavidin as a path towards real-time biomarker and biomolecule detection inside single cells. The results of this work will enable new areas of research merging the strengths of photonic nanocavities with fundamental cell biology.
View details for DOI 10.1021/nl304602d
View details for PubMedID 23387382
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Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy
JOURNAL OF APPLIED PHYSICS
2013; 114 (17)
View details for DOI 10.1063/1.4828737
View details for Web of Science ID 000327591900012
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Ultra-Compact and Low-Loss Polarization Rotator Based on Asymmetric Hybrid Plasmonic Waveguide
IEEE PHOTONICS TECHNOLOGY LETTERS
2013; 25 (21): 2081-2084
View details for DOI 10.1109/LPT.2013.2281425
View details for Web of Science ID 000325690900014
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High-Efficiency Nanostructured Window GaAs Solar Cells.
Nano letters
2013; 13 (10): 4850-4856
Abstract
Nanostructures have been widely used in solar cells due to their extraordinary optical properties. In most nanostructured cells, high short circuit current has been obtained due to enhanced light absorption. However, most of them suffer from lowered open circuit voltage and fill factor. One of the main challenges is formation of good junction and electrical contact. In particular, nanostructures in GaAs only have shown unsatisfactory performances (below 5% in energy conversion efficiency) which cannot match their ideal material properties and the record photovoltaic performances in industry. Here we demonstrate a completely new design for nanostructured solar cells that combines nanostructured window layer, metal mesa bar contact with small area, high quality planar junction. In this way, we not only keep the advanced optical properties of nanostructures such as broadband and wide angle antireflection, but also minimize its negative impact on electrical properties. High light absorption, efficient carrier collection, leakage elimination, and good lateral conductance can be simultaneously obtained. A nanostructured window cell using GaAs junction and AlGaAs nanocone window demonstrates 17% energy conversion efficiency and 0.982 V high open circuit voltage.
View details for DOI 10.1021/nl402680g
View details for PubMedID 24021024
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Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2013; 19 (5)
View details for DOI 10.1109/JSTQE.2013.2241397
View details for Web of Science ID 000323210900003
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Erratum: Publisher's Note: "Label-free electronic probing of nucleic acids and proteins at the nanoscale using the nanoneedle biosensor" [Biomicrofluidics 7, 044114 (2013)].
Biomicrofluidics
2013; 7 (4): 49901
Abstract
[This corrects the article on p. 044114 in vol. 7.].
View details for DOI 10.1063/1.4819277
View details for PubMedID 24046801
View details for PubMedCentralID PMC3765295
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Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1-xSnx): A Novel Route for Ge1-xSnx Nanostructure Fabrication.
Nano letters
2013; 13 (8): 3783-3790
Abstract
We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge(1-x)Sn(x)). We address the challenges in synthesis of high-quality, defect-free Ge(1-x)Sn(x) thin films by using Ge virtual substrates as a template for Ge(1-x)Sn(x) epitaxy. The etch process is applied to selectively remove the stress-inducing Ge virtual substrate and achieve strain-free, direct band gap Ge0.92Sn0.08. The semiconductor processing technology presented in this work provides a robust method for fabrication of innovative Ge(1-x)Sn(x) nanostructures whose realization can prove to be challenging, if not impossible, otherwise.
View details for DOI 10.1021/nl4017286
View details for PubMedID 23834495
-
Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor
BIOMEDICAL OPTICS EXPRESS
2013; 4 (8): 1332-1341
Abstract
Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm(3) and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecular probes in small animals. We integrated a critical enabling component, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit, which digitized the fluorescence signal to achieve autofluorescence-limited sensitivity. After surgical implantation of the lightweight sensor for two weeks, we obtained continuous and dynamic fluorophore measurements while the subject was un-anesthetized and mobile. The technology demonstrated here represents a critical step in the path toward untethered optical sensing using an integrated optoelectronic implant.
View details for DOI 10.1364/BOE.4.001332
View details for Web of Science ID 000322618900008
View details for PubMedCentralID PMC3756575
-
Label-free electronic probing of nucleic acids and proteins at the nanoscale using the nanoneedle biosensor
BIOMICROFLUIDICS
2013; 7 (4)
Abstract
Detection of proteins and nucleic acids is dominantly performed using optical fluorescence based techniques, which are more costly and timely than electrical detection due to the need for expensive and bulky optical equipment and the process of fluorescent tagging. In this paper, we discuss our study of the electrical properties of nucleic acids and proteins at the nanoscale using a nanoelectronic probe we have developed, which we refer to as the Nanoneedle biosensor. The nanoneedle consists of four thin film layers: a conductive layer at the bottom acting as an electrode, an oxide layer on top, and another conductive layer on top of that, with a protective oxide above. The presence of proteins and nucleic acids near the tip results in a decrease in impedance across the sensing electrodes. There are three basic mechanisms behind the electrical response of DNA and protein molecules in solution under an applied alternating electrical field. The first change stems from modulation of the relative permittivity at the interface. The second mechanism is the formation and relaxation of the induced dipole moment. The third mechanism is the tunneling of electrons through the biomolecules. The results presented in this paper can be extended to develop low cost point-of-care diagnostic assays for the clinical setting.
View details for DOI 10.1063/1.4817771
View details for Web of Science ID 000323907600016
View details for PubMedCentralID PMC3751968
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Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials.
Nature communications
2013; 4: 1980-?
Abstract
We have previously developed a wireless photovoltaic retinal prosthesis, in which camera-captured images are projected onto the retina using pulsed near-IR light. Each pixel in the subretinal implant directly converts pulsed light into local electric current to stimulate the nearby inner retinal neurons. Here we report that implants having pixel sizes of 280, 140 and 70 μm implanted in the subretinal space in rats with normal and degenerate retina elicit robust cortical responses upon stimulation with pulsed near-IR light. Implant-induced eVEP has shorter latency than visible light-induced VEP, its amplitude increases with peak irradiance and pulse duration, and decreases with frequency in the range of 2-20 Hz, similar to the visible light response. Modular design of the arrays allows scalability to a large number of pixels, and combined with the ease of implantation, offers a promising approach to restoration of sight in patients blinded by retinal degenerative diseases.
View details for DOI 10.1038/ncomms2980
View details for PubMedID 23778557
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Two-step growth of high quality Bi2Te3 thin films on Al2O3 (0001) by molecular beam epitaxy
APPLIED PHYSICS LETTERS
2013; 102 (17)
View details for DOI 10.1063/1.4803717
View details for Web of Science ID 000318553000022
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Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers
PHYSICAL REVIEW LETTERS
2013; 110 (17)
Abstract
We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the electronegativity of the layer in contact with Ge, leading to different types of optical transitions in the heterostructure. When group-V atoms compose the interfaces, only electrons are confined in Ge, whereas both carriers are confined when the interface consists of group-III atoms. The different carrier confinement results in different emission dynamics behavior. This study provides a solution to obtain efficient light emission from Ge.
View details for DOI 10.1103/PhysRevLett.110.177404
View details for Web of Science ID 000318188100016
View details for PubMedID 23679775
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Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
JOURNAL OF CRYSTAL GROWTH
2013; 365: 29-34
View details for DOI 10.1016/j.jcrysgro.2012.12.014
View details for Web of Science ID 000314629300006
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Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well
JOURNAL OF PHYSICS-CONDENSED MATTER
2013; 25 (6)
Abstract
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ~700 °C and ~760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ~720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.
View details for DOI 10.1088/0953-8984/25/6/065801
View details for Web of Science ID 000313950600015
View details for PubMedID 23306016
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Microneedle biosensor: A method for direct label-free real time protein detection
SENSORS AND ACTUATORS B-CHEMICAL
2013; 177: 848-855
Abstract
Here we present the development of an array of electrical micro-biosensors in a microfluidic channel, called microneedle biosensors. A microneedle biosensor is a real-time, label-free, direct electrical detection platform, which is capable of high sensitivity detection, measuring the change in ionic current and impedance modulation, due to the presence or reaction of biomolecules such as proteins and nucleic acids. In this study, we successfully fabricated and electrically characterized the sensors and demonstrated successful detection of target protein. In this study, we used biotinylated bovine serum albumin as the receptor and streptavidin as the target analyte.
View details for DOI 10.1016/j.snb.2012.11.064
View details for Web of Science ID 000315751000113
View details for PubMedCentralID PMC3551587
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Microneedle Biosensor: A Method for Direct Label-free Real Time Protein Detection.
Sensors and actuators. B, Chemical
2013; 177: 848-855
Abstract
Here we present the development of an array of electrical micro-biosensors in a microfluidic channel, called microneedle biosensors. A microneedle biosensor is a real-time, label-free, direct electrical detection platform, which is capable of high sensitivity detection, measuring the change in ionic current and impedance modulation, due to the presence or reaction of biomolecules such as proteins and nucleic acids. In this study, we successfully fabricated and electrically characterized the sensors and demonstrated successful detection of target protein. In this study, we used biotinylated bovine serum albumin as the receptor and streptavidin as the target analyte.
View details for DOI 10.1016/j.snb.2012.11.064
View details for PubMedID 23355762
View details for PubMedCentralID PMC3551587
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Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
2013; 1 (2): 48-53
View details for DOI 10.1109/JEDS.2013.2256458
View details for Web of Science ID 000209584700002
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Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy
JOURNAL OF CRYSTAL GROWTH
2013; 363: 258-263
View details for DOI 10.1016/j.jcrysgro.2012.10.055
View details for Web of Science ID 000313205400042
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Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon
OPTICS EXPRESS
2013; 21 (1): 867-876
Abstract
We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.
View details for PubMedID 23388980
-
Photon-enhanced thermionic emission from heterostructures with low interface recombination.
Nature communications
2013; 4: 1576-?
Abstract
Photon-enhanced thermionic emission is a method of solar-energy conversion that promises to combine photon and thermal processes into a single mechanism, overcoming fundamental limits on the efficiency of photovoltaic cells. Photon-enhanced thermionic emission relies on vacuum emission of photoexcited electrons that are in thermal equilibrium with a semiconductor lattice, avoiding challenging non-equilibrium requirements and exotic material properties. However, although previous work demonstrated the photon-enhanced thermionic emission effect, efficiency has until now remained very low. Here we describe electron-emission measurements on a GaAs/AlGaAs heterostructure that introduces an internal interface, decoupling the basic physics of photon-enhanced thermionic emission from the vacuum emission process. Quantum efficiencies are dramatically higher than in previous experiments because of low interface recombination and are projected to increase another order of magnitude with more stable, low work-function coatings. The results highlight the effectiveness of the photon-enhanced thermionic emission process and demonstrate that efficient photon-enhanced thermionic emission is achievable, a key step towards realistic photon-enhanced thermionic emission based energy conversion.
View details for DOI 10.1038/ncomms2577
View details for PubMedID 23481384
-
Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor.
Biomedical optics express
2013; 4 (8): 1332-1341
Abstract
Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm(3) and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecular probes in small animals. We integrated a critical enabling component, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit, which digitized the fluorescence signal to achieve autofluorescence-limited sensitivity. After surgical implantation of the lightweight sensor for two weeks, we obtained continuous and dynamic fluorophore measurements while the subject was un-anesthetized and mobile. The technology demonstrated here represents a critical step in the path toward untethered optical sensing using an integrated optoelectronic implant.
View details for DOI 10.1364/BOE.4.001332
View details for PubMedID 24009996
-
Label-free electronic probing of nucleic acids and proteins at the nanoscale using the nanoneedle biosensor.
Biomicrofluidics
2013; 7 (4): 44114-?
Abstract
Detection of proteins and nucleic acids is dominantly performed using optical fluorescence based techniques, which are more costly and timely than electrical detection due to the need for expensive and bulky optical equipment and the process of fluorescent tagging. In this paper, we discuss our study of the electrical properties of nucleic acids and proteins at the nanoscale using a nanoelectronic probe we have developed, which we refer to as the Nanoneedle biosensor. The nanoneedle consists of four thin film layers: a conductive layer at the bottom acting as an electrode, an oxide layer on top, and another conductive layer on top of that, with a protective oxide above. The presence of proteins and nucleic acids near the tip results in a decrease in impedance across the sensing electrodes. There are three basic mechanisms behind the electrical response of DNA and protein molecules in solution under an applied alternating electrical field. The first change stems from modulation of the relative permittivity at the interface. The second mechanism is the formation and relaxation of the induced dipole moment. The third mechanism is the tunneling of electrons through the biomolecules. The results presented in this paper can be extended to develop low cost point-of-care diagnostic assays for the clinical setting.
View details for DOI 10.1063/1.4817771
View details for PubMedID 24404047
-
Photon-enhanced thermionic emission from heterostructures with low interface recombination.
Nature communications
2013; 4: 1576-?
Abstract
Photon-enhanced thermionic emission is a method of solar-energy conversion that promises to combine photon and thermal processes into a single mechanism, overcoming fundamental limits on the efficiency of photovoltaic cells. Photon-enhanced thermionic emission relies on vacuum emission of photoexcited electrons that are in thermal equilibrium with a semiconductor lattice, avoiding challenging non-equilibrium requirements and exotic material properties. However, although previous work demonstrated the photon-enhanced thermionic emission effect, efficiency has until now remained very low. Here we describe electron-emission measurements on a GaAs/AlGaAs heterostructure that introduces an internal interface, decoupling the basic physics of photon-enhanced thermionic emission from the vacuum emission process. Quantum efficiencies are dramatically higher than in previous experiments because of low interface recombination and are projected to increase another order of magnitude with more stable, low work-function coatings. The results highlight the effectiveness of the photon-enhanced thermionic emission process and demonstrate that efficient photon-enhanced thermionic emission is achievable, a key step towards realistic photon-enhanced thermionic emission based energy conversion.
View details for DOI 10.1038/ncomms2577
View details for PubMedID 23481384
- Magnetic properties of gadolinium substituted Bi2Te3 thin films Appl. Phys. Lett. 2013; 24 (102): 242412
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Ge/SiGe Quantum Well Asymmetric Fabry-Perot Modulators on Silicon Substrates
IEEE-Photonics-Society Summer Topical Meeting
IEEE. 2013: 248–249
View details for Web of Science ID 000333963600121
- Single-Cell Photonic Nanocavity Probes NANO Lett. 2013
- Optical and Electronic Devices for Monolithically Integrated Photonics Circuits 2013
- Design of High-Power Low-Noise 2-D Distributed Feedback Laser 2013
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Silicon germanium waveguide for stronger optical confinement in integrated silicon photonics
Photonics Nanostruct. Fundam. Appl.
2013
View details for DOI 10.1016/j.photonics.
- Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling high-quality Ge (Sn) materials for micro and nanophotonics Nano Lett. in press. 2013
- Si/Ge/AlGaAs heterojunction high hole mobility transistor 2013
- Low-Standby Power and High-Performance InAs/InGaAs/InP heterojunction Tunneling Field-Effect Transistor 2013
- Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy J. Appl. Phys. 2013; 114: 173504
- Germanium Waveguide for On-Chip Optical Interconnect 2013
- Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application 2013
- Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application Appl. Phys. Lett. 2013; 22 (103): 222102-1 – 222102-4
- Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications IEEE J. Electron Devices Soc. 2013; 2 (1): 48-53
- MBE growth of tensile-strained Ge quantum wells and quantum dots Frontiers of Optoelectronics 2013
- (Invited) GeSn Channel n and p MOSFETs ECS Trans. 2013; 50: 937-941
- In Vitro Optical Fiber Biosensor for Integrated Optical System 2013
- Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics 2013
- High-Efficiency Nanostructured Window GaAs Solar Cells Nano Letters 2013; 10 (13): 4850-4856
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Progress in orientation-patterned GaP for next-generation nonlinear optical devices
Conference on Nonlinear Frequency Generation and Conversion - Materials, Devices, and Applications XII
SPIE-INT SOC OPTICAL ENGINEERING. 2013
View details for DOI 10.1117/12.2008057
View details for Web of Science ID 000322536300022
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Approaches for a Viable Germanium Laser: Tensile Strain, GeSn Alloys, and n-Type Doping
2nd IEEE-Photonics-Society Optical Interconnects Conference
IEEE. 2013: 112–113
View details for Web of Science ID 000325206200055
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Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion
Conference on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
SPIE-INT SOC OPTICAL ENGINEERING. 2013
View details for DOI 10.1117/12.2003486
View details for Web of Science ID 000322825200040
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In-vivo Performance of Photovoltaic Subretinal Prosthesis
Conference on Ophthalmic Technologies XXIII as a part of the SPIE Photonics West BiOS Meeting
SPIE-INT SOC OPTICAL ENGINEERING. 2013
View details for DOI 10.1117/12.2001750
View details for Web of Science ID 000325430800005
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Design optimization of an optically drivable heterogeneous MOSFET with silicon compatibility
Conference on Physics and Simulation of Optoelectronic Devices XXI
SPIE-INT SOC OPTICAL ENGINEERING. 2013
View details for DOI 10.1117/12.2005813
View details for Web of Science ID 000325433900042
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Towards a Photonic Crystal Mode-Locked Laser
Conference on Novel In-Plane Semiconductor Lasers XII
SPIE-INT SOC OPTICAL ENGINEERING. 2013
View details for DOI 10.1117/12.2005418
View details for Web of Science ID 000322737200016
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Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials.
Nature communications
2013; 4: 1980-?
Abstract
We have previously developed a wireless photovoltaic retinal prosthesis, in which camera-captured images are projected onto the retina using pulsed near-IR light. Each pixel in the subretinal implant directly converts pulsed light into local electric current to stimulate the nearby inner retinal neurons. Here we report that implants having pixel sizes of 280, 140 and 70 μm implanted in the subretinal space in rats with normal and degenerate retina elicit robust cortical responses upon stimulation with pulsed near-IR light. Implant-induced eVEP has shorter latency than visible light-induced VEP, its amplitude increases with peak irradiance and pulse duration, and decreases with frequency in the range of 2-20 Hz, similar to the visible light response. Modular design of the arrays allows scalability to a large number of pixels, and combined with the ease of implantation, offers a promising approach to restoration of sight in patients blinded by retinal degenerative diseases.
View details for DOI 10.1038/ncomms2980
View details for PubMedID 23778557
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Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators
OPTICS EXPRESS
2012; 20 (28): 29164-29173
Abstract
We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.
View details for Web of Science ID 000314914500005
View details for PubMedID 23388742
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Continuous sensing of tumor-targeted molecular probes with a vertical cavity surface emitting laser-based biosensor
JOURNAL OF BIOMEDICAL OPTICS
2012; 17 (11)
Abstract
Molecular optical imaging is a widespread technique for interrogating molecular events in living subjects. However, current approaches preclude long-term, continuous measurements in awake, mobile subjects, a strategy crucial in several medical conditions. Consequently, we designed a novel, lightweight miniature biosensor for in vivo continuous optical sensing. The biosensor contains an enclosed vertical-cavity surface-emitting semiconductor laser and an adjacent pair of near-infrared optically filtered detectors. We employed two sensors (dual sensing) to simultaneously interrogate normal and diseased tumor sites. Having established the sensors are precise with phantom and in vivo studies, we performed dual, continuous sensing in tumor (human glioblastoma cells) bearing mice using the targeted molecular probe cRGD-Cy5.5, which targets αVβ3 cell surface integrins in both tumor neovasculature and tumor. The sensors capture the dynamic time-activity curve of the targeted molecular probe. The average tumor to background ratio after signal calibration for cRGD-Cy5.5 injection is approximately 2.43±0.95 at 1 h and 3.64±1.38 at 2 h (N=5 mice), consistent with data obtained with a cooled charge coupled device camera. We conclude that our novel, portable, precise biosensor can be used to evaluate both kinetics and steady state levels of molecular probes in various disease applications.
View details for DOI 10.1117/1.JBO.17.11.117004
View details for Web of Science ID 000314502700046
View details for PubMedID 23123976
View details for PubMedCentralID PMC3595658
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Electrically Driven Photonic Crystal Nanocavity Devices
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2012; 18 (6): 1700-1710
View details for DOI 10.1109/JSTQE.2012.2193666
View details for Web of Science ID 000308664900011
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Optical Absorption Enhancement in Freestanding GaAs Thin Film Nanopyramid Arrays
ADVANCED ENERGY MATERIALS
2012; 2 (10): 1254-1260
View details for DOI 10.1002/aenm.201200022
View details for Web of Science ID 000309595900014
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Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications
OPTICAL MATERIALS EXPRESS
2012; 2 (10): 1336-1342
View details for Web of Science ID 000309507000005
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Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2012; 12 (3): 370-376
View details for DOI 10.5573/JSTS.2012.12.3.370
View details for Web of Science ID 000313339100015
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Antenna electrodes for controlling electroluminescence
NATURE COMMUNICATIONS
2012; 3
Abstract
Optical antennas can control the emission from quantum emitters by modifying the local density of optical states via the Purcell effect. A variety of nanometallic antennas have been implemented to enhance and control key photoluminescence properties, such as the decay rate, directionality and polarization. However, their implementation in active devices has been hampered by the need to precisely place emitters near an antenna and to efficiently excite them electrically. Here we illustrate a design methodology for antenna electrodes that for the first time facilitates simultaneous operation as electrodes for current injection and as antennas capable of optically manipulating the electroluminescence. We show that by confining the electrically excited carriers to the vicinity of antenna electrodes and maximizing the optical coupling of the emission to a single, well-defined antenna mode, their electroluminescence can be effectively controlled. This work spurs the development of densely integrated, electrically driven light sources with tailored emission properties.
View details for DOI 10.1038/ncomms1985
View details for Web of Science ID 000308801100021
View details for PubMedID 22893129
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Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements
18th American Conference on Crystal Growth and Epitaxy (ACCGE)/15th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE)
ELSEVIER SCIENCE BV. 2012: 72–77
View details for DOI 10.1016/j.jcrysgro.2011.12.077
View details for Web of Science ID 000306089300017
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Photovoltaic retinal prosthesis: implant fabrication and performance
JOURNAL OF NEURAL ENGINEERING
2012; 9 (4)
Abstract
The objective of this work is to develop and test a photovoltaic retinal prosthesis for restoring sight to patients blinded by degenerative retinal diseases. A silicon photodiode array for subretinal stimulation has been fabricated by a silicon-integrated-circuit/MEMS process. Each pixel in the two-dimensional array contains three series-connected photodiodes, which photovoltaically convert pulsed near-infrared light into bi-phasic current to stimulate nearby retinal neurons without wired power connections. The device thickness is chosen to be 30 µm to absorb a significant portion of light while still being thin enough for subretinal implantation. Active and return electrodes confine current near each pixel and are sputter coated with iridium oxide to enhance charge injection levels and provide a stable neural interface. Pixels are separated by 5 µm wide trenches to electrically isolate them and to allow nutrient diffusion through the device. Three sizes of pixels (280, 140 and 70 µm) with active electrodes of 80, 40 and 20 µm diameter were fabricated. The turn-on voltages of the one-diode, two-series-connected diode and three-series-connected diode structures are approximately 0.6, 1.2 and 1.8 V, respectively. The measured photo-responsivity per diode at 880 nm wavelength is ∼0.36 A W(-1), at zero voltage bias and scales with the exposed silicon area. For all three pixel sizes, the reverse-bias dark current is sufficiently low (<100 pA) for our application. Pixels of all three sizes reliably elicit retinal responses at safe near-infrared light irradiances, with good acceptance of the photodiode array in the subretinal space. The fabricated device delivers efficient retinal stimulation at safe near-infrared light irradiances without any wired power connections, which greatly simplifies the implantation procedure. Presence of the return electrodes in each pixel helps to localize the current, and thereby improves resolution.
View details for DOI 10.1088/1741-2560/9/4/046014
View details for Web of Science ID 000306759600027
View details for PubMedID 22791690
View details for PubMedCentralID PMC3419261
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Widely tunable midinfrared difference frequency generation in orientation-patterned GaAs pumped with a femtosecond Tm-fiber system
OPTICS LETTERS
2012; 37 (14): 2928-2930
Abstract
We demonstrate a midinfrared source tunable from 6.7 to 12.7 μm via difference frequency generation (DFG) in orientation-patterned GaAs, with 1.3 mW average output power. The input pulses are generated via Raman self-frequency shift of a femtosecond Tm-doped-fiber laser system in a fluoride fiber. We numerically model the DFG process and show good agreement between simulations and experiments. We use this numerical model to show an improved design using longer pump pulses.
View details for Web of Science ID 000306709900053
View details for PubMedID 22825181
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Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by Gamma-valley transport
OPTICS EXPRESS
2012; 20 (14): 14921-14927
Abstract
Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Γ-valley of germanium.
View details for Web of Science ID 000306176100028
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Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by G-valley transport.
Optics express
2012; 20 (14): 14921-14927
Abstract
Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Γ-valley of germanium.
View details for DOI 10.1364/OE.20.014921
View details for PubMedID 22772186
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Photovoltaic retinal prosthesis with high pixel density
NATURE PHOTONICS
2012; 6 (6): 391-397
Abstract
Retinal degenerative diseases lead to blindness due to loss of the "image capturing" photoreceptors, while neurons in the "image processing" inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm(2), two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 μm bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density.
View details for DOI 10.1038/NPHOTON.2012.104
View details for Web of Science ID 000304598200017
View details for PubMedCentralID PMC3462820
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Photovoltaic Retinal Prosthesis with High Pixel Density.
Nature photonics
2012; 6 (6): 391-397
Abstract
Retinal degenerative diseases lead to blindness due to loss of the "image capturing" photoreceptors, while neurons in the "image processing" inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm(2), two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 μm bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density.
View details for DOI 10.1038/nphoton.2012.104
View details for PubMedID 23049619
View details for PubMedCentralID PMC3462820
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Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2012; 12 (2): 230-239
View details for DOI 10.5573/JSTS.2012.12.2.230
View details for Web of Science ID 000306799300014
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A photonic crystal cavity-optical fiber tip nanoparticle sensor for biomedical applications
APPLIED PHYSICS LETTERS
2012; 100 (21)
View details for DOI 10.1063/1.4719520
View details for Web of Science ID 000304489900085
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Structural and optical characterization of SixGe1-x-ySny alloys grown by molecular beam epitaxy
APPLIED PHYSICS LETTERS
2012; 100 (14)
View details for DOI 10.1063/1.3701732
View details for Web of Science ID 000302567800026
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Low-temperature growth of Ge1-xSnx thin films with strain control by molecular beam epitaxy
THIN SOLID FILMS
2012; 520 (11): 3927-3930
View details for DOI 10.1016/j.tsf.2012.01.047
View details for Web of Science ID 000302838800012
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Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides
IEEE PHOTONICS TECHNOLOGY LETTERS
2012; 24 (6): 461-463
View details for DOI 10.1109/LPT.2011.2181496
View details for Web of Science ID 000300579600013
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Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopy
APPLIED PHYSICS LETTERS
2012; 100 (10)
View details for DOI 10.1063/1.3692735
View details for Web of Science ID 000301655500038
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Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells
IEEE JOURNAL OF QUANTUM ELECTRONICS
2012; 48 (2): 187-197
View details for DOI 10.1109/JQE.2011.2170961
View details for Web of Science ID 000299429100013
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Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance
IEICE ELECTRONICS EXPRESS
2012; 9 (9): 828-833
View details for DOI 10.1587/elex.9.828
View details for Web of Science ID 000305324600003
- Frequency Response of a Common-Source (CS) Amplifier Embedding Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor (TFET) 2012
- Simulation Study on Process Conditions for High-Speed Silicon Photodetector and Quantum-Well Structuring for Increased Number of Wavelength Discriminations 2012
- Design Consideration for Heterojunction P-Type Tunneling Field-Effect Transistor with Narrow-Bandgap Source Material 2012
- Room Temperature Photoluminescence from Ge/SiGe Quantum Well Structure in Microdisk Resonator 2012
- All-epitaxial Growth of Orientation-patterned Gallium Phosphide (OPGaP) Tech. Dig. OSA Lasers, Sources, and Related Photonic Devices, ITh5B.5-1-3 2012
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Tunable Mid-Infrared Source Based on Difference Frequency Generation of a Femtosecond Tm-fiber System in Orientation Patterned GaAs
Conference on Lasers and Electro-Optics (CLEO)
IEEE. 2012
View details for Web of Science ID 000310362400181
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MBE growth of tensile-strained Ge quantum wells and quantum dots
Front. Optoelectron. Chin. Online
2012
View details for DOI 10.1007/s12200-012-0193-x
- 1550-nm Germanium Light-Emitting Diode by Momentum Conservation Transport 2012
- Monte Carlo Simulations of the Influence of Localization Centres on Carrier Dynamics in GaInNAs Quantum Wells Acta Physica Polonica 2012; 6 (122): 1022-1025
- Temperature dependence of Ge quantum well light emitting diode on Si substrate 2012
- GaInNAs(Sb) Long-Wavelength VCSELs VCSELs, Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers edited by Michalzik, R. Springer-Verlag Berlin Heidelberg. 2012: 1–25
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Photonic Crystal Nanocavity Lasers and Modulators
25th IEEE Photonics Conference (IPC)
IEEE. 2012: 459–460
View details for Web of Science ID 000312865000229
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A New Approach to Ge Lasers with Low Pump Power
25th IEEE Photonics Conference (IPC)
IEEE. 2012: 60–61
View details for Web of Science ID 000312865000031
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Optical properties of Ge1-zSnz/SixGe1-x-ySny heterostructures
25th IEEE Photonics Conference (IPC)
IEEE. 2012: 919–920
View details for Web of Science ID 000312865000453
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Ultra-Low Threshold and High Speed Electrically Driven Photonic Crystal Nanocavity Lasers and LEDs
Conference on Lasers and Electro-Optics (CLEO)
IEEE. 2012
View details for Web of Science ID 000310362401172
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Electrically driven photonic crystal nanocavity lasers, LEDs, and modulators
Conference on Novel In-Plane Semiconductor Lasers XI
SPIE-INT SOC OPTICAL ENGINEERING. 2012
View details for DOI 10.1117/12.907432
View details for Web of Science ID 000305332300003
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Ultrafast Direct Modulation of a Single-Mode Photonic Crystal Nanocavity Light-Emitting Diode
Conference on Lasers and Electro-Optics (CLEO)
IEEE. 2012
View details for Web of Science ID 000310362400095
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Photovoltaic retinal prosthesis for restoring sight to the blind: implant design and fabrication
Conference on Micromachining and Microfabrication Process Technology XVII
SPIE-INT SOC OPTICAL ENGINEERING. 2012
View details for DOI 10.1117/12.909104
View details for Web of Science ID 000302640000004
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Light Emission in Ge Quantum Wells
Conference on Lasers and Electro-Optics (CLEO)
IEEE. 2012
View details for Web of Science ID 000310362401204
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Optical Fiber Tips Functionalized with Semiconductor Photonic Crystal Cavities
Conference on Lasers and Electro-Optics (CLEO)
IEEE. 2012
View details for Web of Science ID 000310362400287
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GaAs thin film nanostructure arrays for III-V solar cell applications
Conference on Photonic and Phononic Properties of Engineered Nanostructures II
SPIE-INT SOC OPTICAL ENGINEERING. 2012
View details for DOI 10.1117/12.909743
View details for Web of Science ID 000302582400036
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Selective-Area Growth of Ge and Ge/SiGe Quantum Wells in 3 mu m Silicon-on-Insulator Waveguides
Conference on Lasers and Electro-Optics (CLEO)
IEEE. 2012
View details for Web of Science ID 000310362401207
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Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation
APPLIED PHYSICS LETTERS
2011; 99 (24)
View details for DOI 10.1063/1.3670325
View details for Web of Science ID 000298254200065
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Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors
IEEE TRANSACTIONS ON ELECTRON DEVICES
2011; 58 (12): 4164-4171
View details for DOI 10.1109/TED.2011.2167335
View details for Web of Science ID 000297337000005
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Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell
JOURNAL OF CRYSTAL GROWTH
2011; 335 (1): 66-69
View details for DOI 10.1016/j.jcrysgro.2011.09.023
View details for Web of Science ID 000296993900013
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Optical fiber tips functionalized with semiconductor photonic crystal cavities
APPLIED PHYSICS LETTERS
2011; 99 (19)
View details for DOI 10.1063/1.3660278
View details for Web of Science ID 000297030200002
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Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode
NATURE COMMUNICATIONS
2011; 2
Abstract
Low-power and electrically controlled optical sources are vital for next generation optical interconnect systems to meet strict energy demands. Current optical transmitters consisting of high-threshold lasers plus external modulators consume far too much power to be competitive with future electrical interconnects. Here we demonstrate a directly modulated photonic crystal nanocavity light-emitting diode (LED) with 10 GHz modulation speed and less than 1 fJ per bit energy of operation, which is orders of magnitude lower than previous solutions. The device is electrically controlled and operates at room temperature, while the high modulation speed results from the fast relaxation of the quantum dots used as the active material. By virtue of possessing a small mode volume, our LED is intrinsically single mode and, therefore, useful for communicating information over a single narrowband channel. The demonstrated device is a major step forward in providing practical low-power and integrable sources for on-chip photonics.
View details for DOI 10.1038/ncomms1543
View details for Web of Science ID 000297686500026
View details for PubMedID 22086339
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Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy
APPLIED PHYSICS LETTERS
2011; 99 (18)
View details for DOI 10.1063/1.3658632
View details for Web of Science ID 000296659400025
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Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator With 20-nm Free-Spectral Range
IEEE PHOTONICS TECHNOLOGY LETTERS
2011; 23 (20)
View details for DOI 10.1109/LPT.2011.2163929
View details for Web of Science ID 000298952900025
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Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2011; 11 (3): 182-189
View details for DOI 10.5573/JSTS.2011.11.3.182
View details for Web of Science ID 000301290800006
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Nanobeam photonic crystal cavity light-emitting diodes
APPLIED PHYSICS LETTERS
2011; 99 (7)
View details for DOI 10.1063/1.3625432
View details for Web of Science ID 000294208900005
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Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3
JAPANESE JOURNAL OF APPLIED PHYSICS
2011; 50 (8)
View details for DOI 10.1143/JJAP.50.085501
View details for Web of Science ID 000294336600053
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Raman study of strained Ge1-xSnx alloys
APPLIED PHYSICS LETTERS
2011; 98 (26)
View details for DOI 10.1063/1.3606384
View details for Web of Science ID 000292335700027
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Optical Gain in GaInNAs and GaInNAsSb Quantum Wells
IEEE JOURNAL OF QUANTUM ELECTRONICS
2011; 47 (6): 870-877
View details for DOI 10.1109/JQE.2011.2129492
View details for Web of Science ID 000290735400001
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X-ray diffraction analysis of step-graded InxGa1-xAs buffer layers grown by molecular beam epitaxy
16th International Conference on Molecular Beam Epitaxy (ICMBE)
ELSEVIER SCIENCE BV. 2011: 17–20
View details for DOI 10.1016/j.jcrysgro.2010.11.173
View details for Web of Science ID 000292175000005
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Two-dimensional III-V nucleation on Si for nonlinear optics
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
2011; 29 (3)
View details for DOI 10.1116/1.3562191
View details for Web of Science ID 000291111300056
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Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser
NATURE PHOTONICS
2011; 5 (5): 297-300
View details for DOI 10.1038/NPHOTON.2011.51
View details for Web of Science ID 000290014900020
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Experimental demonstration of two methods for controlling the group delay in a system with photonic-crystal resonators coupled to a waveguide
OPTICS LETTERS
2011; 36 (8): 1482-1484
Abstract
We measure the group delay in an on-chip photonic-crystal device with two resonators side coupled to a waveguide. We demonstrate that such a group delay can be controlled by tuning either the propagation phase of the waveguide or the frequency of the resonators.
View details for Web of Science ID 000290034500059
View details for PubMedID 21499397
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Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition
APPLIED PHYSICS LETTERS
2011; 98 (15)
View details for DOI 10.1063/1.3574912
View details for Web of Science ID 000289580800008
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Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy
APPLIED PHYSICS LETTERS
2011; 98 (1)
View details for DOI 10.1063/1.3534785
View details for Web of Science ID 000286009800012
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Photovoltaic Retinal Prosthesis
Conference on Ophthalmic Technologies XXI
SPIE-INT SOC OPTICAL ENGINEERING. 2011
View details for DOI 10.1117/12.876560
View details for Web of Science ID 000297590500028
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MBE growth of tensile-strained Ge quantum wells and quantum dots
Front. Optoelectron.
2011
View details for DOI 10.1007 /s12200-012-0193
- Experimental demonstration of two methods for controlling the group delay in a system with photonic-crystal resonators coupled to a waveguide Opt. Lett. 2011; 4 (36): 1482-1483
- Small-Signal Modeling of Gate-All-Around (GAA) Junctionless MOSFETs for Sub-millimeter Wave Application 2011
- Silicon-Compatible Bulk-Type Compound Junctionless Field-Effect Transistor 2011
- Direct-Bandgap Photoluminescence of MBE-grown Ge1-xSnx Alloys 2011
- Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation Applied Phys. Lett. 2011; 24 (99): 243505-1-4
- Ge quantum well resonator modulators 2011
- Fabrication and Characterization of Whispering Gallery Mode (WGM) Microdisk Resonator Based on Epitaxially Grown GeSn 2011
- Design Optimization of Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) of Ge-AlxGa1-xAs System for High Performance Logic Technology 2011
- Surface Roughness Effect on Q-Factor of Ge Whispering Gallery Mode Microdisk Resonator 2011
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Low power consumption electrically pumped photonic crystal membrane devices
Conference on Active Photonic Materials IV
SPIE-INT SOC OPTICAL ENGINEERING. 2011
View details for DOI 10.1117/12.894479
View details for Web of Science ID 000295963400021
- A novel nano-structured GaAs solar cell 2011
- A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides 2011
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Fast epitaxial growth of thick quasi-phase matched GaP for applications in the MIR and THz: determination of the optimal substrate and pattern orientation
36th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
IEEE. 2011
View details for Web of Science ID 000330296300490
- Simple Electroabsorption Calculator for Germanium Quantum Well Devices 2011
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Optical gain in GaInNAs and GaInNAsSb quantum wells
Conference on Lasers and Electro-Optics (CLEO)
IEEE. 2011
View details for Web of Science ID 000295612401010
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GeSn Technology: Extending the Ge Electronics Roadmap
IEEE International Electron Devices Meeting (IEDM)
IEEE. 2011
View details for Web of Science ID 000300015300100
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Ultra-low Threshold Electrically Pumped Quantum Dot Photonic Crystal Nanocavity Laser
Conference on Lasers and Electro-Optics (CLEO)
IEEE. 2011
View details for Web of Science ID 000295612403207
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Integrated photonic structures for parallel fluorescence and refractive index biosensing
Conference on Photonic Microdevices/Microstructures for Sensing III
SPIE-INT SOC OPTICAL ENGINEERING. 2011
View details for DOI 10.1117/12.884228
View details for Web of Science ID 000294154700005
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Emerging applications for vertical cavity surface emitting lasers
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2011; 26 (1)
View details for DOI 10.1088/0268-1242/26/1/014010
View details for Web of Science ID 000285382000012
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Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2010; 10 (4): 265-275
View details for Web of Science ID 000289445400003
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Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes
APPLIED PHYSICS LETTERS
2010; 97 (17)
View details for DOI 10.1063/1.3490245
View details for Web of Science ID 000284233600027
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Tuning the coherent interaction in an on-chip photonic-crystal waveguide-resonator system
APPLIED PHYSICS LETTERS
2010; 97 (10)
View details for DOI 10.1063/1.3486686
View details for Web of Science ID 000282478800002
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Implantable semiconductor biosensor for continuous in vivo sensing of far-red fluorescent molecules
OPTICS EXPRESS
2010; 18 (12): 12513-12525
Abstract
We have fabricated miniature implantable fluorescence sensors for continuous fluorescence sensing applications in living subjects. These monolithically integrated GaAs-based sensors incorporate a 675 nm vertical-cavity surface-emitting laser (VCSEL), a GaAs PIN photodiode, and a fluorescence emission filter. We demonstrate high detection sensitivity for Cy5.5 far-red dye (50 nanoMolar) in living tissue, limited by the intrinsic background autofluorescence. These low cost, sensitive and scalable sensors are promising for long-term continuous monitoring of molecular dynamics for biomedical studies in freely moving animals.
View details for Web of Science ID 000278527700052
View details for PubMedID 20588377
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Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction
APPLIED PHYSICS LETTERS
2010; 96 (18)
View details for DOI 10.1063/1.3425663
View details for Web of Science ID 000277422000003
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Nanobeam photonic crystal cavity quantum dot laser
OPTICS EXPRESS
2010; 18 (9): 8781-8789
Abstract
The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is calculated. We study the cavity lasers under both 780 nm and 980 nm pump, finding thresholds as low as 0.3 microW and 19 microW for the two pump wavelengths, respectively. Finally, the nanobeam cavity laser wavelengths are tuned by up to 7 nm by employing a fiber taper in near proximity to the cavities. The fiber taper is used both to efficiently pump the cavity and collect the cavity emission.
View details for Web of Science ID 000277082200006
View details for PubMedID 20588722
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Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs substrates
17th Amer Conference on Crystal Growth and Epitaxy/14th United States Biennial Workshop on Organometallic Vapor Phase Epitaxy/6th Inter Workshop on Modeling in Crystal Growth
ELSEVIER SCIENCE BV. 2010: 1142–45
View details for DOI 10.1016/j.jcrysgro.2009.12.054
View details for Web of Science ID 000277039100021
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Extracting systematic factors in a continuous-time credit migration model
JOURNAL OF CREDIT RISK
2010; 6 (1): 31-53
View details for Web of Science ID 000276777800003
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Photoreflectance and photoluminescence study of GaInNAsSb layers lattice matched to InP
JOURNAL OF APPLIED PHYSICS
2010; 107 (4)
View details for DOI 10.1063/1.3280030
View details for Web of Science ID 000275028900039
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DESIGN AND GROWTH OF III-V NANOWIRE SOLAR CELL ARRAYS ON LOW COST SUBSTRATES
35th IEEE Photovoltaic Specialists Conference
IEEE. 2010: 2034–2037
View details for Web of Science ID 000287579502062
- Simple electroabsorption model for germanium quantum well devices 2010
- Simple electroabsorption model for silicongermanium/germanium quantum well devices 2010
- Fabrication of Prototype Magnetic Coupled Spin-torque Devices for Non-volatile Logic Applications 2010
- Experimental demonstration of an all-optical analogue to the superradiance effect in an on-chip photonic crystal resonator system Phys. Rev. 2010; 4 (B81): 041101-1-3
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Multi-scale Simulations of Partially Unzipped CNT Hetero-junction Tunneling Field Effect Transistor
International Electron Devices Meeting (IEDM)
IEEE. 2010
View details for Web of Science ID 000287997300189
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MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift
7th IEEE International Conference on Group IV Photonics (GFP)
IEEE. 2010: 344–346
View details for Web of Science ID 000300485500116
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Electrically Pumped Photonic Crystal Nanocavities Using a Laterally Doped p-i-n Junction
Conference on Lasers and Electro-Optics (CLEO)/Quantum Electronics and Laser Science Conference (QELS)
IEEE. 2010
View details for Web of Science ID 000290513601253
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Fabrication of an integrated 670nm VCSEL-based sensor for miniaturized fluorescence sensing
Conference on Vertical-Cavity Surface-Emitting Lasers XIV
SPIE-INT SOC OPTICAL ENGINEERING. 2010
View details for DOI 10.1117/12.842096
View details for Web of Science ID 000283918300013
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Si-Ge Surface-normal Asymmetric Fabry-Perot Quantum-confined Stark Effect Electroabsorption Modulator
23rd Annual Meeting of the IEEE Photonics-Society
IEEE. 2010: 514–515
View details for Web of Science ID 000287997500258
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Integration of Germanium Quantum Well Structures on a Silicon-on-Insulator Waveguide Platform for Optical Modulator Applications
7th IEEE International Conference on Group IV Photonics (GFP)
IEEE. 2010: 60–62
View details for Web of Science ID 000300485500021
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Experimental demonstration of an all-optical analogue to the superradiance effect in an on-chip photonic crystal resonator system
PHYSICAL REVIEW B
2010; 81 (4)
View details for DOI 10.1103/PhysRevB.81.041101
View details for Web of Science ID 000274002500001
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Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2010; 16 (1): 85-92
View details for DOI 10.1109/JSTQE.2009.2031502
View details for Web of Science ID 000274382900010
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FACETING AND DISORDER IN NANOWIRE SOLAR CELL ARRAYS
35th IEEE Photovoltaic Specialists Conference
IEEE. 2010: 1848–1853
View details for Web of Science ID 000287579502020
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Nonradiative recombination in 1.56 mu m GaInNAsSb/GaNAs quantum-well lasers
APPLIED PHYSICS LETTERS
2009; 95 (23)
View details for DOI 10.1063/1.3271182
View details for Web of Science ID 000272627700004
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Design and Analysis of CMOS-Controlled Tunable Photodetectors for Multiwavelength Discrimination
JOURNAL OF LIGHTWAVE TECHNOLOGY
2009; 27 (23): 5451-5460
View details for DOI 10.1109/JLT.2009.2032248
View details for Web of Science ID 000270946600006
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Optical probes of orientation-patterned ZnSe quasi-phase-matched devices
OPTICAL ENGINEERING
2009; 48 (11)
View details for DOI 10.1117/1.3257266
View details for Web of Science ID 000273210600011
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GaAs-based 1.53 mu m GaInNAsSb vertical cavity surface emitting lasers
ELECTRONICS LETTERS
2009; 45 (19): 978-U28
View details for DOI 10.1049/el.2009.1626
View details for Web of Science ID 000270146100012
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Electrically controlled modulation in a photonic crystal nanocavity
OPTICS EXPRESS
2009; 17 (18): 15409-15419
Abstract
We describe a compact modulator based on a photonic crystal nanocavity whose resonance is electrically controlled through an integrated p-i-n junction. The sub-micron size of the nanocavity promises very low capacitance, high bandwidth, and efficient on-chip integration in optical interconnects.
View details for PubMedID 19724539
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Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2009; 24 (7)
View details for DOI 10.1088/0268-1242/24/7/075013
View details for Web of Science ID 000267402800014
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Magnetic coupled spin-torque devices for nonvolatile logic applications
53rd Annual Conference on Magnetism and Magnetic Materials
AMER INST PHYSICS. 2009
View details for DOI 10.1063/1.3056141
View details for Web of Science ID 000266633500495
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High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication
JOURNAL OF CRYSTAL GROWTH
2009; 311 (7): 1962-1971
View details for DOI 10.1016/j.jcrysgro.2008.09.138
View details for Web of Science ID 000265659300083
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QUaD: A HIGH-RESOLUTION COSMIC MICROWAVE BACKGROUND POLARIMETER
ASTROPHYSICAL JOURNAL
2009; 692 (2): 1221-1246
View details for DOI 10.1088/0004-637X/692/2/1221
View details for Web of Science ID 000263674700019
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Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 mu m: Broadening of the fundamental transition
APPLIED PHYSICS LETTERS
2009; 94 (3)
View details for DOI 10.1063/1.3073718
View details for Web of Science ID 000262724000010
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Implantable optical biosensor for in vivo molecular imaging
Conference on Optical Fibers and Sensors for Medical Diagnostics and Treatment Applications IX
SPIE-INT SOC OPTICAL ENGINEERING. 2009
View details for DOI 10.1117/12.811227
View details for Web of Science ID 000284821100007
- High quality III-V materials growth on Si (100) substrate via Ge buffer J. Crystal Growth 2009: 1962-71
- Origin of non radiative recombination in GaInNAsSb/GaNAs quantum well lasers 2009
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Origin of Non Radiative Recombination in GaInNAsSb/GaNAs Quantum Well Lasers
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009)
IEEE. 2009: 1627–1628
View details for Web of Science ID 000274751301137
- A Implantable optical biosensor for in vivo molecular imaging 2009
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Fermi Level Depinning For the Design of III-V FET Source/Drain Contacts
International Symposium on VLSI Technology, Systems and Applications
IEEE. 2009: 123–124
View details for Web of Science ID 000272451000055
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High Efficiency Solar Cells based on Spontaneous Emission Inhibition in Photonic Crystals
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009)
IEEE. 2009: 2659–2660
View details for Web of Science ID 000274751302314
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1528 nm GaInNAsSb/GaAs Vertical Cavity Surface Emitting Lasers
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009)
IEEE. 2009: 1629–1630
View details for Web of Science ID 000274751301138
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Near-infrared in vivo fluorescence sensor with integrated dielectric emission filter
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009)
IEEE. 2009: 3085–3086
View details for Web of Science ID 000274751302528
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Direct Band Gap Tensile-Strained Germanium
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009)
IEEE. 2009: 824–825
View details for Web of Science ID 000274751300415
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Towards responsible use of cognitive-enhancing drugs by the healthy
NATURE
2008; 456 (7223): 702-705
View details for DOI 10.1038/456702a
View details for Web of Science ID 000261559900020
View details for PubMedID 19060880
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Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy
JOURNAL OF ELECTRONIC MATERIALS
2008; 37 (12): 1774-1779
View details for DOI 10.1007/s11664-008-0472-x
View details for Web of Science ID 000260377400005
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Growth of mm-thick orientation-patterned GaAs for IR and THZ generation
JOURNAL OF CRYSTAL GROWTH
2008; 310 (24): 5241-5247
View details for DOI 10.1016/j.jcrysgro.2008.08.050
View details for Web of Science ID 000262193900002
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Analysis of Active Hybrid Fiber-Semiconductor Devices for Optical Networks
IEEE JOURNAL OF QUANTUM ELECTRONICS
2008; 44 (11-12): 1042-1054
View details for DOI 10.1109/JQE.2008.2001304
View details for Web of Science ID 000261544400008
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A review of progress on nano-aperture VCSEL
CHINESE OPTICS LETTERS
2008; 6 (10): 748-754
View details for DOI 10.3788/COL20080610.0748
View details for Web of Science ID 000260619300012
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Low surface roughness and threading dislocation density Ge growth on Si (001)
JOURNAL OF CRYSTAL GROWTH
2008; 310 (18): 4273-4279
View details for DOI 10.1016/j.jcrysgro.2008.07.029
View details for Web of Science ID 000259791100042
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Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators
APPLIED PHYSICS LETTERS
2008; 93 (5)
View details for DOI 10.1063/1.2966357
View details for Web of Science ID 000258335900058
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On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32%
JOURNAL OF APPLIED PHYSICS
2008; 104 (3)
View details for DOI 10.1063/1.2961330
View details for Web of Science ID 000258493900052
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Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge
APPLIED PHYSICS LETTERS
2008; 92 (25)
View details for DOI 10.1063/1.2951608
View details for Web of Science ID 000257231200043
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Molecular-beam epitaxial growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication
APPLIED PHYSICS LETTERS
2008; 92 (20)
View details for DOI 10.1063/1.2929386
View details for Web of Science ID 000256196600093
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Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning
APPLIED PHYSICS LETTERS
2008; 92 (10)
View details for DOI 10.1063/1.2896615
View details for Web of Science ID 000253989300114
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Terahertz sources based on intracavity parametric down-conversion in quasi-phase-matched gallium arsenide
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2008; 14 (2): 354-362
View details for DOI 10.1109/JSTQE.2008.917957
View details for Web of Science ID 000258763400012
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The quasi-optical design of the QUaD telescope
INFRARED PHYSICS & TECHNOLOGY
2008; 51 (4): 277-286
View details for DOI 10.1016/j.infrared.2007.10.001
View details for Web of Science ID 000254984100001
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C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing
ELECTRONICS LETTERS
2008; 44 (1): 49-U63
View details for Web of Science ID 000252959400032
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Low-frequency noise characterization of near-IR VCSELs for functional brain imaging
Conference on Photonic Therapeutics and Diagnostics IV
SPIE-INT SOC OPTICAL ENGINEERING. 2008
View details for DOI 10.1117/12.764143
View details for Web of Science ID 000255314100050
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Experimental investigation of temperature dependence of 1.55 mu m GaInNAsSb/GaNAs QW lasers grown in MBE
IEEE 21st International Semiconductor Laser Conference
IEEE. 2008: 59–60
View details for Web of Science ID 000263222600030
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Tunable THz Source Based on Intracavity Parametric Down-Conversion in Quasi-Phase-Matched GaAs
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2008)
IEEE. 2008: 1459–1460
View details for Web of Science ID 000260498400732
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Optical probes of orientation-patterned ZnSe quasi-phase-matched devices
Conference on Nonlinear Frequency Generation and Conversion - Materials, Devices, and Applications VII
SPIE-INT SOC OPTICAL ENGINEERING. 2008
View details for DOI 10.1117/12.768553
View details for Web of Science ID 000255510700015
- Electronmodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and Effective Mass Issues Dilute III-V Nitride Semiconductors and Materials Systems edited by Erol, A. Springer Series in Materials Science Springer-Verlag, Berlin, Germany. 2008
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THz source based on resonantly-enhanced difference frequency generation in periodically-inverted GaAs
33rd International Conference on Infrared, Millimeter and Terahertz Waves
IEEE. 2008: 237–237
View details for Web of Science ID 000263160700127
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The Fermi level position in as-grown GaInNAS(Sb) quantum wells and layers studied by contactless electroreflectance
Symposium on Novel Gain Materials and Devices Based on III-N-V Compounds held at the 2007 E-MRS Spring Meeting
WILEY-V C H VERLAG GMBH. 2008: 473–77
View details for DOI 10.1002/pssc.200777468
View details for Web of Science ID 000254423800011
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Magnetic Coupled Spin-torque Devices and Magnetic Ring Oscillator
IEEE International Electron Devices Meeting
IEEE. 2008: 159–162
View details for Web of Science ID 000265829300035
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Tunable narrow-bandwidth source of THz radiation based on frequency down-conversion in periodically structured gallium arsenide
Conference on Terahertz Technology and Applications
SPIE-INT SOC OPTICAL ENGINEERING. 2008
View details for DOI 10.1117/12.763631
View details for Web of Science ID 000254732000004
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GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 mu m
Conference on Vertical-Cavity Surface-Emitting Lasers XII
SPIE-INT SOC OPTICAL ENGINEERING. 2008
View details for DOI 10.1117/12.762311
View details for Web of Science ID 000254737900019
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Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells
JOURNAL OF APPLIED PHYSICS
2007; 102 (11)
View details for DOI 10.1063/1.2817258
View details for Web of Science ID 000251678800024
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Effects of different plasma species (atomic N, metastable N-2(*), and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy
APPLIED PHYSICS LETTERS
2007; 91 (19)
View details for DOI 10.1063/1.2806226
View details for Web of Science ID 000250810300029
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GaAs optical parametric oscillator with circularly polarized and depolarized pump
OPTICS LETTERS
2007; 32 (18): 2735-2737
Abstract
We demonstrate an optical parametric oscillator (OPO) based on GaAs pumped with linearly polarized and circularly polarized light and show that the relative OPO thresholds agree with theoretical expectations. For the circularly polarized pump, the threshold was as low as for the [111]-linearly polarized pump case. The pump was also passed through a Lyot depolarizer to produce pseudo-depolarized light, and the OPO threshold in this case was only 22% higher than that for [001]-linearly polarized pump.
View details for Web of Science ID 000250151900035
View details for PubMedID 17873952
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Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared
IEEE PHOTONICS TECHNOLOGY LETTERS
2007; 19 (17-20): 1631-1633
View details for DOI 10.1109/LPT.2007.904929
View details for Web of Science ID 000250212600114
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Recent progress on 1.55-mu m dilute-nitride lasers
IEEE JOURNAL OF QUANTUM ELECTRONICS
2007; 43 (9-10): 773-785
View details for DOI 10.1109/JQE.2007.902301
View details for Web of Science ID 000250097200005
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High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric
APPLIED PHYSICS LETTERS
2007; 91 (9)
View details for DOI 10.1063/1.2776846
View details for Web of Science ID 000249156100134
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High transmission through ridge nano-apertures on vertical-cavity surface-emitting lasers
OPTICS EXPRESS
2007; 15 (16): 10427-10438
Abstract
We report high-intensity nano-aperture Vertical-Cavity Surface- Emitting Lasers (VCSELs) with sub-100nm near-field spots using ridge apertures. Power transmission efficiency through different ridge apertures, including bowtie, C, H and I-shaped apertures on VCSELs were studied. Significantly higher transmission efficiencies were obtained from the ridge apertures than those from conventional square apertures. Mechanisms for high transmission through the ridge apertures are explained through simulation and waveguide theory. A new quadruple-ridge aperture is proposed and designed via simulation. With the high-intensity and small spot size, VCSELs using these ridge nano-apertures are very promising means to realize applications such as ultrahigh-density near-field optical data storage and ultrahigh-resolution near-field imaging etc.
View details for Web of Science ID 000248753100057
View details for PubMedID 19547395
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Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
2007; 244 (8): 2707-2729
View details for DOI 10.1002/pssb.200675620
View details for Web of Science ID 000248712800006
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Evanescent-coupled GaInNAsSb in-line fibre photodetectors
IET OPTOELECTRONICS
2007; 1 (4): 175-177
View details for DOI 10.1049/iet-opt:20060065
View details for Web of Science ID 000249040100006
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High-intensity bowtie-shaped nano-aperture vertical-cavity surface-emitting laser for near-field optics
OPTICS LETTERS
2007; 32 (14): 1995-1997
Abstract
We report a high-intensity nano-aperture vertical-cavity surface-emitting laser (VCSEL) utilizing a bowtie-shaped aperture. A maximum power of 188 microW is achieved from a 180 nm bowtie aperture at a wavelength of 970 nm. The near-field full width at half-maximum intensity spot size 20 nm away from the bowtie aperture is 64 nm x 66 nm from simulation, and the peak near-field intensity is estimated to be as high as 47 mW/microm(2). This intensity is high enough to realize near-field optical recording, and the small spot size corresponds to storage densities up to 150 Gbits/in(2). The bowtie-aperture VCSEL also enables other applications, such as compact high-intensity probes for ultrahigh-resolution near-field imaging and single molecule fluorescence and spectroscopy.
View details for Web of Science ID 000248669200013
View details for PubMedID 17632621
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Annealing condition optimization and electrical characterization of amorphous LaAlO3/GaAs metal-oxide-semiconductor capacitors
APPLIED PHYSICS LETTERS
2007; 90 (24)
View details for DOI 10.1063/1.2748308
View details for Web of Science ID 000247305400102
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Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers
APPLIED PHYSICS LETTERS
2007; 90 (23)
View details for DOI 10.1063/1.2746944
View details for Web of Science ID 000247145500019
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Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
JOURNAL OF APPLIED PHYSICS
2007; 101 (11)
View details for DOI 10.1063/1.2744490
View details for Web of Science ID 000247306000174
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High-intensity C-shaped nanoaperture vertical-cavity surface-emitting laser with controlled polarization
APPLIED PHYSICS LETTERS
2007; 90 (19)
View details for DOI 10.1063/1.2737938
View details for Web of Science ID 000246413400010
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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (similar to 80 nm) Si1-xGex step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor applications
24th North American Conference on Molecular Beam Epitaxy (NAMBE 2006)
A V S AMER INST PHYSICS. 2007: 1098–1102
View details for DOI 10.1116/1.2713119
View details for Web of Science ID 000247551300083
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Optical modulator on silicon employing germanium quantum wells
OPTICS EXPRESS
2007; 15 (9): 5851-5859
Abstract
We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers. The peak contrast ratio is 7.3 dB at 1457 nm for a 10 V swing, and exceeds 3 dB from 1441 nm to 1461 nm. The novel side-entry structure employs an asymmetric Fabry-Perot resonator at oblique incidence. Unlike waveguide modulators, the design is insensitive to positional misalignment, maintaining > 3 dB contrast while translating the incident beam 87 mum and 460 mum in orthogonal directions. Since the optical ports are on the substrate edges, the wafer top and bottom are left free for electrical interconnections and thermal management.
View details for Web of Science ID 000246395000064
View details for PubMedID 19532843
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Integrated semiconductor optical sensors for cellular and neural imaging
Biomedical Optics Topical Meeting of the Optical-Society-of-America
OPTICAL SOC AMER. 2007: 1881–89
Abstract
We review integrated optical sensors for functional brain imaging, localized index-of-refraction sensing as part of a lab-on-a-chip, and in vivo continuous monitoring of tumor and cancer stem cells. We present semiconductor-based sensors and imaging systems for these applications. Measured intrinsic optical signals and tissue optics simulations indicate the need for high dynamic range and low dark-current neural sensors. Simulated and measured reflectance spectra from our guided resonance filter demonstrate the capability for index-of-refraction sensing on cellular scales, compatible with integrated biosensors. Finally, we characterized a thermally evaporated emission filter that can be used to improve sensitivity for in vivo fluorescence sensing.
View details for PubMedID 17356634
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Growth of GaAs with orientation-patterned structures for nonlinear optics
14th International Conference on Molecular Beam Epitaxy (MBE XIV)
ELSEVIER SCIENCE BV. 2007: 163–167
View details for DOI 10.1016/j.jcrysgro.2006.11.315
View details for Web of Science ID 000246015800038
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Conduction band offset for Ga0.62In0.38NxAs0.991-xSb0.009/GaNyAs1-y/GaAs systems with the ground state transition at 1.5-1.65 mu m
APPLIED PHYSICS LETTERS
2007; 90 (13)
View details for DOI 10.1063/1.2716366
View details for Web of Science ID 000245317100026
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Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance
APPLIED PHYSICS LETTERS
2007; 90 (6)
View details for DOI 10.1063/1.2437729
View details for Web of Science ID 000244162300019
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The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance
2nd International Workshop on Modulation Spectroscopy of Semiconductor Structures
WILEY-V C H VERLAG GMBH. 2007: 543–46
View details for DOI 10.1002/pssa.200673291
View details for Web of Science ID 000244509300033
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Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content
2nd International Workshop on Modulation Spectroscopy of Semiconductor Structures
WILEY-V C H VERLAG GMBH. 2007: 364–72
View details for DOI 10.1002/pssa.200673954
View details for Web of Science ID 000244509300007
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Optical link on silicon employing Ge/SiGe quantum well structures
20th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
IEEE. 2007: 852–853
View details for Web of Science ID 000259345200427
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GaAs Optical Parametric Oscillator with a Circularly Polarized Pump
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
IEEE. 2007: 113–114
View details for Web of Science ID 000268751000057
- The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects 2007
- GaIn) (NAsSb): MBE growth, heterostructure and nanophotonic devices International J. Nanoscience 2007; 3-4 (6): 269-274
- Terahertz wave generation in orientation-patterned GaAs using resonantly enhanced scheme 2007
- Optical Analogue to Electromagnetically Induced Transparency in Photonic Crystals, Simulation and Experiments Technical Digest OSA 2007 Slow and Fast Light, SWB2 2007
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New Light from Gallium Arsenide: Micro-Structured GaAs for Mid-IR and THz-Wave Generation
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
IEEE. 2007: 111–112
View details for Web of Science ID 000268751000056
- A highly stable evanescently-coupled hybrid fibre semiconductor laser design 2007
- Compact Semiconductor Bioluminescence Bio-sensors Technical Digest Frontiers in Optics, (Optical Society of America), paper JMD5 2007
- Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications Frontiers in Molecular-Beam Epitaxy toward Noverl Devices edited by Grahn, H., Koch, R., Trampert, A. Wiley VCH, Berlin, Germany. 2007
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Optical Characterization and Sensitivity Evaluation of Guided-Resonances in Photonic Crystal Slabs for Biosensing Applications
Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
IEEE. 2007: 993–994
View details for Web of Science ID 000268751000499
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Thermally induced relaxation in GaInNAsSb quantum well structures
Symposium on Semiconductor Defect Engineering Materials, Synthetic Structures and Devices II held at the 2007 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 2007: 105–110
View details for Web of Science ID 000250474700014
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Sensitivity analysis of a photonic crystal structure for index-of-refraction sensing
Conference on Nanoscale Imaging, Spectroscopy, Sensing, and Actuation for Biomedical Applications IV
SPIE-INT SOC OPTICAL ENGINEERING. 2007
View details for DOI 10.1117/12.705670
View details for Web of Science ID 000245976200016
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(GaIn)(NAsSb): MBE growth, heterostructure and nanophotonic devices
13th International Symposium on Nanstructures - Physics and Technology
WORLD SCIENTIFIC PUBL CO PTE LTD. 2007: 269–74
View details for Web of Science ID 000255632300020
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Terahertz wave generation in orientation-patterned GaAs using resonantly enhanced scheme
Conference on Nonlinear Frequency Generation and Conversion - Materials, Devices, and Applications VI
SPIE-INT SOC OPTICAL ENGINEERING. 2007
View details for DOI 10.1117/12.702302
View details for Web of Science ID 000245827000007
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The quantum confined Stark effect in Ge/SiGe quantum wells: An efficient electroabsorption mechanism for silicon-based applications
4th IEEE International Conference on Group IV Photonics
IEEE. 2007: 178–180
View details for Web of Science ID 000253465500060
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Contactless electroreflectance of GaInNAsSb/GaAs single quantum wells with indium content of 8%-32%
JOURNAL OF APPLIED PHYSICS
2007; 101 (1)
View details for DOI 10.1063/1.2382721
View details for Web of Science ID 000243585200024
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New THz sources for bio-medical imaging
Conference on Novel in - Plane Semiconductor Lasers VI
SPIE-INT SOC OPTICAL ENGINEERING. 2007
View details for DOI 10.1117/12.714266
View details for Web of Science ID 000246393700022
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High-intensity bowtie nano-aperture Vertical-Cavity Surface-Emitting Laser for ultrahigh-density near-field optical data storage
Topical Meeting on Optical Data Storage
SPIE-INT SOC OPTICAL ENGINEERING. 2007
View details for DOI 10.1117/12.738952
View details for Web of Science ID 000250199900039
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Enhanced second-harmonic generation in AlGaAs/AlxOy tightly confining waveguides and resonant cavities
OPTICS LETTERS
2006; 31 (24): 3626-3628
Abstract
We demonstrate second-harmonic generation (SHG) from sub-micrometer-sized AlGaAs/AlxOy artificially birefringent waveguides. The normalized conversion efficiency is the highest ever reported. We further enhanced the SHG using a waveguide-embedded cavity formed by dichroic mirrors. Resonant enhancements as high as approximately 10x were observed. Such devices could be potentially used as highly efficient, ultracompact frequency converters in integrated photonic circuits.
View details for Web of Science ID 000242560400022
View details for PubMedID 17130925
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Dichroic mirror embedded in a submicrometer waveguide for enhanced resonant nonlinear optical devices
OPTICS LETTERS
2006; 31 (22): 3285-3287
Abstract
We report the design, fabrication and characterization of novel dichroic mirrors embedded in a tightly confining AlGaAs/Al(x)O(y) waveguide. Reflection at the first-harmonic wavelength as high as 93% is achieved, while high transmission is maintained at the second-harmonic wavelength. The measured cavity spectrum is in excellent agreement with finite-difference time-domain simulations. Such a mirror is essential for achieving resonant enhancement of second-harmonic generation.
View details for Web of Science ID 000241799700022
View details for PubMedID 17072398
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Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2006; 12 (6): 1503-1513
View details for DOI 10.1109/JSTQE.2006.883146
View details for Web of Science ID 000243013700023
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Long-wave IR chemical sensing based on difference frequency generation in orientation-patterned GaAs
APPLIED PHYSICS B-LASERS AND OPTICS
2006; 85 (2-3): 199-206
View details for DOI 10.1007/s00340-006-2311-1
View details for Web of Science ID 000240724900005
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Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms
Symposium on Current Trends in Optical and X-Ray Meterology of Advanced Materials for Nanoscale Devices held at the 2005 MRS Spring Meeting
ELSEVIER SCIENCE BV. 2006: 152–57
View details for DOI 10.1016/j.apsusc.2006.05.111
View details for Web of Science ID 000242317500026
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InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition
APPLIED PHYSICS LETTERS
2006; 89 (16)
View details for DOI 10.1063/1.2363959
View details for Web of Science ID 000241405200124
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Terahertz-wave generation in quasi-phase-matched GaAs
APPLIED PHYSICS LETTERS
2006; 89 (14)
View details for DOI 10.1063/1.2357551
View details for Web of Science ID 000241056900019
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InSb and InSb : N multiple quantum dots
APPLIED PHYSICS LETTERS
2006; 89 (13)
View details for DOI 10.1063/1.2357546
View details for Web of Science ID 000240875800115
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Mid-infrared luminescence of an InNAsSb/InAs single quantum well grown by molecular beam epitaxy
APPLIED PHYSICS LETTERS
2006; 89 (12)
View details for DOI 10.1063/1.2356102
View details for Web of Science ID 000240680300041
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Neural stimulation with a carbon nanotube microelectrode array
NANO LETTERS
2006; 6 (9): 2043-2048
Abstract
We present a novel prototype neural interface using vertically aligned multiwalled carbon nanotube (CNT) pillars as microelectrodes. Functionalized hydrophilic CNT microelectrodes offer a high charge injection limit (1-1.6 mC/cm2) without faradic reactions. The first repeated in vitro stimulation of hippocampal neurons with CNT electrodes is demonstrated. These results suggest that CNTs are capable of providing far safer and more efficacious solutions for neural prostheses than previous metal electrode approaches.
View details for DOI 10.1021/nl061241t
View details for Web of Science ID 000240465100037
View details for PubMedID 16968023
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Dilute magnetic semiconductors based on InN
International Symposium on Structure and Dynamics on the Nanometer Scale (SDNS)
TAYLOR & FRANCIS LTD. 2006: 785–91
View details for DOI 10.1080/01411590601124796
View details for Web of Science ID 000243502200011
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Optoelectronic switches based on diffusive conduction
JOURNAL OF APPLIED PHYSICS
2006; 100 (4)
View details for DOI 10.1063/1.2234818
View details for Web of Science ID 000240236800008
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An evanescent-coupling approach to making stable fiber-coupled semiconductor lasers
APPLIED PHYSICS LETTERS
2006; 89 (4)
View details for DOI 10.1063/1.2234591
View details for Web of Science ID 000239376500005
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Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes
APPLIED PHYSICS LETTERS
2006; 88 (24)
View details for DOI 10.1063/1.2213176
View details for Web of Science ID 000238314800041
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Interband transitions in GaN0.02As0.98-xSbx/GaAs (0 < x <= 0.11) single quantum wells studied by contactless electroreflectance spectroscopy
PHYSICAL REVIEW B
2006; 73 (24)
View details for DOI 10.1103/PhysRevB.73.245413
View details for Web of Science ID 000238696900111
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Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells
APPLIED PHYSICS LETTERS
2006; 88 (22)
View details for DOI 10.1063/1.2208937
View details for Web of Science ID 000238001900031
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Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications
APPLIED PHYSICS LETTERS
2006; 88 (22)
View details for DOI 10.1063/1.2208375
View details for Web of Science ID 000238001900015
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Band gap discontinuity in Ga0.9In0.1N0.027As0.973-xSbx/GaAs single quantum wells with 0 <= x < 0.06 studied by contactless electroreflectance spectroscopy
APPLIED PHYSICS LETTERS
2006; 88 (22)
View details for DOI 10.1063/1.2208949
View details for Web of Science ID 000238001900013
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The role of antimony on properties of widely varying GaInNAsSb compositions
JOURNAL OF APPLIED PHYSICS
2006; 99 (9)
View details for DOI 10.1063/1.2191745
View details for Web of Science ID 000237682900024
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Structural and magnetic properties of Cr and Mn doped InN
3rd Moscow International Symposium on Magnetism (MISM 2005)
ELSEVIER SCIENCE BV. 2006: 7–11
View details for DOI 10.1016/j.jmmm.2005.10.022
View details for Web of Science ID 000236596100003
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Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy
23rd North American Conference on Molecular Beam Epitaxy
A V S AMER INST PHYSICS. 2006: 1644–48
View details for DOI 10.1116/1.2192537
View details for Web of Science ID 000238790000109
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Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy
23rd North American Conference on Molecular Beam Epitaxy
A V S AMER INST PHYSICS. 2006: 1540–43
View details for DOI 10.1116/1.2190664
View details for Web of Science ID 000238790000085
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Biomedical terahertz imaging with a quantum cascade laser
APPLIED PHYSICS LETTERS
2006; 88 (15)
View details for DOI 10.1063/1.2194229
View details for Web of Science ID 000236796400112
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GalnNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm
ELECTRONICS LETTERS
2006; 42 (5): 282-283
View details for DOI 10.1049/el:20064455
View details for Web of Science ID 000236537200018
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Room-temperature continuous-wave 1.55 mu m GalnNAsSb laser on GaAs
ELECTRONICS LETTERS
2006; 42 (3): 156-157
View details for DOI 10.1049/el:20064022
View details for Web of Science ID 000235479100020
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Integrated photonic switches for nanosecond packet-switched optical wavelength conversion
OPTICS EXPRESS
2006; 14 (1): 361-368
Abstract
We present a multifunctional photonic switch that monolithically integrates an InGaAsP/InP quantum well electroabsorption modulator and an InGaAs photodiode as a part of an on-chip, InP optoelectronic circuit. The optical multifunctionality of the switch offers many configurations to allow for different optical network functions on a single chip. Here we experimentally demonstrate GHz-range optical wavelength-converting switching with only ~10 mW of absorbed input optical power, electronically controlled packet switching with a reconfiguration time of <2.5 ns, and optically controlled packet switching in <300 ps.
View details for Web of Science ID 000234538800040
View details for PubMedID 19503349
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Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions
ELECTRONICS LETTERS
2006; 42 (1): 52-54
View details for DOI 10.1049/el:20063572
View details for Web of Science ID 000235322600034
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Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.
Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Conference
2006; 1: 1025-1028
Abstract
Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.
View details for PubMedID 17946016
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Dilute nitride lasers and photodetectors
Conference on Optical Fiber Communications/National Fiber Optic Engineers Conference
OPTICAL SOC AMERICA. 2006: 1643–1645
View details for Web of Science ID 000259602601043
- A highly stable evanescently-coupled fiber semiconductor laser 2006
- Low-threshold CW 1.55- mu m GaAs-based lasers 2006
- A high-intensity nano-aperture vertical-cavity surface-emitting laser with controlled polarization 2006
- Self-aligned via and trench for metal contact in III-V semiconductor devices J. Vac. Sci. Technol. 2006; 3 (24): 1117-122
- Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs Electron. Lett. 2006; 3 (42): 156-7
- Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions Electron. Lett. 2006; 1 (42): 52-4
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Low-threshold CW 1.55-mu m GaAs-based lasers
Conference on Optical Fiber Communications/National Fiber Optic Engineers Conference
OPTICAL SOC AMERICA. 2006: 1646–1648
View details for Web of Science ID 000259602601044
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Tunable THz source based on frequency conversion in quasi-phasematched GaAs
Conference on Optical Methods in the Life Sciences
SPIE-INT SOC OPTICAL ENGINEERING. 2006
View details for DOI 10.1117/12.692053
View details for Web of Science ID 000243909000017
- Very Low-Threshold 1.55-μm Dilute-Nitride Lasers 2006
- New light from gallium arsenide: micro-structured GaAs for mid-IR and THz-wave generation 2006
- Ge/SiGe quantum confined Stark effect modulators on silicon 2006
- Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs J. Phys.: Con. Mat. 2006; 17 (18): 4397-406
- Structural and magnetic properties of Cr and Mn doped InN J. Mag. Magnetic Materials 2006; 1 (300): 7-11
- High-power source of THz radiation based on orientation-patterned GaAs pumped by a fiber laser Optics Express 2006: 4439-444
- GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm Electron. Lett. 2006; 5 (42): 282-3
- Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy J. Vac. Sci. Technol. 2006; 3 (24): 1540-43
- Monolithic GaInNAsSb vertical cavity surface emitting lasers at 1534 nm 2006
- Investigation of nitrogen induced closely coupled Sb based quantum dots for infrared sensors application 2006
- GaAs optical parametric oscillator with a circularly polarized pump 2006
- 0.8-3.5 THz source based on fiber-laser pumped orientation-patterned GaAs 2006
- Standing-wave Fourier transform interferometer with an HPT IEEE Photon. Techn. Lett. 2006; 1 (18): 40-2
- Guided-resonance in photonic crystal slabs for biosensing applications 2006
- Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy J. Vac. Sci. Techn. 2006; 3 (B24): 1644-8
- Green emission from InP-GaP quantum-dot light-emitting diodes IEEE Photon. Techn. Lett. 2006; 18: 895-897
- Tunable THz source based on frequency conversion in quasi-phase-matched GaAs 2006
- Temperature and Humidity Dependent Reliability Analysis of RGB LED Chip 2006
- Nonlinear optical effects in InxGa(1-x)As quantum systems for saturable absorbers 2006
- Dilute nitride lasers and photodetectors 2006
- Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 µm Solid State Communic. 2006; 1 (137): 138-141
- Biomedical terahertz imaging with a quantum cascade laser Appl. Phys. Lett. 2006; 15 (88): 1539031-3
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Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 mu m
SOLID STATE COMMUNICATIONS
2006; 137 (3): 138-141
View details for DOI 10.1016/j.ssc.2005.11.006
View details for Web of Science ID 000234628100008
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Optical parametric generation of a mid-infrared continuum in orientation-patterned GaAs
OPTICS LETTERS
2006; 31 (1): 71-73
Abstract
We have generated an ultrabroad mid-infrared continuum by using single-pass optical parametric generation (OPG) in orientation-patterned GaAs (OP-GaAs). The spectrum spans more than an octave, from 4.5 to 10.7 microm, measured 20 dB down from the peak. The 17.5 mm long, 0.5 mm thick, all-epitaxially-grown OP-GaAs sample with a 166.6-microm quasi-phase-matching period was pumped with 3.1-3.3 microm wavelength, 1 ps pulses up to 2 microJ in energy. The OPG threshold was observed at 55 nJ pump energy with the pump polarized along the [111] crystal direction. The slope efficiency near threshold was 51%, and the external conversion efficiency was as high as 15%.
View details for Web of Science ID 000234181600023
View details for PubMedID 16419881
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GaInNAsSb solar cells grown by molecular beam epitaxy
4th World Conference on Photovoltaic Energy Conversion
IEEE. 2006: 783–786
View details for Web of Science ID 000241251600200
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Compact standing-wave Fourier-transform interferometer with harmonic spectral analysis
Conference on Coherence Domain Optical Methods and Optical Coherence Tomography in Biomedicine X
SPIE-INT SOC OPTICAL ENGINEERING. 2006
View details for DOI 10.1117/12.649113
View details for Web of Science ID 000237132000041
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Integrated biomedical nanosensor using guided resonance in photonic crystal structures
Conference on Nanobiophotonics and Biomedical Applications III
SPIE-INT SOC OPTICAL ENGINEERING. 2006
View details for DOI 10.1117/12.647312
View details for Web of Science ID 000237699500014
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Ge/SiGe quantum-confined stark modulators on silicon
19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
IEEE. 2006: 903–904
View details for Web of Science ID 000246167900456
- Colour-tunable light-emitting diodes based on InP/GaP nanostructures Nanotechnology 2006; 15 (17): 3703-06
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Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function
28th Annual International Conference of the IEEE-Engineering-in-Medicine-and-Biology-Society
IEEE. 2006: 2443–2446
View details for Web of Science ID 000247284702192
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Germanium electroabsorption devices on silicon for optical interconnects
Conference on Silicon Photonics
SPIE-INT SOC OPTICAL ENGINEERING. 2006
View details for DOI 10.1117/12.674733
View details for Web of Science ID 000237274900009
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Comparative analysis of bio-medical imaging at 3.7 terahertz with a high power quantum cascade laser
19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
IEEE. 2006: 231–232
View details for Web of Science ID 000246167900117
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A C-shaped nanoaperture Vertical-Cavity Surface-Emitting Laser for high-density near-field optical data storage
Conference on Vertical-Cavity Surface-Emitting Lasers X
SPIE-INT SOC OPTICAL ENGINEERING. 2006
View details for DOI 10.1117/12.645083
View details for Web of Science ID 000237084500016
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Bio-medical imaging with a terahertz quantum cascade laser
Conference on Nanobiophotonics and Biomedical Applications III
SPIE-INT SOC OPTICAL ENGINEERING. 2006
View details for DOI 10.1117/12.647233
View details for Web of Science ID 000237699500007
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Efficient continuous wave second harmonic generation pumped at 1.55 mu m in quasi-phase-matched AlGaAs waveguides
OPTICS EXPRESS
2005; 13 (26): 10742-10748
Abstract
We have fabricated quasi-phase-matched AlGaAs waveguides for continuous-wave second-harmonic generation (SHG) pumped around 1.55 microm. We find that the losses, which limit the conversion efficiency of this type of waveguide, are resulted from two corrugations--the initial template corrugation and the regrowth-induced domain-boundary corrugations. We are able to reduce the waveguide loss by improving the growth conditions. The waveguide loss is 6-7 dB/cm at 1.55 microm, measured using the Fabry-Perot method. A record internal SHG conversion efficiency of 23 %W-1 for AlGaAs waveguides is achieved using a 5-mm-long waveguide with a pump wavelength of 1.568 microm.
View details for Web of Science ID 000234263000032
View details for PubMedID 19503290
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Novel on-chip fully monolithic integration of GaAs devices with completely fabricated SiCMOS circuits
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2005; 11 (6): 1278-1283
View details for DOI 10.1109/JSTQE.2005.860991
View details for Web of Science ID 000235144100005
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Intimate monolithic integration of chip-scale photonic circuits
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2005; 11 (6): 1255-1265
View details for DOI 10.1109/JSTQE.2005.860995
View details for Web of Science ID 000235144100003
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Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
NATURE
2005; 437 (7063): 1334-1336
Abstract
Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated; but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimetres) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism, which allows modulator structures with only micrometres of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor; such semiconductors often display much weaker optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.
View details for DOI 10.1038/nature04204
View details for PubMedID 16251959
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Spectral shaping of electrically controlled MSM-based tunable photodetectors
IEEE PHOTONICS TECHNOLOGY LETTERS
2005; 17 (10): 2158-2160
View details for DOI 10.1109/LPT.2005.854352
View details for Web of Science ID 000232149600051
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Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells
JOURNAL OF APPLIED PHYSICS
2005; 98 (6)
View details for DOI 10.1063/1.2060940
View details for Web of Science ID 000232226000033
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On the temperature sensitivity of 1.5-mu m GaInNAsSb lasers
19th IEEE International Semiconductor Laser Conference
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2005: 1089–98
View details for DOI 10.1109/JSTQE.2005.853852
View details for Web of Science ID 000234639100025
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Arsenic surface segregation during in situ doped silicon and Si1-xGex molecular beam epitaxy
JOURNAL OF CRYSTAL GROWTH
2005; 281 (2-4): 334-343
View details for DOI 10.1016/j.jcrysgro.2005.04.066
View details for Web of Science ID 000231011600019
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Effects of growth temperature on the structural and optical properties of 1.55 mu m GaInNAsSb quantum wells grown on GaAs
APPLIED PHYSICS LETTERS
2005; 87 (2)
View details for DOI 10.1063/1.1993772
View details for Web of Science ID 000230435800017
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A single transverse-mode monolithically integrated long vertical-cavity surface-emitting laser
IEEE PHOTONICS TECHNOLOGY LETTERS
2005; 17 (7): 1366-1368
View details for DOI 10.1109/LPT.2005.848277
View details for Web of Science ID 000230052900002
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MSM-based integrated CMOS wavelength-tunable optical receiver
IEEE PHOTONICS TECHNOLOGY LETTERS
2005; 17 (6): 1271-1273
View details for DOI 10.1109/LPT.2005.846579
View details for Web of Science ID 000229850300045
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Improved optical quality of GaNAsSb in the dilute Sb limit
JOURNAL OF APPLIED PHYSICS
2005; 97 (11)
View details for DOI 10.1063/1.1926398
View details for Web of Science ID 000229804700026
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Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides
APPLIED PHYSICS LETTERS
2005; 86 (22)
View details for DOI 10.1063/1.1940126
View details for Web of Science ID 000229590100014
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Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs
22nd North American Conference on Molecular Beam Epitaxy (NAMBE 2004)
A V S AMER INST PHYSICS. 2005: 1320–23
View details for DOI 10.1116/1.1878995
View details for Web of Science ID 000230479600087
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Using beam.flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
2005; 23 (3): 460-464
View details for DOI 10.1116/1.1881635
View details for Web of Science ID 000229124000013
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Nitrogen plasma optimization for high-quality dilute nitrides
13th International Conference on Molecular Beam Epitaxy (MBE XII)
ELSEVIER SCIENCE BV. 2005: 229–33
View details for DOI 10.1016/j.jcrysgro.2004.12.060
View details for Web of Science ID 000228916300041
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Protecting wafer surface during plasma ignition using an arsenic cap
22nd North American Conference on Molecular Beam Epitaxy (NAMBE 2004)
A V S AMER INST PHYSICS. 2005: 1324–27
View details for DOI 10.1116/1.1914820
View details for Web of Science ID 000230479600088
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The opportunities, successes and challenges for GaInNAsSb
13th International Conference on Molecular Beam Epitaxy (MBE XII)
ELSEVIER SCIENCE BV. 2005: 3–17
View details for DOI 10.1016/j.jcrysgro.2004.12.050
View details for Web of Science ID 000228916300002
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Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 mu m
22nd North American Conference on Molecular Beam Epitaxy (NAMBE 2004)
A V S AMER INST PHYSICS. 2005: 1337–40
View details for DOI 10.1116/1.1914825
View details for Web of Science ID 000230479600091
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Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy
22nd North American Conference on Molecular Beam Epitaxy (NAMBE 2004)
A V S AMER INST PHYSICS. 2005: 1328–32
View details for DOI 10.1116/1.1881592
View details for Web of Science ID 000230479600089
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Recombination, gain, band structure, efficiency, and reliability of 1.5-mu m GaInNAsSb/GaAs lasers
JOURNAL OF APPLIED PHYSICS
2005; 97 (8)
View details for DOI 10.1063/1.1873035
View details for Web of Science ID 000228729500001
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Monolithically integrated semiconductor fluorescence sensor for microfluidic applications
SENSORS AND ACTUATORS B-CHEMICAL
2005; 105 (2): 393-399
View details for DOI 10.1016/j.snb.2004.06.028
View details for Web of Science ID 000227882000041
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Nearest-neighbor distributions in Ga1-xInxNyAs1-y and Ga1-xInxNyAs1-y-zSbz thin films upon annealing
PHYSICAL REVIEW B
2005; 71 (12)
View details for DOI 10.1103/PhysRevB.71.125309
View details for Web of Science ID 000228923300082
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Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance
APPLIED PHYSICS LETTERS
2005; 86 (9)
View details for DOI 10.1063/1.1873052
View details for Web of Science ID 000228991600015
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Mn- and Cr-doped InN: A promising diluted magnetic semiconductor material
3rd International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors
SPRINGER/PLENUM PUBLISHERS. 2005: 41–46
View details for DOI 10.1007/s10948-005-2148-6
View details for Web of Science ID 000228131800009
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Reconfigurable magnetologic computing using the spin flop switching of a magnetic random access memory cell
APPLIED PHYSICS LETTERS
2005; 86 (1)
View details for DOI 10.1063/1.1842858
View details for Web of Science ID 000226701200088
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1.55 mu m GaInNAsSb lasers on GaAs
Conference on Lasers and Electro-Optics (CLEO)
OPTICAL SOC AMERICA. 2005: 89–91
View details for Web of Science ID 000234819900031
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Growth and characterization of SiGe layers on Ge-lattice-matched substrates by MBE for long wavelength optical devices
Conference on Lasers and Electro-Optics (CLEO)
OPTICAL SOC AMERICA. 2005: 2137–2139
View details for Web of Science ID 000234819902198
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InP based double heterojunction phototransistor with graded emitterbase junction and base-collector junction
Conference on Semiconductor Photodetectors II
SPIE-INT SOC OPTICAL ENGINEERING. 2005: 19–26
View details for DOI 10.1117/12.591118
View details for Web of Science ID 000229435900003
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Highly stable in-line semiconductor fiber laser
Conference on Lasers and Electro-Optics (CLEO)
OPTICAL SOC AMERICA. 2005: 538–540
View details for Web of Science ID 000234819900184
- Reconfigurable magnetologic computing using the spin flop switching of a magnetic random access memory cell Appl. Phys. Lett. 2005; 11 (86): 13502-1-3
- Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance Appl. Phys. Lett. 2005; 86 (091115-17)
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Near-infrared photodetection with molecular beam epitaxy grown extended InGaAs
Symposium on Advanced Devices and Materials for Laser Remote Sensing held at the 2005 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 2005: 195–200
View details for Web of Science ID 000232488200023
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MBE growth of GaAs on Si through direct Ge buffers
Symposium on Materials, Integration and Technology for Monolithic Instruments held at the 2005 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 2005: 77–81
View details for Web of Science ID 000231500700010
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In situ p-n junctions and gated devices in titanium-silicide nucleated Si nanowires
ELECTROCHEMICAL AND SOLID STATE LETTERS
2005; 8 (8): G204-G208
View details for Web of Science ID 000230931300026
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Novel electrically, controlled rapidly wavelength selective photodetection using MSMs
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2005; 11 (1): 184-189
View details for DOI 10.1109/JSTQE.2004.841706
View details for Web of Science ID 000227014900022
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Photoelectronic analog-to-digital conversion: Sampling and quantizing at 100 Gs/s
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
2005; 53 (1): 336-342
View details for DOI 10.1109/TMTT.2004.839923
View details for Web of Science ID 000226343600038
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Linear differential electro-optic conversion of sampled voltage signals using a MSM and multiple quantum well modulators
18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society
IEEE. 2005: 57–58
View details for Web of Science ID 000235109700031
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Spectral shaping of electrically controlled MSM-based rapidly tunable photodetectors
18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society
IEEE. 2005: 55–56
View details for Web of Science ID 000235109700030
- Linear electro-optic conversion of sampled voltage signals using a low-temperature-grown GaAs MSM and a multiple quantum well modulato 2005
- Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets 2005
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Thick lattice-matched GaInNAs films in photodetector applications
Conference on Semiconductor Photodetectors II
SPIE-INT SOC OPTICAL ENGINEERING. 2005: 27–34
View details for DOI 10.1117/12.591315
View details for Web of Science ID 000229435900004
- Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy J. Vac. Sci. Techn. B 2005; 3 (23): 460-4
- Temperature Independence of the Spin Injection Efficiency of a MgO-based Tunnel Spin Injector Appl. Phys. Lett. 2005; 87: 2625031-3
- Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells J. Appl. Phys. 2005; 6 (98): 063527-31
- MSM-based integrated CMOS wavelength-tunable optical receiver IEEE Photon. Techn. Lett. 2005; 6 (17): 1271-3
- In situ p-n junctions and gated devices in titanium-silicide nucleated si nanowires Electrochem Solid-State Lett. 2005; 8 (8): G204-8
- Improved Optical Quality from GaNAsSb in the Dilute Sb Limit J. Appl. Phys. 2005; 11 (97): 113510-1-5
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Single ultrafast diffusive conduction based optoelectronic switch for multi-channel operation
18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society
IEEE. 2005: 734–735
View details for Web of Science ID 000235109700372
- A single transverse-mode monolithically integrated long vertical-cavity surface-emitting laser IEEE Photon. Techn. Lett. 2005; 7 (17): 1366-8
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Widely tunable difference frequency generation in a multi-grating orientation-patterned GaAs
Conference on Lasers and Electro-Optics (CLEO)
OPTICAL SOC AMERICA. 2005: 1306–1308
View details for Web of Science ID 000234819901182
- MBE grown GaInNAs solar cells for multijunction applications 2005
- Fabrication and characterization of tightly confining AlGaAs waveguides and microcavities for nonlinear optical applications 2005
- Extended InGaAs/InGaAs quantum structures for near infrared photodetection beyond 1.9 µm 2005
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Light-emitting diodes based on InP quantum dots in GaP(100)
9th Conference on Light-Emitting Diodes
SPIE-INT SOC OPTICAL ENGINEERING. 2005: 86–92
View details for DOI 10.1117/12.591299
View details for Web of Science ID 000228826900011
- InP based double heterojunction phototransistor with graded emitter-base junction and base-collector junction 2005
- Highly stable in-line semiconductor fiber laser 2005
- Differential Gain and Non-linear Gain Compression of GaInNAsSb/GaAs Lasers at 1.5µm 2005
- Red light-emitting diodes based on InP/GaP quantum dots J. Appl. Phys. 2005; 9 (97): 96106-1-3
- On the temperature sensitivity of 1.5-µm GaInNAsSb lasers IEEE J. Select. Topics Quan. Electron. 2005; 5 (11): 1089-98
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Differential gain and non-linear gain compression of GaInNAsSb/GaAs lasers at 1.5 mu m
Conference on Lasers and Electro-Optics (CLEO)
OPTICAL SOC AMERICA. 2005: 86–88
View details for Web of Science ID 000234819900030
- Increase in spin injection efficiency of a CoFe/MgO(100) tunnel spin injector with thermal annealing Appl. Phys. Lett. 2005; 5 (86): 052901-3
- Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100) Phys. Rev. Lett. 2005; 5 (94): 056601/1-4
- Efficient continuous wave second harmonic generation pumped at 1.55 µm in quasi-phase-matched AlGaAs waveguides Optics Express 2005; 26 (13): 10742-10753
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Mid-IR continuum from an optical parametric generator based on orientation-patterned GaAs (OP-GaAs)
Conference on Lasers and Electro-Optics (CLEO)
OPTICAL SOC AMERICA. 2005: 1294–1296
View details for Web of Science ID 000234819901178
- (GaIn)(NAsSb): the challenges for long wavelength communications devices 2005
- Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy J. Vac. Sci. Techn. B 2005; 3 (23): 1328-32
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Optical parametric oscillator based on orientation-patterned GaAs
Conference on Integrated Optics - Devices, Materials and Technologies IX
SPIE-INT SOC OPTICAL ENGINEERING. 2005: 129–135
View details for DOI 10.1117/12.584599
View details for Web of Science ID 000228895400015
- Spectral shaping of electrically controlled MSM-based tunable photodetectors IEEE Photon. Techn. Lett. 2005; 10 (17): 2158-60
- Self-aligning planarization and passivation for integration applications in III-V semiconductor devices IEEE Trans Semiconductor Manufacturing 2005; 1 (18): 182-89
- Protecting wafer surface during plasma ignition using an arsenic cap J. Vac. Sci. Techn. B 2005; 3 (23): 1324-7
- Novel electrically controlled rapidly wavelength selective photodetection using MSMs IEEE J. Selected Topics in Quantum Electron. 2005; 1 (11): 184-89
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High performance GaInNAsSb/GaAs lasers at 1.5 mu m
Conference on Novel In-Plane Semiconductor Lasers IV
SPIE-INT SOC OPTICAL ENGINEERING. 2005: 180–191
View details for DOI 10.1117/12.591447
View details for Web of Science ID 000228824000020
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Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs band offsets
Symposium on Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices held at the 2005 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 2005: 105–111
View details for Web of Science ID 000231500500016
- Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 µm J. Vac. Sci. Techn. B 2005; 3 (23): 1324-27
- Mn- and Cr-doped InN: A promising diluted magnetic semiconductor material J. Superconductivity 2005; 1 (18): 41-4
- Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides Appl. Phys. Lett. 2005; 22 (86): 221902-1-3
- Intimate monolithic integration of chip-scale photonic circuits IEEE J. Sel. Topics Quant. Electron. 2005; 6 (11): 1255-65
- Growth and magnetism of Cr-doped InN Appl.Phys. Lett. 2005; 6 (87): 1725111-3
- Effects of growth temperature on the structural and optical properties of 1.55 µm GaInNAsSb quantum wells grown on GaAs Appl. Phys. Lett. 2005; 2 (87): 21908-1-3
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A comparison of lattice-matched GaInNAs and metamorphic InGaAs photodetector devices
Symposium on Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices held at the 2005 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 2005: 271–276
View details for Web of Science ID 000231500500039
- High-performance GaInNAsSb/GaAs lasers at 1.5 µm 2005
- Fabrication of a carbon nanotube protruding electrode array for a retinal prosthesis 2005
- 1.55µm GaInNAsSb lasers on GaAs 2005
- Recombination, gain, band structure, efficiency, and reliability of 1.5 µm GaInNAsSb/GaAs lasers J. Appl. Phys. 2005; 8 (97): 083101-16
- Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1.5 µm: The energy level structure and the Stokes shift J. Appl. Phys. 2005; 97: 53515
- Nearest-neighbor distributions in Ga(1-x)InxNyAs(1-y) and Ga(1-x)InxNyAs(1-y-z)Sbz thin films upon annealing Phys. Rev. B. 2005; 12 (71): 125309-18
- Side-coupled fibre semiconductor laser Electron. Lett. 2005; 20 (41): 1128-30
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Multifunctional integrated photonic switches
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2005; 11 (1): 86-96
View details for DOI 10.1109/JSTQE.2004.841715
View details for Web of Science ID 000227014900010
- Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs J. Vac. Sci. Techn. B 2005; 3 (23): 1320-3
- Conductance fluctuations and partially broken spin symmetries in quantum dots Phys. Rev. B 2005; 8 (72): 81305
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Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3-1.55 mu m
JOURNAL OF APPLIED PHYSICS
2004; 96 (11): 6375-6381
View details for DOI 10.1063/1.1807028
View details for Web of Science ID 000225300800066
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Multispectral operation of self-assembled InGaAs quantum-dot infrared photodetectors
APPLIED PHYSICS LETTERS
2004; 85 (18): 4154-4156
View details for DOI 10.1063/1.1810208
View details for Web of Science ID 000224894900066
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Multicolor InGaAs quantum-dot infrared photodetectors
IEEE PHOTONICS TECHNOLOGY LETTERS
2004; 16 (11): 2538-2540
View details for DOI 10.1109/LPT.2004.835197
View details for Web of Science ID 000224566500046
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GaInNAs(Sb) long wavelength communications lasers
Symposium on Dilute Nitride and Related Mismatched Semiconductor Alloys held at the 2004 Spring Meeting of the EMRS
INST ENGINEERING TECHNOLOGY-IET. 2004: 407–16
View details for DOI 10.1049/ip-opt:20040937
View details for Web of Science ID 000225685800038
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High-performance 1.5 mu m GaInNAsSb lasers grown on GaAs
ELECTRONICS LETTERS
2004; 40 (19): 1186-1187
View details for Web of Science ID 000226486000018
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Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate
OPTICS EXPRESS
2004; 12 (17): 3967-3971
Abstract
We present a fully monolithically integrated long vertical cavity surface emitting laser using an InGaAs/GaAs/AlGaAs gain medium directly bonded to a glass substrate with a concave micromirror. The lasing wavelength is 980nm with a threshold of 20mA for a 52microm mesa, differential quantum efficiency of 58%, and maximum output power of 39mW.
View details for Web of Science ID 000223469000011
View details for PubMedID 19483933
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Optical parametric oscillation in quasi-phase-matched GaAs
OPTICS LETTERS
2004; 29 (16): 1912-1914
Abstract
We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilizes an all-epitaxially-grown orientation-patterned GaAs crystal that is 0.5 mm thick, 5 mm wide, and 11 mm long, with a domain reversal period of 61.2 microm. Tuning either the near-IR pump wavelength between 1.8 and 2 microm or the temperature of the GaAs crystal allows the mid-IR output to be tuned between 2.28 and 9.14 microm, which is limited only by the spectral range of the OPO mirrors. The pump threshold of the singly resonant OPO is 16 microJ for the 6-ns pump pulses, and the photon conversion slope efficiency reaches 54%. We also show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.
View details for Web of Science ID 000223074600026
View details for PubMedID 15357357
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Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300-1600 nm
APPLIED PHYSICS LETTERS
2004; 85 (6): 902-904
View details for DOI 10.1063/1.1777825
View details for Web of Science ID 000223109500017
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Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches
IEEE JOURNAL OF QUANTUM ELECTRONICS
2004; 40 (6): 800-804
View details for DOI 10.1109/JQE.2004.828234
View details for Web of Science ID 000221857800024
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Low-threshold continuous-wave 1.5-mu m GaInNAsSb lasers grown on GaAs
IEEE JOURNAL OF QUANTUM ELECTRONICS
2004; 40 (6): 656-664
View details for DOI 10.1109/JQE.2004.828249
View details for Web of Science ID 000221857800007
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Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy
21st North American Conference on Molecular Beam Epitaxy (NAMBE 2003)
A V S AMER INST PHYSICS. 2004: 1588–92
View details for DOI 10.1116/1.1650853
View details for Web of Science ID 000222481400146
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Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy
21st North American Conference on Molecular Beam Epitaxy (NAMBE 2003)
A V S AMER INST PHYSICS. 2004: 1450–54
View details for DOI 10.1116/1.1669670
View details for Web of Science ID 000222481400113
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Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 mu m
21st North American Conference on Molecular Beam Epitaxy (NAMBE 2003)
A V S AMER INST PHYSICS. 2004: 1463–67
View details for DOI 10.1116/1.1691411
View details for Web of Science ID 000222481400116
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GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 mu m
21st North American Conference on Molecular Beam Epitaxy (NAMBE 2003)
A V S AMER INST PHYSICS. 2004: 1562–64
View details for DOI 10.1116/1.1714940
View details for Web of Science ID 000222481400140
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Fabrication and characterization of a carbon nanotube microelectrode array for retinal prostheses
Annual Meeting of the Association-for-Research-in-Vision-and-Ophthalmology
ASSOC RESEARCH VISION OPHTHALMOLOGY INC. 2004: U379–U379
View details for Web of Science ID 000223338201366
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High-speed optical switching based on diffusive conduction in an optical waveguide with surface-normal optical control
JOURNAL OF APPLIED PHYSICS
2004; 95 (5): 2258-2263
View details for DOI 10.1063/1.1643789
View details for Web of Science ID 000189139600009
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High-frequency modulation characteristics of 1.3-mu m InGaAs quantum dot lasers
IEEE PHOTONICS TECHNOLOGY LETTERS
2004; 16 (2): 377-379
View details for DOI 10.1109/LPT.2003.823088
View details for Web of Science ID 000189020000009
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Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting
OPTICS EXPRESS
2004; 12 (2): 310-316
Abstract
We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength conversion across 45 nm between 1525 nm and 1570 nm, and dual-wavelength broadcasting over 20 nm between 1530 nm and 1565 nm, spanning the entire C-band with >10dB RF-extinction ratio and using 3.1-6.7 mW absorbed optical power at 1.25 Gb/s.
View details for Web of Science ID 000188383200011
View details for PubMedID 19471539
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Greater than 10(6) optical isolation in integrated optoelectronic fluorescence sensor.
Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Conference
2004; 3: 2080-2081
Abstract
Integrated optoelectronic sensors hold much potential for bio-medical applications. Our work focuses on the use of semiconductor lasers, photodetectors and filters to create a monolithically integrated near-infrared fluorescence sensor. Previous research has found that the close integration of these components results in large laser background levels from spontaneous emission emitted from the side of the laser and limits sensor sensitivity. This work presents an improved optical blocking structure between the laser and photodetector which results in greater than 10(6) optical isolation. This level of isolation will allow for sensitive fluorescence detection and shows that optoelectronic components can be successfully integrated for such purposes.
View details for PubMedID 17272131
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Side-coupled in-line fiber-semiconductor laser
Conference on Integrated Optics - Devices, Materials and Technology VIII
SPIE-INT SOC OPTICAL ENGINEERING. 2004: 159–166
View details for DOI 10.1117/12.532111
View details for Web of Science ID 000222345000017
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Novel planarization and passivation in the integration of III-V semiconductor devices
Conference on Optoelectronic Integrated Circuits VI
SPIE-INT SOC OPTICAL ENGINEERING. 2004: 81–91
View details for DOI 10.1117/12.539696
View details for Web of Science ID 000222941800009
- A broadly tunable high-resolution IR cavity ring-down spectrometer based on difference frequency generation in orientation-patterned GaAs 2004
- Photoelectronic analog-to-digital conversion: Sampling and quantizing at 100 Gs/s IEEE Trans. Microwave Theory Techn. 2004; 1 (53): 336-42
- Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate Optics Express 2004; 17 (12): 3967-71
- Low-threshold continuous-wave 1.5-µm GaInNAsSb lasers grown on GaAs IEEE J. Quantum Electron. 2004; 6 (40): 656-64
- A new route to zero-barrier metal source/drain MOSFETs IEEE Trans. Nanotechnology 2004; 1 (3): 98-104
- Monolithic integration of GaAs devices with completely fabricated Si CMOS 2004
- Low threshold, CW, room temperature 1.50 µm GaAs-based lasers 2004
- GaNAs/GaAsSb type II active regions for 1.3-1.5 µm operation 2004
- Growth of III-V Nitrides by Pulsed Laser Deposition (Optoelectronic Properties of Semiconductors and Superlattices; III-V Nitride Semiconductors: Growth and Substrate Issues edited by Omar, M., Ian, M., Breach, F. G. 2004
- Widely tunable Al 2O3-GaAs DBR filters with variable tuning characteristics IEEE J. Selected Topics Quantum Electronics 2004; 3 (10): 614-21
- Integrated semiconductor vertical-cavity surface-emitting lasers and PIN photodetectors for biomedical fluorescence sensing IEEE J Quantum Electron. 2004; 5 (40): 491-8
- High-speed, optical switching based on diffusive conduction in an optical waveguide with surface-normal optical control J. Appl Phys. 2004; 5 (95): 2258-63
- High-performance 1.5 µm GalnNAsSb lasers grown on GaAs Electron. Lett. 2004; 19 (40): 1186-7
- High-frequency modulation characteristics of 1.3-µm InGaAs quantum dot lasers IEEE Photon. Technol. Lett. 2004; 2 (16): 377-379
- Integrated semiconductor bio-fluorescence sensor integrated on micro-fluidic platform 2004
- Side-coupled in-line fiber-semiconductor laser 2004
- Novel scalable wavelength-converting crossbar 2004
- Monolithically integrated long vertical cavity surface laser incorporating a concave micromirror on a glass substrate 2004
- GaInNAs(Sb) long wavelength communications lasers 2004
- Electrically-reconfigurable integrated photonic switches 2004
- The temperature sensitivity of GaAs-based 1.5 µm GaInNAsSb lasers 2004
- Measurements of intrinsic properties of high power CW single quantum well GaInNAsSb/GaAs lasers at 1.5 µm 2004
- GaInNAs and GaInNAsSb Long Wavelength Lasers, Chapter Physics and Applications of Dilute Nitrides edited by Buyanova, I., Chen, W. Taylor and Francis, London, U. K.. 2004: 395–433
- Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches IEEE J. Quantum Electron. 2004; 6 (40): 800-5
- GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 µm J. Vac. Sci. Technol. B 2004; 3 (22): 1562-64
- Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 µm Electron. Lett. 2004; 23 (40): 1487-8
- Comparison of GaNAsSb and GaNAs as Quantum Well Barriers for GaInNAsSb Optoelectronic Devices Operating at 1.3-1.55 µm J. Appl. Phys. 2004; 11 (96): 6375-81
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A broadly tunable, high resolution IR cavity ring-down spectrometer based on difference frequency generation in orientation-patterned GaAs
Conference on Nonlinear Fequency Generation and Conversion
SPIE-INT SOC OPTICAL ENGINEERING. 2004: 112–116
View details for DOI 10.1117/12.531730
View details for Web of Science ID 000222773500014
- Structural characterization of molecular beam epitaxy grown GaInNAs and GaInNAsSb quantum wells by transmission electron microscopy 2004
- Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 µm 2004
- Novel planarization and passivation in the integration of III-V semiconductor devices 2004
- Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm 2004
- The Use of Transmission Electron Microscopy (TEM) in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by MBE J. Vac. Sci. Technol. B 2004; 3 (22): 1588-92
- Multispectral operation of self-assembled InGaAs quantum-dot infrared photodetectors Appl. Phys. Lett. 2004; 18 (85): 4154-56
- Laser background characterization in a monolithically integrated bio-fluorescence sensor 2004
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Tightly confining AlGaAs waveguides and microcavities for optical frequency conversion
Conference on Integrated Optics - Devices, Materials and Technology VIII
SPIE-INT SOC OPTICAL ENGINEERING. 2004: 111–119
View details for DOI 10.1117/12.532124
View details for Web of Science ID 000222345000011
- Scalable wavelength-converting crossbar switches. IEEE Photon. Techn. Lett. 2004; 10 (16): 2305-7
- Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300-1600 nm Appl. Phys. Lett. 2004; 6 (85): 902-4
- Orbital effects of in-plane magnetic fields probed by mesoscopic conductance fluctuations Phys. Rev. B 2004; 12 (69): 121305
- Optically-controlled electroabsorption modulators for unconstrained wavelength conversion Appl. Phys. Lett. 2004; 4 (84): 469-471
- Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy Appl. Phys. Lett. 2004; 11 (84): 1859-61
- Fabrication and characterization of a carbon nanotube microelectrode array for retinal prostheses Investigative Ophthalmology & Visual Science 45 2004; suppl.2 (45): U379
- The role and suppression of carrier leakage in 1.5 µm GaInNAsSb/GaAs lasers 2004
- Progress towards high power 1.5 µm GaInNAsSb/GaAs lasers for Raman amplifiers 2004
- Photodiode-driven quantum-well modulators for C-band wavelength conversion and broadcasting 2004
- Novel electrically controlled rapidly wavelength selective photodetection using MSMs 2004
- Multi-spectral operation of InGaAs quantum dot infrared photodetectors and infrared sensors applications 2004
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Optical parametric oscillator based on microstructured GaAs
Conference on Solid State Laser Technologies and Femtosecond Phenomena
SPIE-INT SOC OPTICAL ENGINEERING. 2004: 63–69
View details for DOI 10.1117/12.578449
View details for Web of Science ID 000226769800008
- GaInNAsSb/GaNAs VCSELs at 1.46 µm 2004
- MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys Dilute Nitride Materials and Devices edited by Henini, M. Elsevier, Amsterdam, The Netherlands. 2004: 502–578
- Long-Wavelength Dilute Nitride-Antimonide Lasers Dilute Nitride Materials and Devices edited by Henini, M. Elsevier, Amsterdam, The Netherlands. 2004: 1–92
- Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 µm J. Vac. Sci. Technol. B 2004; 3 (22): 1463-67
- Single-phase growth studies of GaP on Si by solid-source MBE J. Vac. Sci. Technol. B 2004; 3 (22): 1450-54
- Multicolor InGaAs quantum-dot infrared photodetectors IEEE Photon. Technol. Lett. 2004; 11 (16): 2538-40
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Low threshold, CW, room temperature 1.50 mu m GaAs-based lasers
30th International Symposium on Compound Semiconductors
IEEE. 2004: 180–184
View details for Web of Science ID 000226028400029
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Reduced monomolecular recombination in GaInNAsSb/GaAs lasers at 1.5 mu m
17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
IEEE. 2004: 144–145
View details for Web of Science ID 000225390900072
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Structural characterization of molecular beam epitaxy grown GaInNAs and GaInNAsSb quantum wells by transmission electron microscopy
Symposium on New Materials for Microphotonics held at the 2004 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 2004: 267–272
View details for Web of Science ID 000224428100040
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Integrated bio-fluorescence sensor
16th International Symposium on Microscale Separation and Analysis
ELSEVIER SCIENCE BV. 2003: 103–10
Abstract
Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.
View details for DOI 10.1016/S0021-9673(03)01361-X
View details for PubMedID 14604112
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Nearest-neighbor configuration in (GaIn)(NAs) probed by X-ray absorption spectroscopy
PHYSICAL REVIEW LETTERS
2003; 90 (14)
Abstract
Ga(1-x)In(x)N(y)As(1-y) is a promising material system for the fabrication of inexpensive "last-mile" optoelectronic components. However, details of its atomic arrangement and the relationship to observed optical properties is not fully known. Particularly, a blueshift of emission wavelength is observed after annealing. In this work, we use x-ray absorption fine structure to study the chemical environment around N atoms in the material before and after annealing. We find that as-grown molecular beam epitaxy material consists of a nearly random distribution of atoms, while postannealed material shows segregation of In toward N. Ab initio simulations show that this short-range ordering creates a more thermodynamically stable alloy and is responsible for blueshifting the emission.
View details for DOI 10.1103/PhysRevLett.90.145505
View details for Web of Science ID 000182320100032
View details for PubMedID 12731929
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1.5 mu m GaInNAs(Sb) lasers grown on GaAs by MBE
12th International Conference on Molecular Beam Epitaxy (MBE-XII)
ELSEVIER SCIENCE BV. 2003: 367–71
View details for DOI 10.1016/S0022-0248(02)02446-6
View details for Web of Science ID 000182179800067
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The role of Sb in the MBE growth of (GaIn)(NAsSb)
12th International Conference on Molecular Beam Epitaxy (MBE-XII)
ELSEVIER SCIENCE BV. 2003: 360–66
View details for Web of Science ID 000182179800066
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Structural changes on annealing of MBE grown (Ga, In) (N, As) as measured by X-ray absorption fine structure
12th International Conference on Molecular Beam Epitaxy (MBE-XII)
ELSEVIER SCIENCE BV. 2003: 408–11
View details for DOI 10.1016/S0022-0248(02)02194-2
View details for Web of Science ID 000182179800075
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Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBE
12th International Conference on Molecular Beam Epitaxy (MBE-XII)
ELSEVIER SCIENCE BV. 2003: 662–65
View details for Web of Science ID 000182179800123
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Heavy arsenic doping of silicon by molecular beam epitaxy
12th International Conference on Molecular Beam Epitaxy (MBE-XII)
ELSEVIER SCIENCE BV. 2003: 651–56
View details for Web of Science ID 000182179800121
- Improved dispersion relations for GaAs and applications to nonlinear optics J. Appl. Phys. 2003; 10 (94): 6447-55
- Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy Phys. Rev. Lett. 2003; 14 (90): 145505
- High throughput integration of optoeletronics devices for biochip fluorescent detection SPIE-Photonics West, 4982, Microfludics, BioMEMS, and Medical Microsystems 2003; 4982: 162-169
- 1.3~1.55 µm GaInNAsSb lasers Acta Optica Sinica 2003; suppl., no.1 (23): 313-14
- Standing-wave microspectrometer for multiple fluorescence detection 2003
- Novel, optically-controlled optical switch based on intimate integration of a surface-normal photodiode and waveguide electroabsorption modulator for wavelength conversion 2003
- Long wavelength GaInNAs(Sb) in-line fiber photodetector on GaAs 2003
- Integrated semiconductor fluorescence sensor for portable bio-medical diagnostics 2003
- Low-threshold CW GaInNAsSb/GaAs laser at 1.49 um Electron. Lett. 2003; 20 (39): 1445-6
- High intensity 1.3 – 1.6 mm luminescence and structural changes on anneal from MBE grown (Ga, In)(N, As, Sb) J. Crystal Growth 2003; 1-4 (251): 408-411
- Low Temperature Growth of GaAs on Si Substrates for Ultra-fast Photoconductive Switches 2003
- S. R. Bank, M.A. Wistey, H. B. Yuen, L.L. Goddard, J. S. Harris, “Low threshold, CW, room temperature 1.49 µm GaAs-based lasers, 2003
- A 100Gs/s Photoelectronic A/D converter 2003
- 1.5µm GaInNAs(Sb) lasers grown on GaAs by MBE J. Crystal Growth 2003; 1-4 (251): 367-371
- Laser Background Rejection Optimization in Integrated Optoelectronic Fluorescence Sensor 2003
- Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55 um J. Crystal Growth 2003; 251: 794-799
- Optically-switched dual-diode electroabsorption modulators Integrated Photonics Research, OSA Technical Digest, Optical Society of America, Washington, DC 2003: 12-14
- Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source Virtual J. Nanoscale Science & Techn. 2003; 1 (8)
- Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source Phys. Rev. Lett. 2003; 90: 256603
- Monolithic, GaInNAsSb VCSELs at 1.46 µm on GaAs by MBE Electron. Lett. 2003; 25 (39): 1822-3
- GaInNAsSb long wavelength lasers on GaAs 2003
- Standing-wave microsensor for adaptive analysis of spectral coherence 2003
- GaInNAsSb based long-wavelength lasers 2003
- Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS IEEE J. Lightwave Techn. 2003; 12 (21): 3104-15
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Twinning in TiSi2-island catalyzed Si nanowires grown by gas-source molecular-beam epitaxy
APPLIED PHYSICS LETTERS
2002; 81 (13): 2451-2453
View details for DOI 10.1063/1.1509096
View details for Web of Science ID 000178037600045
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Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates
10th International Conference on Modulated Semiconductor Structures
ELSEVIER SCIENCE BV. 2002: 995–98
View details for Web of Science ID 000176869100210
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GaInNAs material properties for long wavelength opto-electronic devices
Conference on Progress in Semiconductor Materials for Optoelectron Applications held at the 2001 MRS Fall Meeting
MATERIALS RESEARCH SOCIETY. 2002: 333–341
View details for Web of Science ID 000177250200046
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Ti-island-catalyzed Si nanowire growth by gas-source MBE: Morphology and twinning
Symposium on Functional Nanostructured Materials through Multiscale Assembly and Novel Patterning Techniques held at the 2002 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 2002: 235–240
View details for Web of Science ID 000179853500034
- A 1.5 µm GaInNAs(Sb) laser grown on GaAs by MBE 2002
- Measurement of nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second harmonic generation Opt. Lett. 2002; 27: 628-630
- Difference-frequency generation of 8µm radiation in orientation-patterned GaAs crystal Opt. Lett. 2002; 23 (27): 2091—2093
- Integrated semiconductor fluorescent detection system for biochip and biomedical applications 2002
- Standing-wave Fourier transform spectrometer based on integrated MEMS mirror and thin-film photodetector IEEE J. Select. Topics Quantum Elect. 2002; 1 (8): 98-105
- Electron traps in MBE Ga(A,N) layers grown by molecular beam epitaxy Appl. Phys. Lett. 2002; 12 (80): 2120-2122
- Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM IEEE Photon. Techn. Lett. 2002; 5 (15): 724-6
- GaInNAsSb for 1.3-1.6µm long wavelength lasers grown by molecular beam epitaxy IEEE J. Select Topics Quant. Electron 2002; 4 (8): 795-800
- Thermo-optic characterization of GaAs for quasi-phase-matched nonlinear-optical applications 2002
- Integrated semiconductor fluorescent detection system for biochip and biomedical applications 2002
- Examination of N incorporation into GaInNAs 2002
- Long-wavelength GaInNAs(Sb) lasers on GaAs IEEE J. Quant. Electron. 2002; 38: 1260 –1267
- Optomechanical Model of Surface Micromachined Tunable Optoelectonic Devices IEEE J. Select. Topics Quantum Elect. 2002; 1 (8): 80-87
- Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers Electron. Lett. 2002: 277-278
- Ultrafast sampling using low temperature grown GaAs MSM switches integrated with CMOS amplifier for photonic A/D conversion 2002
- Ti-Island-Catalyzed Si Nanowire Growth by Gas-Source MBE: Morphology and Twinning 2002
- Differential optical remoting of ultrafast charge packets using self-linearized modulation 2002
- Continuously tunable Mid-IR Frequency Generation in Orientation Patterned GaAs 2002
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High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide diode lasers
Conference on Novel In-Plane Semiconductor Lasers
SPIE-INT SOC OPTICAL ENGINEERING. 2002: 42–48
View details for Web of Science ID 000176914000006
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Integrated semiconductor fluorescent detection system for biochip and biomedical applications
Conference on Biomedical Nanotechnology Architectures and Applications
SPIE-INT SOC OPTICAL ENGINEERING. 2002: 289–297
View details for Web of Science ID 000177419500035
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High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide laser diode operating out to 1.4 mu m
28th International Symposium on Compound Semiconductors (ISCS 2001)
IOP PUBLISHING LTD. 2002: 165–69
View details for Web of Science ID 000179011200026
- Highly efficient SHG in all-epitaxial quasi-phase-matched GaAs 2002
- High Efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Diode Lasers 2002
- Long Wavelength GaInNAs(Sb) Lasers on GaAs 2002
- Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4µm IEEE Photon. Technol. Lett. 2002; 5 (14): 591-593
- GaInNAs long wavelength lasers: Progress and Challenges Semicond. Sci. Techn. 2002; 8 (17): 880-891
- Ga(A,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy Appl. Phys. Lett. 2002; 21 (81): 3987-3989
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GaInNAs: A new material in the quest for communications lasers
Symposia on Materials and Devices for Optoelectronics and Photonics/Photonic Crystals - From Materials to Devices held at the 2002 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 2002: 117–133
View details for Web of Science ID 000178623500016
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GaInNAs, a new material for long wavelength VCSELs
10th Seoul International Symposium on the Physics of Semiconductors and Applications
KOREAN PHYSICAL SOC. 2001: S306–S312
View details for Web of Science ID 000172968700073
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Decoherence in nearly isolated quantum dots
PHYSICAL REVIEW LETTERS
2001; 87 (20)
Abstract
Decoherence in nearly isolated GaAs quantum dots is investigated using the change in the average Coulomb blockade peak height when time-reversal symmetry is broken. The normalized change in the average peak height approaches the predicted universal value of 1/4 at temperatures well below the single-particle level spacing, T < Delta, but is greatly suppressed for T > Delta, suggesting that inelastic scattering or other dephasing mechanisms dominate in this regime.
View details for DOI 10.1103/PhysRevLett.87.206802
View details for Web of Science ID 000172182900043
View details for PubMedID 11690504
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All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion
APPLIED PHYSICS LETTERS
2001; 79 (7): 904-906
View details for Web of Science ID 000170277500004
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Spin degeneracy and conductance fluctuations in open quantum dots
PHYSICAL REVIEW LETTERS
2001; 86 (10): 2102-2105
Abstract
The dependence of conductance fluctuations on parallel magnetic field is used as a probe of spin degeneracy in open GaAs quantum dots. The variance of fluctuations at high parallel field is reduced from the low-field variance (with broken time-reversal symmetry) by factors ranging from roughly 2 in a 1 microm (2) dot to greater than 4 in 8 microm (2) dots. The factor of 2 is expected for Zeeman splitting of spin-degenerate channels. A possible explanation for the larger suppression based on field-dependent spin-orbit scattering is proposed.
View details for Web of Science ID 000167259900048
View details for PubMedID 11289865
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Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms
JOURNAL OF APPLIED PHYSICS
2001; 89 (2): 1008-1016
View details for Web of Science ID 000166144400029
- Use of angle resolved X-Ray Photoelectron Spectroscopy for determination of depth and thickness of the different layers in a layer structure J. Vac. Sci. Technol. 2001; 2 (19): 603-608
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1.3 micron opto-electronic devices on GaAs using group III-Nitride-Arsenides
Conference on Vertical-Cavity Surface-Emitting Lasers V
SPIE-INT SOC OPTICAL ENGINEERING. 2001: 22–33
View details for Web of Science ID 000169777400005
- High-speed, dual-function vertical cavity multiple quantum well modulators and photodetectors for optical interconnects Optical Engr. 2001; 7 (40): 1186-1191
- GaInNAs long wavelength vertical cavity lasers Technical Digest. CLEO/Pacific Rim 2001: 594-5
- Opto-mechanical model of surface micromachined tunable optoelectronic devices 2001
- Mid-infrared generation by difference frequency mixing in orientation-patterned GaAs 2001
- Nitrogen incorporation in Group III-Nitride Arsenide materials grown by elemental source MBE J. Crystal Growth 2001; 227: 506-515
- Incorporation of Nitrogen in Nitride-Arsenides: Origin of improved Luminescence Efficiency after Anneal J. Appl. Phys. 2001; 8 (89): 4401-4406
- Deep-level defects in MBE grown Ga(A,N) layers Physica B 2001; 308: 870-873
- High-speed sample and hold using low-temperature-grown GaAs MSM switches for photonic A/D conversion 2001
- Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion IEEE Photon. Technol. Lett. 2001; 7 (13): 717-719
- Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy J. Appl. Phys. 2001; 5 (90): 2405-2410
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Second harmonic generation in orientation-patterned AlGaAs waveguides pumped at 1.55 mu m
14th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society
IEEE. 2001: 376–377
View details for Web of Science ID 000175700800189
- Widely Tunable Micromachined Optical Filter with Adjustable Tuning Characteristics 2001
- Tunable mid-IR generation by difference-frequency mixing in orientation-patterned GaAs 2001
- GaInNAs material properties for long wavelength opto-electronic devices 2001
- Characterization of 0.5 mm Thick films of orientation-patterned GaAs for nonlinear optical applications 2001
- Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model J. Appl. Phys. 2001; 5 (90): 2358-2369
- Second harmonic generation in thick orientation-patterned GaAs 2001
- Long wavelength GaInNAs ridge waveguide lasers with GaNAs barriers 2001
- 1.3 micron opto-electronic devices on GaAs using group III-Nitride-Arsenides 2001
- Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy J. Appl. Phys. 2001; 11 (89): 6294-6301
- Decoherence in nearly isolated quantum dots Phys. Rev. Lett. 2001; 20 (87): 6802-6804
- Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model J. Crystal Growth 2001; 1-2 (222): 29-37
- Second harmonic generation in orientation-patterned AlGaAs waveguides pumped at 1.55 microns 2001
- Observation of Wavelength-Converting Optical Switching at 2.5 GHz in a Surface Normal Illuminated Waveguide 2001
- High efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Laser diode operating out to 1.4µm 2001
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Use of a dielectric stack as a one-dimensional photonic crystal for wavelength demultiplexing by beam shifting
OPTICS LETTERS
2000; 25 (20): 1502-1504
Abstract
We demonstrate the use of a 30-period dielectric stack structure as a highly dispersive device to spatially separate two beams with a 4-nm wavelength difference by more than their beam width. Unlike previous devices, our structure is simple to fabricate and relatively compact. We discuss possible applications of our device within wavelength-division multiplexing systems.
View details for PubMedID 18066259
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Narrow-band light emission in semiconductor-fibre asymmetric waveguide coupler
ELECTRONICS LETTERS
2000; 36 (16): 1378-1379
View details for Web of Science ID 000088762800031
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Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process
JOURNAL OF APPLIED PHYSICS
2000; 88 (2): 1136-1140
View details for Web of Science ID 000087889800083
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Wavelength-selective semiconductor in-line fibre photodetectors
ELECTRONICS LETTERS
2000; 36 (6): 515-516
View details for Web of Science ID 000086381000023
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In-line fiber evanescent field electrooptic modulators
1999 Novel Optical Materials and Application Workshop
WORLD SCIENTIFIC PUBL CO PTE LTD. 2000: 79–94
View details for Web of Science ID 000087877200007
- Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements J. Appl. Phys. 2000; 7 (88): 4153-4158
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Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics
IEEE 27th International Symposium on Compound Semiconductors
IEEE. 2000: 61–66
View details for Web of Science ID 000172146400011
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Incorporation of nitrogen in Group III-Nitrides-Arsenides grown by molecular beam epitaxy (MBE)
11th International Semiconducting and Insulating Materials Conference (SIMC-XI)
IEEE. 2000: 260–263
View details for Web of Science ID 000171690800053
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MBE growth of group III-nitrides-arsenides for long wavelength opto-electronic devices on GaAs substrates
2nd International Symposium on Compound Semiconductor Power Transistors/32nd International Symposium on State-of-the-Art Program on Compound Semiconductors
ELECTROCHEMICAL SOCIETY INC. 2000: 195–204
View details for Web of Science ID 000088423100021
- All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion 2000
- Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern Appl. Phys. Lett. 2000; 22 (76): 3185-3187
- Thick (200 mu m) orientation-patterned GaAs for bulk quasi-phase-matched nonlinear frequency conversion Tech. Digest CLEO, TOPS, San Francisco, CA 2000; 39
- In-line fiber evanescent field electrooptic modulators J. Nonlinear Optical Phys. Materials 2000; 1 (9): 79-94
- Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process Jpn. J. Appl. Phys. 2000; 4B (39): 2334-2337
- Analysis of unstable two-phase region in wurtzite Group III nitride ternary alloy using modified valence force field model Jpn. J. Appl. Phys. 2000; 9A (39): 5057-5062
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Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period
Conference on Nonlinear Optics: Materials, Fundamentals, and Applications, Technical Digest
OPTICAL SOC AMERICA. 2000: 168–170
View details for Web of Science ID 000165407100053
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Narrow-band light emission in a semiconductor-fiber asymmetric waveguide coupler
IEEE 27th International Symposium on Compound Semiconductors
IEEE. 2000: 419–423
View details for Web of Science ID 000172146400071
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A multiple-quantum-well GaAs/AlGaAs in-line fiber intensity modulator
Conference on Integrated Optics Devices IV (IOD-IV)
SPIE-INT SOC OPTICAL ENGINEERING. 2000: 50–57
View details for Web of Science ID 000086714000006
- 1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions Electron. Lett. 2000; 11 (36): 951-952
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MBE growth of nitride-arsenide materials for long wavelength opto-electronics
Symposium on GaN and Related Alloys Held at the MRS Fall Meeting
MATERIALS RESEARCH SOC. 2000: U407–U412
View details for Web of Science ID 000090103600067
- Quasi-phasematched frequency conversion in thick all-epitaxial, orientation-patterned GaAs films 2000
- Modeling of MEMS tunable optoelectronic device mirror 2000
- Wavelength demultiplexing by beam shifting using a dielectric stack as a one-dimensional photonic crystal 2000
- Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics 2000
- Compositional Evolution and Structural Changes during Anneal of Group III-Nitride-arsenide Alloys 2000
- Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model J. Appl. Phys. 2000; 2 (88): 1104-1110
- Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers IEEE Photon. Techn.Lett. 2000; 12 (12): 1598-1600
- Vertical Cavity Modulator for Optical Interconnection and its High Speed Performance 2000
- A multiple-quantum-well GaAs/AlGaAs in-line fiber intensity modulator 2000
- Tunable long wavelength vertical cavity lasers: the engine of next generation optical networks IEEE/LEOS Special Millenium Issue, IEEE J. Sel. Top. Quan. Elect. 2000; 6: 1145-1160
- Room-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat alpha-alumina substrate Appl. Phys. Lett. 2000; 2 (76): 239-241
- Low threshold current continuous-wave GaInNAs/GaAs VCSELs 2000
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Epitaxial orientation-patterning of AlGaAs films for nonlinear optical devices
IEEE 27th International Symposium on Compound Semiconductors
IEEE. 2000: 229–232
View details for Web of Science ID 000172146400039
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All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion
13th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society
IEEE. 2000: 312–313
View details for Web of Science ID 000165806400159
- Narrow-band light emission in a semiconductor-fiber asymmetric waveguide coupler 2000
- Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE) 2000
- Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period 2000
- Pulsed 25-108 degrees C operation of GaInNAs multiple quantum well vertical cavity lasers Tech. Digest CLEO , TOPS, San Francisco, CA 2000; 39: 229-230
- Optical gain and collector current characteristics of resonant-cavity phototransistors Appl. Phys. Lett. 2000; 9 (76): 1188-1190
- Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy J. Vac. Sci. Technol. B 2000; 3 (18): 1480-1483
- Frequency locking of micromachined tunable VCSELs to external wavelength selective filters Digest LEOS Summer Topical Meeting Optical Sensing in Semiconductor Manufacturing, Aventura, FL 2000
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Low-temperature saturation of the dephasing time and effects of microwave radiation on open quantum dots
PHYSICAL REVIEW LETTERS
1999; 83 (24): 5090-5093
View details for Web of Science ID 000084152000046
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Strain directed assembly of nanoparticle arrays within a semiconductor
JOURNAL OF NANOPARTICLE RESEARCH
1999; 1 (3): 329-347
View details for Web of Science ID 000208066900003
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Size stabilization of arsenic precipitates in nonstoichiometric GaAs-based compounds
APPLIED PHYSICS LETTERS
1999; 75 (7): 917-919
View details for Web of Science ID 000081928700012
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Coulomb blockade fluctuations in strongly coupled quantum dots
PHYSICAL REVIEW LETTERS
1999; 83 (7): 1403-1406
View details for Web of Science ID 000082066600033
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High-speed, optically controlled surface-normal optical switch based on diffusive conduction
APPLIED PHYSICS LETTERS
1999; 75 (5): 597-599
View details for Web of Science ID 000081644100001
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GaAs AlGaAs multiple-quantum-well in-line fiber intensity modulator
APPLIED PHYSICS LETTERS
1999; 75 (3): 310-312
View details for Web of Science ID 000081409000002
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Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition
JOURNAL OF CRYSTAL GROWTH
1999; 200 (3-4): 362-367
View details for Web of Science ID 000079859800004
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An AlGaAs/GaAs tunnel diode integrated with nanometer-scale atomic force microscope tip-induced oxides
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
1999; 38 (2B): L160-L162
View details for Web of Science ID 000079486800004
- Group III-nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy 1999
- Realization of logically labeled effective pure states for bulk quantum computation Phys. Rev. Lett. 1999; 83: 3085
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A GaAs/AlGaAs narrow bandwidth in-line fiber filter
18th Congress of the International Commission for Optics - Optics for the Next Millennium
SPIE-INT SOC OPTICAL ENGINEERING. 1999: 94–95
View details for Web of Science ID 000082790200042
- Excess noise in sub-micron silicon FET: characterization, prediction and control 1999
- Scanned potential microscopy of edge and bulk currents in the quantum Hall regime Phys. Rev B 1999; 7 (59): 4654-4657
- Vertical cavity modulator for optical interconnection and its high speed performance 1999
- GaAs/AlGaAs narrow-bandwidth in-line fiber filter 1999
- Demonstration of second harmonic generation in all-epitaxially grown orientation-patterned AlGaAs waveguides 1999
- GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique Internl. Symp. Compound Semiconductors Institute of Physics Publishing. 1999: 337–340
- Micromachined tunable optoelectronic devices for spectroscopic applications 1999
- GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique 1999
- Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlattice J. Cryst. Growth 1999; 202: 1190-1193
- Metal-based room-temperature operating single electron devices using scanning probe oxidation J. J. Appl. Phys. 1999; 1B (38): 477-479
- MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy J. Crystal Growth 1999; 202: 187-193
- Room temperature single electron transistor by AFM nano-oxidation process-coincidence in experimental and theoretical results 1999
- Optically-controlled optical gate using a double diode structure 1999
- MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics 1999
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Mesoscopic Coulomb blockade in one-channel quantum dots
PHYSICAL REVIEW LETTERS
1998; 81 (26): 5904-5907
View details for Web of Science ID 000077760200049
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Changing the electronic spectrum of a quantum dot by adding electrons
PHYSICAL REVIEW LETTERS
1998; 81 (26): 5900-5903
View details for Web of Science ID 000077760200048
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Distributions of the conductance and its parametric derivatives in quantum dots
PHYSICAL REVIEW LETTERS
1998; 81 (9): 1917-1920
View details for Web of Science ID 000075626300042
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Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers
APPLIED PHYSICS LETTERS
1998; 73 (3): 330-332
View details for Web of Science ID 000075275600018
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Statistics of peak spacings and widths in the quantum coulomb blockade regime
12th International Conference on Electronic Properties of 2-Dimensional Systems
ELSEVIER SCIENCE BV. 1998: 201–205
View details for Web of Science ID 000074919400044
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Statistics of Coulomb blockade peak spacings
PHYSICAL REVIEW LETTERS
1998; 80 (20): 4522-4525
View details for Web of Science ID 000073632900041
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Cavity-locked ring-down spectroscopy
JOURNAL OF APPLIED PHYSICS
1998; 83 (8): 3991-3997
View details for Web of Science ID 000073273900006
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Iron nitride mask and reactive ion etching of GaN films
39th Electronic Materials Conference (EMC)
SPRINGER. 1998: 185–89
View details for Web of Science ID 000073248600007
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Nanoscale oxidation of GaAs-based semiconductors using atomic force microscope
JOURNAL OF APPLIED PHYSICS
1998; 83 (4): 1844-1847
View details for Web of Science ID 000075257300004
- Micromachined Widely Tunable Vertical Cavity Laser Diodes J. of Microelectromechanical Systems 1998; 1 (7): 48-55
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Calculation of unstable mixing region in wurtzite InGaN
Symposium on Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature
MATERIALS RESEARCH SOCIETY. 1998: 291–296
View details for Web of Science ID 000077032000047
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Time dependence of arsenic precipitates' size distribution in low temperature GaAs
Materials-Research-Society Symposium on Diffusion Mechanisms in Crystalline Materials at the MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 1998: 407–412
View details for Web of Science ID 000075974200050
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Growth and effects of single-crystalline ZnO buffer layer on GaN epitaxy
24th IEEE International Symposium on Compound Semiconductors
IEEE. 1998: 11–14
View details for Web of Science ID 000075543900003
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Arsenic precipitation in GaAs for single-electron tunneling applications
24th IEEE International Symposium on Compound Semiconductors
IOP PUBLISHING LTD. 1998: 135–138
View details for Web of Science ID 000074779700031
- Near-Infrared Cavity Ringdown Spectroscopy of Water Vapor in an Atmospheric Flame Chem. Phys. Lett. 1998; 5-6 (284): 387-395
- AlGaAs/GaAs Tunneling Diode Integrated with nanometre-scale Oxides Patterned by Atomic Force Microscope Electron. Lett. 1998; 34: 12, 1262-1263
- Advances in CW cavity ring-down spectroscopy Technical Digest International Quantum Electronics Conference 1998: 79
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Increased surface ordering of InAs island arrays using a multi-dot column subsurface structure
24th IEEE International Symposium on Compound Semiconductors
IEEE. 1998: 535–538
View details for Web of Science ID 000075543900127
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Micromachined tunable vertical cavity lasers as wavelength selective tunable photodetectors
24th IEEE International Symposium on Compound Semiconductors
IEEE. 1998: 561–564
View details for Web of Science ID 000075543900133
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Two-dimensional device simulation for PHEMT material and process control
24th IEEE International Symposium on Compound Semiconductors
IEEE. 1998: 647–650
View details for Web of Science ID 000075543900154
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Arsenic precipitation in GaAs for single-electron tunneling applications
24th IEEE International Symposium on Compound Semiconductors
IEEE. 1998: 135–138
View details for Web of Science ID 000075543900031
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Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs
24th IEEE International Symposium on Compound Semiconductors
I E E E. 1998: 329–332
View details for Web of Science ID 000075543900078
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Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs
24th IEEE International Symposium on Compound Semiconductors
IOP PUBLISHING LTD. 1998: 329–332
View details for Web of Science ID 000074779700078
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High-speed quantum well optoelectronic gate based on diffusive conduction recovery
Optics in Computing 98 Meeting
SPIE - INT SOC OPTICAL ENGINEERING. 1998: 10–13
View details for Web of Science ID 000074523000003
- MBE growth of laterally antiphase-patterned GaAs films using thin Ge layers for waveguide mixing 1998
- In-line fiber-optic filter using GaAs ARROW waveguide 1998
- Vapor Phase Epitaxy Growth of GaN on Pulsed Laser Deposited ZnO Buffer Layer J. Crys. Growth 1998; 3-4 (187): 340-346
- Scanned potential microscopy of a two-dimensional electron gas Physica B 1998; 251: 79-83
- Room Temperature Coulomb Oscillation and Memory Effect for Single Electron Memory made by Pulse-Mode AFM Nano-oxidation Process IEDM, San Francisco. 1998
- Micromachined Tunable Vertical-Cavity Lasers as Wavelength-Selective Tunable Photodetectors 1998
- Calculation of Unstable Mixing Region in Wurtzite InGaN 1998
- Simultaneous Optimization of Membrane Reflectance and Tuning Voltage for Tunable Vertical Cavity Lasers Appl. Phys. Lett. 1998; 1 (72): 10-12
- Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy Chem Phys. Lett. 1998; 290 (4-6): 335-340
- Growth of epitaxial AlxGa1-xN films by pulsed laser deposition App. Phys. Lett. 1998; 10 (72): 1158-1160
- Increased surface ordering of InAs island arrays using a multidot column subsurface structure 1998
- High-speed quantum well optoelectronic gate based on diffusive conduction recovery 1998
- Vertical InAs diffusion and surface ordering processes in InAs vertical quantum dot columns Physica E 1998; 1-4 (2): 709-713
- Two-dimensional Device Simulation for PHEMT Material and Process Control 1998
- Iron Nitride Mask and Reactive Ion Etcjomg pf GaN Films J. Elec. Matls 1998; #4 (27): 185-189
- Basic Mechanisms of an Atomic Force Microscope Tip-induced Nano-oxidation Process of GaAs J. Appl. Phys. 1998; 83: 12, 7998-8001
- Micromachined tunable vertical cavity lasers as wavelength selective tunable photodetectors 1998
- Low Noise Silicon RF FET Design Using Graded Doping and Stress 1998
- Statistics of peak spacings and widths in the quantum coulomb blockade regime Physica B 1998; 251: 201-205
- Bulk Spin Quantum Computation toward Large-scale Quantum Computation Dig. Tech. Papers, IEEE ISSCC 1998: 96-97
- Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor Technical Digest, IEEE IEDM, San Francisco, CA 1998: 665
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Atomic force microscope nanoscale lithography for single-electron device applications
24th IEEE International Symposium on Compound Semiconductors
IOP PUBLISHING LTD. 1998: 577–580
View details for Web of Science ID 000074779700137
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Correlations between ground and excited state spectra of a quantum Dot
Science (New York, N.Y.)
1997; 278 (5344): 1784-8
Abstract
The ground and excited state spectra of a semiconductor quantum dot with successive electron occupancy were studied with linear and nonlinear magnetoconductance measurements. A direct correlation was observed between the mth excited state of the N-electron system and the ground state of the (N + m)-electron system for m up to 4. The results are consistent with a single-particle picture in which a fixed spectrum of energy levels is successively filled, except for a notable absence of spin degeneracy. Further departures from the single-particle picture due to electron-electron interaction were also observed. Magnetoconductance fluctuations of ground states show anticrossings where wave function characteristics are exchanged between adjacent levels.
View details for PubMedID 9388178
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Laser diode cavity ring-down spectroscopy using acousto-optic modulator stabilization
JOURNAL OF APPLIED PHYSICS
1997; 82 (7): 3199-3204
View details for Web of Science ID A1997XY05700005
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Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs
ELECTRONICS LETTERS
1997; 33 (12): 1087-1089
View details for Web of Science ID 000072040800062
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Growth of abrupt GaAs/Ge heterointerfaces by atomic hydrogen-assisted molecular beam epitaxy
9th International Conference on Molecular Beam Epitaxy (MBE-IX)
ELSEVIER SCIENCE BV. 1997: 1039–1044
View details for Web of Science ID A1997XX17900064
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Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs
ELECTRONICS LETTERS
1997; 33 (9): 818-820
View details for Web of Science ID A1997WX45900063
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Zero chirp asymmetric fabry-perot electroabsorption modulator using coupled quantum wells
IEEE PHOTONICS TECHNOLOGY LETTERS
1997; 9 (3): 330-332
View details for Web of Science ID A1997WJ31800021
- Analysis of Device Parameters for Pnp-Type AlGaAs/GaAs HBTs Including High-Injection Using New Direct Parameter Extraction IEEE Trans. Electron Devices 1997; 1 (44): 1-10
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Monolithically micromachined wavelength: Tunable vertical cavity lasers
27th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII), at the 192nd Meeting of the Electrochemical-Society
ELECTROCHEMICAL SOCIETY INC. 1997: 118–24
View details for Web of Science ID A1997BJ30W00012
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25nm Wavelength range tunable vertical cavity lasers
55th Annual Device Research Conference
IEEE. 1997: 108–109
View details for Web of Science ID A1997BJ45G00039
- Whispering Gallery Mode Operation in Tunable Vertical Cavity Laser Structure Electron. Lett. 1997; 4 (33): 1467-8
- Increased size uniformity through vertical quantum dot columns J. Crystal Growth 1997; pt.2 (175): 707-712
- Fabrication of Single Electron Memory on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process International Electron Devices Meeting, Washington, DC 1997: 155-157
- Atom-resolved Scanning Tunneling Microscopy of Vertically Ordered InAs Quantum Dots Appl. Phys. Lett. 1997; 71: 1083-1085
- Low Noise FET Design for Wireless Communications 1997
- Experiments on the Statistics of Coulomb Blockade Peak Spacing: Beyond Random Matrix Theory 1997
- Arsenic Precipitation in GaAs for Single-Electron Tunneling Applications 1997
- Intersubband Absorption Saturation Study of Narrow III-V Multiple Quantum Wells in the l = 2.8-9 µm Spectral Range Semicond. Sci. Technol. 1997; 12: 708-714
- Laser parameter extraction for tunable vertical cavity lasers Elect. Lett. 1997; 20 (33): 1705-1707
- Growth of Thick GaN Films on RF Sputtered AIN Buffer Layer by Hydride Vapor Phase Epitaxy J. Electronic Materials 1997; 8 (26): 898-902
- Increased Ordering in Vertically Coupled InAs Quantum Dot Arrays 1997
- Electromechanical Tuning of Lasing Wavelength of Vertical Cavity Lasers 1997
- Cavity ring-down spectroscopy with Fourier-transform-limited light pulses Chem. Phys. Lett. 1997; 1-2 (258): 63-70
- Localized Intermixing of AlAs and GaAs Layers for Lithographic Control of the Lateral Oxidation of AlAs 1997
- Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy Chem. Phys Lett. 1997
- Single Electron Transistor on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process 1997
- Growth and Defects of Single Crystalline ZnO Buffer Layer on GaN 1997
- 30nm Wavelength Tunable Vertical Cavity Lasers 1997
- Scanned Potential Microscopy of a Two-dimensional electron gas 1997
- Increased Surface Ordering of InAs Island Arrays Using a Multi-Dot Column Subsurface Structure 1997
- Correlations between Ground and Excited State Spectra of a Quantum Dot 1997
- Low Threshold Continuously Tunable Vertical Cavity Surface Emitting Lasers with 19.1 nm Wavelength Range Appl. Phys. Lett. 1997; 70: 547-549
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Switching and hysteresis in quantum dot arrays
Engineering Foundation Conference on Ordered Molecular and Nanoscale Electronics
IOP PUBLISHING LTD. 1996: 372–75
View details for Web of Science ID A1996WN78100011
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Structural and photoluminescence properties of growth-induced InAs island columns in GaAs
15th North American Conference on Molecular Beam Epitaxy
A V S AMER INST PHYSICS. 1996: 2208–11
View details for Web of Science ID A1996UU48000122
- Broad-Range Continuous Wavelength Tuning in Microelectromechanical Vertical-Cavity Surface-Emitting Lasers Digest IEEE/LEOS 1996 Summer Topical Meetings 1996
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Micromachined tunable Fabry-Perot filters for wavelength division multiplexing
Conference on Wavelength Division Multiplexing Components
SPIE - INT SOC OPTICAL ENGINEERING. 1996: 172–183
View details for Web of Science ID A1996BF60T00018
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Growth of GaAs and InAlAs on high quality, epitaxial, NiAl, metal film
Symposium on Evolution of Epitaxial Structure and Morphology
MATERIALS RESEARCH SOCIETY. 1996: 537–542
View details for Web of Science ID A1996BF87P00077
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Homoepitaxial and heteroepitaxial growth of Sr0.61Ba0.39Nb2O6 thin films by pulsed laser deposition
Symposium on Epitaxial Oxide Thin Films II, at the 1995 MRS Fall Meeting
MATERIALS RESEARCH SOC. 1996: 225–230
View details for Web of Science ID A1996BF25N00030
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Growth of epitaxial GaN films using ZnO buffer layer by pulsed laser deposition
Symposium on Compound Semiconductor Electronics and Photonics
MATERIALS RESEARCH SOC. 1996: 389–394
View details for Web of Science ID A1996BG51U00054
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Intersubband transitions to the above-barrier states controlled by electron Bragg mirrors
22nd International Symposium on Compound Semiconductors - Technologies for Future Electronics and Optoelectronics Industries (ISCS-22)
IOP PUBLISHING LTD. 1996: 1187–1192
View details for Web of Science ID A1996BF51P00218
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Microelectromechanical wavelength-tunable vertical cavity laser
54th Annual Device Research Conference
IEEE. 1996: 90–91
View details for Web of Science ID A1996BG23Q00035
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Micromachined tunable vertical-cavity surface-emitting lasers
1996 International Electron Devices Meeting
IEEE. 1996: 405–408
View details for Web of Science ID A1996BG98F00089
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Atomic force microscope chemically induced direct processing
Symposium on Compound Semiconductor Electronics and Photonics
MATERIALS RESEARCH SOC. 1996: 299–301
View details for Web of Science ID A1996BG51U00040
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GaAs-on-Ge heteroepitaxy by atomic hydrogen-assisted molecular beam epitaxy (H-MBE)
Symposium on Evolution of Epitaxial Structure and Morphology
MATERIALS RESEARCH SOCIETY. 1996: 203–206
View details for Web of Science ID A1996BF87P00031
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Broad-range continuous wavelength tuning in microelectromechanical vertical-cavity surface-emitting lasers
IEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing
IEEE. 1996: C31–C32
View details for Web of Science ID A1996BG16J00127
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Collector-up AlGaAs/GaAs HBTs using oxidized AlAs
54th Annual Device Research Conference
IEEE. 1996: 36–37
View details for Web of Science ID A1996BG23Q00014
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Vertical cavity X-modulators for reconfigurable optical interconnection and routing
3rd International Conference on Massively Parallel Processing Using Optical Interconnections (MPPOI 96)
IEEE COMPUTER SOC. 1996: 352–359
View details for Web of Science ID A1996BG68E00044
- Intrinsic Bistability in Nonlinear Transport Through a Submicron Lateral Barrier Surface Science 1996; 1-3 (362): 652-655
- Electroluminescence in vertically aligned quantum dot multilayer light-emitting diodes fabricating by growth-induced islanding Appl. Phys. Lett. 1996; 13 (69): 1897-1899
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Optical properties and morphology of GaN grown by MBE on sapphire substrates
Symposium on III-Nitride, SiC and Diamond Materials for Electronic Devices
MATERIALS RESEARCH SOC. 1996: 681–686
View details for Web of Science ID A1996BG72B00105
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Vapor phase epitaxy of GaN using gallium tri-chloride and ammonia
Symposium on Compound Semiconductor Electronics and Photonics
MATERIALS RESEARCH SOC. 1996: 195–200
View details for Web of Science ID A1996BG51U00025
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Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl3/N-2 and NH3/N-2
Symposium on III-Nitride, SiC and Diamond Materials for Electronic Devices
MATERIALS RESEARCH SOC. 1996: 233–238
View details for Web of Science ID A1996BG72B00036
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Photoluminescence study of chloride VPE-grown GaN
Symposium on Compound Semiconductor Electronics and Photonics
MATERIALS RESEARCH SOC. 1996: 189–194
View details for Web of Science ID A1996BG51U00024
- Vertical-cavity X-modulators for WDM 1996
- Thermodynamic Analysis and Growth Characterization of thick GaN films grown by Chloride VPE using GaCl3/N2 and NH3/N2 1996
- Photoluminescence Study of Chloride VPE-Grown GaN 1996
- Growth of Epitaxial GaN Films Using ZnO Buffer Layer by Pulsed Laser Deposition 1996
- Chloride VPE Growth of GaN on Pulsed Laser Deposited ZnO buffer Layer 1996
- Design of Quantum Well Intersubband Transitions for Non-linear Difference Frequency Mixing Technical Digest IEEE/LEOS: Nonlinear Optical Meeting 1996
- Deep Level Defects in GaAs on Si Substrates Grown by Atomic Hydrogen Assisted Molecular Beam Epitaxy J. Appl. Phys. 1996; 8 (80): 4770-4772
- Control of Quasi-Bound States by Electron Bragg Mirrors in GaAs/Al0.3Ga0.7As Quantum Wells Appl. Phys. Lett. 1996; 19 (68): 2720 - 2722
- The Mechanical Properties of NiAl Grown on GaAs by Molecular Beam Epitaxy 1996
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature made by STM/AFM Nano-Oxidation Process 1996
- Micromachined tunable Fabry-Perot filters for wavelength division multiplexing 1996
- Growth of GaAs and InAlAs on High Quality, Epitaxial, NiAl Metal Film 1996
- Application of Micro-Electro-Mechanical Systems to Optoelectronics 1996
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Vertical cavity X-modulators for WDM
Conference on Wavelength Division Multiplexing Components
SPIE - INT SOC OPTICAL ENGINEERING. 1996: 207–216
View details for Web of Science ID A1996BF60T00022
- Control of Quasi-Bound States by Electron Bragg Mirrors and electron Lifetime Measurements in GaAs/AlGaAs Quantum Wells 1996
- Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs Phys. Rev. Lett. 1996; 6 (76): 952 - 955
- Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process for TiOx/Ti System Appl. Phys. Lett. 1996; 1 (68): 34-36
- Creation and Optimization of Vertical Cavity X-Modulators IEEE J. Quant. Elect. 1996; 1 (32): 53-60
- Basic Analysis of Atomic-scale Growth Mechanisms for Molecular Beam Epitaxy of GaAs using atomic Hydrogen as a surfactant J. Vac.Sci. Technol. B 1996; 3 (14): 1725 - 1728
- Vertical Cavity X-Modulators for Reconfigurable Optical Interconnection and Routing 1996
- Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia 1996
- Size Dependence of Room Tempeature Operated Side Gate Single Electron Transistor with Multi-Islands Structure made by STM/AFM Nano-Oxidation Process 1996
- GaN Film Growth by a Supersonic Arcjet Plasma 1996
- Broad-Range Continuous Wavelength Tuning in Microelectronmechanical Vertical Cavity Surface Emitting Lasers 1996
- Atomic Force Microscope Chemically Induced Direct Processing 1996
- Two-State Electrically Controllable Phase Diffraction Grating Using Arrays of Vertical-Cavity Phase Flip Modulators IEEE Photon. Techno. Lett. 1996; 9 (8): 1211-1213
- Strain Relaxation in Compositionally Graded Epitaxial Layers J. Vac. Sci. Techno. B 1996; 2 (14): 642-646
- Optical Properties and Morphology of GaN Grown by MBE on Sapphire Substrates 1996
- Switching and Hysteresis in Quantum Dot Arrays J. of Nanotechnology 1996; 4 (7): 372 - 375
- Raman Scattering Study of GaN Films J. Appl. Phys. 1996; 7 (80): 4058-4062
- Observation of Super-Structure in High-Quality Pseudomorpic Film of NiAl grown on GaAs J. of Crystal Growth 1996; 2 (169): 201-208
- Continuously-tunable micromachined vertical-cavity surface-emitting laser with 18 nm range Electr. Lett. 1996; 4 (32): 330-332
- Fabrication of Novel Quantum Devices - Toward Room Temperature Operation of Single Electron Devices 1996
- Wide and Continuous Wavelength Tuning in a Vertical Cavity Surface Emitting Laser Using a Micromachined Deformable Membrane Mirror Appl. Phys. Lett. 1996; 7 (68): 891-893
- Vapor Phase Epitaxy of GaN using GaCl3/N2 and NH3/N2 J. Crystal Growth 1996: 689– 696
- Saturation Study of III-V Multi Quantum Well Bound-to-Bound and Bound-to-Quasibound Intersubband Transitions in the 3 - 10 µm Spectral Range Semicond. Sci. Techno. 1996
- Reactive Ion Etching of Gallium Nitride Films J. Electric Materials 1996; 5 (25): 835-837
- Single electron devices with various structures made by STM/AFM nano-oxidation process 1996
- Micromachined Tunable Vertical-Cavity Surface-Emitting Lasers Technical Digest 1996 IEEE IEDM 1996
- Collector-up AlGaAs/GaAs heterojunction bipolar transistors using oxidized AlAs for current confinement Electr. Lett. 1996; 4 (32): 399-401
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EPITAXIAL-GROWTH OF THICK PSEUDOMORPHIC NIAL METAL-FILMS ON GAAS BY MIGRATION-ENHANCED EPITAXY
8th International Conference on Molecular Beam Epitaxy
ELSEVIER SCIENCE BV. 1995: 1150–53
View details for Web of Science ID A1995RD43300089
- Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs Appl. Phys. Lett. 1995; 23 (66): 3161-3163
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Epitaxial multilayers of (Sr,Ba)Nb2O6 and conducting films on (001) MgO substrates
Symposium on Film Synthesis and Growth Using Energetic Beams
MATERIALS RESEARCH SOCIETY. 1995: 79–84
View details for Web of Science ID A1995BE29R00012
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Pulsed laser deposition of epitaxial Sr0.61Ba0.39Nb2O6 thin films for waveguide applications
Symposium on Ferroelectric Thin Films IV, at the 1994 MRS Fall Meeting
MATERIALS RESEARCH SOC. 1995: 173–178
View details for Web of Science ID A1995BD57U00024
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Coupled quantum wells for optical modulation
NATO Advanced Study Institute on Confined Electrons and Photons - New Physics and Applications
PLENUM PRESS DIV PLENUM PUBLISHING CORP. 1995: 759–764
View details for Web of Science ID A1995BD35B00030
- Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process 1995
- MBE Growth of High-Quality GaAs and AlGaAs Molecular Beam Epitaxy: Applications to Key Materials edited by Farrow, R., F. C. Noyes, Park Ridge. 1995: 114–274
- Growth Induced and Patterned 0-Dimensional Quantum Structures in Low Dimensional Structures Prepared by Epitaxial Growth of Regrowth on Patterned Substrate edited by Eberl et al, K. 1995: 313–324
- Continuously Tunable Micro-Electromechanical Vertical-cavity Surface-emitting Lasers Internl J. Optoelectronics 1995; 5 (10): 401 – 408
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CHARACTERIZATION OF IN-SITU VARIABLE-ENERGY FOCUSED ION BEAM/MBE MQW STRUCTURES
21st International Symposium on Compound Semiconductors
IOP PUBLISHING LTD. 1995: 359–62
View details for Web of Science ID A1995BC92S00066
- Broadly -Tunable Resonant-Cavity Light-emitting Diode IEEE Photonics Technology Lett. 1995; 11 (7): 1267 - 1269
- Periodic Mode Shift in Vertical Cavities Grown by Molecular Beam Epitaxy 1995
- Comparison of Experimental and Theoretical Results of Room Temperature Operated Single Electron Transistor made by STM/AFM Nano - Oxidation Process 1995
- Tunable Mid-Infrared Generation by Difference Frequency Mixing of Diode Laser Wavelengths in Intersubband InGaAs / AlAs Quantum Wells 1995
- Observation of 1.5µm Quantum Confined Stark Effect in InGaAs/AlGaAs Multiple Quantum Wells on GaAs Substrates J. of Vac. Sci. Tech. 1995; 4 (B 13): 1526 - 1528
- Threshold, Switching, and Hysteresis in Quantum Dot Arrays Phys. Rev. Lett. 1995; 16 (74): 3237-3240
- Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxy J. Crystal Growth 1995; 150: 1150 – 1153
- A Wet Etching Technique for Accurate Etching of GaAs/AlAs Distributed Bragg Reflectors J. Electrochem. Soc. 1995; 7 (142): 2386 – 2388
- Wavelength Shift in Vertical Cavity Laser Arrays on a Patterned Substrate 1995
- Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs 1995
- MBE growth of gan with ECR plasma and hydrogen azide 1995
- Heteroepitaxial growth of GaN on GaAs by ECR plasma-assisted MBE 1995
- Effect of substrate miscut on the structural-properties of ingaas linear graded buffer layers grown by molecular-beam epitaxy on GaAs 1995
- Coupled Quantum Wells for Optical Modulation Confined Electron and Photon Systems edited by Burnstenin, E., Weisbuck, C. Plenum Press. 1995: 759–764
- Vertical Coupled-Cavity Microinterferometer on GaAs with deformable-membrane top mirror IEEE Photonics Technology Lett. 1995; 4 (7): 382 - 384
- Temperature Dependence of Phase Breaking in Ballistic Quantum Dots Phys. Rev. B 1995; 4 (52): 2656-2659
- Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas Appl. Phys. Lett. 1995; 12 (67): 1754 – 1756
- Multiple Wavelength Vertical Cavity Laser Arrays on Patterned Substrates IEEE J. of Select Topics in Quantum Electronics 1995; 1: 624 - 628
- Interface Smoothing of High Indium Content InGaAs Layers on GaAs J. Electrochem. Soc. 1995; 5 (142): 1667-1670
- Intersubband Transitions to the Above-Barrier States Controlled by Electron Bragg Mirrors 1995
- Coupled Quantum Wells for Optical Modulation 1995
- Fabrication of GaAs Orientation Template Substrates for Quasi-Phasematched Guided-Wave Nonlinear Optics Nonlinear Guided Waves and Their Applications, OSA Technical Digest Series Optical Society of America, Washington DC 1995: 156-158
- Broadly Tunable Resonant-cavity Light Emission Appl. Phys. Lett. 1995; 5 (67): 590 - 592
- 2-dimensional analysis of self-sustained pulsation for narrow-stripe AlGaAs lasers IEEE J. Selected Topics Quantum Electronics 1995; 2 (1): 473-479
- Growth Induced and Patterned 0-Dimensional Quantum Structures 1995
- GaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxy 1995
- MBE Growth of High Tc Superconductors Molecular Beam Epitaxy: Applications to Key Materials edited by Farrow, R., F. C. Noyes, Park Ridge. 1995: 505–622
- Periodically Induced Mode Shift in Vertical Cavity Fabry Perot Etalons Grown by Molecular Beam Epitaxy Photon. Techn. Lett. 1995; 3 (7): 235-237
- Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide J. Crystal Growth 1995; 150: 912 – 915
- Modeling of Turn-on Jitter in Vertical Cavity Surface Emitting Lasers Elec. Lett. 1995
- Growth and Characterization of Epitaxial Strontium Barium Niobate Thin Films Prepared by Pulsed Laser Deposition J. of Electronic Materials 1995
- 50 nm GaAs/AlAs wire structures grown on corrugated GaAs J. Vac. Sci. Technol. 1994; 2 (B12): 1286 - 1289
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ALUMINUM GRADED-BASE ALGAAS/GAAS PNP HBT WITH 37 GHZ CUT-OFF FREQUENCY
1994 IEEE International Electron Devices Meeting
IEEE. 1994: 183–186
View details for Web of Science ID A1994BC55U00041
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MULTI-LONGITUDINAL-MODE 2-DIMENSIONAL ANALYSIS OF SELF-SUSTAINED PULSATING LASER DIODES
14th IEEE International Semiconductor Laser Conference
IEEE. 1994: 113–114
View details for Web of Science ID A1994BB80W00054
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FREE-ELECTRON LASER NONLINEAR SPECTROSCOPY OF DOUBLY RESONANT (5.5-3.0 MU-M AND 4.1-2.1 MU-M) INGAAS/ALGAAS ASYMMETRIC QUANTUM-WELLS
Conference on Quantum Well and Superlattice Physics V
SPIE - INT SOC OPTICAL ENGINEERING. 1994: 331–3141
View details for Web of Science ID A1994BA44G00034
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LARGE ENERGY INTERSUBBAND TRANSITIONS IN HIGH INDIUM CONTENT INGAAS/ALGAAS QUANTUM WELLS
NATO Advanced Research Workshop on Quantum Well Intersubband Transition Physics and Devices
KLUWER ACADEMIC PUBL. 1994: 251–259
View details for Web of Science ID A1994BC02U00020
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TUNABLE MID-INFRARED GENERATION BY MIXING OF NEAR-INFRARED WAVELENGTHS IN INTERSUBBAND QUANTUM WELLS
7th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society
IEEE. 1994: 175–176
View details for Web of Science ID A1994BC36M00077
- Large Energy Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells NATO ASI: Quantum Well Intersubband Transition Physics and Device Kluwer Academic Publishers. 1994: 251–9
- Growth of Epitaxial Strontium Barium Niobate Thin Films by Pulsed Laser Deposition Appl. Phys. Lett. 1994; 16 (65): 2018–2020
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MULTIPLE WAVELENGTH VERTICAL CAVITY LASER ARRAY ON A PATTERNED SUBSTRATE
7th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society
IEEE. 1994: 261–262
View details for Web of Science ID A1994BC36M00116
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APPLICATIONS OF HIGH INDIUM CONTENT INGAAS/ALGAAS QUANTUM WELLS IN THE 2-7 mu M REGIME
NATO Advanced Research Workshop on Quantum Well Intersubband Transition Physics and Devices
KLUWER ACADEMIC PUBL. 1994: 261–273
View details for Web of Science ID A1994BC02U00021
- Short Wavelength Intersubband Transitions in InGaAs/AlGaAs quantum wells grown on GaAs Appl. Phys. Lett. 1994; 6 (64): 736-8
- Reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxy on rotating substrates J. Vac. Sci. Technol. 1994; 2 (B 12): 1236-8
- MBE Growth of In0.65Ga0.35As Quantum Wells on GaAs Substrates for 1.5µm Exciton Resonance J. Crystal Growth 1994: 37-43
- Growth Studies on In0.5Ga0.5As / AlGaAs Quantum Wells Grown on GaAs with a Linearly Graded InGaAs Buffer J. Vac. Sci. Technol 1994; 2 (B12): 1019-1022
- Creation and Optimization of Vertical Cavity Phase Flip Modulators J. of Appl. Phys. 1994; 10 (75): 4878-4884
- I-V Kink in InAIAs/InGaAs MODFETs due to Weak Impact Ionization Process in the InGaAs Channel 1994
- Free-electron laser nonlinear spectroscopy of doubly resonant (5.5-3.0 µm and 4.1- 2.1 µm) InGaAs/AlGaAs asymmetric quantum wells edited by Dohler, G., H., Koteles, E., S. 1994
- Applications of High Indium Content InGaAs/AlGaAs Quantum Wells in the 2-7µm Regime NATO ASI: Quantum Well Intersubband Transition Physics and Devices edited by Liu, H., C., Levine, B., F., Andersson, J., Y. Kluwer Academic Publishers. 1994: 261–273
- The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si 1994
- Reflectance and Raman Spectra of Metallic Oxides, LaSrCoO and CaSrRuO: Resemblance to Superconducting Cuprates 1994
- Observation of Quantum Mechanical Reflections of Electrons at an In-situ Grown GaAs / Aluminum Schottky Barrier J. Vac. Sci. Technol. 1994; 2 (B 12): 1303-5
- Short Wavelength (5.36 µm to 1.85 µm) Nonlinear Spectroscopy of Coupled InGaAs / AlAs Intersubband Quantum Wells 1994
- Normal-incidence intersubband hole absorption in In0.5Ga0.5As/Al0.45Ga0.55As quantum wells 1994
- Local vibrational modes in Mg-doped gallium nitride Phys. Rev. B 1994; 49: 14758 - 14761
- Determination of AlAs mole fraction in Alx Ga1-xAs using Raman spectroscopy and x-ray diffraction J. Vac. Sci. Technol. 1994; 2 (B12): 1078-1081
- Phase-Breaking Rates from Conductance Fluctuations in a Quantum Dot 1994
- Observation of Resonant Tunneling Through Localized Continuum States in Electron Wave Interference Diodes Appl. Phys. Lett. 1994; 18 (64): 2403-2405
- Doubly resonant second harmonic generation of 2.0 µm light in coupled InGaAs/AlAs Quantum Wells Appl. Phys. Lett. 1994; 25 (64): 3365 - 3367
- High Contrast Asymmetric Fabry-Perot Appl Phys. Lett. 1993; 74: 452-454
- Large, Low-Voltage Absorption Changes and Absorption Bistability in GaAs/AlGaAs/InGaAs Asymmetric Quantum Wells J. Appl. Phys. 1993; 74: 1972-1978
- Electroabsorption Modulators Operating at 1.3 µm on GaAs substrates Optical and Quantum Electronics 1993; 25: 5953-5964
- The Effect of Si Planar Doping on DX Centers in Al0.26Ga0.74As J. Crystal. Growth. 1993; 127: 737-741
- 1.3µm Electroabsorption Reflection Modulators on GaAs Appl. Phys. Lett. 1993; 63: 806-808
- Schwabish Gmundt, Germany 1993
- 1.3 µm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer 1993
- Low Voltage, Low Chirp, Absorptively Bistable Transmission Modulators Using Type IIA and Type IIB In0.3Ga0.7As/Al0.33Ga0.67As/In0.15Ga0.85As Asymmetric Coupled Quantum Wells J. Appl. Phys. 1993; 11 (74): 6495-6502
- Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates Jpn. J. Appl. Phys. Part 1 1993; 32 (11A): 4923-4927
- Critical Passivation Ledge Thickness in AlGaAs/GaAs Heterojunction Bipolar Transistors J. Vac. Sci. Technol. 1993; B 11: 6-9
- Zero Chirp Quantum Well Asymmetric Fabry-Perot Reflection Modulators Operating Beyond the Matching Condition J. Appl. Phys. 1993; 12 (74): 7061-7066
- Surface-emitting Second-harmonic Generation in a Semiconductor Vertical Resonator Optics Lett. 1993; 21 (18): 1798-1800
- Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells Appl. Phys. Lett. 1993; 3 (63): 364-366
- High Contrast Reflection Electro-absorption Modulators with Zero Phase Change Appl. Phys. Lett. 1993; 63: 452-454
- Hydrogen Passivation of Nonradiative Defects in InGaAs/AlxGa1-xAs Quantum Wells J. Appl. Phys. 1993
- Cut-off Frequency and D.C. Gain of Heterojunction Bipolar Transisitrs Int. J. Electronics 1993; 74: 401-106
- The Effect of Si Doping on DX Centers in Al.26Ga.74As 1993
- Graded Buffer Layers for Molecular Beam Epitaxial Growth of High In Content InGaAs On GaAs for Optoelectronics 1993
- Simulation of RHEED Intensity Oscillations During MBE Growth J. Crystal. Growth. 1993; 127: 1025-1029
- Phase Characteristics of Reflection Electro-Absorption Modulators Appl. Phys. Letts. 1993; 62: 2158-2160
- Lattice Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates IEEE Trans. Ed 1993
- Enhancement of Photoluminescence Intensity in InGaAs/Al(x)Ga(1-x)As Quantum Wells by Hydrogenation Appl. Phys. Lett. 1992; 60: 2276-2278
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LOW-FREQUENCY NOISE CHARACTERIZATION OF NPN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
18TH INTERNATIONAL SYMP ON GALLIUM ARSENIDE AND RELATED COMPOUNDS
IOP PUBLISHING LTD. 1992: 323–328
View details for Web of Science ID A1992BV60K00063
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ELECTROABSORPTION IN INGAAS/ALGAAS QUANTUM-WELLS
18TH INTERNATIONAL SYMP ON GALLIUM ARSENIDE AND RELATED COMPOUNDS
IOP PUBLISHING LTD. 1992: 437–441
View details for Web of Science ID A1992BV60K00082
- Stacking Fault Stability in GaAs/Si Hetero-Epitaxial Growth Crystal Growth 1992; 123: 439-444
- Molecular Beam Epitaxy Growth of Vertical Cavity Optical Devices with In-Situ Corrections Appl. Phy. Lett. 1992; 61: 1387-1889
- Ideality Factor of Extrinsic Base Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors Elect. Lett. 1992; 28: 379-380
- High-Performance Microwave AlGaAs-InGaAs Pnp HBT with High-DC Current Gain IEEE Microwave & Guided Wave Letts. 1992: 331-333
- Geometrical Growth Rate Nonuniformity Effects on Reflection High-Energy Electron Diffraction Signal Intensity Decay J. Vac. Sci. Technol. B 1992: 825-828
- Effects of Replacing a Portion of the AlGaAs Base-Emitter Junction of Heterojunction Bipolar Transistors by GaAs Int. Jrnl. Elect. 1992; 72: 401-408
- Design and Performance of a Low-Threshold-Current Grating-Coupled Surface-Emitting Laser Solid State Elect. 1992; 35: 1241-1245
- Derivation of the Emitter-Collector Transit Time of Heterojunction Bipolar Transistors Solid State Elect. 1992; 35: 541-545
- Dependence of the Base Crowding Effect on Base Doping and Thickness for Npn AlGaAs/GaAs HBTs Elect. Lett. 1992; 22 (27): 2048-2050
- Contact Impedance in Heterojunction Bipolar Transistors Solid State Elect. 1992; 35: 547-552
- Hydrogen Passivation of Defects in InGaAs/AlxGa1-xAs Quantum Wells 1992
- Optical Phase Modulator Utilizing Electroabsorption in a Fabry-Perot Cavity Appl. Phys. Lett. 1992; 60: 1061-1063
- Nonlinear Optical Properties and Ultrafast Response of GaAs/AlAs Type-II Quantum Wells IEEE JQE 1992; 28: 2404-2415
- Low-Conductance Drain (LCD) Design of InAlAs/InGaAs/InP HEMT’s IEEE Electron Dev. Lett. 1992; 13: 535-537
- Low Threshold Current Grating-Coupled Surface-Emitting Strained-InGaAs Single Quantum Well Laser with GaAs Optical Confinement Structure Appl. Phys. Lett. 1992; 60: 265-267
- Free Chare-Carrier Plasmons in Ba1-x KxBi03: A Close Relation to Cuprate Superconductors Phys. Rev. B 1992; 46: 1182-1187
- Current Gain of Graded AlGaAs/GaAs Heterojunction Bipolar Transistors With and Without a Base Quasi-Electric Field IEEE Tran. Elect. Dev. 1992; 39: 2422-2429
- Current Dependence of Base-Collector Capacitance of Bipolar Transistors Solid State Elect. 1992; 35: 1051-1057
- Effects of Emitter-Base Contact Spacing on the Current Gain in Heterojunction Bipolar Transisitors Jpn. J. Appl. Phy. 1992; 31: 2349-2351
- A High-Gain AlGaAs/GaAs Heterojunction Bipolar Transistor Grown on Silicon Substrate Jpn. J. Appl. Phys. 1992; 31: 2656-2659
- 1.3 µm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer J. Crystal Growth. 1992: 759-764
- Monolithic Integration GaAs and Si Bipolar Devices for Optical Interconnect Systems 1992
- X-Valley Tunneling in Single AlAs Barriers J. Appl. Phys. 1992; 72: 988-992
- InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substratee Electronics Letters 1992; 7 (28): 655-656
- Diode Ideality Factor for Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transisitors IEEE Trans. Elect. Dev. 1992; 39: 2726-2732
- An Advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Applications Jpn. J. Appl. Phys. 1992; 31: L452-L454
- Visible Wavelength Fabry-Perot Reflection Modulator Using Indirect-Gap AlGaAs/As Elect. Lett 1992; 28: 1170-1171
- Parastic Conduction Current in the Passivation Ledge of AlGaAs/GaAs Heterojunction Bipolar Transistors Solid State Elect. 1992; 35: 891-895
- Optical Gain and Ultrafast Nonlinear Response in GaAs/AlAs Type-II Quantum Wells Appl. Phys. Lett. 1992; 14: 1661-1663
- Mesa Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors with an Emitter-Base-Emitter Structure J. Vac. Sci. Technol. B 1992: 1285-1290
- Low-Frequency Noise Properties of N-p-n AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Trans. Elect. Dev. 1992; 39: 2383-2394
- Investigation of High In Content InGaAs Quantum Wells Grown on GaAs by Molecular Beam Epitaxy Elect. Lett. 1992; 28: 1193-1195
- Hydrogen Passivation of Si and Be Dopants in InAlAs 1992
- Noninterferometric Optical Subtraction using Reflection-Electroabsorption Modulators Optics Letters 1992; 17: 58-60
- Laser-Power Stabilization Using a Quantum-Well Modulator IEEE Photonics Tech. Lett. 1992; 4: 136-139
- Influence of Dislocations on the DC Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Elect. Dev. Lett. 1992; 13: 232-234
- Anti-Resonances in the Transmission of a Simple Two-State Model Phys. Rev. B 1992; 19 (46): 12769-12772
- Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing Appl. Phys. Lett. 1992; 20 (60): 2463-65
- GaAs/AlAs Quantum Wells for Electroabsorption Modulators Appl. Phys. Lett. 1992; 60: 2779-2781
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ACCUMULATION-MODE GAALAS GAAS BIPOLAR-TRANSISTOR
1991 INTERNATIONAL CONF ON SOLID STATE DEVICES AND MATERIALS ( SSDM 91 )
JAPAN SOC APPLIED PHYSICS. 1991: 3846–49
View details for Web of Science ID A1991HF42800065
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MOLECULAR-BEAM EPITAXIAL-GROWTH AND STRUCTURAL DESIGN OF IN0.52AL0.48AS/IN0.53GA0.47AS/INP HEMTS
6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY
ELSEVIER SCIENCE BV. 1991: 489–94
View details for Web of Science ID A1991FT19000090
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ACCURATE MEASUREMENT OF MBE SUBSTRATE-TEMPERATURE
6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY
ELSEVIER SCIENCE BV. 1991: 131–35
View details for Web of Science ID A1991FT19000024
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GROWTH OF SUPERCONDUCTING BI2SR2CAN-1CUNOX THIN-FILMS BY ATOMICALLY LAYERED EPITAXY
6TH INTERNATIONAL CONF ON MOLECULAR BEAM EPITAXY
ELSEVIER SCIENCE BV. 1991: 973–77
View details for Web of Science ID A1991FT19000181
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QUANTUM-WELLS AND ARTIFICIALLY STRUCTURED MATERIALS FOR NONLINEAR OPTICS
CONF ON PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS
SPIE - INT SOC OPTICAL ENGINEERING. 1991: 262–273
View details for Web of Science ID A1991BT01M00026
- Direct Extraction of the AlGaAs/GaAs Heterojunction Bipolar Transistor Small-Signal Equivalent Circuit IEEE Transactions on Electron Dev. 1991; 38: 2018-2024
- Lateral Resonant Tunneling Transistors Employing Field-Induced Quantum Wells and Barriers 1991
- Geometrical Growth Rate Nonuniformity Effects on RHEED Signal Intensity Decay 1991
- Femtosecond Gain Dynamics in Semiconductors 1991
- Thermal Dissociation Energy of the Si-H Complex in n-type GaAs Appl. Phys. Lett. 1991; 59: 461-463
- Second-Order Susceptibility in Asymmetric Quantum Wells and its Control by Proton Bombardment Appl. Phys. Lett. 1991; 58: 1724-1726
- Optical Study of Plasmons in Tl2Ba2Ca2Cu3O10 Phys. Rev. 1991; 43: 1169-1172
- Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes Superlattices & Microstructures 1991; 10: 175-178
- Accurate Measurement of MBE Substrate Temperature J. Crystal Growth 1991; 111: 131-135
- Reflection Electro-Absorption Modulator with High Reflectivity Change in a Novel Normally-Off Configuration 1991
- Reduction of Low-Frequency Noise In Npn AlGaAs/GaAs HBTs 1991
- Electro-Absorption in InGaAs/AlGaAs Quantum Wells 1991
- Dynamic Optical Grating for Laser Beam Steering Applications 1991
- Accumulation mode GaAlAs/GaAs bipolar transistor 1991
- Plasmons in High-Temperature Superconductors Physica C 1991; 185: 1019-1020
- Threshold Reduction in Strained InGaAs Single Quantum Well Lasers by Rapid Thermal Annealing Appl Phys. Lett. 1991; 59: 1040-1042
- Enhancement of Optical Reflectivity of High-Tc Superconducting Films by Ion Milling Appl. Phys. Letts. 1991; 58: 2558-2560
- A Tight Binding Model for GaAs/AlAs Resonant Tunnel Diodes Phys. Rev.B 1991; 43: 4777-4784
- Plasmons in High -Tc Cuprate Superconductors edited by Ashkenazy, J., Vezzol, G. 1991
- Physical Origin of the High Output Conductance in In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs 1991
- Accumulation mode GaAlAs/GaAs bipolar transistor with two dimensional hole gas base 1991
- Surface Emitting Second Harmonic Generation in Vertical Resonator Elect. Ltts. 1991; 27: 1882-1884
- Preparation of Optically Smooth Surfaces of High-Tc Superconducting Films 1991
- Low-Frequency Noise Characterization of Npn AlGaAs/GaAs Heterojunction Bipolar Transistors 1991
- Femtosecond-gain Spectroscopy of GaAs 1991
- Theoretical Comparison of Base Bulk Recombination Current and Surface Recombination Current of a MESA AlGAAs/GaAs Heterojunction Bipolar Transistor Solid State Electronics 1991; 34: 1119-1123
- The Design of GaAs Resonant Tunneling Diodes with Peak Current Densities over 2x105 a cm-2 J. Appl Phys. 1991; 69: 3345-3350
- Study of Optical Plasmons InLa1.85Sr0.15Cu2O4 Physica C 1991; 174: 435-439
- Quantum Well Modulators for Optical Beam Steering Applications IEEE Phot. Tech. Lett. 1991; 3: 790-792
- Novel Cavity Design for High Reflectivity Changes in a Normally Off Electroabsorption Modulator Appl. Phys. Lett. 1991; 58: 813-815
- Electroabsorptive Modulators in InGaAs/AlGaAs Appl Phys. Lett. 1991; 59: 888-890
- Effect of High Current Density and Doping Concentration on the Characteristics of GaAs/AlAs Vertically Integrated Resonant Tunneling Diodes J. Appl. Phys. 1991; 11 (70): 7141 - 7148
- Comparison of the Effects of Surface Passivation and Base Quasi-Electric Fields on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors Grown on GaAs and Si Substrates Appl Phys. Lett. 1991; 59: 691-693
- The Relative Effect on the Oxygen Concentration in YBa2Cu3O7-d of Atomic and Ionic Oxygen Fluxes, Produced by a Small Compact Electron Cyclotron Resonance Source J. Vac. Sci. Technol. 1991; A9: 2587-2593
- Molecular Beam Epitaxial Growth and Structural Design In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs J. Crystal. Growth 1991; 111: 489-494
- High Output Conductance of InAlAs/InGaAs/InP MODFET due to Weak Impact Ionization in the InGaAs Channel IEDM Technical Digest 1991: 247-250
- AlGaAs/AlAs QW Modulator for 6328Å Operation Elect. Letts. 1991; 27: 1971-1973
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OPTIMIZATION OF MODULATION RATIO AND INSERTION LOSS IN REFLECTIVE ELECTROABSORPTION MODULATORS
APPLIED PHYSICS LETTERS
1990; 57 (15): 1491-1492
View details for Web of Science ID A1990EC36300005
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ATOMICALLY LAYERED HETEROEPITAXIAL GROWTH OF SINGLE-CRYSTAL FILMS OF SUPERCONDUCTING BI2SR2CA2CU3OX
APPLIED PHYSICS LETTERS
1990; 57 (9): 931-933
View details for Web of Science ID A1990DV75300031
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NOVEL DOUBLY SELF-ALIGNED ALGAAS/GAAS HBT
ELECTRONICS LETTERS
1990; 26 (17): 1361-1362
View details for Web of Science ID A1990DW99500022
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INSITU GROWTH OF SINGLE-CRYSTAL BI2SR2CANCUN+1OX THIN-FILMS BY ATOMICALLY LAYERED EPITAXY
SPRINGER. 1990: 59–59
View details for Web of Science ID A1990DU14400174
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IMPROVED DESIGN OF ALAS/GAAS RESONANT TUNNELING DIODES
APPLIED PHYSICS LETTERS
1990; 56 (17): 1676-1678
View details for Web of Science ID A1990DA34800023
- Growth of untwinned Bi2Sr2Ca2Cu3Ox Thin Films by Atomically Layered Epitaxy Appl. Phys. Lett. 1990: 1049-1051
- Superstructure in Thin Films of Bi-Based Compounds on MgO J. J. Appl. Phy 1990; 9: L1638-L1641
- From Bloch Functions to Quantum Wells International J. Modern Physics B 1990; 6 (4): 1149-1179
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NEW LATERAL RESONANT TUNNELING FETS FABRICATED USING MOLECULAR-BEAM EPITAXY AND ULTRA-HIGH RESOLUTION ELECTRON-BEAM LITHOGRAPHY
16TH INTERNATIONAL SYMP ON GALLIUM ARSENIDE AND RELATED COMPOUNDS
IOP PUBLISHING LTD. 1990: 875–879
View details for Web of Science ID A1990BR54S00147
- Optical Anisotropy of Bi2Sr2CaCu208 Phys. Rev. 1990; 10 (B41): 7251-7253
- Impact of Surface Layer on In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors IEEE Electron Dev. Lttrs 1990; 7 (11): 315-313
- Characterization of Surface-Undoped In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors IEEE Tran. Electron. Dev. 1990; 10 (37): 2165-2170
- A High Frequency Pnp AlGaAs/InGaAs Heterojunction Bipolar Transistor with an Ultrathin Strained Base Electron. Lett. 1990; 26: 2000-2002
- In-Situ Growth of Single Crystal Bi2Sr2CanCun+1Ox Thin Films by Atomically Layered Epitaxy 1990
- Defect Structures in MBE Grown GaAs on Si 1990
- Atomically Layered Heteroepitaxy of High Temperature Superconducting Thin Films: Metastable Phases and Superlattice Structures 1990
- 77K Photoluminescence Investigation of Residual Stress in MBE-Grown GaAs/Si Layers 1990
- Influence of Ballistic Electrons on the Device Characteristics of Vertically Integrated Resonant Tunneling Diodes Appl. Phys. Lett 1990; 14 (58): 1482-1484
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RESONANT TUNNELING OF 1-DIMENSIONAL ELECTRONS ACROSS AN ARRAY OF 3-DIMENSIONALLY CONFINED POTENTIAL WELLS
SUPERLATTICES AND MICROSTRUCTURES
1990; 7 (2): 131-134
View details for Web of Science ID A1990DT26500007
- Molecular Beam Epitaxy-a Path to Novel High Tc Superconductors 1990
- Two Selective Etching Solutions for GaAs on InGaAs and GaAs/AlGaAs on InGaAs J. Electrochem. Soc. 1990; 9 (137): 2913-2914
- Molecular Beam Epitaxial Growth of Layered Bi-Sr-Ca-Cu-O Compounds J. Cryst. Growth. 1990: 361-375
- Quantum Wells and Artificially Structured Materials for Non-Linear Optics 1990
- Improved Design of AlAs/GaAs Resonant Tunneling Diodes 1990
- A new Direct Method for Determining the Heterojunction Bipolar Transistor Equivalent Circuit Model 1990
- Optimization of Reflection Electro-Absorption Modulators 1990
- In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy 1990
- Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique 1990
- Comparison of Pnp AlGaAs/GaAs Heterojunction Bipolar Transistor with and Without Base Quasielectric Field 1990
- Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes 1990
- From Bloch Functions to Quantum Wells Conductivity and Magnetism, The Legacy of Felix Bloch edited by Little, William, A. World Scientific, Singapore. 1990: 23–53
- Wannier-Stark Localization in a Strained InGaAs/GaAs Superlattice Appl. Phys. Lett. 1990; 20 (57): 2116-2117
- Uniform, High-Gain AlGaAs/In0.05Ga0.95As/GaAs P-n-p Heterojunction Bipolar Transistors by Dual Selective Etch Process IEEE Electron Device Lett. 1990; 11: 425-427
- Large Reflectivity Modulation Using InGaAs-GaAs IEEE Photon. Techn. Lett. 1990; 2: 807-809
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QUANTUM INTERFERENCE DEVICES FABRICATED USING MOLECULAR-BEAM EPITAXY AND ULTRA-HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1989: 2617–18
View details for Web of Science ID A1989AW89000080
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RESONANT TUNNELING DIODES FOR SWITCHING APPLICATIONS
APPLIED PHYSICS LETTERS
1989; 54 (2): 153-155
View details for Web of Science ID A1989R651600024
- Effect of Emitter-Base Spacing on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors IEEE Electron Device Letters 1989: 200-202
- The X-Valley Transport in GaAs/AlAs Triple Barrier Structures J. Appl. Phys. 1989; 12 (65): 5199-5201
- Influence of As4/Ga Flux Ratio on Be Incorporation in Heavily Doped GaAs Grown by Molecular Beam Epitaxy J. Crystal Growth 1989: 301-304
- GaAs/AlGaAs Power HBT on Silicon Substrate Electron. Lett. 1989; 19 (25): 1968-1269
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CHARACTERIZATION OF ALGAAS AND GAAS MATERIALS AND INTERFACES GROWN ON MISORIENTED-(110) GAAS BY MBE
15TH INTERNATIONAL SYMP ON GALLIUM ARSENIDE AND RELATED COMPOUNDS
INST PHYSICS PUBL DIV. 1989: 53–56
View details for Web of Science ID A1989BT01Y00009
- Variation of the Spacer Layer Between two Resonant Tunneling Diodes Appl. Phys. Lett. 1989: 1871-1873
- Molecular Beam Epitaxy AlGaAs/GaAs Grown in the Presence of Hydrogen J. Crystal Growth 1989: 305-308
- MBE Growth of High Critical Temperature Superconductors J. Crystal Growth 1989: 607-616
- Effect of Bulk Recombination Current on the Current Gain of GaAs/AIGaAs Heterojunction Bipolar Transistors in GaAs-on-Si IEEE Electron Dev. Lett. 1989; 10 (10): 458-460
- Resonant Tunneling Diodes for Switching Applications 1989
- AlGaAs/InGaAs Strained-Base PnP Heterojunction Bipolar Transistors Electron. Lett. 1989: 993-995
- Monolithically Integrated Fiber-Optic Front-End Receiver in GaAs on Si Technology 1989
- Microwave Characteristics of MBE Grown Resonant Tunneling Devices 1989
- Improved Vertically Integrated Resonant Tunneling Diodes 1989
- Photonics Brief Lessons in High Technology: Understanding the End of this Century to Capitalize on the Next edited by Meindl, James, D. Portable Stanford, Stanford, CA. 1989: 31–61
- Reduction of Gallium-Related Oval Defects J. Vac. Sci. & Technol. 1989; 2 (B7): 296-298
- Many-Body Effects in the Luminescence Spectra of GaAs/AlGaAs Modulation Doped Heterostructures ACTA Physica Polonica 1989: 33-37
- Influence of the As:Ga Flux Ratio on Growth Rate, Interface Quality, and Impurity Incorporation in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy Appl. Phys. Lett. 1989; 7 (54): 623-625
- Growth Kinetics, Impurity Incorporation, Defect Generation, and Interface Quality of MBE-grown AlGaAs/GaAs Quantum Wells: Role of group III and group V Fluxes J. Vac. Sci. Technol. 1989; 4 (B7): 704-709
- Umklapp Electron-Electron Scattering Resistivity in YBa2Cu3O7-x IEEE Elect. Dev. Lett. 1989; 3 (10): 104-106
- Observation of Extremely Large Quadratic Susceptibility at 9.6 - 10.8µm in Electric-field-biased AlGaAs Quantum Wells Phys, Rev. Lett. 1989; 1 (62): 1041-1044
- Development of Molecular Beam Epitaxial Growth of High Temperature Superconducting Compounds 1989
- New Lateral Resonant Tunneling FETs Fabricated Using Molecular Beam Epitaxy and Ultra-High Resolution Electron Beam Lithography 1989
- Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds 1989
- The Effect of Si Doping in AlAs Barrier Layers of AlAs-GaAs-AlAs Double Barrier Resonant Tunneling Diodes Appl. Phys. Lett. 1989; 6 (55): 572-574
- Phase Characterization of Dysprosium Barium Copper Oxide Thin Films Grown on Strontium Titanate by Molecular Beam Epitaxy J. Mater. Res. 1989; 3 (4): 476-495
- Fabrication of Resonant Tunneling Diodes for Integrated Circuit and Microwave Applications IEEE Electron Device Letters 1989: 104-106
- Epitaxial Growth of High Temperature Superconducting Thin Films J. Vac. Sci. & Technol. 1989; 2 (B7): 319-323
- Elastic Scattering in Resonant Tunneling Devices With One Degree of Freedom J. of Superlattices and Microstructures 1989; 2 (5): 251-253
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THE EFFECT OF STRAIN ON THE BAND-STRUCTURE OF GAAS AND IN0.2GA0.8AS
A V S AMER INST PHYSICS. 1988: 1348–49
View details for Web of Science ID A1988N974800006
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PROCESSING AND CHARACTERIZATION OF GAAS GROWN INTO RECESSED SILICON
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
1988; 6 (2): 717-719
View details for Web of Science ID A1988N138700054
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GROWTH OF GAAS AND ALGAAS ON MISORIENTED (110) GAAS BY MOLECULAR-BEAM EPITAXY
AMER INST PHYSICS. 1988: 636–37
View details for Web of Science ID A1988N138700029
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RESONANT TUNNELING OF ELECTRONS OF ONE OR 2-DEGREES OF FREEDOM
APPLIED PHYSICS LETTERS
1988; 52 (8): 657-659
View details for Web of Science ID A1988M163700021
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A LATERAL RESONANT TUNNELING FET
SUPERLATTICES AND MICROSTRUCTURES
1988; 4 (2): 181-186
View details for Web of Science ID A1988N360300011
- Limit Cycle Oscillations in Negative Differential Resistance Devices J. Appl. Phys. 1988; 5 (64): 2798-2800
- Elastic Scattering Centers in Resonant Tunneling Diodes Appl. Phys. Lett. 1988; 3 (53): 201-203
- Effect of Strain on the Band Structure of GaAs and In0.2Ga0.8As Appl. Phys. Lett. 1988; 4 (52): 308-310
- A Lateral Resonant Tunneling Field-Effect Transistor Appl. Phys. Lett. 1988; 23 (52): 1982-1984
- Flux Ratio Dependence of Growth Rate, Interface Quality, and Impurity Incorporation in MBE Grown AlGaAs/GaAs Quantum Wells 1988
- Molecular Beam Epitaxy and Deposition of High Tc Superconductors J. Vac. Sci. Technol. B 1988; 2 (6): 799-803
- (110)-Oriented GaAs MESFETs IEEE Elect. Dev. Lett. 1988; 3 (9): 119 - 123
- Sodium Sulfide Treated (100) and Misoriented (110) GaAs Surfaces 1988
- The Effect of Elastic Scattering Centers on the Current Voltage Characteristics of Double Barrier Resonant Tunneling Diodes 1988
- Heteronucleation Onto Si Surfaces 1988
- Growth of GaAs on Si in Masked, Etched Trenches edited by Choi, H., K., Hull, R., Ishiwars, H. 1988
- Influence of Buffer Layer Thickness on DC Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors Grown on Silicon Substrates IEEE Electron Device Lett. 1988; 12 (9): 657-659
- Hot Electron Transport Parallel to Strong Magnetic Fields in Gallium Arsenide Solid State Electronics 1988; 31 (3/4): 785-788
- Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFETs for Gate Lengths to 550 Å IEEE Electron Device Lett. 1988; 3 (9): 148-150
- Monolithic Integration of GaAs/AlAs Resonant Tunnel Diode Load and GaAs Enhancement-Mode MESFET Drivers for Tunnel Diode FET Logic Gates 1988
- High Carrier Densities in GaAs/AlGaAs Modulation n-Doped Quantum Wells: From One- to Two-Component Plasma 1988
- Summary Abstract: MBE Growth of Tunable Multi-Layer Interference Optical Modulators J. Vac. Sci. Technol. B. 1988; 2 (6): 688
- Molecular Beam Epitaxy of Layered Dy-Ba-Cu-O Compounds Appl. Phys. Lett. 1988; 17 (53): 1660-1662
- Substrate Surface Structure and Nucleation Phenomena in Epitaxial Growth of GaAs on Vicinal Si (100) Substrates 1988
- Sub-100 nm Gate Length GaAs MESFETs and MODFETs Fabricated by a Combination of Molecular Beam Epitaxy and Electron Beam Lithography 1988
- Room-Temperature Observation of Resonant Tunneling Through a AlGaAs/GaAs Quasi-Parabolic Quantum Well Grown by MBE Appl. Phys. Lett. 1988; 17 (52): 1422-1424
- Sulfur Incorporation in Undoped High Purity n-Type GaAs Grown by Molecular Beam Epitaxy 1988
- Spatial Inhomogeneities of the Luminescence and Electrical Properties of MBE Grown GaAs on Si 1988
- Picosecond Pulsing and Sampling by GaAs Photodetectors Fabricated on Silicon Substrates 1988
- Molecular Beam Epitaxy of Layered DY-BA-CU-O Compounds 1988
- GaAs/Si Nucleation and Buffer Layer Growth 1988
- Characterization of AlGaAs and GaAs Materials and Interfaces Grown on Misoriented (110) GaAs by MBE 1988
- Summary Abstract: Growth of GaAs and AlGaAs on misoriented (110) GaAs by Molecular Beam Epitaxy J. Vac. Sci. Technol. B 1988; 2 (6): 636-637
- Deep Level Transient Spectroscopy Study of GaAs Surface States Treated With Inorganic Sulfides Appl. Phys. Lett. 1988; 12 (53): 1059-1061
- Characterization of Al0.25Ga0.75As Grown by Molecular Beam Epitaxy J. Vac. Sci. Technol. B 1988; 2 (6): 631-635
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RELATIONSHIPS BETWEEN SUBSTRATE CLEANING, SURFACE-STRUCTURE, AND HETERONUCLEATION IN EPITAXIAL-GROWTH OF GAAS ON SI(100)
ELECTROCHEMICAL SOC INC. 1987: C545–C545
View details for Web of Science ID A1987J647201730
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STRUCTURAL-CHANGES OCCURRING DURING THE INITIAL MBE GROWTH-STAGES OF GAAS/SI(100)
MINERALS METALS MATERIALS SOC. 1987: A26–A27
View details for Web of Science ID A1987J352900122
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OBSERVATION OF STARK SHIFTS IN QUANTUM-WELL INTERSUBBAND TRANSITIONS
APPLIED PHYSICS LETTERS
1987; 50 (11): 685-687
View details for Web of Science ID A1987G640500020
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INFRARED TRANSMISSION SPECTROSCOPY OF GAAS DURING MOLECULAR-BEAM EPITAXY
JOURNAL OF CRYSTAL GROWTH
1987; 81 (1-4): 38-42
View details for Web of Science ID A1987G305600008
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THE GROWTH OF GAAS ON SI BY MBE
JOURNAL OF CRYSTAL GROWTH
1987; 81 (1-4): 205-213
View details for Web of Science ID A1987G305600039
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POLYNOMIAL KINETIC-ENERGY APPROXIMATION FOR DIRECT-INDIRECT HETEROSTRUCTURES
SUPERLATTICES AND MICROSTRUCTURES
1987; 3 (2): 167-169
View details for Web of Science ID A1987G781700015
- Complementary MODFET Circuits Consisting of Pseudomorphic N-MODFET and Double Heterojunction P-MODFET by MBE, IEDM Washington, DC 1987: 892
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- Determination of the Natural Valence-Band Offset in InxGa1-xAs System Appl. Phys. Lett. 1987; 20 (51): 1632 - 1634
- The Nucleation and Growth of GaAs on Si 1987
- Nucleation of GaAs on Vicinal Si(100) Surfaces 1987
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- A p-Channel Strained Quantum Well Modulation Doped Field Effect Transistor Extended Abstracts of the Japan Society of Applied Physics Meeting, Tokyo 1987; 804.83
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- Growth of High Tc Superconducting Thin Films using Molecular Beam Epitaxy Techniques Appl. Phys. Lett. 1987; 15 (51): 1191
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POLARON TRANSPORT IN QUASI-ONE-DIMENSIONAL SEMICONDUCTOR HETEROSTRUCTURES
SURFACE SCIENCE
1986; 174 (1-3): 459-465
View details for Web of Science ID A1986D965500078
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ENERGY-MOMENTUM RELATION FOR POLARONS CONFINED TO ONE DIMENSION
PHYSICAL REVIEW B
1986; 33 (12): 8284-8290
View details for Web of Science ID A1986C899400045
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- Stanford University: Stanford Electronics Laboratory and Microwave Ginzton Laboratory Forthieth Anniversary of the Joint Services Electronics Program edited by Shostak, A. ANSER, Arlington, VA. 1986
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- Effect of Hydrogen on Undoped and Lightly Si-Doped Molecular Beam Epitaxial GaAs Layers Appl. Phys. Lett. 1986; 19 (48): 1291-3
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- MBE GaAs Heteroface Solar Cells Grown on Ge Appl. Phys. Lett. 1980; 37: 1104
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- A Non-Lattice Matched Monolithic Multicolor Solar Cell 1980
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- Monolithic Multicolor Solar Conversion 1980
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- Observation of Charge Storage and Charge Transfer in a GaAlAsSb/GaSb CCD Appl. Phys. Lett 1980; 36: 458
- A 500 MHz GaAs Charge Coupled Device Appl. Phys. Lett. 1980; 36: 151
- Performance Losses in High Efficiency Monolithic Multijunction Solar Cells 1980
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- Analog Signal Processing Complement to GaAs Digital ICs 1979
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- High Efficiency AlGaAs/GaAs Concentrator Solar Cells Appl. Phys. Lett. 1979; 34: 147
- Reduced Geometry GaAs CCD for High Speed Signal Processing 1979
- Intercell Ohmic Contacts for High Efficiency Multijunction Solar Converters 1979
- 20 KW Gallium Arsenide Photovoltaic Dense Array for Central Receiver Concentrator Applications 1979
- Application of GaAs CCD's to High Speed Signal Processing 1979
- An Ultra High Speed GaAs CCD 1979
- 259 Gate GaAs CCD Shift Register for High Speed Applications 1979
- Interface Studies of Al Gal As-GaAs Heterojunctions J. Appl. Phys. 1979; 50: 3383
- GaAlAs/GaAs Heterojunction Schottky Barrier Gate CCD 1979
- Development of Stacked Multiple Bandgap Solar Cells 1979
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- Ionization Coefficients of Ga0.72Al0.28Sb Avalanche Photodetectors Appl. Phys. Lett 1978; 33: 948
- 1.0-1.4µm High-Speed Avalanche Photodiodes Appl. Phys. Lett 1978; 33: 416
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- High Speed GaAs CCD 1978
- (SN)x-GaAs Polymer Semiconductor Solar Cells Appl. Phys. Lett 1978; 33: 812
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- High Efficiency Thin Window Ga1-xAlx As/GaAs Solar Cells 1976
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- How Adding Electrons Scrambles the Electronic Spectrum of a Quantum Dot