Bio

https://www.bucknell.edu/meet-bucknell/bucknell-leadership/meet-president-bravman

Academic Appointments

Administrative Appointments

  • President, Bucknell University (2010 - Present)

Contact

  • Academic
    bravman@stanford.edu
    University - Emeritus faculty Department: Materials Science and Engineering Position: Emeritus Faculty, Acad Council

Additional Info

  • Mail Code: 3082

All Publications

  • Stress relaxation in free-standing aluminum beams THIN SOLID FILMS Lee, H. J., Zhang, P., Bravman, J. C. 2005; 476 (1): 118-124

    View details for DOI 10.1016/j.tsf.2004.10.001

    View details for Web of Science ID 000227509100016

  • White beam analysis of coupling between precipitation and plastic deformation during electromigration in a passivated Al(0.5wt.% Cu) interconnect METALLOFIZIKA I NOVEISHIE TEKHNOLOGII Barabash, R. I., Ice, G. E., Tamura, N., Valek, B. C., Bravman, J. C., Patel, J. R. 2005; 27 (1): 75-94

    View details for Web of Science ID 000229894300007

  • Quantitative characterization of electromigration-induced plastic deformation in Al(0.5wt%Cu) interconnect Symposium on Characterization and Mechanical Reliability of Advanced Electronic Materials at Nanoscale Barabash, R. I., Ice, G. E., Tamura, N., Valek, B. C., Bravman, J. C., Spolenak, R., Patel, J. R. ELSEVIER SCIENCE BV. 2004: 24–30

    View details for DOI 10.1016/j.mee.2003.09.009

    View details for Web of Science ID 000222459800004

  • Study on the strength and elongation of free-standing Al beams for microelectromechanical systems applications APPLIED PHYSICS LETTERS Lee, H. J., Zhang, P., Bravman, J. C. 2004; 84 (6): 915-917

    View details for DOI 10.1063/1.1646765

    View details for Web of Science ID 000188763800027

  • Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length JOURNAL OF ADHESION SCIENCE AND TECHNOLOGY JENKINS, M. L., Dauskardt, R. H., Bravman, J. C. 2004; 18 (13): 1497-1516

    View details for Web of Science ID 000226165300002

  • Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu) interconnect JOURNAL OF APPLIED PHYSICS Barabash, R. I., Ice, G. E., Tamura, N., Valek, B. C., Bravman, J. C., Spolenak, R., Patel, J. R. 2003; 93 (9): 5701-5706

    View details for DOI 10.1063/1.1563033

    View details for Web of Science ID 000182296700108

  • Local plasticity of Al thin films as revealed by X-ray microdiffraction PHYSICAL REVIEW LETTERS Spolenak, R., Brown, W. L., Tamura, N., MacDowell, A. A., Celestre, R. S., Padmore, H. A., Valek, B., Bravman, J. C., Marieb, T., Fujimoto, H., Batterman, B. W., Patel, J. R. 2003; 90 (9)

    Abstract

    Grain-to-grain interactions dominate the plasticity of Al thin films and establish effective length scales smaller than the grain size. We have measured large strain distributions and their changes under plastic strain in 1.5-microm-thick Al 0.5% Cu films using a 0.8-microm-diameter white x-ray probe at the Advanced Light Source. Strain distributions arise not only from the distribution of grain sizes and orientation, but also from the differences in grain shape and from stress environment. Multiple active glide plane domains have been found within single grains. Large grains behave like multiple smaller grains even before a dislocation substructure can evolve.

    View details for DOI 10.1103/PhysRevLett.90.096102

    View details for Web of Science ID 000181443300036

    View details for PubMedID 12689241

  • Scanning X-ray microdiffraction with submicrometer white beam for strain/stress and orientation mapping in thin films JOURNAL OF SYNCHROTRON RADIATION Tamura, N., MacDowell, A. A., Spolenak, R., Valek, B. C., Bravman, J. C., Brown, W. L., Celestre, R. S., Padmore, H. A., Batterman, B. W., Patel, J. R. 2003; 10: 137-143

    Abstract

    Scanning X-ray microdiffraction (microSXRD) combines the use of high-brilliance synchrotron sources with the latest achromatic X-ray focusing optics and fast large-area two-dimensional-detector technology. Using white beams or a combination of white and monochromatic beams, this technique allows for the orientation and strain/stress mapping of polycrystalline thin films with submicrometer spatial resolution. The technique is described in detail as applied to the study of thin aluminium and copper blanket films and lines following electromigration testing and/or thermal cycling experiments. It is shown that there are significant orientation and strain/stress variations between grains and inside individual grains. A polycrystalline film when investigated at the granular (micrometer) level shows a highly mechanically inhomogeneous medium that allows insight into its mesoscopic properties. If the microSXRD data are averaged over a macroscopic range, results show good agreement with direct macroscopic texture and stress measurements.

    View details for DOI 10.1107/S0909049502021362

    View details for Web of Science ID 000181609000004

    View details for PubMedID 12606791

  • Tensile failure by grain thinning in micromachined aluminum thin films JOURNAL OF APPLIED PHYSICS Lee, H. J., Zhang, P., Bravman, J. C. 2003; 93 (3): 1443-1451

    View details for DOI 10.1063/1.1532933

    View details for Web of Science ID 000180630200016

  • Electromigration-induced plastic deformation in passivated metal lines APPLIED PHYSICS LETTERS Valek, B. C., Bravman, J. C., Tamura, N., MacDowell, A. A., Celestre, R. S., Padmore, H. A., Spolenak, R., Brown, W. L., Batterman, B. W., Patel, J. R. 2002; 81 (22): 4168-4170

    View details for DOI 10.1063/1.1525880

    View details for Web of Science ID 000179340800023

  • Effect of interface conditions on yield behavior of passivated copper thin films JOURNAL OF MATERIALS RESEARCH Vinci, R. P., Forrest, S. A., Bravman, J. C. 2002; 17 (7): 1863-1870

    View details for Web of Science ID 000176617300045

  • Subcritical debonding of polymer/silica interfaces under monotonic and cyclic loading Symposium on Computational Thermodynamics and Materials Design Snodgrass, J. M., Pantelidis, D., JENKINS, M. L., Bravman, J. C., Dauskardt, R. H. PERGAMON-ELSEVIER SCIENCE LTD. 2002: 2395–2411

    View details for Web of Science ID 000175797800019

  • High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction APPLIED PHYSICS LETTERS Tamura, N., MacDowell, A. A., Celestre, R. S., Padmore, H. A., Valek, B., Bravman, J. C., Spolenak, R., Brown, W. L., Marieb, T., Fujimoto, H., Batterman, B. W., Patel, J. R. 2002; 80 (20): 3724-3726

    View details for DOI 10.1063/1.1477621

    View details for Web of Science ID 000175564100020

  • Stress-induced and electromigration voiding in aluminum interconnects passivated with silicon nitride JOURNAL OF APPLIED PHYSICS Lee, S. H., Bravman, J. C., Doan, J. C., Lee, S., Flinn, P. A., Marieb, T. N. 2002; 91 (6): 3653-3657

    View details for DOI 10.1063/1.1450034

    View details for Web of Science ID 000174182500025

  • Studies of silane adhesion promoters on silica filler particles for use in microelectronic packaging Symposium on Polymer Interfaces and Thin Films held at the 2001 MRS Fall Meeting Jenkins, M., DeVries, G., Dauskardt, R. H., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 2002: 159–164

    View details for Web of Science ID 000179442800025

  • Formation of titanium silicide on narrow gates using laser thermal processing IEEE TRANSACTIONS ON ELECTRON DEVICES Verma, G., Gelatos, C., Talwar, S., Bravman, J. C. 2002; 49 (1): 42-47

    View details for Web of Science ID 000173338000008

  • Miniature Nernstian oxygen sensor for deposition and growth environments REVIEW OF SCIENTIFIC INSTRUMENTS van Setten, E., Gur, T. M., Blank, D. H., Bravman, J. C., Beasley, M. R. 2002; 73 (1): 156-161

    View details for Web of Science ID 000172906000026

  • Submicron X-ray diffraction 7th International Conference on Synchrotron Radiation Instrumentation (SRI 2000) MacDowell, A. A., Celestre, R. S., Tamura, N., Spolenak, R., Valek, B., Brown, W. L., Bravman, J. C., Padmore, H. A., Batterman, B. W., Patel, J. R. ELSEVIER SCIENCE BV. 2001: 936–943

    View details for Web of Science ID 000171012800026

  • Effects of dielectric materials on electromigration failure JOURNAL OF APPLIED PHYSICS Doan, J. C., Lee, S., Lee, S. H., Flinn, P. A., Bravman, J. C., Marieb, T. N. 2001; 89 (12): 7797-7808

    View details for Web of Science ID 000169183500016

  • Use of angle resolved x-ray photoelectron spectroscopy for determination of depth and thickness of compound layer structures JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Spruytte, S., Coldren, C., Harris, J., Pantelidis, D., Lee, H. J., Bravman, J., Kelly, M. 2001; 19 (2): 603-608

    View details for Web of Science ID 000167591600032

  • Creating process margin in laser thermal processing: Application to formation of titanium silicide APPLIED PHYSICS LETTERS Verma, G., Talwar, S., Bravman, J. C. 2001; 78 (7): 925-927

    View details for Web of Science ID 000166772600025

  • Mechanical tests of free-standing aluminum microbeams for MEMS application Symposium on Mechanical Properties of Structural Films Zhang, P., Lee, H. J., Bravman, J. C. AMERICAN SOCIETY TESTING AND MATERIALS. 2001: 203–213

    View details for Web of Science ID 000172648600015

  • Differential thermal budget in laser processing: Application to formation of titanium silicide IEEE ELECTRON DEVICE LETTERS Verma, G., Talwar, S., Bravman, J. C. 2000; 21 (10): 482-484

    View details for Web of Science ID 000089530200004

  • A high-voltage scanning electron microscopy system for in situ electromigration testing REVIEW OF SCIENTIFIC INSTRUMENTS Doan, J. C., Lee, S., Lee, S. H., Meier, N. E., Bravman, J. C., Flinn, P. A., Marieb, T. N., Madden, M. C. 2000; 71 (7): 2848-2854

    View details for Web of Science ID 000087906800038

  • Stress relaxation of free-standing aluminum beams for microelectromechanical systems applications APPLIED PHYSICS LETTERS Lee, H. J., Cornella, G., Bravman, J. C. 2000; 76 (23): 3415-3417

    View details for Web of Science ID 000087554500027

  • The evolution of the resistance of aluminum interconnects during electromigration MICROELECTRONICS RELIABILITY Doan, J. C., Bravman, J. C., Flinn, P. A., Marieb, T. N. 2000; 40 (6): 981-990

    View details for Web of Science ID 000087640800010

  • Study of crack propagation at an oxide/polymer interface under varying loading conditions Symposium V on Thin Films-Stresses and Mechanical Properties VIII held at the 1999 MRS Fall Meeting Pantelidis, D., Snodgrass, J., Dauskardt, R. H., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 2000: 407–412

    View details for Web of Science ID 000165506400063

  • Void nucleation on intentionally added defects in Al interconnects APPLIED PHYSICS LETTERS Doan, J. C., Lee, S. H., Bravman, J. C., Flinn, P. A., Marieb, T. N. 1999; 75 (5): 633-635

    View details for Web of Science ID 000081644100013

  • The effects of environment and fatigue on the adhesion and subcritical debonding of dielectric polymers Symposium O: Low-Dielectric Constant Materials at the 1999 MRS Spring Meeting Snodgrass, J. M., Pantelidis, D., Bravman, J. C., Dauskardt, R. H. MATERIALS RESEARCH SOCIETY. 1999: 123–128

    View details for Web of Science ID 000085482500016

  • Thin film stress measurement with a tunneling sensor Symposium AA on Materials Science of Microelectromechanical Systems (MEMS) Devices at the 1998 MRS Fall Meeting Zhang, P., Vinci, R. P., Bravman, J. C., Kenny, T. W. MATERIALS RESEARCH SOCIETY. 1999: 45–50

    View details for Web of Science ID 000084260700007

  • Electromigration voiding in argon-implanted interconnects Materials Reliability in Microelectronics IX Symposium at the 1999 MRS Spring Meeting Meier, N. E., Doan, J. C., Marieb, T. N., Flinn, P. A., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1999: 97–102

    View details for Web of Science ID 000083461000016

  • Experimental study of self-diffusion in silicon using isotopically enriched structures Symposium on Si Front-End Processing-Physics and Technology of Dopant-Defect Interactions Ural, A., Griffin, P. B., Plummer, J. D. MATERIALS RESEARCH SOCIETY. 1999: 97–102

    View details for Web of Science ID 000082188100014

  • The relationship between resistance changes and void volume changes in passivated aluminum interconnects 37th Annual IEEE International Reliability Physics Symposium Doan, J. C., Bravman, J. C., Flinn, P. A., Marieb, T. N. IEEE COMPUTER SOC. 1999: 206–212

    View details for Web of Science ID 000079933100031

  • Direct measurement of nucleation times and growth rates of electromigration induced voids 5th International Workshop on Stress Induced Phenomena in Metallization Doan, J. C., Bravman, J. C., Flinn, P. A., Marieb, T. N. AIP PRESS. 1999: 15–26

    View details for Web of Science ID 000084220900002

  • A detailed study of void motion in passivated aluminum interconnects Materials Reliability in Microelectronics IX Symposium at the 1999 MRS Spring Meeting Doan, J. C., Bravman, J. C., Flinn, P. A., Marieb, T. N. MATERIALS RESEARCH SOCIETY. 1999: 103–108

    View details for Web of Science ID 000083461000017

  • Effect of microstructure and chemical bonding on the adhesion strength of a silicon/polymer interface for microelectronic packaging applications Symposium D on Integration of Dissimilar Materials in Micro- and Optoelectronics / Symposium I on III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications, at the 1998 MRS Fall Meeting Pantelidis, D., Lee, H. J., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1999: 165–170

    View details for Web of Science ID 000082590400026

  • Stress-induced and electromigration voiding in nitride passivated Al interconnects 5th International Workshop on Stress Induced Phenomena in Metallization Lee, S. H., Lee, S., Bravman, J. C., Flinn, P. A., Marieb, T. N. AIP PRESS. 1999: 174–179

    View details for Web of Science ID 000084220900016

  • Observations of low cycle fatigue of Al thin films for MEMS applications Symposium on Microelectromechanical Structures for Materials Research Cornella, G., Vinci, R. P., Iyer, R. S., Dauskardt, R. H., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1998: 81–86

    View details for Web of Science ID 000078172100013

  • A quantitative study of void nucleation times in passivated aluminum interconnects Symposium on Materials Reliability in Microelectronics VIII Dean, J. C., Bravman, J. C., Flinn, P. A., Marieb, T. N. MATERIALS RESEARCH SOCIETY. 1998: 83–88

    View details for Web of Science ID 000077688100013

  • Transient diffusion of beryllium and silicon in gallium arsenide ANNUAL REVIEW OF MATERIALS SCIENCE Haddara, Y. M., Bravman, J. C. 1998; 28: 185-214

    View details for Web of Science ID 000075395600010

  • The effects of passivation thickness and initial aluminum line stress on electromigration behavior Symposium on Materials Reliability in Microelectronics VIII Lee, S., Bravman, J. C., Flinn, P. A., Marieb, T. N. MATERIALS RESEARCH SOCIETY. 1998: 249–254

    View details for Web of Science ID 000077688100035

  • Growth of single crystal YIG fibers by the laser heated pedestal growth method Symposium B on Phase Transformations and Systems Driven Far From Equilibrium at the Materials-Research-Society Fall Meeting Lim, H. J., DeMattei, R. C., Feigelson, R. S. MATERIALS RESEARCH SOCIETY. 1998: 83–88

    View details for Web of Science ID 000075555800013

  • Determination of temperature dependent unstressed lattice spacings in crystalline thin films on substrates Symposium on Thin-Films - Stresses and Mechanical Properties VII at the MRS Fall Meeting Cornella, G., Lee, S., Kraft, O., Nix, W. D., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1998: 527–532

    View details for Web of Science ID 000075849800079

  • High voltage scanning electron microscopy for in-situ electromigration studies 14th International Congress on Electron Microscopy Bravman, J. C., Flinn, P. A., Marieb, T. N., Lee, S., Doan, J. IOP PUBLISHING LTD. 1998: 397–398

    View details for Web of Science ID 000077020300191

  • Void phenomena in passivated metal lines: Recent observations and interpretation 4th International Workshop on Stress Induced Phenomena in Metallization Flinn, P. A., Lee, S., Doan, J., Marieb, T. N., Bravman, J. C., Madden, M. AMER INST PHYSICS. 1998: 250–61

    View details for Web of Science ID 000072373200027

  • Comparisons of constraint effects on Al lines under various passivations 4th International Workshop on Stress Induced Phenomena in Metallization Lee, S., Bravman, J. C., Flinn, P. A., Marieb, T. N. AMER INST PHYSICS. 1998: 277–82

    View details for Web of Science ID 000072373200029

  • Comparison of electromigration behavior in passivated aluminum interconnects 4th International Workshop on Stress Induced Phenomena in Metallization Lee, S., Doan, J., Bravman, J. C., Flinn, P. A., Marieb, T. N., Ogawa, S. AMER INST PHYSICS. 1998: 101–6

    View details for Web of Science ID 000072373200012

  • An analysis technique for extraction of thin film stresses from x-ray data APPLIED PHYSICS LETTERS Cornella, G., Lee, S. H., Nix, W. D., Bravman, J. C. 1997; 71 (20): 2949-2951

    View details for Web of Science ID A1997YF67500027

  • Stress and microstructural evolution of LPCVD polysilicon thin films during high temperature annealing Symposium on Thin Films - Structure and Morphology Yu, C. L., Flinn, P. A., Lee, S. H., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1997: 403–408

    View details for Web of Science ID A1997BJ39K00064

  • In-situ stress measurements during dry oxidation of silicon Symposium on Materials Reliability in Microelectronics, at the 1997 MRS Spring Meeting Yu, C. L., Flinn, P. A., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1997: 95–100

    View details for Web of Science ID A1997BJ82V00012

  • Finite element modeling of grain aspect ratio and strain energy density in a textured copper thin film Symposium on Thin Films - Stresses and Mechanical Properties VI, at the 1996 MRS Spring Meeting Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1997: 411–416

    View details for Web of Science ID A1997BH29Z00064

  • Comparison of stresses in Al lines under various passivations Symposium on Materials Reliability in Microelectronics, at the 1997 MRS Spring Meeting Lee, S., Bravman, J. C., Flinn, P. A., Marieb, T. N. MATERIALS RESEARCH SOCIETY. 1997: 415–420

    View details for Web of Science ID A1997BJ82V00057

  • Observation of electromigration voiding in Cu lines Symposium on Materials Reliability in Microelectronics, at the 1997 MRS Spring Meeting Lee, S. H., Bravman, J. C., Flinn, P. A., Arnaud, L. MATERIALS RESEARCH SOCIETY. 1997: 235–239

    View details for Web of Science ID A1997BJ82V00032

  • In-situ measurement of viscous flow of thermal silicon dioxide thin films at high temperature Symposium on Amorphous and Crystalline Insulating Thin Films, at the 1996 MRS Fall Meeting Yu, C. L., Flinn, P. A., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1997: 261–266

    View details for Web of Science ID A1997BH92V00038

  • Effect of encapsulant material on the diffusion of beryllium in molecular beam epitaxy gallium arsenide APPLIED PHYSICS LETTERS Haddara, Y. M., Deal, M. D., Bravman, J. C. 1996; 68 (14): 1939-1941

    View details for Web of Science ID A1996UC48300020

  • Measurement and interpretation of strain relaxation in passivated Al-0.5% Cu lines JOURNAL OF MATERIALS RESEARCH Besser, P. R., Marieb, T. N., Lee, J., Flinn, P. A., Bravman, J. C. 1996; 11 (1): 184-193

    View details for Web of Science ID A1996TQ31200022

  • Modeling the transient diffusion behavior of beryllium in gallium arsenide and the effect of encapsulant material on non-equilibrium point defect populations 4th International Symposium on Process Physics and Modeling in Semiconductor Technology Haddara, Y. M., Deal, M. D., Bravman, J. C. ELECTROCHEMICAL SOCIETY INC. 1996: 142–48

    View details for Web of Science ID A1996BJ91Q00015

  • Finite element modeling of grain aspect ratio and strain energy density in a textured copper thin film Symposium on Materials Reliability in Microelectronics VI, at the 1996 MRS Spring Meeting Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1996: 481–486

    View details for Web of Science ID A1996BG81V00066

  • EFFECTS OF BARRIER LAYER AND PROCESSING CONDITIONS ON THIN-FILM CU MICROSTRUCTURE JOURNAL OF ELECTRONIC MATERIALS ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. 1995; 24 (10): 1485-1492

    View details for Web of Science ID A1995RZ08100023

  • PSEUDO-QUATERNARY PHASE-RELATIONS NEAR BI2SR2CACU2O8+X IN REDUCED OXYGEN PRESSURES PHYSICA C MACMANUSDRISCOLL, J. L., Bravman, J. C., Beyers, R. B. 1995; 251 (1-2): 71-88

    View details for Web of Science ID A1995RU86100007

  • THE INFLUENCE OF STRAIN-ENERGY ON ABNORMAL GRAIN-GROWTH IN COPPER THIN-FILMS APPLIED PHYSICS LETTERS ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. 1995; 67 (8): 1078-1080

    View details for Web of Science ID A1995RQ00200012

  • OBSERVATIONS OF ELECTROMIGRATION-INDUCED VOID NUCLEATION AND GROWTH IN POLYCRYSTALLINE AND NEAR-BAMBOO PASSIVATED AL LINES JOURNAL OF APPLIED PHYSICS Marieb, T., Flinn, P., Bravman, J. C., Gardner, D., Madden, M. 1995; 78 (2): 1026-1032

    View details for Web of Science ID A1995RH81900053

  • THERMAL STRAIN AND STRESS IN COPPER THIN-FILMS THIN SOLID FILMS Vinci, R. P., ZIELINSKI, E. M., Bravman, J. C. 1995; 262 (1-2): 142-153

    View details for Web of Science ID A1995RJ84200020

  • TRANSPORT CHARACTERIZATION OF CALCIUM-DOPED YBA2CU3O7-DELTA THIN-FILMS PHYSICAL REVIEW B KUCERA, J. T., Bravman, J. C. 1995; 51 (13): 8582-8590

    View details for Web of Science ID A1995QR97800066

  • MODELING DIFFUSION IN GALLIUM-ARSENIDE - RECENT WORK MRS BULLETIN Haddara, Y. M., Lee, C. C., Hu, J. C., Deal, M. D., Bravman, J. C. 1995; 20 (4): 41-50

    View details for Web of Science ID A1995QT77500013

  • DIFFUSION OF IMPLANTED BE IN ALXGA1-XAS AS A FUNCTION OF AL CONCENTRATION AND ANNEAL TEMPERATURE APPLIED PHYSICS LETTERS Lee, C. C., Deal, M. D., Bravman, J. C. 1995; 66 (3): 355-357

    View details for Web of Science ID A1995QC06000036

  • PHASE-EQUILIBRIA IN THE Y-BA-CU-O SYSTEM AND MELT PROCESSING OF AG CLAD Y1BA2CU3O7-X TAPES AT REDUCED OXYGEN PARTIAL PRESSURES PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS MACMANUSDRISCOLL, J. L., Bravman, J. C., Beyers, R. B. 1995; 241 (3-4): 401-413

    View details for Web of Science ID A1995QE30500024

  • The influence of strain energy minimization on abnormal grain growth in copper thin films 5th Symposium on Materials Reliability in Microelectronics, at the 1995 MRS Spring Meeting ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOC. 1995: 103–108

    View details for Web of Science ID A1995BE31N00013

  • Measurement of the dependence of stress and strain on crystallographic orientation in Cu and Al thin films Symposium on Thin Films - Stresses and Mechanical Properties V, at the 1994 Fall Meeting of the Materials-Research-Society ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1995: 429–434

    View details for Web of Science ID A1995BD53A00066

  • The effects of processing on the microstructure of copper thin films on tantalum barrier layers 5th Symposium on Materials Reliability in Microelectronics, at the 1995 MRS Spring Meeting ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOC. 1995: 303–308

    View details for Web of Science ID A1995BE31N00039

  • A simple analysis of average mechanical behaviour and strain energy density of misoriented grains in a textured film 5th Symposium on Materials Reliability in Microelectronics, at the 1995 MRS Spring Meeting Vinci, R. P., Weihs, T. P., ZIELINSKI, E. M., Barbee, T. W., Bravman, J. C. MATERIALS RESEARCH SOC. 1995: 97–102

    View details for Web of Science ID A1995BE31N00012

  • Effect of copper film thickness on stress and strain in grains of different orientation Symposium on Thin Films - Stresses and Mechanical Properties V, at the 1994 Fall Meeting of the Materials-Research-Society Vinci, R. P., ZIELINSKI, E. M., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1995: 459–464

    View details for Web of Science ID A1995BD53A00071

  • PHASE-EQUILIBRIA AND MELT PROCESSING OF BI2SR2CA1CU2O8+X TAPES AT REDUCED OXYGEN PARTIAL PRESSURES APPLIED PHYSICS LETTERS MACMANUSDRISCOLL, J. L., Wang, P. C., Bravman, J. C., Beyers, R. B. 1994; 65 (22): 2872-2874

    View details for Web of Science ID A1994PU40400039

  • STUDIES OF STRUCTURAL DISORDER IN REBA2CU3O7-X THIN-FILMS (RE = RARE-EARTH) AS A FUNCTION OF RARE-EARTH IONIC RADIUS AND FILM DEPOSITION CONDITIONS PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS MACMANUSDRISCOLL, J. L., Alonso, J. A., Wang, P. C., Geballe, T. H., Bravman, J. C. 1994; 232 (3-4): 288-308

    View details for Web of Science ID A1994PQ57200012

  • EFFECTS OF BARRIER LAYER AND ANNEALING ON ABNORMAL GRAIN-GROWTH IN COPPER THIN-FILMS JOURNAL OF APPLIED PHYSICS ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. 1994; 76 (8): 4516-4522

    View details for Web of Science ID A1994PM73100007

  • EFFECTS OF SILVER AND LEAD ON THE PHASE-STABILITY OF BI2SR2CA1CU2O8+X AND BI2SR2CA2CU3B10+X ABOVE AND BELOW THE SOLIDUS TEMPERATURE JOURNAL OF THE AMERICAN CERAMIC SOCIETY MACMANUSDRISCOLL, J. L., Bravman, J. C., SAVOY, R. J., Gorman, G., Beyers, R. B. 1994; 77 (9): 2305-2313

    View details for Web of Science ID A1994PH19900009

  • EFFECT OF ION ENERGY ON THE DIFFUSION OF SI IMPLANTED INTO GAAS Meeting of the Electrochemical-Society Lee, C. C., Deal, M. D., Jones, K. S., Robinson, H. G., Bravman, J. C. ELECTROCHEMICAL SOC INC. 1994: 2245–49

    View details for Web of Science ID A1994PA46300056

  • ELIMINATING DOPANT DIFFUSION AFTER ION-IMPLANTATION BY SURFACE ETCHING APPLIED PHYSICS LETTERS Lee, C. C., Deal, M. D., Bravman, J. 1994; 64 (24): 3302-3304

    View details for Web of Science ID A1994NQ97900034

  • OBSERVATION OF VOIDS INDUCED BY MECHANICAL-STRESS AND ELECTROMIGRATION IN PASSIVATED AL LINES DEPOSITED AT DIFFERENT PURITY LEVELS APPLIED PHYSICS LETTERS Marieb, T., Bravman, J. C., Flinn, P., Gardner, D. S., Madden, M. 1994; 64 (18): 2424-2426

    View details for Web of Science ID A1994NK02600033

  • ELASTIC STRAIN GRADIENTS AND X-RAY-LINE BROADENING EFFECTS AS A FUNCTION OF TEMPERATURE IN ALUMINUM THIN-FILMS ON SILICON JOURNAL OF MATERIALS RESEARCH Venkatraman, R., Besser, P. R., Bravman, J. C., Brennan, S. 1994; 9 (2): 328-335

    View details for Web of Science ID A1994MW11200013

  • AN X-RAY-METHOD FOR DIRECT DETERMINATION OF THE STRAIN STATE AND STRAIN RELAXATION IN MICRON-SCALE PASSIVATED METALLIZATION LINES DURING THERMAL CYCLING JOURNAL OF MATERIALS RESEARCH Besser, P. R., Brennan, S., Bravman, J. C. 1994; 9 (1): 13-24

    View details for Web of Science ID A1994MW11100004

  • MICROSTRUCTURAL CHARACTERIZATION OF COPPER THIN-FILMS ON METALLIC UNDERLAYERS 4th Symposium on Materials Reliability in Microelectronics, at the 1994 MRS Spring Meeting ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOC. 1994: 307–312

    View details for Web of Science ID A1994BB63S00040

  • THERMAL-STRESSES IN PASSIVATED COPPER INTERCONNECTS DETERMINED BY X-RAY-ANALYSIS AND FINITE-ELEMENT MODELING 4th Symposium on Materials Reliability in Microelectronics, at the 1994 MRS Spring Meeting Vinci, R. P., ZIELINSKI, E. M., Bravman, J. C. MATERIALS RESEARCH SOC. 1994: 289–294

    View details for Web of Science ID A1994BB63S00037

  • UNDERSTANDING AND ELECTROCHEMICAL CONTROL OF YBA2CU3O7-X THIN-FILM EPITAXY ON YTTRIUM STABILIZED ZIRCONIA JOURNAL OF APPLIED PHYSICS MACMANUSDRISCOLL, J., Geballe, T. H., Bravman, J. C. 1994; 75 (1): 412-422

    View details for Web of Science ID A1994MQ40200060

  • X-RAY DETERMINATION OF STRAINS, STRESS, AND RELAXATION IN INTERCONNECT METALLIZATIONS 2nd International Workshop on Stress-Induced Phenomena in Metallization Besser, P. R., Bravman, J. C. AIP PRESS. 1994: 46–61

    View details for Web of Science ID A1994BA55T00004

  • IN-SITU OBSERVATIONS OF VOIDING IN METAL LINES UNDER PASSIVATION 4th Symposium on Materials Reliability in Microelectronics, at the 1994 MRS Spring Meeting Marieb, T., Bravman, J. C., Flinn, P., Madden, M. MATERIALS RESEARCH SOC. 1994: 409–413

    View details for Web of Science ID A1994BB63S00053

  • DIRECT OBSERVATION OF THE GROWTH AND MOVEMENT OF ELECTROMIGRATION VOIDS UNDER PASSIVATION 2nd International Workshop on Stress-Induced Phenomena in Metallization Marieb, T. N., ABRATOWSKI, E., Bravman, J. C., Madden, M., Flinn, P. AIP PRESS. 1994: 1–14

    View details for Web of Science ID A1994BA55T00001

  • FINITE-ELEMENT MODELING AND X-RAY-MEASUREMENT OF STRAIN IN PASSIVATED AL LINES DURING THERMAL CYCLING JOURNAL OF THE ELECTROCHEMICAL SOCIETY Besser, P. R., Mack, A. S., Fraser, D. B., Bravman, J. C. 1993; 140 (6): 1769-1772

    View details for Web of Science ID A1993LG41000053

  • NUCLEATION AND GROWTH MECHANISMS OF A,B-AXIS-ORIENTED YBA2CU3O7-DELTA FILMS ON LAALO3 PHYSICAL REVIEW B Streiffer, S. K., Lairson, B. M., ZIELINSKI, E. M., Bravman, J. C. 1993; 47 (17): 11431-11438

    View details for Web of Science ID A1993LC51400053

  • DISPERSION STRENGTHENING OF AL FILMS BY OXYGEN-ION IMPLANTATION SYMP ON MATERIALS RELIABILITY IN MICROELECTRONICS 3 Bader, S., Flinn, P. A., Arzt, E., Nix, W. D. MATERIALS RESEARCH SOC. 1993: 249–254

    View details for Web of Science ID A1993BY84P00033

  • STRESS IN COPPER THIN-FILMS WITH BARRIER LAYERS Symposium on Thin Films: Stresses and Mechanical Properties IV, at the 1993 Spring Meeting of the Materials-Research-Society Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOC. 1993: 337–341

    View details for Web of Science ID A1993BZ55E00050

  • NONDESTRUCTIVE EVALUATION OF STRAINS AND VOIDING IN PASSIVATED COPPER METALLIZATIONS Symposium on Thin Films: Stresses and Mechanical Properties IV, at the 1993 Spring Meeting of the Materials-Research-Society Vinci, R. P., Marieb, T. N., Bravman, J. C. MATERIALS RESEARCH SOC. 1993: 297–302

    View details for Web of Science ID A1993BZ55E00045

  • STRESS GRADIENT AND RELAXATION MEASUREMENTS IN AL AND OXYGEN-IMPLANTED AL FILMS Symposium on Thin Films: Stresses and Mechanical Properties IV, at the 1993 Spring Meeting of the Materials-Research-Society Besser, P. R., Bader, S., Venkatraman, R., Bravman, J. C. MATERIALS RESEARCH SOC. 1993: 323–328

    View details for Web of Science ID A1993BZ55E00048

  • STRAIN RELAXATION AND IN-SITU OBSERVATION OF VOIDING IN PASSIVATED ALUMINUM-ALLOY LINES Symposium on Thin Films: Stresses and Mechanical Properties IV, at the 1993 Spring Meeting of the Materials-Research-Society Besser, P. R., Marieb, T. N., Bravman, J. C. MATERIALS RESEARCH SOC. 1993: 249–254

    View details for Web of Science ID A1993BZ55E00038

  • SEPARATION OF FILM THICKNESS AND GRAIN-BOUNDARY STRENGTHENING EFFECTS IN AL THIN-FILMS ON SI JOURNAL OF MATERIALS RESEARCH Venkatraman, R., Bravman, J. C. 1992; 7 (8): 2040-2048

    View details for Web of Science ID A1992JH82300014

  • LIMITS ON THE USE OF TUNNELING TO DESCRIBE THE PD-GE OHMIC CONTACT TO GAAS 38TH NATIONAL SYMP OF THE AMERICAN VACUUM SOC HERRERAGOMEZ, A., Meissner, P. L., Bravman, J. C., SPICER, W. E. A V S AMER INST PHYSICS. 1992: 1029–34

    View details for Web of Science ID A1992JE68100084

  • CRITICAL CURRENTS AND MAGNETIZATION DECAY IN OXYGEN DEFICIENT YBA2CU3O7-DELTA THIN-FILMS INTERNATIONAL CONF ON MATERIALS AND MECHANISMS OF SUPERCONDUCTIVITY HIGH TEMPERATURE SUPERCONDUCTORS 3 Lairson, B. M., Vargas, J. L., Streiffer, S. K., Larbalestier, D. C., Bravman, J. C. ELSEVIER SCIENCE BV. 1991: 2161–2162

    View details for Web of Science ID A1991GX30900014

  • INITIAL CONDITIONS IN MAGNETIZATION DECAY OF HIGH-TC SUPERCONDUCTING THIN-FILMS INTERNATIONAL CONF ON MATERIALS AND MECHANISMS OF SUPERCONDUCTIVITY HIGH TEMPERATURE SUPERCONDUCTORS 3 Lairson, B. M., Sun, J. Z., Geballe, T. H., Bravman, J. C. ELSEVIER SCIENCE BV. 1991: 2519–2520

    View details for Web of Science ID A1991GX30900193

  • THE EFFECT OF LASER REFLOW ON THE VARIATION OF STRESS WITH THERMAL CYCLING IN ALUMINUM THIN-FILMS TOPICAL CONF ON THE MECHANICAL BEHAVIOR OF THIN FILMS / 37TH ANNUAL SYMP OF THE AMERICAN VACUUM SOC Venkatraman, R., Chen, S., Bravman, J. C. A V S AMER INST PHYSICS. 1991: 2536–42

    View details for Web of Science ID A1991FV99500083

  • MICROSTRUCTURE OF ULTRATHIN FILMS OF YBA2CU3O7-DELTA ON MGO PHYSICAL REVIEW B Streiffer, S. K., Lairson, B. M., Eom, C. B., Clemens, B. M., Bravman, J. C., Geballe, T. H. 1991; 43 (16): 13007-13018

    View details for Web of Science ID A1991FP63100039

  • OXIDATION-KINETICS OF YBA2CU3O7-X THIN-FILMS IN THE PRESENCE OF ATOMIC OXYGEN AND MOLECULAR-OXYGEN BY INSITU RESISTIVITY MEASUREMENTS JOURNAL OF APPLIED PHYSICS Yamamoto, K., Lairson, B. M., Bravman, J. C., Geballe, T. H. 1991; 69 (10): 7189-7201

    View details for Web of Science ID A1991FM77100055

  • THICKNESS DEPENDENCE OF THE TWIN DENSITY IN YBA2CU3O7-DELTA THIN-FILMS SPUTTERED ONTO MGO SUBSTRATES APPLIED PHYSICS LETTERS Streiffer, S. K., ZIELINSKI, E. M., Lairson, B. M., Bravman, J. C. 1991; 58 (19): 2171-2173

    View details for Web of Science ID A1991FL31700040

  • THERMAL-ACTIVATION OF VORTEX MOTION IN YBA2CU3O7-DELTA FILMS AT LOW-TEMPERATURES PHYSICAL REVIEW B Lairson, B. M., Sun, J. Z., Geballe, T. H., Beasley, M. R., Bravman, J. C. 1991; 43 (13): 10405-10412

    View details for Web of Science ID A1991FL03900045

  • MAGNETIC-RELAXATION, CURRENT-VOLTAGE CHARACTERISTICS, AND POSSIBLE DISSIPATION MECHANISMS FOR HIGH-TC SUPERCONDUCTING THIN-FILMS OF Y-BA-CU-O PHYSICAL REVIEW B Sun, J. Z., Eom, C. B., LAIRSON, B., Bravman, J. C., Geballe, T. H. 1991; 43 (4): 3002-3008

    View details for Web of Science ID A1991FF08300067

  • ROLE OF ATOMIC OXYGEN PRODUCED BY ECR PLASMA IN THE OXIDATION OF YBA2CU3O7-X THIN-FILMS STUDIED BY INSITU RESISTIVITY MEASUREMENT SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY Yamamoto, K., Lairson, B. M., Eom, C. B., Hammond, R. H., Bravman, J. C., Geballe, T. H. IOP PUBLISHING LTD. 1991: S382–S384

    View details for Web of Science ID A1991FA42000114

  • GROWTH OF YBA2CU3O7-DELTA ON VICINALLY POLISHED MGO SUBSTRATES APPLIED PHYSICS LETTERS Streiffer, S. K., Lairson, B. M., Bravman, J. C. 1990; 57 (23): 2501-2503

    View details for Web of Science ID A1990EK72600038

  • VORTEX PINNING AND TWIN BOUNDARIES IN YBA2CU3O7-DELTA THIN-FILMS PHYSICAL REVIEW B Lairson, B. M., Streiffer, S. K., Bravman, J. C. 1990; 42 (16): 10067-10074

    View details for Web of Science ID A1990EK80500038

  • MECHANICAL-PROPERTIES AND MICROSTRUCTURAL CHARACTERIZATION OF AL-0.5-PERCENT CU THIN-FILMS SYMP AT THE 1990 ANNUAL MEETING OF THE METALLURGICAL SOC : METALLIZATIONS FOR ELECTRONICS APPLICATIONS Venkatraman, R., Bravman, J. C., Nix, W. D., Davies, P. W., Flinn, P. A., Fraser, D. B. MINERALS METALS MATERIALS SOC. 1990: 1231–37

    View details for Web of Science ID A1990EN80100012

  • SYNTHESIS AND PROPERTIES OF YBA2CU3O7 THIN-FILMS GROWN INSITU BY 90-DEGREES OFF-AXIS SINGLE MAGNETRON SPUTTERING PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS Eom, C. B., Sun, J. Z., Lairson, B. M., Streiffer, S. K., Marshall, A. F., Yamamoto, K., Anlage, S. M., Bravman, J. C., Geballe, T. H. 1990; 171 (3-4): 354-382

    View details for Web of Science ID A1990EH99500023

  • ROLE OF ATOMIC OXYGEN PRODUCED BY AN ELECTRON-CYCLOTRON RESONANCE PLASMA IN THE OXIDATION OF YBA2CU3O7-X THIN-FILMS STUDIED BY INSITU RESISTIVITY MEASUREMENT APPLIED PHYSICS LETTERS Yamamoto, K., Lairson, B. M., Eom, C. B., Hammond, R. H., Bravman, J. C., Geballe, T. H. 1990; 57 (18): 1936-1938

    View details for Web of Science ID A1990EF48900035

  • MEASURING STIFFNESSES AND RESIDUAL-STRESSES OF SILICON-NITRIDE THIN-FILMS 1989 FALL MEETING OF THE METALLURGICAL SOC : DEFORMATION IN ELECTRONIC MATERIALS AND DEVICES Hong, S., Weihs, T. P., Bravman, J. C., Nix, W. D. MINERALS METALS MATERIALS SOC. 1990: 903–9

    View details for Web of Science ID A1990EB65800008

  • MOLECULAR-BEAM EPITAXIAL-GROWTH OF LAYERED BI-SR-CA-CU-O COMPOUNDS JOURNAL OF CRYSTAL GROWTH Schlom, D. G., Marshall, A. F., SIZEMORE, J. T., Chen, Z. J., Eckstein, J. N., Bozovic, I., VONDESSONNECK, K. E., Harris, J. S., Bravman, J. C. 1990; 102 (3): 361-375

    View details for Web of Science ID A1990DL33400001

  • MICROWAVE PROPERTIES OF HIGHLY ORIENTED YBA2CU3O7-X THIN-FILMS APPLIED PHYSICS LETTERS Inam, A., Wu, X. D., Nazar, L., Hegde, M. S., Rogers, C. T., Venkatesan, T., Simon, R. W., Daly, K., Padamsee, H., Kirchgessner, J., Moffat, D., Rubin, D., Shu, Q. S., KALOKITIS, D., Fathy, A., Pendrick, V., Brown, R., Brycki, B., BELOHOUBEK, E., DRABECK, L., Gruner, G., Hammond, R., GAMBLE, F., Lairson, B. M., Bravman, J. C. 1990; 56 (12): 1178-1180

    View details for Web of Science ID A1990CV17800033

  • ELIMINATION OF CURRENT DISSIPATION IN HIGH TRANSITION-TEMPERATURE SUPERCONDUCTORS SCIENCE Sun, J. Z., LAIRSON, B., Eom, C. B., Bravman, J., Geballe, T. H. 1990; 247 (4940): 307-309

    Abstract

    The relaxation of the shielding current-induced magnetic moment in YBa(2)Cu(3)O(7) thin films, which were grown in situ, is studied as a function of temperature. Although typical relaxations cause a large amount of decay in the magnetic shielding current (on the order of 10 to 20 percent for the first 1000 seconds), it is shown that this is not necessarily a serious problem for applications such as magnets operating in persistent-current modes. This is because the decay of the magnetic shielding current depends sensitively on how far away the operating current density is from the critical current density J(c). By using a quenching process the shielding current is reduced slightly below J(c) and the relaxation is dramatically reduced. A general relation between the relaxation rate at J(c) and the reduction of the relaxation rate upon lowering of the operating current is obtained and is shown to be consistent with experimental data.

    View details for Web of Science ID A1990CJ66900030

    View details for PubMedID 17735848

  • VORTEX MOTION AND TIME-DEPENDENT MAGNETIC RESPONSES IN HIGH-TC SUPERCONDUCTORS INTERNATIONAL CONF ON MATERIALS AND MECHANISMS OF SUPERCONDUCTIVITY : HIGH TEMPERATURE SUPERCONDUCTORS 2 Sun, J. Z., Eom, C. B., LAIRSON, B., Bravman, J. C., Geballe, T. H., Kapitulnik, A. ELSEVIER SCIENCE BV. 1989: 687–688

    View details for Web of Science ID A1989CG48900320

  • PHASE CHARACTERIZATION OF DYSPROSIUM BARIUM COPPER-OXIDE THIN-FILMS GROWN ON STRONTIUM-TITANATE BY MOLECULAR-BEAM EPITAXY JOURNAL OF MATERIALS RESEARCH Hellman, E. S., Schlom, D. G., Marshall, A. F., Streiffer, S. K., Harris, J. S., Beasley, M. R., Bravman, J. C., Geballe, T. H., Eckstein, J. N., Webb, C. 1989; 4 (3): 476-495

    View details for Web of Science ID A1989U609200004

  • DETERMINATION OF HIGH-FIELD-ENHANCED EMISSION RATES WITH THE CONSTANT CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE JOURNAL OF APPLIED PHYSICS Chang, M. B., Tomokage, H., SHIAU, J. J., BUBE, R. H., Bravman, J. C. 1989; 65 (7): 2734-2738

    View details for Web of Science ID A1989T678000025

  • MICROSTRUCTURAL CHARACTERIZATION OF YBA2CU3O7-DELTA THIN-FILMS ON SRTIO3 USING 4-AXIS X-RAY-DIFFRACTION IEEE TRANSACTIONS ON MAGNETICS Sizemore, J., Barton, R., Marshall, A., Bravman, J. C., Naito, M., Char, K. 1989; 25 (2): 2245-2249

    View details for Web of Science ID A1989T670600368

  • MOLECULAR-BEAM EPITAXY OF LAYERED DY-BA-CU-O COMPOUNDS APPLIED PHYSICS LETTERS Schlom, D. G., Eckstein, J. N., Hellman, E. S., Streiffer, S. K., Harris, J. S., Beasley, M. R., Bravman, J. C., Geballe, T. H., Webb, C., VONDESSONNECK, K. E., Turner, F. 1988; 53 (17): 1660-1662

    View details for Web of Science ID A1988Q621100030

  • MECHANICAL DEFLECTION OF CANTILEVER MICROBEAMS - A NEW TECHNIQUE FOR TESTING THE MECHANICAL-PROPERTIES OF THIN-FILMS JOURNAL OF MATERIALS RESEARCH Weihs, T. P., Hong, S., Bravman, J. C., Nix, W. D. 1988; 3 (5): 931-942

    View details for Web of Science ID A1988Q239800021

  • OBSERVATIONS OF BETA-TUNGSTEN DEPOSITED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION APPLIED PHYSICS LETTERS Paine, D. C., Bravman, J. C., Yang, C. Y. 1987; 50 (9): 498-500

    View details for Web of Science ID A1987G517200006

  • STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF LPCVD TUNGSTEN CONTACTS TO SILICON INSTITUTE OF PHYSICS CONFERENCE SERIES Paine, D. C., Bravman, J. C. 1987: 547-552

    View details for Web of Science ID A1987AE30700088

  • PHYSICS, TECHNOLOGY, AND MODELING OF POLYSILICON EMITTER CONTACTS FOR VLSI BIPOLAR-TRANSISTORS IEEE TRANSACTIONS ON ELECTRON DEVICES PATTON, G. L., Bravman, J. C., Plummer, J. D. 1986; 33 (11): 1754-1768

    View details for Web of Science ID A1986E351000019

  • DAMAGE CALCULATION AND MEASUREMENT FOR GAAS AMORPHIZED BY SI IMPLANTATION APPLIED PHYSICS LETTERS OPYD, W. G., Gibbons, J. F., Bravman, J. C., Parker, M. A. 1986; 49 (15): 974-976

    View details for Web of Science ID A1986E356700023

  • STRUCTURE AND MORPHOLOGY OF POLYCRYSTALLINE SILICON-SINGLE CRYSTAL SILICON INTERFACES JOURNAL OF APPLIED PHYSICS Bravman, J. C., PATTON, G. L., Plummer, J. D. 1985; 57 (8): 2779-2782

    View details for Web of Science ID A1985AHS7300014

  • THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE Bravman, J. C., Sinclair, R. 1984; 1 (1): 53-61

    View details for Web of Science ID A1984TF93600005

  • TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THE POLYCRYSTALLINE SILICON-SIO2 INTERFACE THIN SOLID FILMS Bravman, J. C., Sinclair, R. 1983; 104 (1-2): 153-161

    View details for Web of Science ID A1983QZ36100017

  • OBSERVATION OF RAPID FIELD AIDED DIFFUSION OF SILVER IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES APPLIED PHYSICS LETTERS MCBRAYER, J. D., Swanson, R. M., Sigmon, T. W., Bravman, J. 1983; 43 (7): 653-654

    View details for Web of Science ID A1983RH65700014