Bio


https://www.bucknell.edu/meet-bucknell/bucknell-leadership/meet-president-bravman

Academic Appointments


Administrative Appointments


  • President, Bucknell University (2010 - Present)

All Publications


  • Stress relaxation in free-standing aluminum beams THIN SOLID FILMS Lee, H. J., Zhang, P., Bravman, J. C. 2005; 476 (1): 118-124
  • White beam analysis of coupling between precipitation and plastic deformation during electromigration in a passivated Al(0.5wt.% Cu) interconnect METALLOFIZIKA I NOVEISHIE TEKHNOLOGII Barabash, R. I., Ice, G. E., Tamura, N., Valek, B. C., Bravman, J. C., Patel, J. R. 2005; 27 (1): 75-94
  • Quantitative characterization of electromigration-induced plastic deformation in Al(0.5wt%Cu) interconnect Symposium on Characterization and Mechanical Reliability of Advanced Electronic Materials at Nanoscale Barabash, R. I., Ice, G. E., Tamura, N., Valek, B. C., Bravman, J. C., Spolenak, R., Patel, J. R. ELSEVIER SCIENCE BV. 2004: 24–30
  • Study on the strength and elongation of free-standing Al beams for microelectromechanical systems applications APPLIED PHYSICS LETTERS Lee, H. J., Zhang, P., Bravman, J. C. 2004; 84 (6): 915-917

    View details for DOI 10.1063/1.1646765

    View details for Web of Science ID 000188763800027

  • Important factors for silane adhesion promoter efficacy: surface coverage, functionality and chain length JOURNAL OF ADHESION SCIENCE AND TECHNOLOGY JENKINS, M. L., Dauskardt, R. H., Bravman, J. C. 2004; 18 (13): 1497-1516
  • Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu) interconnect JOURNAL OF APPLIED PHYSICS Barabash, R. I., Ice, G. E., Tamura, N., Valek, B. C., Bravman, J. C., Spolenak, R., Patel, J. R. 2003; 93 (9): 5701-5706

    View details for DOI 10.1063/1.1563033

    View details for Web of Science ID 000182296700108

  • Local plasticity of Al thin films as revealed by X-ray microdiffraction PHYSICAL REVIEW LETTERS Spolenak, R., Brown, W. L., Tamura, N., MacDowell, A. A., Celestre, R. S., Padmore, H. A., Valek, B., Bravman, J. C., Marieb, T., Fujimoto, H., Batterman, B. W., Patel, J. R. 2003; 90 (9)

    Abstract

    Grain-to-grain interactions dominate the plasticity of Al thin films and establish effective length scales smaller than the grain size. We have measured large strain distributions and their changes under plastic strain in 1.5-microm-thick Al 0.5% Cu films using a 0.8-microm-diameter white x-ray probe at the Advanced Light Source. Strain distributions arise not only from the distribution of grain sizes and orientation, but also from the differences in grain shape and from stress environment. Multiple active glide plane domains have been found within single grains. Large grains behave like multiple smaller grains even before a dislocation substructure can evolve.

    View details for DOI 10.1103/PhysRevLett.90.096102

    View details for Web of Science ID 000181443300036

    View details for PubMedID 12689241

  • Scanning X-ray microdiffraction with submicrometer white beam for strain/stress and orientation mapping in thin films JOURNAL OF SYNCHROTRON RADIATION Tamura, N., MacDowell, A. A., Spolenak, R., Valek, B. C., Bravman, J. C., Brown, W. L., Celestre, R. S., Padmore, H. A., Batterman, B. W., Patel, J. R. 2003; 10: 137-143

    Abstract

    Scanning X-ray microdiffraction (microSXRD) combines the use of high-brilliance synchrotron sources with the latest achromatic X-ray focusing optics and fast large-area two-dimensional-detector technology. Using white beams or a combination of white and monochromatic beams, this technique allows for the orientation and strain/stress mapping of polycrystalline thin films with submicrometer spatial resolution. The technique is described in detail as applied to the study of thin aluminium and copper blanket films and lines following electromigration testing and/or thermal cycling experiments. It is shown that there are significant orientation and strain/stress variations between grains and inside individual grains. A polycrystalline film when investigated at the granular (micrometer) level shows a highly mechanically inhomogeneous medium that allows insight into its mesoscopic properties. If the microSXRD data are averaged over a macroscopic range, results show good agreement with direct macroscopic texture and stress measurements.

    View details for DOI 10.1107/S0909049502021362

    View details for Web of Science ID 000181609000004

    View details for PubMedID 12606791

  • Tensile failure by grain thinning in micromachined aluminum thin films JOURNAL OF APPLIED PHYSICS Lee, H. J., Zhang, P., Bravman, J. C. 2003; 93 (3): 1443-1451

    View details for DOI 10.1063/1.1532933

    View details for Web of Science ID 000180630200016

  • Electromigration-induced plastic deformation in passivated metal lines APPLIED PHYSICS LETTERS Valek, B. C., Bravman, J. C., Tamura, N., MacDowell, A. A., Celestre, R. S., Padmore, H. A., Spolenak, R., Brown, W. L., Batterman, B. W., Patel, J. R. 2002; 81 (22): 4168-4170

    View details for DOI 10.1063/1.1525880

    View details for Web of Science ID 000179340800023

  • Effect of interface conditions on yield behavior of passivated copper thin films JOURNAL OF MATERIALS RESEARCH Vinci, R. P., Forrest, S. A., Bravman, J. C. 2002; 17 (7): 1863-1870
  • Subcritical debonding of polymer/silica interfaces under monotonic and cyclic loading Symposium on Computational Thermodynamics and Materials Design Snodgrass, J. M., Pantelidis, D., JENKINS, M. L., Bravman, J. C., Dauskardt, R. H. PERGAMON-ELSEVIER SCIENCE LTD. 2002: 2395–2411
  • High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction APPLIED PHYSICS LETTERS Tamura, N., MacDowell, A. A., Celestre, R. S., Padmore, H. A., Valek, B., Bravman, J. C., Spolenak, R., Brown, W. L., Marieb, T., Fujimoto, H., Batterman, B. W., Patel, J. R. 2002; 80 (20): 3724-3726

    View details for DOI 10.1063/1.1477621

    View details for Web of Science ID 000175564100020

  • Stress-induced and electromigration voiding in aluminum interconnects passivated with silicon nitride JOURNAL OF APPLIED PHYSICS Lee, S. H., Bravman, J. C., Doan, J. C., Lee, S., Flinn, P. A., Marieb, T. N. 2002; 91 (6): 3653-3657

    View details for DOI 10.1063/1.1450034

    View details for Web of Science ID 000174182500025

  • Studies of silane adhesion promoters on silica filler particles for use in microelectronic packaging Symposium on Polymer Interfaces and Thin Films held at the 2001 MRS Fall Meeting Jenkins, M., DeVries, G., Dauskardt, R. H., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 2002: 159–164
  • Formation of titanium silicide on narrow gates using laser thermal processing IEEE TRANSACTIONS ON ELECTRON DEVICES Verma, G., Gelatos, C., Talwar, S., Bravman, J. C. 2002; 49 (1): 42-47
  • Miniature Nernstian oxygen sensor for deposition and growth environments REVIEW OF SCIENTIFIC INSTRUMENTS van Setten, E., Gur, T. M., Blank, D. H., Bravman, J. C., Beasley, M. R. 2002; 73 (1): 156-161
  • Submicron X-ray diffraction 7th International Conference on Synchrotron Radiation Instrumentation (SRI 2000) MacDowell, A. A., Celestre, R. S., Tamura, N., Spolenak, R., Valek, B., Brown, W. L., Bravman, J. C., Padmore, H. A., Batterman, B. W., Patel, J. R. ELSEVIER SCIENCE BV. 2001: 936–943
  • Effects of dielectric materials on electromigration failure JOURNAL OF APPLIED PHYSICS Doan, J. C., Lee, S., Lee, S. H., Flinn, P. A., Bravman, J. C., Marieb, T. N. 2001; 89 (12): 7797-7808
  • Use of angle resolved x-ray photoelectron spectroscopy for determination of depth and thickness of compound layer structures JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Spruytte, S., Coldren, C., Harris, J., Pantelidis, D., Lee, H. J., Bravman, J., Kelly, M. 2001; 19 (2): 603-608
  • Creating process margin in laser thermal processing: Application to formation of titanium silicide APPLIED PHYSICS LETTERS Verma, G., Talwar, S., Bravman, J. C. 2001; 78 (7): 925-927
  • Mechanical tests of free-standing aluminum microbeams for MEMS application Symposium on Mechanical Properties of Structural Films Zhang, P., Lee, H. J., Bravman, J. C. AMERICAN SOCIETY TESTING AND MATERIALS. 2001: 203–213
  • Differential thermal budget in laser processing: Application to formation of titanium silicide IEEE ELECTRON DEVICE LETTERS Verma, G., Talwar, S., Bravman, J. C. 2000; 21 (10): 482-484
  • A high-voltage scanning electron microscopy system for in situ electromigration testing REVIEW OF SCIENTIFIC INSTRUMENTS Doan, J. C., Lee, S., Lee, S. H., Meier, N. E., Bravman, J. C., Flinn, P. A., Marieb, T. N., Madden, M. C. 2000; 71 (7): 2848-2854
  • Stress relaxation of free-standing aluminum beams for microelectromechanical systems applications APPLIED PHYSICS LETTERS Lee, H. J., Cornella, G., Bravman, J. C. 2000; 76 (23): 3415-3417
  • The evolution of the resistance of aluminum interconnects during electromigration MICROELECTRONICS RELIABILITY Doan, J. C., Bravman, J. C., Flinn, P. A., Marieb, T. N. 2000; 40 (6): 981-990
  • Study of crack propagation at an oxide/polymer interface under varying loading conditions Symposium V on Thin Films-Stresses and Mechanical Properties VIII held at the 1999 MRS Fall Meeting Pantelidis, D., Snodgrass, J., Dauskardt, R. H., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 2000: 407–412
  • Void nucleation on intentionally added defects in Al interconnects APPLIED PHYSICS LETTERS Doan, J. C., Lee, S. H., Bravman, J. C., Flinn, P. A., Marieb, T. N. 1999; 75 (5): 633-635
  • The effects of environment and fatigue on the adhesion and subcritical debonding of dielectric polymers Symposium O: Low-Dielectric Constant Materials at the 1999 MRS Spring Meeting Snodgrass, J. M., Pantelidis, D., Bravman, J. C., Dauskardt, R. H. MATERIALS RESEARCH SOCIETY. 1999: 123–128
  • Thin film stress measurement with a tunneling sensor Symposium AA on Materials Science of Microelectromechanical Systems (MEMS) Devices at the 1998 MRS Fall Meeting Zhang, P., Vinci, R. P., Bravman, J. C., Kenny, T. W. MATERIALS RESEARCH SOCIETY. 1999: 45–50
  • Electromigration voiding in argon-implanted interconnects Materials Reliability in Microelectronics IX Symposium at the 1999 MRS Spring Meeting Meier, N. E., Doan, J. C., Marieb, T. N., Flinn, P. A., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1999: 97–102
  • Experimental study of self-diffusion in silicon using isotopically enriched structures Symposium on Si Front-End Processing-Physics and Technology of Dopant-Defect Interactions Ural, A., Griffin, P. B., Plummer, J. D. MATERIALS RESEARCH SOCIETY. 1999: 97–102
  • The relationship between resistance changes and void volume changes in passivated aluminum interconnects 37th Annual IEEE International Reliability Physics Symposium Doan, J. C., Bravman, J. C., Flinn, P. A., Marieb, T. N. IEEE COMPUTER SOC. 1999: 206–212
  • Direct measurement of nucleation times and growth rates of electromigration induced voids 5th International Workshop on Stress Induced Phenomena in Metallization Doan, J. C., Bravman, J. C., Flinn, P. A., Marieb, T. N. AIP PRESS. 1999: 15–26
  • A detailed study of void motion in passivated aluminum interconnects Materials Reliability in Microelectronics IX Symposium at the 1999 MRS Spring Meeting Doan, J. C., Bravman, J. C., Flinn, P. A., Marieb, T. N. MATERIALS RESEARCH SOCIETY. 1999: 103–108
  • Effect of microstructure and chemical bonding on the adhesion strength of a silicon/polymer interface for microelectronic packaging applications Symposium D on Integration of Dissimilar Materials in Micro- and Optoelectronics / Symposium I on III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications, at the 1998 MRS Fall Meeting Pantelidis, D., Lee, H. J., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1999: 165–170
  • Stress-induced and electromigration voiding in nitride passivated Al interconnects 5th International Workshop on Stress Induced Phenomena in Metallization Lee, S. H., Lee, S., Bravman, J. C., Flinn, P. A., Marieb, T. N. AIP PRESS. 1999: 174–179
  • Observations of low cycle fatigue of Al thin films for MEMS applications Symposium on Microelectromechanical Structures for Materials Research Cornella, G., Vinci, R. P., Iyer, R. S., Dauskardt, R. H., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1998: 81–86
  • A quantitative study of void nucleation times in passivated aluminum interconnects Symposium on Materials Reliability in Microelectronics VIII Dean, J. C., Bravman, J. C., Flinn, P. A., Marieb, T. N. MATERIALS RESEARCH SOCIETY. 1998: 83–88
  • Transient diffusion of beryllium and silicon in gallium arsenide ANNUAL REVIEW OF MATERIALS SCIENCE Haddara, Y. M., Bravman, J. C. 1998; 28: 185-214
  • The effects of passivation thickness and initial aluminum line stress on electromigration behavior Symposium on Materials Reliability in Microelectronics VIII Lee, S., Bravman, J. C., Flinn, P. A., Marieb, T. N. MATERIALS RESEARCH SOCIETY. 1998: 249–254
  • Growth of single crystal YIG fibers by the laser heated pedestal growth method Symposium B on Phase Transformations and Systems Driven Far From Equilibrium at the Materials-Research-Society Fall Meeting Lim, H. J., DeMattei, R. C., Feigelson, R. S. MATERIALS RESEARCH SOCIETY. 1998: 83–88
  • Determination of temperature dependent unstressed lattice spacings in crystalline thin films on substrates Symposium on Thin-Films - Stresses and Mechanical Properties VII at the MRS Fall Meeting Cornella, G., Lee, S., Kraft, O., Nix, W. D., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1998: 527–532
  • High voltage scanning electron microscopy for in-situ electromigration studies 14th International Congress on Electron Microscopy Bravman, J. C., Flinn, P. A., Marieb, T. N., Lee, S., Doan, J. IOP PUBLISHING LTD. 1998: 397–398
  • Void phenomena in passivated metal lines: Recent observations and interpretation 4th International Workshop on Stress Induced Phenomena in Metallization Flinn, P. A., Lee, S., Doan, J., Marieb, T. N., Bravman, J. C., Madden, M. AMER INST PHYSICS. 1998: 250–61
  • Comparisons of constraint effects on Al lines under various passivations 4th International Workshop on Stress Induced Phenomena in Metallization Lee, S., Bravman, J. C., Flinn, P. A., Marieb, T. N. AMER INST PHYSICS. 1998: 277–82
  • Comparison of electromigration behavior in passivated aluminum interconnects 4th International Workshop on Stress Induced Phenomena in Metallization Lee, S., Doan, J., Bravman, J. C., Flinn, P. A., Marieb, T. N., Ogawa, S. AMER INST PHYSICS. 1998: 101–6
  • An analysis technique for extraction of thin film stresses from x-ray data APPLIED PHYSICS LETTERS Cornella, G., Lee, S. H., Nix, W. D., Bravman, J. C. 1997; 71 (20): 2949-2951
  • Stress and microstructural evolution of LPCVD polysilicon thin films during high temperature annealing Symposium on Thin Films - Structure and Morphology Yu, C. L., Flinn, P. A., Lee, S. H., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1997: 403–408
  • In-situ stress measurements during dry oxidation of silicon Symposium on Materials Reliability in Microelectronics, at the 1997 MRS Spring Meeting Yu, C. L., Flinn, P. A., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1997: 95–100
  • Finite element modeling of grain aspect ratio and strain energy density in a textured copper thin film Symposium on Thin Films - Stresses and Mechanical Properties VI, at the 1996 MRS Spring Meeting Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1997: 411–416
  • Comparison of stresses in Al lines under various passivations Symposium on Materials Reliability in Microelectronics, at the 1997 MRS Spring Meeting Lee, S., Bravman, J. C., Flinn, P. A., Marieb, T. N. MATERIALS RESEARCH SOCIETY. 1997: 415–420
  • Observation of electromigration voiding in Cu lines Symposium on Materials Reliability in Microelectronics, at the 1997 MRS Spring Meeting Lee, S. H., Bravman, J. C., Flinn, P. A., Arnaud, L. MATERIALS RESEARCH SOCIETY. 1997: 235–239
  • In-situ measurement of viscous flow of thermal silicon dioxide thin films at high temperature Symposium on Amorphous and Crystalline Insulating Thin Films, at the 1996 MRS Fall Meeting Yu, C. L., Flinn, P. A., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1997: 261–266
  • Effect of encapsulant material on the diffusion of beryllium in molecular beam epitaxy gallium arsenide APPLIED PHYSICS LETTERS Haddara, Y. M., Deal, M. D., Bravman, J. C. 1996; 68 (14): 1939-1941
  • Measurement and interpretation of strain relaxation in passivated Al-0.5% Cu lines JOURNAL OF MATERIALS RESEARCH Besser, P. R., Marieb, T. N., Lee, J., Flinn, P. A., Bravman, J. C. 1996; 11 (1): 184-193
  • Modeling the transient diffusion behavior of beryllium in gallium arsenide and the effect of encapsulant material on non-equilibrium point defect populations 4th International Symposium on Process Physics and Modeling in Semiconductor Technology Haddara, Y. M., Deal, M. D., Bravman, J. C. ELECTROCHEMICAL SOCIETY INC. 1996: 142–48
  • Finite element modeling of grain aspect ratio and strain energy density in a textured copper thin film Symposium on Materials Reliability in Microelectronics VI, at the 1996 MRS Spring Meeting Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1996: 481–486
  • EFFECTS OF BARRIER LAYER AND PROCESSING CONDITIONS ON THIN-FILM CU MICROSTRUCTURE JOURNAL OF ELECTRONIC MATERIALS ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. 1995; 24 (10): 1485-1492
  • PSEUDO-QUATERNARY PHASE-RELATIONS NEAR BI2SR2CACU2O8+X IN REDUCED OXYGEN PRESSURES PHYSICA C MACMANUSDRISCOLL, J. L., Bravman, J. C., Beyers, R. B. 1995; 251 (1-2): 71-88
  • THE INFLUENCE OF STRAIN-ENERGY ON ABNORMAL GRAIN-GROWTH IN COPPER THIN-FILMS APPLIED PHYSICS LETTERS ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. 1995; 67 (8): 1078-1080
  • OBSERVATIONS OF ELECTROMIGRATION-INDUCED VOID NUCLEATION AND GROWTH IN POLYCRYSTALLINE AND NEAR-BAMBOO PASSIVATED AL LINES JOURNAL OF APPLIED PHYSICS Marieb, T., Flinn, P., Bravman, J. C., Gardner, D., Madden, M. 1995; 78 (2): 1026-1032
  • THERMAL STRAIN AND STRESS IN COPPER THIN-FILMS THIN SOLID FILMS Vinci, R. P., ZIELINSKI, E. M., Bravman, J. C. 1995; 262 (1-2): 142-153
  • TRANSPORT CHARACTERIZATION OF CALCIUM-DOPED YBA2CU3O7-DELTA THIN-FILMS PHYSICAL REVIEW B KUCERA, J. T., Bravman, J. C. 1995; 51 (13): 8582-8590
  • MODELING DIFFUSION IN GALLIUM-ARSENIDE - RECENT WORK MRS BULLETIN Haddara, Y. M., Lee, C. C., Hu, J. C., Deal, M. D., Bravman, J. C. 1995; 20 (4): 41-50
  • DIFFUSION OF IMPLANTED BE IN ALXGA1-XAS AS A FUNCTION OF AL CONCENTRATION AND ANNEAL TEMPERATURE APPLIED PHYSICS LETTERS Lee, C. C., Deal, M. D., Bravman, J. C. 1995; 66 (3): 355-357
  • PHASE-EQUILIBRIA IN THE Y-BA-CU-O SYSTEM AND MELT PROCESSING OF AG CLAD Y1BA2CU3O7-X TAPES AT REDUCED OXYGEN PARTIAL PRESSURES PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS MACMANUSDRISCOLL, J. L., Bravman, J. C., Beyers, R. B. 1995; 241 (3-4): 401-413
  • The influence of strain energy minimization on abnormal grain growth in copper thin films 5th Symposium on Materials Reliability in Microelectronics, at the 1995 MRS Spring Meeting ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOC. 1995: 103–108
  • Measurement of the dependence of stress and strain on crystallographic orientation in Cu and Al thin films Symposium on Thin Films - Stresses and Mechanical Properties V, at the 1994 Fall Meeting of the Materials-Research-Society ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1995: 429–434
  • The effects of processing on the microstructure of copper thin films on tantalum barrier layers 5th Symposium on Materials Reliability in Microelectronics, at the 1995 MRS Spring Meeting ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOC. 1995: 303–308
  • A simple analysis of average mechanical behaviour and strain energy density of misoriented grains in a textured film 5th Symposium on Materials Reliability in Microelectronics, at the 1995 MRS Spring Meeting Vinci, R. P., Weihs, T. P., ZIELINSKI, E. M., Barbee, T. W., Bravman, J. C. MATERIALS RESEARCH SOC. 1995: 97–102
  • Effect of copper film thickness on stress and strain in grains of different orientation Symposium on Thin Films - Stresses and Mechanical Properties V, at the 1994 Fall Meeting of the Materials-Research-Society Vinci, R. P., ZIELINSKI, E. M., Bravman, J. C. MATERIALS RESEARCH SOCIETY. 1995: 459–464
  • PHASE-EQUILIBRIA AND MELT PROCESSING OF BI2SR2CA1CU2O8+X TAPES AT REDUCED OXYGEN PARTIAL PRESSURES APPLIED PHYSICS LETTERS MACMANUSDRISCOLL, J. L., Wang, P. C., Bravman, J. C., Beyers, R. B. 1994; 65 (22): 2872-2874
  • STUDIES OF STRUCTURAL DISORDER IN REBA2CU3O7-X THIN-FILMS (RE = RARE-EARTH) AS A FUNCTION OF RARE-EARTH IONIC RADIUS AND FILM DEPOSITION CONDITIONS PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS MACMANUSDRISCOLL, J. L., Alonso, J. A., Wang, P. C., Geballe, T. H., Bravman, J. C. 1994; 232 (3-4): 288-308
  • EFFECTS OF BARRIER LAYER AND ANNEALING ON ABNORMAL GRAIN-GROWTH IN COPPER THIN-FILMS JOURNAL OF APPLIED PHYSICS ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. 1994; 76 (8): 4516-4522
  • EFFECTS OF SILVER AND LEAD ON THE PHASE-STABILITY OF BI2SR2CA1CU2O8+X AND BI2SR2CA2CU3B10+X ABOVE AND BELOW THE SOLIDUS TEMPERATURE JOURNAL OF THE AMERICAN CERAMIC SOCIETY MACMANUSDRISCOLL, J. L., Bravman, J. C., SAVOY, R. J., Gorman, G., Beyers, R. B. 1994; 77 (9): 2305-2313
  • EFFECT OF ION ENERGY ON THE DIFFUSION OF SI IMPLANTED INTO GAAS Meeting of the Electrochemical-Society Lee, C. C., Deal, M. D., Jones, K. S., Robinson, H. G., Bravman, J. C. ELECTROCHEMICAL SOC INC. 1994: 2245–49
  • ELIMINATING DOPANT DIFFUSION AFTER ION-IMPLANTATION BY SURFACE ETCHING APPLIED PHYSICS LETTERS Lee, C. C., Deal, M. D., Bravman, J. 1994; 64 (24): 3302-3304
  • OBSERVATION OF VOIDS INDUCED BY MECHANICAL-STRESS AND ELECTROMIGRATION IN PASSIVATED AL LINES DEPOSITED AT DIFFERENT PURITY LEVELS APPLIED PHYSICS LETTERS Marieb, T., Bravman, J. C., Flinn, P., Gardner, D. S., Madden, M. 1994; 64 (18): 2424-2426
  • ELASTIC STRAIN GRADIENTS AND X-RAY-LINE BROADENING EFFECTS AS A FUNCTION OF TEMPERATURE IN ALUMINUM THIN-FILMS ON SILICON JOURNAL OF MATERIALS RESEARCH Venkatraman, R., Besser, P. R., Bravman, J. C., Brennan, S. 1994; 9 (2): 328-335
  • AN X-RAY-METHOD FOR DIRECT DETERMINATION OF THE STRAIN STATE AND STRAIN RELAXATION IN MICRON-SCALE PASSIVATED METALLIZATION LINES DURING THERMAL CYCLING JOURNAL OF MATERIALS RESEARCH Besser, P. R., Brennan, S., Bravman, J. C. 1994; 9 (1): 13-24
  • MICROSTRUCTURAL CHARACTERIZATION OF COPPER THIN-FILMS ON METALLIC UNDERLAYERS 4th Symposium on Materials Reliability in Microelectronics, at the 1994 MRS Spring Meeting ZIELINSKI, E. M., Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOC. 1994: 307–312
  • THERMAL-STRESSES IN PASSIVATED COPPER INTERCONNECTS DETERMINED BY X-RAY-ANALYSIS AND FINITE-ELEMENT MODELING 4th Symposium on Materials Reliability in Microelectronics, at the 1994 MRS Spring Meeting Vinci, R. P., ZIELINSKI, E. M., Bravman, J. C. MATERIALS RESEARCH SOC. 1994: 289–294
  • UNDERSTANDING AND ELECTROCHEMICAL CONTROL OF YBA2CU3O7-X THIN-FILM EPITAXY ON YTTRIUM STABILIZED ZIRCONIA JOURNAL OF APPLIED PHYSICS MACMANUSDRISCOLL, J., Geballe, T. H., Bravman, J. C. 1994; 75 (1): 412-422
  • X-RAY DETERMINATION OF STRAINS, STRESS, AND RELAXATION IN INTERCONNECT METALLIZATIONS 2nd International Workshop on Stress-Induced Phenomena in Metallization Besser, P. R., Bravman, J. C. AIP PRESS. 1994: 46–61
  • IN-SITU OBSERVATIONS OF VOIDING IN METAL LINES UNDER PASSIVATION 4th Symposium on Materials Reliability in Microelectronics, at the 1994 MRS Spring Meeting Marieb, T., Bravman, J. C., Flinn, P., Madden, M. MATERIALS RESEARCH SOC. 1994: 409–413
  • DIRECT OBSERVATION OF THE GROWTH AND MOVEMENT OF ELECTROMIGRATION VOIDS UNDER PASSIVATION 2nd International Workshop on Stress-Induced Phenomena in Metallization Marieb, T. N., ABRATOWSKI, E., Bravman, J. C., Madden, M., Flinn, P. AIP PRESS. 1994: 1–14
  • FINITE-ELEMENT MODELING AND X-RAY-MEASUREMENT OF STRAIN IN PASSIVATED AL LINES DURING THERMAL CYCLING JOURNAL OF THE ELECTROCHEMICAL SOCIETY Besser, P. R., Mack, A. S., Fraser, D. B., Bravman, J. C. 1993; 140 (6): 1769-1772
  • NUCLEATION AND GROWTH MECHANISMS OF A,B-AXIS-ORIENTED YBA2CU3O7-DELTA FILMS ON LAALO3 PHYSICAL REVIEW B Streiffer, S. K., Lairson, B. M., ZIELINSKI, E. M., Bravman, J. C. 1993; 47 (17): 11431-11438
  • DISPERSION STRENGTHENING OF AL FILMS BY OXYGEN-ION IMPLANTATION SYMP ON MATERIALS RELIABILITY IN MICROELECTRONICS 3 Bader, S., Flinn, P. A., Arzt, E., Nix, W. D. MATERIALS RESEARCH SOC. 1993: 249–254
  • STRESS IN COPPER THIN-FILMS WITH BARRIER LAYERS Symposium on Thin Films: Stresses and Mechanical Properties IV, at the 1993 Spring Meeting of the Materials-Research-Society Vinci, R. P., Bravman, J. C. MATERIALS RESEARCH SOC. 1993: 337–341
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  • STRESS GRADIENT AND RELAXATION MEASUREMENTS IN AL AND OXYGEN-IMPLANTED AL FILMS Symposium on Thin Films: Stresses and Mechanical Properties IV, at the 1993 Spring Meeting of the Materials-Research-Society Besser, P. R., Bader, S., Venkatraman, R., Bravman, J. C. MATERIALS RESEARCH SOC. 1993: 323–328
  • STRAIN RELAXATION AND IN-SITU OBSERVATION OF VOIDING IN PASSIVATED ALUMINUM-ALLOY LINES Symposium on Thin Films: Stresses and Mechanical Properties IV, at the 1993 Spring Meeting of the Materials-Research-Society Besser, P. R., Marieb, T. N., Bravman, J. C. MATERIALS RESEARCH SOC. 1993: 249–254
  • SEPARATION OF FILM THICKNESS AND GRAIN-BOUNDARY STRENGTHENING EFFECTS IN AL THIN-FILMS ON SI JOURNAL OF MATERIALS RESEARCH Venkatraman, R., Bravman, J. C. 1992; 7 (8): 2040-2048
  • LIMITS ON THE USE OF TUNNELING TO DESCRIBE THE PD-GE OHMIC CONTACT TO GAAS 38TH NATIONAL SYMP OF THE AMERICAN VACUUM SOC HERRERAGOMEZ, A., Meissner, P. L., Bravman, J. C., SPICER, W. E. A V S AMER INST PHYSICS. 1992: 1029–34
  • CRITICAL CURRENTS AND MAGNETIZATION DECAY IN OXYGEN DEFICIENT YBA2CU3O7-DELTA THIN-FILMS INTERNATIONAL CONF ON MATERIALS AND MECHANISMS OF SUPERCONDUCTIVITY HIGH TEMPERATURE SUPERCONDUCTORS 3 Lairson, B. M., Vargas, J. L., Streiffer, S. K., Larbalestier, D. C., Bravman, J. C. ELSEVIER SCIENCE BV. 1991: 2161–2162
  • INITIAL CONDITIONS IN MAGNETIZATION DECAY OF HIGH-TC SUPERCONDUCTING THIN-FILMS INTERNATIONAL CONF ON MATERIALS AND MECHANISMS OF SUPERCONDUCTIVITY HIGH TEMPERATURE SUPERCONDUCTORS 3 Lairson, B. M., Sun, J. Z., Geballe, T. H., Bravman, J. C. ELSEVIER SCIENCE BV. 1991: 2519–2520
  • THE EFFECT OF LASER REFLOW ON THE VARIATION OF STRESS WITH THERMAL CYCLING IN ALUMINUM THIN-FILMS TOPICAL CONF ON THE MECHANICAL BEHAVIOR OF THIN FILMS / 37TH ANNUAL SYMP OF THE AMERICAN VACUUM SOC Venkatraman, R., Chen, S., Bravman, J. C. A V S AMER INST PHYSICS. 1991: 2536–42
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  • OXIDATION-KINETICS OF YBA2CU3O7-X THIN-FILMS IN THE PRESENCE OF ATOMIC OXYGEN AND MOLECULAR-OXYGEN BY INSITU RESISTIVITY MEASUREMENTS JOURNAL OF APPLIED PHYSICS Yamamoto, K., Lairson, B. M., Bravman, J. C., Geballe, T. H. 1991; 69 (10): 7189-7201
  • THICKNESS DEPENDENCE OF THE TWIN DENSITY IN YBA2CU3O7-DELTA THIN-FILMS SPUTTERED ONTO MGO SUBSTRATES APPLIED PHYSICS LETTERS Streiffer, S. K., ZIELINSKI, E. M., Lairson, B. M., Bravman, J. C. 1991; 58 (19): 2171-2173
  • THERMAL-ACTIVATION OF VORTEX MOTION IN YBA2CU3O7-DELTA FILMS AT LOW-TEMPERATURES PHYSICAL REVIEW B Lairson, B. M., Sun, J. Z., Geballe, T. H., Beasley, M. R., Bravman, J. C. 1991; 43 (13): 10405-10412
  • MAGNETIC-RELAXATION, CURRENT-VOLTAGE CHARACTERISTICS, AND POSSIBLE DISSIPATION MECHANISMS FOR HIGH-TC SUPERCONDUCTING THIN-FILMS OF Y-BA-CU-O PHYSICAL REVIEW B Sun, J. Z., Eom, C. B., LAIRSON, B., Bravman, J. C., Geballe, T. H. 1991; 43 (4): 3002-3008
  • ROLE OF ATOMIC OXYGEN PRODUCED BY ECR PLASMA IN THE OXIDATION OF YBA2CU3O7-X THIN-FILMS STUDIED BY INSITU RESISTIVITY MEASUREMENT SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY Yamamoto, K., Lairson, B. M., Eom, C. B., Hammond, R. H., Bravman, J. C., Geballe, T. H. IOP PUBLISHING LTD. 1991: S382–S384
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  • VORTEX PINNING AND TWIN BOUNDARIES IN YBA2CU3O7-DELTA THIN-FILMS PHYSICAL REVIEW B Lairson, B. M., Streiffer, S. K., Bravman, J. C. 1990; 42 (16): 10067-10074
  • MECHANICAL-PROPERTIES AND MICROSTRUCTURAL CHARACTERIZATION OF AL-0.5-PERCENT CU THIN-FILMS SYMP AT THE 1990 ANNUAL MEETING OF THE METALLURGICAL SOC : METALLIZATIONS FOR ELECTRONICS APPLICATIONS Venkatraman, R., Bravman, J. C., Nix, W. D., Davies, P. W., Flinn, P. A., Fraser, D. B. MINERALS METALS MATERIALS SOC. 1990: 1231–37
  • SYNTHESIS AND PROPERTIES OF YBA2CU3O7 THIN-FILMS GROWN INSITU BY 90-DEGREES OFF-AXIS SINGLE MAGNETRON SPUTTERING PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS Eom, C. B., Sun, J. Z., Lairson, B. M., Streiffer, S. K., Marshall, A. F., Yamamoto, K., Anlage, S. M., Bravman, J. C., Geballe, T. H. 1990; 171 (3-4): 354-382
  • ROLE OF ATOMIC OXYGEN PRODUCED BY AN ELECTRON-CYCLOTRON RESONANCE PLASMA IN THE OXIDATION OF YBA2CU3O7-X THIN-FILMS STUDIED BY INSITU RESISTIVITY MEASUREMENT APPLIED PHYSICS LETTERS Yamamoto, K., Lairson, B. M., Eom, C. B., Hammond, R. H., Bravman, J. C., Geballe, T. H. 1990; 57 (18): 1936-1938
  • MEASURING STIFFNESSES AND RESIDUAL-STRESSES OF SILICON-NITRIDE THIN-FILMS 1989 FALL MEETING OF THE METALLURGICAL SOC : DEFORMATION IN ELECTRONIC MATERIALS AND DEVICES Hong, S., Weihs, T. P., Bravman, J. C., Nix, W. D. MINERALS METALS MATERIALS SOC. 1990: 903–9
  • MOLECULAR-BEAM EPITAXIAL-GROWTH OF LAYERED BI-SR-CA-CU-O COMPOUNDS JOURNAL OF CRYSTAL GROWTH Schlom, D. G., Marshall, A. F., SIZEMORE, J. T., Chen, Z. J., Eckstein, J. N., Bozovic, I., VONDESSONNECK, K. E., Harris, J. S., Bravman, J. C. 1990; 102 (3): 361-375
  • MICROWAVE PROPERTIES OF HIGHLY ORIENTED YBA2CU3O7-X THIN-FILMS APPLIED PHYSICS LETTERS Inam, A., Wu, X. D., Nazar, L., Hegde, M. S., Rogers, C. T., Venkatesan, T., Simon, R. W., Daly, K., Padamsee, H., Kirchgessner, J., Moffat, D., Rubin, D., Shu, Q. S., KALOKITIS, D., Fathy, A., Pendrick, V., Brown, R., Brycki, B., BELOHOUBEK, E., DRABECK, L., Gruner, G., Hammond, R., GAMBLE, F., Lairson, B. M., Bravman, J. C. 1990; 56 (12): 1178-1180
  • ELIMINATION OF CURRENT DISSIPATION IN HIGH TRANSITION-TEMPERATURE SUPERCONDUCTORS SCIENCE Sun, J. Z., LAIRSON, B., Eom, C. B., Bravman, J., Geballe, T. H. 1990; 247 (4940): 307-309

    Abstract

    The relaxation of the shielding current-induced magnetic moment in YBa(2)Cu(3)O(7) thin films, which were grown in situ, is studied as a function of temperature. Although typical relaxations cause a large amount of decay in the magnetic shielding current (on the order of 10 to 20 percent for the first 1000 seconds), it is shown that this is not necessarily a serious problem for applications such as magnets operating in persistent-current modes. This is because the decay of the magnetic shielding current depends sensitively on how far away the operating current density is from the critical current density J(c). By using a quenching process the shielding current is reduced slightly below J(c) and the relaxation is dramatically reduced. A general relation between the relaxation rate at J(c) and the reduction of the relaxation rate upon lowering of the operating current is obtained and is shown to be consistent with experimental data.

    View details for Web of Science ID A1990CJ66900030

    View details for PubMedID 17735848

  • VORTEX MOTION AND TIME-DEPENDENT MAGNETIC RESPONSES IN HIGH-TC SUPERCONDUCTORS INTERNATIONAL CONF ON MATERIALS AND MECHANISMS OF SUPERCONDUCTIVITY : HIGH TEMPERATURE SUPERCONDUCTORS 2 Sun, J. Z., Eom, C. B., LAIRSON, B., Bravman, J. C., Geballe, T. H., Kapitulnik, A. ELSEVIER SCIENCE BV. 1989: 687–688
  • PHASE CHARACTERIZATION OF DYSPROSIUM BARIUM COPPER-OXIDE THIN-FILMS GROWN ON STRONTIUM-TITANATE BY MOLECULAR-BEAM EPITAXY JOURNAL OF MATERIALS RESEARCH Hellman, E. S., Schlom, D. G., Marshall, A. F., Streiffer, S. K., Harris, J. S., Beasley, M. R., Bravman, J. C., Geballe, T. H., Eckstein, J. N., Webb, C. 1989; 4 (3): 476-495
  • DETERMINATION OF HIGH-FIELD-ENHANCED EMISSION RATES WITH THE CONSTANT CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE JOURNAL OF APPLIED PHYSICS Chang, M. B., Tomokage, H., SHIAU, J. J., BUBE, R. H., Bravman, J. C. 1989; 65 (7): 2734-2738
  • MICROSTRUCTURAL CHARACTERIZATION OF YBA2CU3O7-DELTA THIN-FILMS ON SRTIO3 USING 4-AXIS X-RAY-DIFFRACTION IEEE TRANSACTIONS ON MAGNETICS Sizemore, J., Barton, R., Marshall, A., Bravman, J. C., Naito, M., Char, K. 1989; 25 (2): 2245-2249
  • MOLECULAR-BEAM EPITAXY OF LAYERED DY-BA-CU-O COMPOUNDS APPLIED PHYSICS LETTERS Schlom, D. G., Eckstein, J. N., Hellman, E. S., Streiffer, S. K., Harris, J. S., Beasley, M. R., Bravman, J. C., Geballe, T. H., Webb, C., VONDESSONNECK, K. E., Turner, F. 1988; 53 (17): 1660-1662
  • MECHANICAL DEFLECTION OF CANTILEVER MICROBEAMS - A NEW TECHNIQUE FOR TESTING THE MECHANICAL-PROPERTIES OF THIN-FILMS JOURNAL OF MATERIALS RESEARCH Weihs, T. P., Hong, S., Bravman, J. C., Nix, W. D. 1988; 3 (5): 931-942
  • OBSERVATIONS OF BETA-TUNGSTEN DEPOSITED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION APPLIED PHYSICS LETTERS Paine, D. C., Bravman, J. C., Yang, C. Y. 1987; 50 (9): 498-500
  • STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF LPCVD TUNGSTEN CONTACTS TO SILICON INSTITUTE OF PHYSICS CONFERENCE SERIES Paine, D. C., Bravman, J. C. 1987: 547-552
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  • DAMAGE CALCULATION AND MEASUREMENT FOR GAAS AMORPHIZED BY SI IMPLANTATION APPLIED PHYSICS LETTERS OPYD, W. G., Gibbons, J. F., Bravman, J. C., Parker, M. A. 1986; 49 (15): 974-976
  • STRUCTURE AND MORPHOLOGY OF POLYCRYSTALLINE SILICON-SINGLE CRYSTAL SILICON INTERFACES JOURNAL OF APPLIED PHYSICS Bravman, J. C., PATTON, G. L., Plummer, J. D. 1985; 57 (8): 2779-2782
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