Ke Zeng received his Ph.D. and MS degree in the Electrical Engineering Department of SUNY-Buffalo. His current research is focused on fabricating various high power/performance electronic devices based on GaN and Ga2O3, especially utilizing various novel edge termination techniques and device structures, as well as understanding the fundamental physics underlying these devices.
Srabanti Chowdhury, Postdoctoral Faculty Sponsor
- A discussion on various experimental methods of impact ionization coefficient measurement in GaN AIP ADVANCES 2022; 12 (3)
- On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress IEEE. 2021: 40-43
- Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination IEEE. 2021
- Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation IEEE TRANSACTIONS ON ELECTRON DEVICES 2020; 67 (6): 2457–62
- Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage IEEE ELECTRON DEVICE LETTERS 2020; 41 (6): 836–39