Bio

Ke Zeng received his Ph.D. and MS degree in the Electrical Engineering Department of SUNY-Buffalo. His current research is focused on fabricating various high power/performance electronic devices based on GaN and Ga2O3, especially utilizing various novel edge termination techniques and device structures, as well as understanding the fundamental physics underlying these devices.

Stanford Advisors

Contact

Additional Info

  • Mail Code: 9505

Links

Lab Affiliations

All Publications

  • Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer IEEE ELECTRON DEVICE LETTERS Zeng, K., Soman, R., Bian, Z., Jeong, S., Chowdhury, S. 2022; 43 (9): 1527-1530

    View details for DOI 10.1109/LED.2022.3196035

    View details for Web of Science ID 000845067200038

  • 2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer IEEE ELECTRON DEVICE LETTERS Bian, Z., Zeng, K., Chowdhury, S. 2022; 43 (4): 596-599

    View details for DOI 10.1109/LED.2022.3149748

    View details for Web of Science ID 000792918100027

  • A discussion on various experimental methods of impact ionization coefficient measurement in GaN AIP ADVANCES Ji, D., Zeng, K., Bian, Z., Shankar, B., Gunning, B. P., Binder, A., Dickerson, J. R., Aktas, O., Anderson, T. J., Kaplar, R. J., Chowdhury, S. 2022; 12 (3)

    View details for DOI 10.1063/5.0083111

    View details for Web of Science ID 000772898200002

  • Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization Shankar, B., Bian, Z., Zeng, K., Meng, C., Martinez, R., Chowdhury, S., Gunning, B., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., IEEE IEEE. 2022

    View details for DOI 10.1109/IRPS48227.2022.9764525

    View details for Web of Science ID 000922926400099

  • Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode under UIS Stress for Edge-termination Optimization Shankar, B., Bian, Z., Zeng, K., Meng, C., Martinez, R., Chowdhury, S., Gunning, B., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., IEEE IEEE. 2022

    View details for Web of Science ID 000922926400201

  • On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress Shankar, B., Zeng, K., Gunning, B., Lee, K., Martinez, R., Meng, C., Zhou, X., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., Chowdhury, S., IEEE IEEE. 2021: 40-43

    View details for DOI 10.1109/WiPDA49284.2021.9645154

    View details for Web of Science ID 000787172500009

  • Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination Zeng, K., Chowdhury, S., Gunning, B., Kaplar, R., Anderson, T., IEEE IEEE. 2021

    View details for DOI 10.1109/IRPS46558.2021.9405165

    View details for Web of Science ID 000672563100076

  • Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation IEEE TRANSACTIONS ON ELECTRON DEVICES Zeng, K., Chowdhury, S. 2020; 67 (6): 2457–62

    View details for DOI 10.1109/TED.2020.2987040

    View details for Web of Science ID 000538163700037

  • Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage IEEE ELECTRON DEVICE LETTERS Sharma, S., Zeng, K., Saha, S., Singisetti, U. 2020; 41 (6): 836–39

    View details for DOI 10.1109/LED.2020.2991146

    View details for Web of Science ID 000541155300011