Stanford Advisors


All Publications


  • Reproducing capacitive cyclic voltammetric curves by simulation: When are simplified geometries appropriate? ELECTROCHEMISTRY COMMUNICATIONS Mele, L., Verardo, C., Palestri, P. 2022; 142
  • Selectivity, Sensitivity and Detection Range in Ion-Selective Membrane-Based Electrochemical Potentiometric Sensors Analyzed With Poisson-Boltzmann Equilibrium Model IEEE SENSORS JOURNAL Mele, L., Palestri, P., Alam, M. A., Selmi, L. 2022; 22 (15): 15010-15021
  • Modeling Non-Equilibrium Ion-Transport in Ion-Selective-Membrane/Electrolyte Interfaces for Electrochemical Potentiometric Sensors IEEE SENSORS JOURNAL Mele, L., Palestri, P., Selmi, L., Alam, M. A. 2022; 22 (13): 12987-12996
  • Multiphysics Finite-Element Modeling of the Neuron/Electrode Electrodiffusive Interaction Leva, F., Verardo, C., Mele, L., Palestri, P., Selmi, L., IEEE IEEE. 2022
  • Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications SENSORS Bellando, F., Mele, L., Palestri, P., Zhang, J., Ionescu, A., Selmi, L. 2021; 21 (5)

    Abstract

    Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power integrated sensors, very little is known about their noise characterization when being operated in a liquid gate configuration. The noise characteristics in various regimes of their operation are important to select the most suitable conditions for signal-to-noise ratio (SNR) and power consumption. This work reports systematic DC, transient, and noise characterizations and models of a back-end of line (BEOL)-modified foundry-made ISFET used as pH sensor. The aim is to determine the sensor sensitivity and resolution to pH changes and to calibrate numerical and lumped element models, capable of supporting the interpretation of the experimental findings. The experimental sensitivity is approximately 40 mV/pH with a normalized resolution of 5 mpH per ┬Ám2, in agreement with the literature state of the art. Differences in the drain current noise spectra between the ISFET and MOSFET configurations of the same device at low currents (weak inversion) suggest that the chemical noise produced by the random binding/unbinding of the H+ ions on the sensor surface is likely the dominant noise contribution in this regime. In contrast, at high currents (strong inversion), the two configurations provide similar drain noise levels suggesting that the noise originates in the underlying FET rather than in the sensing region.

    View details for DOI 10.3390/s21051779

    View details for Web of Science ID 000628547200001

    View details for PubMedID 33806584

    View details for PubMedCentralID PMC7961866

  • General Model and Equivalent Circuit for the Chemical Noise Spectrum Associated to Surface Charge Fluctuation in Potentiometric Sensors IEEE SENSORS JOURNAL Mele, L., Palestri, P., Selmi, L. 2021; 21 (5): 6258-6269
  • Device simulations of ion-sensitive FETs with arbitrary surface chemical reactions Mele, L., Palestri, P., Selmi, L., IEEE IEEE. 2021
  • General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors IEEE TRANSACTIONS ON ELECTRON DEVICES Mele, L. J., Palestri, P., Selmi, L. 2020; 67 (3): 1149-1156
  • Modeling Selectivity and Cross-sensitivity in membrane-based potentiometric sensors Mele, L., Palestri, P., Selmi, L., IEEE IEEE. 2020
  • A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs Mele, L., Palestri, P., Selmi, L., Driussi, F. IEEE. 2019: 343-346