Bio

Julian graduated in electrical engineering and received his PhD from the University of Udine (Italy). During his PhD, he worked on electrochemical modeling of performance and noise for electronic biosensors and bioactuators. Then he continued as a postdoctoral scholar in Prof. Palestri’s group, where he focused on modeling and simulations of conjugated polymers for bioelectronic applications. He joined Prof. Salleo's group in the fall of 2022 where he is contributing to the understanding of the physical operation of organic devices.

Honors & Awards

  • Editor’s Choice Article Certificate, MDPI Sensors Journal (2021)
  • Best BSc Graduate student award in Electrical Engineering, University of Udine (3/07/2015)

Stanford Advisors

Contact

  • Academic
    ljmele@stanford.edu
    University - Scholar Department: Materials Science and Engineering Position: Postdoctoral Scholar

Additional Info

All Publications

  • Critical overview and comparison between models for adsorption-desorption noise in bio-chemical sensors APPLIED SURFACE SCIENCE ADVANCES Bettetti, F., Mele, L., Palestri, P. 2023; 18

    View details for DOI 10.1016/j.apsadv.2023.100472

    View details for Web of Science ID 001092734100001

  • Reproducing capacitive cyclic voltammetric curves by simulation: When are simplified geometries appropriate? ELECTROCHEMISTRY COMMUNICATIONS Mele, L., Verardo, C., Palestri, P. 2022; 142

    View details for DOI 10.1016/j.elecom.2022.107378

    View details for Web of Science ID 000879001500003

  • Selectivity, Sensitivity and Detection Range in Ion-Selective Membrane-Based Electrochemical Potentiometric Sensors Analyzed With Poisson-Boltzmann Equilibrium Model IEEE SENSORS JOURNAL Mele, L., Palestri, P., Alam, M. A., Selmi, L. 2022; 22 (15): 15010-15021

    View details for DOI 10.1109/JSEN.2022.3185168

    View details for Web of Science ID 000835829900041

  • Modeling Non-Equilibrium Ion-Transport in Ion-Selective-Membrane/Electrolyte Interfaces for Electrochemical Potentiometric Sensors IEEE SENSORS JOURNAL Mele, L., Palestri, P., Selmi, L., Alam, M. A. 2022; 22 (13): 12987-12996

    View details for DOI 10.1109/JSEN.2022.3178297

    View details for Web of Science ID 000819823500065

  • Multiphysics Finite-Element Modeling of the Neuron/Electrode Electrodiffusive Interaction Leva, F., Verardo, C., Mele, L., Palestri, P., Selmi, L., IEEE IEEE. 2022

    View details for DOI 10.1109/SENSORS52175.2022.9967049

    View details for Web of Science ID 000918629700032

  • Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications SENSORS Bellando, F., Mele, L., Palestri, P., Zhang, J., Ionescu, A., Selmi, L. 2021; 21 (5)

    Abstract

    Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power integrated sensors, very little is known about their noise characterization when being operated in a liquid gate configuration. The noise characteristics in various regimes of their operation are important to select the most suitable conditions for signal-to-noise ratio (SNR) and power consumption. This work reports systematic DC, transient, and noise characterizations and models of a back-end of line (BEOL)-modified foundry-made ISFET used as pH sensor. The aim is to determine the sensor sensitivity and resolution to pH changes and to calibrate numerical and lumped element models, capable of supporting the interpretation of the experimental findings. The experimental sensitivity is approximately 40 mV/pH with a normalized resolution of 5 mpH per µm2, in agreement with the literature state of the art. Differences in the drain current noise spectra between the ISFET and MOSFET configurations of the same device at low currents (weak inversion) suggest that the chemical noise produced by the random binding/unbinding of the H+ ions on the sensor surface is likely the dominant noise contribution in this regime. In contrast, at high currents (strong inversion), the two configurations provide similar drain noise levels suggesting that the noise originates in the underlying FET rather than in the sensing region.

    View details for DOI 10.3390/s21051779

    View details for Web of Science ID 000628547200001

    View details for PubMedID 33806584

    View details for PubMedCentralID PMC7961866

  • General Model and Equivalent Circuit for the Chemical Noise Spectrum Associated to Surface Charge Fluctuation in Potentiometric Sensors IEEE SENSORS JOURNAL Mele, L., Palestri, P., Selmi, L. 2021; 21 (5): 6258-6269

    View details for DOI 10.1109/JSEN.2020.3038036

    View details for Web of Science ID 000616329300074

  • Device simulations of ion-sensitive FETs with arbitrary surface chemical reactions Mele, L., Palestri, P., Selmi, L., IEEE IEEE. 2021

    View details for DOI 10.1109/EuroSOI-ULIS53016.2021.9560696

    View details for Web of Science ID 000790181800046

  • General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors IEEE TRANSACTIONS ON ELECTRON DEVICES Mele, L. J., Palestri, P., Selmi, L. 2020; 67 (3): 1149-1156

    View details for DOI 10.1109/TED.2020.2964062

    View details for Web of Science ID 000519593800057

  • Modeling Selectivity and Cross-sensitivity in membrane-based potentiometric sensors Mele, L., Palestri, P., Selmi, L., IEEE IEEE. 2020

    View details for DOI 10.1109/EUROSOI-ULIS49407.2020.9365285

    View details for Web of Science ID 000790086400006

  • A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs Mele, L., Palestri, P., Selmi, L., Driussi, F. IEEE. 2019: 343-346

    View details for Web of Science ID 000651583400087

https://orcid.org/0000-0003-2870-2613