Puyang Huang

All Publications

• Tunable chiral magneto-transport through band structure engineering in magnetic topological insulators Mn(Bi1-xSbx)2Te4. Science advances Chen, P., Huang, P., Li, Z., Liu, J., Yao, Q., Sun, Q., Li, A., Liu, X., Zhang, Y., Cai, X., Liu, J., Liao, L., Yang, G., Liu, Z., Yang, Y., Han, X., Zou, J., Hesjedal, T., Qiao, Z., Kou, X. 2025; 11 (20): eadt6084

  Abstract

  Berry curvature and spin texture are representative tuning parameters that govern spin-orbit coupling-related physics and are also the foundation for future device applications. Here, we investigate the impact of the Sb-to-Bi ratio on shaping the electronic band structure and its correlated first- and second-harmonic magneto-transport signals in the intrinsic magnetic topological insulator Mn(Bi1-xSbx)2Te4. First-principles calculations reveal that the introduction of Sb not only triggers a topological phase transition but also changes the integral of the Berry curvature at the shifted Fermi level, which leads to the reversal of the anomalous Hall resistance polarity for Sb fractions x > 0.67. Moreover, it also induces the opposite spin splitting of the valence bands compared to the Sb-free host, and the resulting clockwise/counterclockwise spin chirality gives rise to a tunable unidirectional second-harmonic anomalous Hall response. Our findings pave the way for constructing chiral spin-orbitronic devices through band structure engineering.

  View details for DOI 10.1126/sciadv.adt6084

  View details for PubMedID 40378210

  View details for PubMedCentralID PMC12083519

• Controllable magnetism and an anomalous Hall effect in (Bi1-xSbx)2Te3-intercalated MnBi2Te4 multilayers. Nanoscale Chen, P., Liu, J., Zhang, Y., Huang, P., Bollard, J., Yang, Y., Arnold, E. L., Liu, X., Yao, Q., Choueikani, F., van der Laan, G., Hesjedal, T., Kou, X. 2025; 17 (11): 6562-6569

  Abstract

  MnBi2Te4-based superlattices not only enrich the materials family of magnetic topological insulators, but also offer a platform for tailoring magnetic properties and interlayer magnetic coupling through the strategic insertion layer design. Here, we present the electrical and magnetic characterization of (Bi1-xSbx)2Te3-intercalated MnBi2Te4 multilayers grown by molecular beam epitaxy. By precisely adjusting the Sb-to-Bi ratio in the spacer layer, the magneto-transport response is modulated, unveiling the critical role of Fermi level tuning in optimizing the anomalous Hall signal and reconfiguring the magnetic ground state. Moreover, by varying the interlayer thickness, tunable magnetic coupling is achieved, enabling precise control over ferromagnetic and antiferromagnetic components. These findings pave the way for the exploration of versatile magnetic topological phases in quantum materials systems.

  View details for DOI 10.1039/d4nr05486e

  View details for PubMedID 39964749

• Tunable interfacial Rashba spin-orbit coupling in asymmetric Al_xIn_1-xSb/InSb/CdTe quantum well heterostructures APPLIED PHYSICS LETTERS Zhi, Z., Wu, Y., Ruan, H., Liu, J., Huang, P., Yao, S., Liu, X., Tang, C., Yao, Q., Sun, L., Zhang, Y., Xiao, Y., Che, R., Kou, X. 2025; 126 (1)

  View details for DOI 10.1063/5.0233964

  View details for Web of Science ID 001390823400004

• Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-Based Spin-Orbit Torque Devices. ACS nano Huang, P., Liu, X., Xin, Y., Gu, Y., Lee, A., Zhang, Y., Xu, Z., Chen, P., Zhang, Y., Deng, W., Yu, G., Wu, D., Liu, Z., Yao, Q., Yang, Y., Zhu, Z., Kou, X. 2024; 18 (43): 29469-29478

  Abstract

  Nonvolatile memristors offer a salient platform for artificial neural network (ANN), yet the integration of different function and algorithm blocks into one hardware system remains challenging. Here we demonstrate the brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi2Te3/CrTe2 heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear and symmetrical long-term potentiation/depression process, resulting in a fast-training of the MNIST data set with the classification accuracy above 90%. Meanwhile, the Sigmoid-shape transition curve inherited in the SOT-N cell replaces the software-based activation function block, hence reducing the system complexity. On this basis, we employ a serial-connected, voltage-mode sensing ANN architecture to enhance the vector-matrix multiplication signal strength with low reading error of 0.61% while simplifying the peripheral circuitry. Furthermore, the trainable activation function of SOT-N enables the implementation of the Batch Normalization algorithm and activation operation within one clock cycle, which bring about improved on/off-chip training performance close to the ideal baseline.

  View details for DOI 10.1021/acsnano.4c03278

  View details for PubMedID 39405579

• Observation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures. ACS applied materials & interfaces Liu, J., Liao, L., Rong, B., Wu, Y., Ruan, H., Zhang, Y., Zhi, Z., Liu, X., Huang, P., Yao, S., Cai, X., Tang, C., Yao, Q., Sun, L., Yang, Y., Yu, G., Che, R., Kou, X. 2024; 16 (34): 45687-45694

  Abstract

  Magnetoresistance effects are crucial for understanding the charge-spin transport as well as propelling the advancement of spintronic applications. Here, we report the coexistence of magnetic-moment-dependent (MD) and magnetic-field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to different spin scattering mechanisms, these two types of non-reciprocal charge transports show opposite polarities with respect to the magnetic field direction, which further enables an effective phase modulation of the angular-dependent magnetoresistance. The demonstration of the tunable UMR response validates our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic memory and sensor designs.

  View details for DOI 10.1021/acsami.4c08159

  View details for PubMedID 39162076

• Interfacial Resonance States-Induced Negative Tunneling Magneto-Resistance in Orthogonally Magnetized CoFeB/MgO/CoFeB IEEE TRANSACTIONS ON MAGNETICS Huang, P., Chen, A., Dong, J., Wu, D., Liu, X., Zhi, Z., Liu, J., Lee, A., Fang, B., Zhang, J., Zhang, X., Kou, X. 2024; 60 (3)

  View details for DOI 10.1109/TMAG.2024.3354258

  View details for Web of Science ID 001178305600092

• Enhancement of Voltage-Controlled Magnetic Anisotropy in Orthogonally-Magnetized CoFeB/MgO/CoFeB Huang, P., Chen, A., Cai, X., Wu, D., Zhang, X., Kou, X., IEEE IEEE. 2024

  View details for DOI 10.1109/INTERMAGSHORTPAPERS61879.2024.10576853

  View details for Web of Science ID 001266133200102

• Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe₂ for Reliable Magnetic Memory Applications ADVANCED FUNCTIONAL MATERIALS Liu, X., Huang, P., Xia, Y., Gao, L., Liao, L., Cui, B., Backes, D., van der Laan, G., Hesjedal, T., Ji, Y., Chen, P., Zhang, Y., Wu, F., Wang, M., Zhang, J., Yu, G., Song, C., Chen, Y., Liu, Z., Yang, Y., Peng, Y., Li, G., Yao, Q., Kou, X. 2023; 33 (50)

  View details for DOI 10.1002/adfm.202304454

  View details for Web of Science ID 001064025900001

• Room-Temperature Gate-Tunable Nonreciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures. Advanced materials (Deerfield Beach, Fla.) Li, L., Wu, Y., Liu, X., Liu, J., Ruan, H., Zhi, Z., Zhang, Y., Huang, P., Ji, Y., Tang, C., Yang, Y., Che, R., Kou, X. 2023; 35 (3): e2207322

  Abstract

  Symmetry manipulation can be used to effectively tailor the physical order in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, nonreciprocal magneto-transport may arise in nonmagnetic systems to enrich spin-orbit effects. Here, the observation of unidirectional magnetoresistance (UMR) in lattice-matched InSb/CdTe films is investigated up to room temperature. Benefiting from the strong built-in electric field of 0.13 V nm-1 in the heterojunction region, the resulting Rashba-type spin-orbit coupling and quantum confinement result in a distinct sinusoidal UMR signal with a nonreciprocal coefficient that is 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298 K. Moreover, this heterostructure configuration enables highly efficient gate tuning of the rectification response, wherein the UMR amplitude is enhanced by 40%. The results of this study advocate the use of narrow-bandgap semiconductor-based hybrid systems with robust spin textures as suitable platforms for the pursuit of controllable chiral spin-orbit applications.

  View details for DOI 10.1002/adma.202207322

  View details for PubMedID 36526594

• Tailoring the magnetic exchange interaction in MnBi₂Te₄ superlattices via the intercalation of ferromagnetic layers NATURE ELECTRONICS Chen, P., Yao, Q., Xu, J., Sun, Q., Grutter, A. J., Quarterman, P., Balakrishnan, P. P., Kinane, C. J., Caruana, A. J., Langridge, S., Li, A., Achinuq, B., Heppell, E., Ji, Y., Liu, S., Cui, B., Liu, J., Huang, P., Liu, Z., Yu, G., Xiu, F., Hesjedal, T., Zou, J., Han, X., Zhang, H., Yang, Y., Kou, X. 2023; 6 (1): 18-27

  View details for DOI 10.1038/s41928-022-00880-1

  View details for Web of Science ID 000898490600001