Bio


Ted received his degrees from the University of California, Berkeley. He then joined the Research and Development Laboratory of Fairchild Semiconductor, where he worked with epitaxial and polycrystalline silicon before moving to Hewlett-Packard Laboratories, where he worked on numerous semiconductor material and device topics. Before moving to Stanford, he was a Principal Scientist at Hewlett-Packard in the Information and Quantum Systems Laboratory, where he conducted research on advanced nanostructured electronic and sensing materials and devices.

Ted is co-author with R. S. Muller of the textbook "Device Electronics for Integrated Circuits" and is author of the book "Polycrystalline Silicon for Integrated Circuits and Displays." He is a Fellow of the IEEE and a Fellow of the Electrochemical Society. He has taught at the University of California, Berkeley, and at Stanford University and has been an Associate Editor of the IEEE Transactions on Electron Devices.

Current Role at Stanford


Consulting Professor, Electrical Engineering

Researcher, Hansen Experimental Physics Laboratory (HEPL)

Academic Appointments


Honors & Awards


  • Fellow, IEEE
  • Fellow, Electrochemical Society

Professional Education


  • PhD, University of California, Berkeley, Electrical Engineering (Solid-State Electronics)
  • MS, University of California, Berkeley, Electrical Engineering
  • BS, University of California, Berkeley, Electrical Engineering

Current Research and Scholarly Interests


Ted is guiding research on epitaxial Si and Ge deposition for optical interconnects and medical sensing, on photodiode arrays for retinal prosthesis, and on other applications of advanced semiconductor processing techniques.

Projects


  • Group IV materials for optical interconnects, Stanford University - Department of Electrical Engineering

    Epitaxial deposition and devices for on-chip optical interconnections for high-performance integrated circuits.

    Location

    Stanford

  • Photovoltaic arrays for retinal prostheses, Stanford University - Departments of Electrical Engineering and Ophthalmology; Hansen Experimental Physics Laboratory

    Design and fabrication silicon photodiode arrays for photovoltaically powered retinal prostheses

    Location

    Stanford

    Collaborators

    • James Harris, James and Elenor Chesebrough Professor in the School of Engineering and Professor, by courtesy, of Materials Science and Engineering and of Applied Physics

Work Experience


  • Prinicipal Scientist, Hewlett-Packard Laboratories

    Location

    Palo Alto, California

  • Member Research Staff, Fairchild Semiconductor, Research and Development Laboratory

    Location

    Palo Alto, California

  • Acting Assistant Professor, University of California, Berkeley

    Location

    Berkeley, California

All Publications


  • Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics NANO LETTERS Chen, R., Gupta, S., Huang, Y., Huo, Y., Rudy, C. W., Sanchez, E., Kim, Y., Kamins, T. I., Saraswat, K. C., Harris, J. S. 2014; 14 (1): 37-43

    Abstract

    We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon. The structure theoretically exhibits many electronic and optical advantages in laser design, and microdisk resonators using these structures can be precisely fabricated away from highly defective regions in the Ge buffer using a novel etch-stop process. Photoluminescence measurements on 2.7 μm diameter microdisks reveal sharp whispering-gallery-mode resonances (Q > 340) with strong luminescence.

    View details for DOI 10.1021/nl402815v

    View details for Web of Science ID 000329586700007

  • Photovoltaic Retinal Prosthesis with High Pixel Density. Nature photonics Mathieson, K., Loudin, J., Goetz, G., Huie, P., Wang, L., Kamins, T. I., Galambos, L., Smith, R., Harris, J. S., Sher, A., Palanker, D. 2012; 6 (6): 391-397

    Abstract

    Retinal degenerative diseases lead to blindness due to loss of the "image capturing" photoreceptors, while neurons in the "image processing" inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm(2), two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 ?m bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density.

    View details for PubMedID 23049619

  • Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition APPLIED PHYSICS LETTERS Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2011; 98 (15)

    View details for DOI 10.1063/1.3574912

    View details for Web of Science ID 000289580800008

  • Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Huo, Y., Lin, H., Chen, R., Makarova, M., Rong, Y., Li, M., Kamins, T. I., Vuckovic, J., Harris, J. S. 2011; 98 (1)

    View details for DOI 10.1063/1.3534785

    View details for Web of Science ID 000286009800012

  • Integration of Self-Assembled Metal-Catalyzed Semiconductor Nanowires for Sensors and Large-Area Electronics IEEE TRANSACTIONS ON ELECTRON DEVICES Kamins, T. I. 2008; 55 (11): 3096-3106
  • Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Kuo, Y., Lee, Y. K., Ge, Y., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2006; 12 (6): 1503-1513
  • Strong quantum-confined Stark effect in germanium quantum-well structures on silicon NATURE Kuo, Y. H., Lee, Y. K., Ge, Y. S., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2005; 437 (7063): 1334-1336

    Abstract

    Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated; but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimetres) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism, which allows modulator structures with only micrometres of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor; such semiconductors often display much weaker optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.

    View details for DOI 10.1038/nature04204

    View details for Web of Science ID 000232829100048

    View details for PubMedID 16251959

  • Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires JOURNAL OF CRYSTAL GROWTH Sharma, S., Kamins, T. I., Islam, M. S., Williams, R. S., Marshall, A. F. 2005; 280 (3-4): 562-568
  • REDUCTION IN MISFIT DISLOCATION DENSITY BY THE SELECTIVE GROWTH OF SI1-XGEX/SI IN SMALL AREAS APPLIED PHYSICS LETTERS Noble, D. B., Hoyt, J. L., King, C. A., Gibbons, J. F., Kamins, T. I., Scott, M. P. 1990; 56 (1): 51-53
  • SMALL-GEOMETRY, HIGH-PERFORMANCE, SI-SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS IEEE ELECTRON DEVICE LETTERS Kamins, T. I., Nauka, K., KRUGER, J. B., Hoyt, J. L., King, C. A., Noble, D. B., GRONET, C. M., Gibbons, J. F. 1989; 10 (11): 503-505
  • MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .2. COMPARISON OF THEORY AND EXPERIMENT JOURNAL OF THE ELECTROCHEMICAL SOCIETY Reif, R., Kamins, T. I., Saraswat, K. C. 1979; 126 (4): 653-660
  • MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .1. THEORY JOURNAL OF THE ELECTROCHEMICAL SOCIETY Reif, R., Kamins, T. I., Saraswat, K. C. 1979; 126 (4): 644-652
  • Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon OPTICS EXPRESS Nam, J. H., Afshinmanesh, F., Nam, D., Jung, W. S., Kamins, T. I., Brongersma, M. L., Saraswat, K. C. 2015; 23 (12): 15816-15823
  • Performance of photovoltaic arrays in-vivo and characteristics of prosthetic vision in animals with retinal degeneration VISION RESEARCH Lorach, H., Goetz, G., Mandel, Y., Lei, X., Kamins, T. I., Mathieson, K., Huie, P., Dalal, R., Harris, J. S., Palanker, D. 2015; 111: 142-148

    Abstract

    Loss of photoreceptors during retinal degeneration leads to blindness, but information can be reintroduced into the visual system using electrical stimulation of the remaining retinal neurons. Subretinal photovoltaic arrays convert pulsed illumination into pulsed electric current to stimulate the inner retinal neurons. Since required irradiance exceeds the natural luminance levels, an invisible near-infrared (915 nm) light is used to avoid photophobic effects. We characterized the thresholds and dynamic range of cortical responses to prosthetic stimulation with arrays of various pixel sizes and with different number of photodiodes. Stimulation thresholds for devices with 140 μm pixels were approximately half those of 70 μm pixels, and with both pixel sizes, thresholds were lower with 2 diodes than with 3 diodes per pixel. In all cases these thresholds were more than two orders of magnitude below the ocular safety limit. At high stimulation frequencies (>20 Hz), the cortical response exhibited flicker fusion. Over one order of magnitude of dynamic range could be achieved by varying either pulse duration or irradiance. However, contrast sensitivity was very limited. Cortical responses could be detected even with only a few illuminated pixels. Finally, we demonstrate that recording of the corneal electric potential in response to patterned illumination of the subretinal arrays allows monitoring the current produced by each pixel, and thereby assessing the changes in the implant performance over time.

    View details for DOI 10.1016/j.visres.2014.09.007

    View details for Web of Science ID 000355961200004

    View details for PubMedID 25255990

  • Photovoltaic restoration of sight with high visual acuity NATURE MEDICINE Lorach, H., Goetz, G., Smith, R., Lei, X., Mandel, Y., Kamins, T., Mathieson, K., Huie, P., Harris, J., Sher, A., Palanker, D. 2015; 21 (5): 476-U254

    Abstract

    Patients with retinal degeneration lose sight due to the gradual demise of photoreceptors. Electrical stimulation of surviving retinal neurons provides an alternative route for the delivery of visual information. We demonstrate that subretinal implants with 70-μm-wide photovoltaic pixels provide highly localized stimulation of retinal neurons in rats. The electrical receptive fields recorded in retinal ganglion cells were similar in size to the natural visual receptive fields. Similarly to normal vision, the retinal response to prosthetic stimulation exhibited flicker fusion at high frequencies, adaptation to static images and nonlinear spatial summation. In rats with retinal degeneration, these photovoltaic arrays elicited retinal responses with a spatial resolution of 64 ± 11 μm, corresponding to half of the normal visual acuity in healthy rats. The ease of implantation of these wireless and modular arrays, combined with their high resolution, opens the door to the functional restoration of sight in patients blinded by retinal degeneration.

    View details for DOI 10.1038/nm.3851

    View details for Web of Science ID 000354068800014

    View details for PubMedID 25915832

  • Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon JOURNAL OF CRYSTAL GROWTH Nam, J. H., Alkis, S., Nam, D., Afshinmanesh, F., Shim, J., Park, J., Brongersma, M., Okyay, A. K., Kamins, T. I., Saraswat, K. 2015; 416: 21-27
  • Microring bio-chemical sensor with integrated low dark current Ge photodetector APPLIED PHYSICS LETTERS Zang, K., Zhang, D., Huo, Y., Chen, X., Lu, C., Fei, E. T., Kamins, T. I., Feng, X., Huang, Y., Harris, J. S. 2015; 106 (10)

    View details for DOI 10.1063/1.4915094

    View details for Web of Science ID 000351397600011

  • Photovoltaic Restoration of Sight with High Visual Acuity in Rats with Retinal Degeneration OPHTHALMIC TECHNOLOGIES XXV Palanker, D., Goetz, G., Lorach, H., Mandel, Y., Smith, R., Boinagrov, D., Lei, X., KAMINS, T., Harris, J., Mathieson, K., Sher, A. 2015; 9307

    View details for DOI 10.1117/12.2081068

    View details for Web of Science ID 000353411700013

  • A New Electro-Absorption Modulator Structure Based on Ge/SiGe Coupled Quantum Wells for On-Chip Optical Interconnects NANOPHOTONICS AND MICRO/NANO OPTICS II Chen, Y., Chen, X., Huo, Y., Lu, C., Fei, E. T., Zang, K., Shang, C., Kang, Y., Jia, J., Kamins, T. I., Harris, J. S. 2014; 9277

    View details for DOI 10.1117/12.2071673

    View details for Web of Science ID 000349393300015

  • Surface-Normal Ge/SiGe Asymmetric Fabry-Perot Optical Modulators Fabricated on Silicon Substrates JOURNAL OF LIGHTWAVE TECHNOLOGY Audet, R. M., Edwards, E. H., Balram, K. C., Claussen, S. A., Schaevitz, R. K., Tasyurek, E., Rong, Y., Fei, E. I., Kamins, T. I., Harris, J. S., Miller, D. A. 2013; 31 (24): 3995-4003
  • Large-scale arrays of nanomechanical sensors for biomolecular fingerprinting SENSORS AND ACTUATORS B-CHEMICAL Guthy, C., Belov, M., Janzen, A., Quitoriano, N. J., Singh, A., Wright, V. A., Finley, E., Kamins, T. I., Evoy, S. 2013; 187: 111-117
  • Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials NATURE COMMUNICATIONS Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Galambos, L., Manivanh, R., Harris, J., Palanker, D. 2013; 4

    View details for DOI 10.1038/ncomms2980

    View details for Web of Science ID 000323624600003

  • Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing JOURNAL OF CRYSTAL GROWTH Chen, R., Huang, Y., Gupta, S., Lin, A. C., Sanchez, E., Kim, Y., Saraswat, K. C., Kamins, T. I., Harris, J. S. 2013; 365: 29-34
  • Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon OPTICS EXPRESS Edwards, E. H., Lever, L., Fei, E. T., Kamins, T. I., Ikonic, Z., Harris, J. S., Kelsall, R. W., Miller, D. A. 2013; 21 (1): 867-876

    Abstract

    We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.

    View details for DOI 10.1364/OE.21.000867

    View details for Web of Science ID 000315988100111

  • Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials. Nature communications Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Galambos, L., Manivanh, R., Harris, J., Palanker, D. 2013; 4: 1980-?

    Abstract

    We have previously developed a wireless photovoltaic retinal prosthesis, in which camera-captured images are projected onto the retina using pulsed near-IR light. Each pixel in the subretinal implant directly converts pulsed light into local electric current to stimulate the nearby inner retinal neurons. Here we report that implants having pixel sizes of 280, 140 and 70 μm implanted in the subretinal space in rats with normal and degenerate retina elicit robust cortical responses upon stimulation with pulsed near-IR light. Implant-induced eVEP has shorter latency than visible light-induced VEP, its amplitude increases with peak irradiance and pulse duration, and decreases with frequency in the range of 2-20 Hz, similar to the visible light response. Modular design of the arrays allows scalability to a large number of pixels, and combined with the ease of implantation, offers a promising approach to restoration of sight in patients blinded by retinal degenerative diseases.

    View details for DOI 10.1038/ncomms2980

    View details for PubMedID 23778557

  • Structural and Optical Properties of Si/Ge Nanowire Heterojunctions GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5 Tsybeskov, L., Chang, H., Mala, S., Kamins, T. I., Wu, X., Lockwood, D. J. 2013; 53 (1): 215-224
  • In-vivo Performance of Photovoltaic Subretinal Prosthesis OPHTHALMIC TECHNOLOGIES XXIII Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Manivanh, R., Harris, J., Palanker, D. 2013; 8567

    View details for DOI 10.1117/12.2001750

    View details for Web of Science ID 000325430800005

  • Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators OPTICS EXPRESS Edwards, E. H., Audet, R. M., Fei, E. T., Claussen, S. A., Schaevitz, R. K., Tasyurek, E., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 20 (28): 29164-29173

    Abstract

    We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.

    View details for Web of Science ID 000314914500005

    View details for PubMedID 23388742

  • Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications OPTICAL MATERIALS EXPRESS Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 2 (10): 1336-1342
  • Photovoltaic retinal prosthesis: implant fabrication and performance JOURNAL OF NEURAL ENGINEERING Wang, L., Mathieson, K., Kamins, T. I., Loudin, J. D., Galambos, L., Goetz, G., Sher, A., Mandel, Y., Huie, P., Lavinsky, D., Harris, J. S., Palanker, D. V. 2012; 9 (4)

    Abstract

    The objective of this work is to develop and test a photovoltaic retinal prosthesis for restoring sight to patients blinded by degenerative retinal diseases. A silicon photodiode array for subretinal stimulation has been fabricated by a silicon-integrated-circuit/MEMS process. Each pixel in the two-dimensional array contains three series-connected photodiodes, which photovoltaically convert pulsed near-infrared light into bi-phasic current to stimulate nearby retinal neurons without wired power connections. The device thickness is chosen to be 30 µm to absorb a significant portion of light while still being thin enough for subretinal implantation. Active and return electrodes confine current near each pixel and are sputter coated with iridium oxide to enhance charge injection levels and provide a stable neural interface. Pixels are separated by 5 µm wide trenches to electrically isolate them and to allow nutrient diffusion through the device. Three sizes of pixels (280, 140 and 70 µm) with active electrodes of 80, 40 and 20 µm diameter were fabricated. The turn-on voltages of the one-diode, two-series-connected diode and three-series-connected diode structures are approximately 0.6, 1.2 and 1.8 V, respectively. The measured photo-responsivity per diode at 880 nm wavelength is ?0.36 A W(-1), at zero voltage bias and scales with the exposed silicon area. For all three pixel sizes, the reverse-bias dark current is sufficiently low (<100 pA) for our application. Pixels of all three sizes reliably elicit retinal responses at safe near-infrared light irradiances, with good acceptance of the photodiode array in the subretinal space. The fabricated device delivers efficient retinal stimulation at safe near-infrared light irradiances without any wired power connections, which greatly simplifies the implantation procedure. Presence of the return electrodes in each pixel helps to localize the current, and thereby improves resolution.

    View details for DOI 10.1088/1741-2560/9/4/046014

    View details for Web of Science ID 000306759600027

    View details for PubMedID 22791690

  • Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by Gamma-valley transport OPTICS EXPRESS Cho, S., Park, B., Yang, C., Cheung, S., Yoon, E., Kamins, T. I., Ben Yoo, S. J., Harris, J. S. 2012; 20 (14): 14921-14927
  • Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by G-valley transport. Optics express Cho, S., Park, B., Yang, C., Cheung, S., Yoon, E., Kamins, T. I., Yoo, S. J., Harris, J. S. 2012; 20 (14): 14921-14927

    Abstract

    Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the ?-valley of germanium.

    View details for DOI 10.1364/OE.20.014921

    View details for PubMedID 22772186

  • Structural and optical characterization of SixGe1-x-ySny alloys grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 100 (14)

    View details for DOI 10.1063/1.3701732

    View details for Web of Science ID 000302567800026

  • Low-temperature growth of Ge1-xSnx thin films with strain control by molecular beam epitaxy THIN SOLID FILMS Lin, H., Chen, R., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 520 (11): 3927-3930
  • Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides IEEE PHOTONICS TECHNOLOGY LETTERS Ren, S., Rong, Y., Claussen, S. A., Schaevitz, R. K., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 24 (6): 461-463
  • Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopy APPLIED PHYSICS LETTERS Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 100 (10)

    View details for DOI 10.1063/1.3692735

    View details for Web of Science ID 000301655500038

  • Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells IEEE JOURNAL OF QUANTUM ELECTRONICS Schaevitz, R. K., Edwards, E. H., Roth, J. E., Fei, E. T., Rong, Y., Wahl, P., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 48 (2): 187-197
  • Intermixing during Ripening in Ge-Si Incoherent Epitaxial Nanocrystals JOURNAL OF PHYSICAL CHEMISTRY C Leite, M. S., Kamins, T. I., Williams, R. S., Medeiros-Ribeiro, G. 2012; 116 (1): 901-907

    View details for DOI 10.1021/jp2092016

    View details for Web of Science ID 000298978700110

  • Light Emission in Ge Quantum Wells 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Fei, E. T., Huo, Y., Shambat, G., Chen, X., Liu, X., Claussen, S. A., Edwards, E. H., Kamins, T. I., Miller, D. A., Vuckovic, J., Harris, J. S. 2012
  • MBE Growth of GeSn and SiGeSn Heterojunctions for Photonic Devices SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES Harris, J. S., Lin, H., Chen, R., Huo, Y., Fei, E., Paik, S., Cho, S., Kamins, T. 2012; 50 (9): 601-605
  • A New Approach to Ge Lasers with Low Pump Power 2012 IEEE PHOTONICS CONFERENCE (IPC) Chen, X., Huo, Y., Fei, E. T., Shambat, G., Zang, K., Liu, X., Chen, Y., Kamins, T. I., Vuckovic, J., Harris, J. S. 2012: 60-61
  • Optical properties of Ge1-zSnz/SixGe1-x-ySny heterostructures 2012 IEEE PHOTONICS CONFERENCE (IPC) Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012: 919-920
  • Photovoltaic retinal prosthesis for restoring sight to the blind: implant design and fabrication MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVII Wang, L., Mathieson, K., Kamins, T. I., Loudin, J., Galambos, L., Harris, J. S., Palanker, D. 2012; 8248

    View details for DOI 10.1117/12.909104

    View details for Web of Science ID 000302640000004

  • Selective-Area Growth of Ge and Ge/SiGe Quantum Wells in 3 mu m Silicon-on-Insulator Waveguides 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. 2012
  • Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation APPLIED PHYSICS LETTERS Cho, S., Kang, I. M., Kamins, T. I., Park, B., Harris, J. S. 2011; 99 (24)

    View details for DOI 10.1063/1.3670325

    View details for Web of Science ID 000298254200065

  • Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Chen, R., Lin, H., Huo, Y., Hitzman, C., Kamins, T. I., Harris, J. S. 2011; 99 (18)

    View details for DOI 10.1063/1.3658632

    View details for Web of Science ID 000296659400025

  • Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator With 20-nm Free-Spectral Range IEEE PHOTONICS TECHNOLOGY LETTERS Cho, S., Chen, R., Koo, S., Shambat, G., Lin, H., Park, N., Vuckovic, J., Kamins, T. I., Park, B., Harris, J. S. 2011; 23 (20)
  • Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., Sun, M., Kim, G., Kamins, T. I., Park, B., Harris, J. S. 2011; 11 (3): 182-189
  • Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium or Germanium Quantum Wells With Silicon-on-Insulator Waveguides IEEE PHOTONICS JOURNAL Ren, S., Kamins, T. I., Miller, D. A. 2011; 3 (4): 739-747
  • Raman study of strained Ge1-xSnx alloys APPLIED PHYSICS LETTERS Lin, H., Chen, R., Huo, Y., Kamins, T. I., Harris, J. S. 2011; 98 (26)

    View details for DOI 10.1063/1.3606384

    View details for Web of Science ID 000292335700027

  • Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon APPLIED PHYSICS LETTERS Cheng, S., Shambat, G., Lu, J., Yu, H., Saraswat, K., Kamins, T. I., Vuckovic, J., Nishi, Y. 2011; 98 (21)

    View details for DOI 10.1063/1.3592837

    View details for Web of Science ID 000291041600001

  • X-ray diffraction analysis of step-graded InxGa1-xAs buffer layers grown by molecular beam epitaxy Lin, H., Huo, Y., Rong, Y., Chen, R., Kamins, T. I., Harris, J. S. ELSEVIER SCIENCE BV. 2011: 17-20
  • Electrical Characteristics of Germanium n(+)/p Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb IEEE ELECTRON DEVICE LETTERS Thareja, G., Cheng, S., Kamins, T., Saraswat, K., Nishi, Y. 2011; 32 (5): 608-610
  • Smooth, 3D Ge transistor channels by heteroepitaxial growth Cho, H. S., Kamins, T. I. ELSEVIER SCIENCE BV. 2011: 351-353
  • Lateral, Ge, nanowire growth on SiO2 NANOTECHNOLOGY Quitoriano, N. J., Kamins, T. I. 2011; 22 (6)

    Abstract

    Vapor-liquid-solid (VLS) nanowires (NWs) typically grow in [111] directions. Previously, the authors have demonstrated guided Si NW growth, engineering the VLS NWs to grow in a [110] direction against a SiO(2) surface. In this work, the authors demonstrate guided high-quality Ge nanowire growth against a SiO(2) surface in the substrate plane to bridge between two Si mesas. The authors explore the interfaces between a Ge NW and the two Si device-layer mesas and report high-quality, epitaxial interfaces between the Ge NW and both Si mesas.

    View details for DOI 10.1088/0957-4484/22/6/065201

    View details for Web of Science ID 000285998900004

    View details for PubMedID 21212486

  • Photovoltaic Retinal Prosthesis OPHTHALMIC TECHNOLOGIES XXI Loudin, J., Mathieson, K., Kamins, T., Wang, L., Galambos, L., Huie, P., Sher, A., Harris, J., Palanker, D. 2011; 7885

    View details for DOI 10.1117/12.876560

    View details for Web of Science ID 000297590500028

  • In situ control of Au-catalyzed chemical vapor deposited (CVD) Ge nanocone morphology by growth temperature variation JOURNAL OF CRYSTAL GROWTH Cho, H. S., Kamins, T. I. 2010; 312 (16-17): 2494-2497
  • Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Rong, Y., Ge, Y., Huo, Y., Fiorentino, M., Tan, M. R., Kamins, T. I., Ochalski, T. J., Huyet, G., Harris, J. S. 2010; 16 (1): 85-92
  • Si-Ge Surface-normal Asymmetric Fabry-Perot Quantum-confined Stark Effect Electroabsorption Modulator 2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY Edwards, E. H., Audet, R. M., Rong, Y., Claussen, S. A., Schaevitz, R. K., Tasyuerek, E., Ren, S., Kamins, T. I., Harris, J. S., Miller, D. A., Dosunmu, O. I., Uenlue, M. S. 2010: 514-515
  • MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift 2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) Huo, Y., Chen, R., Lin, H., Kamins, T. I., Harris, J. S. 2010: 344-346
  • Integration of Germanium Quantum Well Structures on a Silicon-on-Insulator Waveguide Platform for Optical Modulator Applications 2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2010: 60-62
  • High Performance Germanium N-MOSFET with Antimony Dopant Activation Beyond 1x10(20) cm(-3) 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST Thareja, G., Liang, J., Chopra, S., Adams, B., Patil, N., Cheng, S., Nainani, A., Tasyurek, E., Kim, Y., Moffatt, S., Brennan, R., McVittie, J., KAMINS, T., Saraswat, K., Nishi, Y. 2010
  • Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions APPLIED PHYSICS LETTERS Chang, H., Tsybeskov, L., Sharma, S., Kamins, T. I., Wu, X., Lockwood, D. J. 2009; 95 (13)

    View details for DOI 10.1063/1.3240595

    View details for Web of Science ID 000270458000066

  • Silicon-germanium nanostructures for on-chip optical interconnects APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Tsybeskov, L., Lee, E., Chang, H., Lockwood, D. J., Baribeau, J., Wu, X., Kamins, T. I. 2009; 95 (4): 1015-1027
  • Photoluminescence dynamics and Auger fountain in three-dimensional Si/SiGe multilayer nanostructures PHYSICAL REVIEW B Lee, E., Lockwood, D. J., Baribeau, J., Bratkovsky, A. M., Kamins, T. I., Tsybeskov, L. 2009; 79 (23)
  • Guiding vapor-liquid-solid nanowire growth using SiO2 NANOTECHNOLOGY Quitoriano, N. J., Wu, W., Kamins, T. I. 2009; 20 (14)

    Abstract

    Vapor-liquid-solid (VLS) grown nanowires (NWs) typically grow in [Formula: see text] directions. In this work, using guiding structures, we effectively grow Si NWs with diameters between 20 and 100 nm in both [001] and <110> directions by guiding the Si NW growth using SiO(2) surfaces. Using one structure, we demonstrate NW growth in the substrate plane, against the buried oxide layer of a standard, (001) silicon-on-insulator wafer. Using the other structure, we demonstrate NW growth perpendicular to a (001) substrate. We show that the VLS growth mechanism is the same as unconstrained NW growth, with the NWs still growing by the addition of {111} planes. We show that when the guiding surface is removed, the NW grows in its natural growth direction because the growth mechanism has not changed. We speculate that NW growth can be guided with a range of materials, the most suitable being those that are amorphous and those which are nearly immiscible both with the catalyst and with the NW material.

    View details for DOI 10.1088/0957-4484/20/14/145303

    View details for Web of Science ID 000264539500007

    View details for PubMedID 19420522

  • Single-Crystal, Si Nanotubes, and Their Mechanical Resonant Properties NANO LETTERS Quitoriano, N. J., Belov, M., Evoy, S., Kamins, T. I. 2009; 9 (4): 1511-1516

    Abstract

    Single-crystalline Si nanotubes (NTs) were fabricated using vapor-liquid-solid grown, Ge nanowires (NWs) as a template upon which a Si shell was deposited to first grow Ge-core, Si-shell NWs. The tips of these NWs were removed, enabling exposure of the Ge core to H(2)SO(4) and H(2)O(2). After removing the Ge core, single-crystalline Si NTs remained. In addition to growing these Ge-core, Si-shell NWs from a Si (111) substrate, these NWs were also grown horizontally from a vertical Si surface to enable the fabrication of horizontal NTs after focused ion-beam cutting and etching steps. The resonant properties of the Ge-core, Si-shell NW, and the Si NT after the cutting and etching steps were measured and found to have a quality factor, Q, of approximately 1800.

    View details for DOI 10.1021/nl803565q

    View details for Web of Science ID 000265030000043

    View details for PubMedID 19271766

  • Control of Ge/Si intermixing during Ge island growth APPLIED PHYSICS LETTERS Leite, M. S., Kamins, T. I., Medeiros-Ribeiro, G. 2009; 94 (5)

    View details for DOI 10.1063/1.3078289

    View details for Web of Science ID 000263167000066

  • Direct Band Gap Tensile-Strained Germanium 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 Huo, Y., Lin, H., Rong, Y., Makarova, M., Kamins, T. I., Vuckovic, J., Harris, J. S. 2009: 824-825
  • Temperature-dependent Auger recombination dynamics in luminescent silicon nanowires PHYSICAL REVIEW B Guichard, A. R., Kekatpure, R. D., Brongersma, M. L., Kamins, T. I. 2008; 78 (23)
  • Integratable Nanowire Transistors NANO LETTERS Quitoriano, N. J., Kamins, T. I. 2008; 8 (12): 4410-4414

    Abstract

    We report a structure to control nanowire location and growth direction and demonstrate top-gated, metal-oxide-semiconductor, field-effect transistors (MOSFETs) using this structure. The nanowires wereengineered to grow against an oxide surface of a (001), silicon-on-insulator substrate, enabling straightforward fabrication of MOSFETs exhibiting an Io/Ioff ratio approximately 104 and a subthreshold slope of approximately 155 mV/decade. Though nanowires were engineered to grow in (110) directions, the nanowires still grew by the addition of {111) planes.

    View details for DOI 10.1021/nl802292h

    View details for Web of Science ID 000261630700056

    View details for PubMedID 19367850

  • Evolution of thermodynamic potentials in closed and open nanocrystalline systems: Ge-Si : Si(001) islands PHYSICAL REVIEW LETTERS Leite, M. S., Malachias, A., Kycia, S. W., Kamins, T. I., Williams, R. S., Medeiros-Ribeiro, G. 2008; 100 (22)

    Abstract

    An open (closed) system, in which matter is (not) exchanged through surface diffusion, was realized via growth kinetics. Epitaxially grown Si-Ge:Si (001) islands were annealed in different environments affecting the diffusivity of Si adatoms selectively. The evolution of the driving forces for intermixing while approaching the equilibrium was inferred from Synchrotron x-ray measurements of composition and strain. For the open system, intermixing due to the Si inflow from the wetting layer (reservoir) caused a decrease in the Ge content, leading to a lowering of the elastic energy and an increase in the mixing entropy. In contrast, for the closed system, while keeping the average Ge composition constant, atom rearrangement within the islands led to an increase in both elastic and entropic contributions. The Gibbs free energy decreased in both cases, despite the different evolution paths for the composition profiles.

    View details for DOI 10.1103/PhysRevLett.100.226101

    View details for Web of Science ID 000256528400028

    View details for PubMedID 18643432

  • Mechanical resonance of clamped silicon nanowires measured by optical interferometry JOURNAL OF APPLIED PHYSICS Belov, M., Quitoriano, N. J., Sharma, S., Hiebert, W. K., Kamins, T. I., Evoy, S. 2008; 103 (7)

    View details for DOI 10.1063/1.2891002

    View details for Web of Science ID 000255043200088

  • An organic/Si nanowire hybrid field configurable transistor NANO LETTERS Lai, Q., Li, Z., Zhang, L., Li, X., Stickle, W. F., Zhu, Z., Gu, Z., Kamins, T. I., Williams, R. S., Chen, Y. 2008; 8 (3): 876-880

    Abstract

    We report a field configurable transistor (FCT) fabricated on a Si nanowire FET platform by integrating a thin film of conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) and an ionic conductive layer (RbAg4I5) into the gate. The FCT can be precisely configured to desired nonvolatile analog state dynamically, repeatedly, and reversibly by controlling the concentration of iodide ions in the MEH-PPV layer with a gate voltage. The flexible configurability and plasticity of the FCT could facilitate field-programmable circuits for defect-tolerance and synapse-like devices for learning.

    View details for DOI 10.1021/nl073112y

    View details for Web of Science ID 000253947400020

    View details for PubMedID 18266332

  • Photoluminescence thermal quenching in three-dimensional multilayer Si/SiGe nanostructures APPLIED PHYSICS LETTERS Lee, E., Tsybeskov, L., Kamins, T. I. 2008; 92 (3)

    View details for DOI 10.1063/1.2837184

    View details for Web of Science ID 000252718600058

  • C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing ELECTRONICS LETTERS Roth, J. E., Fidaner, O., Edwards, E. H., Schaevitz, R. K., Kuo, Y., Helman, N. C., Kamins, T. I., Harris, J. S., Miller, D. A. 2008; 44 (1): 49-U63
  • Using pn junction depletion regions to position epitaxial nanowires JOURNAL OF APPLIED PHYSICS Quitoriano, N. J., Kamins, T. I. 2007; 102 (4)

    View details for DOI 10.1063/1.2770820

    View details for Web of Science ID 000249156200108

  • Carrier transport in Ge nanowire/Si substrate heterojunctions JOURNAL OF APPLIED PHYSICS Lee, E., Kamenev, B. V., Tsybeskov, L., Sharma, S., Kamins, T. I. 2007; 101 (10)

    View details for DOI 10.1063/1.2730558

    View details for Web of Science ID 000246891500124

  • Nano-graphoepitaxy of semiconductors for 3D integration Crnogorac, F., Witte, D. J., Xia, Q., Rajendran, B., Pickard, D. S., Liu, Z., Mehta, A., Sharma, S., Yasseri, A., Kamins, T. I., Chou, S. Y., Pease, R. F. ELSEVIER SCIENCE BV. 2007: 891-894
  • Optical modulator on silicon employing germanium quantum wells OPTICS EXPRESS Roth, J. E., Fidaner, O., Schaevitz, R. K., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2007; 15 (9): 5851-5859

    Abstract

    We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers. The peak contrast ratio is 7.3 dB at 1457 nm for a 10 V swing, and exceeds 3 dB from 1441 nm to 1461 nm. The novel side-entry structure employs an asymmetric Fabry-Perot resonator at oblique incidence. Unlike waveguide modulators, the design is insensitive to positional misalignment, maintaining > 3 dB contrast while translating the incident beam 87 mum and 460 mum in orthogonal directions. Since the optical ports are on the substrate edges, the wafer top and bottom are left free for electrical interconnections and thermal management.

    View details for Web of Science ID 000246395000064

    View details for PubMedID 19532843

  • Alloying mechanisms for epitaxial nanocrystals PHYSICAL REVIEW LETTERS Leite, M. S., Medeiros-Ribeiro, G., Kamins, T. I., Williams, R. S. 2007; 98 (16)

    Abstract

    The different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this Letter. Intermixing during growth, surface diffusion, and intraisland diffusion were investigated by varying the growth conditions and annealing environments during chemical vapor deposition. The relative importance of each mechanism was evaluated in determining a particular composition profile for dome-shaped Ge:Si (001) islands. For samples grown at a faster rate, intermixing during growth was reduced. Si surface diffusion dominates during H2 annealing, whereas Ge surface diffusion and intraisland diffusion prevail during annealing in a PH3 environment.

    View details for DOI 10.1103/PhysRevLett.98.165901

    View details for Web of Science ID 000245871200037

    View details for PubMedID 17501431

  • Quantized field-electron emission at 300 K in self-assembled arrays of silicon nanowires PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Khmovskaya, A. I., Ralchev, O. E., Dadykin, A. A., Litvin, Y. M., Lytvyn, P. M., Prokopenko, I. V., Kamins, T. I., Sharma, S., Moklyak, Y. 2007; 37 (1-2): 212-217
  • The quantum confined Stark effect in Ge/SiGe quantum wells: An efficient electroabsorption mechanism for silicon-based applications 2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS Roth, J. E., Fidaner, O., Schaevitz, R. K., Edwards, E. H., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2007: 178-180
  • Photolumineseence excitation dependence in three-dimensional Si/SiGe nanostructures GROUP IV SEMICONDUCTOR NANOSTRUCTURES-2006 Lee, E., Kamenev, B. V., Kamins, T. I., Baribeau, J., Lockwood, D. J., Tsybeskov, L. 2007; 958: 63-68
  • Electronic structure and energies of interatomic bonds in the TiSi2 compound with a C49 crystal structure PHYSICS OF THE SOLID STATE Shanina, B. D., Grigor'ev, N. N., Klimovskaya, A. I., Kamins, T. I. 2007; 49 (1): 39-45
  • Silicon-germanium interdiffusion and interfaces in self-assembled quantum dots APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Vanfleet, R. R., Basile, D. P., Kamins, T. I., Silcox, J., Williams, R. S. 2007; 86 (1): 1-9
  • Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering Kamins, T. I., Yasseri, A. A., Sharma, S., Pease, R. F., Xia, Q., Chou, S. Y. ELSEVIER SCI LTD. 2006: 1481-1485
  • Alkylsiloxane self-assembled monolayer formation guided by nanoimprinted Si and SiO2 templates APPLIED PHYSICS LETTERS Yasseri, A. A., Sharma, S., Kamins, T. I., Xia, Q., Chou, S. Y., Pease, R. F. 2006; 89 (15)

    View details for DOI 10.1063/1.2360920

    View details for Web of Science ID 000241247900113

  • Excitation-dependent photoluminescence in Ge/Si Stranski-Krastanov nanostructures APPLIED PHYSICS LETTERS Kamenev, B. V., Lee, E., Chang, H., Han, H., Grebel, H., Tsybeskov, L., Kamins, T. I. 2006; 89 (15)

    View details for DOI 10.1063/1.2361198

    View details for Web of Science ID 000241247900098

  • InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition APPLIED PHYSICS LETTERS Yi, S. S., Girolami, G., Amano, J., Islam, M. S., Sharma, S., Kamins, T. I., Kimukin, I. 2006; 89 (13)

    View details for DOI 10.1063/1.2357890

    View details for Web of Science ID 000240875800121

  • Tunable light emission from quantum-confined excitons in TiSi2-catalyzed silicon nanowires NANO LETTERS Guichard, A. R., Barsic, D. N., Sharma, S., Kamins, T. I., Brongersma, M. L. 2006; 6 (9): 2140-2144

    Abstract

    Visible and near-infrared photoluminescence (PL) at room temperature is reported from Si nanowires (NWs) grown by chemical vapor deposition from TiSi2 catalyst sites. NWs grown with average diameter of 20 nm were etched and oxidized to thin and passivate the wires. The PL emission blue shifted continuously with decreasing nanowire diameter. Slowed oxidation was observed for small nanowire diameters and provides a high degree of control over the emission wavelength. Transmission electron microscopy, PL, and time-resolved PL data are fully consistent with quantum confinement of charge carriers in the Si nanowire core being the source of luminescence. These light emitting nanowires could find application in future CMOS-compatible photonic devices.

    View details for DOI 10.1021/nl061287m

    View details for Web of Science ID 000240465100054

    View details for PubMedID 16968040

  • Noise in silicon nanowires IEEE TRANSACTIONS ON NANOTECHNOLOGY Reza, S., Bosman, G., Islam, A. S., Kamins, T. I., Sharma, S., Williams, R. S. 2006; 5 (5): 523-529
  • Field-electron emission at 300 K in self-assembled arrays of silicon nanowires APPLIED PHYSICS LETTERS Klimovskaya, A. I., Litvin, Y. M., Moklyak, Y. Y., Dadykin, A. A., Kamins, T. I., Sharma, S. 2006; 89 (9)

    View details for DOI 10.1063/1.2337279

    View details for Web of Science ID 000240236600112

  • Formation and characterization of long-chained alkylsiloxane self-assembled monolayers on atomic-layer-deposited aluminum oxide surfaces APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Yasseri, A. A., Kobayashi, N. P., Kamins, T. I. 2006; 84 (1-2): 1-5
  • Metal-catalysed, bridging nanowires as vapour sensors and concept for their use in a sensor system NANOTECHNOLOGY Kamins, T. I., Sharma, S., Yasseri, A. A., Li, Z., Straznicky, J. 2006; 17 (11): S291-S297
  • A generalized description of the elastic properties of nanowires NANO LETTERS Heidelberg, A., Ngo, L. T., Bin Wu, B., Phillips, M. A., Sharma, S., Kamins, T. I., Sader, J. E., Boland, J. J. 2006; 6 (6): 1101-1106

    Abstract

    We report a model of nanowire (NW) mechanics that describes force vs displacement curves over the entire elastic range for diverse wire systems. Due to the clamped-wire measurement configuration, the force response in the linear elastic regime can be linear or nonlinear, depending on the system and the wire displacement. For Au NWs the response is essentially linear since yielding occurs prior to the onset of the inherent nonlinearity, while for Si NWs the force response is highly nonlinear, followed by brittle fracture. Since the method describes the entire range of elastic deformation, it unequivocally identifies the yield points in both of these materials.

    View details for DOI 10.1021/nl060028u

    View details for Web of Science ID 000238258300005

    View details for PubMedID 16771561

  • Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Yasseri, A. A., Sharma, S., Kamins, T. I., Li, Z., Williams, R. S. 2006; 82 (4): 659-664
  • Surface charge density of unpassivated and passivated metal-catalyzed silicon nanowires ELECTROCHEMICAL AND SOLID STATE LETTERS Seo, K. I., Sharma, S., Yasseri, A. A., Stewart, D. R., Kamins, T. I. 2006; 9 (3): G69-G72

    View details for DOI 10.1149/1.2159295

    View details for Web of Science ID 000235479500029

  • Electroless deposition of Au nanocrystals on Si(111) surfaces as catalysts for epitaxial growth of Si nanowires ELECTROCHEMICAL AND SOLID STATE LETTERS Yasseri, A. A., Sharma, S., Jung, G. Y., Kamins, T. I. 2006; 9 (12): C185-C188

    View details for DOI 10.1149/1.2349669

    View details for Web of Science ID 000241586200012

  • Light emitting silicon nanowires for photonic device applications 2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS Guichard, A. R., Brongersma, M. L., Kamins, T., Sharma, S. 2006: 137-139
  • Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire-substrate heterointerfaces PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Kamenev, B. V., Sharma, V., Tsybeskov, L., Kamins, T. I. 2005; 202 (14): 2753-2758
  • Mechanical properties of self-welded silicon nanobridges APPLIED PHYSICS LETTERS Tabib-Azar, M., Nassirou, M., Wang, R., Sharma, S., Kamins, T. I., Islam, M. S., Williams, R. S. 2005; 87 (11)

    View details for DOI 10.1063/1.2042549

    View details for Web of Science ID 000231802200046

  • Arsenic surface segregation during in situ doped silicon and Si1-xGex molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH Liu, X., Tang, Q., Harris, J. S., Kamins, T. I. 2005; 281 (2-4): 334-343
  • A novel interconnection technique for manufacturing nanowire devices APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Islam, M. S., Sharma, S., Kamins, T. I., Williams, R. S. 2005; 80 (6): 1133-1140
  • Elastic energy mapping of epitaxial nanocrystals APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Medeiros-Ribeiro, G., Malachias, A., Kycia, S., Magalhaes-Paniago, R., Kamins, T. I., Williams, R. S. 2005; 80 (6): 1211-1214
  • Silicon nanowires for sequence-specific DNA sensing: device fabrication and simulation APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Li, Z., Rajendran, B., Kamins, T. I., Li, X., Chen, Y., Williams, R. S. 2005; 80 (6): 1257-1263
  • Annealing of chemically vapor deposited nanoscale Ti-Si islands on Si APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Kamins, T. I., Williams, R. S., Ohlberg, D. A. 2005; 80 (6): 1279-1286
  • Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Sharma, S., Kamins, T. I., Williams, R. S. 2005; 80 (6): 1225-1229
  • In situ p-n junctions and gated devices in titanium-silicide nucleated Si nanowires ELECTROCHEMICAL AND SOLID STATE LETTERS Tang, Q., Kamins, T. I., Liu, X., Grupp, D. E., Harris, J. S. 2005; 8 (8): G204-G208
  • Optical properties of Ge nanowires grown on silicon (100) and (111) substrates GROUP-IV SEMICONDUCTOR NANOSTRUCTURES Sharma, V., Kamenev, B. V., Tsybeskov, L., Kamins, T. I. 2005; 832: 329-334
  • Carrier transport in one-dimensional Ge nanowires/Si substrate heterojunctions GROUP-IV SEMICONDUCTOR NANOSTRUCTURES Lee, E. K., Kamenev, B. V., Forsh, P. A., Kamins, T. I., Tsybeskov, L. 2005; 832: 335-340
  • Chemical and biological sensing based on the surface photovoltage measurement of the Si surface potential barrier. PHYSICS OF SEMICONDUCTORS, PTS A AND B Nauka, K., Li, Z. Y., Kamins, T. I. 2005; 772: 1577-1578
  • Self-assembled semiconductor nanowires on silicon and insulating substrates: Experimental behavior SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES OPERATING IN A HARSH ENVIRONMENT Kamins, T. I., Sharma, S., Islam, M. S. 2005; 185: 327-332
  • Surface photovoltage in silicon. Novel applications for chemical and biological sensing MATERIALS SCIENCE-POLAND Nauka, K., Li, Z., Kamins, T. I. 2005; 23 (3): 653-661
  • Growth and characterization of SiGe layers on Ge-lattice-matched substrates by MBE for long wavelength optical devices 2005 CONFERENCE ON LASERS & ELECTRO-OPTICS (CLEO), VOLS 1-3 Kuo, Y. H., Yu, X., Fu, J., Solomon, G. S., Harris, J. S., Kamins, T. I. 2005: 2137-2139
  • Deposition and structure of chemically vapor deposited nanoscale Ti-Si islands on Si JOURNAL OF APPLIED PHYSICS Kamins, T. I., Ohlberg, D. A., Williams, R. S. 2004; 96 (9): 5195-5201

    View details for DOI 10.1063/1.1789626

    View details for Web of Science ID 000224799300073

  • Diameter control of Ti-catalyzed silicon nanowires JOURNAL OF CRYSTAL GROWTH Sharma, S., Kamins, T. I., Williams, R. S. 2004; 267 (3-4): 613-618
  • Chlorination of Si surfaces with gaseous hydrogen chloride at elevated temperatures SURFACE SCIENCE Li, Z. Y., Kamins, T. I., Li, X. M., Williams, R. S. 2004; 554 (1): L81-L86
  • Growth and structure of chemically vapor deposited Ge nanowires on Si substrates NANO LETTERS Kamins, T. I., Li, X., Williams, R. S. 2004; 4 (3): 503-506

    View details for DOI 10.1021/nl035166n

    View details for Web of Science ID 000220170600023

  • Sequence-specific label-free DNA sensors based on silicon nanowires NANO LETTERS Li, Z., Chen, Y., Li, X., Kamins, T. I., Nauka, K., Williams, R. S. 2004; 4 (2): 245-247

    View details for DOI 10.1021/nl034958e

    View details for Web of Science ID 000188965700010

  • Annealing of phosphorus-doped Ge islands on Si(001) JOURNAL OF APPLIED PHYSICS Kamins, T. I., Medeiros-Ribeiro, G., Ohlberg, D. A., Williams, R. S. 2004; 95 (3): 1562-1567

    View details for DOI 10.1063/1.1635994

    View details for Web of Science ID 000188281800115

  • Sequence-specific DNA sensing based on silicon nanowires NANOSENSING: MATERIALS AND DEVICES Li, Z. Y., Li, X. M., Kamins, T. I., Chen, Y., Williams, R. S. 2004; 5593: 215-221

    View details for DOI 10.1117/12.570817

    View details for Web of Science ID 000226789700023

  • Self-assembled silicon nano-bridges as an enabler for nanosensors 2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY Kamins, T. I., Islam, M. S., Sharma, S., Williams, R. S. 2004: 143-145
  • Nano-bridging: A massively parallel self-assembly technique for interconnecting nanowire sensors NANOSENSING: MATERIALS AND DEVICES Islam, M. S., Sharma, S., Kamins, T. I., Williams, R. S. 2004; 5593: 101-111

    View details for DOI 10.1117/12.569745

    View details for Web of Science ID 000226789700012

  • Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures APPLIED PHYSICS LETTERS Kamenev, B. V., Grebel, H., Tsybeskov, L., Kamins, T. I., Williams, R. S., Baribeau, J. M., Lockwood, D. J. 2003; 83 (24): 5035-5037

    View details for DOI 10.1063/1.1628403

    View details for Web of Science ID 000187181400047

  • 3D composition of epitaxial nanocrystals by anomalous x-ray diffraction: Observation of a Si-rich core in Ge domes on Si(100) PHYSICAL REVIEW LETTERS Malachias, A., Kycia, S., Medeiros-Ribeiro, G., Magalhaes-Paniago, R., Kamins, T. I., Williams, R. S. 2003; 91 (17)

    Abstract

    Three-dimensional composition maps of nominally pure Ge domes grown on Si(001) at 600 degrees C were obtained from grazing incidence anomalous x-ray scattering data at the Ge K edge. The data were analyzed in terms of a stack of layers with laterally varying concentration. The results demonstrated that the domes contained a Si-rich core covered by a Ge-rich shell and were independently supported by selective etch experiments. The composition profile resulted from substrate Si alloying into the Ge during growth to partially relax the stress in and under the domes.

    View details for DOI 10.1103/PhysRevLett.91.176101

    View details for Web of Science ID 000186138300032

    View details for PubMedID 14611360

  • Influence of phosphine on Ge/Si(001) island growth by chemical vapor deposition JOURNAL OF APPLIED PHYSICS Kamins, T. I., Medeiros-Ribeiro, G., Ohlberg, D. A., Williams, R. S. 2003; 94 (6): 4215-4224

    View details for DOI 10.1063/1.1604957

    View details for Web of Science ID 000185419600081

  • Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBE Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 662-665
  • Heavy arsenic doping of silicon by molecular beam epitaxy Liu, X., Tang, Q., Kamins, T. I., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 651-656
  • Thermal stability of Ti-catalyzed Si nanowires APPLIED PHYSICS LETTERS Kamins, T. I., Li, X., Williams, R. S. 2003; 82 (2): 263-265

    View details for DOI 10.1063/1.1534616

    View details for Web of Science ID 000180317400037

  • Effect of phosphorus on Ge/Si(001) island formation QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES Kamins, T. I., Medeiros-Ribeiro, G., Ohlberg, D. A., Williams, R. S. 2003; 737: 321-327
  • Anomalous x-ray scattering on self-assembled islands: Direct evaluation of composition profile, strain relaxation, and elastic energy QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES Malachias, A., Magalhaes-Paniago, R., Medeiros-Ribeiro, G., Kycia, S., Kamins, T. I., Williams, R. S. 2003; 737: 329-338
  • Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge : Si(001) self-assembled islands by anomalous x-ray scattering PHYSICAL REVIEW B Magalhaes-Paniago, R., Medeiros-Ribeiro, G., Malachias, A., Kycia, S., Kamins, T. I., Williams, R. S. 2002; 66 (24)
  • Twinning in TiSi2-island catalyzed Si nanowires grown by gas-source molecular-beam epitaxy APPLIED PHYSICS LETTERS Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. 2002; 81 (13): 2451-2453

    View details for DOI 10.1063/1.1509096

    View details for Web of Science ID 000178037600045

  • Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates Kamins, T. I., Williams, R. S., Hesjedal, T., Harris, J. S. ELSEVIER SCIENCE BV. 2002: 995-998
  • Effect of phosphorus on Ge/Si(001) island formation PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Kamins, T. I., Medeiros-Ribeiro, G., Ohlberg, D. A., Williams, R. S. 2002; 13 (2-4): 974-977
  • Ti-island-catalyzed Si nanowire growth by gas-source MBE: Morphology and twinning FUNCTIONAL NANOSTRUCTURED MATERIALS THROUGH MULTISCALE ASSEMBLY AND NOVEL PATTERNING TECHNIQUES Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. 2002; 728: 235-240
  • Effect of self-assembled Ge nanostructures on Si surface electronic properties APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Kamins, T. I., Nauka, K., Williams, R. S. 2001; 73 (1): 1-9
  • Effect of phosphorus on Ge/Si(001) island formation APPLIED PHYSICS LETTERS Kamins, T. I., Ohlberg, D. A., Williams, R. S. 2001; 78 (15): 2220-2222
  • Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms JOURNAL OF APPLIED PHYSICS Kamins, T. I., Williams, R. S., Basile, D. P., Hesjedal, T., Harris, J. S. 2001; 89 (2): 1008-1016
  • Modification of the Si surface electronic properties by Ge nanostructures: Surface photovoltage studies PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II Nauka, K., Kamins, T. I. 2001; 87: 305-306
  • Self-assembled TiSix nanostructures formed by chemical vapor deposition QUANTUM CONFINEMENT VI: NANOSTRUCTURED MATERIALS AND DEVICES Kamins, T. I., Ohlberg, D. A., Williams, R. S. 2001; 2001 (19): 157-160
  • Dome-to-pyramid shape transition in Ge/Si islands due to strain relaxation by interdiffusion APPLIED PHYSICS LETTERS Henstrom, W. L., Liu, C. P., Gibson, J. M., Kamins, T. I., Williams, R. S. 2000; 77 (11): 1623-1625
  • The incommensurate nature of epitaxial titanium disilicide islands on Si(001) SURFACE SCIENCE Briggs, G. A., Basile, D. P., Medeiros-Ribeiro, G., Kamins, T. I., Ohlberg, D. A., Williams, R. S. 2000; 457 (1-2): 147-156
  • Interaction of self-assembled Ge islands and adjacent Si layers grown on unpatterned and patterned Si(001) substrates JOURNAL OF ELECTRONIC MATERIALS Kamins, T. I., Basile, D. P. 2000; 29 (5): 570-575
  • Strain evolution in coherent Ge/Si islands PHYSICAL REVIEW LETTERS Liu, C. P., Gibson, J. M., Cahill, D. G., Kamins, T. I., Basile, D. P., Williams, R. S. 2000; 84 (9): 1958-1961
  • Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si APPLIED PHYSICS LETTERS Kamins, T. I., Williams, R. S., Chen, Y., Chang, Y. L., Chang, Y. A. 2000; 76 (5): 562-564
  • Thermodynamics of the size and shape of nanocrystals: Epitaxial Ge on Si(001) ANNUAL REVIEW OF PHYSICAL CHEMISTRY Williams, R. S., Medeiros-Ribeiro, G., Kamins, T. I., Ohlberg, D. A. 2000; 51: 527-?

    Abstract

    The growth and evolution of strained epitaxial Ge on a Si(001) surface provides a rich system for exploring the behavior of strongly interacting nanocrystals. In the temperature regime above 500 degrees C, there are two different (metastable) shapes of defect-free nanocrystals, termed pyramids and domes, that dominate the system depending on the temperature of the substrate during growth and the amount of Ge deposited. In contrast to the usual case considered in nucleation theory, the relaxation of the strain energy at the surface of the nanocrystals makes those surfaces stabilizing, i.e. the surface contribution to the free energy of the Ge nanocrystals is negative. Given that the edges of the nanocrystals are destabilizing (positive free energy), the interaction of the surfaces and edges of the nanocrystals in an ensemble renders an internal free energy for the system that has a local minimum with respect to the size (volume) of the nanocrystal. At finite temperatures, this free energy yields a size distribution with a characteristic centroid, width, and skewness for each nanocrystal shape. The smaller pyramids transform into domes when they grow to the point where they can surmount a kinetic energy barrier between the two structures. However, the Ge nanocrystals also effectively repel one another strongly via the strain fields that are produced in the Si substrate. This repulsive interaction makes the ensemble of Ge nanocrystals a highly nonideal thermodynamic system and, in turn, makes the free energies of the nanocrystals a function of their number density, or equivalently a function of the amount of Ge deposited. The interplay of the stabilizing effect of the nanocrystal surfaces and the destabilizing influence of their repulsive interactions yields a complex behavior for the nanocrystal-size distributions that can nonetheless be modeled using simple thermodynamic expressions.

    View details for Web of Science ID 000165670900020

    View details for PubMedID 11031292

  • Equilibrium size distributions of clusters during strained epitaxial growth MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Medeiros-Ribeiro, G., Kamins, T. I., Ohlberg, D. A., Williams, R. S. 1999; 67 (1-2): 31-38
  • Deep state defects in strained and relaxed epitaxial Si1-xGex on Si introduced by 3d transition metal and 5d noble metal impurities PHYSICA B-CONDENSED MATTER Nauka, K., Kamins, T. I. 1999; 273-4: 603-607
  • Direct measurement of strain in a Ge island on Si(001) APPLIED PHYSICS LETTERS Miller, P. D., Liu, C. P., Henstrom, W. L., Gibson, J. M., Huang, Y., Zhang, P., Kamins, T. I., Basile, D. P., Williams, R. S. 1999; 75 (1): 46-48
  • Self-aligning of self-assembled Ge islands on Si(001) NANOTECHNOLOGY Kamins, T. I., Williams, R. S., Basile, D. P. 1999; 10 (2): 117-121
  • Chemical thermodynamics of the size and shape of strained Ge nanocrystals grown of Si(001) ACCOUNTS OF CHEMICAL RESEARCH Williams, R. S., Medeiros-Ribeiro, G., Kamins, T. I., Ohlberg, D. A. 1999; 32 (5): 425-433
  • Surface photovoltage measurement of hydrogen-treated Si surfaces JOURNAL OF THE ELECTROCHEMICAL SOCIETY Nauka, K., Kamins, T. I. 1999; 146 (1): 292-295
  • Effect of hydrogen on p-type epitaxial silicon sheet-resistance measurements ELECTROCHEMICAL AND SOLID STATE LETTERS Kamins, T. I., Nauka, K. 1998; 1 (2): 100-101
  • Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures JOURNAL OF APPLIED PHYSICS Kamins, T. I., CARR, E. C., Williams, R. S., Rosner, S. J. 1997; 81 (1): 211-219
  • A MONOLITHIC GAAS-ON-SI RECEIVER FRONT-END FOR OPTICAL INTERCONNECT SYSTEMS IEEE JOURNAL OF SOLID-STATE CIRCUITS Nasserbakht, G. N., ADKISSON, J. W., Wooley, B. A., Harris, J. S., Kamins, T. I. 1993; 28 (6): 622-630
  • COMPARISON OF BORON-DIFFUSION IN SI AND STRAINED SI1-XGEX EPITAXIAL LAYERS APPLIED PHYSICS LETTERS Kuo, P., Hoyt, J. L., Gibbons, J. F., Turner, J. E., JACOWITZ, R. D., Kamins, T. I. 1993; 62 (6): 612-614
  • ELECTRICAL CHARACTERISTICS OF DIODES FABRICATED IN SELECTIVE SI/SI1-XGEX EPITAXIAL LAYERS JOURNAL OF ELECTRONIC MATERIALS Kamins, T. I., Nauka, K., JACOWITZ, R. D., Hoyt, J. L., Noble, D. B., Gibbons, J. F. 1992; 21 (8): 817-824
  • ELECTRICAL AND STRUCTURAL-PROPERTIES OF DIODES FABRICATED IN THICK, SELECTIVELY DEPOSITED SI/SI1-XGEX EPITAXIAL LAYERS IEEE ELECTRON DEVICE LETTERS Kamins, T. I., Nauka, K., JACOWITZ, R. D., Hoyt, J. L., Noble, D. B., Gibbons, J. F. 1992; 13 (4): 177-179
  • ADMITTANCE SPECTROSCOPY MEASUREMENTS OF BAND OFFSETS IN SI/SI1-XGEX/SI HETEROSTRUCTURES APPLIED PHYSICS LETTERS Nauka, K., Kamins, T. I., Turner, J. E., King, C. A., Hoyt, J. L., Gibbons, J. F. 1992; 60 (2): 195-197
  • EFFECT OF OXYGEN ON MINORITY-CARRIER LIFETIME AND RECOMBINATION CURRENTS IN SI1-XGEX HETEROSTRUCTURE DEVICES APPLIED PHYSICS LETTERS Ghani, T., Hoyt, J. L., Noble, D. B., Gibbons, J. F., Turner, J. E., Kamins, T. I. 1991; 58 (12): 1317-1319
  • LIMITED REACTION PROCESSING - GROWTH OF SI1-XGEX/SI FOR HETEROJUNCTION BIPOLAR-TRANSISTOR APPLICATIONS Hoyt, J. L., King, C. A., Noble, D. B., GRONET, C. M., Gibbons, J. F., Scott, M. P., LADERMAN, S. S., Rosner, S. J., Nauka, K., Turner, J., Kamins, T. I. ELSEVIER SCIENCE SA LAUSANNE. 1990: 93-106
  • THERMAL-STABILITY OF SI/SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES GROWN BY LIMITED REACTION PROCESSING APPLIED PHYSICS LETTERS Noble, D. B., Hoyt, J. L., Gibbons, J. F., Scott, M. P., LADERMAN, S. S., Rosner, S. J., Kamins, T. I. 1989; 55 (19): 1978-1980
  • ELECTRICAL AND MATERIAL QUALITY OF SI1-XGEX/SI P-N HETEROJUNCTIONS PRODUCED BY LIMITED REACTION PROCESSING IEEE ELECTRON DEVICE LETTERS King, C. A., Hoyt, J. L., Noble, D. B., GRONET, C. M., Gibbons, J. F., Scott, M. P., Kamins, T. I., LADERMAN, S. S. 1989; 10 (4): 159-161
  • PROCESSING AND CHARACTERIZATION OF GAAS GROWN INTO RECESSED SILICON JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B ADKISSON, J. W., Kamins, T. I., Koch, S. M., Harris, J. S., Rosner, S. J., Reid, G. A., Nauka, K. 1988; 6 (2): 717-719
  • STRUCTURE OF LPCVD TUNGSTEN FILMS FOR IC APPLICATIONS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Kamins, T. I., Bradbury, D. R., CASS, T. R., LADERMAN, S. S., Reid, G. A. 1986; 133 (12): 2555-2559
  • INTERACTION BETWEEN CVD TUNGSTEN FILMS AND SILICON DURING ANNEALING JOURNAL OF THE ELECTROCHEMICAL SOCIETY Kamins, T. I., LADERMAN, S. S., COULMAN, D. J., Turner, J. E. 1986; 133 (7): 1438-1442
  • EFFECT OF INSULATOR SURFACE ON SELECTIVE DEPOSITION OF CVD TUNGSTEN FILMS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Bradbury, D. R., Kamins, T. I. 1986; 133 (6): 1214-1217
  • TRENCH-ISOLATED TRANSISTORS IN LATERAL CVD EPITAXIAL SILICON-ON-INSULATOR FILMS IEEE ELECTRON DEVICE LETTERS Kamins, T. I., Bradbury, D. R. 1984; 5 (11): 449-451
  • DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON APPLIED PHYSICS LETTERS Swaminathan, B., Saraswat, K. C., DUTTON, R. W., Kamins, T. I. 1982; 40 (9): 795-798
  • A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .2. COMPARISON OF THEORY AND EXPERIMENT IEEE TRANSACTIONS ON ELECTRON DEVICES MANDURAH, M. M., Saraswat, K. C., Kamins, T. I. 1981; 28 (10): 1171-1176
  • A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY IEEE TRANSACTIONS ON ELECTRON DEVICES MANDURAH, M. M., Saraswat, K. C., Kamins, T. I. 1981; 28 (10): 1163-1171
  • LATERAL EPITAXIAL RECRYSTALLIZATION OF DEPOSITED SILICON FILMS ON SILICON DIOXIDE JOURNAL OF THE ELECTROCHEMICAL SOCIETY Kamins, T. I., CASS, T. R., DELLOCA, C. J., Lee, K. F., Pease, R. F., Gibbons, J. F. 1981; 128 (5): 1151-1154
  • CRYSTAL-STRUCTURE AND THERMAL-OXIDATION OF LASER-RECRYSTALIZED POLYCRYSTALLINE SILICON APPLIED PHYSICS LETTERS Kamins, T. I., Lee, K. F., Gibbons, J. F. 1980; 36 (7): 550-553
  • INTERFACE CHARGES BENEATH LASER-ANNEALED INSULATORS ON SILICON SOLID-STATE ELECTRONICS Kamins, T. I., Lee, K. F., Gibbons, J. F. 1980; 23 (10): 1037-1039
  • DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON JOURNAL OF APPLIED PHYSICS MANDURAH, M. M., Saraswat, K. C., Helms, C. R., Kamins, T. I. 1980; 51 (11): 5755-5763
  • ARSENIC SEGREGATION IN POLYCRYSTALLINE SILICON APPLIED PHYSICS LETTERS MANDURAH, M. M., Saraswat, K. C., Kamins, T. I. 1980; 36 (8): 683-685
  • PHOSPHORUS DOPING OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS JOURNAL OF THE ELECTROCHEMICAL SOCIETY MANDURAH, M. M., Saraswat, K. C., Kamins, T. I. 1979; 126 (6): 1019-1023
  • TRANSIENT AND STEADY-STATE RESPONSE OF DOPANT SYSTEM OF A SILICON EPITAXIAL REACTOR - TRANSFER-FUNCTION APPROACH JOURNAL OF THE ELECTROCHEMICAL SOCIETY Reif, R., Kamins, T. I., Saraswat, K. 1978; 125 (11): 1860-1866
  • STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Kamins, T. I., MANDURAH, M. M., Saraswat, K. C. 1978; 125 (6): 927-932
  • STRUCTURE OF CHEMICALLY DEPOSITED POLYCRYSTALLINE-SILICON FILMS THIN SOLID FILMS Kamins, T. I., CASS, T. R. 1973; 16 (2): 147-165
  • IN-PROCESS THICKNESS MONITOR FOR POLYCRYSTALLINE SILICON DEPOSITION JOURNAL OF THE ELECTROCHEMICAL SOCIETY Kamins, T. I., DELLOCA, C. J. 1972; 119 (1): 112-?