Bio


Ted received his degrees from the University of California, Berkeley. He then joined the Research and Development Laboratory of Fairchild Semiconductor, where he worked with epitaxial and polycrystalline silicon before moving to Hewlett-Packard Laboratories, where he worked on numerous semiconductor material and device topics. Before moving to Stanford, he was a Principal Scientist at Hewlett-Packard in the Information and Quantum Systems Laboratory, where he conducted research on advanced nanostructured electronic and sensing materials and devices.

Ted is co-author with R. S. Muller of the textbook "Device Electronics for Integrated Circuits" and is author of the book "Polycrystalline Silicon for Integrated Circuits and Displays." He is a Fellow of the IEEE and a Fellow of the Electrochemical Society. He has taught at the University of California, Berkeley, and at Stanford University and has been an Associate Editor of the IEEE Transactions on Electron Devices.

Academic Appointments


Honors & Awards


  • Fellow, IEEE
  • Fellow, Electrochemical Society

Professional Education


  • PhD, University of California, Berkeley, Electrical Engineering (Solid-State Electronics)
  • MS, University of California, Berkeley, Electrical Engineering
  • BS, University of California, Berkeley, Electrical Engineering

Current Research and Scholarly Interests


Ted is guiding research on epitaxial Si and Ge deposition for optical interconnects and medical sensing, on photodiode arrays for retinal prosthesis, and on other applications of advanced semiconductor processing techniques.

Projects


  • Group IV materials for optical interconnects, Stanford University - Department of Electrical Engineering

    Epitaxial deposition and devices for on-chip optical interconnections for high-performance integrated circuits.

    Location

    Stanford

  • Photovoltaic arrays for retinal prostheses, Stanford University - Departments of Electrical Engineering and Ophthalmology; Hansen Experimental Physics Laboratory

    Design and fabrication silicon photodiode arrays for photovoltaically powered retinal prostheses

    Location

    Stanford

    Collaborators

    • James Harris, James and Elenor Chesebrough Professor in the School of Engineering and Professor, by courtesy, of Materials Science and Engineering and of Applied Physics

Work Experience


  • Prinicipal Scientist, Hewlett-Packard Laboratories

    Location

    Palo Alto, California

  • Member Research Staff, Fairchild Semiconductor, Research and Development Laboratory

    Location

    Palo Alto, California

  • Acting Assistant Professor, University of California, Berkeley

    Location

    Berkeley, California

Journal Articles


  • Photovoltaic Retinal Prosthesis with High Pixel Density. Nature photonics Mathieson, K., Loudin, J., Goetz, G., Huie, P., Wang, L., Kamins, T. I., Galambos, L., Smith, R., Harris, J. S., Sher, A., Palanker, D. 2012; 6 (6): 391-397

    Abstract

    Retinal degenerative diseases lead to blindness due to loss of the "image capturing" photoreceptors, while neurons in the "image processing" inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm(2), two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 ?m bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density.

    View details for PubMedID 23049619

  • Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition APPLIED PHYSICS LETTERS Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2011; 98 (15)

    View details for DOI 10.1063/1.3574912

    View details for Web of Science ID 000289580800008

  • Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Huo, Y., Lin, H., Chen, R., Makarova, M., Rong, Y., Li, M., Kamins, T. I., Vuckovic, J., Harris, J. S. 2011; 98 (1)

    View details for DOI 10.1063/1.3534785

    View details for Web of Science ID 000286009800012

  • Integration of Self-Assembled Metal-Catalyzed Semiconductor Nanowires for Sensors and Large-Area Electronics IEEE TRANSACTIONS ON ELECTRON DEVICES Kamins, T. I. 2008; 55 (11): 3096-3106
  • Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Kuo, Y., Lee, Y. K., Ge, Y., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2006; 12 (6): 1503-1513
  • Strong quantum-confined Stark effect in germanium quantum-well structures on silicon NATURE Kuo, Y. H., Lee, Y. K., Ge, Y. S., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2005; 437 (7063): 1334-1336

    Abstract

    Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated; but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimetres) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism, which allows modulator structures with only micrometres of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor; such semiconductors often display much weaker optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.

    View details for DOI 10.1038/nature04204

    View details for Web of Science ID 000232829100048

    View details for PubMedID 16251959

  • Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires JOURNAL OF CRYSTAL GROWTH Sharma, S., Kamins, T. I., Islam, M. S., Williams, R. S., Marshall, A. F. 2005; 280 (3-4): 562-568
  • REDUCTION IN MISFIT DISLOCATION DENSITY BY THE SELECTIVE GROWTH OF SI1-XGEX/SI IN SMALL AREAS APPLIED PHYSICS LETTERS Noble, D. B., Hoyt, J. L., King, C. A., Gibbons, J. F., Kamins, T. I., Scott, M. P. 1990; 56 (1): 51-53
  • SMALL-GEOMETRY, HIGH-PERFORMANCE, SI-SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS IEEE ELECTRON DEVICE LETTERS Kamins, T. I., Nauka, K., KRUGER, J. B., Hoyt, J. L., King, C. A., Noble, D. B., GRONET, C. M., Gibbons, J. F. 1989; 10 (11): 503-505
  • MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .2. COMPARISON OF THEORY AND EXPERIMENT JOURNAL OF THE ELECTROCHEMICAL SOCIETY Reif, R., Kamins, T. I., Saraswat, K. C. 1979; 126 (4): 653-660
  • MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .1. THEORY JOURNAL OF THE ELECTROCHEMICAL SOCIETY Reif, R., Kamins, T. I., Saraswat, K. C. 1979; 126 (4): 644-652
  • Surface-Normal Ge/SiGe Asymmetric Fabry-Perot Optical Modulators Fabricated on Silicon Substrates JOURNAL OF LIGHTWAVE TECHNOLOGY Audet, R. M., Edwards, E. H., Balram, K. C., Claussen, S. A., Schaevitz, R. K., Tasyurek, E., Rong, Y., Fei, E. I., Kamins, T. I., Harris, J. S., Miller, D. A. 2013; 31 (24): 3995-4003
  • Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials NATURE COMMUNICATIONS Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Galambos, L., Manivanh, R., Harris, J., Palanker, D. 2013; 4

    View details for DOI 10.1038/ncomms2980

    View details for Web of Science ID 000323624600003

  • Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing JOURNAL OF CRYSTAL GROWTH Chen, R., Huang, Y., Gupta, S., Lin, A. C., Sanchez, E., Kim, Y., Saraswat, K. C., Kamins, T. I., Harris, J. S. 2013; 365: 29-34
  • Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon OPTICS EXPRESS Edwards, E. H., Lever, L., Fei, E. T., Kamins, T. I., Ikonic, Z., Harris, J. S., Kelsall, R. W., Miller, D. A. 2013; 21 (1): 867-876

    Abstract

    We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.

    View details for DOI 10.1364/OE.21.000867

    View details for Web of Science ID 000315988100111

  • Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials. Nature communications Mandel, Y., Goetz, G., Lavinsky, D., Huie, P., Mathieson, K., Wang, L., Kamins, T., Galambos, L., Manivanh, R., Harris, J., Palanker, D. 2013; 4: 1980-?

    Abstract

    We have previously developed a wireless photovoltaic retinal prosthesis, in which camera-captured images are projected onto the retina using pulsed near-IR light. Each pixel in the subretinal implant directly converts pulsed light into local electric current to stimulate the nearby inner retinal neurons. Here we report that implants having pixel sizes of 280, 140 and 70 μm implanted in the subretinal space in rats with normal and degenerate retina elicit robust cortical responses upon stimulation with pulsed near-IR light. Implant-induced eVEP has shorter latency than visible light-induced VEP, its amplitude increases with peak irradiance and pulse duration, and decreases with frequency in the range of 2-20 Hz, similar to the visible light response. Modular design of the arrays allows scalability to a large number of pixels, and combined with the ease of implantation, offers a promising approach to restoration of sight in patients blinded by retinal degenerative diseases.

    View details for DOI 10.1038/ncomms2980

    View details for PubMedID 23778557

  • Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators OPTICS EXPRESS Edwards, E. H., Audet, R. M., Fei, E. T., Claussen, S. A., Schaevitz, R. K., Tasyurek, E., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 20 (28): 29164-29173

    Abstract

    We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.

    View details for Web of Science ID 000314914500005

    View details for PubMedID 23388742

  • Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications OPTICAL MATERIALS EXPRESS Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 2 (10): 1336-1342
  • Photovoltaic retinal prosthesis: implant fabrication and performance JOURNAL OF NEURAL ENGINEERING Wang, L., Mathieson, K., Kamins, T. I., Loudin, J. D., Galambos, L., Goetz, G., Sher, A., Mandel, Y., Huie, P., Lavinsky, D., Harris, J. S., Palanker, D. V. 2012; 9 (4)

    Abstract

    The objective of this work is to develop and test a photovoltaic retinal prosthesis for restoring sight to patients blinded by degenerative retinal diseases. A silicon photodiode array for subretinal stimulation has been fabricated by a silicon-integrated-circuit/MEMS process. Each pixel in the two-dimensional array contains three series-connected photodiodes, which photovoltaically convert pulsed near-infrared light into bi-phasic current to stimulate nearby retinal neurons without wired power connections. The device thickness is chosen to be 30 µm to absorb a significant portion of light while still being thin enough for subretinal implantation. Active and return electrodes confine current near each pixel and are sputter coated with iridium oxide to enhance charge injection levels and provide a stable neural interface. Pixels are separated by 5 µm wide trenches to electrically isolate them and to allow nutrient diffusion through the device. Three sizes of pixels (280, 140 and 70 µm) with active electrodes of 80, 40 and 20 µm diameter were fabricated. The turn-on voltages of the one-diode, two-series-connected diode and three-series-connected diode structures are approximately 0.6, 1.2 and 1.8 V, respectively. The measured photo-responsivity per diode at 880 nm wavelength is ?0.36 A W(-1), at zero voltage bias and scales with the exposed silicon area. For all three pixel sizes, the reverse-bias dark current is sufficiently low (<100 pA) for our application. Pixels of all three sizes reliably elicit retinal responses at safe near-infrared light irradiances, with good acceptance of the photodiode array in the subretinal space. The fabricated device delivers efficient retinal stimulation at safe near-infrared light irradiances without any wired power connections, which greatly simplifies the implantation procedure. Presence of the return electrodes in each pixel helps to localize the current, and thereby improves resolution.

    View details for DOI 10.1088/1741-2560/9/4/046014

    View details for Web of Science ID 000306759600027

    View details for PubMedID 22791690

  • Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by Gamma-valley transport OPTICS EXPRESS Cho, S., Park, B., Yang, C., Cheung, S., Yoon, E., Kamins, T. I., Ben Yoo, S. J., Harris, J. S. 2012; 20 (14): 14921-14927
  • Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by G-valley transport. Optics express Cho, S., Park, B., Yang, C., Cheung, S., Yoon, E., Kamins, T. I., Yoo, S. J., Harris, J. S. 2012; 20 (14): 14921-14927

    Abstract

    Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the ?-valley of germanium.

    View details for DOI 10.1364/OE.20.014921

    View details for PubMedID 22772186

  • Structural and optical characterization of SixGe1-x-ySny alloys grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 100 (14)

    View details for DOI 10.1063/1.3701732

    View details for Web of Science ID 000302567800026

  • Low-temperature growth of Ge1-xSnx thin films with strain control by molecular beam epitaxy THIN SOLID FILMS Lin, H., Chen, R., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 520 (11): 3927-3930
  • Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides IEEE PHOTONICS TECHNOLOGY LETTERS Ren, S., Rong, Y., Claussen, S. A., Schaevitz, R. K., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 24 (6): 461-463
  • Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopy APPLIED PHYSICS LETTERS Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012; 100 (10)

    View details for DOI 10.1063/1.3692735

    View details for Web of Science ID 000301655500038

  • Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells IEEE JOURNAL OF QUANTUM ELECTRONICS Schaevitz, R. K., Edwards, E. H., Roth, J. E., Fei, E. T., Rong, Y., Wahl, P., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 48 (2): 187-197
  • Intermixing during Ripening in Ge-Si Incoherent Epitaxial Nanocrystals JOURNAL OF PHYSICAL CHEMISTRY C Leite, M. S., Kamins, T. I., Williams, R. S., Medeiros-Ribeiro, G. 2012; 116 (1): 901-907

    View details for DOI 10.1021/jp2092016

    View details for Web of Science ID 000298978700110

  • Selective-Area Growth of Ge and Ge/SiGe Quantum Wells in 3 mu m Silicon-on-Insulator Waveguides 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. 2012
  • Photovoltaic retinal prosthesis for restoring sight to the blind: implant design and fabrication MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVII Wang, L., Mathieson, K., Kamins, T. I., Loudin, J., Galambos, L., Harris, J. S., Palanker, D. 2012; 8248

    View details for DOI 10.1117/12.909104

    View details for Web of Science ID 000302640000004

  • Light Emission in Ge Quantum Wells 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Fei, E. T., Huo, Y., Shambat, G., Chen, X., Liu, X., Claussen, S. A., Edwards, E. H., Kamins, T. I., Miller, D. A., Vuckovic, J., Harris, J. S. 2012
  • A New Approach to Ge Lasers with Low Pump Power 2012 IEEE PHOTONICS CONFERENCE (IPC) Chen, X., Huo, Y., Fei, E. T., Shambat, G., Zang, K., Liu, X., Chen, Y., Kamins, T. I., Vuckovic, J., Harris, J. S. 2012: 60-61
  • Optical properties of Ge1-zSnz/SixGe1-x-ySny heterostructures 2012 IEEE PHOTONICS CONFERENCE (IPC) Lin, H., Chen, R., Lu, W., Huo, Y., Kamins, T. I., Harris, J. S. 2012: 919-920
  • Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation APPLIED PHYSICS LETTERS Cho, S., Kang, I. M., Kamins, T. I., Park, B., Harris, J. S. 2011; 99 (24)

    View details for DOI 10.1063/1.3670325

    View details for Web of Science ID 000298254200065

  • Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy APPLIED PHYSICS LETTERS Chen, R., Lin, H., Huo, Y., Hitzman, C., Kamins, T. I., Harris, J. S. 2011; 99 (18)

    View details for DOI 10.1063/1.3658632

    View details for Web of Science ID 000296659400025

  • Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator With 20-nm Free-Spectral Range IEEE PHOTONICS TECHNOLOGY LETTERS Cho, S., Chen, R., Koo, S., Shambat, G., Lin, H., Park, N., Vuckovic, J., Kamins, T. I., Park, B., Harris, J. S. 2011; 23 (20)
  • Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Cho, S., Sun, M., Kim, G., Kamins, T. I., Park, B., Harris, J. S. 2011; 11 (3): 182-189
  • Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium or Germanium Quantum Wells With Silicon-on-Insulator Waveguides IEEE PHOTONICS JOURNAL Ren, S., Kamins, T. I., Miller, D. A. 2011; 3 (4): 739-747
  • Raman study of strained Ge1-xSnx alloys APPLIED PHYSICS LETTERS Lin, H., Chen, R., Huo, Y., Kamins, T. I., Harris, J. S. 2011; 98 (26)

    View details for DOI 10.1063/1.3606384

    View details for Web of Science ID 000292335700027

  • Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon APPLIED PHYSICS LETTERS Cheng, S., Shambat, G., Lu, J., Yu, H., Saraswat, K., Kamins, T. I., Vuckovic, J., Nishi, Y. 2011; 98 (21)

    View details for DOI 10.1063/1.3592837

    View details for Web of Science ID 000291041600001

  • Electrical Characteristics of Germanium n(+)/p Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb IEEE ELECTRON DEVICE LETTERS Thareja, G., Cheng, S., Kamins, T., Saraswat, K., Nishi, Y. 2011; 32 (5): 608-610
  • Photovoltaic Retinal Prosthesis OPHTHALMIC TECHNOLOGIES XXI Loudin, J., Mathieson, K., Kamins, T., Wang, L., Galambos, L., Huie, P., Sher, A., Harris, J., Palanker, D. 2011; 7885

    View details for DOI 10.1117/12.876560

    View details for Web of Science ID 000297590500028

  • In situ control of Au-catalyzed chemical vapor deposited (CVD) Ge nanocone morphology by growth temperature variation JOURNAL OF CRYSTAL GROWTH Cho, H. S., Kamins, T. I. 2010; 312 (16-17): 2494-2497
  • Integration of Germanium Quantum Well Structures on a Silicon-on-Insulator Waveguide Platform for Optical Modulator Applications 2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2010: 60-62
  • Si-Ge Surface-normal Asymmetric Fabry-Perot Quantum-confined Stark Effect Electroabsorption Modulator 2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY Edwards, E. H., Audet, R. M., Rong, Y., Claussen, S. A., Schaevitz, R. K., Tasyuerek, E., Ren, S., Kamins, T. I., Harris, J. S., Miller, D. A., Dosunmu, O. I., Uenlue, M. S. 2010: 514-515
  • MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift 2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) Huo, Y., Chen, R., Lin, H., Kamins, T. I., Harris, J. S. 2010: 344-346
  • High Performance Germanium N-MOSFET with Antimony Dopant Activation Beyond 1x10(20) cm(-3) 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST Thareja, G., Liang, J., Chopra, S., Adams, B., Patil, N., Cheng, S., Nainani, A., Tasyurek, E., Kim, Y., Moffatt, S., Brennan, R., McVittie, J., KAMINS, T., Saraswat, K., Nishi, Y. 2010
  • Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Rong, Y., Ge, Y., Huo, Y., Fiorentino, M., Tan, M. R., Kamins, T. I., Ochalski, T. J., Huyet, G., Harris, J. S. 2010; 16 (1): 85-92
  • Direct Band Gap Tensile-Strained Germanium 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 Huo, Y., Lin, H., Rong, Y., Makarova, M., Kamins, T. I., Vuckovic, J., Harris, J. S. 2009: 824-825
  • Temperature-dependent Auger recombination dynamics in luminescent silicon nanowires PHYSICAL REVIEW B Guichard, A. R., Kekatpure, R. D., Brongersma, M. L., Kamins, T. I. 2008; 78 (23)
  • C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing ELECTRONICS LETTERS Roth, J. E., Fidaner, O., Edwards, E. H., Schaevitz, R. K., Kuo, Y., Helman, N. C., Kamins, T. I., Harris, J. S., Miller, D. A. 2008; 44 (1): 49-U63
  • Optical modulator on silicon employing germanium quantum wells OPTICS EXPRESS Roth, J. E., Fidaner, O., Schaevitz, R. K., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2007; 15 (9): 5851-5859

    Abstract

    We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers. The peak contrast ratio is 7.3 dB at 1457 nm for a 10 V swing, and exceeds 3 dB from 1441 nm to 1461 nm. The novel side-entry structure employs an asymmetric Fabry-Perot resonator at oblique incidence. Unlike waveguide modulators, the design is insensitive to positional misalignment, maintaining > 3 dB contrast while translating the incident beam 87 mum and 460 mum in orthogonal directions. Since the optical ports are on the substrate edges, the wafer top and bottom are left free for electrical interconnections and thermal management.

    View details for Web of Science ID 000246395000064

    View details for PubMedID 19532843

  • The quantum confined Stark effect in Ge/SiGe quantum wells: An efficient electroabsorption mechanism for silicon-based applications 2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS Roth, J. E., Fidaner, O., Schaevitz, R. K., Edwards, E. H., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2007: 178-180
  • Alkylsiloxane self-assembled monolayer formation guided by nanoimprinted Si and SiO2 templates APPLIED PHYSICS LETTERS Yasseri, A. A., Sharma, S., Kamins, T. I., Xia, Q., Chou, S. Y., Pease, R. F. 2006; 89 (15)

    View details for DOI 10.1063/1.2360920

    View details for Web of Science ID 000241247900113

  • Tunable light emission from quantum-confined excitons in TiSi2-catalyzed silicon nanowires NANO LETTERS Guichard, A. R., Barsic, D. N., Sharma, S., Kamins, T. I., Brongersma, M. L. 2006; 6 (9): 2140-2144

    Abstract

    Visible and near-infrared photoluminescence (PL) at room temperature is reported from Si nanowires (NWs) grown by chemical vapor deposition from TiSi2 catalyst sites. NWs grown with average diameter of 20 nm were etched and oxidized to thin and passivate the wires. The PL emission blue shifted continuously with decreasing nanowire diameter. Slowed oxidation was observed for small nanowire diameters and provides a high degree of control over the emission wavelength. Transmission electron microscopy, PL, and time-resolved PL data are fully consistent with quantum confinement of charge carriers in the Si nanowire core being the source of luminescence. These light emitting nanowires could find application in future CMOS-compatible photonic devices.

    View details for DOI 10.1021/nl061287m

    View details for Web of Science ID 000240465100054

    View details for PubMedID 16968040

  • Formation and characterization of long-chained alkylsiloxane self-assembled monolayers on atomic-layer-deposited aluminum oxide surfaces APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Yasseri, A. A., Kobayashi, N. P., Kamins, T. I. 2006; 84 (1-2): 1-5
  • Metal-catalysed, bridging nanowires as vapour sensors and concept for their use in a sensor system NANOTECHNOLOGY Kamins, T. I., Sharma, S., Yasseri, A. A., Li, Z., Straznicky, J. 2006; 17 (11): S291-S297
  • Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Yasseri, A. A., Sharma, S., Kamins, T. I., Li, Z., Williams, R. S. 2006; 82 (4): 659-664
  • Electroless deposition of Au nanocrystals on Si(111) surfaces as catalysts for epitaxial growth of Si nanowires ELECTROCHEMICAL AND SOLID STATE LETTERS Yasseri, A. A., Sharma, S., Jung, G. Y., Kamins, T. I. 2006; 9 (12): C185-C188

    View details for DOI 10.1149/1.2349669

    View details for Web of Science ID 000241586200012

  • Light emitting silicon nanowires for photonic device applications 2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS Guichard, A. R., Brongersma, M. L., Kamins, T., Sharma, S. 2006: 137-139
  • Surface charge density of unpassivated and passivated metal-catalyzed silicon nanowires ELECTROCHEMICAL AND SOLID STATE LETTERS Seo, K. I., Sharma, S., Yasseri, A. A., Stewart, D. R., Kamins, T. I. 2006; 9 (3): G69-G72

    View details for DOI 10.1149/1.2159295

    View details for Web of Science ID 000235479500029

  • Arsenic surface segregation during in situ doped silicon and Si1-xGex molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH Liu, X., Tang, Q., Harris, J. S., Kamins, T. I. 2005; 281 (2-4): 334-343
  • In situ p-n junctions and gated devices in titanium-silicide nucleated Si nanowires ELECTROCHEMICAL AND SOLID STATE LETTERS Tang, Q., Kamins, T. I., Liu, X., Grupp, D. E., Harris, J. S. 2005; 8 (8): G204-G208
  • Surface photovoltage in silicon. Novel applications for chemical and biological sensing MATERIALS SCIENCE-POLAND Nauka, K., Li, Z., Kamins, T. I. 2005; 23 (3): 653-661
  • Growth and characterization of SiGe layers on Ge-lattice-matched substrates by MBE for long wavelength optical devices 2005 CONFERENCE ON LASERS & ELECTRO-OPTICS (CLEO), VOLS 1-3 Kuo, Y. H., Yu, X., Fu, J., Solomon, G. S., Harris, J. S., Kamins, T. I. 2005: 2137-2139
  • Growth and structure of chemically vapor deposited Ge nanowires on Si substrates NANO LETTERS Kamins, T. I., Li, X., Williams, R. S. 2004; 4 (3): 503-506

    View details for DOI 10.1021/nl035166n

    View details for Web of Science ID 000220170600023

  • Sequence-specific label-free DNA sensors based on silicon nanowires NANO LETTERS Li, Z., Chen, Y., Li, X., Kamins, T. I., Nauka, K., Williams, R. S. 2004; 4 (2): 245-247

    View details for DOI 10.1021/nl034958e

    View details for Web of Science ID 000188965700010

  • Twinning in TiSi2-island catalyzed Si nanowires grown by gas-source molecular-beam epitaxy APPLIED PHYSICS LETTERS Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. 2002; 81 (13): 2451-2453

    View details for DOI 10.1063/1.1509096

    View details for Web of Science ID 000178037600045

  • Ti-island-catalyzed Si nanowire growth by gas-source MBE: Morphology and twinning FUNCTIONAL NANOSTRUCTURED MATERIALS THROUGH MULTISCALE ASSEMBLY AND NOVEL PATTERNING TECHNIQUES Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. 2002; 728: 235-240
  • Effect of self-assembled Ge nanostructures on Si surface electronic properties APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Kamins, T. I., Nauka, K., Williams, R. S. 2001; 73 (1): 1-9
  • Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms JOURNAL OF APPLIED PHYSICS Kamins, T. I., Williams, R. S., Basile, D. P., Hesjedal, T., Harris, J. S. 2001; 89 (2): 1008-1016
  • Modification of the Si surface electronic properties by Ge nanostructures: Surface photovoltage studies PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II Nauka, K., Kamins, T. I. 2001; 87: 305-306
  • Interaction of self-assembled Ge islands and adjacent Si layers grown on unpatterned and patterned Si(001) substrates JOURNAL OF ELECTRONIC MATERIALS Kamins, T. I., Basile, D. P. 2000; 29 (5): 570-575
  • Deep state defects in strained and relaxed epitaxial Si1-xGex on Si introduced by 3d transition metal and 5d noble metal impurities PHYSICA B-CONDENSED MATTER Nauka, K., Kamins, T. I. 1999; 273-4: 603-607
  • Self-aligning of self-assembled Ge islands on Si(001) NANOTECHNOLOGY Kamins, T. I., Williams, R. S., Basile, D. P. 1999; 10 (2): 117-121
  • Surface photovoltage measurement of hydrogen-treated Si surfaces JOURNAL OF THE ELECTROCHEMICAL SOCIETY Nauka, K., Kamins, T. I. 1999; 146 (1): 292-295
  • Effect of hydrogen on p-type epitaxial silicon sheet-resistance measurements ELECTROCHEMICAL AND SOLID STATE LETTERS Kamins, T. I., Nauka, K. 1998; 1 (2): 100-101
  • Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures JOURNAL OF APPLIED PHYSICS Kamins, T. I., CARR, E. C., Williams, R. S., Rosner, S. J. 1997; 81 (1): 211-219
  • A MONOLITHIC GAAS-ON-SI RECEIVER FRONT-END FOR OPTICAL INTERCONNECT SYSTEMS IEEE JOURNAL OF SOLID-STATE CIRCUITS Nasserbakht, G. N., ADKISSON, J. W., Wooley, B. A., Harris, J. S., Kamins, T. I. 1993; 28 (6): 622-630
  • COMPARISON OF BORON-DIFFUSION IN SI AND STRAINED SI1-XGEX EPITAXIAL LAYERS APPLIED PHYSICS LETTERS Kuo, P., Hoyt, J. L., Gibbons, J. F., Turner, J. E., JACOWITZ, R. D., Kamins, T. I. 1993; 62 (6): 612-614
  • ELECTRICAL CHARACTERISTICS OF DIODES FABRICATED IN SELECTIVE SI/SI1-XGEX EPITAXIAL LAYERS JOURNAL OF ELECTRONIC MATERIALS Kamins, T. I., Nauka, K., JACOWITZ, R. D., Hoyt, J. L., Noble, D. B., Gibbons, J. F. 1992; 21 (8): 817-824
  • ELECTRICAL AND STRUCTURAL-PROPERTIES OF DIODES FABRICATED IN THICK, SELECTIVELY DEPOSITED SI/SI1-XGEX EPITAXIAL LAYERS IEEE ELECTRON DEVICE LETTERS Kamins, T. I., Nauka, K., JACOWITZ, R. D., Hoyt, J. L., Noble, D. B., Gibbons, J. F. 1992; 13 (4): 177-179
  • ADMITTANCE SPECTROSCOPY MEASUREMENTS OF BAND OFFSETS IN SI/SI1-XGEX/SI HETEROSTRUCTURES APPLIED PHYSICS LETTERS Nauka, K., Kamins, T. I., Turner, J. E., King, C. A., Hoyt, J. L., Gibbons, J. F. 1992; 60 (2): 195-197
  • EFFECT OF OXYGEN ON MINORITY-CARRIER LIFETIME AND RECOMBINATION CURRENTS IN SI1-XGEX HETEROSTRUCTURE DEVICES APPLIED PHYSICS LETTERS Ghani, T., Hoyt, J. L., Noble, D. B., Gibbons, J. F., Turner, J. E., Kamins, T. I. 1991; 58 (12): 1317-1319
  • THERMAL-STABILITY OF SI/SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES GROWN BY LIMITED REACTION PROCESSING APPLIED PHYSICS LETTERS Noble, D. B., Hoyt, J. L., Gibbons, J. F., Scott, M. P., LADERMAN, S. S., Rosner, S. J., Kamins, T. I. 1989; 55 (19): 1978-1980
  • ELECTRICAL AND MATERIAL QUALITY OF SI1-XGEX/SI P-N HETEROJUNCTIONS PRODUCED BY LIMITED REACTION PROCESSING IEEE ELECTRON DEVICE LETTERS King, C. A., Hoyt, J. L., Noble, D. B., GRONET, C. M., Gibbons, J. F., Scott, M. P., Kamins, T. I., LADERMAN, S. S. 1989; 10 (4): 159-161
  • PROCESSING AND CHARACTERIZATION OF GAAS GROWN INTO RECESSED SILICON JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B ADKISSON, J. W., Kamins, T. I., Koch, S. M., Harris, J. S., Rosner, S. J., Reid, G. A., Nauka, K. 1988; 6 (2): 717-719
  • STRUCTURE OF LPCVD TUNGSTEN FILMS FOR IC APPLICATIONS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Kamins, T. I., Bradbury, D. R., CASS, T. R., LADERMAN, S. S., Reid, G. A. 1986; 133 (12): 2555-2559
  • INTERACTION BETWEEN CVD TUNGSTEN FILMS AND SILICON DURING ANNEALING JOURNAL OF THE ELECTROCHEMICAL SOCIETY Kamins, T. I., LADERMAN, S. S., COULMAN, D. J., Turner, J. E. 1986; 133 (7): 1438-1442
  • EFFECT OF INSULATOR SURFACE ON SELECTIVE DEPOSITION OF CVD TUNGSTEN FILMS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Bradbury, D. R., Kamins, T. I. 1986; 133 (6): 1214-1217
  • TRENCH-ISOLATED TRANSISTORS IN LATERAL CVD EPITAXIAL SILICON-ON-INSULATOR FILMS IEEE ELECTRON DEVICE LETTERS Kamins, T. I., Bradbury, D. R. 1984; 5 (11): 449-451
  • DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON APPLIED PHYSICS LETTERS Swaminathan, B., Saraswat, K. C., DUTTON, R. W., Kamins, T. I. 1982; 40 (9): 795-798
  • A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .2. COMPARISON OF THEORY AND EXPERIMENT IEEE TRANSACTIONS ON ELECTRON DEVICES MANDURAH, M. M., Saraswat, K. C., Kamins, T. I. 1981; 28 (10): 1171-1176
  • A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY IEEE TRANSACTIONS ON ELECTRON DEVICES MANDURAH, M. M., Saraswat, K. C., Kamins, T. I. 1981; 28 (10): 1163-1171
  • LATERAL EPITAXIAL RECRYSTALLIZATION OF DEPOSITED SILICON FILMS ON SILICON DIOXIDE JOURNAL OF THE ELECTROCHEMICAL SOCIETY Kamins, T. I., CASS, T. R., DELLOCA, C. J., Lee, K. F., Pease, R. F., Gibbons, J. F. 1981; 128 (5): 1151-1154
  • CRYSTAL-STRUCTURE AND THERMAL-OXIDATION OF LASER-RECRYSTALIZED POLYCRYSTALLINE SILICON APPLIED PHYSICS LETTERS Kamins, T. I., Lee, K. F., Gibbons, J. F. 1980; 36 (7): 550-553
  • DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON JOURNAL OF APPLIED PHYSICS MANDURAH, M. M., Saraswat, K. C., Helms, C. R., Kamins, T. I. 1980; 51 (11): 5755-5763
  • ARSENIC SEGREGATION IN POLYCRYSTALLINE SILICON APPLIED PHYSICS LETTERS MANDURAH, M. M., Saraswat, K. C., Kamins, T. I. 1980; 36 (8): 683-685
  • INTERFACE CHARGES BENEATH LASER-ANNEALED INSULATORS ON SILICON SOLID-STATE ELECTRONICS Kamins, T. I., Lee, K. F., Gibbons, J. F. 1980; 23 (10): 1037-1039
  • PHOSPHORUS DOPING OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS JOURNAL OF THE ELECTROCHEMICAL SOCIETY MANDURAH, M. M., Saraswat, K. C., Kamins, T. I. 1979; 126 (6): 1019-1023
  • STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Kamins, T. I., MANDURAH, M. M., Saraswat, K. C. 1978; 125 (6): 927-932
  • TRANSIENT AND STEADY-STATE RESPONSE OF DOPANT SYSTEM OF A SILICON EPITAXIAL REACTOR - TRANSFER-FUNCTION APPROACH JOURNAL OF THE ELECTROCHEMICAL SOCIETY Reif, R., Kamins, T. I., Saraswat, K. 1978; 125 (11): 1860-1866
  • STRUCTURE OF CHEMICALLY DEPOSITED POLYCRYSTALLINE-SILICON FILMS THIN SOLID FILMS Kamins, T. I., CASS, T. R. 1973; 16 (2): 147-165
  • IN-PROCESS THICKNESS MONITOR FOR POLYCRYSTALLINE SILICON DEPOSITION JOURNAL OF THE ELECTROCHEMICAL SOCIETY Kamins, T. I., DELLOCA, C. J. 1972; 119 (1): 112-?

Books and Book Chapters


Conference Proceedings


  • X-ray diffraction analysis of step-graded InxGa1-xAs buffer layers grown by molecular beam epitaxy Lin, H., Huo, Y., Rong, Y., Chen, R., Kamins, T. I., Harris, J. S. ELSEVIER SCIENCE BV. 2011: 17-20
  • Smooth, 3D Ge transistor channels by heteroepitaxial growth Cho, H. S., Kamins, T. I. ELSEVIER SCIENCE BV. 2011: 351-353
  • Nano-graphoepitaxy of semiconductors for 3D integration Crnogorac, F., Witte, D. J., Xia, Q., Rajendran, B., Pickard, D. S., Liu, Z., Mehta, A., Sharma, S., Yasseri, A., Kamins, T. I., Chou, S. Y., Pease, R. F. ELSEVIER SCIENCE BV. 2007: 891-894
  • Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering Kamins, T. I., Yasseri, A. A., Sharma, S., Pease, R. F., Xia, Q., Chou, S. Y. ELSEVIER SCI LTD. 2006: 1481-1485
  • Heavy arsenic doping of silicon by molecular beam epitaxy Liu, X., Tang, Q., Kamins, T. I., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 651-656
  • Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBE Tang, Q., Liu, X., Kamins, T. I., Solomon, G. S., Harris, J. S. ELSEVIER SCIENCE BV. 2003: 662-665
  • Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates Kamins, T. I., Williams, R. S., Hesjedal, T., Harris, J. S. ELSEVIER SCIENCE BV. 2002: 995-998
  • LIMITED REACTION PROCESSING - GROWTH OF SI1-XGEX/SI FOR HETEROJUNCTION BIPOLAR-TRANSISTOR APPLICATIONS Hoyt, J. L., King, C. A., Noble, D. B., GRONET, C. M., Gibbons, J. F., Scott, M. P., LADERMAN, S. S., Rosner, S. J., Nauka, K., Turner, J., Kamins, T. I. ELSEVIER SCIENCE SA LAUSANNE. 1990: 93-106