Yanjie Shao

All Publications

• Discrete Ferroelectric Polarization Switching in Nanoscale Oxide-Channel Ferroelectric Field-Effect Transistors. Nano letters Shao, Y., Rafie Borujeny, E., Navarro Fidalgo, J., Huang, J. C., Espedal, T. E., Antoniadis, D. A., Del Alamo, J. A. 2025; 25 (8): 3173-3179

  Abstract

  In this work, we study polarization switching behavior in scaled hafnium-zirconium oxide (HZO) ferroelectric (FE) field-effect transistors with an amorphous oxide-semiconductor channel with dimensions down to the FE domain level. Channel thickness scaling acts as an effective approach to memory window (MW) enhancement. With an indium-tin oxide channel thickness of 2.5 nm, we demonstrate a large MW of 2.2 V. Discrete FE polarization switching is observed in narrow- and short-channel transistors, where a small number of FE domains are involved. Based on a detailed MW scaling study with channel length, we estimate the size of the FE domain in our HZO to be ∼40 nm. Fatigue experiments in nanoscale transistors reveal the dominant role of FE domain pinning, which leads to negative threshold voltage shift and degraded MW. Our results open up a new avenue for probing FE physics based on single domain behavior.

  View details for DOI 10.1021/acs.nanolett.4c05731

  View details for PubMedID 39943834

• Single-domain Switching Dynamics in BEOL Nanoscale Ferroelectric Field-effect Transistors Shao, Y., Kim, M., Huang, J., Antoniadis, D. A., del Alamo, J. A., IEEE IEEE. 2025

  View details for DOI 10.1109/IEDM50572.2025.11353755

  View details for Web of Science ID 001701480300194

• Enhancement-mode BEOL In₂O₃ FETs with Record Logic Performance: Experiments and Compact Modeling Shao, Y., Ma, D., Antoniadis, D. A., Wei, L., del Alamo, J. A., IEEE IEEE. 2025

  View details for DOI 10.1109/IEDM50572.2025.11353484

  View details for Web of Science ID 001701480300007

• Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement NATURE ELECTRONICS Shao, Y., Pala, M., Tang, H., Wang, B., Li, J., Esseni, D., del Alamo, J. A. 2025; 8 (2): 157-167

  View details for DOI 10.1038/s41928-024-01279-w

  View details for Web of Science ID 001349332800002

• Highly-Scaled BEOL E-mode Transistor and Discrete-Domain Ferroelectric Memory Platform Enabled by PEALD In₂O₃ Shao, Y., Huang, J., Borujeny, E., Espedal, T. E., Antoniadis, D. A., del Alamo, J. A., IEEE IEEE. 2024

  View details for DOI 10.1109/IEDM50854.2024.10873392

  View details for Web of Science ID 001692734400074

• Sub-10-nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs IEEE ELECTRON DEVICE LETTERS Shao, Y., del Alamo, J. A. 2022; 43 (6): 846-849

  View details for DOI 10.1109/LED.2022.3166846

  View details for Web of Science ID 000800191500007

• Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter IEEE TRANSACTIONS ON ELECTRON DEVICES Shao, Y., Pala, M., Esseni, D., del Alamo, J. A. 2022; 69 (4): 2188-2195

  View details for DOI 10.1109/TED.2022.3145767

  View details for Web of Science ID 000754275700001

• Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations Shao, Y., Pala, M. G., Esseni, D., del Alamo, J. A., IEEE IEEE. 2021

  View details for DOI 10.1109/IEDM19574.2021.9720540

  View details for Web of Science ID 000812325400045

• Atomic lift-off of epitaxial membranes for cooling-free infrared detection. Nature Zhang, X., Ericksen, O., Lee, S., Akl, M., Song, M. K., Lan, H., Pal, P., Suh, J. M., Lindemann, S., Ryu, J. E., Shao, Y., Zheng, X., Han, N. M., Bhatia, B., Kim, H., Kum, H. S., Chang, C. S., Shi, Y., Eom, C. B., Kim, J. 2025; 641 (8061): 98-105

  Abstract

  Recent breakthroughs in ultrathin, single-crystalline, freestanding complex oxide systems have sparked industry interest in their potential for next-generation commercial devices1,2. However, the mass production of these ultrathin complex oxide membranes has been hindered by the challenging requirement of inserting an artificial release layer between the epilayers and substrates3,4. Here we introduce a technique that achieves atomic precision lift-off of ultrathin membranes without artificial release layers to facilitate the high-throughput production of scalable, ultrathin, freestanding perovskite systems. Leveraging both theoretical insights and empirical evidence, we have identified the pivotal role of lead in weakening the interface. This insight has led to the creation of a universal exfoliation strategy that enables the production of diverse ultrathin perovskite membranes less than 10 nm. Our pyroelectric membranes demonstrate a record-high pyroelectric coefficient of 1.76 × 10-2 C m-2 K-1, attributed to their exceptionally low thickness and freestanding nature. Moreover, this method offers an approach to manufacturing cooling-free detectors that can cover the full far-infrared spectrum, marking a notable advancement in detector technology5.

  View details for DOI 10.1038/s41586-025-08874-7

  View details for PubMedID 40269153

  View details for PubMedCentralID 8891289

• The impact of interface traps on the subthreshold characteristics of III-V vertical nanowire tunnel field-effect transistors JOURNAL OF APPLIED PHYSICS Chang, C., Shao, Y., Zhang, Y., Zhang, Q., Wu, L., Zhao, X. 2025; 137 (13)

  View details for DOI 10.1063/5.0250158

  View details for Web of Science ID 001461488400001

• High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant. Nature communications Fang, Q., Yi, K., Zhai, T., Luo, S., Lin, C. Y., Ai, Q., Zhu, Y., Zhang, B., Alvarez, G. A., Shao, Y., Zhou, H., Gao, G., Liu, Y., Xu, R., Zhang, X., Wang, Y., Tian, X., Zhang, H., Han, Y., Zhu, H., Zhao, Y., Tian, Z., Zhong, Y., Liu, Z., Lou, J. 2024; 15 (1): 10780

  Abstract

  As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young's modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.

  View details for DOI 10.1038/s41467-024-53935-6

  View details for PubMedID 39737907

  View details for PubMedCentralID PMC11685926

• Selective visible-light-driven photocatalytic CO₂ reduction to CH₄ mediated by atomically thin CuIn₅S₈ layers NATURE ENERGY Li, X., Sun, Y., Xu, J., Shao, Y., Wu, J., Xu, X., Pan, Y., Ju, H., Zhu, J., Xie, Y. 2019; 4 (8): 690-699

  View details for DOI 10.1038/s41560-019-0431-1

  View details for Web of Science ID 000481484400017

• Cu diffusion in CdTe detected by nano-metal-plasmonic enhanced resonant Raman scattering JOURNAL OF APPLIED PHYSICS Shao, Y., Li, X., Wu, L., Wang, D. 2019; 125 (1)

  View details for DOI 10.1063/1.5051191

  View details for Web of Science ID 000455350200004