Ali Ebadi Yekta

All Publications

• Material and electrical characterization of ultrawide bandgap BN/AlN metal-insulator-semiconductor (MIS) Schottky diodes JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Mudiyanselage, D., Yekta, A., Mandia, R., Da, B., Wang, D., He, Z., Xie, J., Smith, D. J., Nemanich, R. J., Fu, H. 2025; 43 (6)

  View details for DOI 10.1116/6.0004820

  View details for Web of Science ID 001618988400001

• Band offset between cubic boron nitride and nitrogen-plasma terminated boron-doped diamond (111) APPLIED PHYSICS LETTERS Ebadi Yekta, A., Mccartney, M. R., Smith, D. J., Tokuda, N., Nemanich, R. J. 2025; 127 (17)

  View details for DOI 10.1063/5.0278816

  View details for Web of Science ID 001602941800001

• On-chip direct synthesis of boron nitride memristors NATURE NANOTECHNOLOGY Xie, J., Yekta, A., Al Mamun, F., Zhu, K., Chen, M., Pazos, S., Zheng, W., Zhang, X., Tongay, S., Li, X., Wu, H., Nemanich, R., Akinwande, D., Lanza, M., Sanchez Esqueda, I. 2025; 20 (11): 1596-1604

  Abstract

  Two-dimensional materials hold promise for advanced complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS electronics, including neuromorphic and in-memory computing. Hexagonal boron nitride (hBN) is particularly attractive for non-volatile resistive-switching devices (that is, memristors) due to its outstanding electronic, mechanical and chemical stability. However, integrating hBN memristors with Si-CMOS electronics faces challenges as it requires either high-temperature synthesis (exceeding thermal budgets) or transfer methods that introduce defects, impacting device performance and reliability. Here we introduce the synthesis of hBN films at CMOS-compatible temperatures (<380 °C) using electron cyclotron resonance plasma-enhanced chemical vapour deposition to realize transfer-free, CMOS-compatible hBN memristors with outstanding electrical characteristics. Our studies indicate a polycrystalline structure with turbostratic features in as-deposited hBN films and good wafer-level uniformity in morphology (size, shape and orientation). We demonstrate a large array of hBN memristors achieving high yield (~90%), stability (endurance, retention and repeatability), programming precision for multistate operation (>16 states) and low-frequency noise performance with minimal random telegraph noise. Furthermore, we directly integrate memristive devices on industrial CMOS test vehicles to demonstrate excellent endurance, achieving millions of programming cycles with a high technology readiness level. This represents an important step towards the wafer-scale CMOS integration of hBN-memristor-based electronics.

  View details for DOI 10.1038/s41565-025-01988-z

  View details for Web of Science ID 001542121800001

  View details for PubMedID 40745006

  View details for PubMedCentralID 10940724