Bio

Srabanti Chowdhury is an associate professor of Electrical Engineering (EE) and a Senior Fellow of Precourt Institute at Stanford. She leads the Widebandgap Lab at Stanford where her research focuses on the wideband gap (WBG) and ultra-wide bandgap (UWBG) materials and device engineering for energy-efficient and compact system architecture for electronics including power RF and computation applications. Besides Gallium Nitride, her group is exploring Diamond for various active and passive electronic applications, particularly thermal management.
Srabanti received her M.S and Ph.D. in Electrical Engineering from the University of California, Santa Barbara working on Vertical GaN Switches.
She received the DARPA Young Faculty Award, NSF CAREER, and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). She is a senior member of IEEE and an alumni of NAE Frontiers of Engineering. She received the Alfred P. Sloan fellowship in Physics in 2020. To date, her work has produced over 6 book chapters, 90 journal papers, 110 conference presentations, and 26 issued patents. She serves the program committee of several IEEE conferences including IRPS and VLSI Symposium, and the executive committee of IEDM. She serves as the Associate Editor of Transaction Electron Devices as well as two committees under IEEE Electron Device Society (Compound Semiconductor Devices & Circuits Committee Members and Power Devices and ICs Committee). She is the Science Collaboration Director of the US Department of Energy Funded Energy Frontier Research Center, called ULTRA

Academic Appointments

Honors & Awards

  • Sloan Research Fellow in Physics, Alfred P. Sloan Foundation (2020)
  • NAE Frontier of Engineering (symposium invitee and alumni), National Academy of Engineering (2019)
  • Gabilan Fellow, Stanford University (2019)
  • William George and Ida Mary Hoover Faculty Fellow, Stanford University (2019)
  • Advisor of student (Dong Ji) receiving Anil Kr. Jain award for best dissertation, Electrical and Computer Engineering, UC Davis (2018)
  • IEEE Senior Member, Institute of Electrical and Electronics Engineers (IEEE) (2017)
  • Advisor of student (Dong Ji) receiving Outstanding Student Abroad Award, Chinese Government (2016)
  • Young Scientist Award, International Symposium on Compound Semiconductors (ISCS) (2016)
  • Fulton Faculty Development Chair for outstanding research, Arizona State University (2015)
  • NSF CAREER Award, National Foundation of Science (2015)
  • Young Faculty Award (YFA), Defense Advanced Research Projects Agency (2015)
  • Young Investigator Program Award, Air Force Office of Research (2015)

Boards, Advisory Committees, Professional Organizations

  • Executive Committee Member, IEEE International Electron Devices Meeting (IEDM) (2018 - Present)
  • Program Co-Chair, Topical Workshop on Heterostructure Microelectronics (TWHM) (2018 - Present)
  • Program Committee Member, ISPlasma/IC-PLANTS (2018 - Present)
  • Subcommittee vice chair : High power electron devices, Compound Semiconductor Week 2019 (2018 - Present)
  • Subcommittee Chair for Power Devices / Compound Semiconductor and High Speed Devices Committee, IEEE International Electron Devices Meeting (IEDM) (2017 - 2018)
  • Subcommittee Member for Power Devices / Compound Semiconductor and High Speed Devices Committee, IEEE International Electron Devices Meeting (IEDM) (2015 - 2017)

Program Affiliations

  • Stanford SystemX Alliance

Contact

  • Academic
    srabanti@stanford.edu
    University - Faculty Department: Electrical Engineering Position: Assoc Professor
    • 420 Via Palou
    • Allen Building 334X
    • Stanford,  California  94305 

Additional Info

Current Research and Scholarly Interests

Wide bandap materials & devices for RF, Power and energy efficient electronics

2022-23 Courses

Stanford Advisees

All Publications

  • On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications FRONTIERS IN MATERIALS Ji, D., Chowdhury, S. 2022; 9

    View details for DOI 10.3389/fmats.2022.846418

    View details for Web of Science ID 000778456900001

  • A discussion on various experimental methods of impact ionization coefficient measurement in GaN AIP ADVANCES Ji, D., Zeng, K., Bian, Z., Shankar, B., Gunning, B. P., Binder, A., Dickerson, J. R., Aktas, O., Anderson, T. J., Kaplar, R. J., Chowdhury, S. 2022; 12 (3)

    View details for DOI 10.1063/5.0083111

    View details for Web of Science ID 000772898200002

  • Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling. ACS applied materials & interfaces Malakoutian, M., Field, D. E., Hines, N. J., Pasayat, S., Graham, S., Kuball, M., Chowdhury, S. 2021

    Abstract

    The implementation of 5G-and-beyond networks requires faster, high-performance, and power-efficient semiconductor devices, which are only possible with materials that can support higher frequencies. Gallium nitride (GaN) power amplifiers are essential for 5G-and-beyond technologies since they provide the desired combination of high frequency and high power. These applications along with terrestrial hub and backhaul communications at high power output can present severe heat removal challenges. The cooling of GaN devices with diamond as the heat spreader has gained significant momentum since device self-heating limits GaN's performance. However, one of the significant challenges in integrating polycrystalline diamond on GaN devices is maintaining the device performance while achieving a low diamond/GaN channel thermal boundary resistance. In this study, we achieved a record-low thermal boundary resistance of around 3.1 ± 0.7 m2 K/GW at the diamond/Si3N4/GaN interface, which is the closest to theoretical prediction to date. The diamond was integrated within 1 nm of the GaN channel layer without degrading the channel's electrical behavior. Furthermore, we successfully minimized the residual stress in the diamond layer, enabling more isotropic polycrystalline diamond growth on GaN with thicknesses >2 mum and a 1.9 mum lateral grain size. More isotropic grains can spread the heat in both vertical and lateral directions efficiently. Using transient thermoreflectance, the thermal conductivity of the grains was measured to be 638 ± 48 W/m K, which when combined with the record-low thermal boundary resistance makes it a leading-edge achievement.

    View details for DOI 10.1021/acsami.1c13833

    View details for PubMedID 34875169

  • Demonstration of Monolithic Polycrystalline Diamond-GaN Complementary FET Technology for High-Temperature Applications ACS APPLIED ELECTRONIC MATERIALS Ren, C., Malakoutian, M., Li, S., Ercan, B., Chowdhury, S. 2021; 3 (10): 4418-4423

    View details for DOI 10.1021/acsaelm.1c00571

    View details for Web of Science ID 000711759300015

  • A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices APPLIED PHYSICS LETTERS Choi, S., Graham, S., Chowdhury, S., Heller, E. R., Tadjer, M. J., Moreno, G., Narumanchi, S. 2021; 119 (17)

    View details for DOI 10.1063/5.0056271

    View details for Web of Science ID 000715601800001

  • Oxidation Behavior of InAlN during Rapid Thermal Annealing PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Thron, A. M., Gao, J., Ercan, B., Laurent, M. A., Chowdhury, S., van Benthem, K. 2021

    View details for DOI 10.1002/pssa.202100304

    View details for Web of Science ID 000686353400001

  • Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY Shoemaker, D., Malakoutian, M., Chatterjee, B., Song, Y., Kim, S., Foley, B. M., Graham, S., Nordquist, C. D., Chowdhury, S., Choi, S. 2021; 11 (8): 1177-1186

    View details for DOI 10.1109/TCPMT.2021.3091555

    View details for Web of Science ID 000685887800009

  • Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part I IEEE TRANSACTIONS ON ELECTRON DEVICES Fu, H., Fu, K., Chowdhury, S., Palacios, T., Zhao, Y. 2021; 68 (7): 3200-3211

    View details for DOI 10.1109/TED.2021.3083239

    View details for Web of Science ID 000675200600001

  • Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part II IEEE TRANSACTIONS ON ELECTRON DEVICES Fu, H., Fu, K., Chowdhury, S., Palacios, T., Zhao, Y. 2021; 68 (7): 3212-3222

    View details for DOI 10.1109/TED.2021.3083209

    View details for Web of Science ID 000675200600002

  • Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology CRYSTAL GROWTH & DESIGN Malakoutian, M., Ren, C., Woo, K., Li, H., Chowdhury, S. 2021; 21 (5): 2624-2632

    View details for DOI 10.1021/acs.cgd.0c01319

    View details for Web of Science ID 000648580100007

  • Polycrystalline diamond growth on beta-Ga2O3 for thermal management APPLIED PHYSICS EXPRESS Malakoutian, M., Song, Y., Yuan, C., Ren, C., Lundh, J., Lavelle, R. M., Brown, J. E., Snyder, D. W., Graham, S., Choi, S., Chowdhury, S. 2021; 14 (5)

    View details for DOI 10.35848/1882-0786/abf4f1

    View details for Web of Science ID 000641029300001

  • Electro-Thermal Investigation of GaN Vertical Trench MOSFETs IEEE ELECTRON DEVICE LETTERS Chatterjee, B., Ji, D., Agarwal, A., Chan, S. H., Chowdhury, S., Choi, S. 2021; 42 (5): 723-726

    View details for DOI 10.1109/LED.2021.3065362

    View details for Web of Science ID 000645061400021

  • Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination Zeng, K., Chowdhury, S., Gunning, B., Kaplar, R., Anderson, T., IEEE IEEE. 2021

    View details for DOI 10.1109/IRPS46558.2021.9405165

    View details for Web of Science ID 000672563100076

  • On impact ionization and avalanche in gallium nitride APPLIED PHYSICS LETTERS Ji, D., Chowdhury, S. 2020; 117 (25)

    View details for DOI 10.1063/5.0031504

    View details for Web of Science ID 000603064200007

  • Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation IEEE TRANSACTIONS ON ELECTRON DEVICES Zeng, K., Chowdhury, S. 2020; 67 (6): 2457–62

    View details for DOI 10.1109/TED.2020.2987040

    View details for Web of Science ID 000538163700037

  • 60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525K APPLIED PHYSICS LETTERS Ji, D., Ercan, B., Benson, G., Newaz, A. M., Chowdhury, S. 2020; 116 (21)

    View details for DOI 10.1063/1.5140005

    View details for Web of Science ID 000537750600001

  • Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m $\Omega\cdot$ cm(2)/1500 V GaN Diodes IEEE ELECTRON DEVICE LETTERS Ji, D., Li, S., Ercan, B., Ren, C., Chowdhury, S. 2020; 41 (2): 264–67

    View details for DOI 10.1109/LED.2019.2960349

    View details for Web of Science ID 000510750200015

  • Experimental Determination of Velocity-Field Characteristic of Holes in GaN IEEE ELECTRON DEVICE LETTERS Ji, D., Ercan, B., Chowdhury, S. 2020; 41 (1): 23–25

    View details for DOI 10.1109/LED.2019.2953873

    View details for Web of Science ID 000507305400006

  • Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature Ren, C., Malakoutian, M., Li, S., Chowdhury, S., IEEE IEEE. 2020

    View details for Web of Science ID 000615719100010

  • Robust avalanche in GaN leading to record performance in avalanche photodiode Ji, D., Ercan, B., Benson, G., Newaz, A. M., Chowdhury, S., IEEE IEEE. 2020

    View details for Web of Science ID 000612717200130

  • Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode Ji, D., Ercan, B., Zhuang, J., Gu, L., Rivas-Davila, J., Chowdhury, S., IEEE IEEE. 2020

    View details for Web of Science ID 000615719100031

  • A Study on the First-Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Chun, J., Li, S., Malakoutian, M., Ji, D., Chowdhury, S. 2019

    View details for DOI 10.1002/pssb.201900545

    View details for Web of Science ID 000497179400001

  • A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN CRYSTALS Malakoutian, M., Laurent, M. A., Chowdhury, S. 2019; 9 (10)

    View details for DOI 10.3390/cryst9100498

    View details for Web of Science ID 000498263500013

  • Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures APPLIED PHYSICS LETTERS Ji, D., Ercan, B., Chowdhury, S. 2019; 115 (7)

    View details for DOI 10.1063/1.5099245

    View details for Web of Science ID 000481469900011

  • A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor IEEE ELECTRON DEVICE LETTERS Rajabi, S., Mandal, S., Ercan, B., Li, H., Laurent, M. A., Keller, S., Chowdhury, S. 2019; 40 (6): 885–88

    View details for DOI 10.1109/LED.2019.2914026

    View details for Web of Science ID 000469848300011

  • Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) Ruzzarin, M., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Ji, D., Li, W., Chan, S. H., Agarwal, A., Gupta, C., Keller, S., Mishra, U. K., Chowdhury, S., IEEE IEEE. 2019

    View details for Web of Science ID 000474762500150

  • Experimental Determination of Hole Impact Ionization Coefficient and Saturation Velocity in GaN Ji, D., Ercan, B., Chowdhury, S., IEEE IEEE. 2019

    View details for Web of Science ID 000539485600361

  • Processing of GaN vertical devices: Static Induction Transistors Chowdhury, S., Chun, J., IEEE IEEE. 2019

    View details for Web of Science ID 000539485600342

  • The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates JOURNAL OF ELECTRONIC PACKAGING Song, Y., Lundh, J., Wang, W., Leach, J. H., Eichfeld, D., Krishnan, A., Perez, C., Ji, D., Borman, T., Ferri, K., Maria, J., Chowdhury, S., Ryou, J., Foley, B. M., Choi, S. 2020; 142 (4)

    View details for DOI 10.1115/1.4047578

    View details for Web of Science ID 000591576500009

  • Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond PHYSICAL REVIEW B Peterson, R., Malakoutian, M., Xu, X., Chapin, C., Chowdhury, S., Senesky, D. G. 2020; 102 (7)

    View details for DOI 10.1103/PhysRevB.102.075303

    View details for Web of Science ID 000557726800002

https://orcid.org/0000-0001-8367-0461