
Srabanti Chowdhury
Associate Professor of Electrical Engineering and Center Fellow, by courtesy, at the Precourt Institute for Energy
Web page: http://web.stanford.edu/people/srabanti
Bio
Srabanti Chowdhury is an Associate Professor of Electrical Engineering (EE) at Stanford. Her research focuses on wideband gap (WBG) materials and device engineering for energy efficient and compact system architecture for power electronics, and RF applications. Besides Gallium Nitride, her group is exploring Diamond for various electronic applications. She received her B.Tech in India in Radiophysics and Electronics (Univ. of Calcutta) and her M.S and PhD in Electrical Engineering from University of California, Santa Barbara. She received the DARPA Young Faculty Award, NSF CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). Among her various synergistic activities, she serves as the member of two committees under IEEE Electron Device Society (Compound Semiconductor Devices & Circuits Committee Members and Power Devices and ICs Committee). She has served the IEEE International Electron Devices Meeting (IEDM) technical sub committee on Power Devices & Compound Semiconductor and High Speed Devices (PC) sub-committee in 2016 and 2017. She was the PC subcommittee chair for IEDM-2018, and continues to serve the IEDM executive committee for 2019. She is a senior member of IEEE.
Academic Appointments
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Associate Professor, Electrical Engineering
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Center Fellow (By courtesy), Precourt Institute for Energy
Honors & Awards
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Sloan Research Fellow in Physics, Alfred P. Sloan Foundation (2020)
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NAE Frontier of Engineering (symposium invitee and alumni), National Academy of Engineering (2019)
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Gabilan Fellow, Stanford University (2019)
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William George and Ida Mary Hoover Faculty Fellow, Stanford University (2019)
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Advisor of student (Dong Ji) receiving Anil Kr. Jain award for best dissertation, Electrical and Computer Engineering, UC Davis (2018)
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IEEE Senior Member, Institute of Electrical and Electronics Engineers (IEEE) (2017)
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Advisor of student (Dong Ji) receiving Outstanding Student Abroad Award, Chinese Government (2016)
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Young Scientist Award, International Symposium on Compound Semiconductors (ISCS) (2016)
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Fulton Faculty Development Chair for outstanding research, Arizona State University (2015)
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NSF CAREER Award, National Foundation of Science (2015)
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Young Faculty Award (YFA), Defense Advanced Research Projects Agency (2015)
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Young Investigator Program Award, Air Force Office of Research (2015)
Boards, Advisory Committees, Professional Organizations
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Executive Committee Member, IEEE International Electron Devices Meeting (IEDM) (2018 - Present)
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Program Co-Chair, Topical Workshop on Heterostructure Microelectronics (TWHM) (2018 - Present)
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Program Committee Member, ISPlasma/IC-PLANTS (2018 - Present)
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Subcommittee vice chair : High power electron devices, Compound Semiconductor Week 2019 (2018 - Present)
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Subcommittee Chair for Power Devices / Compound Semiconductor and High Speed Devices Committee, IEEE International Electron Devices Meeting (IEDM) (2017 - 2018)
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Subcommittee Member for Power Devices / Compound Semiconductor and High Speed Devices Committee, IEEE International Electron Devices Meeting (IEDM) (2015 - 2017)
Program Affiliations
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Stanford SystemX Alliance
Current Research and Scholarly Interests
Wide bandap materials & devices for RF, Power and energy efficient electronics
2020-21 Courses
- Principles and Models of Semiconductor Devices
EE 216 (Win) - Semiconductor Devices for Energy and Electronics
EE 116 (Aut) - Special Topics on Wide Bandgap Materials and Devices
EE 317 (Spr) -
Independent Studies (2)
- Master's Research
MATSCI 200 (Aut, Win) - Special Studies and Reports in Electrical Engineering
EE 391 (Aut, Win, Sum)
- Master's Research
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Prior Year Courses
2019-20 Courses
- Principles and Models of Semiconductor Devices
EE 216 (Aut) - Special Topics on Wide Bandgap Materials and Devices
EE 317 (Spr)
2018-19 Courses
- Principles and Models of Semiconductor Devices
Stanford Advisees
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Doctoral Dissertation Reader (AC)
Aaron Goldin, Thomas Heuser, Anand Lalwani, Koosha Nassiri Nazif -
Postdoctoral Faculty Sponsor
Jaeyi Chun, Kwangjae Lee, Mohamadali Malakoutian, Bhawani Shankar, Rohith Soman, Ke Zeng -
Doctoral Dissertation Advisor (AC)
ZHENGLIANG BIAN, Seungbin Jeong, Kelly Woo -
Master's Program Advisor
Maliha Noshin, Xiaolin Wu -
Doctoral (Program)
Sebastian Fernandez, Shreyas Muralidharan, Rafael Perez Martinez, Dennis Rich, Xinyi Wen
All Publications
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On impact ionization and avalanche in gallium nitride
APPLIED PHYSICS LETTERS
2020; 117 (25)
View details for DOI 10.1063/5.0031504
View details for Web of Science ID 000603064200007
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Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation
IEEE TRANSACTIONS ON ELECTRON DEVICES
2020; 67 (6): 2457–62
View details for DOI 10.1109/TED.2020.2987040
View details for Web of Science ID 000538163700037
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60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525K
APPLIED PHYSICS LETTERS
2020; 116 (21)
View details for DOI 10.1063/1.5140005
View details for Web of Science ID 000537750600001
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Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m $\Omega\cdot$ cm(2)/1500 V GaN Diodes
IEEE ELECTRON DEVICE LETTERS
2020; 41 (2): 264–67
View details for DOI 10.1109/LED.2019.2960349
View details for Web of Science ID 000510750200015
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Experimental Determination of Velocity-Field Characteristic of Holes in GaN
IEEE ELECTRON DEVICE LETTERS
2020; 41 (1): 23–25
View details for DOI 10.1109/LED.2019.2953873
View details for Web of Science ID 000507305400006
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Robust avalanche in GaN leading to record performance in avalanche photodiode
IEEE. 2020
View details for Web of Science ID 000612717200130
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Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature
IEEE. 2020
View details for Web of Science ID 000615719100010
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Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode
IEEE. 2020
View details for Web of Science ID 000615719100031
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A Study on the First-Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
2019
View details for DOI 10.1002/pssb.201900545
View details for Web of Science ID 000497179400001
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A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN
CRYSTALS
2019; 9 (10)
View details for DOI 10.3390/cryst9100498
View details for Web of Science ID 000498263500013
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Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures
APPLIED PHYSICS LETTERS
2019; 115 (7)
View details for DOI 10.1063/1.5099245
View details for Web of Science ID 000481469900011
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A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor
IEEE ELECTRON DEVICE LETTERS
2019; 40 (6): 885–88
View details for DOI 10.1109/LED.2019.2914026
View details for Web of Science ID 000469848300011
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Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs)
IEEE. 2019
View details for Web of Science ID 000474762500150
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Experimental Determination of Hole Impact Ionization Coefficient and Saturation Velocity in GaN
IEEE. 2019
View details for Web of Science ID 000539485600361
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Processing of GaN vertical devices: Static Induction Transistors
IEEE. 2019
View details for Web of Science ID 000539485600342
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The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates
JOURNAL OF ELECTRONIC PACKAGING
2020; 142 (4)
View details for DOI 10.1115/1.4047578
View details for Web of Science ID 000591576500009
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Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond
PHYSICAL REVIEW B
2020; 102 (7)
View details for DOI 10.1103/PhysRevB.102.075303
View details for Web of Science ID 000557726800002