Bio

Srabanti Chowdhury is an Associate Professor of Electrical Engineering (EE) at Stanford. Her research focuses on wideband gap (WBG) materials and device engineering for energy efficient and compact system architecture for power electronics, and RF applications. Besides Gallium Nitride, her group is exploring Diamond for various electronic applications. She received her B.Tech in India in Radiophysics and Electronics (Univ. of Calcutta) and her M.S and PhD in Electrical Engineering from University of California, Santa Barbara. She received the DARPA Young Faculty Award, NSF CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). Among her various synergistic activities, she serves as the member of two committees under IEEE Electron Device Society (Compound Semiconductor Devices & Circuits Committee Members and Power Devices and ICs Committee). She has served the IEEE International Electron Devices Meeting (IEDM) technical sub committee on Power Devices & Compound Semiconductor and High Speed Devices (PC) sub-committee in 2016 and 2017. She was the PC subcommittee chair for IEDM-2018, and continues to serve the IEDM executive committee for 2019. She is a senior member of IEEE.

Academic Appointments

Honors & Awards

  • Sloan Research Fellow in Physics, Alfred P. Sloan Foundation (2020)
  • NAE Frontier of Engineering (symposium invitee and alumni), National Academy of Engineering (2019)
  • Gabilan Fellow, Stanford University (2019)
  • William George and Ida Mary Hoover Faculty Fellow, Stanford University (2019)
  • Advisor of student (Dong Ji) receiving Anil Kr. Jain award for best dissertation, Electrical and Computer Engineering, UC Davis (2018)
  • IEEE Senior Member, Institute of Electrical and Electronics Engineers (IEEE) (2017)
  • Advisor of student (Dong Ji) receiving Outstanding Student Abroad Award, Chinese Government (2016)
  • Young Scientist Award, International Symposium on Compound Semiconductors (ISCS) (2016)
  • Fulton Faculty Development Chair for outstanding research, Arizona State University (2015)
  • NSF CAREER Award, National Foundation of Science (2015)
  • Young Faculty Award (YFA), Defense Advanced Research Projects Agency (2015)
  • Young Investigator Program Award, Air Force Office of Research (2015)

Boards, Advisory Committees, Professional Organizations

  • Executive Committee Member, IEEE International Electron Devices Meeting (IEDM) (2018 - Present)
  • Program Co-Chair, Topical Workshop on Heterostructure Microelectronics (TWHM) (2018 - Present)
  • Program Committee Member, ISPlasma/IC-PLANTS (2018 - Present)
  • Subcommittee vice chair : High power electron devices, Compound Semiconductor Week 2019 (2018 - Present)
  • Subcommittee Chair for Power Devices / Compound Semiconductor and High Speed Devices Committee, IEEE International Electron Devices Meeting (IEDM) (2017 - 2018)
  • Subcommittee Member for Power Devices / Compound Semiconductor and High Speed Devices Committee, IEEE International Electron Devices Meeting (IEDM) (2015 - 2017)

Program Affiliations

  • Stanford SystemX Alliance

Contact

  • Academic
    srabanti@stanford.edu
    University - Faculty Department: Electrical Engineering Position: Assoc Professor
    • 420 Via Palou
    • Allen Building 334X
    • Stanford,  California  94305 

Additional Info

  • Mail Code: 4075

Current Research and Scholarly Interests

Wide bandap materials & devices for RF, Power and energy efficient electronics

2021-22 Courses

Stanford Advisees

All Publications

  • Oxidation Behavior of InAlN during Rapid Thermal Annealing PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Thron, A. M., Gao, J., Ercan, B., Laurent, M. A., Chowdhury, S., van Benthem, K. 2021

    View details for DOI 10.1002/pssa.202100304

    View details for Web of Science ID 000686353400001

  • Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY Shoemaker, D., Malakoutian, M., Chatterjee, B., Song, Y., Kim, S., Foley, B. M., Graham, S., Nordquist, C. D., Chowdhury, S., Choi, S. 2021; 11 (8): 1177-1186

    View details for DOI 10.1109/TCPMT.2021.3091555

    View details for Web of Science ID 000685887800009

  • Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part I IEEE TRANSACTIONS ON ELECTRON DEVICES Fu, H., Fu, K., Chowdhury, S., Palacios, T., Zhao, Y. 2021; 68 (7): 3200-3211

    View details for DOI 10.1109/TED.2021.3083239

    View details for Web of Science ID 000675200600001

  • Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part II IEEE TRANSACTIONS ON ELECTRON DEVICES Fu, H., Fu, K., Chowdhury, S., Palacios, T., Zhao, Y. 2021; 68 (7): 3212-3222

    View details for DOI 10.1109/TED.2021.3083209

    View details for Web of Science ID 000675200600002

  • Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology CRYSTAL GROWTH & DESIGN Malakoutian, M., Ren, C., Woo, K., Li, H., Chowdhury, S. 2021; 21 (5): 2624-2632

    View details for DOI 10.1021/acs.cgd.0c01319

    View details for Web of Science ID 000648580100007

  • Polycrystalline diamond growth on beta-Ga2O3 for thermal management APPLIED PHYSICS EXPRESS Malakoutian, M., Song, Y., Yuan, C., Ren, C., Lundh, J., Lavelle, R. M., Brown, J. E., Snyder, D. W., Graham, S., Choi, S., Chowdhury, S. 2021; 14 (5)

    View details for DOI 10.35848/1882-0786/abf4f1

    View details for Web of Science ID 000641029300001

  • Electro-Thermal Investigation of GaN Vertical Trench MOSFETs IEEE ELECTRON DEVICE LETTERS Chatterjee, B., Ji, D., Agarwal, A., Chan, S. H., Chowdhury, S., Choi, S. 2021; 42 (5): 723-726

    View details for DOI 10.1109/LED.2021.3065362

    View details for Web of Science ID 000645061400021

  • Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination Zeng, K., Chowdhury, S., Gunning, B., Kaplar, R., Anderson, T., IEEE IEEE. 2021

    View details for DOI 10.1109/IRPS46558.2021.9405165

    View details for Web of Science ID 000672563100076

  • On impact ionization and avalanche in gallium nitride APPLIED PHYSICS LETTERS Ji, D., Chowdhury, S. 2020; 117 (25)

    View details for DOI 10.1063/5.0031504

    View details for Web of Science ID 000603064200007

  • Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation IEEE TRANSACTIONS ON ELECTRON DEVICES Zeng, K., Chowdhury, S. 2020; 67 (6): 2457–62

    View details for DOI 10.1109/TED.2020.2987040

    View details for Web of Science ID 000538163700037

  • 60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525K APPLIED PHYSICS LETTERS Ji, D., Ercan, B., Benson, G., Newaz, A. M., Chowdhury, S. 2020; 116 (21)

    View details for DOI 10.1063/1.5140005

    View details for Web of Science ID 000537750600001

  • Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m $\Omega\cdot$ cm(2)/1500 V GaN Diodes IEEE ELECTRON DEVICE LETTERS Ji, D., Li, S., Ercan, B., Ren, C., Chowdhury, S. 2020; 41 (2): 264–67

    View details for DOI 10.1109/LED.2019.2960349

    View details for Web of Science ID 000510750200015

  • Experimental Determination of Velocity-Field Characteristic of Holes in GaN IEEE ELECTRON DEVICE LETTERS Ji, D., Ercan, B., Chowdhury, S. 2020; 41 (1): 23–25

    View details for DOI 10.1109/LED.2019.2953873

    View details for Web of Science ID 000507305400006

  • Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature Ren, C., Malakoutian, M., Li, S., Chowdhury, S., IEEE IEEE. 2020

    View details for Web of Science ID 000615719100010

  • Robust avalanche in GaN leading to record performance in avalanche photodiode Ji, D., Ercan, B., Benson, G., Newaz, A. M., Chowdhury, S., IEEE IEEE. 2020

    View details for Web of Science ID 000612717200130

  • Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode Ji, D., Ercan, B., Zhuang, J., Gu, L., Rivas-Davila, J., Chowdhury, S., IEEE IEEE. 2020

    View details for Web of Science ID 000615719100031

  • A Study on the First-Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Chun, J., Li, S., Malakoutian, M., Ji, D., Chowdhury, S. 2019

    View details for DOI 10.1002/pssb.201900545

    View details for Web of Science ID 000497179400001

  • A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN CRYSTALS Malakoutian, M., Laurent, M. A., Chowdhury, S. 2019; 9 (10)

    View details for DOI 10.3390/cryst9100498

    View details for Web of Science ID 000498263500013

  • Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures APPLIED PHYSICS LETTERS Ji, D., Ercan, B., Chowdhury, S. 2019; 115 (7)

    View details for DOI 10.1063/1.5099245

    View details for Web of Science ID 000481469900011

  • A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor IEEE ELECTRON DEVICE LETTERS Rajabi, S., Mandal, S., Ercan, B., Li, H., Laurent, M. A., Keller, S., Chowdhury, S. 2019; 40 (6): 885–88

    View details for DOI 10.1109/LED.2019.2914026

    View details for Web of Science ID 000469848300011

  • Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) Ruzzarin, M., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Ji, D., Li, W., Chan, S. H., Agarwal, A., Gupta, C., Keller, S., Mishra, U. K., Chowdhury, S., IEEE IEEE. 2019

    View details for Web of Science ID 000474762500150

  • Experimental Determination of Hole Impact Ionization Coefficient and Saturation Velocity in GaN Ji, D., Ercan, B., Chowdhury, S., IEEE IEEE. 2019

    View details for Web of Science ID 000539485600361

  • Processing of GaN vertical devices: Static Induction Transistors Chowdhury, S., Chun, J., IEEE IEEE. 2019

    View details for Web of Science ID 000539485600342

  • The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates JOURNAL OF ELECTRONIC PACKAGING Song, Y., Lundh, J., Wang, W., Leach, J. H., Eichfeld, D., Krishnan, A., Perez, C., Ji, D., Borman, T., Ferri, K., Maria, J., Chowdhury, S., Ryou, J., Foley, B. M., Choi, S. 2020; 142 (4)

    View details for DOI 10.1115/1.4047578

    View details for Web of Science ID 000591576500009

  • Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond PHYSICAL REVIEW B Peterson, R., Malakoutian, M., Xu, X., Chapin, C., Chowdhury, S., Senesky, D. G. 2020; 102 (7)

    View details for DOI 10.1103/PhysRevB.102.075303

    View details for Web of Science ID 000557726800002