Stanford University
Showing 81-100 of 754 Results
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Hugo Chen
Ph.D. Student in Electrical Engineering, admitted Autumn 2022
BioHugo "Jiun-Yu" Chen is currently pursuing his Ph.D. degree in the Department of Electrical Engineering at Stanford University. He earned his M.S. in Photonics and Optoelectronics from National Taiwan University in 2019 and his B.S. in Materials Science and Engineering from National Dong Hwa University in 2017.
Prior to joining Stanford, Hugo worked as an R&D engineer at Taiwan Semiconductor Manufacturing Company (TSMC) in the High Power Program and Analog Power/RF Specialty Technology from 2019 to 2022. His research experience includes investigating GaN high electron mobility transistors (HEMTs) for high power converter applications, oxide-based thin-film transistors (TFTs) for CMOS inverter applications, and III-V quantum dots molecular beam epitaxy (MBE) material growth.
As the first author, Hugo has published two peer-reviewed journal articles, six conference papers, and one US/KR/TW/CN/DE patent. He is currently advised by Professors H.-S. Philip Wong and Kwabena Boahen, and his research focuses on developing ferroelectric field-effect transistors (FeFETs) for dendritic-centric learning.
In his leisure time, Hugo enjoys biking, playing badminton, and watching dramas. -
Jian Chen
Adjunct Professor, Electrical Engineering
BioRetired executive with 30 years of experience in NOR, 2D NAND and 3D NAND flash memories, in the areas of device physics, process integration, reliability, test & product engineering, memory systems architecture, eco-systems and new business development. With a passion for innovation and practical solutions and teamwork, built multiple teams from ground up including at international sites.
Inventor of >150 US patents and some significant ideals that have been used in over 10 generations of NAND memory chip and systems, such as binary cache for MLC (USP# 5,930,167 ), fast MLC NAND writing method GPW (USP# 6,522,580 and 6,643,188 ), read method to correct cell to cell coupling effect (USP#5,867,429), NAND memory WL air-gap (USP# 7,045,849 ), and highly reliable systems EPWR (USP#8,214,700, 8,386,861 aka EPWR).
Published the paper that coined the term GIDL, and the first paper that identified the physics of the GIDL current as due to band-to-band tunneling.
Google scholar h-index 57. -
Po-Han Chen
Ph.D. Student in Electrical Engineering, admitted Winter 2021
BioPo-Han Chen is an EE Ph.D. student at Stanford University supervised by Prof. Priyanka Raina. He received his B.S. in Electrical Engineering and Computer Science (EECS) and M.S. in Electrical Engineering from National Tsing Hua University (Taiwan) in 2016 and 2018 respectively. Before joining Stanford, he was a digital circuit designer at MediaTek where he worked on developing hardware architectures of image processing pipeline. He is interested in designing hardware accelerators. Most of his previous works were related to computational photography algorithms such as digital refocusing. Currently, He is focusing on analyzing and designing architecture of CGRAs to create high-performance, energy-efficient, and reconfigurable computing platforms.
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Bo Wun Cheng
Ph.D. Student in Electrical Engineering, admitted Autumn 2023
BioBo-Wun Cheng is an EE Ph.D. student at Stanford University supervised by Prof. Priyanka Raina. He received his B.S. and M.S. degrees in Computer Science from National Tsing Hua University (Taiwan) in 2021 and 2023, respectively. His current research interest resides in designing and architecting efficient hardware accelerators. Before joining Stanford, his research spans the fields of Graphics Processing Unit memory architecture design and computer vision.
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Dali Cheng
Ph.D. Student in Electrical Engineering, admitted Autumn 2021
Current Research and Scholarly InterestsA light chaser studying photonics from the theoretical perspective. I am devoted to understanding and improving our world using photonic science and engineering.
My current interest includes photonic systems with nontrivial topology, non-Hermiticity, non-Abelian gauge fields, and in the synthetic dimension.
