Bio


Jim Plummer was born in Toronto, Canada. He obtained his BS degree from UCLA and his MS and PhD degrees in Electrical Engineering from Stanford University in 1966, 1967, and 1971, respectively. From 1971 to 1978, he was a research staff member in the Integrated Circuits Lab at Stanford. He joined the Stanford faculty in 1978 as an associate professor and became professor of electrical engineering in 1983.

His career at Stanford has included serving as director of the IC Laboratory, senior associate dean in the School of Engineering, and chair of the Electrical Engineering Department. He is currently the Frederick Emmons Terman Dean of the School of Engineering. He also holds the John Fluke Professorship in Electrical Engineering.

Plummer has worked in a variety of areas in the broad field of silicon devices and technology. Much of his early work focused on high-voltage ICs and on high-voltage device structures. He and his group made important contributions to integrating CMOS logic and high-voltage lateral DMOS devices on the same chip and demonstrated circuits operating at several hundred volts. This work also led to several power MOS device concepts such as the IGBT which have become important power switching devices.

Throughout the 1980s and '90s, a major focus of his work was on silicon process modeling. This work involved many students and other faculty, particularly Professor Bob Dutton, and resulted in the development of several generations of SUPREM, which has become the standard process modeling tool used worldwide today. His recent work has focused on nanoscale silicon devices for logic and memory and has demonstrated new device concepts such as the TRAM thyristor based memory cell and the IMOS device which achieves <kT/q subthreshold slopes.

Plummer is a member of the National Academy of Engineering and a fellow of the IEEE. He has received many awards for his research, including the 1991 Solid State Science and Technology Award from the Electrochemical Society, the 2001 Semiconductor Industry Association University Research Award, and the IEEE Third Millennium Medal.

He has graduated more than 80 PhD students with whom he has published more than 400 journal papers and conference presentations. These papers have won eight conference and student best paper awards including two at IEDM and three at ISSCC. His recent textbook, "Silicon VLSI Technology: Fundamentals, Practice and Modeling," is used by many universities around the world. He has also received three teaching awards at Stanford. He serves on the Board of Directors and on the technical advisory boards of several public and start-up companies and was one of the founders of T-RAM.

Plummer directed the Stanford Nanofabrication Facility from 1994 to 2000 and received an NSF commendation in 2000 for national leadership in building the NNUN, a consortium of five universities who opened their nanofabrication facilities as national resources for industry and for students from around the nation.

Jim and his wife Patti live in Portola Valley with their two daughters, Katie and Julie.

Academic Appointments


Administrative Appointments


  • Frederick Emmons Terman Dean, Stanford School of Engineering (1999 - Present)

Honors & Awards


  • Elected Member, National Academy of Engineering (1996)
  • Elected Member, American Academy of Arts & Sciences (2008)
  • Andrew S. Grove Award, IEEE (2007)
  • Paul Rappaport Award, IEDM (2006)
  • Jacob Millman Award, McGraw-Hill (2004)
  • Aldert Van der Ziel Award, IEEE (2003)
  • J.J. Ebers Award, IEEE (2003)
  • Laurels Award - Electronics, Aviation Week & Space Technology (2003)
  • University Research Award, Semiconductor Industry Association (2001)
  • Best Paper Award, ICDS (2000)
  • Best Paper Award, MRS (2000)
  • Third Millennium Medal, IEEE (2000)
  • Best Paper Award, ISPSD (1996)
  • Best Paper Awards, IEDM (1993, 1995)
  • Teaching Awards -- Electrochem, Stanford University (1991, 1992, 1993)
  • Solid State Science & Technology Award, Society (1991)
  • Best Paper Awards, ISSCC (1970, 1976, 1978)

Professional Education


  • PhD, Stanford, Electrical Engineering (1971)
  • MS, Stanford, Electrical Engineering (1967)
  • BS, UCLA, Electrical Engineering (1966)

Current Research and Scholarly Interests


Dean Plummer studies both the physics which govern device operation in silicon integrated circuits and the technology used to fabricate these circuits. Recent work is aimed at extending silicon device structures into nanoscale dimensions.His research also explores the scaling limits of silicon technology and the application of this technology outside traditional integrated circuits.

2013-14 Courses


Journal Articles


  • Low-Temperature Monolithic 3-Layer 3-D Process for FPGA IEEE Elec. Dev. Letters Zhang, Z., Chen, C., Y, Crnogorac, F., Chen, S., L., Griffin, P., B., Pease, R., F., Plummer, J. 2013; 34 (8): 1044-1046
  • Si Incorporation From the Seed Into Ge Stripes Crystalized Using Rapid Melt Growth submitted to APL Bai, X., Chen, C., Y., Griffin, P., B., Plummer, J., D. 2013
  • Statistical Retardation Delay of I-MOS and Its Measurement Using TDR IEEE ELECTRON DEVICE LETTERS Cho, H., Onal, C., Griffin, P. B., Plummer, J. D. 2011; 32 (2): 206-208
  • A High-Resolution Low-Power Incremental Sigma Delta ADC With Extended Range for Biosensor Arrays IEEE JOURNAL OF SOLID-STATE CIRCUITS Agah, A., Vleugels, K., Griffin, P. B., Ronaghi, M., Plummer, J. D., Wooley, B. A. 2010; 45 (6): 1099-1110
  • Single-Crystal GaAs and GaSb on Insulator on Bulk Si Substrates Based on Rapid Melt Growth IEEE ELECTRON DEVICE LETTERS Chen, S., Griffin, P. B., Plummer, J. D. 2010; 31 (6): 597-599
  • Second generation monolithic full-depletion radiation sensor with integrated CMOS circuitry 2010 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD (NSS/MIC) Segal, J. D., Kenney, C. J., Parker, S. I., Aw, C. H., Snoeys, W. J., Wooley, B., Plummer, J. D. 2010: 1896-1900
  • High Quality Single-Crystal Laterally Graded SiGe on Insulator by Rapid Melt Growth ELECTROCHEMICAL AND SOLID STATE LETTERS Koh, H. S., Chen, S., Griffin, P. B., Plummer, J. D. 2010; 13 (8): H281-H283

    View details for DOI 10.1149/1.3436665

    View details for Web of Science ID 000278694500028

  • High-Resolution Low-Power Incremental ADC With Extended Range for Biosensor Arrays IEEE Journal of Solid State Circuits Agah, A., A., Vleugels, K., Griffin, P., B., Ronaghi, M., Plummer, J., D., Wooley, B., A.A 2010; 45 (6): 1099-1110
  • High-quality single-crystal laterally graded SiGe on insulator by rapid melt growth Electrochem. Soc. Solid-State Lett Koh, H., Y. Serene, Chen, S., Griffin, Peter, B., Plummer, James, D. 2010; 13 (8): 281-283
  • Negative Differential Resistance Circuit Design and Memory Applications IEEE TRANSACTIONS ON ELECTRON DEVICES Chen, S., Griffin, P. B., Plummer, J. D. 2009; 56 (4): 634-640
  • A Novel Depletion-IMOS (DIMOS) Device With Improved Reliability and Reduced Operating Voltage IEEE ELECTRON DEVICE LETTERS Onal, C., Woo, R., Koh, H. S., Griffin, P. B., Plummer, J. D. 2009; 30 (1): 64-67
  • High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts IEEE ELECTRON DEVICE LETTERS Feng, J., Thareja, G., Kobayashi, M., Chen, S., Poon, A., Bai, Y., Griffin, P. B., Wong, S. S., Nishi, Y., Plummer, J. D. 2008; 29 (7): 805-807
  • P-channel germanium FinFET based on rapid melt growth IEEE ELECTRON DEVICE LETTERS Feng, J., Woo, R., Chen, S., Liu, Y., Griffin, P. B., Plummer, J. D. 2007; 28 (7): 637-639
  • Mechanism of solid phase crystallization of prepatterned nanoscale alpha-Si pillars JOURNAL OF APPLIED PHYSICS Cho, H., Greene, B. J., Hoyt, J. L., Plummer, J. D. 2007; 101 (10)

    View details for DOI 10.1063/1.2734531

    View details for Web of Science ID 000246891500159

  • Monolithic 3D integrated circuits 2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS Wong, S., El-Gamal, A., Griffin, P., Nishi, Y., Pease, F., Plummer, J. 2007: 66-69
  • Modeling of surrounding gate MOSFETs with bulk trap states IEEE TRANSACTIONS ON ELECTRON DEVICES Cho, H., Plummer, J. D. 2007; 54 (1): 166-169
  • A high-resolution low-power oversampling ADC with extended-range for bio-sensor Arrays 2007 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS Agah, A., Vleugels, K., Griffin, P. B., Rodaghi, M., Plummer, J. D., Wooley, B. A. 2007: 244-245
  • A semiclassical model of dielectric relaxation in glasses JOURNAL OF APPLIED PHYSICS Jameson, J. R., Harrison, W., Griffin, P. B., Plummer, J. D., Nishi, Y. 2006; 100 (12)

    View details for DOI 10.1063/1.2397323

    View details for Web of Science ID 000243157900069

  • Integration of germanium-on-insulator and silicon MOSFETs on a silicon substrate IEEE ELECTRON DEVICE LETTERS Feng, J., Liu, Y., Griffin, P. B., Plummer, J. D. 2006; 27 (11): 911-913
  • Charge trapping in high-k gate stacks due to the bilayer structure itself IEEE TRANSACTIONS ON ELECTRON DEVICES Jameson, J. R., Griffin, P. B., Plummer, J. D., Nishi, Y. 2006; 53 (8): 1858-1867
  • Low resistance, low-leakage ultrashallow p(+)-junction formation using millisecond flash anneals IEEE TRANSACTIONS ON ELECTRON DEVICES Jain, S. H., Griffin, P. B., Plummer, J. D., McCoy, S., Gelpey, J., Selinger, T., Downey, D. F. 2005; 52 (7): 1610-1615
  • Novel very high IE structures based on the directed BBHE mechanism for ultralow-power flash memories IEEE ELECTRON DEVICE LETTERS Gopalakrishnan, K., Woo, R., Shenoy, R., Jono, Y., Griffin, P. B., Plummer, J. D. 2005; 26 (3): 212-215
  • Critical thickness enhancement of epitaxial SiGe films grown on small structures JOURNAL OF APPLIED PHYSICS Liang, Y., Nix, W. D., Griffin, P. B., Plummer, J. D. 2005; 97 (4)

    View details for DOI 10.1063/1.1854204

    View details for Web of Science ID 000226841900030

  • Design requirements for integrated biosensor arrays IMAGING, MANIPULATION, AND ANALYSIS OF BIOMOLECULES AND CELLS: FUNDAMENTALS AND APPLICATIONS III Agah, A., Hassibi, A., Plummer, J. D., Griffin, P. B. 2005; 5699: 403-413
  • Rapid melt growth of germanium crystals with self-aligned microcrucibles on Si substrates JOURNAL OF THE ELECTROCHEMICAL SOCIETY Liu, Y. C., Deal, M. D., Plummer, J. D. 2005; 152 (8): G688-G693

    View details for DOI 10.1149/1.1946368

    View details for Web of Science ID 000230494000076

  • Impact ionization MOS (I-MOS) - Part II: Experimental results IEEE TRANSACTIONS ON ELECTRON DEVICES Gopalakrishnan, K., Woo, R., Jungemann, C., Griffin, P. B., Plummer, J. D. 2005; 52 (1): 77-84
  • Impact ionization MOS (I-MOS) - Part I: Device and circuit simulations IEEE TRANSACTIONS ON ELECTRON DEVICES Gopalakrishnan, K., Griffin, P. B., Plummer, J. D. 2005; 52 (1): 69-76
  • From DRAM to SRAM with a novel SiGe-based negative differential resistance (NDR) device IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST Liang, Y., Gopalakrishnan, K., Griffin, P. B., Plummer, J. D. 2005: 979-982
  • Metastable boron active concentrations in Si using flash assisted solid phase epitaxy JOURNAL OF APPLIED PHYSICS Jain, S. H., Griffin, P. B., Plummer, J. D., McCoy, S., Gelpey, J., Selinger, T., Downey, D. F. 2004; 96 (12): 7357-7360

    View details for DOI 10.1063/1.1814792

    View details for Web of Science ID 000225482400059

  • Double-well model of dielectric relaxation current APPLIED PHYSICS LETTERS Jameson, J. R., Harrison, W., Griffin, P. B., Plummer, J. D. 2004; 84 (18): 3489-3491

    View details for DOI 10.1063/1.1738177

    View details for Web of Science ID 000221062500019

  • Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon JOURNAL OF APPLIED PHYSICS Takamura, Y., Marshall, A. F., Mehta, A., ARTHUR, J., Griffin, P. B., Plummer, J. D., Patel, J. R. 2004; 95 (8): 3968-3976

    View details for DOI 10.1063/1.1666975

    View details for Web of Science ID 000220586100014

  • High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates APPLIED PHYSICS LETTERS Liu, Y. C., Deal, M. D., Plummer, J. D. 2004; 84 (14): 2563-2565

    View details for DOI 10.1063/1.1691175

    View details for Web of Science ID 000220586800031

  • A multi-enzyme model for pyrosequencing NUCLEIC ACIDS RESEARCH Agah, A., Aghajan, M., Mashayekhi, F., Amini, S., Davis, R. W., Plummer, J. D., Ronaghi, M., Griffin, P. B. 2004; 32 (21)

    Abstract

    Pyrosequencing is a DNA sequencing technique based on sequencing-by-synthesis enabling rapid real-time sequence determination. This technique employs four enzymatic reactions in a single tube to monitor DNA synthesis. Nucleotides are added iteratively to the reaction and in case of incorporation, pyrophosphate (PPi) is released. PPi triggers a series of reactions resulting in production of light, which is proportional to the amount of DNA and number of incorporated nucleotides. Generated light is detected and recorded by a detector system in the form of a peak signal, which reflects the activity of all four enzymes in the reaction. We have developed simulations to model the kinetics of the enzymes. These simulations provide a full model for the Pyrosequencing four-enzyme system, based on which the peak height and shape can be predicted depending on the concentrations of enzymes and substrates. Simulation results are shown to be compatible with experimental data. Based on these simulations, the rate-limiting steps in the chain can be determined, and K(M) and kcat of all four enzymes in Pyrosequencing can be calculated.

    View details for DOI 10.1093/nar/gnh159

    View details for Web of Science ID 000225676700001

    View details for PubMedID 15576673

  • High Quality Single-crystal Ge-on-insulator by Liquid-phase Epitaxy on Si Substrates Appl. Phys. Letters Liu, Y., Deal, M., D., Plummer, J., D. 2004; 84 (14): 2563–2565
  • Metastable Active Concentrations in Si Using Flash Assisted Solid Phase Epitaxy J. Appl. Phys. Jain, S., H., Griffin, P., B., Plummer, J., D., McCoy, S., Gelpey, J., Selinger, T. 2004; 96 (12): 7357-7360
  • MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST Liu, Y. C., Gopalakrishnan, K., Griffin, P. B., Ma, K., Deal, M. D., Plummer, J. D. 2004: 1001-1004
  • Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles APPLIED PHYSICS LETTERS Aboy, M., Pelaz, L., Marques, L. A., Barbolla, J., Mokhberi, A., Takamura, Y., Griffin, P. B., Plummer, J. D. 2003; 83 (20): 4166-4168

    View details for DOI 10.1063/1.1628391

    View details for Web of Science ID 000186523400029

  • Activation and diffusion studies of ion-implanted p and n dopants in germanium APPLIED PHYSICS LETTERS Chui, C. O., Gopalakrishnan, K., Griffin, P. B., Plummer, J. D., Saraswat, K. C. 2003; 83 (16): 3275-3277

    View details for DOI 10.1063/1.1618382

    View details for Web of Science ID 000185954400015

  • Hall measurements of bilayer structures JOURNAL OF APPLIED PHYSICS Jain, S. H., Griffin, P. B., Plummer, J. D. 2003; 93 (2): 1060-1063

    View details for DOI 10.1063/1.1529093

    View details for Web of Science ID 000180134200039

  • Atomistic modeling of B activation and deactivation for ultra-shallow junction formation 2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES Aboy, M., Pelaz, L., Marques, L. A., Barbolla, J., Mokhberi, A., Takamura, Y., Griffin, P. B., Plummer, J. D. 2003: 151-154
  • School of Engineering Strategic Initiatives E-DAY Keynote Plummer, J., D. 2003
  • Stress effects on nanocrystal formation by Ni-induced crystallization of amorphous Si AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003 Liu, Y. C., Deal, M. D., Sultana, M., Plummer, J. D. 2003; 762: 669-673
  • Problems with metal-oxide high-K dielectrics due to 1/t dielectric relaxation current in amorphous materials 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST Jameson, J. R., Griffin, P. B., Agah, A., Plummer, J. D., Kim, H. S., Taylor, D. V., McIntyre, P. C., Harrison, W. A. 2003: 91-94
  • The use of laser annealing to reduce parasitic series resistances in MOS devices IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS Takamura, Y., Kim, E. H., Jain, S. H., Griffin, P. B., Plummer, J. D. 2003: 56-59
  • Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si APPLIED PHYSICS LETTERS Liu, Y. C., Deal, M. D., Saraswat, K. C., Plummer, J. D. 2002; 81 (24): 4634-4636

    View details for DOI 10.1063/1.1527977

    View details for Web of Science ID 000179611800046

  • Impact of lateral source/drain abruptness on device performance IEEE TRANSACTIONS ON ELECTRON DEVICES Kwong, M. Y., Kasnavi, R., Griffin, P., Plummer, J. D., DUTTON, R. W. 2002; 49 (11): 1882-1890
  • Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy study JOURNAL OF APPLIED PHYSICS Takamura, Y., Vailionis, A., Marshall, A. F., Griffin, P. B., Plummer, J. D. 2002; 92 (9): 5503-5507

    View details for DOI 10.1063/1.1510953

    View details for Web of Science ID 000178767200099

  • Silicon orientation effects in the initial regime of wet oxidation JOURNAL OF THE ELECTROCHEMICAL SOCIETY Ngau, J. L., Griffin, P. B., Plummer, J. D. 2002; 149 (8): F98-F101

    View details for DOI 10.1149/1.1491986

    View details for Web of Science ID 000176815100048

  • Physical processes associated with the deactivation of dopants in laser annealed silicon JOURNAL OF APPLIED PHYSICS Takamura, Y., Griffin, P. B., Plummer, J. D. 2002; 92 (1): 235-244

    View details for DOI 10.1063/1.1481974

    View details for Web of Science ID 000176314800039

  • A comparative study of dopant activation in boron, BF2, arsenic, and phosphorus implanted silicon IEEE TRANSACTIONS ON ELECTRON DEVICES Mokhberi, A., Griffin, P. B., Plummer, J. D., Paton, E., McCoy, S., Elliott, K. 2002; 49 (7): 1183-1191
  • Thermal stability of dopants in laser annealed silicon JOURNAL OF APPLIED PHYSICS Takamura, Y., Jain, S. H., Griffin, P. B., Plummer, J. D. 2002; 92 (1): 230-234

    View details for DOI 10.1063/1.1481975

    View details for Web of Science ID 000176314800038

  • Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si APPLIED PHYSICS LETTERS Mokhberi, A., Kasnavi, R., Griffin, P. B., Plummer, J. D. 2002; 80 (19): 3530-3532

    View details for DOI 10.1063/1.1479458

    View details for Web of Science ID 000175464100022

  • Atomic-scale diffusion mechanisms via intermediate species PHYSICAL REVIEW B Ural, A., Griffin, P. B., Plummer, J. D. 2002; 65 (13)
  • A physics based approach to ultra-shallow p(+)-junction formation at the 32nm node INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST Mokhberi, A., Pelaz, L., Aboy, M., Marves, L., Barbolla, J., Paton, E., McCoy, S., Ross, J., Elliott, K., Gelpey, J., Griffin, P. B., Plummer, J. D. 2002: 879-882
  • Thermal Stability of Laser Annealed Dopants in Silicon J. Appl. Physics Takamura, Y., Jain, S., Griffin, P., B., Plummer, J., D. 2002; 92: 230
  • The local structure of antimony in high dose antimony implants in silicon by XAFS and SIMS SILICON FRONT-END JUNCTION FORMATION TECHNOLOGIES Sahiner, M. A., Novak, S. W., Woicik, J. C., Takamura, Y., Griffin, P. B., Plummer, J. D. 2002; 717: 121-127
  • I-MOS: A novel semiconductor device with a subthreshold slope lower than kT/q INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST Gopalakrishnan, K., Griffin, P. B., Plummer, J. D. 2002: 289-292
  • Silicon self-diffusion under extrinsic conditions APPLIED PHYSICS LETTERS Ural, A., Griffin, P. B., Plummer, J. D. 2001; 79 (26): 4328-4330
  • Increased hot-carrier effects using SiGe layers in vertical surrounding-gate MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES Date, C. K., Plummer, J. D. 2001; 48 (12): 2690-2694
  • Suppression of the floating-body effect using SiGe layers in vertical surrounding-gate MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES Date, C. K., Plummer, J. D. 2001; 48 (12): 2684-2689
  • Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation JOURNAL OF APPLIED PHYSICS Ngau, J. L., Griffin, P. B., Plummer, J. D. 2001; 90 (4): 1768-1778
  • Study of the effect of grain boundary migration on hillock formation in Al thin films JOURNAL OF APPLIED PHYSICS Kim, D. K., Nix, W. D., Vinci, R. P., Deal, M. D., Plummer, J. D. 2001; 90 (2): 781-788
  • Material and process limits in silicon VLSI technology PROCEEDINGS OF THE IEEE Plummer, J. D., Griffin, P. B. 2001; 89 (3): 240-258
  • Modeling of the Time Evolution of Carbon Diffusion and Suppression of Boron Transient Enhanced Diffusion in SiGeC and SiC J. Appl. Physics Ngau, J., L., Griffin, P., B., Plummer, J., D. 2001; 90 (4): 1768–1779
  • Characterization of profiling techniques for ultralow energy arsenic implants ELECTROCHEMICAL AND SOLID STATE LETTERS Kasnavi, R., Sun, Y., Mount, G., Pianetta, P., Griffin, P. B., Plummer, J. D. 2001; 4 (1): G1-G3
  • Transparent probe test structure for electrical and physical characterization of defects in thin films JOURNAL OF THE ELECTROCHEMICAL SOCIETY Tringe, J. W., Deal, M. D., Plummer, J. D. 2000; 147 (12): 4633-4638
  • Comment on "Self-diffusion in silicon: Similarity between the properties of native point defects" - Ural, Griffin, and Plummer reply PHYSICAL REVIEW LETTERS Ural, A., Griffin, P. B., Plummer, J. D. 2000; 85 (22): 4836-4836
  • Hydrogen passivation in plasma-etched polycrystalline silicon resistors ELECTROCHEMICAL AND SOLID STATE LETTERS Tringe, J. W., Deal, M. D., Plummer, J. D. 2000; 3 (11): 517-519
  • A diffraction-based transmission electron microscope technique for measuring average grain size ELECTROCHEMICAL AND SOLID STATE LETTERS Tringe, J. W., Deal, M. D., Plummer, J. D. 2000; 3 (11): 520-523
  • Microstructure of thermal hillocks on blanket Al thin films THIN SOLID FILMS Kim, D., Heiland, B., Nix, W. D., Arzt, E., Deal, M. D., Plummer, J. D. 2000; 371 (1-2): 278-282
  • Creep-controlled diffusional hillock formation in blanket aluminum thin films as a mechanism of stress relaxation JOURNAL OF MATERIALS RESEARCH Kim, D., Nix, W. D., Deal, M. D., Plummer, J. D. 2000; 15 (8): 1709-1718
  • Electrical and structural properties of polycrystalline silicon JOURNAL OF APPLIED PHYSICS Tringe, J. W., Plummer, J. D. 2000; 87 (11): 7913-7926
  • Characterization of arsenic dose loss at the Si/SiO2 interface JOURNAL OF APPLIED PHYSICS Kasnavi, R., Sun, Y., Mo, R., Pianetta, P., Griffin, P. B., Plummer, J. D. 2000; 87 (5): 2255-2260
  • Ultra low energy arsenic implant limits on sheet resistance and junction depth 2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS Kasnavi, R., Griffin, P. B., Plummer, J. D. 2000: 112-113
  • Ural, griffin, and plummer reply: Physical review letters Ural, A., Griffin, P. B., Plummer, J. D. 2000; 85 (22): 4836

    View details for PubMedID 11082665

  • Kinetics of boron activation 2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES Mokhberi, A., Griffin, P. B., Plummer, J. D. 2000: 163-166
  • Diffusional hillock formation in Al thin films controlled by creep THIN FILMS-STRESSES AND MECHANICAL PROPERTIES VIII Kim, D. K., Nix, W. D., Arzt, E., Deal, M. D., Plummer, J. D. 2000; 594: 129-134
  • SiGe heterojunctions in epitaxial vertical surrounding-gate MOSFETs 2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS Date, C. K., Plummer, J. D. 2000: 36-37
  • Self-diffusion in silicon: Similarity between the properties of native point defects PHYSICAL REVIEW LETTERS Ural, A., Griffin, P. B., Plummer, J. D. 1999; 83 (17): 3454-3457
  • Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon JOURNAL OF APPLIED PHYSICS Ural, A., Griffin, P. B., Plummer, J. D. 1999; 85 (9): 6440-6446
  • Lattice compression of Si crystals and crystallographic position of As impurities measured with x-ray standing wave spectroscopy JOURNAL OF APPLIED PHYSICS Herrera-Gomez, A., Rousseau, P. M., Woicik, J. C., Kendelewicz, T., Plummer, J., SPICER, W. E. 1999; 85 (3): 1429-1437
  • A simple model for threshold voltage of surrounding-gate MOSFET's IEEE TRANSACTIONS ON ELECTRON DEVICES Auth, C. P., Plummer, J. D. 1998; 45 (11): 2381-2383
  • Arsenic deactivation enhanced diffusion: A time, temperature, and concentration study JOURNAL OF APPLIED PHYSICS Rousseau, P. M., Griffin, P. B., Fang, W. T., Plummer, J. D. 1998; 84 (7): 3593-3601
  • Lateral IGBT in thin SOI for high voltage, high speed power IC IEEE TRANSACTIONS ON ELECTRON DEVICES Leung, Y. K., Paul, A. K., Plummer, J. D., Wong, S. S. 1998; 45 (10): 2251-2254
  • Experimental evidence for a dual vacancy interstitial mechanism of self-diffusion in silicon APPLIED PHYSICS LETTERS Ural, A., Griffin, P. B., Plummer, J. D. 1998; 73 (12): 1706-1708
  • A new structure for controlling dark current due to surface generation in drift detectors NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT Segal, J. D., Patt, B. E., Iwanczyk, J. S., Vilkelis, G., Plummer, J. D., Hedman, B., Hodgson, K. O. 1998; 414 (2-3): 307-316
  • A vertical high voltage termination structure for high-resistivity silicon detectors 1997 IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD, VOLS 1 & 2 Segal, J. D., Kenney, C. J., Aw, C. H., Parker, S. I., Vilkelis, G., Iwanczyk, J. S., Patt, B. E., Plummer, J. 1998: 299-303
  • Effects of PECVD deposition fluxes on the spatial variation of thin film density of as-deposited SiO2 films in interconnect structures PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Lee, K., Deal, M., McVittie, J., Plummer, J., Saraswat, K. 1998: 175-177
  • Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs COMPOUND SEMICONDUCTORS 1997 Massengale, A. R., Tai, C. Y., Deal, M. D., Plummer, J. D., Harris, J. S. 1998; 156: 329-332
  • Characterization of arsenic dose loss at the Si/SiO2 interface using high resolution X-ray Photoelectron Spectrometry INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST Kasnavi, R., Pianetta, P., Sun, Y., Mo, R. N., Griffin, P. B., Plummer, J. D. 1998: 721-724
  • Heating mechanisms of LDMOS and LIGBT in ultrathin SOI IEEE ELECTRON DEVICE LETTERS Leung, Y. K., Paul, A. K., Goodson, K. E., Plummer, J. D., Wong, S. S. 1997; 18 (9): 414-416
  • A test structure advisor and a coupled, library-based test structure layout and testing environment IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Kumar, M. V., Lukaszek, W., Plummer, J. D. 1997; 10 (3): 370-383
  • Nitrogen-doped poly spacer local oxidation IEEE ELECTRON DEVICE LETTERS Huang, S. F., Griffin, P. B., RISSMAN, P., Plummer, J. D. 1997; 18 (7): 346-348
  • Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs ELECTRONICS LETTERS Massengale, A. R., Ueda, T., Harris, J. S., Tai, C. Y., Deal, M. D., Plummer, J. D., Fernandez, R. 1997; 33 (12): 1087-1089
  • Applied bias slewing in transient Wigner function simulation of resonant tunneling diodes IEEE TRANSACTIONS ON ELECTRON DEVICES Biegel, B. A., Plummer, J. D. 1997; 44 (5): 733-737
  • Diffusion modeling of zinc implanted into GaAs JOURNAL OF APPLIED PHYSICS Chase, M. P., Deal, M. D., Plummer, J. D. 1997; 81 (4): 1670-1676
  • Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's IEEE ELECTRON DEVICE LETTERS Auth, C. P., Plummer, J. D. 1997; 18 (2): 74-76
  • Arsenic deactivation enhanced diffusion and the reverse short-channel effect IEEE ELECTRON DEVICE LETTERS Rousseau, P. M., CROWDER, S. W., Griffin, P. B., Plummer, J. D. 1997; 18 (2): 42-44
  • Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI IEEE ELECTRON DEVICE LETTERS Leung, Y. K., Kuehne, S. C., Huang, V. S., Nguyen, C. T., Paul, A. K., Plummer, J. D., Wong, S. S. 1997; 18 (1): 13-15
  • The influence of amorphizing implants on boron diffusion in silicon DEFECTS AND DIFFUSION IN SILICON PROCESSING Chao, H. S., Griffin, P. B., Plummer, J. D. 1997; 469: 347-352
  • Modeling stress effects on thin oxide growth kinetics SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES Huang, S. F., Griffin, P. B., Plummer, J. D., RISSMAN, P. 1997: 49-52
  • Simulation of charge cloud evolution in silicon drift detectors 1996 IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD, VOLS 1-3 Segal, J., Plummer, J., Kenney, C. 1997: 558-562
  • Modeling of Al/Ga interdiffusion in AlAs/GaAs superlattice materials PROCEEDINGS OF THE TWENTY-SIXTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVI) Tai, C. Y., Deal, M. D., Plummer, J. D. 1997; 97 (1): 120-128
  • Diffusion of implanted zinc in GaAs and AlxGa1-xAs modeled with the kick-out mechanism PROCEEDINGS OF THE TWENTY-SIXTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVI) Chase, M. P., Deal, M. D., Plummer, J. D. 1997; 97 (1): 111-119
  • A model for mobility degradation in highly doped arsenic layers IEEE TRANSACTIONS ON ELECTRON DEVICES Rousseau, P. M., Griffin, P. B., Luning, S., Plummer, J. D. 1996; 43 (11): 2025-2027
  • The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 degrees C APPLIED PHYSICS LETTERS Chao, H. S., Griffin, P. B., Plummer, J. D., Rafferty, C. S. 1996; 69 (14): 2113-2115
  • Comparison of self-consistency iteration options for the Wigner function method of quantum device simulation PHYSICAL REVIEW B Biegel, B. A., Plummer, J. D. 1996; 54 (11): 8070-8082
  • Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon APPLIED PHYSICS LETTERS Chao, H. S., Griffin, P. B., Plummer, J. D. 1996; 68 (25): 3570-3572
  • Evolution of the crystallographic position of As impurities in heavily doped Si crystals as their electrical activity changes APPLIED PHYSICS LETTERS HERRERAGOMEZ, A., Rousseau, P. M., Materlik, G., Kendelewicz, T., Woicik, J. C., Griffin, P. B., Plummer, J., SPICER, W. E. 1996; 68 (22): 3090-3092
  • Surface and bulk point defect generation in Czochralski and float zone type silicon wafers APPLIED PHYSICS LETTERS Fang, W. T., Fang, T. T., Griffin, P. B., Plummer, J. D. 1996; 68 (15): 2085-2087
  • Enhanced diffusion by electrical deactivation of arsenic and its implications for bipolar devices IEEE TRANSACTIONS ON ELECTRON DEVICES Rousseau, P. M., Griffin, P. B., Kuehne, S. C., Plummer, J. D. 1996; 43 (4): 547-553
  • Species and dose dependence of ion implantation damage induced transient enhanced diffusion JOURNAL OF APPLIED PHYSICS Chao, H. S., CROWDER, S. W., Griffin, P. B., Plummer, J. D. 1996; 79 (5): 2352-2363
  • Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2 APPLIED PHYSICS LETTERS Fang, T. T., Fang, W. T., Griffin, P. B., Plummer, J. D. 1996; 68 (6): 791-793
  • High voltage LDMOS transistors in sub-micron SOI films ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS Paul, A. K., Leung, Y. K., Plummer, J. D., Wong, S. S., Kuehne, S. C., Huang, V. S., Nguyen, C. T. 1996: 89-92
  • Physical modeling of transient enhanced diffusion in silicon PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY Griffin, P. B., Plummer, J. D. 1996; 96 (4): 101-115
  • High voltage, high speed lateral IGBT in thin SOI for power IC 1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS Leung, Y. K., Kuehne, S. C., Huang, V. S., Nguyen, C. T., Paul, A. K., Plummer, J. D., Wong, S. S. 1996: 132-133
  • Nitridation enhanced diffusion of antimony in bulk and silicon-on-insulator material PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY CROWDER, S. W., Griffin, P. B., Plummer, J. D. 1996; 96 (4): 54-63
  • Vertical, fully-depleted, surrounding gate MOSFETs on sub-0.1 mu m thick silicon pillars 1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST Auth, C. P., Plummer, J. D. 1996: 108-109
  • VACANCY GENERATION RESULTING FROM ELECTRICAL DEACTIVATION OF ARSENIC APPLIED PHYSICS LETTERS LAWTHER, D. W., Myler, U., Simpson, P. J., Rousseau, P. M., Griffin, P. B., Plummer, J. D. 1995; 67 (24): 3575-3577
  • PERFORMANCE OF THE 3-D PENCIL FLASH EPROM CELL AND MEMORY ARRAY IEEE TRANSACTIONS ON ELECTRON DEVICES PEIN, H., Plummer, J. D. 1995; 42 (11): 1982-1991
  • MODELING THE DIFFUSION OF IMPLANTED BE IN GAAS JOURNAL OF APPLIED PHYSICS Hu, J. C., Deal, M. D., Plummer, J. D. 1995; 78 (3): 1606-1613
  • MODELING THE DIFFUSION OF GROWN-IN BE IN MOLECULAR-BEAM EPITAXY GAAS JOURNAL OF APPLIED PHYSICS Hu, J. C., Deal, M. D., Plummer, J. D. 1995; 78 (3): 1595-1605
  • STUDY ON HYDROGENATION OF POLYSILICON THIN-FILM TRANSISTORS BY ION-IMPLANTATION IEEE TRANSACTIONS ON ELECTRON DEVICES Cao, M., Zhao, T. M., Saraswat, K. C., Plummer, J. D. 1995; 42 (6): 1134-1140
  • Optimization of quarter micron MOSFETs for low voltage low power applications INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST Chen, Z. J., Burr, J., Shott, J., Plummer, J. D. 1995: 63-66
  • Computational Prototyping for 21st Century Structures Invited Talk, Sematech, Austin TX Plummer, J., D. 1995
  • ''The effect of source/drain processing on the reverse short channel effect of deep sub-micron bulk and SOI NMOSFETs'' INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST CROWDER, S. W., Rousseau, P. M., Snyder, J. P., Scott, J. A., Griffin, P. B., Plummer, J. D. 1995: 427-430
  • Modeling the Diffusion of Grown-in Be in MBE GaAs J. Appl. Physics Hu, J., C., Deal, M., D., Plummer, J., D. 1995; 78 (3): 1595-1605
  • Implant enhanced diffusion of boron in silicon germanium STRAINED LAYER EPITAXY-MATERIALS, PROCESSING, AND DEVICE APPLICATIONS Fang, W. T., Griffin, P. B., Plummer, J. D. 1995; 379: 379-384
  • DISPERSION OF MOS CAPACITANCE-VOLTAGE CHARACTERISTICS RESULTING FROM THE RANDOM CHANNEL DOPANT ION DISTRIBUTION IEEE TRANSACTIONS ON ELECTRON DEVICES WATT, J. T., Plummer, J. D. 1994; 41 (11): 2222-2232
  • A VERTICAL SUBMICRON POLYSILICON THIN-FILM-TRANSISTOR USING A LOW-TEMPERATURE PROCESS IEEE ELECTRON DEVICE LETTERS Zhao, T. M., Cao, M., Saraswat, K. C., Plummer, J. D. 1994; 15 (10): 415-417
  • CHARACTERIZATION OF INTERFACE TOPOGRAPHY OF THE BURIED SI-SIO2 INTERFACE IN SILICON-ON-INSULATOR MATERIAL BY ATOMIC-FORCE MICROSCOPY APPLIED PHYSICS LETTERS CROWDER, S. W., Griffin, P. B., Plummer, J. D. 1994; 65 (13): 1698-1699
  • EFFECT OF BURIED SI-SIO2 INTERFACES ON OXIDATION AND IMPLANT-ENHANCED DOPANT DIFFUSION IN THIN SILICON-ON-INSULATOR FILMS JOURNAL OF APPLIED PHYSICS CROWDER, S. W., Hsieh, C. J., Griffin, P. B., Plummer, J. D. 1994; 76 (5): 2756-2764
  • A SIMPLE EEPROM CELL USING TWIN POLYSILICON THIN-FILM TRANSISTORS IEEE ELECTRON DEVICE LETTERS Cao, M., Zhao, T. M., Saraswat, K. C., Plummer, J. D. 1994; 15 (8): 304-306
  • ELECTRICAL DEACTIVATION OF ARSENIC AS A SOURCE OF POINT-DEFECTS APPLIED PHYSICS LETTERS Rousseau, P. M., Griffin, P. B., Plummer, J. D. 1994; 65 (5): 578-580
  • OXIDATION ENHANCED DOPANT DIFFUSION IN SEPARATION BY IMPLANTATION BY OXYGEN SILICON-ON-INSULATOR MATERIAL APPLIED PHYSICS LETTERS CROWDER, S. W., Griffin, P. B., Hsieh, C. J., Wei, G. Y., Plummer, J. D., Allen, L. P. 1994; 64 (24): 3264-3266
  • PIN DETECTOR ARRAYS AND INTEGRATED READOUT CIRCUITRY ON HIGH-RESISTIVITY FLOAT-ZONE SILICON IEEE TRANSACTIONS ON ELECTRON DEVICES Snoeys, W., Plummer, J. D., Parker, S., Kenney, C. 1994; 41 (6): 903-912
  • PARASITIC BIPOLAR GAIN IN FULLY DEPLETED N-CHANNEL SOI MOSFETS IEEE TRANSACTIONS ON ELECTRON DEVICES VERPLOEG, E. P., Nguyen, C. T., Wong, S. S., Plummer, J. D. 1994; 41 (6): 970-977
  • MEASUREMENT OF SUBSTRATE CURRENT IN SOI MOSFETS IEEE ELECTRON DEVICE LETTERS Nguyen, C. T., VERPLOEG, E. P., Kuehne, S. C., Plummer, J. D., Wong, S. S., Renteln, P. 1994; 15 (4): 132-134
  • OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN HEAVILY-DOPED LAYERS IN SILICON JOURNAL OF THE ELECTROCHEMICAL SOCIETY Roth, D. J., Plummer, J. D. 1994; 141 (4): 1074-1081
  • DOPING AND DAMAGE DOSE DEPENDENCE OF IMPLANT INDUCED TRANSIENT ENHANCED DIFFUSION BELOW THE AMORPHIZATION THRESHOLD APPLIED PHYSICS LETTERS Griffin, P. B., Lever, R. F., Packan, P. A., Plummer, J. D. 1994; 64 (10): 1242-1244
  • INVESTIGATION OF BODY EFFECT OF FULLY DEPLETED N-CHANNEL SOI DEVICE AS A FUNCTION OF BODY BIAS 1994 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS Chen, Z. J., PLOEG, E. V., Shott, J., Plummer, J. D. 1994: 57-58
  • The Effect of Buried Si-SiO2 Interfaces on Oxidation and Implant Enhanced Dopant Diffusion in Thin Silicon-on-Insulator Films J. Appl. Phys Crowder, S., W., Hsieh, C., J., Griffin, P., B., Plummer, J., D. 1994; 76: 2756
  • High Mobility Si1-xGex PMOS Transistors to 5K 1st European Workshop on Low Temperature Electronics, WOLTE 1, Grenoble France, June 1994. Also published Journal de Physique IV, Colloque C6, supplement to Journal de Physique III Scott, J., Croke, E., T., Plummer, J., D. 1994; 4
  • Oxidation Enhanced Diffusion in Separation by Implantation of Oxygen Silicon-on-Insulator Material Appl. Phys. Letters Crowder, S., W., Griffin, P., B., Hsieh, C., J., Wei, G., Y., Plummer, J., D., Allen, L., P. 1994; 64 (24): 3264-3266
  • Doping and Damage Dependence of Implant Induced Transient Enhanced Diffusion Below the Amorphization Threshold Appl. Phys. Lett. Griffin, P., B., Lever, R., F., Packan, P., A., Plummer, J., D. 1994; 64: 1242-1244
  • A TRENCH-GATE LIGBT STRUCTURE AND 2 LMCT STRUCTURES IN SOI SUBSTRATES ISPSD '94 - PROCEEDINGS OF THE 6TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS DISNEY, D. R., PEIN, H. B., Plummer, J. D. 1994: 405-410
  • DEVICE IMPLICATIONS OF ENHANCED DIFFUSION CAUSED BY THE ELECTRICAL DEACTIVATION OF ARSENIC INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST Rousseau, P. M., Griffin, P. B., Kuehne, S. C., Plummer, J. D. 1994: 861-864
  • A NEW MOSFET OUTPUT CONDUCTANCE MEASUREMENT TECHNIQUE IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT Akram, M. F., Plummer, J. D., SHOTT, J. D. 1993; 42 (5): 893-898
  • A 3-D SIDEWALL FLASH EPROM CELL AND MEMORY ARRAY IEEE ELECTRON DEVICE LETTERS PEIN, H., Plummer, J. D. 1993; 14 (8): 415-417
  • SILICON INTERSTITIAL ABSORPTION DURING THERMAL-OXIDATION AT 900 DEGREES-C BY EXTENDED DEFECTS FORMED VIA SILICON IMPLANTATION APPLIED PHYSICS LETTERS Roth, D. J., Huang, R. Y., Plummer, J. D., DUTTON, R. W. 1993; 62 (20): 2498-2500
  • DESIGN AND ANALYSIS OF A NEW CONDUCTIVITY-MODULATED POWER MOSFET IEEE TRANSACTIONS ON ELECTRON DEVICES Liu, D. K., Plummer, J. D. 1993; 40 (2): 428-438
  • USE OF LOW-TEMPERATURE SI MBE GROWTH TECHNIQUES FOR HIGH-PERFORMANCE SIGE/SI ELECTRONICS SEMICONDUCTOR HETEROSTRUCTURES FOR PHOTONIC AND ELECTRONIC APPLICATIONS Croke, E. T., HARRELL, M. J., MIERZWINSKI, M. E., Plummer, J. D. 1993; 281: 415-420
  • LATERAL DEPLETION-MODE THYRISTORS IN SOI SUBSTRATES ISPSD 93 : PROCEEDINGS OF THE 5TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC(S) DISNEY, D. R., Plummer, J. D. 1993: 269-273
  • SOI LIGBT DEVICES WITH A DUAL P-WELL IMPLANT FOR IMPROVED LATCHING CHARACTERISTICS ISPSD 93 : PROCEEDINGS OF THE 5TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC(S) DISNEY, D. R., Plummer, J. D. 1993: 254-258
  • A Virtual Factory-Based Environment for Semiconductor Device Development Invited Paper, SEMICON/Europa'93, Geneva Switzerland Wong, W., Pan, J., Plummer, J. 1993
  • BREAKDOWN VOLTAGE OF SUBMICRON MOSFETS IN FULLY DEPLETED SOI MICROELECTRONICS MANUFACTURING AND RELIABILITY KISTLER, N., PLOEG, E., Woo, J., Plummer, J. 1993; 1802: 202-212
  • PROGRAMMABLE FACTORY FOR ADAPTABLE IC MANUFACTURING 1993 SYMPOSIUM ON VLSI TECHNOLOGY Saraswat, K. C., Wood, S. C., Plummer, J. D., Losleben, P. 1993: 131-132
  • DEVELOPMENT OF ANIMATED SIMULATION OF SEMICONDUCTOR ELECTRONIC DEVICES FOR CLASSROOM DEMONSTRATION INTERNATIONAL CONFERENCE ON SIMULATION IN ENGINEERING EDUCATION (ICSEE 94) CHANGHASNAIN, C. J., Plummer, J. D., DUTTON, R. W., Yu, Z. P. 1993; 26 (1): 67-72
  • GEXSI1-X/SILICON INVERSION-BASE TRANSISTORS - EXPERIMENTAL DEMONSTRATION IEEE TRANSACTIONS ON ELECTRON DEVICES Taft, R. C., Plummer, J. D., Iyer, S. S. 1992; 39 (9): 2119-2126
  • GEXSI1-X/SILICON INVERSION-BASE TRANSISTORS - THEORY OF OPERATION IEEE TRANSACTIONS ON ELECTRON DEVICES Taft, R. C., Plummer, J. D. 1992; 39 (9): 2108-2118
  • THE FIELD-ASSISTED TURN-OFF THYRISTOR - A REGENERATIVE DEVICE WITH VOLTAGE-CONTROLLED TURN-OFF IEEE TRANSACTIONS ON ELECTRON DEVICES Petti, C. J., Plummer, J. D. 1992; 39 (8): 1946-1953
  • RETARDED DIFFUSION OF SB IN A HIGH-CONCENTRATION AS BACKGROUND DURING SILICON OXIDATION APPLIED PHYSICS LETTERS PEROZZIELLO, E. A., Griffin, P. B., Plummer, J. D. 1992; 61 (3): 303-305
  • SUB-QUARTER-MICROMETER CMOS ON ULTRATHIN (400 ANGSTROM) SOI IEEE ELECTRON DEVICE LETTERS KISTLER, N., VERPLOEG, E., Woo, J., Plummer, J. 1992; 13 (5): 235-237
  • MODELING UPHILL DIFFUSION OF MG IMPLANTS IN GAAS USING SUPREM-IV JOURNAL OF APPLIED PHYSICS Robinson, H. G., Deal, M. D., Amaratunga, G., Griffin, P. B., Stevenson, D. A., Plummer, J. D. 1992; 71 (6): 2615-2623
  • OXYHEMOGLOBIN SATURATION FOLLOWING ELECTIVE ABDOMINAL-SURGERY IN PATIENTS RECEIVING CONTINUOUS INTRAVENOUS-INFUSION OR INTRAMUSCULAR MORPHINE ANALGESIA ANAESTHESIA Kluger, M. T., Owen, H., Watson, D., Ilsley, A. H., Baldwin, A. M., FRONSKO, R. R., Plummer, J. L., Brose, W. G. 1992; 47 (3): 256-260

    Abstract

    Oxygen saturation was continuously measured using computerised pulse oximetry for 8 h overnight pre-operatively and for the first 24 h postoperatively in 40 patients receiving intermittent intramuscular morphine or continuous infusion of morphine following elective upper abdominal surgery. The proportion of time with an oxygen saturation less than 94% was used as an index of desaturation. Patients receiving continuous infusion analgesia received a larger morphine dose and achieved better analgesia than the intramuscular group. Postoperatively, the duration of desaturation increased 10-fold over pre-operative values, 'intramuscular' patients spending 39.0% (SD, 37.0%) and 'continuous infusion' patients 40.0% (SD, 37.5%) of the time below 94% saturation. Although newer therapies (e.g. epidural analgesia and patient-controlled analgesia) are currently receiving greater attention, the sequelae of these more traditional analgesic techniques warrant further study.

    View details for Web of Science ID A1992HH73600017

    View details for PubMedID 1566997

  • 1ST RESULTS FROM AN INTEGRATED PIXEL DETECTOR PROCEEDINGS OF THE JOINT INTERNATIONAL LEPTON-PHOTON SYMPOSIUM & EUROPHYSICS CONFERENCE ON HIGH ENERGY PHYSICS, VOLS 1 AND 2 Parker, S., Kenney, C., Snoeys, W., Plummer, J. 1992: A232-A235
  • Sub-Quarter Micron CMOS on Ultra-Thin (400Å) SOI IEEE Elec. Dev. Letters Kistler, N., VerPloeg, E., Woo, J., Plummer, J. 1992; 13 (5): 235-237
  • TOOL INTEGRATION FOR POWER DEVICE MODELING INCLUDING 3D ASPECTS POWER SEMICONDUCTOR DEVICES AND CIRCUITS DUTTON, R. W., Plummer, J. D. 1992: 111-138
  • THE SUPERLATTICE DIFFUSION PROBE - A TOOL FOR MODELING DIFFUSION IN III-V SEMICONDUCTORS ADVANCED III-V COMPOUND SEMICONDUCTOR GROWTH, PROCESSING AND DEVICES Allen, E. L., Pass, C. J., Deal, M. D., Plummer, J. D., CHIA, V. F. 1992; 240: 709-714
  • SUPPRESSION OF AL-GA INTERDIFFUSION BY A WNX FILM ON AN ALXGA1-XAS/ALAS SUPERLATTICE STRUCTURE APPLIED PHYSICS LETTERS Allen, E. L., Pass, C. J., Deal, M. D., Plummer, J. D., CHIA, V. F. 1991; 59 (25): 3252-3254
  • DEVICE PHYSICS AND TECHNOLOGY OF COMPLEMENTARY SILICON MESFETS FOR VLSI APPLICATIONS IEEE TRANSACTIONS ON ELECTRON DEVICES MACWILLIAMS, K. P., Plummer, J. D. 1991; 38 (12): 2619-2631
  • EXTENDED DEFECTS OF ION-IMPLANTED GAAS JOURNAL OF APPLIED PHYSICS Jones, K. S., Allen, E. L., Robinson, H. G., Stevenson, D. A., Deal, M. D., Plummer, J. D. 1991; 70 (11): 6790-6795
  • MERGED BICMOS LOGIC TO EXTEND THE CMOS BICMOS PERFORMANCE CROSSOVER BELOW 2.5-V SUPPLY IEEE JOURNAL OF SOLID-STATE CIRCUITS RITTS, R. B., RAJE, P. A., Plummer, J. D., Saraswat, K. C., CHAM, K. M. 1991; 26 (11): 1606-1614
  • A COMPARISON OF THE DIFFUSION BEHAVIOR OF ION-IMPLANTED SN, GE, AND SI IN GALLIUM-ARSENIDE JOURNAL OF THE ELECTROCHEMICAL SOCIETY Allen, E. L., Murray, J. J., Deal, M. D., Plummer, J. D., Jones, K. S., RUBART, W. S. 1991; 138 (11): 3440-3449
  • AN 8-TERMINAL KELVIN-TAPPED BIPOLAR-TRANSISTOR FOR EXTRACTING PARASITIC SERIES RESISTANCES IEEE TRANSACTIONS ON ELECTRON DEVICES Taft, R. C., Plummer, J. D. 1991; 38 (9): 2139-2154
  • 3-AMINO-2,3-DIDEOXY-D-ERYTHRO-FURANOSE DERIVATIVES TETRAHEDRON Cheng, M. C., Kim, K., Lin, Y. T., Plummer, J. S., Talhouk, J., Wang, Y., You, T. P., Mosher, H. S. 1991; 47 (27): 4861-4868
  • MODELING ACTIVATION OF IMPLANTED SI IN GAAS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Vanasupa, L. S., Deal, M. D., Plummer, J. D. 1991; 138 (7): 2134-2140
  • ON H-PASSIVATION OF SI DONORS IN GAAS ANNEALED WITH PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE CAPS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Vanasupa, L. S., Deal, M. D., Plummer, J. D. 1991; 138 (3): 870-871
  • MBICMOS - COMPLEX LOGIC AND MODIFIED GATES FOR IMPROVED PERFORMANCE PROCEEDINGS OF THE 1991 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING RITTS, R. B., Plummer, J. D. 1991: 210-213
  • A NEW INTEGRATED PIXEL DETECTOR FOR HIGH-ENERGY PHYSICS CONFERENCE RECORD OF THE 1991 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE, VOLS 1-3 Snoeys, W., Plummer, J., Parker, S., Kenney, C. 1991: 457-460
  • TEMPERATURE AND TIME-DEPENDENCE OF B-DIFFUSION AND P-DIFFUSION IN SI DURING SURFACE OXIDATION JOURNAL OF APPLIED PHYSICS Packan, P. A., Plummer, J. D. 1990; 68 (8): 4327-4329
  • THE COMPLEMENTARY INSULATED-GATE BIPOLAR-TRANSISTOR (CIGBT) - A NEW POWER SWITCHING DEVICE IEEE ELECTRON DEVICE LETTERS Boisvert, D. M., Plummer, J. D. 1990; 11 (9): 368-370
  • TRANSIENT DIFFUSION OF LOW-CONCENTRATION-B IN SI DUE TO SI-29 IMPLANTATION DAMAGE APPLIED PHYSICS LETTERS Packan, P. A., Plummer, J. D. 1990; 56 (18): 1787-1789
  • THE EFFECT OF BACKGROUND DOPING AND DOSE ON DIFFUSION OF ION-IMPLANTED TIN IN GALLIUM-ARSENIDE JOURNAL OF APPLIED PHYSICS Allen, E. L., Deal, M. D., Plummer, J. D. 1990; 67 (7): 3311-3314
  • REDUCTION OF LATERAL PHOSPHORUS DIFFUSION IN CMOS NORMAL-WELLS IEEE TRANSACTIONS ON ELECTRON DEVICES Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A. 1990; 37 (3): 806-807
  • DIFFUSION OF ION-IMPLANTED TIN IN GALLIUM-ARSENIDE IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES Allen, E. L., Deal, M. D., Plummer, J. D. 1990; 163: 685-689
  • Radiation Tolerant Complementary Silicon MESFETs for VLSI Applications IEEE Nuclear and Space Radiation Effects Conference, Reno Nevada. Also IEEE Transactions on Nuclear Science MacWilliams, K., P., Scott, D., M., Plummer, J., D. 1990
  • THE EFFECT OF INTERCONNECTION RESISTANCE ON THE PERFORMANCE ENHANCEMENT OF LIQUID-NITROGEN-COOLED CMOS CIRCUITS IEEE TRANSACTIONS ON ELECTRON DEVICES WATT, J. T., Plummer, J. D. 1989; 36 (8): 1510-1520
  • EFFECTS OF STRESS ON THE ELECTRICAL ACTIVATION OF IMPLANTED SI IN GAAS APPLIED PHYSICS LETTERS Vanasupa, L. S., Deal, M. D., Plummer, J. D. 1989; 55 (3): 274-276
  • VACANCY SUPERSATURATION IN SI UNDER SIO2 CAUSED BY SIO FORMATION DURING ANNEALING IN AR JOURNAL OF APPLIED PHYSICS Ahn, S. T., Kennel, H. W., Tiller, W. A., Plummer, J. D. 1989; 65 (8): 2957-2963
  • POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON REVIEWS OF MODERN PHYSICS FAHEY, P. M., Griffin, P. B., Plummer, J. D. 1989; 61 (2): 289-384
  • ADVANCED HETEROJUNCTION GEXSI1-X/SI BIPOLAR-DEVICES 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST Taft, R. C., Plummer, J. D., Iyer, S. S. 1989: 655-658
  • CHARACTERIZATION OF SURFACE MOBILITY IN MOS STRUCTURES CONTAINING INTERFACIAL CESIUM IONS IEEE TRANSACTIONS ON ELECTRON DEVICES WATT, J. T., FISHBEIN, B. J., Plummer, J. D. 1989; 36 (1): 96-100
  • DEMONSTRATION OF A P-CHANNEL BICFET IN THE GEXSI1-X/SI SYSTEM IEEE ELECTRON DEVICE LETTERS Taft, R. C., Plummer, J. D., Iyer, S. S. 1989; 10 (1): 14-16
  • A CLOSED-FORM ANALYSIS OF FT FOR THE BIPOLAR-TRANSISTOR DOWN TO LIQUID-NITROGEN TEMPERATURE 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST Tamba, N., WEYBRIGHT, M. E., SHOTT, J. D., Plummer, J. D. 1989: 807-810
  • FILM STRESS-RELATED VACANCY SUPERSATURATION IN SILICON UNDER LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE FILMS JOURNAL OF APPLIED PHYSICS Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A. 1988; 64 (10): 4914-4919
  • ENHANCED SB DIFFUSION IN SI UNDER THERMAL SI3N4 FILMS DURING ANNEALING IN AR APPLIED PHYSICS LETTERS Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A. 1988; 53 (17): 1593-1595
  • CIRCUIT APPROACHES TO INCREASING IGBT SWITCHING SPEED IEEE JOURNAL OF SOLID-STATE CIRCUITS Boisvert, D. M., Liu, D. K., Plummer, J. D. 1988; 23 (5): 1276-1279
  • OPTIMIZATION OF SILICON BIPOLAR-TRANSISTORS FOR HIGH-CURRENT GAIN AT LOW-TEMPERATURES IEEE TRANSACTIONS ON ELECTRON DEVICES Woo, J. C., Plummer, J. D. 1988; 35 (8): 1311-1321
  • EFFECT OF OXYGEN PRECIPITATION ON PHOSPHORUS DIFFUSION IN CZOCHRALSKI SILICON APPLIED PHYSICS LETTERS Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A., Rek, Z. U., Stock, S. R. 1988; 53 (1): 34-36
  • A NOVEL TRENCH-INJECTOR POWER DEVICE WITH LOW ON RESISTANCE AND HIGH SWITCHING SPEED IEEE ELECTRON DEVICE LETTERS Liu, D. K., Plummer, J. D. 1988; 9 (7): 321-323
  • CHEMISTRY OF SI-SIO2 INTERFACE TRAP ANNEALING JOURNAL OF APPLIED PHYSICS Reed, M. L., Plummer, J. D. 1988; 63 (12): 5776-5793
  • Film Stress-related Vacancy Supersaturation in Silicon under Low-Pressure CVD Si3N4 Films Journal of Applied Physics Ahn, S., T., Kennel, H., W., Plummer, J., D., Tiller, W., A. 1988; 64: 4914
  • Enhanced Sb Diffusion under Thermal Si3N4 Films During Annealing in Ar Applied Physics Letters Ahn, S., T., Kennel, H., W., Plummer, J., D., Tiller, W., A. 1988; 17 (53): 1593
  • Range Distribution of Implanted Cesium Ions in Silicon Dioxide Films Journal Applied Physics Fishbein, B., J., Plummer, J., D. 1988; 12 (63): 5887-5889
  • Efficient Numerical Simulation of the High Frequency MOS Capacitance IEEE Transactions on Electron Devices Watt, J., T., Plummer, J., D. 1987; ED-34 (10): 2214-2215
  • Time Resolved Annealing of Interface Traps in Polysilicon Gate Metal-Oxide-Silicon Capacitors Journal Electrochemical Society Fishbein, B., J., Watt, J., T., Plummer, J., D. 1987; 134 (3): 674-681
  • Quantitative Modeling of Si/SiO2 Interface Fixed Charge: II. Physical Modeling Journal Electrochemical Society Akinwande, A., I., Plummer, J., D. 1987; 134 (10): 2573-2580
  • A Model for Bulk Effects on Si Interstitial Diffusivity in Silicon Applied Physics Letters Griffin, P., B., Ahn, S., T., Tiller, W., D., Plummer, J., D. 1987; 2 (51): 115-117
  • Thermionic Emission Probability for Semiconductor-Insulator Interfaces IEEE Transactions on Electron Devices Henning, A., K., Plummer, J., D. 1987; ED-34 (10): 2211-2212
  • Process Dependence of the Metal Semiconductor Work Function Difference Journal Electrochemical Society Akinwande, A., I., Plummer, J., D. 1987; 134 (9): 2297-2303
  • Non-Ideal Base Current in Bipolar Transistors at Low Temperature IEEE Transactions on Electron Devices Woo, J., C.S., Plummer, J., D., Stork, J., M. C. 1987; ED-34 (1): 130-138
  • Characterization and Cesium Diffusion in Silicon Dioxide Films Using Backscattering Spectrometry Applied Physics Letters Fishbein, B., J., Plummer, J., D. 1987; 17 (50): 1200-1202
  • Analytical Relationship for the Oxidation of Silicon in Dry Oxygen in the Thin Regime Journal Applied Physics Massoud, H., Z., Plummer, J., D. 1987; 8 (62): 3416-3423
  • A Low Temperature NMOS Technology with Cesium Implanted Load Devices IEEE Transactions on Electron Devices Watt, J., T., Fishbein, B., J., Plummer, J., D. 1987; ED-34 (1): 28-38
  • A Study of Silicon Interstitial Kinetics Using Silicon Membranes - Applications to 2-D Dopant Diffusion Journal Applied Physics Ahn, S., T., Griffin, P., B., Shott, J., D., Plummer, J., D., Tiller, W., A. 1987; 12 (62): 4745-4755
  • Substrate Current at Cryogenic Temperatures: Measurements and a 2-D Model for CMOS Technology IEEE Transactions on Electron Devices Henning, A., K., Chan, N., N., Watt, J., T., Plummer, J., D. 1987; ED-34 (2): 64-74
  • Si/SiO2 Interface Trap Production by Low Temperature Thermal Processing Applied Physics Letters Reed, M., L., Plummer, J., D. 1987; 7 (51): 514-516
  • Quantitative Modeling of Si/SiO2 Interface Fixed Charge: I. Experimental Results Journal Electrochemical Society Akinwande, A., I., Plummer, J., D. 1987; 134 (10): 2565-2573
  • Gettering of Gold in Silicon - A Tool for Understanding the Properties of Silicon Interstitials Journal Applied Physics Bronner, G., B., Plummer, J., D. 1987; 12 (61): 5286-5298
  • Two Reaction Model of Interface Trap Annealing IEEE Trans. Nuc. Science Reed, M., L., Plummer, J., D. 1986; NS-33 (6): 1198-1202
  • Thermal Instability of Schottky Diode Barrier Heights Modified by Inert Ion Sputter-Etching Damage IEEE Electron Device Letters MacWilliams, K., P., Plummer, J., D. 1986; EDL-7 (4): 247-249
  • Point Defect Generation During Oxidation of Silicon in Dry Oxygen. I. Theory Journal Applied Physics Dunham, S., T., Plummer, J., D. 1986; 7 (59): 2541-2550
  • Short Channel Effects in MOSFETs at Liquid Nitrogen Temperature IEEE Transactions on Electron Devices Woo, J., C.S., Plummer, J., D. 1986; ED-33 (7): 1012-1019
  • Physics, Technology and Modeling of Polysilicon Emitter Contacts for VLSI Bipolar Transistors IEEE Transactions on Electron Devices Patton, G., L., Bravman, J., C., Plummer, J., D. 1986; ED-33 (11): 1754-1768
  • A Modified Lightly Doped Drain Structure for VLSI MOSFETs IEEE Transactions on Electron Devices Bampi, S., Plummer, J., D. 1986; ED-33 (11): 1769-1779
  • A DI/JI Compatible Monolithic High-Voltage Multiplexer IEEE Transactions on Electron Devices Williams, R., K., Sevilla, L., T., Ruetz, E., Plummer, J., D. 1986; ED-33 (12): 1977-1984
  • Point Defect Generation During Oxidation of Silicon in Dry Oxygen. II. Comparison to Experiment Journal Applied Physics Dunham, S., T., Plummer, J., D. 1986; 7 (59): 2551-2561
  • Morphological Studies of Polysilicon Emitter Contacts Proceedings Materials Research Society Bravman, J., C., Patton, G., L., Sinclair, R., Plummer, J., D. 1985; 37: 461-466
  • Thermal Oxidation of Silicon in Dry Oxygen: Growth Rate Enhancement in the Thin Regime. II. Physical Mechanisms Journal Electrochemical Society Massoud, H., Z., Plummer, J., D., Irene, E., A. 1985; 132 (11): 2694-2700
  • Thermal Oxidation of Silicon in Dry Oxygen: Accurate Determination of the Kinetic Rate Constants Journal Electrochemical Society Massoud, H., Z., Plummer, J., D., Irene, E., A. 1985; 132 (7): 1745-1752
  • MEASUREMENT OF SILICON INTERSTITIAL DIFFUSIVITY APPLIED PHYSICS LETTERS Griffin, P. B., FAHEY, P. M., Plummer, J. D., DUTTON, R. W. 1985; 47 (3): 319-321
  • Thermal Oxidation of Silicon in Dry Oxygen: Growth Rate Enhancement in the Thin Regime. I. Experimental Results Journal Electrochemical Society Massoud, H., Z., Plummer, J., D., Irene, E., A. 1985; 132 (11): 2685-2693
  • Silicon Interstitial Generation by Argon Implantation Applied Physics Letters Bronner, G., B., Plummer, J., D. 1985; 46 (5): 510-512
  • Measurement and Reduction of Interface States at the Recrystallized Silicon-Underlying Insulator Interface Applied Physics Letters Sturm, J., C., Plummer, J., D., Gibbons, J., F. 1985; 12 (46): 1171-1172
  • STRUCTURE AND MORPHOLOGY OF POLYCRYSTALLINE SILICON-SINGLE CRYSTAL SILICON INTERFACES JOURNAL OF APPLIED PHYSICS Bravman, J. C., PATTON, G. L., Plummer, J. D. 1985; 57 (8): 2779-2782
  • Rapid Thermal Annealing of Interface States in Aluminum Gate MOS Capacitors Applied Physics Letters Reed, M., L., Fishbein, B., Plummer, J., D. 1985; 46 (4): 400-402
  • Power MOS Devices in Discrete and Integrated Circuits in Power Integrated Circuits, McGraw Hill Plummer, J., D., Blanchard, R., D. 1985
  • Process and Device Modeling for VLSI Structures Semiconductor Processing, ASTM, STP 850 Plummer, J., D. 1984
  • Electrical Performance and Physics of Isolation Region Structures for VLSI IEEE Transactions on Electron Devices Goodwin, S., H., Plummer, J., D. 1984; ED-31: 861-872
  • Characterization of Transient Process Phenomena Using a Temperature Tolerant Metallurgy IEEE Electron Device Letters Bronner, G., Plummer, J., D. 1984; EDL-5 (3): 75-77
  • Experimental Determination of the Temperature Dependence of Argon Annealed Fixed Oxide Charge at the Si/SiO2 Interface Applied Physics Letters Akinwande, A., I., Ho, C., P., Plummer, J., D. 1984; 45 (3): 263-265
  • VLSI Process Modeling - SUPREM III IEEE Transactions on Electron Devices Ho, C., P., Plummer, J., D., Hansen, S., E., Dutton, R., W. 1983; Ed-30: 1438-1453
  • Small Geometry Depleted Base Bipolar Transistors (BSIT) - VLSI Devices? IEEE Transactions on Electron Devices Stork, J., M. C., Plummer, J., D. 1981; ED-28 (11): 1354-1364
  • Insulated Gate Planar Thyristors, Part I: Structure and Basic Operation IEEE Transactions on Electron Devices Plummer, J., D., Scharf, B., W. 1980; ED-27 (2): 380-387
  • Modeling of the On Resistance of LDMOS, VDMOS, and VMOS Power MOS Transistors IEEE Transactions on Electron Devices Sun, S., C., Plummer, J., D. 1980; ED-27 (2): 356-367
  • Monolithic Silicon - PVF2 Piezoelectric Arrays for Ultrasonic Imaging 8th International Symposium on Acoustical Imaging, May 30-June 2, 1978, Key Biscayne Florida, Acoustical Imaging Swartz, R., G., Plummer, J., D. 1980; 8: 69-95
  • Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces IEEE Transactions on Electron Devices Sun, S., C., Plummer, J., D. 1980; ED-27 (8): 1497-1508
  • On the Generation of High Frequency Acoustic Energy with Polyvinylidene Fluoride IEEE Transactions Sonics and Ultrasonics Swartz, R., G., Plummer, J., D. 1980; SU-27 (6): 295-303
  • Insulated Gate Planar Thyristors, Part 2: Quantitative Modeling IEEE Transactions on Electron Devices Scharf, B., W., Plummer, J., D. 1980; ED-27 (2): 387-394
  • Integrated Silicon-PVF2 Acoustic Transducer Arrays IEEE Transactions on Electron Devices Swartz, R., G., Plummer, J., D. 1979; ED-26 (12): 1921-1931
  • An Improved Wedge-Type Backing for Piezoelectric Transducers IEEE Transactions Sonics and Ultrasonics Swartz, R., G., Plummer, J., D., Meindl, J., D. 1979; SU-26 (2): 140-142
  • Improved MOS Device Performance Through the Enhanced Oxidation of Heavily Doped N++ Silicon Special Issue on VLSI, IEEE Transactions on Electron Devices Ho, C., P., Plummer, J., D. 1979; ED-26 (4): 623-630
  • Si/SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels. I. Theory Journal Electrochemical Society Ho, C., P., Plummer, J., D. 1979; 126 (9): 1516-1522
  • Si/SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels. II. Comparison with Experiment and Discussion Journal Electrochemical Society Ho, C., P., Plummer, J., D. 1979; 126 (9): 1523-1530
  • Trade-Off Between Threshold Voltage and Breakdown in High Voltage Double Diffused MOS Transistors IEEE Transactions on Electron Devices Pocha, M., D., Plummer, J., D., Meindl, J., D. 1978; Ed-25 (11): 1325-1327
  • Kinetics of the Thermal Oxidation of Silicon in O2/H2O and O2/Cl2 Mixtures Journal Electrochemical Society Deal, B., E., Hess, D., W., Plummer, J., D., Ho, C., P. 1978; 125 (2): 339-346
  • Observation of Phosphorus Pile-Up at the SiO2-Si Interface Journal Applied Physics Johannessen, J., S., Spicer, W., E., Gibbons, J., F., Plummer, J., D., Taylor, N., J. 1978; 8 (49)
  • Thermal Oxidation of Heavily Phosphorus Doped Silicon Journal Electrochemical Society Ho, C., P., Plummer, J., D., Deal, B., E., Meindl, J., D. 1978; 125 (4): 665-671
  • Two Dimensional Transmit/Receive Piezoelectric Arrays - Construction and Performance IEEE Journal Sonics and Ultrasonics Plummer, J., D., Swartz, R., G., Maginness, M., G., Beaudouin, J., R., Meindl, J., D. 1978; SU-25 (5): 273-280
  • Avalanche Breakdown in High Voltage D-MOS Devices IEEE Transactions on Electron Devices, ED-23 Declercq, M., J., Plummer, J., D. 1976: 1-4
  • Filter Bank Approach for Volume and Mean Flow Estimation in an Ultrasonic Blood Flowmeter Bulletin Electrochemical Laboratory, Japan Hayashi, Y., Plummer, J., D., Allen, H., V., Gill, R., W., Meindl, J., D. 1976; 40 (4, 5): 392-408
  • A Monolithic 200 Volt CMOS Analog Switch IEEE Journal of Solid State Circuits Plummer, J., D., Meindl, J., D. 1976; SC-11: 809-817
  • Silicon Through-Hole Substrate Bulletin Electrochemical Laboratory, Japan Hayashi, Y., Hayashi, F., Plummer, J., D., Meindl, J., D. 1976; 40 (4, 5): 409-416
  • Ultrasonic Imaging Using Two-Dimensional Transducer Arrays Cardiovascular Imaging and Image Processing, Theory and Practice Beaver, W., L., Maginness, M., G., Plummer, J., D., Meindl, J., D. 1975; 72
  • MOS Electronics for a Portable Reading Aid for the Blind IEEE Journal of Solid-State Circuits, SC-7 Plummer, J., D., Meindl, J., D. 1972: 111-120
  • Integrated Electronics for a Reading Aid for the Blind IEEE Journal of Solid-State Circuits, SC-4 Brugler, J., S., Meindl, J., D., Plummer, J., D., Salsbury, P., J., Young, W., T. 1969: 304-312

Books and Book Chapters


  • Silicon VLSI Technology – Fundamentals, Practice and Modeling Plummer, J., D., Deal, M., D., Griffin, P., B. Prentice Hall, Upper Saddle River, NJ. 2000
  • Silicon Epitaxy and Oxidation Process and Device Modeling for Integrated Circuit Design Meindl, J., D., Dutton, R., W., Saraswat, K., C., Plummer, J., D., Kamins, T., I., Dea, B., E. edited by Wiele, V., Engl, Jespers Noordhoff-Leyden. 1977: 57-113

Conference Proceedings


  • Optimal Device Architecture and Hetero-Integration Scheme for III-V CMOS Yuan, Z., Kumar, A., Chen, C., Y., Nainani, A., Griffin, P., Plummer, J. 2013
  • The Future of the Semiconductor Industry and What Does This Imply for Universities? Plummer, J., D. 2012
  • Si CMOS – What happens When Scaling Isn’t An Option? Plummer, J., D. 2010
  • Opportunities and Challenges in the Semiconductor Industry Plummer, J., D. 2008
  • BTBT Transistor Scaling: Can they be Competitive with MOSFETs? 2008 DRC Woo, R., Koh, H., Y. Serene, Onal, C., Griffin, P., B., Plummer, James, D. 2008
  • A High-Resolution Low-Power Oversampling ADC with Extended-Range for Bio-Sensor Arrays Agah, A., Vleugels, K., Griffin, P., B., Ronaghi, M., Plummer, J., D., Wooley, B., A. 2007
  • Novel Methods for Ultrashallow Low Resistance Junction Formation Jain, S., Griffin, P., B., Plummer, J., D. 2006
  • Novel Methods for Ultrashallow Low Resistance Junction Formation Jain, S., H., Griffin, P., B., Plummer, J., D. 2006
  • Novel Methods for Ultrashallow Low Resistance Junction Formation Jain, S., Griffin, P., B., Plummer, J., D. 2006
  • Ni2 and NiSi Formation by Low Temperature Soak and Spike RTPs Kim, E., Forstner, H., Foad, M., Tam, N., Ramamurthy, S., Griffin, P., B., Plummer, J. 2005
  • A Novel SiGe-based Negative Differential Resistance (NDR) Device Liang, Y., Gopalakrishnan, K., Griffin, P., B., Plummer, J., D. 2005
  • Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy Liu, F. Y., Griffin, P. B., Plummer, J. D., Lyding, J. W., Moran, J. M., Richards, J. F., Kulig, L. A V S AMER INST PHYSICS. 2004: 422-426
  • What’s Hot in Engineering – A Look at the Next 25 years Plummer, J., D. 2004
  • Silicon-based Devices and Technology for the Nanoscale Era Plummer, J., D. 2004
  • Low Resistant Contacts to Laser Annealed Junctions Kim, E., Griffin, P., B., Plummer, J., D. 2004
  • Critical Thickness Enhancement of Epitaxial SiGe Films Grown on Small Structures Liang, Y., Nix, W., D., Griffin, P., B., Plummer, J., D. 2004
  • CMOS Compatible Liquid-Phase Epitaxial Growth of Ge on Si Substrates Liu, Y., Deal, M., D., Plummer, J., D. 2004
  • Carrier Profiling via STM/STS; Comparison with SCM and SIMS Liu, F., Y., Griffin, P., B., Plummer, J., D., Lyding, J., W, Morse, J., M., Richards, J., F. 2003
  • Miniaturized DNA Analysis Devices Griffin, P., Agah, A., Plummer, J., D., Eltoukhy, P., H., Salama, K., Gamal, A., El 2002
  • Dopant Deactivation in Heavily Sb Doped Si (001): High Resolution X-ray Diffraction Study Takamura, Y., Vailionis, A., Griffin, P., B., Plummer, J., D. 2002
  • A Study of the Deactivation of High Concentration, Laser Annealed Dopant Profiles in Silicon Ngau, J., L., Griffin, P., B., Plummer, J., D. 2002
  • Ultrashallow, Low Resistivity Junctions in MOS Devices Takamura, Y., Jain, S., Griffin, P., B., Plummer, J., D. 2001
  • Electronic Structure and Properties of Tetrahedral Hafnium and Zirconium Silicates Jameson, J., R, Harrison, W., A., Griffin, P., B., Plummer, J., D. 2001
  • Perspectives on the Past, Present and Future of the Semiconductor Industry Plummer, J., D. 2001
  • Issues In Ultra Shallow Junction Fabrication: Dopant Activation and Defect Kinetics Plummer, J., D. 2001
  • Challenges in Characterization and Formation of Ultra Shallow Junctions Using Arsenic Implants Kasnavi, R., Griffin, P., B., Plummer, J., D. 2001
  • Complete Model for Carbon Suppression of Boron Transient Enhanced Diffusion in Silicon Ngau, J., L., Griffin, P., B., Plummer, J., D. 2001
  • Material and Process Limits in Silicon VLSI Technology Plummer, J., D., Griffin, P., B. 2001
  • On a Novel Technique for the Electrical Characterization of Polycrystalline Silicon Ionescu, A., M., Tringe, J., Chovet, A., Plummer, J., D. 2000
  • Limits of Scaling Shallow Junctions Using Ultra Low Energy Arsenic Implants Kasnavi, R., Griffin, P., B., Plummer, J., D. 2000
  • A Comparative Study of Dose Loss for B11 and BF2 Implants Kasnavi, R., Griffin, P., B., Plummer, J., D. 2000
  • 50-nm Vertical Replacement-Gate (VRG) pMOSFETs Oh, S., H., Authors, 2., Plummer, J., D. 2000
  • What Does Silicon Self-diffusion Tell Us About Ultra-shallow Junctions Ural, A., Koh, S., H., Griffin, P., B., Plummer, J., D. 2000
  • Pseudo-Mos Operation of Ultra-Narrow Polysilicon Wires: Electrical Characterization and Memory Effects Anghel, C., Hefyene, N., Ionescu, A., M., Tringe, J., Plummer, J., D. 2000
  • Coupled Diffusion of Dopants Ural, A., Griffin, P., B., Plummer, J., D. 2000
  • Silicon MOSFETs (Conventional and Non-Traditional) at the Scaling Limit Plummer, J., D. 2000
  • Modeling and Fabrication of Vertical Pillar MOSFETs made in Recrystallized Si Cho, H., J., Plummer, J., D. 2000
  • Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures Ural, A., Griffin, P. B., Plummer, J. D. ELSEVIER SCIENCE BV. 1999: 512-515
  • A Self-Aligned Split-Gate Pillar Flash EEPROM Cell Hayashi, F., Plummer, J., D. 1999
  • Diffusional Hillock Formation in Al Thin Films Controlled by Creep Kim, D., K., Nix, W., D, Arzi, E., Deal, M., Plummer, J., D. 1999
  • Thermal Conduction in Doped Single-Crystal Silicon Films Asheghi, M., Kurabayashi, K., Goodson, K., E., Kasnavi, R., Plummer, J., D. 1999
  • A Novel Thryristor-based SRAM Cell (T-RAM) for High-Speed, Low Voltage Giga-scale Memories Nemati, F., Plummer, J., D. 1999
  • High Performance Fully and Partially Depleted Poly-Si Surround Gate Transistors Cho, H., J., Plummer, J., D. 1999
  • Two-Dimensional Dopant Diffusion and Activation Study Using Scanning Capacitance Microscopy Yu, G., M., Griffin, P., B., Plummer, J., D. 1999
  • Interdisciplinary Research - Examples From the Silicon Chip World Plummer, J., D. 1999
  • Biomedical Applications of MEMS and Nanotechnologies Plummer, J., D. 1999
  • A vertical high voltage termination structure for high-resistivity silicon detectors Segal, J. D., Kenney, C. J., Aw, C. H., Parker, S. I., Vilkelis, G., Iwanczyk, J. S., Patt, B. E., Plummer, J. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1998: 364-369
  • The National Nanofabrication Users Network - Sharing Hi-Tech Facilities to Stimulate New Applications of Silicon Technology Plummer, J., D. 1998
  • Computer Simulation Of Silicon Technology Plummer, J., D. 1998
  • A Novel High Density, Low Voltage SRAM Cell with a Vertical NDR Device Nemati, F., Plummer, J., D. 1998
  • Point Defect Based Modeling of Dopant Diffusion and Transient Enhanced Diffusion in Silicon Plummer, J., D. 1998
  • Validation of Two-Dimensional Implant and Diffusion Profiles Using Novel Scanning Capacitance Microscope Sample Preparation and Deconvolution Techniques Yu, G., M., Griffin, P., B., Plummer, J., D. 1998
  • Dynamics of Arsenic Dose Loss at the SiO2 Interface During TED Kasnavi, R., Griffin, P., B., Plummer, J., D. 1998
  • Semiconductor Industry-University Collaboration and Impacts on Education - A University Perspective Plummer, J., D. 1998
  • Dynamics of Arsenic Dose Loss at the SiO2 Interface Kasnavi, R., Griffin, P., B., Plummer, J., D. 1998
  • Silicon Technology and Devices for the 21st Century Plummer, J., D. 1998
  • Atomic and Molecular Physics Needs for Designing and Manufacturing Silicon Integrated Circuits Plummer, J., D. 1998
  • A Novel Pillar DRAM Cell for 4Gbit and Beyond Cho, H., J., Nemati, F., Griffin, P., B., Plummer, J., D. 1998
  • Design and characterization of SiGe TFT devices and process using Stanford's test chip design environment Kumar, M. V., Subramanian, V., Saraswat, K. C., Plummer, J. D., Lukaszek, W. I E E E. 1997: 143-145
  • Silicon TED Process Simulation - What’s Possible Today and What Will Be Needed Tomorrow? Plummer, J., D. 1997
  • Defects and Diffusion Issues for The Manufacturing of Semiconductors in the 21st Century Plummer, J., D. 1997
  • The Influence of Amorphizing Implants on Boron Transient Enhanced Diffusion in Silicon Chao, H., S., Griffin, P., B., Plummer, J., D. 1997
  • Cross-sectional TEM Sample Preparation Using E-beam Lithography and Reactive Ion Etching Cho, H., J., Griffin, P., B., Plummer, J., D. 1997
  • Process Modeling For 21st Century Silicon Devices Plummer, J., D. 1997
  • Simulation and modelling of a new silicon X-ray drift detector design for synchrotron radiation applications Iwanczyk, J. S., Patt, B. E., Segal, J., Plummer, J., Vilkelis, G., Hedman, B., Hodgson, K. O., Cox, A. D., Rehn, L., Metz, J. ELSEVIER SCIENCE BV. 1996: 288-294
  • TCAD - The Semiconductor Industry Roadmap and a Path to the Future Plummer, J., D. 1996
  • Modeling Stress Effects on Thin Oxides for Trench Isolation Huang, S., F., Griffin, P., B., Plummer, J., D. 1996
  • 0.18µm Dual Vt MOSFET Process and Energy-Delay Measurement Chen, Z., Diaz, C., Plummer, J., D., Cao, M., Greene, W. 1996
  • Temperature Ramp Rate Dependence of Transient Enhanced Dopant Diffusion Perozziello, E., A., Griffin, P., B., Plummer, J., D. 1996
  • Short Anneal Time Behavior of Transient Enhanced Diffusion Chao, H., S., Rafferty, C., S., Griffin, P., B., Plummer, J., D. 1996
  • The Effects of Source/Drain Processing on the Reverse Short Channel Effect of Deep Submicron Bulk and SOI MOSFETs Crowder, S., Rousseau, P., Snyder, J., Scott, J., Plummer, J. 1996
  • Silicon Oxidation Kinetics - From Deal-Grove to VLSI Process Models Plummer, J., D. 1996
  • Physical Modeling of Transient Enhanced Diffusion in Silicon Griffin, P., B., Plummer, J., D. 1996
  • A Test Structure Advisor and a Coupled, Library-Based Test Structure Layout and Testing Environment Kumar, M., V., Plummer, J., D., Lukaszek, W. 1996
  • A test structure advisor and a coupled, library-based test structure layout and testing environment Kumar, M. V., Plummer, J. D., Lukaszek, W. IEEE. 1996: 201-205
  • CHALLENGES FOR PREDICTIVE PROCESS SIMULATION IN SUB 0.1 MU-M SILICON DEVICES Plummer, J. D., Griffin, P. B. ELSEVIER SCIENCE BV. 1995: 160-166
  • Incorporating Point-Defect Dynamics into Process Simulation Plummer, J., D. 1995
  • Computational Prototyping For 21st Century Semiconductor Devices Plummer, J., D. 1995
  • Transient Enhanced Diffusion During Implant Damage Annealing Plummer, J., D. 1995
  • Challenges For Predictive Process Simulation in Sub 0.1 Micron Silicon Devices Plummer, J., D., Griffin, P., B. 1995
  • Physically Based Process Simulation for Submicron Silicon Devices Plummer, J., D. 1995
  • Computational Prototyping for Advanced Semiconductor Structures Plummer, J., D. 1995
  • Optimization of Quarter Micron MOSFETs for Low Voltage/Low Power Applications Chen, Z., Burr, J., Shott, J., Plummer, J., D. 1995
  • Computational Prototyping for Advanced Semiconductor Devices Plummer, J., D. 1995
  • Computational Prototyping for 21st Century Structures Plummer, J., D. 1995
  • Technology CAD - Status and Future Possibilities Plummer, J., D. 1995
  • Low Threshold Voltage Quarter Micron MOSFETs for Low Power Applications Chen, Z., Plummer, J., D. 1995
  • HIGH-MOBILITY SI1-XGEX PMOS TRANSISTORS TO 5K Scott, J. A., Croke, E. T., Plummer, J. D. EDITIONS PHYSIQUE. 1994: 69-74
  • A PROTOTYPE MONOLITHIC PIXEL DETECTOR Kenney, C. J., Parker, S. I., Peterson, V. Z., Snoeys, W. J., Plummer, J. D., Aw, C. H. ELSEVIER SCIENCE BV. 1994: 59-77
  • A Comparison of Implant Enhanced Dopant Diffusion in Bulk and SOI Material Crowder, S., W., Griffin, P., B., Plummer, J., D. 1994
  • A Twin Polysilicon TFT Planar EEPROM Cell Zhao, T., Cao, M., Plummer, J., D., Saraswat, K., C. 1994
  • SOI - Power ICs, VLSI Devices and Process Technology Issues Plummer, J., D. 1994
  • CMOS Technology Scaling for Low Voltage, Low Power Applications Chen, Z., Shott, J., Burr, J., Plummer, J., D. 1994
  • Challenges For Predictive Process Simulation in Sub 0.1 Micron Silicon Devices Plummer, J., D. 1994
  • IIA-5 1ST DIRECT BETA-MEASUREMENT FOR PARASITIC LATERAL BIPOLAR-TRANSISTORS IN FULLY-DEPLETED SOI MOSFETS PLOEG, E. V., Nguyen, C., KISTLER, N., Wong, S., Woo, J., Plummer, J. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1993: 2101-2102
  • A 3-D SIDEWALL FLASH EPROM CELL AND MEMORY ARRAY PEIN, H., Plummer, J. D. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1993: 2126-2127
  • PERFORMANCE OF A MONOLITHIC PIXEL DETECTOR Kenney, C., Parker, S., Snoeys, W., Plummer, J., ROSSEEL, G., Aw, C. H. ELSEVIER SCIENCE BV. 1993: 460-467
  • 1ST BEAM TEST-RESULTS FROM A MONOLITHIC SILICON PIXEL DETECTOR Snoeys, W., Plummer, J., ROSSEEL, G., Aw, C. H., Kenney, C., Parker, S. ELSEVIER SCIENCE BV. 1993: 144-149
  • A Novel Floating Gate Spacer Polysilicon TFT Zhao, T., Cao, M., Plummer, J., D., Saraswat, K., C. 1993
  • Hydrogenation of Polycrystalline Si TFTs by Ion Implantation Cao, M., Zhao, T., Saraswat, K., C., Plummer, J., D. 1993
  • Evidence for a Kickout Mechanism for Ge Diffusion in Si Perozziello, E., A., Griffin, P., B., Plummer, J., D. 1993
  • A Novel Vertical Polysilicon Memory Device Zhao, T., Plummer, J., D. 1993
  • The Role of Extended Defects in Dopant Diffusion Huang, R., Y. S., Roth, D., J., Plummer, J., D., Dutton, R., W. 1993
  • Simulating Complex Process Sequences in Semiconductors, Particularly Silicon Plummer, J., D. 1993
  • Process Simulation in Submicron Silicon Structures Plummer, J., D. 1993
  • A Novel Vertical Submicron Polysilicon TFT Zhao, T., Plummer, J., D. 1993
  • Performance of the 3-D Sidewall Flash EPROM Cell Pein, H., Plummer, J., D. 1993
  • Oxidation Enhanced Diffusion in Thin SOI Films Crowder, S., W., Griffin, P., B., Plummer, J., D. 1993
  • Experimental Characterization of Arsenic Segregation Behavior in the Poly/Single-Crystal Silicon System Luning, S., Plummer, J., D. 1993
  • First Direct Measurement for Parasitic Lateral Bipolar Transistors in Fully Depleted SOI MOSFETs VerPloeg, E., Nguyen, C., Kistler, N., Wong, S., Woo, J., Plummer, J., D. 1993
  • A Parametric Design Tool for Device Space Exploration Wong, W., Yang, D., Plummer, J., D., Dutton, R., W. 1993
  • Oxidation Enhanced Diffusion of Boron and Phosphorus in Heavily Doped Layers in Silicon Roth, D., J., Plummer, J. 1993
  • Instruction and Prototyping Using the Virtual Factory Plummer, J., D. 1993
  • First Beam Test Results from a Monolithic Silicon Pixel Detector Snoeys, W., Plummer, J., Rosseel, G., Aw, C., H., Kenney, C., Parker, S. 1993
  • 2-D Current Flow Effects in Bipolar Transistors at Cryogenic Temperature Weybright, M., E., Plummer, J., D. 1993
  • Species, Dose and Energy Dependence of Implant Induced Transient Enhanced Diffusion Griffin, P., B., Lever, R., F., Kennel, H., W., Packan, P., A., Plummer, J., D. 1993
  • Modeling the Diffusion Behavior of Implanted Beryllium in Gaalium Arsenide Using SUPREM-IV Hu, C., J., Deal, M., D., Robinson, H., G., Plummer, J., D. 1993
  • Activation and Deactivation of High Concentration Arsenic with Some Evidence of Precipitation Rousseau, P., M., Griffin, P., B., Carey, P., G., Plummer, J., D. 1993
  • A Simple SPICE Level-3 Model For Polysilicon TFT DC ON-Current Zhao, T., Plummer, J., D. 1993
  • A NEW INTEGRATED PIXEL DETECTOR FOR HIGH-ENERGY PHYSICS Snoeys, W., Plummer, J., Parker, S., Kenney, C. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1992: 1263-1269
  • Fast Switching LIGT Devices in SOI Substrates Disney, D., R., Plummer, J., D. 1992
  • A Virtual Factory-Based Environment for Semiconductor Device Development Wong, W., T., Pan, J., Plummer, J., D. 1992
  • Kinetics of High Concentration Arsenic Deactivation at Moderate to Low Temperatures Luning, S., Rouseau, P., M., Griffin, P., B., Carey, P., G., Plummer, J., D. 1992
  • Elimination of Bipolar-Induced Breakdown in Fully-Depleted SOI MOSFETs VerPloeg, E., P., Watanabe, T., Kistler, N., A, Woo, J., C. S., Plummer, J., D. 1992
  • Dependence of Fully Depleted SOI MOSFET Breakdown Voltage on Film Thickness and Channel Length Kistler, N., VerPloeg, E., Woo, J., Plummer, J., D. 1992
  • Thermal Oxidation Kinetics and LOCOS Isolation in SOI Materials Crowder, S., Griffin, P., Plummer, J., D. 1992
  • AC Characterization and Modeling of the GexSi1-x/Si BICFET Mierzwinski, M., E., Plummer, J., D., Croke, E., T., Iyer, S., S., Harrell, M., J. 1992
  • A Virtual Factory-Based Environment for Semiconductor Device Development Wong, W., Pan, J., Plummer, J. 1992
  • A NEW DEVICE STRUCTURE AND PROCESS FLOW FOR A LOW-LEAKAGE P-I-N DIODE-BASED INTEGRATED DETECTOR ARRAY Snoeys, W., Plummer, J., Parker, S., Kenney, C. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1991: 2696-2697
  • Consistent Models for Point Defects in Silicon Griffin, P., B., Packan, P., A., Plummer, J., D. 1991
  • A New Integrated Pixel Detector for High Energy Physics Snoeys, W., Plummer, J., D., Parker, S., Kenney, C. 1991
  • Process Physics in Submicron VLSI Devices Plummer, J., D. 1991
  • MBiCMOS: A Device and Circuit Technique Scalable to Sub-Micron, Sub-2V Regime Raje, P., Ritts, R., Cham, K., Plummer, J., Saraswat, K. 1991
  • The Superlattice Disordering Probe: A Tool for Modeling Diffusion in III-V Semiconductors Allen, E., L., Pass, C., J., Deal, M., D., Plummer, J., D., Chia, V., K. F. 1991
  • The Superlattice Disordering Probe: A Tool for Modeling Diffusion in GaAs Allen, E., L., Pass, C., J., Deal, M., D., Plummer, J., D., Chia, V., K. F. 1991
  • First Results from an Integrated Pixel Detector Parker, S., Kenney, C., Snoeys, W., Plummer, J., D. 1991
  • Bipolar Transistor Modeling Over Temperature Weybright, M., E., Plummer, J., D. 1991
  • Diffusion of Ion-Implanted Group IV Atoms in Gallium Arsenide Allen, E., L., Murray, J., J., Deal, M., D., Plummer, J., D., Jones, K., S., Rubart, W., S. 1990
  • A Novel DC Measurement Method for the Accurate Extraction of Bipolar Resistive Parasitics Taft, R., C., Plummer, J., D. 1990
  • A Model For Si Activation in GaAs Vanasupa, L., S., Deal, M., D., Plummer, J., D. 1990
  • Variations in Point Defect Concentrations Associated with Oxygen Precipitation in Czochralski Silicon Kennel, H., W., Plummer, J., D. 1990
  • Etching, Deposition, Diffusion and Oxidation Models in SUPREM IV Huang, R., Aum, P., Griffin, P., Plummer, J., Dutton, R. 1990
  • Complementary Merged BiCMOS with Vertical PNP Ritts, R., B., Plummer, J., D. 1990
  • Bipolar Transistor Modeling Over Temperature Weybright, M., E., Plummer, J., D. 1990
  • Transient and Small-Signal Modeling of the GexSi1-x/Si BICFET Mierzwinski, M., E., Taft, R., C., Plummer, J., D. 1990
  • Process and Device Modeling Plummer, J., D. 1990
  • Dielectric Isolation of Silicon through SEG/ELO in Trenches Boisvert, D., M., Plummer, J., D., Borland, J., O. 1989
  • Point Defects and Dopant Diffusion in Silicon Fahey, P., M., Griffin, P., B., Plummer, J., D. 1989
  • Process Simulation for High Performance Bipolar and BiCMOS Devices Plummer, J., D., Griffin, P., B. 1989
  • Microelectronics After 30 Years - Is There Still Room for Innovation? Plummer, J., D. 1989
  • Hole Mobilities in GexSi1-x/Si Strain-Layer Quantum Wells Taft, R., C., Plummer, J., D., Iyer, S., S. 1989
  • SURFACE-POTENTIAL FLUCTUATIONS IN MOS DEVICES INDUCED BY THE RANDOM DISTRIBUTION OF CHANNEL DOPANT IONS WATT, J. T., Plummer, J. D. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1988: 2431-2431
  • DEVICE PHYSICS AND OPTIMIZATION OF CONDUCTIVITY-MODULATED POWER MOSFETS Liu, D. K., Plummer, J. D. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1988: 2457-2458
  • VACANCY GENERATION AT THE SI/SIO2 INTERFACE CAUSED BY SIO FORMATION Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A. ELECTROCHEMICAL SOC INC. 1988: C362-C362
  • A LOW ION ENERGY TRENCH ETCH PROCESS FOR POWER MOS APPLICATIONS Petti, C. J., McVittie, J. P., Plummer, J. D. ELECTROCHEMICAL SOC INC. 1988: C359-C359
  • Fabrication of a p-Channel BICFET in the GexSi1-x/Si Systems Taft, R., C., Plummer, J., D., Iyer, S., S. 1988
  • Characterization of Surface Mobility on the Sidewalls of Dry-Etched Trenches Petti, C., J., McVittie, J., P., Plummer, J., D. 1988
  • Advanced Diffusion Models for VLSI Griffin, P., B., Plummer, J., D. 1988
  • Effect of Thin Film Stress on Dopant Diffusion in Silicon Ahn, S., T., Kennel, H., W., Plummer, J., D., Tiller, W., A. 1988
  • A Physical Model for the Observed Dependence of the Metal-Semiconductor Work Function Difference on Substrate Orientation Massoud, H., Z., Plummer, J., D. 1988
  • Optimization of Bipolar Transistors for Low Temperature Operation Watt, J., T., Plummer, J., D. 1987
  • Effect of Interconnection Delay on Liquid Nitrogen Temperature CMOS Circuit Performance Watt, J., T., Plummer, J., D. 1987
  • Universal Mobility Field Curves for Electrons and Holes in MOS Inversion Layers Watt, J., T., Plummer, J., D. 1987
  • SUPREM 3.5 - Process Modeling of GaAs Deal, M., D., Hansen, S., E., Anholt, R., Chou, S., Plummer, J., D., Dutton, R., W. 1987
  • The Field Assisted Turn-Off Thyristor: A Regenerative Device with Voltage Controlled Turn-Off Petti, C., J., Plummer, J., D. 1987
  • Characterization of Cs Oxide Implants for Use in MOS Devices Operated at 77K Fishbein, B., J., Watt, J., T., Plummer, J., D. 1987
  • Prospects for Cooled MOS Devices and Circuits Plummer, J., D. 1987
  • Kinetic Studies of Silicon-Silicon Dioxide Interface Trap Annealing Using Rapid Thermal Processing Reed, L., Plummer, J., D. 1986
  • Complementary Silicon MESFETs for VLSI MacWilliams, K., P., Plummer, J., D. 1986
  • Modeling Dopant Redistribution in SiO2/WSi2/Si Structures Shone, F., C., Hansen, S., E., Kao, D., B., Saraswat, K., C., Plummer, J., D. 1986
  • Process Physics Determining 2D Impurity Profiles in VLSI Devices Griffin, P., B., Plummer, J., D. 1986
  • Low Temperature CMOS Devices and Technology Plummer, J., D. 1986
  • Kinetic Modeling of <100> and <111> Interface Trap Annealing Reed, M., L., Plummer, J., D. 1986
  • Process Physics: Implications for Manufacturing of Submicron Silicon Devices Plummer, J., D. 1986
  • Impact of Processing Parameters on Base Current in Polysilicon Contacted Bipolar Transistors Patton, G., L., Bravman, J., C., Plummer, J., D. 1985
  • Formation of 0.1 µm N++p and P++N Junctions by Doped Silicide Technology Shone, F., C., Saraswat, K., C., Plummer, J., D. 1985
  • Insulator/Silicon Interfaces - Impact on Substrate Defects and Impurity Diffusion in VLSI Structures Plummer, J., D. 1985
  • Gettering in Low Temperature VLSI Processes Bronner, G., B., Plummer, J., D. 1985
  • A Quantitative Model for Si/SiO2 Interface Charges in Oxidizing and Dilute Oxidizing Ambients Akinwande, A., I., Plummer, J., D. 1985
  • Substrate Current in N-Channel and P-Channel MOSFETs Between 77K and 300K: Characterization and Simulation Henning, A., K., Chan, N., Plummer, J., D. 1985
  • Modified LDD Device Structures for VLSI Bampi, S., Plummer, J., D. 1985
  • A New Silicided Shallow Junction Technology for CMOS VLSI Shone, F., C., Saraswat, K., C., Plummer, J., D. 1985
  • A High Voltage Monolithic Multiplexer for Use in Vehicle Tester Applications Plummer, J., D., Sevilla, L., T., McCarthy, P., F., Sherman, J., D. 1985
  • Structural Aspects of Polysilicon Emitter Contacts Bravman, J., C., Patton, G., L., Plummer, J., D. 1984
  • Simulation of Multilayer Structures for VLSI Using the SUPREM III Process Simulation Program Hansen, S., E., Shott, J., D., Fahey, P., M., Plummer, J., D., Dutton, R., W. 1984
  • Physical Modeling of Backside Gettering Bronner, G., B., Plummer, J., D. 1984
  • Characterization of Bipolar Transistors with Polysilicon Emitter Contacts Patton, G., L., Bravman, J., C., Plummer, J., D. 1984
  • Point Defect Generation During Silicon Oxidation Dunham, S., Plummer, J. 1984
  • Physical Modeling of Backside Damage Gettering Bronner, G., B., Plummer, J., D. 1984
  • The Role of Point Defects in VLSI Processing Lin, A., Dutton, R., W., Plummer, J., D. 1983
  • Current Problems in Silicon Oxidation Plummer, J., D. 1983
  • SUPREM III - Process Simulation Toward VLSI Ho, C., P., Plummer, J., D., Hansen, S., E., Dutton, R., W. 1983
  • Kinetics of As-Grown Fixed Oxide Charge Nf at the Si-SiO2 Interface During Thermal Oxidation of Silicon Akinwande, A., I., Ho, C., P., Plummer, J., D. 1983
  • Thermal Oxidation: Kinetics, Charges, Physical Models, and Interaction with Other Processes in VLSI Devices Plummer, J., D., Deal, B., E. 1983
  • Trench Isolation Technology and Device Physics Goodwin, S., H., Plummer, J., D. 1983
  • A Comparison of Buried Channel and Surface Channel MOSFETs for VLSI Nguyen, T., N., Plummer, J., D. 1982
  • Process Dependence of Si/SiO2 Interface Charges Akinwande, A., I., Ho, C., P., Plummer, J., D. 1982
  • Oxide Growth Kinetics and Mechanical Stress Effects in the Thin Regime (<500 Å), Massoud, H., Z., Ho, C., P., Irene, E., A., Plummer, J., D. 1982
  • The Use of 2D Effects in LOCOS Structures to Improve Device Isolation Goodwin, S., H., Plummer, J., D. 1982
  • An Implantable Ion Sensor Transducer Harame, D., Shott, J., Plummer, J., Meindl, J., D. 1981
  • The Role of the Si/SiO2 Interface in Silicon Oxidation Kinetics Plummer, J., D. 1981
  • Physical Mechanisms Responsible for Short Channel Effects in MOS Devices Nguyen, T., N., Plummer, J., D. 1981
  • Measurement of Submicron Potential Barriers in Depleted Base Transistors Stork, J., M. C., Plummer, J., D. 1981
  • Thermal Oxidation of Silicon in Dry O2 in the Thin Regime Massoud, H., Z., Plummer, J., D., Irene, E., A. 1981
  • Process Sensitivity of Depleted Base Bipolar Transistors (BSIT) Stork, J., M. C., Plummer, J., D. 1981
  • Monolithic MOS High Voltage Integrated Circuits Plummer, J., D. 1980
  • Modeling of Depleted Base Bipolar Structures Stork, J., M. C., Plummer, J., D. 1980
  • Growth Kinetics and Charge Properties of Thin, Thermally Grown SiO2 Layers on Silicon Massoud, H., Z., Ho, C., P., Plummer, J., D. 1980
  • Thermal Oxidation: Kinetics, Charges, Physical Models and Application Plummer, J., D. 1980
  • Technology and Device Structures for VLSI Plummer, J., D. 1980
  • An Advanced 34 Element Monolithic Silicon-PVF2 Piezoelectric Array for Ultrasonic Imaging Swartz, R., G., Plummer, J., D. 1979
  • An Electronically Addressed Bulk Acoustic Wave Fourier Transform Device Auld, B., A., Pettibone, D., W., Plummer, J., D., Swartz, R., G. 1979
  • Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces Sun, S., C., Plummer, J., D. 1979
  • Thermal Oxidation of Heavily Doped Silicon: Physical Modeling and Device Applications Ho, C., P., Plummer, J., D. 1978
  • A MOS-Controlled Triac Device Scharf, B., W., Plummer, J., D. 1978
  • Thermal Oxides Plummer, J., D. 1978
  • Process Phenomena - Silicon Oxidation Plummer, J., D. 1977
  • The Need for Process Models in a Ubiquitous Technology Meindl, J., D., Saraswat, K., C., Plummer, J., D. 1977
  • A Monolithic 200 Volt CMOS Analog Switch Plummer, J., D., Meindl, J., D. 1976
  • State-of-the-art in Two Dimensional Ultrasonic Transducer Array Technology Maginness, M., G., Plummer, J., D., Beaver, W., L., Meindl, J., D. 1975
  • A New Ultrasonic Imaging System for Real Time Cardiac Imaging Plummer, J., D., Meindl, J., D., Maginness, M., G. 1974
  • A Real Time 3-D Ultrasonic Imaging System Meindl, J., D., Plummer, J., D., Maginness, M., G. 1974
  • Ultrasonic Imaging System for Real Time Cardiac Imaging Susal, A., L., Plummer, J., D., Maginness, M., G., Meindl, J., D. 1974
  • An Acoustic-Image Sensor Using a Transmit-Receive Array Plummer, J., D., Meindl, J., D., Maginness, M., G. 1973
  • Real Time Imaging Using a Transmit-Receive Transducer Array Maginness, M., G., Plummer, J., D., Meindl, J., D., Susal, A., L. 1973
  • A Cardiac Dynamics Visualization System Maginness, M., G., Plummer, J., D., Meindl, J., D., Susal, A., L. 1973
  • Solid-State Image Sensors for Biomedical Applications Melen, R., D., Garland, H., T., Linvill, J., G., Maginness, M., G., Plummer, J., D., Meindl, J., D. 1973
  • A Low-Light Self-Scanned MOS Image Sensor Plummer, J., D., Meindl, J., D. 1972
  • High Voltage Monolithic MOS Driver Arrays Plummer, J., D., Berger, J., Meindl, J., D. 1971
  • A Reading Aid for the Blind Using MOS Electronics Plummer, J., D., Meindl, J., D. 1970
  • Integrated Electronics for a Reading Aid for the Blind Meindl, J., D., Plummer, J., D., Salsbury, P., J., Brugler, J., S. 1969