Jim Plummer

John M. Fluke Professor of Electrical Engineering and Professor, by courtesy, of Materials Science and Engineering

Web page: https://profiles.stanford.edu/jim-plummer

Bio

Jim Plummer was born in Toronto, Canada. He obtained his BS degree from UCLA and his MS and PhD degrees in Electrical Engineering from Stanford University. He joined the Stanford faculty in 1978 as an associate professor. He became professor of electrical engineering in 1983.

His career at Stanford has included serving as director of the IC Laboratory, senior associate dean in the School of Engineering, and chair of the Electrical Engineering Department. He was the Frederick Emmons Terman Dean of the School of Engineering from 1999 until 2014. He also holds the John Fluke Professorship in Electrical Engineering. During his tenure as dean, the school renewed or replaced much of its laboratory and classroom space, dramatically increased the number of undergraduate students majoring in engineering and created interdisciplinary programs like the Bioengineering Department, which is jointly operated with the medical school, ICME, the Institute For Computational and Mathematical Engineering, and the Hasso Plattner Institute of Design (d.school) that changed the nature of engineering education. Plummer was a strong advocate as dean, for ensuring that engineering majors take advantage of the full set of opportunities at a liberal arts institution like Stanford.

Plummer has worked in a variety of areas in the broad field of silicon devices and technology. Much of his early work focused on high-voltage ICs and on high-voltage device structures. He and his group made important contributions to integrating CMOS logic and high-voltage lateral DMOS devices on the same chip and demonstrated circuits operating at several hundred volts. This work also led to several power MOS device concepts such as the IGBT which have become important power switching devices.

Throughout the 1980s and '90s, a major focus of his work was on silicon process modeling. This work involved many students and other faculty, particularly Professor Bob Dutton, and resulted in the development of several generations of SUPREM, which has become the standard process modeling tool used worldwide today. His recent work has focused on nanoscale silicon devices for logic and memory and power devices using wide bandgap semiconductor materials.

Plummer is a member of the National Academy of Engineering, the American Academy of Arts and Sciences and a fellow of the IEEE. He has received many awards for his research, including the 1991 Gordon Moore medal for Solid State Science and Technology from the Electrochemical Society, the 2001 Semiconductor Industry Association University Research Award, the 2003 IEEE J. J. Ebers Award, the 2003 IEEE Van der Ziel Award, the 2007 IEEE Andrew Grove award and the 2015 IEEE Founders Medal.He has been elected to the Silicon Valley and ISPSD Halls of Fame.

He has graduated more than 90 PhD students with whom he has published more than 500 journal papers and conference presentations. These papers have won eight conference and student best paper awards including two at IEDM and three at ISSCC. His textbooks,"Integrated Circuit Fabrication: Science and Technology" and "Silicon VLSI Technology: Fundamentals, Practice and Modeling," are used by many universities around the world (https://plummergriffinbook.stanford.edu). The link on this page provides information on how to download copies of these books for personal use. He has also received three teaching awards at Stanford. He has served and currently serves on the Board of Directors of several public companies including Intel and Cadence.

Plummer directed the Stanford Nanofabrication Facility from 1994 to 2000 and received an NSF commendation in 2000 for national leadership in building the NNUN, a consortium of universities who opened their nanofabrication facilities as national resources for industry and for students from around the nation.

Academic Appointments

Professor, Electrical Engineering
Professor (By courtesy), Materials Science and Engineering
Member, Bio-X
Affiliate, Precourt Institute for Energy

Administrative Appointments

Frederick Emmons Terman Dean, Stanford School of Engineering (1999 - 2014)
Chair, Electrical Engineering Dept. (1996 - 1999)
Senior Associate Dean, School of Engineering (1993 - 1996)

Honors & Awards

Best Paper Awards, ISSCC (1970, 1976, 1978)
ASSU Award for Teaching Excellence, ASSU (1991)
Solid State Science & Technology Award, Society (1991)
Stanford Tau Beta Pi Award for Excellence in Undergraduate Teaching, Tau Beta Pi (1992)
Best Paper Awards, IEDM (1993, 1995)
Best Teacher Award, Society of Women Engineers (1995)
Best Paper Award, ISPSD (1996)
Elected Member, National Academy of Engineering (1996)
Best Paper Award, MRS (2000)
Best Paper Award, ICDS (2000)
Third Millennium Medal, IEEE (2000)
University Research Award, Semiconductor Industry Association (2001)
Aldert Van der Ziel Award, IEEE (2003)
J.J. Ebers Award, IEEE (2003)
Laurels Award - Electronics, Aviation Week & Space Technology (2003)
Jacob Millman Award, McGraw-Hill (2004)
Paul Rappaport Award, IEDM (2006)
UCLA Engineering Academic Alumnus of the Year, UCLA (2006)
Andrew S. Grove Award, IEEE (2007)
Elected Member, American Academy of Arts & Sciences (2008)
Elected to Silicon Valley Engineering Hall of Fame, Silicon Valley Engineering Council (2014)
IEEE Founders Medal, IEEE (2015)
Elected to ISPSD Hall of Fame, International Symposium on Power Semiconductor Devices (2018)

Boards, Advisory Committees, Professional Organizations

Board of Directors, Cadence Corp (2011 - Present)
Board of Trustees, Olin College of Engineering (2015 - 2022)
Board of Directors, Intel Corp (2005 - 2017)
Board of Directors, Leadis Corp (2001 - 2010)
Board of Directors, International Rectifier Corp (1995 - 2015)

Program Affiliations

Stanford SystemX Alliance

Professional Education

PhD, Stanford, Electrical Engineering (1971)
MS, Stanford, Electrical Engineering (1967)
BS, UCLA, Electrical Engineering (1966)

Contact

Academic
plummer@stanford.edu
University - Faculty Department: Electrical Engineering Position: University Faculty
- Stanford University
- 420 Via Palou Mall
- CISX Rm 330
- Stanford, California 94305
- (650) 725-3606 (office)
University - Emeritus faculty Department: Electrical Engineering Position: Emeritus Faculty, Acad Council
- Huang Engineering Center 227
- Stanford, California 94305-4021
- (650) 725-3606 (office)

Additional Info

Mail Code: 4075

Current Research and Scholarly Interests

Dr. Plummer’s early work focused on high voltage ICs and on high voltage device structures. He and his group made important contributions to integrating CMOS logic and high voltage lateral DMOS devices on the same chip and demonstrated circuits operating at several hundred volts. This work also led to several power MOS device concepts such as the IGBT which have become important power switching devices.

Throughout the 1980s and 90s, a major focus of his work was on silicon process modeling. This work involved many students and other faculty, particularly Professor Bob Dutton, and resulted in the development of several generations of SUPREM, which has become the standard process modeling tool used worldwide today. Dr. Plummer’s contributions were principally in the areas of physical understanding and modeling of oxidation, diffusion, ion implantation and annealing. His recent work has focused on nanoscale silicon devices for logic and memory and has demonstrated new device concepts including vertical MOSFETs, the TRAM thyristor memory cell and the IMOS device which achieves < kT/q subthreshold slopes. Recent work has also focused on wide bandgap semiconductor materials, particularly SiC and GaN, for power control devices.

2024-25 Courses

Integrated Circuit Fabrication Processes
EE 212 (Aut)
Independent Studies (10)
- Graduate Independent Study
  MATSCI 399 (Aut, Win, Spr, Sum)
- Master's Research
  MATSCI 200 (Aut, Win, Spr, Sum)
- Master's Thesis and Thesis Research
  EE 300 (Aut, Win, Spr, Sum)
- Ph.D. Research
  MATSCI 300 (Aut, Win, Spr, Sum)
- Practical Training
  MATSCI 299 (Aut, Win, Spr, Sum)
- Special Studies and Reports in Electrical Engineering
  EE 191 (Aut, Win, Spr, Sum)
- Special Studies and Reports in Electrical Engineering
  EE 391 (Aut, Win, Spr, Sum)
- Special Studies and Reports in Electrical Engineering (WIM)
  EE 191W (Aut, Win, Spr, Sum)
- Special Studies or Projects in Electrical Engineering
  EE 190 (Aut, Win, Spr, Sum)
- Special Studies or Projects in Electrical Engineering
  EE 390 (Aut, Win, Spr, Sum)
Prior Year Courses
2023-24 Courses
- Integrated Circuit Fabrication Processes
  EE 212 (Aut)
- Power Semiconductor Devices and Technology
  EE 218 (Win)
2022-23 Courses
- Integrated Circuit Fabrication Processes
  EE 212 (Aut)
- Power Semiconductor Devices and Technology
  EE 218 (Spr)
2021-22 Courses
- Integrated Circuit Fabrication Processes
  EE 212 (Aut)

Stanford Advisees

Doctoral Dissertation Reader (AC)
ZHENGLIANG BIAN, Thomas Rodriguez, Victor Turbiner
Master's Program Advisor
Yulin Deng, Ryan Tran

All Publications

Rapid Melt Growth of Single Crystal InGaAs on Si Substrates ADVANCES IN MATERIALS SCIENCE AND ENGINEERING Bai, X., Chen, C., Mukherjee, N., Griffin, P. B., Plummer, J. D. 2016

View details for DOI 10.1155/2016/7139085

View details for Web of Science ID 000385104100001
Si incorporation from the seed into Ge stripes crystallized using rapid melt growth APPLIED PHYSICS LETTERS Bai, X., Chen, C., Griffin, P. B., Plummer, J. D. 2014; 104 (5)

View details for DOI 10.1063/1.4863976

View details for Web of Science ID 000331644100058
Low-Temperature Monolithic Three-Layer 3-D Process for FPGA IEEE ELECTRON DEVICE LETTERS Zhang, Z., Chen, C., Crnogorac, F., Chen, S., Griffin, P. B., Pease, R. F., Plummer, J. D., Wong, S. S. 2013; 34 (8): 1044-1046

View details for DOI 10.1109/LED.2013.2266111

View details for Web of Science ID 000323911800037
Low-Temperature Monolithic 3-Layer 3-D Process for FPGA IEEE Elec. Dev. Letters Zhang, Z., Chen, C., Y, Crnogorac, F., Chen, S., L., Griffin, P., B., Pease, R., F., Plummer, J. 2013; 34 (8): 1044-1046
Optimal Device Architecture and Hetero-Integration Scheme for III-V CMOS Yuan, Z., Kumar, A., Chen, C., Y., Nainani, A., Griffin, P., Plummer, J. 2013
Si Incorporation From the Seed Into Ge Stripes Crystalized Using Rapid Melt Growth submitted to APL Bai, X., Chen, C., Y., Griffin, P., B., Plummer, J., D. 2013
The Future of the Semiconductor Industry and What Does This Imply for Universities? Plummer, J., D. 2012
Statistical Retardation Delay of I-MOS and Its Measurement Using TDR IEEE ELECTRON DEVICE LETTERS Cho, H., Onal, C., Griffin, P. B., Plummer, J. D. 2011; 32 (2): 206-208

View details for DOI 10.1109/LED.2010.2090491

View details for Web of Science ID 000286677700032
A High-Resolution Low-Power Incremental Sigma Delta ADC With Extended Range for Biosensor Arrays IEEE JOURNAL OF SOLID-STATE CIRCUITS Agah, A., Vleugels, K., Griffin, P. B., Ronaghi, M., Plummer, J. D., Wooley, B. A. 2010; 45 (6): 1099-1110

View details for DOI 10.1109/JSSC.2010.2048493

View details for Web of Science ID 000281763900002
Single-Crystal GaAs and GaSb on Insulator on Bulk Si Substrates Based on Rapid Melt Growth IEEE ELECTRON DEVICE LETTERS Chen, S., Griffin, P. B., Plummer, J. D. 2010; 31 (6): 597-599

View details for DOI 10.1109/LED.2010.2045875

View details for Web of Science ID 000284097800017
High Quality Single-Crystal Laterally Graded SiGe on Insulator by Rapid Melt Growth ELECTROCHEMICAL AND SOLID STATE LETTERS Koh, H. S., Chen, S., Griffin, P. B., Plummer, J. D. 2010; 13 (8): H281-H283

View details for DOI 10.1149/1.3436665

View details for Web of Science ID 000278694500028
Si CMOS – What happens When Scaling Isn’t An Option? Plummer, J., D. 2010
High-Resolution Low-Power Incremental ADC With Extended Range for Biosensor Arrays IEEE Journal of Solid State Circuits Agah, A., A., Vleugels, K., Griffin, P., B., Ronaghi, M., Plummer, J., D., Wooley, B., A.A 2010; 45 (6): 1099-1110
High-quality single-crystal laterally graded SiGe on insulator by rapid melt growth Electrochem. Soc. Solid-State Lett Koh, H., Y. Serene, Chen, S., Griffin, Peter, B., Plummer, James, D. 2010; 13 (8): 281-283
Second generation monolithic full-depletion radiation sensor with integrated CMOS circuitry IEEE Nuclear Science Symposium (NSS)/Medical Imaging Conference (MIC)/17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors Segal, J. D., Kenney, C. J., Parker, S. I., Aw, C. H., Snoeys, W. J., Wooley, B., Plummer, J. D. IEEE. 2010: 1896–1900

View details for Web of Science ID 000306402902010
Negative Differential Resistance Circuit Design and Memory Applications IEEE TRANSACTIONS ON ELECTRON DEVICES Chen, S., Griffin, P. B., Plummer, J. D. 2009; 56 (4): 634-640

View details for DOI 10.1109/TED.2009.2014194

View details for Web of Science ID 000265090100013
A Novel Depletion-IMOS (DIMOS) Device With Improved Reliability and Reduced Operating Voltage IEEE ELECTRON DEVICE LETTERS Onal, C., Woo, R., Koh, H. S., Griffin, P. B., Plummer, J. D. 2009; 30 (1): 64-67

View details for DOI 10.1109/LED.2008.2008029

View details for Web of Science ID 000262364200022
High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts IEEE ELECTRON DEVICE LETTERS Feng, J., Thareja, G., Kobayashi, M., Chen, S., Poon, A., Bai, Y., Griffin, P. B., Wong, S. S., Nishi, Y., Plummer, J. D. 2008; 29 (7): 805-807

View details for DOI 10.1109/LED.2008.2000613

View details for Web of Science ID 000257626000047
Opportunities and Challenges in the Semiconductor Industry Plummer, J., D. 2008
BTBT Transistor Scaling: Can they be Competitive with MOSFETs? 2008 DRC Woo, R., Koh, H., Y. Serene, Onal, C., Griffin, P., B., Plummer, James, D. 2008
P-channel germanium FinFET based on rapid melt growth IEEE ELECTRON DEVICE LETTERS Feng, J., Woo, R., Chen, S., Liu, Y., Griffin, P. B., Plummer, J. D. 2007; 28 (7): 637-639

View details for DOI 10.1109/LED.2007.899329

View details for Web of Science ID 000247643900032
Mechanism of solid phase crystallization of prepatterned nanoscale alpha-Si pillars JOURNAL OF APPLIED PHYSICS Cho, H., Greene, B. J., Hoyt, J. L., Plummer, J. D. 2007; 101 (10)

View details for DOI 10.1063/1.2734531

View details for Web of Science ID 000246891500159
Modeling of surrounding gate MOSFETs with bulk trap states IEEE TRANSACTIONS ON ELECTRON DEVICES Cho, H., Plummer, J. D. 2007; 54 (1): 166-169

View details for DOI 10.1109/TED.2006.887521

View details for Web of Science ID 000243280500024
A High-Resolution Low-Power Oversampling ADC with Extended-Range for Bio-Sensor Arrays Agah, A., Vleugels, K., Griffin, P., B., Ronaghi, M., Plummer, J., D., Wooley, B., A. 2007
A high-resolution low-power oversampling ADC with extended-range for bio-sensor Arrays 20th Symposium on VLSI Circuits Agah, A., Vleugels, K., Griffin, P. B., Rodaghi, M., Plummer, J. D., Wooley, B. A. JAPAN SOCIETY APPLIED PHYSICS. 2007: 244–245

View details for Web of Science ID 000250541000094
Monolithic 3D integrated circuits International Symposium on VLSI Technology, Systems and Applications Wong, S., El-Gamal, A., Griffin, P., Nishi, Y., Pease, F., Plummer, J. IEEE. 2007: 66–69

View details for Web of Science ID 000247059300031
A semiclassical model of dielectric relaxation in glasses JOURNAL OF APPLIED PHYSICS Jameson, J. R., Harrison, W., Griffin, P. B., Plummer, J. D., Nishi, Y. 2006; 100 (12)

View details for DOI 10.1063/1.2397323

View details for Web of Science ID 000243157900069
Integration of germanium-on-insulator and silicon MOSFETs on a silicon substrate IEEE ELECTRON DEVICE LETTERS Feng, J., Liu, Y., Griffin, P. B., Plummer, J. D. 2006; 27 (11): 911-913

View details for DOI 10.1109/LED.2006.883286

View details for Web of Science ID 000241749700013
Charge trapping in high-k gate stacks due to the bilayer structure itself IEEE TRANSACTIONS ON ELECTRON DEVICES Jameson, J. R., Griffin, P. B., Plummer, J. D., Nishi, Y. 2006; 53 (8): 1858-1867

View details for DOI 10.1109/TED.2006.877700

View details for Web of Science ID 000239286700015
Novel Methods for Ultrashallow Low Resistance Junction Formation Jain, S., Griffin, P., B., Plummer, J., D. 2006
Novel Methods for Ultrashallow Low Resistance Junction Formation Jain, S., H., Griffin, P., B., Plummer, J., D. 2006
Novel Methods for Ultrashallow Low Resistance Junction Formation Jain, S., Griffin, P., B., Plummer, J., D. 2006
Low resistance, low-leakage ultrashallow p(+)-junction formation using millisecond flash anneals IEEE TRANSACTIONS ON ELECTRON DEVICES Jain, S. H., Griffin, P. B., Plummer, J. D., McCoy, S., Gelpey, J., Selinger, T., Downey, D. F. 2005; 52 (7): 1610-1615

View details for DOI 10.1109/TED.2005.850621

View details for Web of Science ID 000230123100045
Novel very high IE structures based on the directed BBHE mechanism for ultralow-power flash memories IEEE ELECTRON DEVICE LETTERS Gopalakrishnan, K., Woo, R., Shenoy, R., Jono, Y., Griffin, P. B., Plummer, J. D. 2005; 26 (3): 212-215

View details for DOI 10.1109/LED.2005.843784

View details for Web of Science ID 000227262500029
Critical thickness enhancement of epitaxial SiGe films grown on small structures JOURNAL OF APPLIED PHYSICS Liang, Y., Nix, W. D., Griffin, P. B., Plummer, J. D. 2005; 97 (4)

View details for DOI 10.1063/1.1854204

View details for Web of Science ID 000226841900030
Rapid melt growth of germanium crystals with self-aligned microcrucibles on Si substrates JOURNAL OF THE ELECTROCHEMICAL SOCIETY Liu, Y. C., Deal, M. D., Plummer, J. D. 2005; 152 (8): G688-G693

View details for DOI 10.1149/1.1946368

View details for Web of Science ID 000230494000076
Ni2Si and NiSi formation by low temperature soak and spike RTPs 13th IEEE International Conference on Advanced Thermal Processing of Semiconductor Kim, E. H., Forstner, H., Foad, M., Tam, N., Ramamurthy, S., Griffin, P. B., Plummer, J. D. IEEE. 2005: 177–181

View details for Web of Science ID 000235927800024
Ni2 and NiSi Formation by Low Temperature Soak and Spike RTPs Kim, E., Forstner, H., Foad, M., Tam, N., Ramamurthy, S., Griffin, P., B., Plummer, J. 2005
A Novel SiGe-based Negative Differential Resistance (NDR) Device Liang, Y., Gopalakrishnan, K., Griffin, P., B., Plummer, J., D. 2005
Design requirements for integrated biosensor arrays Conference on Imaging, Manipulation, and Analysis of Biomolecules and Cells - Fundamentals and Applications III Agah, A., Hassibi, A., Plummer, J. D., Griffin, P. B. SPIE-INT SOC OPTICAL ENGINEERING. 2005: 403–413

View details for Web of Science ID 000229039000047
From DRAM to SRAM with a novel SiGe-based negative differential resistance (NDR) device IEEE International Electron Devices Meeting Liang, Y., Gopalakrishnan, K., Griffin, P. B., Plummer, J. D. IEEE. 2005: 979–982

View details for Web of Science ID 000236225100224
Impact ionization MOS (I-MOS) - Part II: Experimental results IEEE TRANSACTIONS ON ELECTRON DEVICES Gopalakrishnan, K., Woo, R., Jungemann, C., Griffin, P. B., Plummer, J. D. 2005; 52 (1): 77-84

View details for DOI 10.1109/TED.2004.841345

View details for Web of Science ID 000225915000012
Impact ionization MOS (I-MOS) - Part I: Device and circuit simulations IEEE TRANSACTIONS ON ELECTRON DEVICES Gopalakrishnan, K., Griffin, P. B., Plummer, J. D. 2005; 52 (1): 69-76

View details for DOI 10.1109/TED.2004.841344

View details for Web of Science ID 000225915000011
Metastable boron active concentrations in Si using flash assisted solid phase epitaxy JOURNAL OF APPLIED PHYSICS Jain, S. H., Griffin, P. B., Plummer, J. D., McCoy, S., Gelpey, J., Selinger, T., Downey, D. F. 2004; 96 (12): 7357-7360

View details for DOI 10.1063/1.1814792

View details for Web of Science ID 000225482400059
Double-well model of dielectric relaxation current APPLIED PHYSICS LETTERS Jameson, J. R., Harrison, W., Griffin, P. B., Plummer, J. D. 2004; 84 (18): 3489-3491

View details for DOI 10.1063/1.1738177

View details for Web of Science ID 000221062500019
Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon JOURNAL OF APPLIED PHYSICS Takamura, Y., Marshall, A. F., Mehta, A., ARTHUR, J., Griffin, P. B., Plummer, J. D., Patel, J. R. 2004; 95 (8): 3968-3976

View details for DOI 10.1063/1.1666975

View details for Web of Science ID 000220586100014
High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates APPLIED PHYSICS LETTERS Liu, Y. C., Deal, M. D., Plummer, J. D. 2004; 84 (14): 2563-2565

View details for DOI 10.1063/1.1691175

View details for Web of Science ID 000220586800031
Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy 7th International Workshop on the Fabrication, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors Liu, F. Y., Griffin, P. B., Plummer, J. D., Lyding, J. W., Moran, J. M., Richards, J. F., Kulig, L. A V S AMER INST PHYSICS. 2004: 422–26

View details for Web of Science ID 000220573800082
High Quality Single-crystal Ge-on-insulator by Liquid-phase Epitaxy on Si Substrates Appl. Phys. Letters Liu, Y., Deal, M., D., Plummer, J., D. 2004; 84 (14): 2563–2565
What’s Hot in Engineering – A Look at the Next 25 years Plummer, J., D. 2004
Silicon-based Devices and Technology for the Nanoscale Era Plummer, J., D. 2004
Low Resistant Contacts to Laser Annealed Junctions Kim, E., Griffin, P., B., Plummer, J., D. 2004
Critical Thickness Enhancement of Epitaxial SiGe Films Grown on Small Structures Liang, Y., Nix, W., D., Griffin, P., B., Plummer, J., D. 2004
CMOS Compatible Liquid-Phase Epitaxial Growth of Ge on Si Substrates Liu, Y., Deal, M., D., Plummer, J., D. 2004
Metastable Active Concentrations in Si Using Flash Assisted Solid Phase Epitaxy J. Appl. Phys. Jain, S., H., Griffin, P., B., Plummer, J., D., McCoy, S., Gelpey, J., Selinger, T. 2004; 96 (12): 7357-7360
MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth 50th IEEE International Electron Devices Meeting Liu, Y. C., Gopalakrishnan, K., Griffin, P. B., Ma, K., Deal, M. D., Plummer, J. D. IEEE. 2004: 1001–1004

View details for Web of Science ID 000227158500231
A multi-enzyme model for pyrosequencing NUCLEIC ACIDS RESEARCH Agah, A., Aghajan, M., Mashayekhi, F., Amini, S., Davis, R. W., Plummer, J. D., Ronaghi, M., Griffin, P. B. 2004; 32 (21)

Abstract

Pyrosequencing is a DNA sequencing technique based on sequencing-by-synthesis enabling rapid real-time sequence determination. This technique employs four enzymatic reactions in a single tube to monitor DNA synthesis. Nucleotides are added iteratively to the reaction and in case of incorporation, pyrophosphate (PPi) is released. PPi triggers a series of reactions resulting in production of light, which is proportional to the amount of DNA and number of incorporated nucleotides. Generated light is detected and recorded by a detector system in the form of a peak signal, which reflects the activity of all four enzymes in the reaction. We have developed simulations to model the kinetics of the enzymes. These simulations provide a full model for the Pyrosequencing four-enzyme system, based on which the peak height and shape can be predicted depending on the concentrations of enzymes and substrates. Simulation results are shown to be compatible with experimental data. Based on these simulations, the rate-limiting steps in the chain can be determined, and K(M) and kcat of all four enzymes in Pyrosequencing can be calculated.

View details for DOI 10.1093/nar/gnh159

View details for Web of Science ID 000225676700001

View details for PubMedID 15576673

View details for PubMedCentralID PMC535692
Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles APPLIED PHYSICS LETTERS Aboy, M., Pelaz, L., Marques, L. A., Barbolla, J., Mokhberi, A., Takamura, Y., Griffin, P. B., Plummer, J. D. 2003; 83 (20): 4166-4168

View details for DOI 10.1063/1.1628391

View details for Web of Science ID 000186523400029
Activation and diffusion studies of ion-implanted p and n dopants in germanium APPLIED PHYSICS LETTERS Chui, C. O., Gopalakrishnan, K., Griffin, P. B., Plummer, J. D., Saraswat, K. C. 2003; 83 (16): 3275-3277

View details for DOI 10.1063/1.1618382

View details for Web of Science ID 000185954400015
Hall measurements of bilayer structures JOURNAL OF APPLIED PHYSICS Jain, S. H., Griffin, P. B., Plummer, J. D. 2003; 93 (2): 1060-1063

View details for DOI 10.1063/1.1529093

View details for Web of Science ID 000180134200039
Atomistic modeling of B activation and deactivation for ultra-shallow junction formation IEEE International Conference on Simulation of Semiconductor Processes and Devices Aboy, M., Pelaz, L., Marques, L. A., Barbolla, J., Mokhberi, A., Takamura, Y., Griffin, P. B., Plummer, J. D. IEEE. 2003: 151–154

View details for Web of Science ID 000185660800037
Carrier Profiling via STM/STS; Comparison with SCM and SIMS Liu, F., Y., Griffin, P., B., Plummer, J., D., Lyding, J., W, Morse, J., M., Richards, J., F. 2003
School of Engineering Strategic Initiatives E-DAY Keynote Plummer, J., D. 2003
Stress effects on nanocrystal formation by Ni-induced crystallization of amorphous Si Symposium on Amorphous and Nanocrystalline Silicon-Based Films held at the 2003 MRS Spring Meeting Liu, Y. C., Deal, M. D., Sultana, M., Plummer, J. D. MATERIALS RESEARCH SOCIETY. 2003: 669–673

View details for Web of Science ID 000187620100102
Problems with metal-oxide high-K dielectrics due to 1/t dielectric relaxation current in amorphous materials IEEE International Electron Devices Meeting Jameson, J. R., Griffin, P. B., Agah, A., Plummer, J. D., Kim, H. S., Taylor, D. V., McIntyre, P. C., Harrison, W. A. IEEE. 2003: 91–94

View details for Web of Science ID 000189158800020
The use of laser annealing to reduce parasitic series resistances in MOS devices 14th International Conference on Ion Implantation Technology Takamura, Y., Kim, E. H., Jain, S. H., Griffin, P. B., Plummer, J. D. IEEE. 2003: 56–59

View details for Web of Science ID 000189388900014
Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si APPLIED PHYSICS LETTERS Liu, Y. C., Deal, M. D., Saraswat, K. C., Plummer, J. D. 2002; 81 (24): 4634-4636

View details for DOI 10.1063/1.1527977

View details for Web of Science ID 000179611800046
Impact of lateral source/drain abruptness on device performance IEEE TRANSACTIONS ON ELECTRON DEVICES Kwong, M. Y., Kasnavi, R., Griffin, P., Plummer, J. D., DUTTON, R. W. 2002; 49 (11): 1882-1890

View details for DOI 10.1109/TED.2002.806790

View details for Web of Science ID 000179694200006
Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy study JOURNAL OF APPLIED PHYSICS Takamura, Y., Vailionis, A., Marshall, A. F., Griffin, P. B., Plummer, J. D. 2002; 92 (9): 5503-5507

View details for DOI 10.1063/1.1510953

View details for Web of Science ID 000178767200099
Silicon orientation effects in the initial regime of wet oxidation JOURNAL OF THE ELECTROCHEMICAL SOCIETY Ngau, J. L., Griffin, P. B., Plummer, J. D. 2002; 149 (8): F98-F101

View details for DOI 10.1149/1.1491986

View details for Web of Science ID 000176815100048
Physical processes associated with the deactivation of dopants in laser annealed silicon JOURNAL OF APPLIED PHYSICS Takamura, Y., Griffin, P. B., Plummer, J. D. 2002; 92 (1): 235-244

View details for DOI 10.1063/1.1481974

View details for Web of Science ID 000176314800039
A comparative study of dopant activation in boron, BF2, arsenic, and phosphorus implanted silicon IEEE TRANSACTIONS ON ELECTRON DEVICES Mokhberi, A., Griffin, P. B., Plummer, J. D., Paton, E., McCoy, S., Elliott, K. 2002; 49 (7): 1183-1191

View details for Web of Science ID 000176532900013
Thermal stability of dopants in laser annealed silicon JOURNAL OF APPLIED PHYSICS Takamura, Y., Jain, S. H., Griffin, P. B., Plummer, J. D. 2002; 92 (1): 230-234

View details for DOI 10.1063/1.1481975

View details for Web of Science ID 000176314800038
Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si APPLIED PHYSICS LETTERS Mokhberi, A., Kasnavi, R., Griffin, P. B., Plummer, J. D. 2002; 80 (19): 3530-3532

View details for DOI 10.1063/1.1479458

View details for Web of Science ID 000175464100022
Atomic-scale diffusion mechanisms via intermediate species PHYSICAL REVIEW B Ural, A., Griffin, P. B., Plummer, J. D. 2002; 65 (13)

View details for DOI 10.1103/PhysRevB.65.134303

View details for Web of Science ID 000174903900073
A physics based approach to ultra-shallow p(+)-junction formation at the 32nm node IEEE International Electron Devices Meeting Mokhberi, A., Pelaz, L., Aboy, M., Marves, L., Barbolla, J., Paton, E., McCoy, S., Ross, J., Elliott, K., Gelpey, J., Griffin, P. B., Plummer, J. D. IEEE. 2002: 879–882

View details for Web of Science ID 000185143400202
Thermal Stability of Laser Annealed Dopants in Silicon J. Appl. Physics Takamura, Y., Jain, S., Griffin, P., B., Plummer, J., D. 2002; 92: 230
Miniaturized DNA Analysis Devices Griffin, P., Agah, A., Plummer, J., D., Eltoukhy, P., H., Salama, K., Gamal, A., El 2002
Dopant Deactivation in Heavily Sb Doped Si (001): High Resolution X-ray Diffraction Study Takamura, Y., Vailionis, A., Griffin, P., B., Plummer, J., D. 2002
A Study of the Deactivation of High Concentration, Laser Annealed Dopant Profiles in Silicon Ngau, J., L., Griffin, P., B., Plummer, J., D. 2002
The local structure of antimony in high dose antimony implants in silicon by XAFS and SIMS Symposium on Silicon Front-End Junction Formation Technologies held at the MRS Spring Meeting Sahiner, M. A., Novak, S. W., Woicik, J. C., Takamura, Y., Griffin, P. B., Plummer, J. D. MATERIALS RESEARCH SOCIETY. 2002: 121–127

View details for Web of Science ID 000178750600016
I-MOS: A novel semiconductor device with a subthreshold slope lower than kT/q IEEE International Electron Devices Meeting Gopalakrishnan, K., Griffin, P. B., Plummer, J. D. IEEE. 2002: 289–292

View details for Web of Science ID 000185143400066
Silicon self-diffusion under extrinsic conditions APPLIED PHYSICS LETTERS Ural, A., Griffin, P. B., Plummer, J. D. 2001; 79 (26): 4328-4330

View details for Web of Science ID 000172815100020
Increased hot-carrier effects using SiGe layers in vertical surrounding-gate MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES Date, C. K., Plummer, J. D. 2001; 48 (12): 2690-2694

View details for Web of Science ID 000173259700006
Suppression of the floating-body effect using SiGe layers in vertical surrounding-gate MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES Date, C. K., Plummer, J. D. 2001; 48 (12): 2684-2689

View details for Web of Science ID 000173259700005
Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation JOURNAL OF APPLIED PHYSICS Ngau, J. L., Griffin, P. B., Plummer, J. D. 2001; 90 (4): 1768-1778

View details for Web of Science ID 000170223200016
Study of the effect of grain boundary migration on hillock formation in Al thin films JOURNAL OF APPLIED PHYSICS Kim, D. K., Nix, W. D., Vinci, R. P., Deal, M. D., Plummer, J. D. 2001; 90 (2): 781-788

View details for Web of Science ID 000169660000035
Material and process limits in silicon VLSI technology PROCEEDINGS OF THE IEEE Plummer, J. D., Griffin, P. B. 2001; 89 (3): 240-258

View details for Web of Science ID 000167927300003
Characterization of profiling techniques for ultralow energy arsenic implants ELECTROCHEMICAL AND SOLID STATE LETTERS Kasnavi, R., Sun, Y., Mount, G., Pianetta, P., Griffin, P. B., Plummer, J. D. 2001; 4 (1): G1-G3

View details for Web of Science ID 000165499200010
Ultrashallow, Low Resistivity Junctions in MOS Devices Takamura, Y., Jain, S., Griffin, P., B., Plummer, J., D. 2001
Perspectives on the Past, Present and Future of the Semiconductor Industry Plummer, J., D. 2001
Issues In Ultra Shallow Junction Fabrication: Dopant Activation and Defect Kinetics Plummer, J., D. 2001
Challenges in Characterization and Formation of Ultra Shallow Junctions Using Arsenic Implants Kasnavi, R., Griffin, P., B., Plummer, J., D. 2001
Electronic Structure and Properties of Tetrahedral Hafnium and Zirconium Silicates Jameson, J., R, Harrison, W., A., Griffin, P., B., Plummer, J., D. 2001
Complete Model for Carbon Suppression of Boron Transient Enhanced Diffusion in Silicon Ngau, J., L., Griffin, P., B., Plummer, J., D. 2001
Material and Process Limits in Silicon VLSI Technology Plummer, J., D., Griffin, P., B. 2001
Modeling of the Time Evolution of Carbon Diffusion and Suppression of Boron Transient Enhanced Diffusion in SiGeC and SiC J. Appl. Physics Ngau, J., L., Griffin, P., B., Plummer, J., D. 2001; 90 (4): 1768–1779
Transparent probe test structure for electrical and physical characterization of defects in thin films JOURNAL OF THE ELECTROCHEMICAL SOCIETY Tringe, J. W., Deal, M. D., Plummer, J. D. 2000; 147 (12): 4633-4638

View details for Web of Science ID 000165469800041
Ural, griffin, and plummer reply: Physical review letters Ural, Griffin, PLUMMER 2000; 85 (22): 4836-?

View details for PubMedID 11082665
Comment on "Self-diffusion in silicon: Similarity between the properties of native point defects" - Ural, Griffin, and Plummer reply PHYSICAL REVIEW LETTERS Ural, A., Griffin, P. B., Plummer, J. D. 2000; 85 (22): 4836-4836

View details for Web of Science ID 000165556600049
Hydrogen passivation in plasma-etched polycrystalline silicon resistors ELECTROCHEMICAL AND SOLID STATE LETTERS Tringe, J. W., Deal, M. D., Plummer, J. D. 2000; 3 (11): 517-519

View details for Web of Science ID 000089277100008
A diffraction-based transmission electron microscope technique for measuring average grain size ELECTROCHEMICAL AND SOLID STATE LETTERS Tringe, J. W., Deal, M. D., Plummer, J. D. 2000; 3 (11): 520-523

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Microstructure of thermal hillocks on blanket Al thin films THIN SOLID FILMS Kim, D., Heiland, B., Nix, W. D., Arzt, E., Deal, M. D., Plummer, J. D. 2000; 371 (1-2): 278-282

View details for Web of Science ID 000088276200043
Creep-controlled diffusional hillock formation in blanket aluminum thin films as a mechanism of stress relaxation JOURNAL OF MATERIALS RESEARCH Kim, D., Nix, W. D., Deal, M. D., Plummer, J. D. 2000; 15 (8): 1709-1718

View details for Web of Science ID 000088588800011
Electrical and structural properties of polycrystalline silicon JOURNAL OF APPLIED PHYSICS Tringe, J. W., Plummer, J. D. 2000; 87 (11): 7913-7926

View details for Web of Science ID 000087067400048
Characterization of arsenic dose loss at the Si/SiO2 interface JOURNAL OF APPLIED PHYSICS Kasnavi, R., Sun, Y., Mo, R., Pianetta, P., Griffin, P. B., Plummer, J. D. 2000; 87 (5): 2255-2260

View details for Web of Science ID 000085529500030
Ultra low energy arsenic implant limits on sheet resistance and junction depth 20th Symposium on VLSI Technology Kasnavi, R., Griffin, P. B., Plummer, J. D. IEEE. 2000: 112–113

View details for Web of Science ID 000088359300044
On a Novel Technique for the Electrical Characterization of Polycrystalline Silicon Ionescu, A., M., Tringe, J., Chovet, A., Plummer, J., D. 2000
Limits of Scaling Shallow Junctions Using Ultra Low Energy Arsenic Implants Kasnavi, R., Griffin, P., B., Plummer, J., D. 2000
A Comparative Study of Dose Loss for B11 and BF2 Implants Kasnavi, R., Griffin, P., B., Plummer, J., D. 2000
50-nm Vertical Replacement-Gate (VRG) pMOSFETs Oh, S., H., Authors, 2., Plummer, J., D. 2000
What Does Silicon Self-diffusion Tell Us About Ultra-shallow Junctions Ural, A., Koh, S., H., Griffin, P., B., Plummer, J., D. 2000
Silicon VLSI Technology – Fundamentals, Practice and Modeling Plummer, J., D., Deal, M., D., Griffin, P., B. Prentice Hall, Upper Saddle River, NJ. 2000
Pseudo-Mos Operation of Ultra-Narrow Polysilicon Wires: Electrical Characterization and Memory Effects Anghel, C., Hefyene, N., Ionescu, A., M., Tringe, J., Plummer, J., D. 2000
Coupled Diffusion of Dopants Ural, A., Griffin, P., B., Plummer, J., D. 2000
Silicon MOSFETs (Conventional and Non-Traditional) at the Scaling Limit Plummer, J., D. 2000
Modeling and Fabrication of Vertical Pillar MOSFETs made in Recrystallized Si Cho, H., J., Plummer, J., D. 2000
Kinetics of boron activation International Conference on Simulation of Semiconductor Processes and Devices Mokhberi, A., Griffin, P. B., Plummer, J. D. IEEE. 2000: 163–166

View details for Web of Science ID 000166421700040
Diffusional hillock formation in Al thin films controlled by creep Symposium V on Thin Films-Stresses and Mechanical Properties VIII held at the 1999 MRS Fall Meeting Kim, D. K., Nix, W. D., Arzt, E., Deal, M. D., Plummer, J. D. MATERIALS RESEARCH SOCIETY. 2000: 129–134

View details for Web of Science ID 000165506400021
SiGe heterojunctions in epitaxial vertical surrounding-gate MOSFETs 20th Symposium on VLSI Technology Date, C. K., Plummer, J. D. IEEE. 2000: 36–37

View details for Web of Science ID 000088359300014
Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures 20th International Conference on Defects in Semiconductors (ICDS-20) Ural, A., Griffin, P. B., Plummer, J. D. ELSEVIER SCIENCE BV. 1999: 512–515

View details for Web of Science ID 000084452200120
Self-diffusion in silicon: Similarity between the properties of native point defects PHYSICAL REVIEW LETTERS Ural, A., Griffin, P. B., Plummer, J. D. 1999; 83 (17): 3454-3457

View details for Web of Science ID 000083242800027
Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon JOURNAL OF APPLIED PHYSICS Ural, A., Griffin, P. B., Plummer, J. D. 1999; 85 (9): 6440-6446

View details for Web of Science ID 000079871200024
Lattice compression of Si crystals and crystallographic position of As impurities measured with x-ray standing wave spectroscopy JOURNAL OF APPLIED PHYSICS Herrera-Gomez, A., Rousseau, P. M., Woicik, J. C., Kendelewicz, T., Plummer, J., SPICER, W. E. 1999; 85 (3): 1429-1437

View details for Web of Science ID 000078137100022
A Self-Aligned Split-Gate Pillar Flash EEPROM Cell Hayashi, F., Plummer, J., D. 1999
Two-dimensional dopant diffusion study using scanning capacitance microscopy Symposium on Si Front-End Processing-Physics and Technology of Dopant-Defect Interactions Yu, G. Y., Griffin, P. B., Plummer, J. D. MATERIALS RESEARCH SOCIETY. 1999: 233–237

View details for Web of Science ID 000082188100034
Diffusional Hillock Formation in Al Thin Films Controlled by Creep Kim, D., K., Nix, W., D, Arzi, E., Deal, M., Plummer, J., D. 1999
Thermal Conduction in Doped Single-Crystal Silicon Films Asheghi, M., Kurabayashi, K., Goodson, K., E., Kasnavi, R., Plummer, J., D. 1999
A Novel Thryristor-based SRAM Cell (T-RAM) for High-Speed, Low Voltage Giga-scale Memories Nemati, F., Plummer, J., D. 1999
High Performance Fully and Partially Depleted Poly-Si Surround Gate Transistors Cho, H., J., Plummer, J., D. 1999
Two-Dimensional Dopant Diffusion and Activation Study Using Scanning Capacitance Microscopy Yu, G., M., Griffin, P., B., Plummer, J., D. 1999
Interdisciplinary Research - Examples From the Silicon Chip World Plummer, J., D. 1999
Biomedical Applications of MEMS and Nanotechnologies Plummer, J., D. 1999
A simple model for threshold voltage of surrounding-gate MOSFET's IEEE TRANSACTIONS ON ELECTRON DEVICES Auth, C. P., Plummer, J. D. 1998; 45 (11): 2381-2383

View details for Web of Science ID 000076754800020
Arsenic deactivation enhanced diffusion: A time, temperature, and concentration study JOURNAL OF APPLIED PHYSICS Rousseau, P. M., Griffin, P. B., Fang, W. T., Plummer, J. D. 1998; 84 (7): 3593-3601

View details for Web of Science ID 000076184800020
Lateral IGBT in thin SOI for high voltage, high speed power IC IEEE TRANSACTIONS ON ELECTRON DEVICES Leung, Y. K., Paul, A. K., Plummer, J. D., Wong, S. S. 1998; 45 (10): 2251-2254

View details for Web of Science ID 000076221300024
Experimental evidence for a dual vacancy interstitial mechanism of self-diffusion in silicon APPLIED PHYSICS LETTERS Ural, A., Griffin, P. B., Plummer, J. D. 1998; 73 (12): 1706-1708

View details for Web of Science ID 000075993800034
A new structure for controlling dark current due to surface generation in drift detectors NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT Segal, J. D., Patt, B. E., Iwanczyk, J. S., Vilkelis, G., Plummer, J. D., Hedman, B., Hodgson, K. O. 1998; 414 (2-3): 307-316

View details for Web of Science ID 000076090100019
A vertical high voltage termination structure for high-resistivity silicon detectors 1997 Nuclear Science Symposium Segal, J. D., Kenney, C. J., Aw, C. H., Parker, S. I., Vilkelis, G., Iwanczyk, J. S., Patt, B. E., Plummer, J. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1998: 364–69

View details for Web of Science ID 000074161200027
Characterization of arsenic dose loss at the Si/SiO2 interface using high resolution X-ray Photoelectron Spectrometry International Electron Devices Meeting (IEDM) Kasnavi, R., Pianetta, P., Sun, Y., Mo, R. N., Griffin, P. B., Plummer, J. D. IEEE. 1998: 721–724

View details for Web of Science ID 000078581800166
Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs 24th IEEE International Symposium on Compound Semiconductors Massengale, A. R., Tai, C. Y., Deal, M. D., Plummer, J. D., Harris, J. S. I E E E. 1998: 329–332

View details for Web of Science ID 000075543900078
Validation of two-dimensional implant and diffusion profiles using novel scanning capacitance microscope sample preparation and deconvolution techniques International Electron Devices Meeting (IEDM) Yu, G. Y., Griffin, P. B., Plummer, J. D. IEEE. 1998: 717–720

View details for Web of Science ID 000078581800165
The National Nanofabrication Users Network - Sharing Hi-Tech Facilities to Stimulate New Applications of Silicon Technology Plummer, J., D. 1998
Computer Simulation Of Silicon Technology Plummer, J., D. 1998
A Novel High Density, Low Voltage SRAM Cell with a Vertical NDR Device Nemati, F., Plummer, J., D. 1998
Point Defect Based Modeling of Dopant Diffusion and Transient Enhanced Diffusion in Silicon Plummer, J., D. 1998
Validation of Two-Dimensional Implant and Diffusion Profiles Using Novel Scanning Capacitance Microscope Sample Preparation and Deconvolution Techniques Yu, G., M., Griffin, P., B., Plummer, J., D. 1998
Dynamics of Arsenic Dose Loss at the SiO2 Interface During TED Kasnavi, R., Griffin, P., B., Plummer, J., D. 1998
Semiconductor Industry-University Collaboration and Impacts on Education - A University Perspective Plummer, J., D. 1998
Dynamics of Arsenic Dose Loss at the SiO2 Interface Kasnavi, R., Griffin, P., B., Plummer, J., D. 1998
Atomic and Molecular Physics Needs for Designing and Manufacturing Silicon Integrated Circuits Plummer, J., D. 1998
A Novel Pillar DRAM Cell for 4Gbit and Beyond Cho, H., J., Nemati, F., Griffin, P., B., Plummer, J., D. 1998
Silicon Technology and Devices for the 21st Century Plummer, J., D. 1998
Effects of PECVD deposition fluxes on the spatial variation of thin film density of as-deposited SiO2 films in interconnect structures International Interconnect Technology Conference Lee, K., Deal, M., McVittie, J., Plummer, J., Saraswat, K. I E E E. 1998: 175–177

View details for Web of Science ID 000075220300048
Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs 24th IEEE International Symposium on Compound Semiconductors Massengale, A. R., Tai, C. Y., Deal, M. D., Plummer, J. D., Harris, J. S. IOP PUBLISHING LTD. 1998: 329–332

View details for Web of Science ID 000074779700078
A vertical high voltage termination structure for high-resistivity silicon detectors 1997 IEEE Nuclear Science Symposium and Medical Imaging Conference Segal, J. D., Kenney, C. J., Aw, C. H., Parker, S. I., Vilkelis, G., Iwanczyk, J. S., Patt, B. E., Plummer, J. IEEE. 1998: 299–303

View details for Web of Science ID 000074401900063
Heating mechanisms of LDMOS and LIGBT in ultrathin SOI IEEE ELECTRON DEVICE LETTERS Leung, Y. K., Paul, A. K., Goodson, K. E., Plummer, J. D., Wong, S. S. 1997; 18 (9): 414-416

View details for Web of Science ID A1997XR89300004
A test structure advisor and a coupled, library-based test structure layout and testing environment IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Kumar, M. V., Lukaszek, W., Plummer, J. D. 1997; 10 (3): 370-383

View details for Web of Science ID A1997XN83900005
Nitrogen-doped poly spacer local oxidation IEEE ELECTRON DEVICE LETTERS Huang, S. F., Griffin, P. B., RISSMAN, P., Plummer, J. D. 1997; 18 (7): 346-348

View details for Web of Science ID A1997XG99700013
Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs ELECTRONICS LETTERS Massengale, A. R., Ueda, T., Harris, J. S., Tai, C. Y., Deal, M. D., Plummer, J. D., Fernandez, R. 1997; 33 (12): 1087-1089

View details for Web of Science ID 000072040800062
Applied bias slewing in transient Wigner function simulation of resonant tunneling diodes IEEE TRANSACTIONS ON ELECTRON DEVICES Biegel, B. A., Plummer, J. D. 1997; 44 (5): 733-737

View details for Web of Science ID A1997WV64800008
Diffusion modeling of zinc implanted into GaAs JOURNAL OF APPLIED PHYSICS Chase, M. P., Deal, M. D., Plummer, J. D. 1997; 81 (4): 1670-1676

View details for Web of Science ID A1997WH33900010
Arsenic deactivation enhanced diffusion and the reverse short-channel effect IEEE ELECTRON DEVICE LETTERS Rousseau, P. M., CROWDER, S. W., Griffin, P. B., Plummer, J. D. 1997; 18 (2): 42-44

View details for Web of Science ID A1997WD27400004
Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's IEEE ELECTRON DEVICE LETTERS Auth, C. P., Plummer, J. D. 1997; 18 (2): 74-76

View details for Web of Science ID A1997WD27400015
Design and characterization of SiGe TFT devices and process using Stanford's test chip design environment 1997 IEEE International Conference on Microelectronic Test Structures Kumar, M. V., Subramanian, V., Saraswat, K. C., Plummer, J. D., Lukaszek, W. I E E E. 1997: 143–145

View details for Web of Science ID A1997BH73B00029
Cross sectional TEM sample preparation using e-beam lithography and reactive ion etching Symposium on Specimen Preparation for Transmission Electron Microscopy of Materials IV Cho, H. J., Griffin, P. B., Plummer, J. D. MATERIALS RESEARCH SOCIETY. 1997: 217–224

View details for Web of Science ID A1997BJ94J00021
Silicon TED Process Simulation - What’s Possible Today and What Will Be Needed Tomorrow? Plummer, J., D. 1997
Defects and Diffusion Issues for The Manufacturing of Semiconductors in the 21st Century Plummer, J., D. 1997
The Influence of Amorphizing Implants on Boron Transient Enhanced Diffusion in Silicon Chao, H., S., Griffin, P., B., Plummer, J., D. 1997
Cross-sectional TEM Sample Preparation Using E-beam Lithography and Reactive Ion Etching Cho, H., J., Griffin, P., B., Plummer, J., D. 1997
Process Modeling For 21st Century Silicon Devices Plummer, J., D. 1997
The influence of amorphizing implants on boron diffusion in silicon Symposium on Defects and Diffusion in Silicon Processing Chao, H. S., Griffin, P. B., Plummer, J. D. MATERIALS RESEARCH SOCIETY. 1997: 347–352

View details for Web of Science ID 000071462300047
Simulation of charge cloud evolution in silicon drift detectors 1996 IEEE Nuclear Science Symposium and Medical Imaging Conference Segal, J., Plummer, J., Kenney, C. IEEE. 1997: 558–562

View details for Web of Science ID A1997BH59W00122
Modeling of Al/Ga interdiffusion in AlAs/GaAs superlattice materials 26th State of the Art Program on Compound Semiconductors (SOTAPOCS XXVI) at the 191st Meeting of the Electrochemical-Society Tai, C. Y., Deal, M. D., Plummer, J. D. ELECTROCHEMICAL SOCIETY INC. 1997: 120–28

View details for Web of Science ID A1997BH73D00015
Diffusion of implanted zinc in GaAs and AlxGa1-xAs modeled with the kick-out mechanism 26th State of the Art Program on Compound Semiconductors (SOTAPOCS XXVI) at the 191st Meeting of the Electrochemical-Society Chase, M. P., Deal, M. D., Plummer, J. D. ELECTROCHEMICAL SOCIETY INC. 1997: 111–19

View details for Web of Science ID A1997BH73D00014
Modeling stress effects on thin oxide growth kinetics 1997 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 97) Huang, S. F., Griffin, P. B., Plummer, J. D., RISSMAN, P. I E E E. 1997: 49–52

View details for Web of Science ID A1997BJ53T00012
Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI IEEE ELECTRON DEVICE LETTERS Leung, Y. K., Kuehne, S. C., Huang, V. S., Nguyen, C. T., Paul, A. K., Plummer, J. D., Wong, S. S. 1997; 18 (1): 13-15

View details for Web of Science ID A1997VZ12900005
A model for mobility degradation in highly doped arsenic layers IEEE TRANSACTIONS ON ELECTRON DEVICES Rousseau, P. M., Griffin, P. B., Luning, S., Plummer, J. D. 1996; 43 (11): 2025-2027

View details for Web of Science ID A1996VR35600038
Simulation and modelling of a new silicon X-ray drift detector design for synchrotron radiation applications 9th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray Detectors, Associated Electronics and Applications Iwanczyk, J. S., Patt, B. E., Segal, J., Plummer, J., Vilkelis, G., Hedman, B., Hodgson, K. O., Cox, A. D., Rehn, L., Metz, J. ELSEVIER SCIENCE BV. 1996: 288–94

View details for Web of Science ID A1996VW52700065
The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 degrees C APPLIED PHYSICS LETTERS Chao, H. S., Griffin, P. B., Plummer, J. D., Rafferty, C. S. 1996; 69 (14): 2113-2115

View details for Web of Science ID A1996VJ78300042
Comparison of self-consistency iteration options for the Wigner function method of quantum device simulation PHYSICAL REVIEW B Biegel, B. A., Plummer, J. D. 1996; 54 (11): 8070-8082

View details for Web of Science ID A1996VL14500075
Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon APPLIED PHYSICS LETTERS Chao, H. S., Griffin, P. B., Plummer, J. D. 1996; 68 (25): 3570-3572

View details for Web of Science ID A1996UR15300016
Evolution of the crystallographic position of As impurities in heavily doped Si crystals as their electrical activity changes APPLIED PHYSICS LETTERS HERRERAGOMEZ, A., Rousseau, P. M., Materlik, G., Kendelewicz, T., Woicik, J. C., Griffin, P. B., Plummer, J., SPICER, W. E. 1996; 68 (22): 3090-3092

View details for Web of Science ID A1996UM64300010
Surface and bulk point defect generation in Czochralski and float zone type silicon wafers APPLIED PHYSICS LETTERS Fang, W. T., Fang, T. T., Griffin, P. B., Plummer, J. D. 1996; 68 (15): 2085-2087

View details for Web of Science ID A1996UD97400018
Enhanced diffusion by electrical deactivation of arsenic and its implications for bipolar devices IEEE TRANSACTIONS ON ELECTRON DEVICES Rousseau, P. M., Griffin, P. B., Kuehne, S. C., Plummer, J. D. 1996; 43 (4): 547-553

View details for Web of Science ID A1996UC51100006
Species and dose dependence of ion implantation damage induced transient enhanced diffusion JOURNAL OF APPLIED PHYSICS Chao, H. S., CROWDER, S. W., Griffin, P. B., Plummer, J. D. 1996; 79 (5): 2352-2363

View details for Web of Science ID A1996TY11900028
Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2 APPLIED PHYSICS LETTERS Fang, T. T., Fang, W. T., Griffin, P. B., Plummer, J. D. 1996; 68 (6): 791-793

View details for Web of Science ID A1996TT66300022
A test structure advisor and a coupled, library-based test structure layout and testing environment 1996 IEEE International Conference on Microelectronic Test Structures (ICMTS 1996) Kumar, M. V., Plummer, J. D., Lukaszek, W. IEEE. 1996: 201–205

View details for Web of Science ID A1996BG12J00036
0.18um dual Vt MOSFET process and energy-delay measurement 1996 International Electron Devices Meeting Chen, Z. J., Diaz, C., Plummer, J. D., Cao, M., Greene, W. IEEE. 1996: 851–854

View details for Web of Science ID A1996BG98F00191
TCAD - The Semiconductor Industry Roadmap and a Path to the Future Plummer, J., D. 1996
Modeling Stress Effects on Thin Oxides for Trench Isolation Huang, S., F., Griffin, P., B., Plummer, J., D. 1996
0.18µm Dual Vt MOSFET Process and Energy-Delay Measurement Chen, Z., Diaz, C., Plummer, J., D., Cao, M., Greene, W. 1996
Temperature Ramp Rate Dependence of Transient Enhanced Dopant Diffusion Perozziello, E., A., Griffin, P., B., Plummer, J., D. 1996
Short Anneal Time Behavior of Transient Enhanced Diffusion Chao, H., S., Rafferty, C., S., Griffin, P., B., Plummer, J., D. 1996
Physical modeling of transient enhanced diffusion in silicon 4th International Symposium on Process Physics and Modeling in Semiconductor Technology Griffin, P. B., Plummer, J. D. ELECTROCHEMICAL SOCIETY INC. 1996: 101–15

View details for Web of Science ID A1996BJ91Q00011
The Effects of Source/Drain Processing on the Reverse Short Channel Effect of Deep Submicron Bulk and SOI MOSFETs Crowder, S., Rousseau, P., Snyder, J., Scott, J., Plummer, J. 1996
Silicon Oxidation Kinetics - From Deal-Grove to VLSI Process Models Plummer, J., D. 1996
Physical Modeling of Transient Enhanced Diffusion in Silicon Griffin, P., B., Plummer, J., D. 1996
A Test Structure Advisor and a Coupled, Library-Based Test Structure Layout and Testing Environment Kumar, M., V., Plummer, J., D., Lukaszek, W. 1996
High voltage, high speed lateral IGBT in thin SOI for power IC 1996 IEEE International SOI Conference Leung, Y. K., Kuehne, S. C., Huang, V. S., Nguyen, C. T., Paul, A. K., Plummer, J. D., Wong, S. S. IEEE. 1996: 132–133

View details for Web of Science ID A1996BG49M00065
Nitridation enhanced diffusion of antimony in bulk and silicon-on-insulator material 4th International Symposium on Process Physics and Modeling in Semiconductor Technology CROWDER, S. W., Griffin, P. B., Plummer, J. D. ELECTROCHEMICAL SOCIETY INC. 1996: 54–63

View details for Web of Science ID A1996BJ91Q00006
Vertical, fully-depleted, surrounding gate MOSFETs on sub-0.1 mu m thick silicon pillars 54th Annual Device Research Conference Auth, C. P., Plummer, J. D. IEEE. 1996: 108–109

View details for Web of Science ID A1996BG23Q00042
High voltage LDMOS transistors in sub-micron SOI films 8th International Symposium on Power Semiconductor Devices and PCs (ISPSD 96) Paul, A. K., Leung, Y. K., Plummer, J. D., Wong, S. S., Kuehne, S. C., Huang, V. S., Nguyen, C. T. I E E E. 1996: 89–92

View details for Web of Science ID A1996BF73Z00012
VACANCY GENERATION RESULTING FROM ELECTRICAL DEACTIVATION OF ARSENIC APPLIED PHYSICS LETTERS LAWTHER, D. W., Myler, U., Simpson, P. J., Rousseau, P. M., Griffin, P. B., Plummer, J. D. 1995; 67 (24): 3575-3577

View details for Web of Science ID A1995TJ30400019
PERFORMANCE OF THE 3-D PENCIL FLASH EPROM CELL AND MEMORY ARRAY IEEE TRANSACTIONS ON ELECTRON DEVICES PEIN, H., Plummer, J. D. 1995; 42 (11): 1982-1991

View details for Web of Science ID A1995TB57900017
MODELING THE DIFFUSION OF GROWN-IN BE IN MOLECULAR-BEAM EPITAXY GAAS JOURNAL OF APPLIED PHYSICS Hu, J. C., Deal, M. D., Plummer, J. D. 1995; 78 (3): 1595-1605

View details for Web of Science ID A1995RK57600032
MODELING THE DIFFUSION OF IMPLANTED BE IN GAAS JOURNAL OF APPLIED PHYSICS Hu, J. C., Deal, M. D., Plummer, J. D. 1995; 78 (3): 1606-1613

View details for Web of Science ID A1995RK57600033
CHALLENGES FOR PREDICTIVE PROCESS SIMULATION IN SUB 0.1 MU-M SILICON DEVICES 2nd International Conference on Computer Simulation of Radiation Effects in Solids Plummer, J. D., Griffin, P. B. ELSEVIER SCIENCE BV. 1995: 160–66

View details for Web of Science ID A1995RR77700031
STUDY ON HYDROGENATION OF POLYSILICON THIN-FILM TRANSISTORS BY ION-IMPLANTATION IEEE TRANSACTIONS ON ELECTRON DEVICES Cao, M., Zhao, T. M., Saraswat, K. C., Plummer, J. D. 1995; 42 (6): 1134-1140

View details for Web of Science ID A1995QZ20000017
Optimization of quarter micron MOSFETs for low voltage low power applications 1995 International Electron Devices Meeting Chen, Z. J., Burr, J., Shott, J., Plummer, J. D. IEEE. 1995: 63–66

View details for Web of Science ID A1995BF10D00012
Incorporating Point-Defect Dynamics into Process Simulation Plummer, J., D. 1995
Computational Prototyping For 21st Century Semiconductor Devices Plummer, J., D. 1995
Transient Enhanced Diffusion During Implant Damage Annealing Plummer, J., D. 1995
Challenges For Predictive Process Simulation in Sub 0.1 Micron Silicon Devices Plummer, J., D., Griffin, P., B. 1995
Computational Prototyping for 21st Century Structures Invited Talk, Sematech, Austin TX Plummer, J., D. 1995
Physically Based Process Simulation for Submicron Silicon Devices Plummer, J., D. 1995
Computational Prototyping for Advanced Semiconductor Structures Plummer, J., D. 1995
Optimization of Quarter Micron MOSFETs for Low Voltage/Low Power Applications Chen, Z., Burr, J., Shott, J., Plummer, J., D. 1995
Computational Prototyping for Advanced Semiconductor Devices Plummer, J., D. 1995
Computational Prototyping for 21st Century Structures Plummer, J., D. 1995
''The effect of source/drain processing on the reverse short channel effect of deep sub-micron bulk and SOI NMOSFETs'' 1995 International Electron Devices Meeting CROWDER, S. W., Rousseau, P. M., Snyder, J. P., Scott, J. A., Griffin, P. B., Plummer, J. D. IEEE. 1995: 427–430

View details for Web of Science ID A1995BF10D00095
Technology CAD - Status and Future Possibilities Plummer, J., D. 1995
Low Threshold Voltage Quarter Micron MOSFETs for Low Power Applications Chen, Z., Plummer, J., D. 1995
Modeling the Diffusion of Grown-in Be in MBE GaAs J. Appl. Physics Hu, J., C., Deal, M., D., Plummer, J., D. 1995; 78 (3): 1595-1605
Implant enhanced diffusion of boron in silicon germanium Symposium on Strained Layer Epitaxy-Materials, Processing, and Device Applications Fang, W. T., Griffin, P. B., Plummer, J. D. MATERIALS RESEARCH SOC. 1995: 379–384

View details for Web of Science ID A1995BE33N00058
DISPERSION OF MOS CAPACITANCE-VOLTAGE CHARACTERISTICS RESULTING FROM THE RANDOM CHANNEL DOPANT ION DISTRIBUTION IEEE TRANSACTIONS ON ELECTRON DEVICES WATT, J. T., Plummer, J. D. 1994; 41 (11): 2222-2232

View details for Web of Science ID A1994PT16000042
A VERTICAL SUBMICRON POLYSILICON THIN-FILM-TRANSISTOR USING A LOW-TEMPERATURE PROCESS IEEE ELECTRON DEVICE LETTERS Zhao, T. M., Cao, M., Saraswat, K. C., Plummer, J. D. 1994; 15 (10): 415-417

View details for Web of Science ID A1994PL26900015
CHARACTERIZATION OF INTERFACE TOPOGRAPHY OF THE BURIED SI-SIO2 INTERFACE IN SILICON-ON-INSULATOR MATERIAL BY ATOMIC-FORCE MICROSCOPY APPLIED PHYSICS LETTERS CROWDER, S. W., Griffin, P. B., Plummer, J. D. 1994; 65 (13): 1698-1699

View details for Web of Science ID A1994PH33200032
EFFECT OF BURIED SI-SIO2 INTERFACES ON OXIDATION AND IMPLANT-ENHANCED DOPANT DIFFUSION IN THIN SILICON-ON-INSULATOR FILMS JOURNAL OF APPLIED PHYSICS CROWDER, S. W., Hsieh, C. J., Griffin, P. B., Plummer, J. D. 1994; 76 (5): 2756-2764

View details for Web of Science ID A1994PD44000027
A SIMPLE EEPROM CELL USING TWIN POLYSILICON THIN-FILM TRANSISTORS IEEE ELECTRON DEVICE LETTERS Cao, M., Zhao, T. M., Saraswat, K. C., Plummer, J. D. 1994; 15 (8): 304-306

View details for Web of Science ID A1994PB03100014
ELECTRICAL DEACTIVATION OF ARSENIC AS A SOURCE OF POINT-DEFECTS APPLIED PHYSICS LETTERS Rousseau, P. M., Griffin, P. B., Plummer, J. D. 1994; 65 (5): 578-580

View details for Web of Science ID A1994PA15300022
OXIDATION ENHANCED DOPANT DIFFUSION IN SEPARATION BY IMPLANTATION BY OXYGEN SILICON-ON-INSULATOR MATERIAL APPLIED PHYSICS LETTERS CROWDER, S. W., Griffin, P. B., Hsieh, C. J., Wei, G. Y., Plummer, J. D., Allen, L. P. 1994; 64 (24): 3264-3266

View details for Web of Science ID A1994NQ97900021
PIN DETECTOR ARRAYS AND INTEGRATED READOUT CIRCUITRY ON HIGH-RESISTIVITY FLOAT-ZONE SILICON IEEE TRANSACTIONS ON ELECTRON DEVICES Snoeys, W., Plummer, J. D., Parker, S., Kenney, C. 1994; 41 (6): 903-912

View details for Web of Science ID A1994NR95500007
PARASITIC BIPOLAR GAIN IN FULLY DEPLETED N-CHANNEL SOI MOSFETS IEEE TRANSACTIONS ON ELECTRON DEVICES VERPLOEG, E. P., Nguyen, C. T., Wong, S. S., Plummer, J. D. 1994; 41 (6): 970-977

View details for Web of Science ID A1994NR95500017
HIGH-MOBILITY SI1-XGEX PMOS TRANSISTORS TO 5K 1st European Workshop on Low Temperature Electronics (WOLTE 1) Scott, J. A., Croke, E. T., Plummer, J. D. EDITIONS PHYSIQUE. 1994: 69–74

View details for Web of Science ID A1994NU91400012
MEASUREMENT OF SUBSTRATE CURRENT IN SOI MOSFETS IEEE ELECTRON DEVICE LETTERS Nguyen, C. T., VERPLOEG, E. P., Kuehne, S. C., Plummer, J. D., Wong, S. S., Renteln, P. 1994; 15 (4): 132-134

View details for Web of Science ID A1994NK10700006
OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN HEAVILY-DOPED LAYERS IN SILICON JOURNAL OF THE ELECTROCHEMICAL SOCIETY Roth, D. J., Plummer, J. D. 1994; 141 (4): 1074-1081

View details for Web of Science ID A1994NF41000045
A PROTOTYPE MONOLITHIC PIXEL DETECTOR 1st International Symposium on Development and Application of Semiconductor Tracking Detectors (Hiroshima STD Symposium) Kenney, C. J., Parker, S. I., Peterson, V. Z., Snoeys, W. J., Plummer, J. D., Aw, C. H. ELSEVIER SCIENCE BV. 1994: 59–77

View details for Web of Science ID A1994NB21500010
DOPING AND DAMAGE DOSE DEPENDENCE OF IMPLANT INDUCED TRANSIENT ENHANCED DIFFUSION BELOW THE AMORPHIZATION THRESHOLD APPLIED PHYSICS LETTERS Griffin, P. B., Lever, R. F., Packan, P. A., Plummer, J. D. 1994; 64 (10): 1242-1244

View details for Web of Science ID A1994MZ17100023
INVESTIGATION OF BODY EFFECT OF FULLY DEPLETED N-CHANNEL SOI DEVICE AS A FUNCTION OF BODY BIAS 1994 IEEE International SOI Conference Chen, Z. J., PLOEG, E. V., Shott, J., Plummer, J. D. IEEE. 1994: 57–58

View details for Web of Science ID A1990BD41Z00028
The Effect of Buried Si-SiO2 Interfaces on Oxidation and Implant Enhanced Dopant Diffusion in Thin Silicon-on-Insulator Films J. Appl. Phys Crowder, S., W., Hsieh, C., J., Griffin, P., B., Plummer, J., D. 1994; 76: 2756
A Comparison of Implant Enhanced Dopant Diffusion in Bulk and SOI Material Crowder, S., W., Griffin, P., B., Plummer, J., D. 1994
High Mobility Si1-xGex PMOS Transistors to 5K 1st European Workshop on Low Temperature Electronics, WOLTE 1, Grenoble France, June 1994. Also published Journal de Physique IV, Colloque C6, supplement to Journal de Physique III Scott, J., Croke, E., T., Plummer, J., D. 1994; 4
Oxidation Enhanced Diffusion in Separation by Implantation of Oxygen Silicon-on-Insulator Material Appl. Phys. Letters Crowder, S., W., Griffin, P., B., Hsieh, C., J., Wei, G., Y., Plummer, J., D., Allen, L., P. 1994; 64 (24): 3264-3266
SOI - Power ICs, VLSI Devices and Process Technology Issues Plummer, J., D. 1994
CMOS Technology Scaling for Low Voltage, Low Power Applications Chen, Z., Shott, J., Burr, J., Plummer, J., D. 1994
Challenges For Predictive Process Simulation in Sub 0.1 Micron Silicon Devices Plummer, J., D. 1994
A Twin Polysilicon TFT Planar EEPROM Cell Zhao, T., Cao, M., Plummer, J., D., Saraswat, K., C. 1994
Doping and Damage Dependence of Implant Induced Transient Enhanced Diffusion Below the Amorphization Threshold Appl. Phys. Lett. Griffin, P., B., Lever, R., F., Packan, P., A., Plummer, J., D. 1994; 64: 1242-1244
A TRENCH-GATE LIGBT STRUCTURE AND 2 LMCT STRUCTURES IN SOI SUBSTRATES 6th International Symposium on Power Semiconductor Devices and ICs (ISPSD 94) DISNEY, D. R., PEIN, H. B., Plummer, J. D. I E E E. 1994: 405–410

View details for Web of Science ID A1994BB75B00068
DEVICE IMPLICATIONS OF ENHANCED DIFFUSION CAUSED BY THE ELECTRICAL DEACTIVATION OF ARSENIC 1994 IEEE International Electron Devices Meeting Rousseau, P. M., Griffin, P. B., Kuehne, S. C., Plummer, J. D. IEEE. 1994: 861–864

View details for Web of Science ID A1994BC55U00196
IIA-5 1ST DIRECT BETA-MEASUREMENT FOR PARASITIC LATERAL BIPOLAR-TRANSISTORS IN FULLY-DEPLETED SOI MOSFETS PLOEG, E. V., Nguyen, C., KISTLER, N., Wong, S., Woo, J., Plummer, J. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1993: 2101–2

View details for Web of Science ID A1993ME78300040
A 3-D SIDEWALL FLASH EPROM CELL AND MEMORY ARRAY PEIN, H., Plummer, J. D. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1993: 2126–27

View details for Web of Science ID A1993ME78300080
A NEW MOSFET OUTPUT CONDUCTANCE MEASUREMENT TECHNIQUE IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT Akram, M. F., Plummer, J. D., SHOTT, J. D. 1993; 42 (5): 893-898

View details for Web of Science ID A1993MC21600003
A 3-D SIDEWALL FLASH EPROM CELL AND MEMORY ARRAY IEEE ELECTRON DEVICE LETTERS PEIN, H., Plummer, J. D. 1993; 14 (8): 415-417

View details for Web of Science ID A1993LQ00900016
SILICON INTERSTITIAL ABSORPTION DURING THERMAL-OXIDATION AT 900 DEGREES-C BY EXTENDED DEFECTS FORMED VIA SILICON IMPLANTATION APPLIED PHYSICS LETTERS Roth, D. J., Huang, R. Y., Plummer, J. D., DUTTON, R. W. 1993; 62 (20): 2498-2500

View details for Web of Science ID A1993LB88500014
PERFORMANCE OF A MONOLITHIC PIXEL DETECTOR 3RD INTERNATIONAL CONF ON ADVANCED TECHNOLOGY AND PARTICLE PHYSICS Kenney, C., Parker, S., Snoeys, W., Plummer, J., ROSSEEL, G., Aw, C. H. ELSEVIER SCIENCE BV. 1993: 460–467

View details for Web of Science ID A1993LF47300058
1ST BEAM TEST-RESULTS FROM A MONOLITHIC SILICON PIXEL DETECTOR 6TH EUROPEAN SYMP ON SEMICONDUCTOR DETECTORS Snoeys, W., Plummer, J., ROSSEEL, G., Aw, C. H., Kenney, C., Parker, S. ELSEVIER SCIENCE BV. 1993: 144–49

View details for Web of Science ID A1993KP97200021
DESIGN AND ANALYSIS OF A NEW CONDUCTIVITY-MODULATED POWER MOSFET IEEE TRANSACTIONS ON ELECTRON DEVICES Liu, D. K., Plummer, J. D. 1993; 40 (2): 428-438

View details for Web of Science ID A1993KJ10800029
DEVELOPMENT OF ANIMATED SIMULATION OF SEMICONDUCTOR ELECTRONIC DEVICES FOR CLASSROOM DEMONSTRATION International Conference on Simulation in Engineering Education (ICSEE 94)/1994 Western Multiconference CHANGHASNAIN, C. J., Plummer, J. D., DUTTON, R. W., Yu, Z. P. SOC COMPUTER SIMULATION INT. 1993: 67–72

View details for Web of Science ID A1993BA76V00012
A Novel Floating Gate Spacer Polysilicon TFT Zhao, T., Cao, M., Plummer, J., D., Saraswat, K., C. 1993
Hydrogenation of Polycrystalline Si TFTs by Ion Implantation Cao, M., Zhao, T., Saraswat, K., C., Plummer, J., D. 1993
Evidence for a Kickout Mechanism for Ge Diffusion in Si Perozziello, E., A., Griffin, P., B., Plummer, J., D. 1993
A Novel Vertical Polysilicon Memory Device Zhao, T., Plummer, J., D. 1993
The Role of Extended Defects in Dopant Diffusion Huang, R., Y. S., Roth, D., J., Plummer, J., D., Dutton, R., W. 1993
Simulating Complex Process Sequences in Semiconductors, Particularly Silicon Plummer, J., D. 1993
Process Simulation in Submicron Silicon Structures Plummer, J., D. 1993
A Novel Vertical Submicron Polysilicon TFT Zhao, T., Plummer, J., D. 1993
Performance of the 3-D Sidewall Flash EPROM Cell Pein, H., Plummer, J., D. 1993
Oxidation Enhanced Diffusion in Thin SOI Films Crowder, S., W., Griffin, P., B., Plummer, J., D. 1993
Experimental Characterization of Arsenic Segregation Behavior in the Poly/Single-Crystal Silicon System Luning, S., Plummer, J., D. 1993
First Direct Measurement for Parasitic Lateral Bipolar Transistors in Fully Depleted SOI MOSFETs VerPloeg, E., Nguyen, C., Kistler, N., Wong, S., Woo, J., Plummer, J., D. 1993
A Parametric Design Tool for Device Space Exploration Wong, W., Yang, D., Plummer, J., D., Dutton, R., W. 1993
Oxidation Enhanced Diffusion of Boron and Phosphorus in Heavily Doped Layers in Silicon Roth, D., J., Plummer, J. 1993
Instruction and Prototyping Using the Virtual Factory Plummer, J., D. 1993
First Beam Test Results from a Monolithic Silicon Pixel Detector Snoeys, W., Plummer, J., Rosseel, G., Aw, C., H., Kenney, C., Parker, S. 1993
LATERAL DEPLETION-MODE THYRISTORS IN SOI SUBSTRATES 5th International Symp on Power Semiconductor Devices and IC(S) ( ISPSD 93 ) DISNEY, D. R., Plummer, J. D. I E E E. 1993: 269–273

View details for Web of Science ID A1993BY87C00046
SOI LIGBT DEVICES WITH A DUAL P-WELL IMPLANT FOR IMPROVED LATCHING CHARACTERISTICS 5th International Symp on Power Semiconductor Devices and IC(S) ( ISPSD 93 ) DISNEY, D. R., Plummer, J. D. I E E E. 1993: 254–258

View details for Web of Science ID A1993BY87C00043
2-D Current Flow Effects in Bipolar Transistors at Cryogenic Temperature Weybright, M., E., Plummer, J., D. 1993
Species, Dose and Energy Dependence of Implant Induced Transient Enhanced Diffusion Griffin, P., B., Lever, R., F., Kennel, H., W., Packan, P., A., Plummer, J., D. 1993
Modeling the Diffusion Behavior of Implanted Beryllium in Gaalium Arsenide Using SUPREM-IV Hu, C., J., Deal, M., D., Robinson, H., G., Plummer, J., D. 1993
Activation and Deactivation of High Concentration Arsenic with Some Evidence of Precipitation Rousseau, P., M., Griffin, P., B., Carey, P., G., Plummer, J., D. 1993
A Simple SPICE Level-3 Model For Polysilicon TFT DC ON-Current Zhao, T., Plummer, J., D. 1993
A Virtual Factory-Based Environment for Semiconductor Device Development Invited Paper, SEMICON/Europa'93, Geneva Switzerland Wong, W., Pan, J., Plummer, J. 1993
BREAKDOWN VOLTAGE OF SUBMICRON MOSFETS IN FULLY DEPLETED SOI CONF ON MICROELECTRONICS MANUFACTURING AND RELIABILITY KISTLER, N., PLOEG, E., Woo, J., Plummer, J. SPIE - INT SOC OPTICAL ENGINEERING. 1993: 202–212

View details for Web of Science ID A1993BX93T00020
PROGRAMMABLE FACTORY FOR ADAPTABLE IC MANUFACTURING 1993 SYMP ON VERY-LARGE-SCALE-INTEGRATION ( VLSI ) TECHNOLOGY Saraswat, K. C., Wood, S. C., Plummer, J. D., Losleben, P. JAPAN SOC APPLIED PHYSICS. 1993: 131–132

View details for Web of Science ID A1993BZ20V00066
USE OF LOW-TEMPERATURE SI MBE GROWTH TECHNIQUES FOR HIGH-PERFORMANCE SIGE/SI ELECTRONICS SYMP ON SEMICONDUCTOR HETEROSTRUCTURES FOR PHOTONIC AND ELECTRONIC APPLICATIONS, AT THE 1992 FALL MEETING OF THE MATERIALS RESEARCH SOC Croke, E. T., HARRELL, M. J., MIERZWINSKI, M. E., Plummer, J. D. MATERIALS RESEARCH SOC. 1993: 415–420

View details for Web of Science ID A1993BY84H00061
A NEW INTEGRATED PIXEL DETECTOR FOR HIGH-ENERGY PHYSICS 1991 NUCLEAR SCIENCE SYMP AND MEDICAL IMAGING CONF ( NSS / MIUC ) Snoeys, W., Plummer, J., Parker, S., Kenney, C. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1992: 1263–69

View details for Web of Science ID A1992JZ68400013
GEXSI1-X/SILICON INVERSION-BASE TRANSISTORS - EXPERIMENTAL DEMONSTRATION IEEE TRANSACTIONS ON ELECTRON DEVICES Taft, R. C., Plummer, J. D., Iyer, S. S. 1992; 39 (9): 2119-2126

View details for Web of Science ID A1992JJ51600019
GEXSI1-X/SILICON INVERSION-BASE TRANSISTORS - THEORY OF OPERATION IEEE TRANSACTIONS ON ELECTRON DEVICES Taft, R. C., Plummer, J. D. 1992; 39 (9): 2108-2118

View details for Web of Science ID A1992JJ51600018
THE FIELD-ASSISTED TURN-OFF THYRISTOR - A REGENERATIVE DEVICE WITH VOLTAGE-CONTROLLED TURN-OFF IEEE TRANSACTIONS ON ELECTRON DEVICES Petti, C. J., Plummer, J. D. 1992; 39 (8): 1946-1953

View details for Web of Science ID A1992JD66000024
RETARDED DIFFUSION OF SB IN A HIGH-CONCENTRATION AS BACKGROUND DURING SILICON OXIDATION APPLIED PHYSICS LETTERS PEROZZIELLO, E. A., Griffin, P. B., Plummer, J. D. 1992; 61 (3): 303-305

View details for Web of Science ID A1992JE52400021
SUB-QUARTER-MICROMETER CMOS ON ULTRATHIN (400 ANGSTROM) SOI IEEE ELECTRON DEVICE LETTERS KISTLER, N., VERPLOEG, E., Woo, J., Plummer, J. 1992; 13 (5): 235-237

View details for Web of Science ID A1992HQ60500003
MODELING UPHILL DIFFUSION OF MG IMPLANTS IN GAAS USING SUPREM-IV JOURNAL OF APPLIED PHYSICS Robinson, H. G., Deal, M. D., Amaratunga, G., Griffin, P. B., Stevenson, D. A., Plummer, J. D. 1992; 71 (6): 2615-2623

View details for Web of Science ID A1992HJ65500021
OXYHEMOGLOBIN SATURATION FOLLOWING ELECTIVE ABDOMINAL-SURGERY IN PATIENTS RECEIVING CONTINUOUS INTRAVENOUS-INFUSION OR INTRAMUSCULAR MORPHINE ANALGESIA ANAESTHESIA Kluger, M. T., Owen, H., Watson, D., Ilsley, A. H., Baldwin, A. M., FRONSKO, R. R., Plummer, J. L., Brose, W. G. 1992; 47 (3): 256-260

Abstract

Oxygen saturation was continuously measured using computerised pulse oximetry for 8 h overnight pre-operatively and for the first 24 h postoperatively in 40 patients receiving intermittent intramuscular morphine or continuous infusion of morphine following elective upper abdominal surgery. The proportion of time with an oxygen saturation less than 94% was used as an index of desaturation. Patients receiving continuous infusion analgesia received a larger morphine dose and achieved better analgesia than the intramuscular group. Postoperatively, the duration of desaturation increased 10-fold over pre-operative values, 'intramuscular' patients spending 39.0% (SD, 37.0%) and 'continuous infusion' patients 40.0% (SD, 37.5%) of the time below 94% saturation. Although newer therapies (e.g. epidural analgesia and patient-controlled analgesia) are currently receiving greater attention, the sequelae of these more traditional analgesic techniques warrant further study.

View details for Web of Science ID A1992HH73600017

View details for PubMedID 1566997
1ST RESULTS FROM AN INTEGRATED PIXEL DETECTOR JOINT INTERNATIONAL LEPTON-PHOTON SYMP / EUROPHYSICS CONF ON HIGH ENERGY PHYSICS Parker, S., Kenney, C., Snoeys, W., Plummer, J. WORLD SCIENTIFIC PUBL CO PTE LTD. 1992: A232–A235

View details for Web of Science ID A1992BW68C00062
Fast Switching LIGT Devices in SOI Substrates Disney, D., R., Plummer, J., D. 1992
A Virtual Factory-Based Environment for Semiconductor Device Development Wong, W., T., Pan, J., Plummer, J., D. 1992
Kinetics of High Concentration Arsenic Deactivation at Moderate to Low Temperatures Luning, S., Rouseau, P., M., Griffin, P., B., Carey, P., G., Plummer, J., D. 1992
Elimination of Bipolar-Induced Breakdown in Fully-Depleted SOI MOSFETs VerPloeg, E., P., Watanabe, T., Kistler, N., A, Woo, J., C. S., Plummer, J., D. 1992
Dependence of Fully Depleted SOI MOSFET Breakdown Voltage on Film Thickness and Channel Length Kistler, N., VerPloeg, E., Woo, J., Plummer, J., D. 1992
Sub-Quarter Micron CMOS on Ultra-Thin (400Å) SOI IEEE Elec. Dev. Letters Kistler, N., VerPloeg, E., Woo, J., Plummer, J. 1992; 13 (5): 235-237
Thermal Oxidation Kinetics and LOCOS Isolation in SOI Materials Crowder, S., Griffin, P., Plummer, J., D. 1992
AC Characterization and Modeling of the GexSi1-x/Si BICFET Mierzwinski, M., E., Plummer, J., D., Croke, E., T., Iyer, S., S., Harrell, M., J. 1992
A Virtual Factory-Based Environment for Semiconductor Device Development Wong, W., Pan, J., Plummer, J. 1992
TOOL INTEGRATION FOR POWER DEVICE MODELING INCLUDING 3D ASPECTS INTERNATIONAL SYMP ON POWER SEMICONDUCTOR DEVICES AND CIRCUITS DUTTON, R. W., Plummer, J. D. PLENUM PRESS DIV PLENUM PUBLISHING CORP. 1992: 111–138

View details for Web of Science ID A1992BY09R00005
THE SUPERLATTICE DIFFUSION PROBE - A TOOL FOR MODELING DIFFUSION IN III-V SEMICONDUCTORS SYMP ON ADVANCED III-V-COMPOUND SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE, AT THE 1991 MEETING OF THE MATERIALS RESEARCH SOC Allen, E. L., Pass, C. J., Deal, M. D., Plummer, J. D., CHIA, V. F. MATERIALS RESEARCH SOC. 1992: 709–714

View details for Web of Science ID A1992BW39A00106
SUPPRESSION OF AL-GA INTERDIFFUSION BY A WNX FILM ON AN ALXGA1-XAS/ALAS SUPERLATTICE STRUCTURE APPLIED PHYSICS LETTERS Allen, E. L., Pass, C. J., Deal, M. D., Plummer, J. D., CHIA, V. F. 1991; 59 (25): 3252-3254

View details for Web of Science ID A1991GV07900017
DEVICE PHYSICS AND TECHNOLOGY OF COMPLEMENTARY SILICON MESFETS FOR VLSI APPLICATIONS IEEE TRANSACTIONS ON ELECTRON DEVICES MACWILLIAMS, K. P., Plummer, J. D. 1991; 38 (12): 2619-2631

View details for Web of Science ID A1991GP30000006
EXTENDED DEFECTS OF ION-IMPLANTED GAAS JOURNAL OF APPLIED PHYSICS Jones, K. S., Allen, E. L., Robinson, H. G., Stevenson, D. A., Deal, M. D., Plummer, J. D. 1991; 70 (11): 6790-6795

View details for Web of Science ID A1991GU04900021
A NEW DEVICE STRUCTURE AND PROCESS FLOW FOR A LOW-LEAKAGE P-I-N DIODE-BASED INTEGRATED DETECTOR ARRAY Snoeys, W., Plummer, J., Parker, S., Kenney, C. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1991: 2696–97

View details for Web of Science ID A1991GP30000034
MERGED BICMOS LOGIC TO EXTEND THE CMOS BICMOS PERFORMANCE CROSSOVER BELOW 2.5-V SUPPLY IEEE JOURNAL OF SOLID-STATE CIRCUITS RITTS, R. B., RAJE, P. A., Plummer, J. D., Saraswat, K. C., CHAM, K. M. 1991; 26 (11): 1606-1614

View details for Web of Science ID A1991GL70900019
A COMPARISON OF THE DIFFUSION BEHAVIOR OF ION-IMPLANTED SN, GE, AND SI IN GALLIUM-ARSENIDE JOURNAL OF THE ELECTROCHEMICAL SOCIETY Allen, E. L., Murray, J. J., Deal, M. D., Plummer, J. D., Jones, K. S., RUBART, W. S. 1991; 138 (11): 3440-3449

View details for Web of Science ID A1991GN90900050
AN 8-TERMINAL KELVIN-TAPPED BIPOLAR-TRANSISTOR FOR EXTRACTING PARASITIC SERIES RESISTANCES IEEE TRANSACTIONS ON ELECTRON DEVICES Taft, R. C., Plummer, J. D. 1991; 38 (9): 2139-2154

View details for Web of Science ID A1991FZ27400026
3-AMINO-2,3-DIDEOXY-D-ERYTHRO-FURANOSE DERIVATIVES TETRAHEDRON Cheng, M. C., Kim, K., Lin, Y. T., Plummer, J. S., Talhouk, J., Wang, Y., You, T. P., Mosher, H. S. 1991; 47 (27): 4861-4868

View details for Web of Science ID A1991FT53800004
MODELING ACTIVATION OF IMPLANTED SI IN GAAS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Vanasupa, L. S., Deal, M. D., Plummer, J. D. 1991; 138 (7): 2134-2140

View details for Web of Science ID A1991FW34100049
ON H-PASSIVATION OF SI DONORS IN GAAS ANNEALED WITH PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE CAPS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Vanasupa, L. S., Deal, M. D., Plummer, J. D. 1991; 138 (3): 870-871

View details for Web of Science ID A1991FA23600044
MBICMOS - COMPLEX LOGIC AND MODIFIED GATES FOR IMPROVED PERFORMANCE 1991 MEETING ON BIPOLAR CIRCUITS AND TECHNOLOGY RITTS, R. B., Plummer, J. D. I E E E. 1991: 210–213

View details for Web of Science ID A1991BU64B00043
Consistent Models for Point Defects in Silicon Griffin, P., B., Packan, P., A., Plummer, J., D. 1991
A New Integrated Pixel Detector for High Energy Physics Snoeys, W., Plummer, J., D., Parker, S., Kenney, C. 1991
Process Physics in Submicron VLSI Devices Plummer, J., D. 1991
MBiCMOS: A Device and Circuit Technique Scalable to Sub-Micron, Sub-2V Regime Raje, P., Ritts, R., Cham, K., Plummer, J., Saraswat, K. 1991
The Superlattice Disordering Probe: A Tool for Modeling Diffusion in III-V Semiconductors Allen, E., L., Pass, C., J., Deal, M., D., Plummer, J., D., Chia, V., K. F. 1991
The Superlattice Disordering Probe: A Tool for Modeling Diffusion in GaAs Allen, E., L., Pass, C., J., Deal, M., D., Plummer, J., D., Chia, V., K. F. 1991
First Results from an Integrated Pixel Detector Parker, S., Kenney, C., Snoeys, W., Plummer, J., D. 1991
Bipolar Transistor Modeling Over Temperature Weybright, M., E., Plummer, J., D. 1991
A NEW INTEGRATED PIXEL DETECTOR FOR HIGH-ENERGY PHYSICS 1991 IEEE NUCLEAR SCIENCE SYMP AND MEDICAL IMAGING CONF Snoeys, W., Plummer, J., Parker, S., Kenney, C. I E E E. 1991: 457–460

View details for Web of Science ID A1991BW12R00085
TEMPERATURE AND TIME-DEPENDENCE OF B-DIFFUSION AND P-DIFFUSION IN SI DURING SURFACE OXIDATION JOURNAL OF APPLIED PHYSICS Packan, P. A., Plummer, J. D. 1990; 68 (8): 4327-4329

View details for Web of Science ID A1990EE60900082
THE COMPLEMENTARY INSULATED-GATE BIPOLAR-TRANSISTOR (CIGBT) - A NEW POWER SWITCHING DEVICE IEEE ELECTRON DEVICE LETTERS Boisvert, D. M., Plummer, J. D. 1990; 11 (9): 368-370

View details for Web of Science ID A1990DV76600004
TRANSIENT DIFFUSION OF LOW-CONCENTRATION-B IN SI DUE TO SI-29 IMPLANTATION DAMAGE APPLIED PHYSICS LETTERS Packan, P. A., Plummer, J. D. 1990; 56 (18): 1787-1789

View details for Web of Science ID A1990DB07100026
THE EFFECT OF BACKGROUND DOPING AND DOSE ON DIFFUSION OF ION-IMPLANTED TIN IN GALLIUM-ARSENIDE JOURNAL OF APPLIED PHYSICS Allen, E. L., Deal, M. D., Plummer, J. D. 1990; 67 (7): 3311-3314

View details for Web of Science ID A1990CV63900014
REDUCTION OF LATERAL PHOSPHORUS DIFFUSION IN CMOS NORMAL-WELLS IEEE TRANSACTIONS ON ELECTRON DEVICES Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A. 1990; 37 (3): 806-807

View details for Web of Science ID A1990CR84400039
DIFFUSION OF ION-IMPLANTED TIN IN GALLIUM-ARSENIDE SYMP AT THE 1989 FALL MEETING OF THE MATERIALS RESEARCH SOC : IMPURITIES,DEFECTS, AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES Allen, E. L., Deal, M. D., Plummer, J. D. MATERIALS RESEARCH SOC. 1990: 685–689

View details for Web of Science ID A1990BR53C00110
Diffusion of Ion-Implanted Group IV Atoms in Gallium Arsenide Allen, E., L., Murray, J., J., Deal, M., D., Plummer, J., D., Jones, K., S., Rubart, W., S. 1990
A Novel DC Measurement Method for the Accurate Extraction of Bipolar Resistive Parasitics Taft, R., C., Plummer, J., D. 1990
A Model For Si Activation in GaAs Vanasupa, L., S., Deal, M., D., Plummer, J., D. 1990
Variations in Point Defect Concentrations Associated with Oxygen Precipitation in Czochralski Silicon Kennel, H., W., Plummer, J., D. 1990
Etching, Deposition, Diffusion and Oxidation Models in SUPREM IV Huang, R., Aum, P., Griffin, P., Plummer, J., Dutton, R. 1990
Complementary Merged BiCMOS with Vertical PNP Ritts, R., B., Plummer, J., D. 1990
Bipolar Transistor Modeling Over Temperature Weybright, M., E., Plummer, J., D. 1990
Transient and Small-Signal Modeling of the GexSi1-x/Si BICFET Mierzwinski, M., E., Taft, R., C., Plummer, J., D. 1990
Process and Device Modeling Plummer, J., D. 1990
Radiation Tolerant Complementary Silicon MESFETs for VLSI Applications IEEE Nuclear and Space Radiation Effects Conference, Reno Nevada. Also IEEE Transactions on Nuclear Science MacWilliams, K., P., Scott, D., M., Plummer, J., D. 1990
THE EFFECT OF INTERCONNECTION RESISTANCE ON THE PERFORMANCE ENHANCEMENT OF LIQUID-NITROGEN-COOLED CMOS CIRCUITS IEEE TRANSACTIONS ON ELECTRON DEVICES WATT, J. T., Plummer, J. D. 1989; 36 (8): 1510-1520

View details for Web of Science ID A1989AF21600014
EFFECTS OF STRESS ON THE ELECTRICAL ACTIVATION OF IMPLANTED SI IN GAAS APPLIED PHYSICS LETTERS Vanasupa, L. S., Deal, M. D., Plummer, J. D. 1989; 55 (3): 274-276

View details for Web of Science ID A1989AF18000023
VACANCY SUPERSATURATION IN SI UNDER SIO2 CAUSED BY SIO FORMATION DURING ANNEALING IN AR JOURNAL OF APPLIED PHYSICS Ahn, S. T., Kennel, H. W., Tiller, W. A., Plummer, J. D. 1989; 65 (8): 2957-2963

View details for Web of Science ID A1989T892200012
POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON REVIEWS OF MODERN PHYSICS FAHEY, P. M., Griffin, P. B., Plummer, J. D. 1989; 61 (2): 289-384

View details for Web of Science ID A1989U100300004
DEMONSTRATION OF A P-CHANNEL BICFET IN THE GEXSI1-X/SI SYSTEM IEEE ELECTRON DEVICE LETTERS Taft, R. C., Plummer, J. D., Iyer, S. S. 1989; 10 (1): 14-16

View details for Web of Science ID A1989R604400005
Dielectric Isolation of Silicon through SEG/ELO in Trenches Boisvert, D., M., Plummer, J., D., Borland, J., O. 1989
Process Simulation for High Performance Bipolar and BiCMOS Devices Plummer, J., D., Griffin, P., B. 1989
Point Defects and Dopant Diffusion in Silicon Fahey, P., M., Griffin, P., B., Plummer, J., D. 1989
Microelectronics After 30 Years - Is There Still Room for Innovation? Plummer, J., D. 1989
Hole Mobilities in GexSi1-x/Si Strain-Layer Quantum Wells Taft, R., C., Plummer, J., D., Iyer, S., S. 1989
ADVANCED HETEROJUNCTION GEXSI1-X/SI BIPOLAR-DEVICES 1989 INTERNATIONAL ELECTRON DEVICES MEETING Taft, R. C., Plummer, J. D., Iyer, S. S. I E E E, ELECTRON DEVICES SOC & RELIABILITY GROUP. 1989: 655–658

View details for Web of Science ID A1989BQ39F00150
A CLOSED-FORM ANALYSIS OF FT FOR THE BIPOLAR-TRANSISTOR DOWN TO LIQUID-NITROGEN TEMPERATURE 1989 INTERNATIONAL ELECTRON DEVICES MEETING Tamba, N., WEYBRIGHT, M. E., SHOTT, J. D., Plummer, J. D. I E E E, ELECTRON DEVICES SOC & RELIABILITY GROUP. 1989: 807–810

View details for Web of Science ID A1989BQ39F00185
CHARACTERIZATION OF SURFACE MOBILITY IN MOS STRUCTURES CONTAINING INTERFACIAL CESIUM IONS IEEE TRANSACTIONS ON ELECTRON DEVICES WATT, J. T., FISHBEIN, B. J., Plummer, J. D. 1989; 36 (1): 96-100

View details for Web of Science ID A1989R447000016
DEVICE PHYSICS AND OPTIMIZATION OF CONDUCTIVITY-MODULATED POWER MOSFETS Liu, D. K., Plummer, J. D. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1988: 2457–58

View details for Web of Science ID A1988R026300121
SURFACE-POTENTIAL FLUCTUATIONS IN MOS DEVICES INDUCED BY THE RANDOM DISTRIBUTION OF CHANNEL DOPANT IONS WATT, J. T., Plummer, J. D. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1988: 2431–31

View details for Web of Science ID A1988R026300057
FILM STRESS-RELATED VACANCY SUPERSATURATION IN SILICON UNDER LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE FILMS JOURNAL OF APPLIED PHYSICS Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A. 1988; 64 (10): 4914-4919

View details for Web of Science ID A1988Q971300017
ENHANCED SB DIFFUSION IN SI UNDER THERMAL SI3N4 FILMS DURING ANNEALING IN AR APPLIED PHYSICS LETTERS Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A. 1988; 53 (17): 1593-1595

View details for Web of Science ID A1988Q621100007
CIRCUIT APPROACHES TO INCREASING IGBT SWITCHING SPEED IEEE JOURNAL OF SOLID-STATE CIRCUITS Boisvert, D. M., Liu, D. K., Plummer, J. D. 1988; 23 (5): 1276-1279

View details for Web of Science ID A1988Q243900039
OPTIMIZATION OF SILICON BIPOLAR-TRANSISTORS FOR HIGH-CURRENT GAIN AT LOW-TEMPERATURES IEEE TRANSACTIONS ON ELECTRON DEVICES Woo, J. C., Plummer, J. D. 1988; 35 (8): 1311-1321

View details for Web of Science ID A1988P433100016
VACANCY GENERATION AT THE SI/SIO2 INTERFACE CAUSED BY SIO FORMATION Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A. ELECTROCHEMICAL SOC INC. 1988: C362–C362

View details for Web of Science ID A1988P675200286
A LOW ION ENERGY TRENCH ETCH PROCESS FOR POWER MOS APPLICATIONS Petti, C. J., McVittie, J. P., Plummer, J. D. ELECTROCHEMICAL SOC INC. 1988: C359–C359

View details for Web of Science ID A1988P675200247
EFFECT OF OXYGEN PRECIPITATION ON PHOSPHORUS DIFFUSION IN CZOCHRALSKI SILICON APPLIED PHYSICS LETTERS Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A., Rek, Z. U., Stock, S. R. 1988; 53 (1): 34-36

View details for Web of Science ID A1988P109100012
A NOVEL TRENCH-INJECTOR POWER DEVICE WITH LOW ON RESISTANCE AND HIGH SWITCHING SPEED IEEE ELECTRON DEVICE LETTERS Liu, D. K., Plummer, J. D. 1988; 9 (7): 321-323

View details for Web of Science ID A1988N947500001
CHEMISTRY OF SI-SIO2 INTERFACE TRAP ANNEALING JOURNAL OF APPLIED PHYSICS Reed, M. L., Plummer, J. D. 1988; 63 (12): 5776-5793

View details for Web of Science ID A1988N823000025
ADVANCED DIFFUSION-MODELS FOR VLSI SOLID STATE TECHNOLOGY Griffin, P. B., Plummer, J. D. 1988; 31 (5): 171-176

View details for Web of Science ID A1988N611600016
Film Stress-related Vacancy Supersaturation in Silicon under Low-Pressure CVD Si3N4 Films Journal of Applied Physics Ahn, S., T., Kennel, H., W., Plummer, J., D., Tiller, W., A. 1988; 64: 4914
Fabrication of a p-Channel BICFET in the GexSi1-x/Si Systems Taft, R., C., Plummer, J., D., Iyer, S., S. 1988
Enhanced Sb Diffusion under Thermal Si3N4 Films During Annealing in Ar Applied Physics Letters Ahn, S., T., Kennel, H., W., Plummer, J., D., Tiller, W., A. 1988; 17 (53): 1593
Characterization of Surface Mobility on the Sidewalls of Dry-Etched Trenches Petti, C., J., McVittie, J., P., Plummer, J., D. 1988
Advanced Diffusion Models for VLSI Griffin, P., B., Plummer, J., D. 1988
Effect of Thin Film Stress on Dopant Diffusion in Silicon Ahn, S., T., Kennel, H., W., Plummer, J., D., Tiller, W., A. 1988
A Physical Model for the Observed Dependence of the Metal-Semiconductor Work Function Difference on Substrate Orientation Massoud, H., Z., Plummer, J., D. 1988
Range Distribution of Implanted Cesium Ions in Silicon Dioxide Films Journal Applied Physics Fishbein, B., J., Plummer, J., D. 1988; 12 (63): 5887-5889
A STUDY OF SILICON INTERSTITIAL KINETICS USING SILICON MEMBRANES - APPLICATIONS TO 2D DOPANT DIFFUSION JOURNAL OF APPLIED PHYSICS Ahn, S. T., Griffin, P. B., SHOTT, J. D., Plummer, J. D., Tiller, W. A. 1987; 62 (12): 4745-4755

View details for Web of Science ID A1987L184400015
ANALYTICAL RELATIONSHIP FOR THE OXIDATION OF SILICON IN DRY OXYGEN IN THE THIN-FILM REGIME JOURNAL OF APPLIED PHYSICS Massoud, H. Z., Plummer, J. D. 1987; 62 (8): 3416-3423

View details for Web of Science ID A1987K424500054
QUANTITATIVE MODELING OF SI/SIO2 INTERFACE FIXED CHARGE .2. PHYSICAL MODELING JOURNAL OF THE ELECTROCHEMICAL SOCIETY Akinwande, A. I., Plummer, J. D. 1987; 134 (10): 2573-2580

View details for Web of Science ID A1987K470800039
QUANTITATIVE MODELING OF SI/SIO2 INTERFACE FIXED CHARGE .1. EXPERIMENTAL RESULTS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Akinwande, A. I., Plummer, J. D. 1987; 134 (10): 2565-2573

View details for Web of Science ID A1987K470800038
PROCESS DEPENDENCE OF THE METAL-SEMICONDUCTOR WORK FUNCTION DIFFERENCE JOURNAL OF THE ELECTROCHEMICAL SOCIETY Akinwande, A. I., Plummer, J. D. 1987; 134 (9): 2297-2303

View details for Web of Science ID A1987K066500041
SI-SIO2 INTERFACE TRAP PRODUCTION BY LOW-TEMPERATURE THERMAL-PROCESSING APPLIED PHYSICS LETTERS Reed, M. L., Plummer, J. D. 1987; 51 (7): 514-516

View details for Web of Science ID A1987J560400016
MODEL FOR BULK EFFECTS ON SI INTERSTITIAL DIFFUSIVITY IN SILICON APPLIED PHYSICS LETTERS Griffin, P. B., Ahn, S. T., Tiller, W. A., Plummer, J. D. 1987; 51 (2): 115-117

View details for Web of Science ID A1987J051300020
GETTERING OF GOLD IN SILICON - A TOOL FOR UNDERSTANDING THE PROPERTIES OF SILICON INTERSTITIALS JOURNAL OF APPLIED PHYSICS Bronner, G. B., Plummer, J. D. 1987; 61 (12): 5286-5298

View details for Web of Science ID A1987H692700011
CHARACTERIZATION OF CESIUM DIFFUSION IN SILICON DIOXIDE FILMS USING BACKSCATTERING SPECTROMETRY APPLIED PHYSICS LETTERS FISHBEIN, B. J., Plummer, J. D. 1987; 50 (17): 1200-1202

View details for Web of Science ID A1987G970700029
TIME RESOLVED ANNEALING OF INTERFACE TRAPS IN POLYSILICON GATE METAL-OXIDE-SILICON CAPACITORS JOURNAL OF THE ELECTROCHEMICAL SOCIETY FISHBEIN, B. J., WATT, J. T., Plummer, J. D. 1987; 134 (3): 674-681

View details for Web of Science ID A1987G410200032
Efficient Numerical Simulation of the High Frequency MOS Capacitance IEEE Transactions on Electron Devices Watt, J., T., Plummer, J., D. 1987; ED-34 (10): 2214-2215
NONIDEAL BASE CURRENT IN BIPOLAR-TRANSISTORS AT LOW-TEMPERATURES IEEE TRANSACTIONS ON ELECTRON DEVICES Woo, J. C., Plummer, J. D., Stork, J. M. 1987; 34 (1): 130-138

View details for Web of Science ID A1987E921100018
SUBSTRATE CURRENT AT CRYOGENIC TEMPERATURES - MEASUREMENTS AND A TWO-DIMENSIONAL MODEL FOR CMOS TECHNOLOGY IEEE TRANSACTIONS ON ELECTRON DEVICES Henning, A. K., Chan, N. N., WATT, J. T., Plummer, J. D. 1987; 34 (1): 64-74

View details for Web of Science ID A1987E921100009
A LOW-TEMPERATURE NMOS TECHNOLOGY WITH CESIUM-IMPLANTED LOAD DEVICES IEEE TRANSACTIONS ON ELECTRON DEVICES WATT, J. T., FISHBEIN, B. J., Plummer, J. D. 1987; 34 (1): 28-38

View details for Web of Science ID A1987E921100005
Optimization of Bipolar Transistors for Low Temperature Operation Watt, J., T., Plummer, J., D. 1987
Effect of Interconnection Delay on Liquid Nitrogen Temperature CMOS Circuit Performance Watt, J., T., Plummer, J., D. 1987
Universal Mobility Field Curves for Electrons and Holes in MOS Inversion Layers Watt, J., T., Plummer, J., D. 1987
Time Resolved Annealing of Interface Traps in Polysilicon Gate Metal-Oxide-Silicon Capacitors Journal Electrochemical Society Fishbein, B., J., Watt, J., T., Plummer, J., D. 1987; 134 (3): 674-681
Quantitative Modeling of Si/SiO2 Interface Fixed Charge: II. Physical Modeling Journal Electrochemical Society Akinwande, A., I., Plummer, J., D. 1987; 134 (10): 2573-2580
A Model for Bulk Effects on Si Interstitial Diffusivity in Silicon Applied Physics Letters Griffin, P., B., Ahn, S., T., Tiller, W., D., Plummer, J., D. 1987; 2 (51): 115-117
SUPREM 3.5 - Process Modeling of GaAs Deal, M., D., Hansen, S., E., Anholt, R., Chou, S., Plummer, J., D., Dutton, R., W. 1987
Thermionic Emission Probability for Semiconductor-Insulator Interfaces IEEE Transactions on Electron Devices Henning, A., K., Plummer, J., D. 1987; ED-34 (10): 2211-2212
Process Dependence of the Metal Semiconductor Work Function Difference Journal Electrochemical Society Akinwande, A., I., Plummer, J., D. 1987; 134 (9): 2297-2303
Non-Ideal Base Current in Bipolar Transistors at Low Temperature IEEE Transactions on Electron Devices Woo, J., C.S., Plummer, J., D., Stork, J., M. C. 1987; ED-34 (1): 130-138
Characterization and Cesium Diffusion in Silicon Dioxide Films Using Backscattering Spectrometry Applied Physics Letters Fishbein, B., J., Plummer, J., D. 1987; 17 (50): 1200-1202
Analytical Relationship for the Oxidation of Silicon in Dry Oxygen in the Thin Regime Journal Applied Physics Massoud, H., Z., Plummer, J., D. 1987; 8 (62): 3416-3423
The Field Assisted Turn-Off Thyristor: A Regenerative Device with Voltage Controlled Turn-Off Petti, C., J., Plummer, J., D. 1987
A Low Temperature NMOS Technology with Cesium Implanted Load Devices IEEE Transactions on Electron Devices Watt, J., T., Fishbein, B., J., Plummer, J., D. 1987; ED-34 (1): 28-38
A Study of Silicon Interstitial Kinetics Using Silicon Membranes - Applications to 2-D Dopant Diffusion Journal Applied Physics Ahn, S., T., Griffin, P., B., Shott, J., D., Plummer, J., D., Tiller, W., A. 1987; 12 (62): 4745-4755
Characterization of Cs Oxide Implants for Use in MOS Devices Operated at 77K Fishbein, B., J., Watt, J., T., Plummer, J., D. 1987
Prospects for Cooled MOS Devices and Circuits Plummer, J., D. 1987
Substrate Current at Cryogenic Temperatures: Measurements and a 2-D Model for CMOS Technology IEEE Transactions on Electron Devices Henning, A., K., Chan, N., N., Watt, J., T., Plummer, J., D. 1987; ED-34 (2): 64-74
Si/SiO2 Interface Trap Production by Low Temperature Thermal Processing Applied Physics Letters Reed, M., L., Plummer, J., D. 1987; 7 (51): 514-516
Quantitative Modeling of Si/SiO2 Interface Fixed Charge: I. Experimental Results Journal Electrochemical Society Akinwande, A., I., Plummer, J., D. 1987; 134 (10): 2565-2573
Gettering of Gold in Silicon - A Tool for Understanding the Properties of Silicon Interstitials Journal Applied Physics Bronner, G., B., Plummer, J., D. 1987; 12 (61): 5286-5298
2-REACTION MODEL OF INTERFACE TRAP ANNEALING IEEE TRANSACTIONS ON NUCLEAR SCIENCE Reed, M. L., Plummer, J. D. 1986; 33 (6): 1198-1202

View details for Web of Science ID A1986F270900007
A DI/JI-COMPATIBLE MONOLITHIC HIGH-VOLTAGE MULTIPLEXER IEEE TRANSACTIONS ON ELECTRON DEVICES Williams, R. K., SEVILLA, L. T., RUETZ, E., Plummer, J. D. 1986; 33 (12): 1977-1984

View details for Web of Science ID A1986E797000009
PHYSICS, TECHNOLOGY, AND MODELING OF POLYSILICON EMITTER CONTACTS FOR VLSI BIPOLAR-TRANSISTORS IEEE TRANSACTIONS ON ELECTRON DEVICES PATTON, G. L., Bravman, J. C., Plummer, J. D. 1986; 33 (11): 1754-1768

View details for Web of Science ID A1986E351000019
A MODIFIED LIGHTLY DOPED DRAIN STRUCTURE FOR VLSI MOSFETS IEEE TRANSACTIONS ON ELECTRON DEVICES Bampi, S., Plummer, J. D. 1986; 33 (11): 1769-1779

View details for Web of Science ID A1986E351000020
SHORT-CHANNEL EFFECTS IN MOSFETS AT LIQUID-NITROGEN TEMPERATURE IEEE TRANSACTIONS ON ELECTRON DEVICES Woo, J. C., Plummer, J. D. 1986; 33 (7): 1012-1019

View details for Web of Science ID A1986C640800019
THERMAL-INSTABILITY OF SCHOTTKY DIODE BARRIER HEIGHTS MODIFIED BY INERT ION SPUTTER-ETCHING DAMAGE IEEE ELECTRON DEVICE LETTERS MACWILLIAMS, K. P., Plummer, J. D. 1986; 7 (4): 247-249

View details for Web of Science ID A1986A770700015
POINT-DEFECT GENERATION DURING OXIDATION OF SILICON IN DRY OXYGEN .1. THEORY JOURNAL OF APPLIED PHYSICS Dunham, S. T., Plummer, J. D. 1986; 59 (7): 2541-2550

View details for Web of Science ID A1986A570100042
POINT-DEFECT GENERATION DURING OXIDATION OF SILICON IN DRY OXYGEN .2. COMPARISON TO EXPERIMENT JOURNAL OF APPLIED PHYSICS Dunham, S. T., Plummer, J. D. 1986; 59 (7): 2551-2561

View details for Web of Science ID A1986A570100043
PROCESS PHYSICS - IMPLICATIONS FOR MANUFACTURING OF SUBMICRON SILICON DEVICES SOLID STATE TECHNOLOGY Plummer, J. D. 1986; 29 (3): 61-66

View details for Web of Science ID A1986A623800003
Two Reaction Model of Interface Trap Annealing IEEE Trans. Nuc. Science Reed, M., L., Plummer, J., D. 1986; NS-33 (6): 1198-1202
Kinetic Studies of Silicon-Silicon Dioxide Interface Trap Annealing Using Rapid Thermal Processing Reed, L., Plummer, J., D. 1986
Complementary Silicon MESFETs for VLSI MacWilliams, K., P., Plummer, J., D. 1986
Thermal Instability of Schottky Diode Barrier Heights Modified by Inert Ion Sputter-Etching Damage IEEE Electron Device Letters MacWilliams, K., P., Plummer, J., D. 1986; EDL-7 (4): 247-249
Point Defect Generation During Oxidation of Silicon in Dry Oxygen. I. Theory Journal Applied Physics Dunham, S., T., Plummer, J., D. 1986; 7 (59): 2541-2550
Short Channel Effects in MOSFETs at Liquid Nitrogen Temperature IEEE Transactions on Electron Devices Woo, J., C.S., Plummer, J., D. 1986; ED-33 (7): 1012-1019
Physics, Technology and Modeling of Polysilicon Emitter Contacts for VLSI Bipolar Transistors IEEE Transactions on Electron Devices Patton, G., L., Bravman, J., C., Plummer, J., D. 1986; ED-33 (11): 1754-1768
A Modified Lightly Doped Drain Structure for VLSI MOSFETs IEEE Transactions on Electron Devices Bampi, S., Plummer, J., D. 1986; ED-33 (11): 1769-1779
A DI/JI Compatible Monolithic High-Voltage Multiplexer IEEE Transactions on Electron Devices Williams, R., K., Sevilla, L., T., Ruetz, E., Plummer, J., D. 1986; ED-33 (12): 1977-1984
Modeling Dopant Redistribution in SiO2/WSi2/Si Structures Shone, F., C., Hansen, S., E., Kao, D., B., Saraswat, K., C., Plummer, J., D. 1986
Process Physics Determining 2D Impurity Profiles in VLSI Devices Griffin, P., B., Plummer, J., D. 1986
Low Temperature CMOS Devices and Technology Plummer, J., D. 1986
Kinetic Modeling of <100> and <111> Interface Trap Annealing Reed, M., L., Plummer, J., D. 1986
Point Defect Generation During Oxidation of Silicon in Dry Oxygen. II. Comparison to Experiment Journal Applied Physics Dunham, S., T., Plummer, J., D. 1986; 7 (59): 2551-2561
Process Physics: Implications for Manufacturing of Submicron Silicon Devices Plummer, J., D. 1986
Morphological Studies of Polysilicon Emitter Contacts Proceedings Materials Research Society Bravman, J., C., Patton, G., L., Sinclair, R., Plummer, J., D. 1985; 37: 461-466
THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .2. PHYSICAL-MECHANISMS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Massoud, H. Z., Plummer, J. D., Irene, E. A. 1985; 132 (11): 2693-2700

View details for Web of Science ID A1985ATZ4700034
THERMAL-OXIDATION OF SILICON IN DRY OXYGEN GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .1. EXPERIMENTAL RESULTS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Massoud, H. Z., Plummer, J. D., Irene, E. A. 1985; 132 (11): 2685-2693

View details for Web of Science ID A1985ATZ4700033
SILICON INTERSTITIAL GENERATION BY ARGON IMPLANTATION APPLIED PHYSICS LETTERS Bronner, G. B., Plummer, J. D. 1985; 46 (5): 510-512

View details for Web of Science ID A1985AFC2900024
THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - ACCURATE DETERMINATION OF THE KINETIC RATE CONSTANTS JOURNAL OF THE ELECTROCHEMICAL SOCIETY Massoud, H. Z., Plummer, J. D., Irene, E. A. 1985; 132 (7): 1745-1753

View details for Web of Science ID A1985ALK9100048
MEASUREMENT AND REDUCTION OF INTERFACE STATES AT THE RECRYSTALLIZED SILICON-UNDERLYING INSULATOR INTERFACE APPLIED PHYSICS LETTERS Sturm, J. C., Plummer, J. D., Gibbons, J. F. 1985; 46 (12): 1171-1173

View details for Web of Science ID A1985AJT1100022
RAPID THERMAL ANNEALING OF INTERFACE STATES IN ALUMINUM GATE METAL-OXIDE-SILICON CAPACITORS APPLIED PHYSICS LETTERS Reed, M. L., FISHBEIN, B., Plummer, J. D. 1985; 47 (4): 400-402

View details for Web of Science ID A1985APG5500026
Impact of Processing Parameters on Base Current in Polysilicon Contacted Bipolar Transistors Patton, G., L., Bravman, J., C., Plummer, J., D. 1985
Formation of 0.1 µm N++p and P++N Junctions by Doped Silicide Technology Shone, F., C., Saraswat, K., C., Plummer, J., D. 1985
Thermal Oxidation of Silicon in Dry Oxygen: Growth Rate Enhancement in the Thin Regime. II. Physical Mechanisms Journal Electrochemical Society Massoud, H., Z., Plummer, J., D., Irene, E., A. 1985; 132 (11): 2694-2700
Insulator/Silicon Interfaces - Impact on Substrate Defects and Impurity Diffusion in VLSI Structures Plummer, J., D. 1985
Thermal Oxidation of Silicon in Dry Oxygen: Accurate Determination of the Kinetic Rate Constants Journal Electrochemical Society Massoud, H., Z., Plummer, J., D., Irene, E., A. 1985; 132 (7): 1745-1752
MEASUREMENT OF SILICON INTERSTITIAL DIFFUSIVITY APPLIED PHYSICS LETTERS Griffin, P. B., FAHEY, P. M., Plummer, J. D., DUTTON, R. W. 1985; 47 (3): 319-321

View details for Web of Science ID A1985AMT4900053
A Quantitative Model for Si/SiO2 Interface Charges in Oxidizing and Dilute Oxidizing Ambients Akinwande, A., I., Plummer, J., D. 1985
Gettering in Low Temperature VLSI Processes Bronner, G., B., Plummer, J., D. 1985
Thermal Oxidation of Silicon in Dry Oxygen: Growth Rate Enhancement in the Thin Regime. I. Experimental Results Journal Electrochemical Society Massoud, H., Z., Plummer, J., D., Irene, E., A. 1985; 132 (11): 2685-2693
Silicon Interstitial Generation by Argon Implantation Applied Physics Letters Bronner, G., B., Plummer, J., D. 1985; 46 (5): 510-512
Measurement and Reduction of Interface States at the Recrystallized Silicon-Underlying Insulator Interface Applied Physics Letters Sturm, J., C., Plummer, J., D., Gibbons, J., F. 1985; 12 (46): 1171-1172
Substrate Current in N-Channel and P-Channel MOSFETs Between 77K and 300K: Characterization and Simulation Henning, A., K., Chan, N., Plummer, J., D. 1985
Modified LDD Device Structures for VLSI Bampi, S., Plummer, J., D. 1985
A New Silicided Shallow Junction Technology for CMOS VLSI Shone, F., C., Saraswat, K., C., Plummer, J., D. 1985
STRUCTURE AND MORPHOLOGY OF POLYCRYSTALLINE SILICON-SINGLE CRYSTAL SILICON INTERFACES JOURNAL OF APPLIED PHYSICS Bravman, J. C., PATTON, G. L., Plummer, J. D. 1985; 57 (8): 2779-2782

View details for Web of Science ID A1985AHS7300014
A High Voltage Monolithic Multiplexer for Use in Vehicle Tester Applications Plummer, J., D., Sevilla, L., T., McCarthy, P., F., Sherman, J., D. 1985
Rapid Thermal Annealing of Interface States in Aluminum Gate MOS Capacitors Applied Physics Letters Reed, M., L., Fishbein, B., Plummer, J., D. 1985; 46 (4): 400-402
Power MOS Devices in Discrete and Integrated Circuits in Power Integrated Circuits, McGraw Hill Plummer, J., D., Blanchard, R., D. 1985
Process and Device Modeling for VLSI Structures Semiconductor Processing, ASTM, STP 850 Plummer, J., D. 1984
ELECTRICAL PERFORMANCE AND PHYSICS OF ISOLATION REGION STRUCTURES FOR VLSI IEEE TRANSACTIONS ON ELECTRON DEVICES GOODWIN, S. H., Plummer, J. D. 1984; 31 (7): 861-872

View details for Web of Science ID A1984SV87600002
CHARACTERIZATION OF TRANSIENT PROCESS PHENOMENA USING A TEMPERATURE-TOLERANT METALLURGY IEEE ELECTRON DEVICE LETTERS Bronner, G. B., Plummer, J. D. 1984; 5 (3): 75-77

View details for Web of Science ID A1984SF10700004
EXPERIMENTAL-DETERMINATION OF THE TEMPERATURE-DEPENDENCE OF ARGON ANNEALED FIXED OXIDE CHARGE AT THE SI/SIO2 INTERFACE APPLIED PHYSICS LETTERS Akinwande, A. I., Ho, C. P., Plummer, J. D. 1984; 45 (3): 263-265

View details for Web of Science ID A1984TE86900031
Structural Aspects of Polysilicon Emitter Contacts Bravman, J., C., Patton, G., L., Plummer, J., D. 1984
Simulation of Multilayer Structures for VLSI Using the SUPREM III Process Simulation Program Hansen, S., E., Shott, J., D., Fahey, P., M., Plummer, J., D., Dutton, R., W. 1984
Physical Modeling of Backside Gettering Bronner, G., B., Plummer, J., D. 1984
Characterization of Bipolar Transistors with Polysilicon Emitter Contacts Patton, G., L., Bravman, J., C., Plummer, J., D. 1984
Electrical Performance and Physics of Isolation Region Structures for VLSI IEEE Transactions on Electron Devices Goodwin, S., H., Plummer, J., D. 1984; ED-31: 861-872
Characterization of Transient Process Phenomena Using a Temperature Tolerant Metallurgy IEEE Electron Device Letters Bronner, G., Plummer, J., D. 1984; EDL-5 (3): 75-77
Experimental Determination of the Temperature Dependence of Argon Annealed Fixed Oxide Charge at the Si/SiO2 Interface Applied Physics Letters Akinwande, A., I., Ho, C., P., Plummer, J., D. 1984; 45 (3): 263-265
Physical Modeling of Backside Damage Gettering Bronner, G., B., Plummer, J., D. 1984
Point Defect Generation During Silicon Oxidation Dunham, S., Plummer, J. 1984
Trench Isolation Technology and Device Physics Goodwin, S., H., Plummer, J., D. 1983
ANALOG MULTIPLEXERS SWITCH HIGH VOLTAGES ELECTRONIC DESIGN POHLMAN, J. T., Tsang, F., Walker, J. T., Plummer, J. D. 1983; 31 (22): 209-?

View details for Web of Science ID A1983RM49000018
VLSI PROCESS MODELING - SUPREM-III IEEE TRANSACTIONS ON ELECTRON DEVICES Ho, C. P., Plummer, J. D., Hansen, S. E., DUTTON, R. W. 1983; 30 (11): 1438-1453

View details for Web of Science ID A1983RT38000003
Current Problems in Silicon Oxidation Plummer, J., D. 1983
SUPREM III - Process Simulation Toward VLSI Ho, C., P., Plummer, J., D., Hansen, S., E., Dutton, R., W. 1983
Kinetics of As-Grown Fixed Oxide Charge Nf at the Si-SiO2 Interface During Thermal Oxidation of Silicon Akinwande, A., I., Ho, C., P., Plummer, J., D. 1983
VLSI Process Modeling - SUPREM III IEEE Transactions on Electron Devices Ho, C., P., Plummer, J., D., Hansen, S., E., Dutton, R., W. 1983; Ed-30: 1438-1453
Thermal Oxidation: Kinetics, Charges, Physical Models, and Interaction with Other Processes in VLSI Devices Plummer, J., D., Deal, B., E. 1983
The Role of Point Defects in VLSI Processing Lin, A., Dutton, R., W., Plummer, J., D. 1983
Oxide Growth Kinetics and Mechanical Stress Effects in the Thin Regime (<500 Å), Massoud, H., Z., Ho, C., P., Irene, E., A., Plummer, J., D. 1982
Process Dependence of Si/SiO2 Interface Charges Akinwande, A., I., Ho, C., P., Plummer, J., D. 1982
The Use of 2D Effects in LOCOS Structures to Improve Device Isolation Goodwin, S., H., Plummer, J., D. 1982
A Comparison of Buried Channel and Surface Channel MOSFETs for VLSI Nguyen, T., N., Plummer, J., D. 1982
An Implantable Ion Sensor Transducer Harame, D., Shott, J., Plummer, J., Meindl, J., D. 1981
SMALL GEOMETRY DEPLETED BASE BIPOLAR-TRANSISTORS (BSIT) - VLSI DEVICES IEEE TRANSACTIONS ON ELECTRON DEVICES Stork, J. M., Plummer, J. D. 1981; 28 (11): 1354-1363

View details for Web of Science ID A1981MQ64900015
The Role of the Si/SiO2 Interface in Silicon Oxidation Kinetics Plummer, J., D. 1981
Physical Mechanisms Responsible for Short Channel Effects in MOS Devices Nguyen, T., N., Plummer, J., D. 1981
Small Geometry Depleted Base Bipolar Transistors (BSIT) - VLSI Devices? IEEE Transactions on Electron Devices Stork, J., M. C., Plummer, J., D. 1981; ED-28 (11): 1354-1364
Measurement of Submicron Potential Barriers in Depleted Base Transistors Stork, J., M. C., Plummer, J., D. 1981
Thermal Oxidation of Silicon in Dry O2 in the Thin Regime Massoud, H., Z., Plummer, J., D., Irene, E., A. 1981
Process Sensitivity of Depleted Base Bipolar Transistors (BSIT) Stork, J., M. C., Plummer, J., D. 1981
Monolithic MOS High Voltage Integrated Circuits Plummer, J., D. 1980
ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES IEEE TRANSACTIONS ON ELECTRON DEVICES Sun, S. C., Plummer, J. D. 1980; 27 (8): 1497-1508

View details for Web of Science ID A1980KH84500029
INSULATED-GATE PLANAR THYRISTORS .1. STRUCTURE AND BASIC OPERATION IEEE TRANSACTIONS ON ELECTRON DEVICES Plummer, J. D., Scharf, B. W. 1980; 27 (2): 380-387

View details for Web of Science ID A1980JM12500010
MODELING OF THE ON-RESISTANCE OF LDMOS, VDMOS, AND VMOS POWER TRANSISTORS IEEE TRANSACTIONS ON ELECTRON DEVICES Sun, S. C., Plummer, J. D. 1980; 27 (2): 356-367

View details for Web of Science ID A1980JM12500007
ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES IEEE JOURNAL OF SOLID-STATE CIRCUITS Sun, S. C., Plummer, J. D. 1980; 15 (4): 562-573

View details for Web of Science ID A1980KL99300030
INSULATED-GATE PLANAR THYRISTORS .2. QUANTITATIVE MODELING IEEE TRANSACTIONS ON ELECTRON DEVICES Scharf, B. W., Plummer, J. D. 1980; 27 (2): 387-394

View details for Web of Science ID A1980JM12500011
ON THE GENERATION OF HIGH-FREQUENCY ACOUSTIC ENERGY WITH POLYVINYLIDENE FLUORIDE IEEE TRANSACTIONS ON SONICS AND ULTRASONICS SWARTZ, R. G., Plummer, J. D. 1980; 27 (6): 295-303

View details for Web of Science ID A1980KX17800003
Modeling of Depleted Base Bipolar Structures Stork, J., M. C., Plummer, J., D. 1980
Insulated Gate Planar Thyristors, Part I: Structure and Basic Operation IEEE Transactions on Electron Devices Plummer, J., D., Scharf, B., W. 1980; ED-27 (2): 380-387
Modeling of the On Resistance of LDMOS, VDMOS, and VMOS Power MOS Transistors IEEE Transactions on Electron Devices Sun, S., C., Plummer, J., D. 1980; ED-27 (2): 356-367
Growth Kinetics and Charge Properties of Thin, Thermally Grown SiO2 Layers on Silicon Massoud, H., Z., Ho, C., P., Plummer, J., D. 1980
Monolithic Silicon - PVF2 Piezoelectric Arrays for Ultrasonic Imaging 8th International Symposium on Acoustical Imaging, May 30-June 2, 1978, Key Biscayne Florida, Acoustical Imaging Swartz, R., G., Plummer, J., D. 1980; 8: 69-95
Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces IEEE Transactions on Electron Devices Sun, S., C., Plummer, J., D. 1980; ED-27 (8): 1497-1508
On the Generation of High Frequency Acoustic Energy with Polyvinylidene Fluoride IEEE Transactions Sonics and Ultrasonics Swartz, R., G., Plummer, J., D. 1980; SU-27 (6): 295-303
Insulated Gate Planar Thyristors, Part 2: Quantitative Modeling IEEE Transactions on Electron Devices Scharf, B., W., Plummer, J., D. 1980; ED-27 (2): 387-394
Thermal Oxidation: Kinetics, Charges, Physical Models and Application Plummer, J., D. 1980
Technology and Device Structures for VLSI Plummer, J., D. 1980
Integrated Silicon-PVF2 Acoustic Transducer Arrays IEEE Transactions on Electron Devices Swartz, R., G., Plummer, J., D. 1979; ED-26 (12): 1921-1931
SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .2. COMPARISON WITH EXPERIMENT AND DISCUSSION JOURNAL OF THE ELECTROCHEMICAL SOCIETY Ho, C. P., Plummer, J. D. 1979; 126 (9): 1523-1530

View details for Web of Science ID A1979HK66300019
SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY JOURNAL OF THE ELECTROCHEMICAL SOCIETY Ho, C. P., Plummer, J. D. 1979; 126 (9): 1516-1522

View details for Web of Science ID A1979HK66300018
INTEGRATED SILICON-PVF2 ACOUSTIC TRANSDUCER ARRAYS IEEE TRANSACTIONS ON ELECTRON DEVICES SWARTZ, R. G., Plummer, J. D. 1979; 26 (12): 1921-1931

View details for Web of Science ID A1979JC56800009
IMPROVED MOS DEVICE PERFORMANCE THROUGH THE ENHANCED OXIDATION OF HEAVILY DOPED N+ SILICON IEEE TRANSACTIONS ON ELECTRON DEVICES Ho, C. P., Plummer, J. D. 1979; 26 (4): 623-630

View details for Web of Science ID A1979GV91700048
An Improved Wedge-Type Backing for Piezoelectric Transducers IEEE Transactions Sonics and Ultrasonics Swartz, R., G., Plummer, J., D., Meindl, J., D. 1979; SU-26 (2): 140-142
Improved MOS Device Performance Through the Enhanced Oxidation of Heavily Doped N++ Silicon Special Issue on VLSI, IEEE Transactions on Electron Devices Ho, C., P., Plummer, J., D. 1979; ED-26 (4): 623-630
An Advanced 34 Element Monolithic Silicon-PVF2 Piezoelectric Array for Ultrasonic Imaging Swartz, R., G., Plummer, J., D. 1979
An Electronically Addressed Bulk Acoustic Wave Fourier Transform Device Auld, B., A., Pettibone, D., W., Plummer, J., D., Swartz, R., G. 1979
Si/SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels. I. Theory Journal Electrochemical Society Ho, C., P., Plummer, J., D. 1979; 126 (9): 1516-1522
Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces Sun, S., C., Plummer, J., D. 1979
Si/SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels. II. Comparison with Experiment and Discussion Journal Electrochemical Society Ho, C., P., Plummer, J., D. 1979; 126 (9): 1523-1530
Thermal Oxidation of Heavily Doped Silicon: Physical Modeling and Device Applications Ho, C., P., Plummer, J., D. 1978
THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON JOURNAL OF THE ELECTROCHEMICAL SOCIETY Ho, C. P., Plummer, J. D., Meindl, J. D., Deal, B. E. 1978; 125 (4): 665-671

View details for Web of Science ID A1978EU18200035
2-DIMENSIONAL TRANSMIT-RECEIVE CERAMIC PIEZOELECTRIC ARRAYS - CONSTRUCTION AND PERFORMANCE IEEE TRANSACTIONS ON SONICS AND ULTRASONICS Plummer, J. D., SWARTZ, R. G., MAGINNESS, M. G., BEAUDOUIN, J. R., Meindl, J. D. 1978; 25 (5): 273-280

View details for Web of Science ID A1978FM84700001
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES JOURNAL OF THE ELECTROCHEMICAL SOCIETY Deal, B. E., Hess, D. W., Plummer, J. D., Ho, C. P. 1978; 125 (2): 339-346

View details for Web of Science ID A1978EK22200032
OBSERVATION OF PHOSPHORUS PILE-UP AT SIO2-SI INTERFACE JOURNAL OF APPLIED PHYSICS JOHANNESSEN, J. S., SPICER, W. E., Gibbons, J. F., Plummer, J. D., Taylor, N. J. 1978; 49 (8): 4453-4458

View details for Web of Science ID A1978FL73400028
Trade-Off Between Threshold Voltage and Breakdown in High Voltage Double Diffused MOS Transistors IEEE Transactions on Electron Devices Pocha, M., D., Plummer, J., D., Meindl, J., D. 1978; Ed-25 (11): 1325-1327
Kinetics of the Thermal Oxidation of Silicon in O2/H2O and O2/Cl2 Mixtures Journal Electrochemical Society Deal, B., E., Hess, D., W., Plummer, J., D., Ho, C., P. 1978; 125 (2): 339-346
Observation of Phosphorus Pile-Up at the SiO2-Si Interface Journal Applied Physics Johannessen, J., S., Spicer, W., E., Gibbons, J., F., Plummer, J., D., Taylor, N., J. 1978; 8 (49)
A MOS-Controlled Triac Device Scharf, B., W., Plummer, J., D. 1978
Thermal Oxidation of Heavily Phosphorus Doped Silicon Journal Electrochemical Society Ho, C., P., Plummer, J., D., Deal, B., E., Meindl, J., D. 1978; 125 (4): 665-671
Thermal Oxides Plummer, J., D. 1978
Two Dimensional Transmit/Receive Piezoelectric Arrays - Construction and Performance IEEE Journal Sonics and Ultrasonics Plummer, J., D., Swartz, R., G., Maginness, M., G., Beaudouin, J., R., Meindl, J., D. 1978; SU-25 (5): 273-280
Process Phenomena - Silicon Oxidation Plummer, J., D. 1977
Silicon Epitaxy and Oxidation Process and Device Modeling for Integrated Circuit Design Meindl, J., D., Dutton, R., W., Saraswat, K., C., Plummer, J., D., Kamins, T., I., Dea, B., E. edited by Wiele, V., Engl, Jespers Noordhoff-Leyden. 1977: 57–113
The Need for Process Models in a Ubiquitous Technology Meindl, J., D., Saraswat, K., C., Plummer, J., D. 1977
State-of-the-art in two-dimensional ultrasonic transducer array technology. Medical physics MAGINNESS, M. G., Plummer, J. D., Beaver, W. L., Meindl, J. D. 1976; 3 (5): 312-318

Abstract

Attention is given to means of sensing ultrasonic energy distributions over an area. Under the restraints appropiate to real-time imaging of deep body organs, piezoelectric arrays offer the most promising method. Adaptation of integrated circuit techniques to array assembly permits very large arrays of small elements to be batch fabricated. Further, special semiconductor switching devices specifically designed for addressing the array have been produced and applied. These permit both the passage of weak received signals and the application of voltage and current levels sufficient for transmission without significant disturbance of the basic piezoelectric element properties. Emphasis is placed on the complete data acquisition, processing, and display flexibility that arises from an array capability. Operation becomes possible in any of the presently used A or time motion (TM), in real time B or C scan, or in novel scan patterns adapted to specific organs. Further development with acoustic and electronic focusing, taking advantage of the unique possibilities obtained with the bidirectional array structure, is discussed.

View details for PubMedID 979920
Avalanche Breakdown in High Voltage D-MOS Devices IEEE Transactions on Electron Devices, ED-23 Declercq, M., J., Plummer, J., D. 1976: 1-4
MONOLITHIC 200-V CMOS ANALOG SWITCH IEEE JOURNAL OF SOLID-STATE CIRCUITS Plummer, J. D., Meindl, J. D. 1976; 11 (6): 809-817

View details for Web of Science ID A1976CQ29000012
AVALANCHE BREAKDOWN IN HIGH-VOLTAGE D-MOS DEVICES IEEE TRANSACTIONS ON ELECTRON DEVICES Declercq, M. J., Plummer, J. D. 1976; 23 (1): 1-4

View details for Web of Science ID A1976BE70700001
Filter Bank Approach for Volume and Mean Flow Estimation in an Ultrasonic Blood Flowmeter Bulletin Electrochemical Laboratory, Japan Hayashi, Y., Plummer, J., D., Allen, H., V., Gill, R., W., Meindl, J., D. 1976; 40 (4, 5): 392-408
A Monolithic 200 Volt CMOS Analog Switch Plummer, J., D., Meindl, J., D. 1976
A Monolithic 200 Volt CMOS Analog Switch IEEE Journal of Solid State Circuits Plummer, J., D., Meindl, J., D. 1976; SC-11: 809-817
Silicon Through-Hole Substrate Bulletin Electrochemical Laboratory, Japan Hayashi, Y., Hayashi, F., Plummer, J., D., Meindl, J., D. 1976; 40 (4, 5): 409-416
Ultrasonic Imaging Using Two-Dimensional Transducer Arrays Cardiovascular Imaging and Image Processing, Theory and Practice Beaver, W., L., Maginness, M., G., Plummer, J., D., Meindl, J., D. 1975; 72
State-of-the-art in Two Dimensional Ultrasonic Transducer Array Technology Maginness, M., G., Plummer, J., D., Beaver, W., L., Meindl, J., D. 1975
A New Ultrasonic Imaging System for Real Time Cardiac Imaging Plummer, J., D., Meindl, J., D., Maginness, M., G. 1974
CARDIAC DYNAMICS VISUALIZATION SYSTEM MAGINNES, M. G., Plummer, J. D., Meindl, J. D., SUSAL, A. L. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1974: 69–69

View details for Web of Science ID A1974S158400056
A Real Time 3-D Ultrasonic Imaging System Meindl, J., D., Plummer, J., D., Maginness, M., G. 1974
Ultrasonic Imaging System for Real Time Cardiac Imaging Susal, A., L., Plummer, J., D., Maginness, M., G., Meindl, J., D. 1974
An Acoustic-Image Sensor Using a Transmit-Receive Array Plummer, J., D., Meindl, J., D., Maginness, M., G. 1973
Real Time Imaging Using a Transmit-Receive Transducer Array Maginness, M., G., Plummer, J., D., Meindl, J., D., Susal, A., L. 1973
A Cardiac Dynamics Visualization System Maginness, M., G., Plummer, J., D., Meindl, J., D., Susal, A., L. 1973
Solid-State Image Sensors for Biomedical Applications Melen, R., D., Garland, H., T., Linvill, J., G., Maginness, M., G., Plummer, J., D., Meindl, J., D. 1973
MOS Electronics for a Portable Reading Aid for the Blind IEEE Journal of Solid-State Circuits, SC-7 Plummer, J., D., Meindl, J., D. 1972: 111-120
MOS ELECTRONICS FOR A PORTABLE READING AID FOR BLIND IEEE JOURNAL OF SOLID-STATE CIRCUITS Plummer, J. D., Meindl, J. D. 1972; SC 7 (2): 111-?

View details for Web of Science ID A1972M061300003
A Low-Light Self-Scanned MOS Image Sensor Plummer, J., D., Meindl, J., D. 1972
High Voltage Monolithic MOS Driver Arrays Plummer, J., D., Berger, J., Meindl, J., D. 1971
A Reading Aid for the Blind Using MOS Electronics Plummer, J., D., Meindl, J., D. 1970
Integrated Electronics for a Reading Aid for the Blind Meindl, J., D., Plummer, J., D., Salsbury, P., J., Brugler, J., S. 1969
Integrated Electronics for a Reading Aid for the Blind IEEE Journal of Solid-State Circuits, SC-4 Brugler, J., S., Meindl, J., D., Plummer, J., D., Salsbury, P., J., Young, W., T. 1969: 304-312

Jim Plummer

John M. Fluke Professor of Electrical Engineering and Professor, by courtesy, of Materials Science and Engineering

Web page: https://profiles.stanford.edu/jim-plummer

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