Ke Zeng received his Ph.D. and MS degree in the Electrical Engineering Department of SUNY-Buffalo. His current research is focused on fabricating various high power/performance electronic devices based on GaN and Ga2O3, especially utilizing various novel edge termination techniques and device structures, as well as understanding the fundamental physics underlying these devices.

Stanford Advisors

Lab Affiliations

All Publications

  • Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer IEEE ELECTRON DEVICE LETTERS Zeng, K., Soman, R., Bian, Z., Jeong, S., Chowdhury, S. 2022; 43 (9): 1527-1530
  • 2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer IEEE ELECTRON DEVICE LETTERS Bian, Z., Zeng, K., Chowdhury, S. 2022; 43 (4): 596-599
  • A discussion on various experimental methods of impact ionization coefficient measurement in GaN AIP ADVANCES Ji, D., Zeng, K., Bian, Z., Shankar, B., Gunning, B. P., Binder, A., Dickerson, J. R., Aktas, O., Anderson, T. J., Kaplar, R. J., Chowdhury, S. 2022; 12 (3)

    View details for DOI 10.1063/5.0083111

    View details for Web of Science ID 000772898200002

  • Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization Shankar, B., Bian, Z., Zeng, K., Meng, C., Martinez, R., Chowdhury, S., Gunning, B., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., IEEE IEEE. 2022
  • On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress Shankar, B., Zeng, K., Gunning, B., Lee, K., Martinez, R., Meng, C., Zhou, X., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., Chowdhury, S., IEEE IEEE. 2021: 40-43
  • Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation IEEE TRANSACTIONS ON ELECTRON DEVICES Zeng, K., Chowdhury, S. 2020; 67 (6): 2457–62
  • Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage IEEE ELECTRON DEVICE LETTERS Sharma, S., Zeng, K., Saha, S., Singisetti, U. 2020; 41 (6): 836–39