Mohamadali is an experienced Postdoctoral researcher at Stanford University with a demonstrated history of working in high-power high-frequency transistors, all-diamond diodes, and diamond integration for thermal management, III-V wide bandgap semiconductors, integrated microsystems including MEMS/NEMS devices, and microfluidic channels. He is an expert in fab process design-integration, process and device modeling (Athena, Atlas), thin-film deposition techniques (Evaporation, Sputtering, PVD, ALD, and PECVD), dry etching (ICP/RIE etching of Diamond, AlN, SiN, Al2O3, SiO2), wet etching (bulk Si micromachining), and single-crystalline/polycrystalline diamond growth. He is currently working on the growth, fabrication, and characteristics of GaN HEMTs with diamond integrated for thermal management to solve the self-heating problem of mm-wave devices.

Stanford Advisors

All Publications

  • Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology CRYSTAL GROWTH & DESIGN Malakoutian, M., Ren, C., Woo, K., Li, H., Chowdhury, S. 2021; 21 (5): 2624-2632
  • Polycrystalline diamond growth on beta-Ga2O3 for thermal management APPLIED PHYSICS EXPRESS Malakoutian, M., Song, Y., Yuan, C., Ren, C., Lundh, J., Lavelle, R. M., Brown, J. E., Snyder, D. W., Graham, S., Choi, S., Chowdhury, S. 2021; 14 (5)
  • Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond PHYSICAL REVIEW B Peterson, R., Malakoutian, M., Xu, X., Chapin, C., Chowdhury, S., Senesky, D. G. 2020; 102 (7)
  • Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature Ren, C., Malakoutian, M., Li, S., Chowdhury, S., IEEE IEEE. 2020
  • Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Malakoutian, M., Benipal, M., Koeck, F. A., Nemanich, R. J., Chowdhury, S. 2020; 8: 614–18
  • A Study on the First-Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Chun, J., Li, S., Malakoutian, M., Ji, D., Chowdhury, S. 2019
  • A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN CRYSTALS Malakoutian, M., Laurent, M. A., Chowdhury, S. 2019; 9 (10)