Bio


McIntyre's group performs research on nanostructured inorganic materials for applications in electronics, energy technologies and sensors. He is best known for his work on metal oxide/semiconductor interfaces, ultrathin dielectrics, defects in complex metal oxide thin films, and nanostructured Si-Ge single crystals. His research team synthesizes materials, characterizes their structures and compositions with a variety of advanced microscopies and spectroscopies, studies the passivation of their interfaces, and measures functional properties of devices.

Academic Appointments


Administrative Appointments


  • Department Chair, Materials Science and Engineering (2014 - Present)
  • Director, Geballe Laboratory for Advance Materials (2008 - 2013)

Professional Education


  • ScD, MIT (1993)

2016-17 Courses


Stanford Advisees


All Publications


  • Phase Field Model for Morphological Transition in Nanowire Vapor-Liquid-Solid Growth CRYSTAL GROWTH & DESIGN Wang, Y., McIntyre, P. C., Cai, W. 2017; 17 (4): 2211-2217
  • Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks ACS APPLIED MATERIALS & INTERFACES Tang, K., Meng, A. C., Droopad, R., McIntyre, P. C. 2016; 8 (44): 30601-30607
  • Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks. ACS applied materials & interfaces Tang, K., Meng, A. C., Droopad, R., McIntyre, P. C. 2016: -?

    Abstract

    Intentional oxidation of an As2-decapped (100) In0.57Ga0.43As substrate by additional H2O dosing during initial Al2O3 gate dielectric atomic layer deposition (ALD) increases the interface trap density (Dit), lowers the band edge photoluminescence (PL) intensity, and generates Ga-oxide detected by X-ray photoelectron spectroscopy (XPS). Aberration-corrected high resolution transmission electron microscopy (TEM) reveals formation of an amorphous interfacial layer which is distinct from the Al2O3 dielectric and which is not present without the additional H2O dosing. Observation of a temperature dependent border trap response, associated with the frequency dispersion of the accumulation capacitance and conductance of metal-oxide-semiconductor (MOS) structures, is found to be correlated with the presence of this defective interfacial layer. MOS capacitors prepared with additional H2O dosing show a notable decrease (∼20%) of accumulation dispersion over 5 kHz to 500 kHz when the measurement temperature decreases from room temperature to 77 K, while capacitors prepared with an abrupt Al2O3/InGaAs interface display little change (<2%) with temperature. Similar temperature-dependent border trap response is also observed when the (100) InGaAs surface is treated with a previously reported HCl(aq) wet cleaning procedure prior to Al2O3 ALD. These results point out the sensitivity of the temperature dependence of the border trap response in metal oxide/III-V MOS gate stacks to the presence of processing-induced interface oxide layers, which alter the dynamics of carrier trapping at defects that are not located at the semiconductor interface.

    View details for PubMedID 27758108

  • Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2-RuO2 Alloy Schottky Contacts for Silicon Photoanodes ACS APPLIED MATERIALS & INTERFACES Hendricks, O. L., Scheuermann, A. G., Schmidt, M., Hurley, P. K., McIntyre, P. C., Chidsey, C. E. 2016; 8 (36): 23763-23773

    Abstract

    We synthesized nanoscale TiO2-RuO2 alloys by atomic layer deposition (ALD) that possess a high work function and are highly conductive. As such, they function as good Schottky contacts to extract photogenerated holes from n-type silicon while simultaneously interfacing with water oxidation catalysts. The ratio of TiO2 to RuO2 can be precisely controlled by the number of ALD cycles for each precursor. Increasing the composition above 16% Ru sets the electronic conductivity and the metal work function. No significant Ohmic loss for hole transport is measured as film thickness increases from 3 to 45 nm for alloy compositions ≥ 16% Ru. Silicon photoanodes with a 2 nm SiO2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% Ru exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO2-RuO2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.

    View details for DOI 10.1021/acsami.6b08558

    View details for Web of Science ID 000383412000036

    View details for PubMedID 27548719

  • Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices. ACS applied materials & interfaces Negara, M. A., Kitano, M., Long, R. D., McIntyre, P. C. 2016; 8 (32): 21089-21094

    Abstract

    Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. A uniform distribution of nitrogen across the resulting AlOxNy films is obtained using N2 plasma enhanced atomic layer deposition (ALD). The flat band voltage (Vfb) increases to a significantly more positive value with increasing nitrogen concentration. Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs.

    View details for DOI 10.1021/acsami.6b03862

    View details for PubMedID 27459343

  • Characterization of the photocurrents generated by the laser of atomic force microscopes REVIEW OF SCIENTIFIC INSTRUMENTS Ji, Y., Hui, F., Shi, Y., Iglesias, V., Lewis, D., Niu, J., Long, S., Liu, M., Hofer, A., Frammelsberger, W., Benstetter, G., Scheuermann, A., McIntyre, P. C., Lanza, M. 2016; 87 (8)

    Abstract

    The conductive atomic force microscope (CAFM) has become an essential tool for the nanoscale electronic characterization of many materials and devices. When studying photoactive samples, the laser used by the CAFM to detect the deflection of the cantilever can generate photocurrents that perturb the current signals collected, leading to unreliable characterization. In metal-coated semiconductor samples, this problem is further aggravated, and large currents above the nanometer range can be observed even without the application of any bias. Here we present the first characterization of the photocurrents introduced by the laser of the CAFM, and we quantify the amount of light arriving to the surface of the sample. The mechanisms for current collection when placing the CAFM tip on metal-coated photoactive samples are also analyzed in-depth. Finally, we successfully avoided the laser-induced perturbations using a two pass technique: the first scan collects the topography (laser ON) and the second collects the current (laser OFF). We also demonstrate that CAFMs without a laser (using a tuning fork for detecting the deflection of the tip) do not have this problem.

    View details for DOI 10.1063/1.4960597

    View details for Web of Science ID 000383880100034

    View details for PubMedID 27587127

  • Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates. ACS applied materials & interfaces Zhang, L., Guo, Y., Hassan, V. V., Tang, K., Foad, M. A., Woicik, J. C., Pianetta, P., Robertson, J., McIntyre, P. C. 2016; 8 (29): 19110-19118

    Abstract

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit.

    View details for DOI 10.1021/acsami.6b03331

    View details for PubMedID 27345195

  • Atomic Layer Deposited Corrosion Protection: A Path to Stable and Efficient Photoelectrochemical Cells. journal of physical chemistry letters Scheuermann, A. G., McIntyre, P. C. 2016; 7 (14): 2867-2878

    Abstract

    A fundamental challenge in developing photoelectrochemical cells for the renewable production of solar chemicals and fuels is the simultaneous requirement of efficient light absorption and robust stability under corrosive conditions. Schemes for corrosion protection of semiconductor photoelectrodes such as silicon using deposited layers were proposed and attempted for several decades, but increased operational lifetimes were either insufficient or the resulting penalties for device efficiency were prohibitive. In recent years, advances in atomic layer deposition (ALD) of thin coatings have made novel materials engineering possible, leading to substantial and simultaneous improvements in stability and efficiency of photoelectrochemical cells. The self-limiting, layer-by-layer growth of ALD makes thin films with low pinhole densities possible and may also provide a path to defect control that can generalize this protection technology to a large set of materials necessary to fully realize photoelectrochemical cell technology for artificial photosynthesis.

    View details for DOI 10.1021/acs.jpclett.6b00631

    View details for PubMedID 27359352

  • Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface ACS APPLIED MATERIALS & INTERFACES Winter, R., Shekhter, P., Tang, K., Floreano, L., Verdini, A., McIntyre, P. C., Eizenberg, M. 2016; 8 (26): 16979-16984

    Abstract

    One of the main challenges in the path to incorporating InGaAs based metal-oxide-semiconductor structures in nanoelectronics is the passivation of high-k/InGaAs interfaces. Here, the oxygen scavenging effect of thin Ti layers on high-k/InGaAs gate stacks was studied. Electrical measurements and synchrotron X-ray photoelectron spectroscopy measurements, with in situ metal deposition, were used. Oxygen removal from the InGaAs native oxide surface layer remotely through interposed Al2O3 and HfO2 layers observed. Synchrotron X-ray photoelectron spectroscopy has revealed a decrease in the intensity of InOx features relative to In in InGaAs after Ti deposition. The signal ratio decreases further after annealing. In addition, Ti 2p spectra clearly show oxidation of the thin Ti layer in the ultrahigh vacuum XPS environment. Using capacitance-voltage and conductance-voltage measurements, Pt/Ti/Al2O3/InGaAs and Pt/Al2O3/InGaAs capacitors were characterized both before and after annealing. It was found that the remote oxygen scavenging from the oxide/semiconductor interface using a thin Ti layer can influence the density of interface traps in the high-k/InGaAs interface.

    View details for DOI 10.1021/acsami.6b02957

    View details for Web of Science ID 000379456000053

    View details for PubMedID 27282201

  • Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes ACS APPLIED MATERIALS & INTERFACES Scheuermann, A. G., Lawrence, J. P., Meng, A. C., Tang, K., Hendricks, O. L., Chidsey, C. E., McIntyre, P. C. 2016; 8 (23): 14596-14603

    Abstract

    Atomic layer deposited (ALD) TiO2 protection layers may allow for the development of both highly efficient and stable photoanodes for solar fuel synthesis; however, the very different conductivities and photovoltages reported for TiO2-protected silicon anodes prepared using similar ALD conditions indicate that mechanisms that set these key properties are, as yet, poorly understood. In this report, we study hydrogen-containing annealing treatments and find that postcatalyst-deposition anneals at intermediate temperatures reproducibly yield decreased oxide/silicon interface trap densities and high photovoltage. A previously reported insulator thickness-dependent photovoltage loss in metal-insulator-semiconductor Schottky junction photoanodes is suppressed. This occurs simultaneously with TiO2 crystallization and an increase in its dielectric constant. At small insulator thickness, a record for a Schottky junction photoanode of 623 mV photovoltage is achieved, yielding a photocurrent turn-on at 0.92 V vs NHE or -0.303 V with respect to the thermodynamic potential for water oxidation.

    View details for DOI 10.1021/acsami.6b03688

    View details for Web of Science ID 000378195000038

    View details for PubMedID 27196628

  • Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance ACS APPLIED MATERIALS & INTERFACES Satterthwaite, P. F., Scheuermann, A. G., Hurley, P. K., Chidsey, C. E., McIntyre, P. C. 2016; 8 (20): 13140-13149

    Abstract

    Silicon photoanodes protected by atomic layer deposited (ALD) TiO2 show promise as components of water splitting devices that may enable the large-scale production of solar fuels and chemicals. Minimizing the resistance of the oxide corrosion protection layer is essential for fabricating efficient devices with good fill factor. Recent literature reports have shown that the interfacial SiO2 layer, interposed between the protective ALD-TiO2 and the Si anode, acts as a tunnel oxide that limits hole conduction from the photoabsorbing substrate to the surface oxygen evolution catalyst. Herein, we report a significant reduction of bilayer resistance, achieved by forming stable, ultrathin (<1.3 nm) SiO2 layers, allowing fabrication of water splitting photoanodes with hole conductances near the maximum achievable with the given catalyst and Si substrate. Three methods for controlling the SiO2 interlayer thickness on the Si(100) surface for ALD-TiO2 protected anodes were employed: (1) TiO2 deposition directly on an HF-etched Si(100) surface, (2) TiO2 deposition after SiO2 atomic layer deposition on an HF-etched Si(100) surface, and (3) oxygen scavenging, post-TiO2 deposition to decompose the SiO2 layer using a Ti overlayer. Each of these methods provides a progressively superior means of reliably thinning the interfacial SiO2 layer, enabling the fabrication of efficient and stable water oxidation silicon anodes.

    View details for DOI 10.1021/acsami.6b03029

    View details for Web of Science ID 000376825800069

    View details for PubMedID 27096845

  • Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(001) interfaces APPLIED SURFACE SCIENCE Sardashti, K., Hu, K., Tang, K., Park, S., Kim, H., Madisetti, S., McIntyre, P., Oktyabrsky, S., Siddiqui, S., Sahu, B., Yoshida, N., Kachian, J., Kummel, A. 2016; 366: 455-463
  • Spontaneous, Defect-Free Kinking via Capillary Instability during Vapor-Liquid-Solid Nanowire Growth. Nano letters Li, Y., Wang, Y., Ryu, S., Marshall, A. F., Cai, W., McIntyre, P. C. 2016; 16 (3): 1713-1718

    Abstract

    Kinking, a common anomaly in nanowire (NW) vapor-liquid-solid (VLS) growth, represents a sudden change of the wire's axial growth orientation. This study focuses on defect-free kinking during germanium NW VLS growth, after nucleation on a Ge (111) single crystal substrate, using Au-Ge catalyst liquid droplets of defined size. Statistical analysis of the fraction of kinked NWs reveals the dependence of kinking probability on the wire diameter and the growth temperature. The morphologies of kinked Ge NWs studied by electron microscopy show two distinct, defect-free, kinking modes, whose underlying mechanisms are explained with the help of 3D multiphase field simulations. Type I kinking, in which the growth axis changes from vertical [111] to ⟨110⟩, was observed in Ge NWs with a nominal diameter of ∼20 nm. This size coincides with a critical diameter at which a spontaneous transition from ⟨111⟩ to ⟨110⟩ growth occurs in the phase field simulations. Larger diameter NWs only exhibit Type II kinking, in which the growth axis changes from vertical [111] directly to an inclined ⟨111⟩ axis during the initial stages of wire growth. This is caused by an error in sidewall facet development, which produces a shrinkage in the area of the (111) growth facet with increasing NW length, causing an instability of the Au-Ge liquid droplet at the tip of the NW.

    View details for DOI 10.1021/acs.nanolett.5b04633

    View details for PubMedID 26837774

  • Nitride passivation of the interface between high-k dielectrics and SiGe APPLIED PHYSICS LETTERS Sardashti, K., Hu, K., Tang, K., Madisetti, S., McIntyre, P., Oktyabrsky, S., Siddiqui, S., Sahu, B., Yoshida, N., Kachian, J., Dong, L., Fruhberger, B., Kummel, A. C. 2016; 108 (1)

    View details for DOI 10.1063/1.4939460

    View details for Web of Science ID 000374313000016

  • Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes ENERGY & ENVIRONMENTAL SCIENCE Scheuermann, A. G., Kemp, K. W., Tang, K., Lu, D. Q., Satterthwaite, P. F., Ito, T., Chidsey, C. E., McIntyre, P. C. 2016; 9 (2): 504-516

    View details for DOI 10.1039/c5ee02484f

    View details for Web of Science ID 000369744500017

  • From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires NANO LETTERS Potts, H., Friedl, M., Amaduzzi, F., Tang, K., Tuetuencueoglu, G., Matteini, F., Llado, E. A., McIntyre, P. C., Fontcuberta i Morral, A. 2016; 16 (1): 637-643
  • Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes NATURE MATERIALS Scheuermann, A. G., Lawrence, J. P., Kemp, K. W., Ito, T., Walsh, A., Chidsey, C. E., Hurley, P. K., McIntyre, P. C. 2016; 15 (1): 99-?

    View details for DOI 10.1038/NMAT4451

    View details for Web of Science ID 000366690600028

    View details for PubMedID 26480231

  • Understanding Photovoltage in Insulator-Protected Water Oxidation Half-Cells JOURNAL OF THE ELECTROCHEMICAL SOCIETY Scheuermann, A. G., Chidsey, C. E., McIntyre, P. C. 2016; 163 (3): H192-H200
  • Border trap reduction in Al2O3/InGaAs gate stacks APPLIED PHYSICS LETTERS Tang, K., Winter, R., Zhang, L., Droopad, R., Eizenberg, M., McIntyre, P. C. 2015; 107 (20)

    View details for DOI 10.1063/1.4936100

    View details for Web of Science ID 000365688700032

  • The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces JOURNAL OF CHEMICAL PHYSICS Kent, T., Tang, K., Chobpattana, V., Negara, M. A., Edmonds, M., Mitchell, W., Sahu, B., Galatage, R., Droopad, R., McIntyre, P., Kummel, A. C. 2015; 143 (16)

    View details for DOI 10.1063/1.4934656

    View details for Web of Science ID 000364235800056

    View details for PubMedID 26520547

  • Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures ACS APPLIED MATERIALS & INTERFACES Zhang, L., Li, H., Guo, Y., Tang, K., Woicik, J., Robertson, J., McIntyre, P. C. 2015; 7 (37): 20499-20506

    View details for DOI 10.1021/acsami.5b06087

    View details for Web of Science ID 000361931600002

    View details for PubMedID 26334784

  • Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing JOURNAL OF APPLIED PHYSICS Winter, R., Krylov, I., Cytermann, C., Tang, K., Ahn, J., McIntyre, P. C., Eizenberg, M. 2015; 118 (5)

    View details for DOI 10.1063/1.4928158

    View details for Web of Science ID 000359376700037

  • Ultrafast Carrier Dynamics of a Photo-Excited Germanium Nanowire-Air Metamaterial ACS PHOTONICS Li, Y., Clady, R., Marshall, A. F., Park, J., Thombare, S. V., Chan, G., Schmidt, T. W., Brongersma, M. L., McIntyre, P. C. 2015; 2 (8): 1091-1098
  • Crystallization Pathway for Metastable Hexagonal Close-Packed Gold in Germanium Nanowire Catalysts CRYSTAL GROWTH & DESIGN Marshall, A. F., Thombare, S. V., McIntyre, P. C. 2015; 15 (8): 3734-3739
  • Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition ACS APPLIED MATERIALS & INTERFACES Zhernokletov, D. M., Negara, M. A., Long, R. D., Aloni, S., Nordlund, D., McIntyre, P. C. 2015; 7 (23): 12774-12780

    Abstract

    We correlate interfacial defect state densities with the chemical composition of the Al2O3/GaN interface in metal-oxide-semiconductor (MOS) structures using synchrotron photoelectron emission spectroscopy (PES), cathodoluminescence and high-temperature capacitance-voltage measurements. The influence of the wet chemical pretreatments involving (1) HCl+HF etching or (2) NH4OH(aq) exposure prior to atomic layer deposition (ALD) of Al2O3 were investigated on n-type GaN (0001) substrates. Prior to ALD, PES analysis of the NH4OH(aq) treated surface shows a greater Ga2O3 component compared to either HCl+HF treated or as-received surfaces. The lowest surface concentration of oxygen species is detected on the acid etched surface, whereas the NH4OH treated sample reveals the lowest carbon surface concentration. Both surface pretreatments improve electrical characteristics of MOS capacitors compared to untreated samples by reducing the Al2O3/GaN interface state density. The lowest interfacial trap density at energies in the upper band gap is detected for samples pretreated with NH4OH. These results are consistent with cathodoluminescence data indicating that the NH4OH treated samples show the strongest band edge emission compared to as-received and acid etched samples. PES results indicate that the combination of reduced carbon contamination while maintaining a Ga2O3 interfacial layer by NH4OH(aq) exposure prior to ALD results in fewer interface traps after Al2O3 deposition on the GaN substrate.

    View details for DOI 10.1021/acsami.5b01600

    View details for Web of Science ID 000356753500053

    View details for PubMedID 25988586

  • A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors IEEE TRANSACTIONS ON ELECTRON DEVICES Taur, Y., Chen, H., Xie, Q., Ahn, J., McIntyre, P. C., Lin, D., Vais, A., Veksler, D. 2015; 62 (3): 813-820
  • Control of InGaAs and InAs facets using metal modulation epitaxy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Wistey, M. A., Baraskar, A. K., Singisetti, U., Burek, G. J., Shin, B., Kim, E., McIntyre, P. C., Gossard, A. C., Rodwell, M. J. 2015; 33 (1)

    View details for DOI 10.1116/1.4905497

    View details for Web of Science ID 000348915500024

  • Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition ACS APPLIED MATERIALS & INTERFACES Byun, Y., Choi, S., An, Y., McIntyre, P. C., Kim, H. 2014; 6 (13): 10482-10488

    Abstract

    We investigated ZnO surface passivation of a GaAs (100) substrate using an atomic layer deposition (ALD) process to prepare an ultrathin ZnO layer prior to ALD-HfO2 gate dielectric deposition. Significant suppression of both Ga-O bond formation near the interface and As segregation at the interface was achieved. In addition, this method effectively suppressed the trapping of carriers in oxide defects with energies near the valence band edge of GaAs. According to electrical analyses of the interface state response on p- and n-type GaAs substrates, the interface states in the bottom half of the GaAs band gap were largely removed. However, the interface trap response in the top half of the band gap increased somewhat for the ZnO-passivated surface.

    View details for DOI 10.1021/am502048d

    View details for Web of Science ID 000338979900067

    View details for PubMedID 24911531

  • A three-dimensional phase field model for nanowire growth by the vapor-liquid-solid mechanism MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING Wang, Y., Ryu, S., McIntyre, P. C., Cai, W. 2014; 22 (5)
  • Ultrafast electron and phonon response of oriented and diameter-controlled germanium nanowire arrays. Nano letters Li, Y., Clady, R., Park, J., Thombare, S. V., Schmidt, T. W., Brongersma, M. L., McIntyre, P. C. 2014; 14 (6): 3427-3431

    Abstract

    Carrier and phonon dynamics in dense arrays of aligned, single-crystal Ge nanowires (NWs) of controlled diameter are investigated by ultrafast optical pump-probe measurements, effective medium calculations, and elasticity analysis. Both a pronounced induced absorption and the amplitude and spectral range of Fabry-Perot oscillations observed in the probe signal are predicted for the NW array/air metamaterial by effective medium calculations. Detected temporal oscillations of reflectivity are consistent with excitation of radial breathing mode acoustic phonons by the intense pump pulse.

    View details for DOI 10.1021/nl500953p

    View details for PubMedID 24797453

  • The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack APPLIED PHYSICS LETTERS Winter, R., Krylov, I., Ahn, J., McIntyre, P. C., Eizenberg, M. 2014; 104 (20)

    View details for DOI 10.1063/1.4879246

    View details for Web of Science ID 000337140800031

  • Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Chen, H., Ahn, J., McIntyre, P. C., Taur, Y. 2014; 32 (3)

    View details for DOI 10.1116/1.4864618

    View details for Web of Science ID 000337061900011

  • Subcutaneous oxidation of In0.53Ga0.47As(100) through ultra-thin atomic layer deposited Al2O3 APPLIED PHYSICS LETTERS Ahn, J., McIntyre, P. C. 2013; 103 (25)

    View details for DOI 10.1063/1.4850520

    View details for Web of Science ID 000329973800018

  • Kinetics of germanium nanowire growth by the vapor-solid-solid mechanism with a Ni-based catalyst APL MATERIALS Thombare, S. V., Marshall, A. F., McIntyre, P. C. 2013; 1 (6)

    View details for DOI 10.1063/1.4833935

    View details for Web of Science ID 000332280700002

  • The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY Hurley, P. K., O'Connor, E., Djara, V., Monaghan, S., Povey, I. M., Long, R. D., Sheehan, B., Lin, J., McIntyre, P. C., Brennan, B., Wallace, R. M., Pemble, M. E., Cherkaoui, K. 2013; 13 (4): 429-443
  • Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen APPLIED PHYSICS LETTERS Long, R. D., Jackson, C. M., Yang, J., Hazeghi, A., Hitzman, C., Majety, S., Arehart, A. R., Nishi, Y., Ma, T. P., Ringel, S. A., McIntyre, P. C. 2013; 103 (20)

    View details for DOI 10.1063/1.4827102

    View details for Web of Science ID 000327818700027

  • Comparison of Bulk-Oxide Trap Models: Lumped Versus Distributed Circuit IEEE TRANSACTIONS ON ELECTRON DEVICES Chen, H., Ahn, J., McIntyre, P. C., Taur, Y. 2013; 60 (11): 3920-3924
  • Enhanced performance and endurance of nano-porous platinum solid oxide fuel cell electrodes by oxygen partial pressure cycling MRS COMMUNICATIONS Ginestra, C. N., McIntyre, P. C. 2013; 3 (3): 123-128
  • Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces APPLIED PHYSICS LETTERS Ahn, J., Kent, T., Chagarov, E., Tang, K., Kummel, A. C., McIntyre, P. C. 2013; 103 (7)

    View details for DOI 10.1063/1.4818330

    View details for Web of Science ID 000323769000012

  • Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metal-insulator-silicon anodes ENERGY & ENVIRONMENTAL SCIENCE Scheuermann, A. G., Prange, J. D., Gunji, M., Chidsey, C. E., McIntyre, P. C. 2013; 6 (8): 2487-2496

    View details for DOI 10.1039/c3ee41178h

    View details for Web of Science ID 000321983800022

  • Effects of surface oxide formation on germanium nanowire band-edge photoluminescence APPLIED PHYSICS LETTERS Hashemi, F. S., Thombare, S., Fontcuberta i Morral, A., Brongersma, M. L., McIntyre, P. C. 2013; 102 (25)

    View details for DOI 10.1063/1.4812334

    View details for Web of Science ID 000321145200022

  • EOT Scaling of TiO2/Al2O3 on Germanium pMOSFETs and Impact of Gate Metal Selection IEEE ELECTRON DEVICE LETTERS Zhang, L., Gunji, M., Thombare, S., McIntyre, P. C. 2013; 34 (6): 732-734
  • New method for determining flat-band voltage in high mobility semiconductors JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Winter, R., Ahn, J., McIntyre, P. C., Eizenberg, M. 2013; 31 (3)

    View details for DOI 10.1116/1.4802478

    View details for Web of Science ID 000320130500040

  • Effect and extraction of series resistance in Al2O3-InGaAs MOS with bulk-oxide trap ELECTRONICS LETTERS Yu, B., Yuan, Y., Chen, H., Ahn, J., McIntyre, P. C., Taur, Y. 2013; 49 (7): 492-493
  • Enhanced Performance and Endurance of -Porous Platinum Solid Oxide Fuel Cell Electrodes by Oxygen Partial Pressure Cycling MRS Comm. Ginestra, C., N., McIntyre, P., C. 2013

    View details for DOI 10.1557/mrc.2013.25

  • New Method for Determining Flat-Band Voltage in High Mobility Semiconductors J. Vac. Sci. Technol. B Winter, R., Ahn, J., McIntyre, P., C., Eizenberg, M. 2013; 31: 30604
  • Arsenic Decapping and Pre-ALD Trimethylaluminum Passivation of Al2O3/InGaAs(100) Interfaces Appl. Phys. Lett. Ahn, J., Kent, T., Chagarov, E., Tang, K., Kummel, A., C., McIntyre, P., C. 2013; 103: 071602-1-4
  • ALD-TiO2 Preparation and Characterization for Metal-Insulator-Silicon Photoelectrochemical Applications 9th International Symposium on Atomic Layer Deposition Applications held during the 224th Meeting of the Electrochemical-Society (ECS) Scheuermann, A. G., Lawrence, J. P., Gunji, M., Chidsey, C. E., McIntyre, P. C. ELECTROCHEMICAL SOC INC. 2013: 75–86
  • EOT Scaling of TiO2/Al2O3 on Germanium pMOSFETs and Impact of Gate Metal Selection IEEE Electron Dev. Lett. Zhang, L., Gunji, M., Thombare, S., McIntyre, P., C. 2013; 34: 732-34
  • Effect and Extraction of Series Resistance in Al2O3-InGaAs MOS with Bulk-Oxide Trap Electronics Lett. Yu, B., Yuan, Y., Chen, H., P., Ahn, J., McIntyre, P., C., Taur, Y. 2013; 49: 492-93
  • Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN APPLIED PHYSICS LETTERS Long, R. D., Hazeghi, A., Gunji, M., Nishi, Y., McIntyre, P. C. 2012; 101 (24)

    View details for DOI 10.1063/1.4769827

    View details for Web of Science ID 000312490000025

  • Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation NANOTECHNOLOGY Gunji, M., Thombare, S. V., Hu, S., McIntyre, P. C. 2012; 23 (38)

    Abstract

    We report on the directed synthesis of germanium oxide (GeO(x)) nanowires (NWs) by locally catalyzed thermal oxidation of aligned arrays of gold catalyst-tipped germanium NWs. During oxygen anneals conducted above the Au-Ge binary eutectic temperature (T > 361 °C), one-dimensional oxidation of as-grown Ge NWs occurs by diffusion of Ge through the Au-Ge catalyst droplet, in the presence of an oxygen containing ambient. Elongated GeO(x) wires grow from the liquid catalyst tip, consuming the adjoining Ge NWs as they grow. The oxide NWs' diameter is dictated by the catalyst diameter and their alignment generally parallels that of the growth direction of the initial Ge NWs. Growth rate comparisons reveal a substantial oxidation rate enhancement in the presence of the Au catalyst. Statistical analysis of GeO(x) nanowire growth by ex situ transmission electron microscopy and scanning electron microscopy suggests a transition from an initial, diameter-dependent kinetic regime, to diameter-independent wire growth. This behavior suggests the existence of an incubation time for GeO(x) NW nucleation at the start of vapor-liquid-solid oxidation.

    View details for DOI 10.1088/0957-4484/23/38/385603

    View details for Web of Science ID 000308813100019

    View details for PubMedID 22947505

  • Interface-State Modeling of Al2O3-InGaAs MOS From Depletion to Inversion IEEE TRANSACTIONS ON ELECTRON DEVICES Chen, H., Yuan, Y., Yu, B., Ahn, J., McIntyre, P. C., Asbeck, P. M., Rodwell, M. J., Taur, Y. 2012; 59 (9): 2383-2389
  • Size effects in vapor-solid-solid Ge nanowire growth with a Ni-based catalyst JOURNAL OF APPLIED PHYSICS Thombare, S. V., Marshall, A. F., McIntyre, P. C. 2012; 112 (5)

    View details for DOI 10.1063/1.4749797

    View details for Web of Science ID 000309072200138

  • A Distributed Bulk-Oxide Trap Model for Al2O3 InGaAs MOS Devices IEEE TRANSACTIONS ON ELECTRON DEVICES Yuan, Y., Yu, B., Ahn, J., McIntyre, P. C., Asbeck, P. M., Rodwell, M. J., Taur, Y. 2012; 59 (8): 2100-2106
  • Direct-gap photoluminescence from germanium nanowires PHYSICAL REVIEW B Kawamura, Y., Huang, K. C., Thombare, S. V., Hu, S., Gunji, M., Ishikawa, T., Brongersma, M. L., Itoh, K. M., McIntyre, P. C. 2012; 86 (3)
  • Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices MATERIALS Long, R. D., McIntyre, P. C. 2012; 5 (7): 1297-1335

    View details for DOI 10.3390/ma5071297

    View details for Web of Science ID 000306750400011

  • Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors Paterson, G. W., Bentley, S. J., Holland, M. C., Thayne, I. G., Ahn, J., Long, R. D., McIntyre, P. C., Long, A. R. AMER INST PHYSICS. 2012

    View details for DOI 10.1063/1.4720940

    View details for Web of Science ID 000305363700119

  • Thermal Stability and Surface Passivation of Ge Nanowires Coated by Epitaxial SiGe Shells NANO LETTERS Hu, S., Kawamura, Y., Huang, K. C., Li, Y., Marshall, A. F., Itoh, K. M., Brongersma, M. L., McIntyre, P. C. 2012; 12 (3): 1385-1391

    Abstract

    Epitaxial growth of a highly strained, coherent SiGe alloy shell around a Ge nanowire core is investigated as a method to achieve surface passivation and carrier confinement, important in realizing nanowire devices. The high photoluminescence intensity observed from the core-shell nanowires with spectral features similar to that of bulk Ge indicates effective surface passivation. Thermal stability of these core-shell heterostructures has been systematically investigated, with a method demonstrated to avoid misfit strain relaxation during postgrowth annealing.

    View details for DOI 10.1021/nl204053w

    View details for Web of Science ID 000301406800046

    View details for PubMedID 22364183

  • Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures JOURNAL OF APPLIED PHYSICS Hu, S., McIntyre, P. C. 2012; 111 (4)

    View details for DOI 10.1063/1.3682110

    View details for Web of Science ID 000300948600130

  • Undoped Ge Core-Si(Ge) Shell Nanowires: Synthesis, Local Composition and Strain Hu, S., Goldthorpe, I., A., Marshall, A., F., McIntyre, P., C. 2012
  • Mechanism of Dangling Bond Elimination on As-rich InGaAs Surface IEEE International Electron Devices Meeting (IEDM) Melitz, W., Chagarov, E., Kent, T., Droopad, R., Ahn, J., Long, R., McIntyre, P. C., Kummel, A. C. IEEE. 2012
  • Undoped Ge Core-Si(Ge) Shell Nanowires: Synthesis, Local Composition and Strain Characterization 5th SiGe, Ge, and Related Compounds - Materials, Processing and Devices Symposium held at the 220th Meeting of the Electrochemical-Society (ECS) Hu, S., Goldthorpe, I. A., Marshall, A. F., McIntyre, P. C. ELECTROCHEMICAL SOC INC. 2012: 635–43
  • In-situ As-2 decapping and atomic layer deposition of Al2O3 on n-InGaAs(100) 4th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications held at the 221st Meeting of the Electrochemical-Society (ECS) as Symposium E2 Ahn, J., Shin, B., McIntyre, P. C. ELECTROCHEMICAL SOC INC. 2012: 183–88

    View details for DOI 10.1149/1.3701133

    View details for Web of Science ID 000316890000021

  • In-Situ As2 Decapping and Atomic Layer Deposition of Al2O3 on n-InGaAs(100) Ahn, J., Shin, B., McIntyre, P., C. 2012
  • Mechanism of Dangling Bond Elimination on As-rich InGaAs Surface Melitz, W., Chagarov, E., Kent, T., Kummel, A., C., Droopad, R., Ahn, J., McIntyre, P. 2012
  • Interface-State Modeling of Al2O3–InGaAs MOS From Depletion to Inversion IEEE Trans. Electron Dev. Chen, H., P., Yuan, Y., Yu, B., Ahn, J., McIntyre, P., C., Asbeck, P., M. 2012; 59: 2383-89
  • Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011) JOURNAL OF THE ELECTROCHEMICAL SOCIETY Long, R. D., Shin, B., Monaghan, S., Cherkaoui, K., Cagnon, J., Stemmer, S., McIntyre, P. C., Hurley, P. K. 2012; 159 (6): S17-S17
  • Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices APPLIED PHYSICS LETTERS Ahn, J., Geppert, I., Gunji, M., Holland, M., Thayne, I., Eizenberg, M., McIntyre, P. C. 2011; 99 (23)

    View details for DOI 10.1063/1.3662966

    View details for Web of Science ID 000298006100054

  • Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties JOURNAL OF APPLIED PHYSICS Swaminathan, S., Sun, Y., Pianetta, P., McIntyre, P. C. 2011; 110 (9)

    View details for DOI 10.1063/1.3647761

    View details for Web of Science ID 000297062100087

  • Introduction JOURNAL OF MATERIALS RESEARCH McIntyre, P. C., Schmidt, V., Picraux, T., Quitoriano, N., Riel, H., Thelander, C., Thompson, C. 2011; 26 (17): 2125-2126
  • Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect ADVANCED FUNCTIONAL MATERIALS Zednik, R. J., Varatharajan, A., Oliver, M., Valanoor, N., McIntyre, P. C. 2011; 21 (16): 3104-3110
  • Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation NATURE MATERIALS Chen, Y. W., Prange, J. D., Duehnen, S., Park, Y., Gunji, M., Chidsey, C. E., McIntyre, P. C. 2011; 10 (7): 539-544

    Abstract

    A leading approach for large-scale electrochemical energy production with minimal global-warming gas emission is to use a renewable source of electricity, such as solar energy, to oxidize water, providing the abundant source of electrons needed in fuel synthesis. We report corrosion-resistant, nanocomposite anodes for the oxidation of water required to produce renewable fuels. Silicon, an earth-abundant element and an efficient photovoltaic material, is protected by atomic layer deposition (ALD) of a highly uniform, 2 nm thick layer of titanium dioxide (TiO(2)) and then coated with an optically transmitting layer of a known catalyst (3 nm iridium). Photoelectrochemical water oxidation was observed to occur below the reversible potential whereas dark electrochemical water oxidation was found to have low-to-moderate overpotentials at all pH values, resulting in an inferred photovoltage of ~550 mV. Water oxidation is sustained at these anodes for many hours in harsh pH and oxidative environments whereas comparable silicon anodes without the TiO(2) coating quickly fail. The desirable electrochemical efficiency and corrosion resistance of these anodes is made possible by the low electron-tunnelling resistance (<0.006 Ω cm(2) for p(+)-Si) and uniform thickness of atomic-layer deposited TiO(2).

    View details for DOI 10.1038/NMAT3047

    View details for Web of Science ID 000291969500020

    View details for PubMedID 21685904

  • III-V nMOSFETs - Some issues associated with roadmap worthiness (invited) 17th International Conference on Insulating Films on Semiconductors Thayne, I., Bentley, S., Holland, M., Jansen, W., Li, X., Macintyre, D., Thoms, S., Shin, B., Ahn, J., McIntyre, P. ELSEVIER SCIENCE BV. 2011: 1070–75
  • A Distributed Model for Border Traps in Al2O3 - InGaAs MOS Devices IEEE ELECTRON DEVICE LETTERS Yuan, Y., Wang, L., Yu, B., Shin, B., Ahn, J., McIntyre, P. C., Asbeck, P. M., Rodwell, M. J., Taur, Y. 2011; 32 (4): 485-487
  • Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric IEEE ELECTRON DEVICE LETTERS Bentley, S. J., Holland, M., Li, X., Paterson, G. W., Zhou, H., Ignatova, O., Macintyre, D., Thoms, S., Asenov, A., Shin, B., Ahn, J., McIntyre, P. C., Thayne, I. G. 2011; 32 (4): 494-496
  • Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics APPLIED PHYSICS LETTERS Kim, E. J., Shandalov, M., Saraswat, K. C., McIntyre, P. C. 2011; 98 (3)

    View details for DOI 10.1063/1.3527977

    View details for Web of Science ID 000286471100026

  • Morphological Stability of Mesoporous Pt Thin Films Deposited via Nanosphere Lithography on YSZ (vol 14, pg B96, 2011) ELECTROCHEMICAL AND SOLID STATE LETTERS Lin, A. Y., McIntyre, P. C. 2011; 14 (11): S9-S9
  • Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation JOURNAL OF APPLIED PHYSICS Gunji, M., Marshall, A. F., McIntyre, P. C. 2011; 109 (1)

    View details for DOI 10.1063/1.3506420

    View details for Web of Science ID 000286219300130

  • Morphological Stability of Mesoporous Pt Thin Films Deposited via Nanosphere Lithography on YSZ ELECTROCHEMICAL AND SOLID STATE LETTERS Lin, A. Y., McIntyre, P. C. 2011; 14 (10): B96-B99

    View details for DOI 10.1149/1.3609257

    View details for Web of Science ID 000295211600008

  • Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors JOURNAL OF THE ELECTROCHEMICAL SOCIETY Long, R. D., Shin, B., Monaghan, S., Cherkaoui, K., Cagnon, J., Stemmer, S., McIntyre, P. C., Hurley, P. K. 2011; 158 (5): G103-G107

    View details for DOI 10.1149/1.3545799

    View details for Web of Science ID 000288867700071

  • The changing landscape of conservation science funding in the United States CONSERVATION LETTERS Bakker, V. J., Baum, J. K., Brodie, J. F., Salomon, A. K., Dickson, B. G., Gibbs, H. K., Jensen, O. P., McIntyre, P. B. 2010; 3 (6): 435-444
  • Modified phonon confinement model for Raman spectroscopy of nanostructured materials PHYSICAL REVIEW B Roodenko, K., Goldthorpe, I. A., McIntyre, P. C., Chabal, Y. J. 2010; 82 (11)
  • Hexagonal Close-Packed Structure of Au Nanocatalysts Solidified after Ge Nanowire Vapor-Liquid-Solid Growth NANO LETTERS Marshall, A. F., Goldthorpe, I. A., Adhikari, H., Koto, M., Wang, Y., Fu, L., Olsson, E., McIntyre, P. C. 2010; 10 (9): 3302-3306

    Abstract

    We report that approximately 10% of the Au catalysts that crystallize at the tips of Ge nanowires following growth have the close-packed hexagonal crystal structure rather than the equilibrium face-centered-cubic structure. Transmission electron microscopy results using aberration-corrected imaging, and diffraction and compositional analyses, confirm the hexagonal phase in these 40-50 nm particles. Reports of hexagonal close packing in Au, even in nanoparticle form, are rare, and the observations suggest metastable pathways for the crystallization process. These results bring new considerations to the stabilization of the liquid eutectic alloy at low temperatures that allows for vapor-liquid-solid growth of high quality, epitaxial Ge nanowires below the eutectic temperature.

    View details for DOI 10.1021/nl100913d

    View details for Web of Science ID 000281498200014

    View details for PubMedID 20687570

  • High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure APPLIED PHYSICS LETTERS Ko, C., Shandalov, M., McIntyre, P. C., Ramanathan, S. 2010; 97 (8)

    View details for DOI 10.1063/1.3482940

    View details for Web of Science ID 000281306500032

  • Interface-controlled layer exchange in metal-induced crystallization of germanium thin films APPLIED PHYSICS LETTERS Hu, S., Marshall, A. F., McIntyre, P. C. 2010; 97 (8)

    View details for DOI 10.1063/1.3480600

    View details for Web of Science ID 000281306500034

  • Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001) APPLIED PHYSICS LETTERS Shin, B., Clemens, J. B., Kelly, M. A., Kummel, A. C., McIntyre, P. C. 2010; 96 (25)

    View details for DOI 10.1063/1.3452336

    View details for Web of Science ID 000279168100045

  • Gold-Catalyzed Vapor-Liquid-Solid Germanium-Nanowire Nucleation on Porous Silicon SMALL Koto, M., Marshall, A. F., Goldthorpe, I. A., McIntyre, P. C. 2010; 6 (9): 1032-1037

    Abstract

    Nanoporous Si(111) substrates are used to study the effects of Au catalyst coarsening on the nucleation of vapor-liquid-solid-synthesized epitaxial Ge nanowires (NWs) at temperatures less than 400 degrees C. Porous Si substrates, with greater effective interparticle separations for Au surface diffusion than nonporous Si, inhibit catalyst coarsening and agglomeration prior to NW nucleation. This greatly reduces the variation in wire diameter and length and increases the yield compared to nucleation on identically prepared nonporous Si substrates.

    View details for DOI 10.1002/smll.200901764

    View details for Web of Science ID 000278437500008

    View details for PubMedID 20411571

  • Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates APPLIED PHYSICS LETTERS Shin, B., Weber, J. R., Long, R. D., Hurley, P. K., Van de Walle, C. G., McIntyre, P. C. 2010; 96 (15)

    View details for DOI 10.1063/1.3399776

    View details for Web of Science ID 000276794100054

  • Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices APPLIED PHYSICS LETTERS Swaminathan, S., Shandalov, M., Oshima, Y., McIntyre, P. C. 2010; 96 (8)

    View details for DOI 10.1063/1.3313946

    View details for Web of Science ID 000275027200064

  • Group IV semiconductor nanowire arrays: epitaxy in different contexts SEMICONDUCTOR SCIENCE AND TECHNOLOGY McIntyre, P. C., Adhikari, H., Goldthorpe, I. A., Hu, S., Leu, P. W., Marshall, A. F., Chidsey, C. E. 2010; 25 (2)
  • Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals APPLIED PHYSICS LETTERS Kim, E. J., Wang, L., Asbeck, P. M., Saraswat, K. C., McIntyre, P. C. 2010; 96 (1)

    View details for DOI 10.1063/1.3281027

    View details for Web of Science ID 000273473200037

  • Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics ELECTROCHEMICAL AND SOLID STATE LETTERS Swaminathan, S., McIntyre, P. C. 2010; 13 (9): G79-G82

    View details for DOI 10.1149/1.3457480

    View details for Web of Science ID 000279806700016

  • III-V MOSFETs: Scaling Laws, Scaling Limits, Fabrication Processes 22nd International Conference on Indium Phosphide and Related Materials Rodwell, M. J., Singisetti, U., Wistey, M., Burek, G. J., Carter, A., Baraskar, A., Law, J., Thibeault, B. J., Kim, E. J., Shin, B., Lee, Y., Steiger, S., Lee, S., Ryu, H., Tan, Y., Hegde, G., Wang, L., Chagarov, E., Gossard, A. C., FRENSLEY, W., Kummel, A., Palmstrom, C., McIntyre, P. C., Boykin, T., Klimek, G., Asbeck, P. IEEE. 2010
  • In Situ XPS in Atomic Layer Deposition of Oxides on Ge (100) 4th SiGe, Ge, and Related Compounds - Materials, Processing and Devices Symposium held at the 218th Meeting of the Electrochemical-Society (ECS) Swaminathan, S., McIntyre, P. C. ELECTROCHEMICAL SOC INC. 2010: 455–62

    View details for DOI 10.1149/1.3487576

    View details for Web of Science ID 000314957600047

  • DESIGN AND GROWTH OF III-V NANOWIRE SOLAR CELL ARRAYS ON LOW COST SUBSTRATES 35th IEEE Photovoltaic Specialists Conference Gu, A., Huo, Y., Hu, S., Sarmiento, T., Pickett, E., Liang, D., Li, S., Lin, A., Thombare, S., Yu, Z., Fan, S., McIntyre, P., Cui, Y., Harris, J. IEEE. 2010: 2034–2037
  • FACETING AND DISORDER IN NANOWIRE SOLAR CELL ARRAYS 35th IEEE Photovoltaic Specialists Conference Pickett, E., Gu, A., Huo, Y., Garnett, E., Hu, S., Sarmiento, T., Thombare, S., Liang, D., Li, S., Cui, Y., McGehee, M., McIntyre, P., Harris, J. IEEE. 2010: 1848–1853
  • Gold-Catalyzed Vapor–Liquid–Solid Germanium-Nanowire Nucleation on Porous Silicon Small Koto, M., Marshall, A., F., Goldthorpe, I., A., McIntyre, P., C. 2010; 6: 1032-37
  • Arsenic Decapping and Half-Cycle Reactions during Atomic Layer Deposition of Al2O3 on In0.53Ga0.47As (001) Appl. Phys. Lett. Shin, B., Clemens, J., B., Kelly, M., A., Kummel, A., C., McIntyre, P., C. 2010; 96: 252907-1-3
  • In Situ XPS in Atomic Layer Deposition of Oxides on Ge (100) Swaminathan, S., McIntyre, P., C. 2010
  • Atomic Layer Deposited Hafnium Oxide Gate Dielectrics for Charge-Based Biosensors ELECTROCHEMICAL AND SOLID STATE LETTERS Chen, Y. W., Liu, M., Kaneko, T., McIntyre, P. C. 2010; 13 (3): G29-G32

    View details for DOI 10.1149/1.3280224

    View details for Web of Science ID 000273690400014

  • Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation JOURNAL OF APPLIED PHYSICS Kim, E. J., Chagarov, E., Cagnon, J., Yuan, Y., Kummel, A. C., Asbeck, P. M., Stemmer, S., Saraswat, K. C., McIntyre, P. C. 2009; 106 (12)

    View details for DOI 10.1063/1.3266006

    View details for Web of Science ID 000273216500098

  • Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films IEEE ELECTRON DEVICE LETTERS Panzer, M. A., Shandalov, M., Rowlette, J. A., Oshima, Y., Chen, Y. W., McIntyre, P. C., Goodson, K. E. 2009; 30 (12): 1269-1271
  • Inhibiting Strain-Induced Surface Roughening: Dislocation-Free Ge/Si and Ge/SiGe Core-Shell Nanowires NANO LETTERS Goldthorpe, I. A., Marshall, A. F., McIntyre, P. C. 2009; 9 (11): 3715-3719

    Abstract

    Elastic strain is a critical factor in engineering the electronic behavior of core-shell semiconductor nanowires and provides the driving force for undesirable surface roughening and defect formation. We demonstrate two independent strategies, chlorine surface passivation and growth of nanowires with low-energy sidewall facets, to avoid strain-induced surface roughening that promotes dislocation nucleation in group IV core-shell nanowires. Metastably strained, dislocation-free, core-shell nanowires are obtained, and axial strains are measured and compared to elasticity model predictions.

    View details for DOI 10.1021/nl9018148

    View details for Web of Science ID 000271566400009

    View details for PubMedID 19795838

  • In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth IEEE ELECTRON DEVICE LETTERS Singisetti, U., Wistey, M. A., Burek, G. J., Baraskar, A. K., Thibeault, B. J., Gossard, A. C., Rodwell, M. J., Shin, B., Kim, E. J., McIntyre, P. C., Yu, B., Yuan, Y., Wang, D., Taur, Y., Asbeck, P., Lee, Y. 2009; 30 (11): 1128-1130
  • Size-dependent polymorphism in HfO2 nanotubes and nanoscale thin films JOURNAL OF APPLIED PHYSICS Shandalov, M., McIntyre, P. C. 2009; 106 (8)

    View details for DOI 10.1063/1.3243077

    View details for Web of Science ID 000271358100097

  • Single-crystal germanium layers grown on silicon by nanowire seeding NATURE NANOTECHNOLOGY Hu, S., Leu, P. W., Marshall, A. F., McIntyre, P. C. 2009; 4 (10): 649-653

    Abstract

    Three-dimensional integration and the combination of different material systems are central themes of electronics research. Recently, as-grown vertical one-dimensional structures have been integrated into high-density three-dimensional circuits. However, little attention has been paid to the unique structural properties of germanium nanowires obtained by epitaxial and heteroepitaxial growth on Ge(111) and Si(111) substrates, despite the fact that the integration of germanium on silicon is attractive for device applications. Here, we demonstrate the lateral growth of single crystal germanium islands tens of micrometres in diameter by seeding from germanium nanowires grown on a silicon substrate. Vertically aligned high-aspect-ratio nanowires can transfer the orientation and perfection of the substrate crystal to overlying layers a micrometre or more above the substrate surface. This technique can be repeated to build multiple active device layers, a key requirement for the fabrication of densely interconnected three-dimensional integrated circuits.

    View details for DOI 10.1038/nnano.2009.233

    View details for Web of Science ID 000270513900016

    View details for PubMedID 19809455

  • Gold Removal from Germanium Nanowires LANGMUIR Ratchford, J. B., Goldthorpe, I. A., Sun, Y., McIntyre, P. C., Pianetta, P. A., Chidsey, C. E. 2009; 25 (16): 9473-9479

    Abstract

    We report the selective removal of gold from the tips of germanium nanowires (GeNWs) grown by chemical vapor deposition on gold nanoparticles (AuNPs). Selective removal was accomplished by aqueous hydrochloric acid solutions containing either potassium triiodide or iodine. Measurement of the residual number of gold atoms on the GeNW samples using inductively coupled plasma-mass spectrometry shows that 99% of the gold was removed. Photoemission spectroscopy shows that the germanium surfaces of these samples were not further oxidized after treatment with these liquid etchants. Auger electron spectroscopy shows that AuNPs that did not yield GeNWs contain germanium and also that the addition of gaseous HCl to GeH(4) during GeNW growth increased the selectivity of germanium deposition to the AuNPs.

    View details for DOI 10.1021/la900725b

    View details for Web of Science ID 000268719900088

    View details for PubMedID 19419180

  • Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3: In situ surface characterization APPLIED PHYSICS LETTERS Swaminathan, S., Oshima, Y., Kelly, M. A., McIntyre, P. C. 2009; 95 (3)

    View details for DOI 10.1063/1.3177195

    View details for Web of Science ID 000268405300051

  • Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors MRS BULLETIN Wallace, R. M., McIntyre, P. C., Kim, J., Nishi, Y. 2009; 34 (7): 493-503
  • Nanowires for Energy Applications: Fundamental Growth Studies Marshall, A. F., Goldthorpe, I. A., Koto, M., McIntyre, P. C., Zhu, J., Peng, H., Barnett, D. M., Nix, W. D., Cui, Y. CAMBRIDGE UNIV PRESS. 2009: 144–145
  • Interface studies of ALD-grown metal oxide insulators on Ge and III-V semiconductors 16th Biennial Conference on Insulating Films on Semiconductors McIntyre, P. C., Oshima, Y., Kim, E., Saraswat, K. C. ELSEVIER SCIENCE BV. 2009: 1536–39
  • Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density APPLIED PHYSICS LETTERS Oshima, Y., Shandalov, M., Sun, Y., Pianetta, P., McIntyre, P. C. 2009; 94 (18)

    View details for DOI 10.1063/1.3116624

    View details for Web of Science ID 000265933700046

  • High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication JOURNAL OF CRYSTAL GROWTH Choi, D., Harris, J. S., Kim, E., McIntyre, P. C., Cagnon, J., Stemmer, S. 2009; 311 (7): 1962-1971
  • Growth of germanium crystals from electrodeposited gold in local crucibles APPLIED PHYSICS LETTERS Ratchford, J. B., Goldthorpe, I. A., McIntyre, P. C., Chidsey, C. E. 2009; 94 (4)

    View details for DOI 10.1063/1.3074363

    View details for Web of Science ID 000262971800124

  • Vertical Germanium Nanowire Arrays in Microfluidic Channels for Charged Molecule Detection JOURNAL OF THE ELECTROCHEMICAL SOCIETY Koto, M., Leu, P. W., McIntyre, P. C. 2009; 156 (2): K11-K16

    View details for DOI 10.1149/1.3033522

    View details for Web of Science ID 000261973600052

  • Group IV semiconductor nanowire arrays: Different flavors of epitaxy McIntyre, P., C., Adhikari, H., Goldthorpe, I., A., Marshall, A., F., Chidsey, C., E. D. 2009
  • Interface Studies of ALD-Grown Metal Oxide Insulators on Ge and III–V Semiconductors Microelectron. Engineering McIntyre, P., C., Oshima, Y., Kim, E., Saraswat, K., C. 2009; 86: 1536–39
  • High-Quality III–V Semiconductor MBE Growth on Ge/Si Virtual Substrates for Metal-Oxide-Semiconductor Device Fabrication J. Crystal Growth Choi, D., Harris, J., S., Kim, E., McIntyre, P., C., Cagnon, J., Stemmer, S. 2009; 311: 1962-71
  • Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by AtomicLayer Deposition and Chemically Treated n-In0.53Ga0.47As (001) Electrochem. Solid-State Lett. Shin, B., Cagnon, J., Long, R., D., Hurley, P., K., Stemmer, S., McIntyre, P., C. 2009; 12: G40-43
  • Atomically Abrupt and Unpinned Al2O3/ In0.53Ga0.47As Interfaces: Experiment and Simulation J. Appl. Phys. Kim, E., J., Chagarov, E., Cagnon, J., Yuan, Y., Kummel, A., C., Asbeck, P., M., McIntyre, P. 2009; 106: 124508-1-8
  • Enhancement Mode In0.53Ga0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth 21st International Conference on Indium Phosphide and Related Materials Singisetti, U., Wistey, M. A., Burek, G. J., Baraskar, A. K., Cagnon, J., Thibeault, B., Gossard, A. C., Stemmer, S., Rodwell, M. J., Kim, E., Shin, B., McIntyre, P. C. IEEE. 2009: 120–123
  • Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001) ELECTROCHEMICAL AND SOLID STATE LETTERS Shin, B., Cagnon, J., Long, R. D., Hurley, P. K., Stemmer, S., McIntyre, P. C. 2009; 12 (8): G40-G43

    View details for DOI 10.1149/1.3139603

    View details for Web of Science ID 000266975000013

  • Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties NANOTECHNOLOGY Leu, P. W., Adhikari, H., Koto, M., Kim, K., de Rouffignac, P., Marshall, A. F., Gordon, R. G., Chidsey, C. E., McIntyre, P. C. 2008; 19 (48)

    Abstract

    We demonstrate the p-type doping of Ge nanowires (NWs) and p-n junction arrays in a scalable vertically aligned structure with all processing performed below 400 °C. These structures are advantageous for the large scale production of parallel arrays of devices for nanoelectronics and sensing applications. Efficient methods for the oxide encapsulation, chemical mechanical polishing and cleaning of vertical Ge NWs embedded in silicon dioxide are reported. Approaches for avoiding the selective oxidation and dissolution of Ge NWs in aqueous solutions during chemical mechanical polishing and cleaning of oxide-encapsulated Ge NWs are emphasized. NWs were doped through the epitaxial deposition of a B-doped shell and transport measurements indicate doping concentrations on the order of 10(19) cm(-3).

    View details for DOI 10.1088/0957-4484/19/48/485705

    View details for Web of Science ID 000260859400022

    View details for PubMedID 21836312

  • Synthesis and Strain Relaxation of Ge-Core/Si-Shell Nanowire Arrays NANO LETTERS Goldthorpe, I. A., Marshall, A. F., McIntyre, P. C. 2008; 8 (11): 4081-4086

    Abstract

    Analogous to planar heteroepitaxy, misfit dislocation formation and stress-driven surface roughening can relax coherency strains in misfitting core-shell nanowires. The effects of coaxial dimensions on strain relaxation in aligned arrays of Ge-core/Si-shell nanowires are analyzed quantitatively by transmission electron microscopy and synchrotron X-ray diffraction. Relating these results to reported continuum elasticity models for coaxial nanowire heterostructures provides valuable insights into the observed interplay of roughening and dislocation-mediated strain relaxation.

    View details for DOI 10.1021/nl802408y

    View details for Web of Science ID 000260888600094

    View details for PubMedID 18954126

  • Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1-xO2/(100)Si interfaces JOURNAL OF APPLIED PHYSICS Chen, P. T., Triplett, B. B., Chambers, J. J., Colombo, L., McIntyre, P. C., Nishi, Y. 2008; 104 (1)

    View details for DOI 10.1063/1.2948922

    View details for Web of Science ID 000257766500104

  • Morphological instability of misfit-strained core-shell nanowires PHYSICAL REVIEW B Schmidt, V., McIntyre, P. C., Goesele, U. 2008; 77 (23)
  • Molecular-beam epitaxial growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication APPLIED PHYSICS LETTERS Choi, D., Kim, E., McIntyre, P. C., Harris, J. S. 2008; 92 (20)

    View details for DOI 10.1063/1.2929386

    View details for Web of Science ID 000256196600093

  • Silicon-germanium interdiffusion in high-germanium-content epitaxial heterostructures APPLIED PHYSICS LETTERS Ozguven, N., McIntyre, P. C. 2008; 92 (18)

    View details for DOI 10.1063/1.2917798

    View details for Web of Science ID 000256485700022

  • Ge-interface engineering with ozone oxidation for low interface-state density IEEE ELECTRON DEVICE LETTERS Kuzum, D., Krishnamohan, T., Pethe, A. J., Okyay, A. K., Oshima, Y., Sun, Y., McVittie, J. P., Pianetta, P. A., McIntyre, P. C., Saraswat, K. C. 2008; 29 (4): 328-330
  • HfO2 gate dielectric on (NH4)(2)S passivated (100) GaAs grown by atomic layer deposition JOURNAL OF APPLIED PHYSICS Chen, P. T., Sun, Y., Kim, E., McIntyre, P. C., Tsai, W., GARNER, M., Pianetta, P., Nishi, Y., Chui, C. O. 2008; 103 (3)

    View details for DOI 10.1063/1.2838471

    View details for Web of Science ID 000253238100054

  • Selective oxidation of SiGe alloys: A route to Ge-on-insulator structures with controlled biaxial strain ELECTROCHEMICAL AND SOLID STATE LETTERS Ozguven, N., McIntyre, P. C. 2008; 11 (6): H138-H142

    View details for DOI 10.1149/1.2896080

    View details for Web of Science ID 000255117500022

  • Chemical Bonding, Interfaces, and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge(100) J. Electrochem. Soc. Oshima, Y., Sun, Y., Kuzum, D., Sugawara, T., Saraswat, K., C., Pianetta, P., McIntyre, P. 2008; 155: G304-09
  • HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition J. Appl. Phys. Chen, P., T., Sun, Y., Kim, E., McIntyre, P., C., Tsai, W., Garner, M. 2008; 103: 34106
  • Analysis of Electrically Biased Paramagnetic Defect Centers in HfO2 and HfxSi1−xO2 /(100) Si Interfaces J. Appl. Phys. Chen, P., T., Triplett, B., B., Chambers, J., J., Colombo, L., McIntyre, P., C., Nishi, Y. 2008; 104: 14106
  • Pre-Atomic Layer Deposition Surface Cleaning and Chemical Passivation of (100) In0.2Ga0.8As and Deposition of Ultrathin Al2O3 Gate insulators Appl. Phys. Lett. Shin, B., Choi, D., Harris, J., S., McIntyre, P., C. 2008; 93: 052911-1-3
  • Ge Interface Passivation Techniques and Their Thermal Stability 3rd International SiGe, Ge and Related Compounds Symposium Kuzum, D., Krishnamohan, T., Pethe, A., Oshima, Y., Sun, Y., McVittie, J., Pianetta, P. A., McIntyre, P. C., Saraswat, K. C. ELECTROCHEMICAL SOCIETY INC. 2008: 1025–29

    View details for DOI 10.1149/1.2986865

    View details for Web of Science ID 000273336700114

  • Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation JOURNAL OF THE ELECTROCHEMICAL SOCIETY Delabie, A., Brunco, D. P., Conard, T., Favia, P., Bender, H., Franquet, A., Sioncke, S., Vandervorst, W., Van Elshocht, S., Heyns, M., Meuris, M., Kim, E., McIntyre, P. C., Saraswat, K. C., LeBeau, J. M., Cagnon, J., Stemmer, S., Tsai, W. 2008; 155 (12): H937-H944

    View details for DOI 10.1149/1.2979144

    View details for Web of Science ID 000260479700068

  • Effects of chemical stability of platinum/lead zirconate titanate and iridium oxide/lead zirconate titanate interfaces on ferroelectric thin film switching reliability APPLIED PHYSICS LETTERS Chen, Y., McIntyre, P. C. 2007; 91 (23)

    View details for DOI 10.1063/1.2822419

    View details for Web of Science ID 000251450600074

  • Metastability of Au-Ge liquid nanocatalysts: Ge vapor-liquid-solid nanowire growth far below the bulk eutectic temperature ACS NANO Adhikari, H., Marshall, A. F., Goldthorpe, I. A., Chidsey, C. E., McIntyre, P. C. 2007; 1 (5): 415-422

    Abstract

    The vapor-liquid-solid mechanism of nanowire (NW) growth requires the presence of a liquid at one end of the wire; however, Au-catalyzed Ge nanowire growth by chemical vapor deposition can occur at approximately 100 degrees C below the bulk Au-Ge eutectic. In this paper, we investigate deep sub-eutectic stability of liquid Au-Ge catalysts on Ge NWs quantitatively, both theoretically and experimentally. We construct a binary Au-Ge phase diagram that is valid at the nanoscale and show that equilibrium arguments, based on capillarity, are inconsistent with stabilization of Au-Ge liquid at deep sub-eutectic temperatures, similar to those used in Ge NW growth. Hot-stage electron microscopy and X-ray diffraction are used to test the predictions of nanoscale phase equilibria. In addition to Ge supersaturation of the Au-Ge liquid droplet, which has recently been invoked as an explanation for deep sub-eutectic Ge NW growth, we find evidence of a substantial kinetic barrier to Au solidification during cooling below the nanoscale Au-Ge eutectic temperature.

    View details for DOI 10.1021/nn7001486

    View details for Web of Science ID 000252022900011

    View details for PubMedID 19206662

  • Conditions for subeutectic growth of Ge nanowires by the vapor-liquid-solid mechanism JOURNAL OF APPLIED PHYSICS Adhikari, H., McIntyre, P. C., Marshall, A. F., Chidsey, C. E. 2007; 102 (9)

    View details for DOI 10.1063/1.2803893

    View details for Web of Science ID 000250983700084

  • Lead zirconate titanate ferroelectric thin film capacitors: Effects of surface treatments on ferroelectric properties APPLIED PHYSICS LETTERS Chen, Y., McIntyre, P. C. 2007; 91 (7)

    View details for DOI 10.1063/1.2769394

    View details for Web of Science ID 000248866600083

  • Vertically oriented germanium nanowires grown from gold colloids on silicon substrates and subsequent gold removal NANO LETTERS Woodruff, J. H., Ratchford, J. B., Goldthorpe, I. A., McIntyre, P. C., Chidsey, C. E. 2007; 7 (6): 1637-1642

    Abstract

    A linker-free method to deposit citrate-stabilized Au colloids onto hydrogen-terminated Si by acidifying the Au colloid solution with HF or HCl is presented. This method prevents oxide formation and provides a model system for studying orientation control of nanowires by epitaxy. Conditions are reported that result in vertically oriented Ge nanowires of uniform diameter and length on Si(111). We then present a method to remove Au catalysts from the nanowires with aqueous triiodide and HCl.

    View details for DOI 10.1021/nl070595x

    View details for Web of Science ID 000247186800037

    View details for PubMedID 17530912

  • Effect of Y doping and composition-dependent elastic strain on the electrical properties of (Ba,Sr)TiO3 thin films deposited at 520 degrees C (vol 87, art no 192906, 2005) APPLIED PHYSICS LETTERS Wang, R., McIntyre, P. C., Baniecki, J. D., Nomura, K., Shioga, T., Kurihara, K., Ishii, M. 2007; 90 (19)

    View details for DOI 10.1063/1.2735541

    View details for Web of Science ID 000246413400108

  • Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films JOURNAL OF APPLIED PHYSICS Zednika, R. J., McIntyre, P. C., Baniecki, J. D., Ishii, M., Shioga, T., Kurihara, K. 2007; 101 (6)

    View details for DOI 10.1063/1.2511367

    View details for Web of Science ID 000245317700177

  • Fluorine incorporation at HfO2/SiO2 interfaces in high-k metal-oxide-semiconductor gate stacks: Local electronic structure APPLIED PHYSICS LETTERS Ha, J., Seo, K., McIntyre, P. C., Sarawat, K. C., Cho, K. 2007; 90 (11)

    View details for DOI 10.1063/1.2712785

    View details for Web of Science ID 000244959200069

  • Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers APPLIED PHYSICS LETTERS Sugawara, T., Oshima, Y., Sreenivasan, R., McIntyre, P. C. 2007; 90 (11)

    View details for DOI 10.1063/1.2472197

    View details for Web of Science ID 000244959200070

  • High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications APPLIED PHYSICS LETTERS Sreenivasana, R., Sugawara, T., Saraswat, K. C., McIntyre, P. C. 2007; 90 (10)

    View details for DOI 10.1063/1.2643085

    View details for Web of Science ID 000244791700042

  • Oxidation-enhanced interdiffusion in Si1-xGex/Si1-yGey superlattices APPLIED PHYSICS LETTERS Ozguven, N., McIntyre, P. C. 2007; 90 (8)

    View details for DOI 10.1063/1.2434162

    View details for Web of Science ID 000244420600047

  • First principles study of the HfO2/SiO2 interface: Application to high-k gate structures JOURNAL OF APPLIED PHYSICS Ha, J., McIntyre, P. C., Cho, K. (. 2007; 101 (3)

    View details for DOI 10.1063/1.2433696

    View details for Web of Science ID 000244250100087

  • ALD resist formed by vapor-deposited self-assembled monolayers LANGMUIR Hong, J., Porter, D. W., Sreenivasan, R., McIntyre, P. C., Bent, S. F. 2007; 23 (3): 1160-1165

    Abstract

    A new process of applying molecular resists to block HfO2 and Pt atomic layer deposition has been investigated. Monolayer films are formed from octadecyltrichlorosilane (ODTS) or tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and water vapor on native silicon oxide surfaces and from 1-octadecene on hydrogen-passivated silicon surfaces through a low-pressure chemical vapor deposition process. X-ray photoelectron spectroscopy data indicates that surfaces blocked by these monolayer resists can prevent atomic layer deposition of both HfO2 and Pt successfully. Time-dependent studies show that the ODTS monolayers continue to improve in blocking ability for as long as 48 h of formation time, and infrared spectroscopy measurements confirm an evolution of packing order over these time scales.

    View details for DOI 10.1021/la0606401

    View details for Web of Science ID 000243684100033

    View details for PubMedID 17241027

  • Atomic layer deposition of Y2O3/ZrO2 nanolaminates - A route to ultrathin solid-state electrolyte membranes ELECTROCHEMICAL AND SOLID STATE LETTERS Ginestra, C. N., Sreenivasan, R., Karthikeyan, A., Ramanathan, S., McIntyre, P. C. 2007; 10 (10): B161-B165

    View details for DOI 10.1149/1.2759606

    View details for Web of Science ID 000248659800003

  • Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment McIntyre, P., C. 2007
  • Oxidation-Enhanced Interdiffusion in Si1-xGex Si1-yGey Superlattices Appl. Phys. Lett. Ozguven, N., McIntyre, P., C. 2007; 90: 082109-1-3
  • Oxygen Transfer from Metal Gate to High-k Gate Dielectric Stack: Interface Structure & Property Changes Ha, J., AlShareef, H., Chambers, J., Sun, Y., Pianetta, P., McIntyre, P. 2007
  • Metastability of Au−Ge Liquid Nanocatalysts: Ge Vapor–Liquid–Solid Nanowire Growth Far below the Bulk Eutectic Temperature ACS Nano Adhikari, H., Marshall, A., F., Goldthorpe, I., A., Chidsey, C., E. D., McIntyre, P., C. 2007; 1: 415-22
  • Atomic Layer Deposition of Y2O3/ZrO2 Nanolaminates: A Route to Ultrathin Solid-State Electrolyte Membranes Electrochem. Solid-State Lett. Ginestra, C., N., Sreenivasan, R., Karthikeyan, A., Ramanathan, S., McIntyre, P., C. 2007; 10: B161-65
  • Interface-engineered Ge (100) and (111), N- and P-FETs with high mobility IEEE International Electron Devices Meeting Kuzum, D., Pethe, A. J., Krishnamohan, T., Oshima, Y., Sun, Y., McVittie, J. P., Pianetta, P. A., McIntyre, P. C., Saraswat, K. C. IEEE. 2007: 723–726
  • Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices IEEE ELECTRON DEVICE LETTERS Wang, Z., Griffin, P. B., McVittie, J., Wong, S., McIntyre, P. C., Nishi, Y. 2007; 28 (1): 14-16
  • Chemical states and electrical properties of a high-k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer APPLIED PHYSICS LETTERS Seo, K., Lee, D., Pianetta, P., Kim, H., Saraswat, K. C., McIntyre, P. C. 2006; 89 (14)

    View details for DOI 10.1063/1.2358834

    View details for Web of Science ID 000241056900088

  • Improvement in high-k (HfO2/SiO2) reliability by incorporation of fluorine IEEE ELECTRON DEVICE LETTERS Seo, K., Sreenivasan, R., McIntyre, P. C., Saraswat, K. C. 2006; 27 (10): 821-823
  • Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition APPLIED PHYSICS LETTERS Sreenivasan, R., McIntyre, P. C., Kim, H., Saraswat, K. C. 2006; 89 (11)

    View details for DOI 10.1063/1.2348735

    View details for Web of Science ID 000240545400096

  • High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si OPTICS LETTERS Okyay, A. K., Nayfeh, A. M., Saraswat, K. C., Yonehara, T., Marshall, A., McIntyre, P. C. 2006; 31 (17): 2565-2567

    Abstract

    We demonstrate extremely efficient germanium-on-silicon metal-semiconductor-metal photodetectors with responsivities (R) as high as 0.85 A/W at 1.55 microm and 2V reverse bias. Ge was directly grown on Si by using a novel heteroepitaxial growth technique, which uses multisteps of growth and hydrogen annealing to reduce surface roughness and threading dislocations that form due to the 4.2% lattice mismatch. Photodiodes on such layers exhibit reverse dark currents of 100 mA/cm2 and external quantum efficiency up to 68%. This technology is promising to realize monolithically integrated optoelectronics.

    View details for Web of Science ID 000240008700017

    View details for PubMedID 16902620

  • Physical and electrical properties of plasma nitrided germanium oxynitride 7th AVS International Conference on Microelectronics and Interfaces (ICMI06) Sugawara, T., Sreenivasan, R., McIntyre, P. C. A V S AMER INST PHYSICS. 2006: 2449–56

    View details for DOI 10.1116/1.234886

    View details for Web of Science ID 000241476500046

  • Mechanism of germanium plasma nitridation 7th AVS International Conference on Microelectronics and Interfaces (ICMI06) Sugawara, T., Sreenivasan, R., McIntyre, P. C. A V S AMER INST PHYSICS. 2006: 2442–48

    View details for DOI 10.1116/1.2348887

    View details for Web of Science ID 000241476500045

  • Nature of germanium nanowire heteroepitaxy on silicon substrates JOURNAL OF APPLIED PHYSICS Jagannathan, H., Deal, M., Nishi, Y., Woodruff, J., Chidsey, C., McIntyre, P. C. 2006; 100 (2)

    View details for DOI 10.1063/1.2219007

    View details for Web of Science ID 000239423400124

  • Nanoscale germanium MOS dielectrics - Part II: High-kappa gate dielectrics IEEE TRANSACTIONS ON ELECTRON DEVICES Chui, C. O., Kim, H., Chi, D., McIntyre, P. C., Saraswat, K. C. 2006; 53 (7): 1509-1516
  • Germanium nanowire epitaxy: Shape and orientation control NANO LETTERS Adhikari, H., Marshall, A. F., Chidsey, C. E., McIntyre, P. C. 2006; 6 (2): 318-323

    Abstract

    Epitaxial growth of nanowires along the 111 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 degrees C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 111 growth, 110 growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al.

    View details for DOI 10.1021/nl052231f

    View details for Web of Science ID 000235532700034

    View details for PubMedID 16464057

  • High Performance Barium Strontium Titanate Thin Film Capacitors for Decoupling Applications Kamehara, N., Kurihara, K., Baniecki, J., D., Shioga, T., Nomura, K., McIntyre, P., C. 2006
  • Strain Enhanced High Efficiency Germanium Photodetectors in the Near Infrared for Integration with Si Okyay, A., K., Nayfeh, A., M., Saraswat, K., C, Ozguven, N., Marshall, A., McIntyre, P., C. 2006
  • Nanoscale Germanium MOS Dielectrics - Part II: High-kapp Gate Dielectrics IEEE Trans. Electron Dev. Chui, C., O., Kim, H., Chi, D., McIntyre, P., C., Saraswat, K., C. 2006; 53: 1509-16
  • Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation Processes Sugawara, T., Sreenivasan, R., McIntyre, P., C. 2006
  • Area Selective Atomic Layer Deposition by Soft Lithography Chen, R., Porter, D., W., Kim, H., McIntyre, P., C., Bent, S., F. 2006
  • Chemical States and Electrical Properties of a High- k Metal Oxide/Silicon Interface with Oxygen-Gettering Titanium-Metal-Overlayer Appl. Phys. Lett. Seo, K, I., Lee, D, I., Pianetta, P., Kim, H., Saraswat, K., C., McIntyre, P., C. 2006; 89
  • Structural Evolution and Point Defects in Metal Oxide-Based High-k Gate Dielectrics McIntyre, P., C., Kim, H., Saraswat, K., C. 2006
  • Atomic layer deposition of ultrathin metal-oxide films for nano-scale device applications JOURNAL OF THE KOREAN PHYSICAL SOCIETY Kim, H., McIntyre, P. C. 2006; 48 (1): 5-17
  • Interface Layers for High-k/Ge Gate Stacks: Are They Necessary? McIntyre, P., C., Chi, D., Chui, C., O., Kim, H., Seo, K., I., Saraswat, K., C. 2006
  • Photoemission studies of passivation of germanium nanowires APPLIED PHYSICS LETTERS Adhikari, H., McIntyre, P. C., Sun, S. Y., Pianetta, P., Chidsey, C. E. 2005; 87 (26)

    View details for DOI 10.1063/1.2158027

    View details for Web of Science ID 000234338700081

  • Z-contrast and electron energy loss spectroscopy study of passive layer formation at ferroelectric PbTiO3/Pt interfaces APPLIED PHYSICS LETTERS Fu, L. F., Welz, S. J., Browning, N. D., Kurasawa, M., McIntyre, P. C. 2005; 87 (26)

    View details for DOI 10.1063/1.2144279

    View details for Web of Science ID 000234338700067

  • Effect of Y doping and composition-dependent elastic strain on the electrical properties of (Ba,Sr)TiO3 thin films deposited at 520 degrees C APPLIED PHYSICS LETTERS Wang, R. V., McIntyre, P. C., Baniecki, J. D., Nomura, K., Shioga, T., Kurihara, K., Ishii, M. 2005; 87 (19)

    View details for DOI 10.1063/1.2125113

    View details for Web of Science ID 000233058800053

  • Comparative study on electrical and microstructural characteristics of ZrO2 and HfO2 grown by atomic layer deposition JOURNAL OF MATERIALS RESEARCH Kim, H., Saraswat, K. C., McIntyre, P. C. 2005; 20 (11): 3125-3132
  • Self-assembled monolayers as resists for atomic layer deposition 230th National Meeting of the American-Chemical-Society Chen, R., Kim, H., Porter, D. W., McIntyre, P. C., Bent, S. F. AMER CHEMICAL SOC. 2005: U1193–U1194
  • Passive Layer Formation at Pt/PbTiO3 Interfaces Identified Using STEM and EFTEM. Microscopy and microanalysis Welz, S. J., Fu, L. F., Erni, R., Kurasawa, M., McIntyre, P. C., Browning, N. D. 2005; 11: 1746-1747

    Abstract

    Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005.

    View details for DOI 10.1017/S1431927605502198

    View details for PubMedID 24017741

  • Chemical states and electronic structure of a HfO2/Ge(001) interface APPLIED PHYSICS LETTERS Seo, K. I., McIntyre, P. C., Sun, S., Lee, D. I., Pianetta, P., Saraswat, K. C. 2005; 87 (4)

    View details for DOI 10.1063/1.2006211

    View details for Web of Science ID 000230725900045

  • Ge based high performance nanoscale MOSFETs 14th Biennial Conference on Insulating Films on Semiconductors Saraswat, K. C., Chui, C. O., Krishnamohan, T., Nayfeh, A., McIntyre, P. ELSEVIER SCIENCE BV. 2005: 15–21
  • Surface passivation and electronic structure characterization of PbTiO3 thin films and Pt/PbTiO3 interfaces JOURNAL OF APPLIED PHYSICS Kurasawa, M., McIntyre, P. C. 2005; 97 (10)

    View details for DOI 10.1063/1.1897073

    View details for Web of Science ID 000230168100109

  • Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification APPLIED PHYSICS LETTERS Chen, R., Kim, H., McIntyre, P. C., Porter, D. W., Bent, S. F. 2005; 86 (19)

    View details for DOI 10.1063/1.1922076

    View details for Web of Science ID 000229397900026

  • Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon APPLIED PHYSICS LETTERS Sayan, S., Nguyen, N. V., Ehrstein, J., Emge, T., Garfunkel, E., Croft, M., Zhao, X. Y., Vanderbilt, D., Levin, I., Gusev, E. P., Kim, H., McIntyre, P. J. 2005; 86 (15)

    View details for DOI 10.1063/1.1864235

    View details for Web of Science ID 000228901600076

  • Formation of an interfacial Zr-silicate layer between ZrO2 and Si through in situ vacuum annealing APPLIED PHYSICS LETTERS Seo, K. I., McIntyre, P. C., Kim, H., Saraswat, K. C. 2005; 86 (8)

    View details for DOI 10.1063/1.1866644

    View details for Web of Science ID 000227609000054

  • Investigation of self-assembled monolayer resists for hafnium dioxide atomic layer deposition CHEMISTRY OF MATERIALS Chen, R., Kim, H., McIntyre, P. C., Bent, S. F. 2005; 17 (3): 536-544

    View details for DOI 10.1021/cm0486666

    View details for Web of Science ID 000226804000011

  • Misfit dislocation dissociation and Lomer formation in low mismatch SiGe/Si heterostructures JOURNAL OF MATERIALS RESEARCH Marshall, A. F., Aubertine, D. B., Nix, W. D., McIntyre, P. C. 2005; 20 (2): 447-455
  • O-18 tracer diffusion in Pb(Zr,Ti)O-3 thin films: A probe of local oxygen vacancy concentration JOURNAL OF APPLIED PHYSICS Wang, R. V., McIntyre, P. C. 2005; 97 (2)

    View details for DOI 10.1063/1.1814813

    View details for Web of Science ID 000226700500022

  • Influence of Ge concentration and compressive biaxial stress on interdiffusion in Si-rich SiGe alloy heterostructures JOURNAL OF APPLIED PHYSICS Aubertine, D. B., McIntyre, P. C. 2005; 97 (1)

    View details for DOI 10.1063/1.1828240

    View details for Web of Science ID 000226700300039

  • O18 Tracer Diffusion in Pb(Zr,Ti)O3 Thin Films: A Probe of Local Oxygen Vacancy Concentration J. Appl. Phys. Wang, R., V., McIntyre, P., C. 2005; 97: 023508-1
  • Effect of Y Doping and Composition-Dependent Elastic Strain on the Electrical Properties of (Ba,Sr)TiO3 Thin Films Deposited at 520°C Appl. Phys. Lett. Wang, R, V., McIntyre, P., C., Baniecki, J., D., Nomura, K., Shioga, T., Kurihara, K. 2005; 87: 1-3
  • Y-Doping Effects on the Dielectric Behavior of RF-Sputtered BST Thin Films Wang, R., V., McIntyre, P., C., Baniecki, J., D., Nomura, K., Takeshi, S., Kurihara, K. 2005
  • In situ low-angle x-ray scattering study of phase separation in initially mixed HfO2-SiO2 thin film interfaces APPLIED PHYSICS LETTERS Ha, J. H., CHI, D., McIntyre, P. C. 2004; 85 (24): 5884-5886

    View details for DOI 10.1063/1.1831554

    View details for Web of Science ID 000225620200023

  • Film and interface layer properties of ultraviolet-ozone oxidized hafnia and zirconia gate dielectrics on silicon substrates APPLIED PHYSICS LETTERS Chi, D., McIntyre, P. C. 2004; 85 (20): 4699-4701

    View details for DOI 10.1063/1.1814799

    View details for Web of Science ID 000225166400047

  • Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition APPLIED PHYSICS LETTERS Kim, H., McIntyre, P. C., Chui, C. O., Saraswat, K. C., Cho, M. H. 2004; 85 (14): 2902-2904

    View details for DOI 10.1063/1.1797564

    View details for Web of Science ID 000224547300076

  • Engineering chemically abrupt high-k metal oxide/silicon interfaces using an oxygen-gettering metal overlayer JOURNAL OF APPLIED PHYSICS Kim, H., McIntyre, P. C., Chui, C. O., Saraswat, K. C., Stemmer, S. 2004; 96 (6): 3467-3472

    View details for DOI 10.1063/1.1776636

    View details for Web of Science ID 000223720000069

  • Zirconia grown by ultraviolet ozone oxidation on germanium(100) substrates JOURNAL OF APPLIED PHYSICS Chi, D., Chui, C. O., Saraswat, K. C., Triplett, B. B., McIntyre, P. C. 2004; 96 (1): 813-819

    View details for DOI 10.1063/1.1745118

    View details for Web of Science ID 000222093300129

  • Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-kappa gate dielectrics APPLIED PHYSICS LETTERS Chen, R., Kim, H., McIntyre, P. C., Bent, S. F. 2004; 84 (20): 4017-4019

    View details for DOI 10.1063/1.1751211

    View details for Web of Science ID 000221269800021

  • Atomic layer deposition of high-kappa dielectric for germanium MOS applications-substrate surface preparation IEEE ELECTRON DEVICE LETTERS Chui, C. O., Kim, H., McIntyre, P. C., Saraswat, K. C. 2004; 25 (5): 274-276
  • Oxygen permeability of ferroelectric thin film top electrodes and its effect on detectable fatigue cycling-induced oxygen isotope motion JOURNAL OF MATERIALS RESEARCH Schloss, L. F., Kim, H., McIntyre, P. C. 2004; 19 (4): 1265-1272
  • Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies APPLIED PHYSICS LETTERS Kim, H., Marshall, A., McIntyre, P. C., Saraswat, K. C. 2004; 84 (12): 2064-2066

    View details for DOI 10.1063/1.1667621

    View details for Web of Science ID 000220268500018

  • Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition APPLIED PHYSICS LETTERS Cho, M. H., Chang, H. S., Moon, D. W., Kang, S. K., Min, B. K., Ko, D. H., Kim, H. S., McIntyre, P. C., Lee, J. H., Ku, J. H., Lee, N. I. 2004; 84 (7): 1171-1173

    View details for DOI 10.1063/1.1647703

    View details for Web of Science ID 000188880000048

  • Microstructural evolution of ZrO2-HfO2 nanolaminate structures grown by atomic layer deposition JOURNAL OF MATERIALS RESEARCH Kim, H. S., McIntyre, P. C., Saraswat, K. C. 2004; 19 (2): 643-650
  • Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation APPLIED PHYSICS LETTERS Ramanathan, S., McIntyre, P. C., Guha, S., Gusev, E. 2004; 84 (3): 389-391

    View details for DOI 10.1063/1.1636532

    View details for Web of Science ID 000188114300027

  • Experimental Study of Biaxial and Uniaxial Strain Effects on Carrier Mobility in Bulk and Ultrathin-Body SOI MOSFETs Uchida, K., Zednik, R., Lu, C., H., Jagannathan, H., McVittie, J., McIntyre, P., C. 2004
  • Self-Assembled Monolayer Resist for Atomic Layer Deposition of HfO2 and ZrO2 High-k Gate Dielectrics Appl. Phys. Lett. Chen, R., Kim, H., McIntyre, P., C., Bent, S., F. 2004; 84: 4017-19
  • Critical Current Angle-Dependent Measurements of Thin (15 nm) Chemically-Derived YBa2Cu3O7-d Films in Fields to 5.5 T Physica C Liebenberg, D., H., McIntyre, P., C., Cima, M., J., Francavilla, T., L. 2004; 235-240: 3069-70
  • Crystallization Kinetics and Microstructure-Dependent Leakage Current Behavior of Ultrathin HfO2 Dielectrics: In Situ Annealing Studies Appl. Phys. Lett. Kim, H., Marshall, A., F., McIntyre, P., C., Saraswat, K., C. 2004; 84: 2064-66
  • Controlling Area-Selective Atomic Layer Deposition of HfO2 Dielectric by Self-Assembled Monolayers Chen, R., Kim, H., McIntyre, P., C., Bent, S., F. 2004
  • Zirconia Grown by Ultraviolet Ozone Oxidation on Germanium (100) Substrates J. Appl. Phys. Chi, D., Chui, C., O., Saraswat, K., C., Triplett, B., B., McIntyre, P., C. 2004; 96: 813-19
  • Atomic Layer Deposition of High-k Dielectric for Germanium MOS Applications – Substrate IEEE Electron Dev. Lett. Chui, C., O., Kim, H., McIntyre, P., C., Saraswat, K., C. 2004; 25: 274-6
  • Origin and implications of the observed rhombohedral phase in nominally tetragonal Pb(Zr0.35Ti0.65)O-3 thin films JOURNAL OF APPLIED PHYSICS Kelman, M. B., McIntyre, P. C., Gruverman, A., Hendrix, B. C., Bilodeau, S. M., Roeder, J. F. 2003; 94 (8): 5210-5219

    View details for DOI 10.1063/1.1610773

    View details for Web of Science ID 000185664300075

  • Phase separation in hafnium silicates for alternative gate dielectrics - Influence on the unoccupied states JOURNAL OF THE ELECTROCHEMICAL SOCIETY Ramanathan, S., McIntyre, P. C., Luning, J., Lysaght, P. S., Yang, Y., Chen, Z. Q., Stemmer, S. 2003; 150 (10): F173-F177

    View details for DOI 10.1149/1.1604115

    View details for Web of Science ID 000185639800045

  • Local epitaxial growth of ZrO2 on Ge(100) substrates by atomic layer epitaxy APPLIED PHYSICS LETTERS Kim, H., Chui, C. O., Saraswat, K. C., McIntyre, P. C. 2003; 83 (13): 2647-2649

    View details for DOI 10.1063/1.1613031

    View details for Web of Science ID 000185521400049

  • Germanium nanowire field-effect transistors with SiO2 and high-kappa HfO2 gate dielectrics APPLIED PHYSICS LETTERS Wang, D. W., Wang, Q., Javey, A., Tu, R., Dai, H. J., Kim, H., McIntyre, P. C., Krishnamohan, T., Saraswat, K. C. 2003; 83 (12): 2432-2434

    View details for DOI 10.1063/1.1611644

    View details for Web of Science ID 000185333200044

  • Point defect distributions and their electrical effects on (Ba,Sr)TiO3/Pt thin films JOURNAL OF APPLIED PHYSICS Wang, R. V., McIntyre, P. C. 2003; 94 (3): 1926-1933

    View details for DOI 10.1063/1.1590063

    View details for Web of Science ID 000184400400094

  • Analysis of x-ray diffraction as a probe of interdiffusion in Si/SiGe heterostructures JOURNAL OF APPLIED PHYSICS Aubertine, D. B., Ozguven, N., McIntyre, P. C., Brennan, S. 2003; 94 (3): 1557-1564

    View details for DOI 10.1063/1.1589600

    View details for Web of Science ID 000184400400042

  • Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O-3 thin films JOURNAL OF APPLIED PHYSICS Kelman, M. B., McIntyre, P. C., Hendrix, B. C., Bilodeau, S. M., Roeder, J. F. 2003; 93 (11): 9231-9236

    View details for DOI 10.1063/1.1569431

    View details for Web of Science ID 000183144300062

  • Ultraviolet-ozone oxidation of metal films JOURNAL OF THE ELECTROCHEMICAL SOCIETY Ramanathan, S., CHI, D., McIntyre, P. C., Wetteland, C. J., Tesmer, J. R. 2003; 150 (5): F110-F115

    View details for DOI 10.1149/1.1566416

    View details for Web of Science ID 000182184200052

  • Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application APPLIED PHYSICS LETTERS Lee, S. Y., Kim, H., McIntyre, P. C., Saraswat, K. C., Byun, J. S. 2003; 82 (17): 2874-2876

    View details for DOI 10.1063/1.1569985

    View details for Web of Science ID 000182399700043

  • Polarization recovery of fatigued Pb(Zr,Ti)O-3 thin films: Switching current studies JOURNAL OF APPLIED PHYSICS Schloss, L. F., McIntyre, P. C. 2003; 93 (3): 1743-1747

    View details for DOI 10.1063/1.1536019

    View details for Web of Science ID 000180630200065

  • Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition APPLIED PHYSICS LETTERS Kim, H., McIntyre, P. C., Saraswat, K. C. 2003; 82 (1): 106-108

    View details for DOI 10.1063/1.1533117

    View details for Web of Science ID 000180134100036

  • Interdiffusion in Coherent Si0.70Ge0.30/Si0.95Ge0.05 Superlattices Aubertine, D., B., McIntyre, P., C. 2003
  • Polarization Recovery of Fatigued Pb(Zr,Ti)O3 Thin Films: Switching Current Studies J. Appl. Phys. Schloss, L., F., McIntyre, P., C. 2003; 93: 1743-47
  • Effect of Applied Mechanical Strain on the Ferroelectric and Dielectric Properties of Pb(Zr0.35Ti0.65)O3 Thin Films J. Appl. Phys. Kelman, M., B., McIntyre, P., C., Hendrix, B., C., Bilodeau, S., M., Roeder, J., F. 2003; 93: 9231-36
  • Structural Analysis of Coexisting Tetragonal and Rhombohedral Phases in Polycrystalline Pb(Zr0.35Ti 0.65)O3 Thin Films J. Mater. Res. Kelman, M., B., McIntyre, P., C., Hendrix, B., C., Bilodeau, S., M., Roeder, J., F., Brennan, S. 2003; 18: 173-9
  • Local Epitaxial Growth of ZrO2 on Ge (100) Substrates by Atomic Layer Epitaxy Appl. Phys. Lett. Kim, H., Chui, C., O., Saraswat, K., C., McIntyre, P., C. 2003; 83: 2647-49
  • Phase Separation in Hafnium Silicates for Alternative Gate Dielectrics: Influence on the Unoccupied States J. Electrochem. Soc. Ramanathan, S., McIntyre, P., C., Luning, J., Lysaght, P., S., Yang, Y., Chen, Z., Q 2003; 150: F173-77
  • A Germanium NMOSFET Process Integrating Metal Gate and Improved Hi-k Dielectrics Chui, C., O., Kim, H., McIntyre, P., C., Saraswat, K., C. 2003
  • A Novel Self-Aligned Gate-Last MOSFET Process Comparing High-k Candidates Chui, C., O., Kim, H., McVittie, J., P., Triplett, B., B, McIntyre, P., C., Saraswat, K., C. 2003
  • Germanium Nanowire Field-Effect Transistors with SiO2 and High-k HfO2 Gate Dielectrics Appl. Phys. Lett. Wang, D., W., Wang, Q., Javey, A., Tu, R., Dai, H., J, Kim, H., McIntyre, P. 2003; 83: 2432-34
  • Structural analysis of coexisting tetragonal and rhombohedral phases in polycrystalline Pb(Zr0.35Ti0.65)O-3 thin films JOURNAL OF MATERIALS RESEARCH Kelman, M. B., McIntyre, P. C., Hendrix, B. C., Bilodeau, S. M., Roeder, J. F. 2003; 18 (1): 173-179
  • High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates NATURE MATERIALS Javey, A., Kim, H., Brink, M., Wang, Q., Ural, A., Guo, J., McIntyre, P., McEuen, P., Lundstrom, M., DAI, H. J. 2002; 1 (4): 241-246

    Abstract

    The integration of materials having a high dielectric constant (high-kappa) into carbon-nanotube transistors promises to push the performance limit for molecular electronics. Here, high-kappa (approximately 25) zirconium oxide thin-films (approximately 8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for nanotube field-effect transistors. The p-type transistors exhibit subthreshold swings of S approximately 70 mV per decade, approaching the room-temperature theoretical limit for field-effect transistors. Key transistor performance parameters, transconductance and carrier mobility reach 6,000 S x m(-1) (12 microS per tube) and 3,000 cm2 x V(-1) x s(-1) respectively. N-type field-effect transistors obtained by annealing the devices in hydrogen exhibit S approximately 90 mV per decade. High voltage gains of up to 60 are obtained for complementary nanotube-based inverters. The atomic-layer deposition process affords gate insulators with high capacitance while being chemically benign to nanotubes, a key to the integration of advanced dielectrics into molecular electronics.

    View details for DOI 10.1038/nmat769

    View details for Web of Science ID 000181498800022

    View details for PubMedID 12618786

  • Spinodal decomposition in amorphous metal-silicate thin films: Phase diagram analysis and interface effects on kinetics JOURNAL OF APPLIED PHYSICS Kim, H., McIntyre, P. C. 2002; 92 (9): 5094-5102

    View details for DOI 10.1063/1.1510590

    View details for Web of Science ID 000178767200035

  • Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers JOURNAL OF APPLIED PHYSICS Aubertine, D. B., Mander, M. A., Ozguven, N., Marshall, A. F., McIntyre, P. C., Chu, J. O., Mooney, P. M. 2002; 92 (9): 5027-5035

    View details for DOI 10.1063/1.1508424

    View details for Web of Science ID 000178767200026

  • Oxygen tracer studies of ferroelectric fatigue in Pb(Zr,Ti)O-3 thin films APPLIED PHYSICS LETTERS Schloss, L. F., McIntyre, P. C., Hendrix, B. C., Bilodeau, S. M., Roeder, J. F., Gilbert, S. R. 2002; 81 (17): 3218-3220

    View details for DOI 10.1063/1.1516628

    View details for Web of Science ID 000178624900034

  • Effects of long-time DC bias on D2O- and D-2/N-2-annealed BST thin films JOURNAL OF ELECTROCERAMICS Wang, R. V., Becker, R. J., McIntyre, P. C. 2002; 9 (1): 25-30
  • Structural studies of ultrathin zirconia dielectrics PHILOSOPHICAL MAGAZINE LETTERS Ramanathan, S., McIntyre, P. C., Luning, J., Pianetta, P., Muller, D. A. 2002; 82 (9): 519-528
  • Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics APPLIED PHYSICS LETTERS Perkins, C. M., Triplett, B. B., McIntyre, P. C., Saraswat, K. C., Shero, E. 2002; 81 (8): 1417-1419

    View details for DOI 10.1063/1.1499513

    View details for Web of Science ID 000177351600017

  • Germanium MOS capacitors incorporating ultrathin high-kappa gate dielectric IEEE ELECTRON DEVICE LETTERS Chui, C. O., Ramanathan, S., Triplett, B. B., McIntyre, P. C., Saraswat, K. C. 2002; 23 (8): 473-475
  • Ultrathin zirconia/SiO2 dielectric stacks grown by ultraviolet-ozone oxidation APPLIED PHYSICS LETTERS Ramanathan, S., McIntyre, P. C. 2002; 80 (20): 3793-3795

    View details for DOI 10.1063/1.1481241

    View details for Web of Science ID 000175564100043

  • Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation JOURNAL OF APPLIED PHYSICS Ramanathan, S., Park, C. M., McIntyre, P. C. 2002; 91 (7): 4521-4527

    View details for DOI 10.1063/1.1459103

    View details for Web of Science ID 000174663900087

  • Thickness-dependent phase evolution of polycrystalline Pb(Zr0.35Ti0.65)O-3 thin films APPLIED PHYSICS LETTERS Kelman, M. B., Schloss, L. F., McIntyre, P. C., Hendrix, B. C., Bilodeau, S. M., Roeder, J. F. 2002; 80 (7): 1258-1260

    View details for DOI 10.1063/1.1449532

    View details for Web of Science ID 000173896400050

  • Room Temperature Grown Zirconia/SiO2 Dielectric Stacks with 1 nm EOT Ramanathan, S., McIntyre, P., C. 2002
  • Effects of Long-Time DC Bias on D2O- and D2/N2-Annealed BST Thin Films J. Electroceramics Wang, R., V., Becker, R., J., McIntyre, P., C. 2002; 9: 25-30
  • Thermal Stability of Polycrystalline Silicon Electrodes on ZrO2 Gate Dielectrics Appl. Phys. Lett. Perkins, C., M., Triplett, B., B., McIntyre, P., C., Saraswat, K., C., Shero, E. 2002; 81: 1417-19
  • High-k Dielectrics for advanced Carbon-Nanotube Transistors and Logic Gates Nature Mater. Javey, A., Kim, H., Brink, M., Wang, Q., Ural, A., Guo, J., McIntyre, P. 2002; 1: 241-46
  • Germanium MOS Capacitors Incorporating Ultrathin High-K Gate Dielectric IEEE Electron Dev. Lett. Chui, C., O., Ramanathan, S., Triplett, B., B., McIntyre, P., C., Saraswat, K., C. 2002; 23: 473-75
  • Oxygen Tracer Studies of Ferroelectric Fatigue in Pb(Zr,Ti)O3 Thin Films Appl. Phys. Lett. Schloss, L., F., McIntyre, P., C., Hendrix, B., C., Bilodeau, S., M., Roeder, J., F., Gilbert, S., R. 2002; 81: 3218-20
  • Ultrathin High-k Gate Dielectric Technology for Germanium MOS Applications Chui, C., O., Kim, H., Chi, D., Triplett, B., B., McIntyre, P., C., Saraswat, K., C. 2002
  • Thickness-Dependent Phase Evolution of Polycrystalline Pb(Zr0.35Ti0.65)O3 Thin Films Appl. Phys. Lett. Kelman, M., B., Schloss, L., F., McIntyre, P., C., Hendrix, B., C., Bilodeau, S., M., Roeder, J., F. 2002; 80: 1258-60
  • Assessment of Silicon MOS and Carbon Nanotube FET Performance Limits Using a General Theory of Ballistic Transistors Guo, J., Datta, S., Lundstrom, M., Brink, M., McEuen, P., Javey, A., McIntyre, P. 2002
  • Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics APPLIED PHYSICS LETTERS Ramanathan, S., Muller, D. A., Wilk, G. D., Park, C. M., McIntyre, P. C. 2001; 79 (20): 3311-3313
  • Growth and characterization of ultrathin zirconia dielectrics grown by ultraviolet ozone oxidation APPLIED PHYSICS LETTERS Ramanathan, S., Wilk, G. D., Muller, D. A., Park, C. M., McIntyre, P. C. 2001; 79 (16): 2621-2623
  • Microstructural study of epitaxial platinum and permalloy/platinum films grown on (0001) sapphire PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES Ramanathan, S., Clemens, B. M., McIntyre, P. C., Dahmen, U. 2001; 81 (8): 2073-2094
  • Point defect equilibrium in strontium titanate thin films JOURNAL OF APPLIED PHYSICS McIntyre, P. C. 2001; 89 (12): 8074-8084
  • Deuterium in (Ba,Sr)TiO3 thin films: Kinetics and mechanisms of incorporation and removal during annealing JOURNAL OF APPLIED PHYSICS McIntyre, P. C., Ahn, J. H., Becker, R. J., Wang, R. V., Gilbert, S. R., Mirkarimi, L. W., Schulberg, M. T. 2001; 89 (11): 6378-6388
  • Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition APPLIED PHYSICS LETTERS Perkins, C. M., Triplett, B. B., McIntyre, P. C., Saraswat, K. C., Haukka, S., Tuominen, M. 2001; 78 (16): 2357-2359
  • Dielectric relaxation and steady-state leakage in low-temperature sputtered (Ba, Sr)TiO3 thin films JOURNAL OF APPLIED PHYSICS Werner, M. C., Banerjee, I., Zhang, R., McIntyre, P. C., Tani, N., Tanimura, M. 2001; 89 (4): 2309-2313
  • Deuterium-induced degradation of (Ba, Sr)TiO3 films APPLIED PHYSICS LETTERS Ahn, J. H., McIntyre, P. C., Mirkarimi, L. W., Gilbert, S. R., Amano, J., Schulberg, M. 2000; 77 (9): 1378-1380
  • Equilibrium point defect and electronic carrier distributions near interfaces in acceptor-doped strontium titanate JOURNAL OF THE AMERICAN CERAMIC SOCIETY McIntyre, P. C. 2000; 83 (5): 1129-1136
  • Properties of Ferroelectric Films at Small Dimensions Ann. Rev. Mater. Sci. Shaw, T., M., Trolier-McKinstry, S., McIntyre, P., C. 2000; 30: 263-98
  • Deuterium-Induced Degradation of (Ba,Sr)TiO3 Thin Films Appl. Phys. Lett. Ahn, J., H., McIntyre, P., C., Mirkarimi, L., W., Gilbert, S., R., Amano, J., Schulberg, M. 2000; 77: 1378-80
  • Microstructure of (Ba,Sr)TiO3 Thin Films Deposited by Physical Vapor Deposition at 480°C and Its Influence on the Dielectric Properties Appl. Phys. Lett. Werner, M., C., Banerjee, I., McIntyre, P., C., Tani, N., Tanimura, M. 2000; 77: 1209-11
  • The properties of ferroelectric films at small dimensions ANNUAL REVIEW OF MATERIALS SCIENCE Shaw, T. M., Trolier-McKinstry, S., McIntyre, P. C. 2000; 30: 263-298
  • Interpretation of ion channeling results from epitaxial Pt thin films and Co/Pt multilayers 13th International Conference on Ion Beam Analysis (IBA-13) McIntyre, P. C., Maggiore, C. J., Nastasi, M. ELSEVIER SCIENCE BV. 1998: 214–219
  • Kinetics and mechanisms of TiN oxidation beneath Pt thin films JOURNAL OF APPLIED PHYSICS McIntyre, P. C., Summerfelt, S. R. 1997; 82 (9): 4577-4585
  • Oxidation kinetics of TiN layers: Exposed and beneath Pt thin films APPLIED PHYSICS LETTERS McIntyre, P. C., Summerfelt, S. R., Maggiore, C. J. 1997; 70 (6): 711-713
  • Epitaxy of Pt thin films on (001)MgO .2. Orientation evolution from nucleation through coalescence ACTA MATERIALIA McIntyre, P. C., Maggiore, C. J., Nastasi, M. 1997; 45 (2): 879-887
  • Epitaxy of Pt thin films on (001)MgO .1. Interface energetics and misfit accommodation ACTA MATERIALIA McIntyre, P. C., Maggiore, C. J., Nastasi, M. 1997; 45 (2): 869-878
  • Interdiffusion in Epitaxial Co/Pt Multilayers J. Appl. Phys. McIntyre, P., C., Wu, D., T., Nastasi, M. 1997; 81: 637-45
  • The effects of forming gas anneal on the electrical characteristics of Ir-electroded BST thin film capacitors 9th International Symposium on Integrated Ferroelectrics Hadad, D., Chen, T. S., Balu, V., Jiang, B., Kuah, S. H., McIntyre, P., Summerfelt, S., Anthony, J. M., Lee, J. C. TAYLOR & FRANCIS LTD. 1997: 461–69
  • Oxidation Kinetics of TiN Layers: Exposed and Beneath Pt Thin Films Appl. Phys. Lett. McIntyre, P., C., Summerfelt, S., R., Maggiore, C., J. 1997; 70: 711-13
  • Epitaxy of Pt Thin Films on (001) MgO. I. Interface Energetics and Misfit Accommodation Acta Mater. McIntyre, P., C., Maggiore, C., J., Nastasi, M. 1997; 45: 869-78
  • Epitaxy of Pt Thin Films on (001) MgO. II. Orientation Evolution from Nucleation through Coalescence Acta Mater. McIntyre, P., C., Maggiore, C., J., Nastasi, M. 1997; 45: 879-87
  • Kinetics and Mechanisms of TiN Oxidation Beneath Pt Thin Films J. Appl. Phys. McIntyre, P., C., Summerfelt, S., R. 1997; 82: 4577-85
  • Transmission Electron Microscopy Investigation of Biaxial Alignment Development in YSZ Films Fabricated Using Ion Beam Assisted Deposition J. Vac. Sci. Technol. A McIntyre, P., C., Ressler, K., G., Sonnenberg, N., Cima, M., J. 1996; 14: 210-15
  • Resistance degradation of CVD (Ba,Sr)TiO3 thin films for drams and integrated decoupling capacitors 10th IEEE International Symposium on Applications of Ferroelectrics (ISAF 96) Basceri, C., Wells, M. A., Streiffer, S. K., Kingon, A. I., Bilodeau, S., Carl, R., VANBUSKIRK, P. C., Summerfelt, S. R., McIntyre, P. IEEE. 1996: 51–54
  • Ir-electroded BST thin film capacitors for 1 giga-bit DRAM application 1996 International Electron Devices Meeting Chen, T. S., Hadad, D., Balu, V., Jiang, B., Kuah, S. H., McIntyre, P. C., Summerfelt, S. R., Anthony, J. M., Lee, J. C. IEEE. 1996: 679–682
  • Ion-beam-induced epitaxial crystallization of sol-gel zirconia thin films on yttria-stabilized zirconia Phil. Mag. Lett. Yu, N., McIntyre, P., C., Levine, T., E., Giannelis, E., P., Mayer, J., W., Nastasi, M. 1996; 73: 359-68
  • Ir-Electroded BST Thin Film Capacitors for 1 Giga-Bit DRAM Application Chen, T, S., Hadad, D., Balu, V., Jiang, B., Kuah, S, H., McIntyre, P., C. 1996
  • Increased Wear Resistance of Electrodeposited Chromium through Applications of Plasma Source Ion Implantation Techniques Surf. Coatings Technol. Walter, K., C., Scheuer, J., T., McIntyre, P., C., Kodali, P., Yu, N., Nastasi, M. 1996; 85: 1-6
  • Leakage currents in CVD (Ba,Sr)TiO3 thin films Symposium on Ferroelectric Thin Films, at the 1996 MRS Spring Meeting Basceri, C., Streiffer, S. K., Kingon, A. I., Bilodeau, S., Carl, R., VANBUSKIRK, P. C., Summerfelt, S. R., McIntyre, P., Waser, R. MATERIALS RESEARCH SOC. 1996: 285–290
  • Nanocrystalline BaTiO3 from Freeze-Dried Nitrate Solutions J. Mater. Res. McHale, J., M., McIntyre, P., C., Sickafus, K., E., Coppa, N., V. 1996; 11: 1199-209
  • ORIENTATION SELECTION IN THIN PLATINUM FILMS ON (001) MGO JOURNAL OF APPLIED PHYSICS McIntyre, P. C., Maggiore, C. J., Nastasi, M. 1995; 77 (12): 6201-6204
  • Orientation Selection and Microstructural Evolution of Epitaxial Pt Films on (001) MgO McIntyre, P., C., Maggiore, C., J., Nastasi, M. 1995
  • Crystallization kinetics of Fe-doped Al2O3 Symposium on Structure and Properties of Interfaces in Ceramics, at the 1994 Fall Meeting of the Materials-Research-Society Simpson, T. W., MITCHELL, I. V., Yu, N., Nastasi, M., McIntyre, P. C. MATERIALS RESEARCH SOC. 1995: 201–205
  • Crystallization Kinetics of Fe-Doped Al2O3 Simpson, T., W., Mitchell, I., V., Yu, N., Nastasi, M., McIntyre, P., C. 1995
  • Orientation Selection in Thin Platinum Films on (100) MgO J. Appl. Phys. McIntyre, P., C., Maggiore, C., J., Nastasi, M. 1995; 77: 6201-4
  • Doping Effects on the Kinetics of Solid-Phase Epitaxial-Growth of Amorphous Alumina Thin-Films on Sapphire Appl. Phys. Lett. Yu, N., Simpson, T., W., McIntyre, P., C., Nastasi, M., Mitchell, I., V. 1995; 67: 924-26
  • High-Quality Epitaxial Growth of Gamma-Alumina films on Alpha-Alumina Sapphire Induced by Ion-Beam Bombardment Phys. Rev. B Yu, N., McIntyre, P., C., Nastasi, M., Sickafus, K., E. 1995; 52: 17518-22
  • Defect Formation in Epitaxial Oxide Dielectric Layers Due to Substrate Surface Relief J. Electron. Mater. McIntyre, P., C., Chang, B., P., Sonnenberg, N., Cima, M., J. 1995; 24: 735-45
  • Effects of Substrate Surface Steps on the Microstructure of Epitaxial Ba2YCu3O7-x Thin Films on (001) LaAlO3 J. Crystal Growth McIntyre, P., C., Cima, M., J., Roshko, A. 1995; 149: 64-73
  • Current-Voltage Measurements of Thin YBa2Cu3O6.9 Films Compared with a Modified Ambegaokar-Halperin Theory Phys. Rev. B Liebenberg, D., H., Soulen, R., J., Francavilla, T., L., Fullermora, W., W., McIntyre, P., C., Cima, M., J. 1995; 51: 11838-47
  • Formation of Iron or Chromium Doped Epitaxial Sapphire Thin Films on Sapphire Substrates J. Appl. Phys. Yu, N., Wen, Q., Z., Clarke, D., R., McIntyre, P., C., Kung, H., Nastasi, M. 1995; 78: 5412-21
  • Epitaxial Dielectric Planarization for Multilayer HTSC Structures Chang, B., P., McIntyre, P., C., Sonnenberg, N., Cima, M., J. 1995
  • Epitaxial Nucleation and Growth of Chemically Derived Ba2YCu3O7-x Thin Films on (001) SrTiO3 J. Appl. Phys. McIntyre, P., C., Cima, M., J., Roshko, A. 1995; 77: 5263-72
  • Microstructure Development of Sol-Gel Derived Epitaxial LiNbO3 Thin Films J. Mater. Res. Nashimoto, K., Cima, M., J., McIntyre, P., C., Rhine, W., E. 1995; 10: 2564-72
  • The Influence of Processing Parameters on the Development of Biaxially Aligned Zirconia Thin Films Deposited by Ion Beam Assisted Deposition Sonnenberg, N., Ressler, K., G., McIntyre, P., C., Cima, M., J. 1995
  • Heteroepitaxial Growth of Chemically Derived Ex Situ Ba2YCu3O7-x Thin Films J. Mater. Res. McIntyre, P., C., Cima, M., J. 1994; 9: 2219-30
  • Angular Dependence of Transport Current Near Critical at Fields to 4 T in Metalorganic Thin Films J. Superconductivity Liebenberg, D., H., Cima, M., J., McIntyre, P., C., Francavilla, T., L. 1994; 7: 303-8
  • Microstructural Inhomogeneities in Chemically Derived Ba2YCu3O7-x Thin Films: Implications for Flux Pinning J. Mater. Res. McIntyre, P., C., Cima, M., J. 1994; 9: 2778-88
  • Epitaxial Planarization Using Ion Beam Assisted Deposition Chang, B., P., Sonnenberg, N., McIntyre, P., C., Cima, M., J., Sun, J., Yu-Jahnes, L., S. 1994
  • Preparation of Biaxially Aligned Cubic Zirconia Films on Pyrex Glass Substrates Using Ion-Beam Assisted Deposition J. Appl. Phys. Sonnenberg, N., Longo, A., S., Cima, M., J., Chang, B., P., Ressler, K., G., McIntyre, P., C. 1993; 74: 1027-34
  • Microstructural Evolution During Epitaxial Growth of Chemically Derived Ba2YCu3O7-x Thin Films McIntyre, P., C., Cima, M., J. 1993
  • Comparison of the Surface Morphology and Microstructure of In Situ and Ex Situ Derived YBa2Cu3O7-x Thin Films J. Electron Mater. Westerheim, A., C., McIntyre, P., C., Basu, S., N., Bhatt, D., Yu-Jahnes, L., S., Anderson, A., C. 1993; 22: 1113-20
  • Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba2YCu3O7-x on (001) LaAlO3 J. Appl. Phys. McIntyre, P., C., Cima, M., J., Smith, J., A., Hallock, R., B., Siegal, M., P., Phillips, J., M. 1992; 71: 1868-77
  • Angular Dependence of Critical Currents of High Temperature Superconducting Films in High Magnetic Fields Prepared by Metalorganic Deposition Cryogenics Liebenberg, D., H., McIntyre, P., C., Cima, M., J., Francavilla, T., L. 1992; 32: 1066-70
  • Mixed-State Behavior in Large Magnetic Fields of High-Temperature Superconducting Films Prepared by Metalorganic Deposition Appl. Phys. Lett. McIntyre, P., C., Cima, M., J., Liebenberg, D., H., Francavilla, T., L. 1991; 58: 2033-35
  • Metalorganic Deposition of High-Jc Ba2YCu3O7-x Thin Films on Single Crystal Substrates Cima, M., J., McIntyre, P., C., Smith Jr., J., A. 1991
  • Metalorganic Deposition of High-Jc Ba2YCu3O7-x Thin-Films from Trifluoracetate Precursors onto (100) SrTiO3 J. Appl. Phys. McIntyre, P., C., Cima, M., J., Ng, M., F. 1990; 68: 4183-87
  • Texture development in Ba2YCu3O7-x Films from Trifluoroacetate Precursors J. Mater. Res. McIntyre, P., C., Cima, M., J., Ng, M., F., Chiu, R., C., Rhine, W., E. 1990; 5: 2771-79