School of Engineering
Showing 921-940 of 7,080 Results
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Enze Chen
Lecturer
BioEnze (he/him, '18) is a Lecturer in Materials Science and Engineering (MSE) who teaches a variety of undergraduate MSE courses spanning structure, characterization, energy, computing, and communication. He obtained his PhD in MSE from UC Berkeley, where his research applied computational tools to study planar defects and materials informatics education. He is excited to return to The Farm and to help advance student success through instruction, advising, and research.
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Haoxuan Chen
Ph.D. Student in Computational and Mathematical Engineering, admitted Autumn 2022
BioPersonal website: https://haoxuanstevec00.github.io/
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Helen L. Chen
Research Scientist
BioHelen L. Chen is a research scientist in the Designing Education Lab in the Department of Mechanical Engineering at Stanford University. She holds an undergraduate degree in communication from UCLA and a PhD in communication with a minor in psychology from Stanford. Helen is a board member for the Association for Authentic, Experiential and Evidence-Based Learning (AAEEBL) and is a co-author of Documenting Learning with ePortfolios: A Guide for College Instructors and co-executive editor of the International Journal of ePortfolio. She works closely with the Association of American Colleges and Universities and consults with institutions on general education redesign, authentic assessment approaches, design thinking, and personal branding and ePortfolios. Helen's current research and scholarship focus on engineering and entrepreneurship education; the pedagogy of portfolios and reflective practice in higher education; and redesigning how learning is recorded and recognized in traditional transcripts and academic credentials.
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Hugo Chen
Ph.D. Student in Electrical Engineering, admitted Autumn 2022
Masters Student in Electrical Engineering, admitted Winter 2025BioHugo "Jiun-Yu" Chen is currently pursuing his Ph.D. degree in the Department of Electrical Engineering at Stanford University. He earned his M.S. in Photonics and Optoelectronics from National Taiwan University in 2019 and his B.S. in Materials Science and Engineering from National Dong Hwa University in 2017.
Prior to joining Stanford, Hugo worked as an R&D engineer at Taiwan Semiconductor Manufacturing Company (TSMC) in the High Power Program and Analog Power/RF Specialty Technology from 2019 to 2022. His research experience includes investigating GaN high electron mobility transistors (HEMTs) for high power converter applications, oxide-based thin-film transistors (TFTs) for CMOS inverter applications, and III-V quantum dots molecular beam epitaxy (MBE) material growth.
As the first author, Hugo has published two peer-reviewed journal articles, six conference papers, and one US/KR/TW/CN/DE patent. He is currently advised by Professors H.-S. Philip Wong and Kwabena Boahen, and his research focuses on developing ferroelectric field-effect transistors (FeFETs) for dendritic-centric learning.
In his leisure time, Hugo enjoys biking, playing badminton, and watching dramas. -
Jian Chen
Adjunct Professor, Electrical Engineering
BioRetired executive with 30 years of experience in NOR, 2D NAND and 3D NAND flash memories, in the areas of device physics, process integration, reliability, test & product engineering, memory systems architecture, eco-systems and new business development. With a passion for innovation and practical solutions and teamwork, built multiple teams from ground up including at international sites.
Inventor of >150 US patents and some significant ideals that have been used in over 10 generations of NAND memory chip and systems, such as binary cache for MLC (USP# 5,930,167 ), fast MLC NAND writing method GPW (USP# 6,522,580 and 6,643,188 ), read method to correct cell to cell coupling effect (USP#5,867,429), NAND memory WL air-gap (USP# 7,045,849 ), and highly reliable systems EPWR (USP#8,214,700, 8,386,861 aka EPWR).
Published the paper that coined the term GIDL, and the first paper that identified the physics of the GIDL current as due to band-to-band tunneling.
Google scholar h-index 57.
