Bio

Professor Srabanti Chowdhury, affiliated with the Electrical Engineering department and (by courtesy) Materials Science and Engineering at Stanford University, specializes in the wideband gap (WBG) and ultra-wide bandgap (UWBG) materials and device engineering. Her research focuses on energy-efficient system architecture for power and RF applications, particularly emphasizing thermal management. She earned her M.S. in June 2008 and Ph.D. in December 2010 in Electrical and Computer Engineering from the University of California, Santa Barbara. In recognition of her outstanding work on diamond integration with GaN and SiC, resulting in very low thermal boundary resistances for thermal management, Prof. Chowdhury received the 2023 Technical Excellence Award from the Semiconductor Research Society (SRC).
Her achievements also include the 2020 Alfred P. Sloan Fellowship in Physics and the 2016 Young Scientist Award at the International Symposium on Compound Semiconductors (ISCS). Earlier in her career, she was honored with the DARPA Young Faculty Award, NSF CAREER Award, and AFOSR Young Investigator Program (YIP), all in 2015.
Prof. Chowdhury's significant contributions to the field encompass 6 book chapters, 120 journal papers, 150 conference presentations, and 26 issued patents. Actively engaged in IEEE conference committees, including IRPS and VLSI Symposium, she serves on the executive committee of IEDM. Since 2021, she has been a senior fellow at the Precourt Institute for Energy at Stanford. Notably, she became an IEEE fellow in the batch of 2024 for her contributions to wide bandgap semiconductor devices and technology.

Academic Appointments

Honors & Awards

  • IEEE Fellow, (Class of 2024), IEEE (2023)
  • Advisor of the recipient of Lighting Talk Winner (Department of Energy, EFRC), Department of Energy/ EFRC (2023)
  • Advisor of the recipient of the Best Paper Award (TECHCON 2023), SRC/TECHCON (2023)
  • Technical Excellence Award, Semiconductor Research Corporation (2023)
  • Advisor of the recipient of the Best Paper Award (TECHCON 2023), TECHCON (SRC) (2022)
  • Sloan Research Fellow in Physics, Alfred P. Sloan Foundation (2020)
  • Gabilan Fellow, Stanford University (2019)
  • NAE Frontier of Engineering (symposium invitee and alumni), National Academy of Engineering (2019)
  • William George and Ida Mary Hoover Faculty Fellow, Stanford University (2019)
  • Advisor of student (Dong Ji) receiving Anil Kr. Jain award for best dissertation, Electrical and Computer Engineering, UC Davis (2018)
  • IEEE Senior Member, Institute of Electrical and Electronics Engineers (IEEE) (2017)
  • Advisor of student (Dong Ji) receiving Outstanding Student Abroad Award, Chinese Government (2016)
  • Young Scientist Award, International Symposium on Compound Semiconductors (ISCS) (2016)
  • Fulton Faculty Development Chair for outstanding research, Arizona State University (2015)
  • NSF CAREER Award, National Foundation of Science (2015)
  • Young Faculty Award (YFA), Defense Advanced Research Projects Agency (2015)
  • Young Investigator Program Award, Air Force Office of Research (2015)

Boards, Advisory Committees, Professional Organizations

  • Executive Committee Member, IEEE International Electron Devices Meeting (IEDM) (2018 - Present)
  • Program Co-Chair, Topical Workshop on Heterostructure Microelectronics (TWHM) (2018 - Present)
  • Program Committee Member, ISPlasma/IC-PLANTS (2018 - Present)
  • Subcommittee vice chair : High power electron devices, Compound Semiconductor Week 2019 (2018 - Present)
  • Subcommittee Chair for Power Devices / Compound Semiconductor and High Speed Devices Committee, IEEE International Electron Devices Meeting (IEDM) (2017 - 2018)
  • Subcommittee Member for Power Devices / Compound Semiconductor and High Speed Devices Committee, IEEE International Electron Devices Meeting (IEDM) (2015 - 2017)

Program Affiliations

  • Stanford SystemX Alliance

Contact

  • Academic
    srabanti@stanford.edu
    University - Faculty Department: Electrical Engineering Position: Assoc Professor
    • 420 Via Palou
    • Allen Building 334X
    • Stanford,  California  94305 

Additional Info

Current Research and Scholarly Interests

Wide bandap materials & devices for RF, Power and energy efficient electronics

2024-25 Courses

Stanford Advisees

All Publications

  • Development of 300-400 °C grown diamond for semiconductor devices thermal management MRS ADVANCES Malakoutian, M., Soman, R., Woo, K., Chowdhury, S. 2023

    View details for DOI 10.1557/s43580-023-00677-0

    View details for Web of Science ID 001103119100001

  • Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors APPLIED PHYSICS LETTERS Noshin, M., Wen, X., Soman, R., Xu, X., Chowdhury, S. 2023; 123 (6)

    View details for DOI 10.1063/5.0140777

    View details for Web of Science ID 001044510200007

  • Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS Mazumder, S. K., Voss, L. F., Dowling, K. M., Conway, A., Hall, D., Kaplar, R. J., Pickrell, G. W., Flicker, J., Binder, A. T., Chowdhury, S., Veliadis, V., Luo, F., Khalil, S., Aichinger, T., Bahl, S. R., Meneghini, M., Charles, A. B. 2023; 11 (4): 3957-3982

    View details for DOI 10.1109/JESTPE.2023.3277828

    View details for Web of Science ID 001042129300031

  • Demonstration of N-Polar All-AlGaN High Electron Mobility Transistors With 375 mA/mm Drive Current IEEE ELECTRON DEVICE LETTERS Noshin, M., Soman, R., Chowdhury, S. 2023; 44 (7): 1072-1075

    View details for DOI 10.1109/LED.2023.3279400

    View details for Web of Science ID 001021302800011

  • Scaling Study on High-Current Density Low-Dispersion GaN Vertical FinFETs IEEE ELECTRON DEVICE LETTERS Jeong, S., Lee, K., Chun, J., Soman, R., Chowdhury, S. 2023; 44 (5): 841-844

    View details for DOI 10.1109/LED.2023.3259002

    View details for Web of Science ID 000980442400035

  • High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion CRYSTALS Wen, X., Lee, K., Nakazato, Y., Chun, J., Chowdhury, S. 2023; 13 (4)

    View details for DOI 10.3390/cryst13040709

    View details for Web of Science ID 000977533800001

  • Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective IEEE TRANSACTIONS ON ELECTRON DEVICES Martinez, R., Munzer, D. J., Shankar, B., Murmann, B., Chowdhury, S. 2023

    View details for DOI 10.1109/TED.2023.3259383

    View details for Web of Science ID 000967103700001

  • Electric field mapping of wide-bandgap semiconductor devices at a submicrometer resolution Cao, Y., Pomeroy, J. W., Wang, J., Fay, P., Shankar, B., Chowdhury, S., Kuball, M., Fujioka, H., Morkoc, H., Schwarz, U. T. SPIE-INT SOC OPTICAL ENGINEERING. 2023

    View details for DOI 10.1117/12.2652369

    View details for Web of Science ID 001011094600013

  • Benchmarking Measurement-Based Large-Signal FET Models for GaN HEMT Devices Martinez, R., Iwamoto, M., Xu, J., Pahl, P., Chowdhury, S., IEEE IEEE. 2023: 69-72

    View details for DOI 10.1109/RFIC54547.2023.10186170

    View details for Web of Science ID 001042340100017

  • Thermal Scaffolding for Ultra-Dense 3D Integrated Circuits Rich, D., Kasperovich, A., Malakoutian, M., Radway, R. M., Hagiwara, S., Yoshikawa, T., Chowdhury, S., Mitra, S., IEEE IEEE. 2023

    View details for DOI 10.1109/DAC56929.2023.10247815

    View details for Web of Science ID 001073487300131

  • On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications FRONTIERS IN MATERIALS Ji, D., Chowdhury, S. 2022; 9

    View details for DOI 10.3389/fmats.2022.846418

    View details for Web of Science ID 000778456900001

  • A discussion on various experimental methods of impact ionization coefficient measurement in GaN AIP ADVANCES Ji, D., Zeng, K., Bian, Z., Shankar, B., Gunning, B. P., Binder, A., Dickerson, J. R., Aktas, O., Anderson, T. J., Kaplar, R. J., Chowdhury, S. 2022; 12 (3)

    View details for DOI 10.1063/5.0083111

    View details for Web of Science ID 000772898200002

  • A di/dt Triggered Self-Powered Unidirectional DC Circuit Breaker for both GaN and SiC platform for 400 V DC Applications Shankar, B., Martinez, R., Zuk, P., Chowdhury, S., IEEE IEEE. 2022

    View details for DOI 10.1109/ECCE50734.2022.9947482

    View details for Web of Science ID 001080548000122

  • Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling. ACS applied materials & interfaces Malakoutian, M., Field, D. E., Hines, N. J., Pasayat, S., Graham, S., Kuball, M., Chowdhury, S. 2021

    Abstract

    The implementation of 5G-and-beyond networks requires faster, high-performance, and power-efficient semiconductor devices, which are only possible with materials that can support higher frequencies. Gallium nitride (GaN) power amplifiers are essential for 5G-and-beyond technologies since they provide the desired combination of high frequency and high power. These applications along with terrestrial hub and backhaul communications at high power output can present severe heat removal challenges. The cooling of GaN devices with diamond as the heat spreader has gained significant momentum since device self-heating limits GaN's performance. However, one of the significant challenges in integrating polycrystalline diamond on GaN devices is maintaining the device performance while achieving a low diamond/GaN channel thermal boundary resistance. In this study, we achieved a record-low thermal boundary resistance of around 3.1 ± 0.7 m2 K/GW at the diamond/Si3N4/GaN interface, which is the closest to theoretical prediction to date. The diamond was integrated within 1 nm of the GaN channel layer without degrading the channel's electrical behavior. Furthermore, we successfully minimized the residual stress in the diamond layer, enabling more isotropic polycrystalline diamond growth on GaN with thicknesses >2 mum and a 1.9 mum lateral grain size. More isotropic grains can spread the heat in both vertical and lateral directions efficiently. Using transient thermoreflectance, the thermal conductivity of the grains was measured to be 638 ± 48 W/m K, which when combined with the record-low thermal boundary resistance makes it a leading-edge achievement.

    View details for DOI 10.1021/acsami.1c13833

    View details for PubMedID 34875169

  • Demonstration of Monolithic Polycrystalline Diamond-GaN Complementary FET Technology for High-Temperature Applications ACS APPLIED ELECTRONIC MATERIALS Ren, C., Malakoutian, M., Li, S., Ercan, B., Chowdhury, S. 2021; 3 (10): 4418-4423

    View details for DOI 10.1021/acsaelm.1c00571

    View details for Web of Science ID 000711759300015

  • A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices APPLIED PHYSICS LETTERS Choi, S., Graham, S., Chowdhury, S., Heller, E. R., Tadjer, M. J., Moreno, G., Narumanchi, S. 2021; 119 (17)

    View details for DOI 10.1063/5.0056271

    View details for Web of Science ID 000715601800001

  • Oxidation Behavior of InAlN during Rapid Thermal Annealing PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Thron, A. M., Gao, J., Ercan, B., Laurent, M. A., Chowdhury, S., van Benthem, K. 2021

    View details for DOI 10.1002/pssa.202100304

    View details for Web of Science ID 000686353400001

  • Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY Shoemaker, D., Malakoutian, M., Chatterjee, B., Song, Y., Kim, S., Foley, B. M., Graham, S., Nordquist, C. D., Chowdhury, S., Choi, S. 2021; 11 (8): 1177-1186

    View details for DOI 10.1109/TCPMT.2021.3091555

    View details for Web of Science ID 000685887800009

  • Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part II IEEE TRANSACTIONS ON ELECTRON DEVICES Fu, H., Fu, K., Chowdhury, S., Palacios, T., Zhao, Y. 2021; 68 (7): 3212-3222

    View details for DOI 10.1109/TED.2021.3083209

    View details for Web of Science ID 000675200600002

  • Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part I IEEE TRANSACTIONS ON ELECTRON DEVICES Fu, H., Fu, K., Chowdhury, S., Palacios, T., Zhao, Y. 2021; 68 (7): 3200-3211

    View details for DOI 10.1109/TED.2021.3083239

    View details for Web of Science ID 000675200600001

  • Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology CRYSTAL GROWTH & DESIGN Malakoutian, M., Ren, C., Woo, K., Li, H., Chowdhury, S. 2021; 21 (5): 2624-2632

    View details for DOI 10.1021/acs.cgd.0c01319

    View details for Web of Science ID 000648580100007

  • Polycrystalline diamond growth on beta-Ga2O3 for thermal management APPLIED PHYSICS EXPRESS Malakoutian, M., Song, Y., Yuan, C., Ren, C., Lundh, J., Lavelle, R. M., Brown, J. E., Snyder, D. W., Graham, S., Choi, S., Chowdhury, S. 2021; 14 (5)

    View details for DOI 10.35848/1882-0786/abf4f1

    View details for Web of Science ID 000641029300001

  • Electro-Thermal Investigation of GaN Vertical Trench MOSFETs IEEE ELECTRON DEVICE LETTERS Chatterjee, B., Ji, D., Agarwal, A., Chan, S. H., Chowdhury, S., Choi, S. 2021; 42 (5): 723-726

    View details for DOI 10.1109/LED.2021.3065362

    View details for Web of Science ID 000645061400021

  • Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination Zeng, K., Chowdhury, S., Gunning, B., Kaplar, R., Anderson, T., IEEE IEEE. 2021

    View details for DOI 10.1109/IRPS46558.2021.9405165

    View details for Web of Science ID 000672563100076

  • On impact ionization and avalanche in gallium nitride APPLIED PHYSICS LETTERS Ji, D., Chowdhury, S. 2020; 117 (25)

    View details for DOI 10.1063/5.0031504

    View details for Web of Science ID 000603064200007

  • Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation IEEE TRANSACTIONS ON ELECTRON DEVICES Zeng, K., Chowdhury, S. 2020; 67 (6): 2457–62

    View details for DOI 10.1109/TED.2020.2987040

    View details for Web of Science ID 000538163700037

  • 60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525K APPLIED PHYSICS LETTERS Ji, D., Ercan, B., Benson, G., Newaz, A. M., Chowdhury, S. 2020; 116 (21)

    View details for DOI 10.1063/1.5140005

    View details for Web of Science ID 000537750600001

  • Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m $\Omega\cdot$ cm(2)/1500 V GaN Diodes IEEE ELECTRON DEVICE LETTERS Ji, D., Li, S., Ercan, B., Ren, C., Chowdhury, S. 2020; 41 (2): 264–67

    View details for DOI 10.1109/LED.2019.2960349

    View details for Web of Science ID 000510750200015

  • Robust avalanche in GaN leading to record performance in avalanche photodiode Ji, D., Ercan, B., Benson, G., Newaz, A. M., Chowdhury, S., IEEE IEEE. 2020

    View details for Web of Science ID 000612717200130

  • Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode Ji, D., Ercan, B., Zhuang, J., Gu, L., Rivas-Davila, J., Chowdhury, S., IEEE IEEE. 2020

    View details for Web of Science ID 000615719100031

  • Experimental Determination of Velocity-Field Characteristic of Holes in GaN IEEE ELECTRON DEVICE LETTERS Ji, D., Ercan, B., Chowdhury, S. 2020; 41 (1): 23–25

    View details for DOI 10.1109/LED.2019.2953873

    View details for Web of Science ID 000507305400006

  • Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature Ren, C., Malakoutian, M., Li, S., Chowdhury, S., IEEE IEEE. 2020

    View details for Web of Science ID 000615719100010

  • A Study on the First-Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Chun, J., Li, S., Malakoutian, M., Ji, D., Chowdhury, S. 2019

    View details for DOI 10.1002/pssb.201900545

    View details for Web of Science ID 000497179400001

  • A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN CRYSTALS Malakoutian, M., Laurent, M. A., Chowdhury, S. 2019; 9 (10)

    View details for DOI 10.3390/cryst9100498

    View details for Web of Science ID 000498263500013

  • Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures APPLIED PHYSICS LETTERS Ji, D., Ercan, B., Chowdhury, S. 2019; 115 (7)

    View details for DOI 10.1063/1.5099245

    View details for Web of Science ID 000481469900011

  • A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor IEEE ELECTRON DEVICE LETTERS Rajabi, S., Mandal, S., Ercan, B., Li, H., Laurent, M. A., Keller, S., Chowdhury, S. 2019; 40 (6): 885–88

    View details for DOI 10.1109/LED.2019.2914026

    View details for Web of Science ID 000469848300011

  • Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) Ruzzarin, M., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Ji, D., Li, W., Chan, S. H., Agarwal, A., Gupta, C., Keller, S., Mishra, U. K., Chowdhury, S., IEEE IEEE. 2019

    View details for Web of Science ID 000474762500150

  • Experimental Determination of Hole Impact Ionization Coefficient and Saturation Velocity in GaN Ji, D., Ercan, B., Chowdhury, S., IEEE IEEE. 2019

    View details for Web of Science ID 000539485600361

  • Processing of GaN vertical devices: Static Induction Transistors Chowdhury, S., Chun, J., IEEE IEEE. 2019

    View details for Web of Science ID 000539485600342

  • Compound Semiconductors PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Xing, G., Mi, Z., Chowdhury, S. 2023; 220 (8)

    View details for DOI 10.1002/pssa.202300223

    View details for Web of Science ID 000975595000003

  • Impact of Diamond Passivation on f(T) and f(max) of mm-wave N-Polar GaN HEMTs IEEE TRANSACTIONS ON ELECTRON DEVICES Zhou, X., Malakoutian, M., Soman, R., Bian, Z., Martinez, R., Chowdhury, S. 2022

    View details for DOI 10.1109/TED.2022.3218612

    View details for Web of Science ID 000886832400001

  • Low Thermal Budget Growth of Near-Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices ADVANCED FUNCTIONAL MATERIALS Malakoutian, M., Zheng, X., Woo, K., Soman, R., Kasperovich, A., Pomeroy, J., Kuball, M., Chowdhury, S. 2022

    View details for DOI 10.1002/adfm.202208997

    View details for Web of Science ID 000854896500001

  • Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN. Nanotechnology Lee, K. J., Nakazato, Y., Chun, J., Wen, X., Meng, C., Soman, R., Noshin, M., Chowdhury, S. 2022

    Abstract

    Embeddingp-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent epitaxial layers is a key for designing various multi-junction structures with high precision and enabling more reliable bandgap engineering of III-nitride-based optoelectronics and electronics. Here, we report, for the first time, with experimental evidence how nanoporous GaN (NP GaN) can be introduced as a compensation layer for the Mg out-diffusion fromp-GaN. NP GaN onp-GaN provides an ex-situ-formed interface with oxygen and carbon impurities, compensating Mg out-diffusion fromp-GaN. To corroborate our findings, we used two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN as the indicator to study the impact of the Mg out-diffusion from underlying layers. Electron concentration evaluated from the capacitance-voltage measurement shows that 9 * 1012cm-2of carriers accumulate in the AlGaN/GaN 2DEG structure grown on NP GaN, which is the almost same number of carriers as that grown with nop-GaN. In contrast, 2DEG onp-GaN without NP GaN presents 9 * 109cm-2of the electron concentration, implying 2DEG structure is depleted by Mg out-diffusion. The results address the efficacy of NP GaN and its' role in successfully embeddingp-GaN in multi-junction structures for various state-of-the-art III-nitride-based devices.

    View details for DOI 10.1088/1361-6528/ac91d7

    View details for PubMedID 36103775

  • A study on MOCVD growth window for high quality N-polar GaN for vertical device applications SEMICONDUCTOR SCIENCE AND TECHNOLOGY Soman, R., Noshin, M., Chowdhury, S. 2022; 37 (9)

    View details for DOI 10.1088/1361-6641/ac7e67

    View details for Web of Science ID 000829564000001

  • Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer IEEE ELECTRON DEVICE LETTERS Zeng, K., Soman, R., Bian, Z., Jeong, S., Chowdhury, S. 2022; 43 (9): 1527-1530

    View details for DOI 10.1109/LED.2022.3196035

    View details for Web of Science ID 000845067200038

  • A Study on the Impact of Dislocation Density on Leakage Current in Vertical GaN-on-GaN p-n Diodes IEEE TRANSACTIONS ON ELECTRON DEVICES Li, S., Ercan, B., Ren, C., Ikeda, H., Chowdhury, S. 2022

    View details for DOI 10.1109/TED.2022.3186271

    View details for Web of Science ID 000826075100001

  • A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same SEMICONDUCTOR SCIENCE AND TECHNOLOGY Noshin, M., Soman, R., Xu, X., Chowdhury, S. 2022; 37 (7)

    View details for DOI 10.1088/1361-6641/ac71bf

    View details for Web of Science ID 000807760500001

  • Current Transient Spectroscopic Study of Vacancy Complexes in Diamond Schottky p-i-n Diode IEEE TRANSACTIONS ON ELECTRON DEVICES Chaudhuri, S. K., Malakoutian, M., Kleppinger, J. W., Dutta, M., Koeck, F. A., Nemanich, R. J., Chowdhury, S., Mandal, K. C. 2022

    View details for DOI 10.1109/TED.2022.3182931

    View details for Web of Science ID 000826445500001

  • 2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer IEEE ELECTRON DEVICE LETTERS Bian, Z., Zeng, K., Chowdhury, S. 2022; 43 (4): 596-599

    View details for DOI 10.1109/LED.2022.3149748

    View details for Web of Science ID 000792918100027

  • A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure APPLIED PHYSICS LETTERS Woo, K., Malakoutian, M., Reeves, B. A., Chowdhury, S. 2022; 120 (11)

    View details for DOI 10.1063/5.0083710

    View details for Web of Science ID 000827449100002

  • Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization Shankar, B., Bian, Z., Zeng, K., Meng, C., Martinez, R., Chowdhury, S., Gunning, B., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., IEEE IEEE. 2022

    View details for DOI 10.1109/IRPS48227.2022.9764525

    View details for Web of Science ID 000922926400099

  • Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode under UIS Stress for Edge-termination Optimization Shankar, B., Bian, Z., Zeng, K., Meng, C., Martinez, R., Chowdhury, S., Gunning, B., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., IEEE IEEE. 2022

    View details for Web of Science ID 000922926400201

  • Diamond Integration on GaN for Channel Temperature Reduction Malakoutian, M., Xu, R., Ren, C., Pasayat, S., Sayed, I., Pop, E., Chowdhury, S., IEEE IEEE. 2021: 70-74

    View details for DOI 10.1109/WiPDA49284.2021.9645133

    View details for Web of Science ID 000787172500014

  • Design of Ka-Band Doherty Power Amplifier Using 0.15 mu m GaN on SiC Process Based on Novel Complex Load Modulation Zhou, X., Chowdhury, S., Martinez, R., Shankar, B., IEEE IEEE. 2021: 259-262

    View details for DOI 10.1109/WiPDA49284.2021.9645125

    View details for Web of Science ID 000787172500049

  • On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress Shankar, B., Zeng, K., Gunning, B., Lee, K., Martinez, R., Meng, C., Zhou, X., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., Chowdhury, S., IEEE IEEE. 2021: 40-43

    View details for DOI 10.1109/WiPDA49284.2021.9645154

    View details for Web of Science ID 000787172500009

  • Best Practices to Quantify Linearity Performance of GaN HEMTs for Power Amplifier Applications Martinez, R., Munzer, D. J., Zhou, X., Shankar, B., Schmidt, E., Wildnauer, K., Wu, B., Murmann, B., Chowdhury, S., IEEE IEEE. 2021: 85-89

    View details for DOI 10.1109/WiPDA49284.2021.9645120

    View details for Web of Science ID 000787172500017

  • The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates JOURNAL OF ELECTRONIC PACKAGING Song, Y., Lundh, J., Wang, W., Leach, J. H., Eichfeld, D., Krishnan, A., Perez, C., Ji, D., Borman, T., Ferri, K., Maria, J., Chowdhury, S., Ryou, J., Foley, B. M., Choi, S. 2020; 142 (4)

    View details for DOI 10.1115/1.4047578

    View details for Web of Science ID 000591576500009

  • Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond PHYSICAL REVIEW B Peterson, R., Malakoutian, M., Xu, X., Chapin, C., Chowdhury, S., Senesky, D. G. 2020; 102 (7)

    View details for DOI 10.1103/PhysRevB.102.075303

    View details for Web of Science ID 000557726800002

https://orcid.org/0000-0001-8367-0461